JP2023512183A - ガス電子増倍器基板の光電子増倍管 - Google Patents
ガス電子増倍器基板の光電子増倍管 Download PDFInfo
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- JP2023512183A JP2023512183A JP2022544249A JP2022544249A JP2023512183A JP 2023512183 A JP2023512183 A JP 2023512183A JP 2022544249 A JP2022544249 A JP 2022544249A JP 2022544249 A JP2022544249 A JP 2022544249A JP 2023512183 A JP2023512183 A JP 2023512183A
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- cesium
- potassium
- antimonide
- sodium
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- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 230000003287 optical effect Effects 0.000 claims abstract description 28
- 239000000463 material Substances 0.000 claims description 41
- 239000007789 gas Substances 0.000 claims description 36
- 229910052792 caesium Inorganic materials 0.000 claims description 30
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 30
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 22
- 239000011734 sodium Substances 0.000 claims description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 18
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 18
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims description 18
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 15
- 229910052787 antimony Inorganic materials 0.000 claims description 15
- 229910052700 potassium Inorganic materials 0.000 claims description 15
- 239000011591 potassium Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 12
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 10
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 9
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 6
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 claims description 6
- 239000000460 chlorine Substances 0.000 claims description 6
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 claims description 6
- 238000010791 quenching Methods 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052594 sapphire Inorganic materials 0.000 claims description 5
- 239000010980 sapphire Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 150000003112 potassium compounds Chemical class 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- OISJTQSPFPJHIZ-UHFFFAOYSA-N [Cs].[Na].[K] Chemical compound [Cs].[Na].[K] OISJTQSPFPJHIZ-UHFFFAOYSA-N 0.000 claims description 3
- SOWXYAAAVMKBPO-UHFFFAOYSA-N [Cs].[O].[Bi].[Ag] Chemical compound [Cs].[O].[Bi].[Ag] SOWXYAAAVMKBPO-UHFFFAOYSA-N 0.000 claims description 3
- QZRLETONGKUVFA-UHFFFAOYSA-N [K].[Cs] Chemical compound [K].[Cs] QZRLETONGKUVFA-UHFFFAOYSA-N 0.000 claims description 3
- BVWZFGDFKQCHAN-UHFFFAOYSA-N [Na].[Cs] Chemical compound [Na].[Cs] BVWZFGDFKQCHAN-UHFFFAOYSA-N 0.000 claims description 3
- TUOVKSNRKKDMIK-UHFFFAOYSA-N [O].[Ag].[Cs] Chemical compound [O].[Ag].[Cs] TUOVKSNRKKDMIK-UHFFFAOYSA-N 0.000 claims description 3
- FAWNVSNJFDIJRM-UHFFFAOYSA-N [Rb].[Cs] Chemical compound [Rb].[Cs] FAWNVSNJFDIJRM-UHFFFAOYSA-N 0.000 claims description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052794 bromium Inorganic materials 0.000 claims description 3
