JP2023177215A - Light-emitting device, display unit, photoelectric conversion device, electronic equipment, and method of manufacturing light-emitting device - Google Patents

Abstract

To provide a technique advantageous in making density high.SOLUTION: A light-emitting device includes a first substrate which comprises a first principal surface and a second principal surface where a light-emitting element is arranged, and a second substrate which is joined to the first principal surface, wherein a transistor which controls the light-emitting element is arranged on the first substrate, and also includes a gate electrode which extends in a direction crossing the first principle surface, a first diffusion region which is arranged on the first principal surface, and functions as one of a source region and a drain region, and a second diffusion region which is arranged on the second principal surface and functions as the other of the source electrode and drain region, and the first diffusion region and the second diffusion region are arranged side by side in the direction crossing the first principal surface.SELECTED DRAWING: Figure 1

Description

The present invention relates to a light emitting device, a display device, a photoelectric conversion device, an electronic device, and a method for manufacturing a light emitting device.

Patent Document 1 discloses a semiconductor device in which a first substrate including a transistor that drives a light-receiving element and a second substrate including a transistor that drives a light-emitting element are stacked. In the semiconductor device shown in Patent Document 1, a first substrate includes a light emitting element, a light receiving element, and a through electrode that penetrates the first substrate and transmits a drive signal for the light emitting element from the second substrate. will be arranged.

Japanese Patent Application Publication No. 2018-174246

As shown in Patent Document 1, when a light emitting element is arranged on one main surface of one substrate and a transistor is arranged on the other main surface, the degree of freedom in the layout of the light emitting elements and transistors increases. However, since a transistor cannot be placed in a portion where a through electrode is placed, this may impede an increase in the density of elements.

An object of the present invention is to provide a technique advantageous for increasing density.

In view of the above problems, a light emitting device according to an embodiment of the present invention includes a first substrate including a first main surface and a second main surface on which a light emitting element is disposed, and a second substrate bonded to the first main surface. A light emitting device comprising: a substrate; a transistor for controlling the light emitting element is disposed on the first substrate; the transistor has a gate electrode extending in a direction intersecting the first main surface; a first diffusion region that functions as one of the source region and the drain region arranged on the first main surface; a second diffusion region that functions as the other of the source region and the drain region arranged on the second main surface; The first diffusion region and the second diffusion region are arranged side by side in the intersecting direction.

According to the present invention, it is possible to provide a technique advantageous for increasing density.

1 is a cross-sectional view and a plan view showing a configuration example of a light-emitting device according to an embodiment. FIGS. 2A and 2B are a cross-sectional view and a plan view showing a modification of the light emitting device shown in FIG. 1. FIGS. 3 is a sectional view showing a modification of the light emitting device of FIG. 2. FIG. 4 is a sectional view showing a modification of the light emitting device of FIG. 3. FIG. FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. 1; 3 is a sectional view showing a modification of the light emitting device of FIG. 2. FIG. 7 is a plan view and a circuit diagram of the light emitting device of FIG. 6. FIG. 3 is a sectional view showing a modification of the light emitting device of FIG. 2. FIG. 9 is a plan view and a circuit diagram of the light emitting device of FIG. 8. FIG. FIG. 2 is a cross-sectional view showing a modification of the light emitting device of FIG. 1; 2 is a diagram illustrating an example of the configuration of a pixel circuit of the light emitting device of FIG. 1. FIG. 12 is a cross-sectional view of a light emitting device including the pixel circuit of FIG. 11. FIG. 1 is a diagram showing an example of a display device using the light emitting device of this embodiment. FIG. 1 is a diagram showing an example of a photoelectric conversion device using the light emitting device of this embodiment. FIG. 1 is a diagram showing an example of an electronic device using the light emitting device of the present embodiment. FIG. 1 is a diagram showing an example of a display device using the light emitting device of this embodiment. FIG. 1 is a diagram showing an example of a lighting device using the light emitting device of this embodiment. FIG. 2 is a diagram showing an example of a moving body using the light emitting device of the present embodiment. FIG. 1 is a diagram showing an example of a wearable device using the light emitting device of the present embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the claimed invention. Although a plurality of features are described in the embodiments, not all of these features are essential to the invention, and the plurality of features may be arbitrarily combined. Furthermore, in the accompanying drawings, the same or similar components are designated by the same reference numerals, and redundant description will be omitted.

