JP2025009398A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2025009398A
JP2025009398A JP2023112386A JP2023112386A JP2025009398A JP 2025009398 A JP2025009398 A JP 2025009398A JP 2023112386 A JP2023112386 A JP 2023112386A JP 2023112386 A JP2023112386 A JP 2023112386A JP 2025009398 A JP2025009398 A JP 2025009398A
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JP
Japan
Prior art keywords
gate
shield
wiring
electrode
pad portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023112386A
Other languages
English (en)
Japanese (ja)
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JP2025009398A5 (https=
Inventor
伸 瀧澤
Shin Takizawa
裕介 野中
Yusuke Nonaka
健太 合田
Kenta Aida
勇志 萩野
Yuji Hagino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Priority to JP2023112386A priority Critical patent/JP2025009398A/ja
Priority to PCT/JP2024/023782 priority patent/WO2025013681A1/ja
Publication of JP2025009398A publication Critical patent/JP2025009398A/ja
Publication of JP2025009398A5 publication Critical patent/JP2025009398A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2023112386A 2023-07-07 2023-07-07 半導体装置 Pending JP2025009398A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2023112386A JP2025009398A (ja) 2023-07-07 2023-07-07 半導体装置
PCT/JP2024/023782 WO2025013681A1 (ja) 2023-07-07 2024-07-01 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2023112386A JP2025009398A (ja) 2023-07-07 2023-07-07 半導体装置

Publications (2)

Publication Number Publication Date
JP2025009398A true JP2025009398A (ja) 2025-01-20
JP2025009398A5 JP2025009398A5 (https=) 2025-09-10

Family

ID=94215269

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023112386A Pending JP2025009398A (ja) 2023-07-07 2023-07-07 半導体装置

Country Status (2)

Country Link
JP (1) JP2025009398A (https=)
WO (1) WO2025013681A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102362354B (zh) * 2009-03-25 2014-04-09 罗姆股份有限公司 半导体装置
JP2015009555A (ja) * 2013-07-02 2015-01-19 キヤノン株式会社 液体吐出装置および液体吐出方法
JP2016152357A (ja) * 2015-02-18 2016-08-22 株式会社東芝 半導体装置および半導体パッケージ
JP6462812B2 (ja) * 2017-09-27 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置
JP2019145646A (ja) * 2018-02-20 2019-08-29 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
WO2025013681A1 (ja) 2025-01-16

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