- LZDVDTNBLCLMGQ-UHFFFAOYSA-N cesium telluride Chemical compound [Cs][Te][Cs] LZDVDTNBLCLMGQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- AKUNKIJLSDQFLS-UHFFFAOYSA-M dicesium;hydroxide Chemical compound [OH-].[Cs+].[Cs+] AKUNKIJLSDQFLS-UHFFFAOYSA-M 0.000 claims description 3
- MMQSOEGXVXPNSH-UHFFFAOYSA-N disodioarsanylsodium Chemical compound [Na][As]([Na])[Na] MMQSOEGXVXPNSH-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 230000000737 periodic effect Effects 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000001103 potassium chloride Substances 0.000 claims description 3
- 235000011164 potassium chloride Nutrition 0.000 claims description 3
- 229910052701 rubidium Inorganic materials 0.000 claims description 3
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 3
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- FHGTUGKSLIJMAV-UHFFFAOYSA-N tricesium;antimony Chemical compound [Sb].[Cs+].[Cs+].[Cs+] FHGTUGKSLIJMAV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- XHIMHVMUWKSSAM-UHFFFAOYSA-N trisodium;antimony Chemical compound [Na+].[Na+].[Na+].[Sb] XHIMHVMUWKSSAM-UHFFFAOYSA-N 0.000 claims description 3
- FZFYOUJTOSBFPQ-UHFFFAOYSA-M dipotassium;hydroxide Chemical compound [OH-].[K+].[K+] FZFYOUJTOSBFPQ-UHFFFAOYSA-M 0.000 claims description 2
- QCIJURNQAPERJR-UHFFFAOYSA-N trilithium;antimony Chemical compound [Li+].[Li+].[Li+].[Sb] QCIJURNQAPERJR-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 13
- 239000011521 glass Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000224 chemical solution deposition Methods 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
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- 239000002356 single layer Substances 0.000 description 3
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- 230000005251 gamma ray Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
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- 230000035939 shock Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910012862 Li3Sb Inorganic materials 0.000 description 1
- 229910020666 Na3Sb Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/08—Cathode arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J47/00—Tubes for determining the presence, intensity, density or energy of radiation or particles
- H01J47/02—Ionisation chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/06—Electrode arrangements
- H01J43/18—Electrode arrangements using essentially more than one dynode
- H01J43/22—Dynodes consisting of electron-permeable material, e.g. foil, grid, tube, venetian blind
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J43/00—Secondary-emission tubes; Electron-multiplier tubes
- H01J43/04—Electron multipliers
- H01J43/28—Vessels, e.g. wall of the tube; Windows; Screens; Suppressing undesired discharges or currents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