A light emitting device according to an embodiment of the present disclosure will be described with reference to FIGS. 1(a) and 1(b) to FIG. 12. FIG. 1(a) is a cross-sectional view showing a configuration example of a light emitting device 10 in this embodiment. The light emitting device 10 includes a substrate 105 having a main surface 101 and a main surface 102 on which a light emitting element 130 is arranged, and a substrate 151 bonded to the main surface 101 of the substrate 105 via insulating layers 143 and 152. The substrate 105 and the substrate 151 may be semiconductor substrates using silicon or the like, for example. Further, the substrate 151 may be an insulating substrate made of glass, resin, or the like. Substrate 151 may also be called a support substrate.

The main surface 101 of the substrate 105 is arranged to face the substrate 151 and is bonded to the substrate 151. A wiring structure 120 and a light emitting element 130 are formed on the main surface 102 of the substrate on the side opposite to the main surface 101.

A transistor 110 that controls the light emitting element 130 is arranged on the substrate 105 . The transistor 110 includes a gate electrode 111 extending in a direction intersecting the main surface 101 of the substrate 105, a diffusion region 112 functioning as one of a source region and a drain region disposed on the main surface 101 of the substrate 105, and A diffusion region 113 functioning as the other of the source region and the drain region disposed on the main surface 102 is included. The diffusion region 112 and the diffusion region 113 are arranged side by side in a direction intersecting the principal surface 101 of the substrate 105, as shown in FIG. 1(a). Further, the transistor 110 includes a gate insulating film 114 and a well region 115. Here, the expression "diffusion region 112 disposed on the main surface 101 of the substrate 105" is not limited to the case where the diffusion region 112 is exposed as the main surface 101. For example, an insulating layer such as silicon oxide may be disposed on the diffusion region 112. The same applies to the diffusion region 113 and the like. Diffusion regions 112 and 113 may be semiconductor regions of a different conductivity type from well region 115. Further, the diffusion regions 112 and 113 may have an impurity concentration ten times higher than that of the well region 115. When a predetermined voltage is applied to the gate electrode 111 of the transistor 110, a channel region is formed near the interface between the well region 115 and the gate insulating film 114, and a current flows between the diffusion region 112 and the diffusion region 113. In other words, the transistor 110 is a switch element that allows current to flow between an electrode in contact with the diffusion region 112 disposed on the main surface 101 of the substrate 105 and an electrode in contact with the diffusion region 113 disposed on the main surface 102. be.

The wiring structure 120 includes a wiring pattern 121, a plug 122, and an insulating layer 123. Although one layer of wiring pattern 121 is shown in FIG. 1A, the wiring pattern may be arranged over multiple layers. The wiring pattern 121 and the plug 122 may be formed using metals such as copper, tungsten, titanium, aluminum, or alloys thereof, for example. Further, a barrier layer using tantalum, tantalum nitride, or the like may be disposed between the wiring pattern 121 and the plug 122 and the insulating layer 123. The insulating layer 123 can be formed using, for example, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or the like.

The light emitting device 130 includes a lower electrode, a light emitting layer 131, and an upper electrode 132. In the configuration shown in FIG. 1A, an example is shown in which the lower electrode of the light emitting element 130 is also used as the wiring pattern 121, but the present invention is not limited to this. A lower electrode of the light emitting element 130 may be arranged separately from the wiring pattern 121. In the configuration shown in FIG. 1A, the diffusion region 113 and the lower electrode of the light emitting element 130 are electrically connected via the plug 122. In the configuration shown in FIG. 1A, the lower electrode is an individual electrode arranged for each light emitting element 130. Further, the light emitting layer 131 and the upper electrode 132 are shared by the plurality of light emitting elements 130. Therefore, the light emitting area of each light emitting element 130 can be determined depending on the size and shape of the lower electrode, and the position of the light emitting element 130 and the interval at which it is arranged (also called pixel interval or pixel pitch) can be determined depending on the arrangement of the lower electrode. can be determined.

For example, a self-luminous material such as an organic electroluminescent (EL) material can be used for the light emitting layer 131. That is, the light emitting element 130 may be an organic EL element. Further, the light emitting element 130 may be an element using various light emitting technologies such as an inorganic EL element, a light emitting diode element, a laser element, etc., and a light emitting layer 131 corresponding to each element is arranged. The upper electrode 132 may be a transparent electrode that transmits light generated in the light emitting layer 131. For the upper electrode 132, for example, a transparent metal oxide such as indium tin oxide, a thin film of silver, a silver alloy, or the like can be used.

A wiring structure 140 may be connected to the gate electrode 111 and the diffusion region 112 of the transistor 110. The wiring structure 140 includes a wiring pattern 141, a plug 142, and an insulating layer 143. Although one layer of wiring pattern 141 is shown in FIG. 1A, the wiring pattern may be arranged over multiple layers. The wiring pattern 141 and the plug 142 may be formed using metals such as copper, tungsten, titanium, aluminum, or alloys thereof. Further, a barrier layer using tantalum, tantalum nitride, or the like may be disposed between the wiring pattern 141 and the plug 142 and the insulating layer 143. The insulating layer 143 can be formed using, for example, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or the like.

An insulating layer 152 is formed on a main surface 153 of the substrate 151 that faces the substrate 105 . The insulating layer 152 can be formed using, for example, silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, or the like. The insulating layer 143 and the insulating layer 152 are bonded via a bonding surface 154. The insulating layer 143 and the insulating layer 152 can be bonded using, for example, a surface activated bonding method. Further, a bonding layer using an adhesive or the like may be provided between the insulating layer 143 and the insulating layer 152.

FIG. 1(b) illustrates a plan view taken along the line A-A' shown in FIG. 1(a). On the other hand, the cross-sectional view shown in FIG. 1(a) is a cross-sectional view taken along line BB' in FIG. 1(b). As shown in FIG. 1B, a gate insulating film 114, a diffusion region 112, and a well region 115 are arranged to surround the gate electrode 111.

In such a light emitting device 10, the transistor 110 can cause current to flow between the diffusion region 112 provided on the main surface 101 side of the substrate 105 and the diffusion region 113 provided on the main surface 102 side. Therefore, there is no need to provide a through electrode. In other words, the transistor 110 can be provided instead of the through electrode. As a result, the light emitting elements 130 can be arranged at intervals that take into account the area required by the transistors disposed on the main surface 102 of the substrate 105 including the transistors 110, without considering the area required by the through electrodes. . As a result, it is possible to increase the density of the light-emitting elements 130 and the transistors including the transistor 110. Here, in the configuration shown in FIG. 1A, the intervals at which the light emitting elements 130 are arranged are the intervals between the lower electrodes (individual electrodes) provided corresponding to each light emitting element 130, as described above. can be defined by

Furthermore, a plurality of transistors 110 may be arranged in the light emitting device 10. At this time, the respective diffusion regions 112 of the plurality of transistors 110 are electrically isolated from each other, and similarly, the respective diffusion regions 113 of the plurality of transistors 110 are electrically isolated from each other. This makes it possible to independently drive the plurality of light emitting elements 130 each connected to the plurality of transistors 110.

FIG. 2(a) illustrates a cross-sectional structure of a light-emitting device 20 that is a modification of the light-emitting device 10 shown in FIG. 1(a). In addition to the structure of the light emitting device 10, the light emitting device 20 includes an isolation structure 160 for electrically isolating the plurality of transistors 110 arranged in the light emitting device 20 from each other. The separation structure 160 extends in a direction intersecting the main surface 101 of the substrate 105, as shown in FIG. 2(a). Isolation structure 160 may include a dielectric such as silicon oxide or silicon nitride. In other words, isolation structure 160 may be embedded with a dielectric material.

FIG. 2(b) illustrates a plan view taken along line A-A' shown in FIG. 2(a). On the other hand, the cross-sectional view shown in FIG. 2(a) is a cross-sectional view taken along line BB' in FIG. 2(b). As shown in FIG. 2B, the isolation structure 160 may be arranged to surround the transistor 110 in the orthogonal projection onto the main surface 101 of the substrate 105. Further, as shown in FIG. 2A, the separation structure 160 may be provided so as to penetrate the substrate 105 from the main surface 101 to the main surface 102 of the substrate 105.