Landscapes
- Measurement Of Radiation (AREA)
- Electron Tubes For Measurement (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
本出願は、2020年2月3日に出願された「Gas Electron Multiplier Board Photomultiplier」と題する米国特許仮出願第62/969,389号の利益を主張し、その全体が参照により組み込まれる。
Claims (20)
- デバイスであって、
近位端部及び遠位端部を含むハウジングと、
前記ハウジングの前記近位端部に配置された光学窓と、
前記ハウジングの前記遠位端部に配置された端壁プレートと、
前記端壁プレートを貫通するフィードスルーと、
前記光学窓と前記端壁プレートとの間に配置されたガス電子増倍器(GEM)基板と、を備える、デバイス。 - 前記光学窓の表面上に薄膜としてコーティングされた光カソードを更に備える、請求項1に記載のデバイス。
- 前記光カソードが、カリウムナトリウムアンチモン化物を含む、請求項2に記載のデバイス。
- 前記フィードスルーが、
前記端壁プレートを貫通する導電性ワイヤと、
前記導電性ワイヤと前記端壁プレートとの間の気密封止と、を含む、請求項1に記載のデバイス。 - 前記光学窓が、サファイアを含む、請求項1に記載のデバイス。
- 前記ハウジングが、チタン又はアルミニウムを含む、請求項1に記載のデバイス。
- ガス混合物を更に含み、前記ガス混合物が、比例ガスを含む、請求項1に記載のデバイス。
- 前記比例ガスが、周期表の18族又は窒素のうちの1つを含む、請求項7に記載のデバイス。
- 前記比例ガスが窒素である、請求項8に記載のデバイス。
- 前記ガス混合物が、クエンチガスを更に含む、請求項7に記載のデバイス。
- 前記クエンチガスが、CO2、CH4、又はCF4のうちの1つを含む、請求項10に記載のデバイス。
- 前記光カソードが、少なくとも1つの蒸着された材料層を含む、請求項2に記載のデバイス。
- 前記少なくとも1つの蒸着された材料層のうちの1つ以上の厚さが、200ナノメートル以下である、請求項12に記載のデバイス。
- 前記少なくとも1つの蒸着された材料層の各々が、アンチモン(Sb)、アンチモンとカリウムとの化合物(1:1)(KSb)、アンチモンとカリウムとの化合物(2:1)(KSb2)、アンチモンとカリウムとの化合物(5:4)(K5Sb4)、三酸化アンチモン(Sb2O3)、セシウム(Cs)、アンチモン化セシウム(Cs3Sb)、ヒ化ガリウム(GaAs)、セシウム含有ヒ化ガリウム(GaAs(Cs))、ビスマス化セシウム(Cs3Bi)、酸素含有ビスマス化セシウム(Cs3Bi(O))、銀含有ビスマス化セシウム(Cs3Bi(Ag))、ヨウ化セシウム(CsI)、酸化セシウム(Cs2O)、テルル化セシウム(Cs2Te)、ガリウムアルミニウムヒ化物(Ga0.25Al0.75As)、ガリウムヒ化リン化物(GaAs1-xPx)、セシウム含有ガリウムヒ化リン化物(GaAs1-xPx(Cs))、窒化ガリウム(GaN)、セシウム含有窒化ガリウム(GaN(Cs))、リン化ガリウム(GaP)、インジウムガリウムヒ化物(InGaAs)、セシウム含有インジウムガリウムヒ化物(InGaAs(Cs))、インジウムガリウムヒ化リン化物(InGaAsP)、セシウム含有インジウムガリウムヒ化リン化物(InGaAsP(Cs))、リン化インジウム(InP)、アンチモン化リチウム(Li3Sb)、酸素(O)、カリウム(K)、アンチモン化カリウム(K3Sb)、臭化カリウム(KBr)、カリウムセシウムアンチモン化物(K2CsSb)、塩化カリウム(KCl)、酸化カリウム(K2O)、カリウムナトリウムセシウムアンチモン化物((Cs)Na2KSb)、ナトリウム(Na)、アンチモン化ナトリウム(Na3Sb)、ヒ化ナトリウム(Na3As)、ナトリウムセシウムアンチモン化物(Na2CsSb)、酸化ナトリウム(Na2O)、ナトリウムカリウムアンチモン化物(Na2KSb)、ルビジウムセシウムアンチモン化物(Rb2CsSb)、銀(Ag)、銀ビスマス酸素セシウム(Ag-Bi-O-Cs)、炭化ケイ素(SiC)、及び銀酸素セシウム(Ag-O-Cs)からなる群から選択される1つ以上の材料を最低90重量%含む、請求項12に記載のデバイス。
- 前記少なくとも1つの蒸着された材料層の各々が、アルミニウム(Al)、アンチモン(Sb)、ヒ素(As)、ビスマス(Bi)、臭素(Br)、セシウム(Cs)、塩素(Cl)、ガリウム(Ga)、インジウム(In)、リチウム(Li)、酸素(O)、リン(P)、カリウム(K)、ルビジウム(Rb)、銀(Ag)、ナトリウム(Na)、及びテルル(Te)からなる群から選択される1つ以上の材料を最低90重量%含む、請求項12に記載のデバイス。
- 前記少なくとも1つの蒸着された材料層の各々が、ケイ素(Si)、窒化ホウ素(BN)、二酸化チタン(TiO2)、炭化ケイ素(SiC)、及び二酸化ケイ素(SiO2)からなる群から選択される1つ以上の材料を最低90重量%含む、請求項12に記載のデバイス。
- 電位差が、前記光カソードと前記GEM基板との間に印加される、請求項2に記載のデバイス。
- 読み出しアノードを更に備える、請求項1に記載のデバイス。
- 導電性シリンダ又はリングを含む集束素子を更に備える、請求項1に記載のデバイス。
- 前記ハウジングが、円筒状である、請求項1に記載のデバイス。
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US62/969,389 | 2020-02-03 | ||
US17/158,668 US11201041B2 (en) | 2020-02-03 | 2021-01-26 | Gas electron multiplier board photomultiplier |
US17/158,668 | 2021-01-26 | ||
PCT/US2021/016311 WO2021158596A1 (en) | 2020-02-03 | 2021-02-03 | Gas electron multiplier board photomultiplier |
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US20210242002A1 (en) | 2021-08-05 |
CN115053324A (zh) | 2022-09-13 |
EP4100988A4 (en) | 2024-03-13 |
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