In such a light emitting device 20, since the transistor 110 is surrounded by the isolation structure 160, strong element isolation is performed and leakage current can be reduced. Furthermore, since the isolation structure 160 makes it difficult for the depletion layer to expand when a voltage is applied, parasitic capacitance is reduced and the transistor 110 can be driven faster. Further, a plug 142 is connected to the well region 115, and the potential of the well region 115 can be controlled.

FIG. 3 illustrates a cross-sectional structure of a light-emitting device 30 that is a modification of the light-emitting device 20 shown in FIG. 2(a). In addition to the configuration of the light emitting device 20, the light emitting device 30 includes a transistor 170. The transistor 170 includes a gate electrode 171 disposed along the main surface 101 of the substrate 105 , a diffusion region 172 functioning as one of a source region or a drain region disposed on the main surface 101 of the substrate 105 , and a diffusion region 172 disposed along the main surface 101 of the substrate 105 . A diffusion region 173 functioning as the other of the source region and the drain region disposed on the main surface 101 is included. Furthermore, a gate insulating film 174 is disposed between the well region 175 where the channel region is formed and the gate electrode 171. Further, an element isolation structure 176 may be provided at the outer edge of the transistor 170. Here, the expression "diffusion regions 172 and 173 disposed on the main surface 101 of the substrate 105" is not limited to the case where the diffusion regions 172 and 173 are exposed as the main surface 101, as described above. For example, an insulating layer such as silicon oxide may be disposed on the diffusion regions 172 and 173.

As shown in FIG. 3, in addition to the transistor 110 in which a channel region through which current flows in a direction crossing the main surface 101 of the substrate 105 is formed, a channel region through which current flows in a direction along the main surface 101 is formed. A transistor 170 may be disposed on the substrate 105. This improves the degree of freedom in circuit configuration and circuit layout in the light emitting device 30.

FIG. 4 illustrates a cross-sectional structure of a light-emitting device 40 that is a modification of the light-emitting device 30 shown in FIG. 3. In addition to the configuration of the light emitting device 30, the light emitting device 40 includes a transistor 180 and a wiring structure 190 arranged on a substrate 151. When the transistor 180 is provided on the substrate 151, the substrate 151 can be a semiconductor substrate using silicon or the like. The transistor 180 includes a gate electrode 181 disposed along the main surface 153 of the substrate 151 , a diffusion region 182 functioning as one of a source region or a drain region disposed on the main surface 153 of the substrate 151 , and a diffusion region 182 disposed along the main surface 153 of the substrate 151 . A diffusion region 183 functioning as the other of the source region and the drain region disposed on the main surface 153 is included. Furthermore, a gate insulating film 184 is disposed between the well region 185 where the channel region is formed and the gate electrode. Furthermore, an element isolation structure 186 may be provided at the outer edge of the transistor 180. In this way, the configuration of transistor 180 may be similar to the configuration of transistor 170. However, transistor 170 and transistor 180 may have different dimensions. For example, the gate insulating film 174 and the gate insulating film 184 may have different thicknesses, or may have different gate lengths and gate widths. The wiring structure 190 may include a wiring pattern 191 and a plug 192 disposed within the insulating layer 152.

In the light emitting device 40, a transistor 180 is arranged on the substrate 151. Transistor 180 is electrically connected to substrate 105 via wiring structure 190. For example, transistor 180 may be connected to transistor 110 disposed on substrate 105, as shown in FIG. 4, or may be connected to transistor 170. By disposing transistors not only on the substrate 105 but also on the substrate 151, the number of transistors that can be disposed per area of the light emitting device 40 increases, and as a result, high density of various elements in the light emitting device 40 can be realized. . For example, by distributing the transistors connected to one light emitting element 130 between the substrate 105 and the substrate 151, the density of the light emitting elements 130 can be increased.

FIG. 5 illustrates a cross-sectional structure of a light-emitting device 50 that is a modification of the light-emitting device 10 shown in FIG. 1(a). In addition to the structure of the light emitting device 10, the light emitting device 50 includes silicide 116 disposed in at least a portion of the gate electrode 111 and the diffusion region 112 of the transistor 110. Silicide 116 is an alloy of silicon and a metal such as cobalt, nickel, or titanium. Therefore, for example, polysilicon or the like may be used for the gate electrode 111. In the light emitting device 50, the contact resistance between the gate electrode 111, the diffusion region 112, and the plug 142 of the wiring structure 140 is reduced by disposing the silicide 116. As a result, faster driving of transistor 110 is possible.

FIG. 6 illustrates a cross-sectional structure of a light emitting device 60 that is a modification of the light emitting device 20 shown in FIG. 2(a). FIG. 7(a) illustrates a plan view taken along line C-C' shown in FIG. 6. FIG. 7(b) illustrates a plan view taken along line DD' shown in FIG. 6. On the other hand, the cross-sectional view shown in FIG. 6 is a cross-sectional view taken along line E-E' in FIGS. 7(a) and 7(b).

A plurality of transistors including mutually adjacent transistors 110 and 110' shown in FIG. 6 are arranged on the substrate 105. At this time, the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' are electrically isolated from each other. On the other hand, the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' are electrically connected to each other. As shown in FIG. 6, transistor 110 and transistor 110' may share the same diffusion region 113.

Between the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110', a main surface is formed from the main surface 101 of the substrate 105 so as to electrically isolate the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' from each other. A separation structure 160 is provided extending toward the surface 102. Unlike the configuration shown in FIG. 2A, this isolation structure 160 is not arranged between the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110'. That is, in the light emitting device 60, the isolation structure 160 is located between the portion 161 arranged to surround the transistor 110 and the transistor 110' and the transistor 110 and the transistor 110' in the orthogonal projection onto the main surface 101 of the substrate 105. 162. At this time, the height of the portion 161 in the direction intersecting the principal surface 101 of the substrate 105 is higher than the height of the portion 162 in the direction intersecting the principal surface 101 of the substrate 105. Thereby, the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' are electrically isolated from each other, while the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' are electrically connected to each other. has been done. A portion 162 of the isolation structure 160 separates the diffusion regions 112 of the two transistors 110, 110', while the diffusion regions 113 are connected by the two transistors 110, 110'.

As shown in FIG. 6, the portion 162 of the isolation structure 160 is disposed from the main surface 101 of the substrate 105 to the middle of the well region 115, but the present invention is not limited thereto. It is sufficient that the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' can be electrically isolated; for example, the portion 162 of the isolation structure 160 does not need to be disposed in the well region 115. Further, for example, it is sufficient that the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' can be electrically connected. The diffusion region 113 may be disposed as shown in FIG.

FIG. 7(c) shows a circuit configuration of the light emitting device 60 shown in FIGS. 6, 7(a), and 7(b). The symbols “a” to “e” shown in FIG. 6 correspond to the respective nodes a to e shown in FIG. 7(c). As shown in FIG. 7C, the light emitting device 60 has a configuration in which two transistors 110 and 110' are connected to one light emitting element 130. With this configuration, for example, it is possible to more easily increase the resolution from no light emission (minimum luminous intensity) to maximum luminous intensity while increasing the luminous intensity of the light emitting element 130.

FIG. 8 illustrates a cross-sectional structure of a light emitting device 70 that is a modification of the light emitting device 20 shown in FIG. 2(a). FIG. 9(a) illustrates a plan view taken along line C-C' shown in FIG. 8. FIG. 9(b) illustrates a plan view along line DD' shown in FIG. 6. On the other hand, the cross-sectional view shown in FIG. 8 is a cross-sectional view taken along E-E' in FIGS. 9(a) and 7(b).

A plurality of transistors 110 including mutually adjacent transistors 110 and transistors 110' shown in FIG. 8 are arranged on the substrate 105. Further, on the main surface 102 of the substrate 105, a plurality of light emitting elements are arranged, including a light emitting element 130 controlled by a transistor 110 and a light emitting element 130' controlled by a transistor 110'. At this time, the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' are electrically isolated from each other. Separate light emitting elements 130 and 130' are connected to the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110', which are electrically isolated from each other. On the other hand, the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' are electrically connected to each other. As shown in FIG. 6, transistor 110 and transistor 110' may share the same diffusion region 112.

A layer is formed between the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' from the main surface 102 of the substrate 105 so as to electrically isolate the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' from each other. A separation structure 160 extending toward the main surface 101 is provided. Unlike the configuration shown in FIG. 2A, this isolation structure 160 is not arranged between the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110'. That is, in the light emitting device 70, the separation structure 160 is located between the portion 161 disposed to surround the transistor 110 and the transistor 110' and the transistor 110 and the transistor 110' in the orthogonal projection onto the main surface 101 of the substrate 105. 163. At this time, the height of the portion 161 in the direction intersecting the principal surface 101 of the substrate 105 is higher than the height of the portion 163 in the direction intersecting the principal surface 101 of the substrate 105. As a result, the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' are electrically isolated from each other, while the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' are electrically connected to each other. has been done. A portion 163 of the isolation structure 160 separates the diffusion regions 113 of the two transistors 110, 110', while the diffusion regions 112 are connected by the two transistors 110, 110'.

As shown in FIG. 8, the portion 163 of the isolation structure 160 is disposed from the main surface 102 of the substrate 105 to the middle of the well region 115, but the present invention is not limited thereto. It is sufficient that the diffusion region 113 of the transistor 110 and the diffusion region 113 of the transistor 110' can be electrically isolated; for example, the portion 163 of the isolation structure 160 does not need to be disposed in the well region 115. Further, for example, it is sufficient that the diffusion region 112 of the transistor 110 and the diffusion region 112 of the transistor 110' can be electrically connected. The diffusion region 112 may be disposed as shown in FIG.

FIG. 9(c) shows the circuit configuration of the light emitting device 70 shown in FIGS. 8, 9(a), and 9(b). The symbols "a", "c" to "f" shown in FIG. 6 correspond to the respective nodes a, c to f shown in FIG. 7(c). As shown in FIG. 7C, the light emitting device 60 can supply power to the two light emitting elements 130 and 130' from one node d. In other words, the circuit configuration can be simplified.

FIG. 10 illustrates a cross-sectional structure of a light emitting device 80 that is a modification of the light emitting device 10 shown in FIG. 1(a). In the light-emitting device 10 shown in FIG. It is installed so that it passes through. On the other hand, in the light emitting device 80 shown in FIG. 10, the gate electrode 111 is formed from the main surface 101 of the substrate 105 to the inside of the diffusion region 113 arranged on the main surface 102 side. Further, the gate insulating film 114 is also formed from the main surface 101 of the substrate 105 to the inside of the diffusion region 113 arranged on the main surface 102 side, without penetrating the substrate 105. Also in the configuration shown in FIG. 10, by applying a voltage to the gate electrode 111, a current can be caused to flow between the diffusion region 112 and the diffusion region 113 near the interface between the well region 115 and the gate insulating film 114. A channel region is formed. That is, in the light emitting device 80 as well, the transistor 110 functions as a switch element.

FIG. 11 is a diagram showing a configuration example of a pixel circuit 200 for driving and controlling one light emitting element 130. In FIG. 11, the above-described transistor 110 corresponds to, for example, the transistor 211. A drain region of a transistor 211 and a source region of a transistor 212 are connected to the light emitting element 130 . The drain region of the transistor 211 may correspond to the above-described diffusion region 113. A transistor 214 is connected to the gate electrode of the transistor 211 . The gate electrode of the transistor 211 may correspond to the gate electrode 111 described above. A transistor 213 is connected to the source region of the transistor 211 . The source region of the transistor 211 may correspond to the above-described diffusion region 112. Further, a capacitive element C1 is connected between the gate electrode and the source region of the transistor 211, and a capacitive element C2 is connected between the source electrode of the transistor 211 and the power supply line Vcc.

Transistor 214 is controlled via signal line 222 . When the transistor 214 is turned on, the voltage value (luminance signal) of the signal line 224 is written to the gate electrode of the transistor 211. Transistor 213 is controlled via signal line 223. When the transistor 213 is turned on, a current according to the voltage value (luminance signal) written to the gate electrode of the transistor 211 flows from the power supply line Vcc to the light emitting element 130 via the transistor 213 and the transistor 211. Thereby, the light emitting element 130 emits light with an amount of light according to the luminance signal. By the switching operation of the transistor 213, a period during which the light emitting element 130 is in a non-emitting state (non-emitting period) can be provided, and the ratio of the emitting period and the non-emitting period of the light emitting element 130 can be controlled (so-called duty control). . Duty control can reduce afterimage blur caused by pixels emitting light over one frame period. Therefore, it is possible to improve the image quality especially when displaying a moving image. Transistor 212 is controlled via signal line 221. When the transistor 212 is turned on, the potential of the power supply line Vss to which the drain region of the transistor 212 is connected is set so that no current flows through the light emitting element 130 and no light is emitted. The transistor 211 can also be called a drive transistor or the like. The transistor 214 can also be called a selection transistor, a write transistor, or the like. The transistor 213 can also be called a light emission control transistor or the like. The transistor 212 may also be called a reset transistor or the like.

In the pixel circuit 200 illustrated in FIG. 11, a higher voltage may be applied to the transistor 211 and the transistor 212 connected to the light emitting element 130 than to the transistor 214 and the transistor 213. FIG. 12 illustrates a cross-sectional structure of a light emitting device 90 for realizing the pixel circuit 200 shown in FIG. 11. The configuration shown in FIG. 12 can be said to be a modification of the light emitting device 40 shown in FIG. 4 in which the transistors connected to one light emitting element 130 are distributed between the substrate 105 and the substrate 151.

In this embodiment, the transistor 211 and the transistor 212 are formed on the substrate 105. Transistor 213 and transistor 214 are formed on substrate 151. That is, the transistors 211 to 214 are formed on different substrates 105 and 151 depending on the voltages applied to the transistors 211 to 214. For example, the design values of the breakdown voltages of the transistors 211 and 212 and the transistors 213 and 214 may be different from each other. Further, for example, the transistor 211 and the transistor 212 may have the same design value of breakdown voltage. Similarly, the transistor 213 and the transistor 214 may have the same design value of breakdown voltage. Here, the transistor 211 and the transistor 212 may have the same structure as the above-described transistor 110, as shown in FIG. Further, the transistor 213 and the transistor 214 may have the same structure as the above-described transistor 180, as shown in FIG.

Here, the arrangement of the transistors 211 to 214 is not limited to the configuration shown in FIG. 12. For example, at least one of the transistor 213 and the transistor 214 may be provided on the substrate 105. For example, the transistors 211 to 214 included in the pixel circuit 200 for driving one light emitting element 130 may be arranged on one substrate 105. Further, in the configuration shown in FIG. 12, the capacitive elements C1 and C2 are arranged on the wiring structure 190 provided on the substrate 151, but the present invention is not limited to this. It is possible to arrange it in the wiring structure 140.

In any of the configurations of the light emitting devices 10 to 90 described above, the transistor 110 controls the light emitting element 130. In other words, the transistor 110 has a function of supplying power for driving the light emitting element 130. Therefore, it is possible that a high electric field is applied near the diffusion region 112. Therefore, the thickness of a certain part of the gate insulating film 114 of the transistor 110 may be thicker than the thickness of another part between the part and the main surface 102 of the substrate 105. For example, the thickness of the gate insulating film 114 may be reduced stepwise or continuously from the main surface 101 of the substrate 105 toward the main surface 102. By making the gate insulating film 114 of the transistor 110 thicker on the diffusion region 112 side than on the diffusion region 113 side, a transistor 110 that is resistant to application of a high electric field can be realized. By increasing the thickness of the gate insulating film 114 of the transistor 110 on the diffusion region 112 side, the reliability of the light emitting devices 10 to 70 can be improved.

A manufacturing method for manufacturing the above-mentioned light emitting devices 10 to 90 will be described. When manufacturing the light emitting devices 10 to 90, the following steps may be included. For example, when forming the substrate 105, an SOI (Silicon On Insulator) substrate may be prepared first. After each element including the transistor 110 and the wiring structure 140 are formed on the substrate 105, the substrate 105 is bonded to the substrate 151. Next, the substrate 105 is thinned by polishing, so that the substrate 105 has a desired thickness. At this time, if an SOI substrate is used as the substrate 105, the substrate 105 can be uniformly polished relatively easily by polishing down to the insulating layer (for example, a silicon oxide layer) of the SOI substrate. That is, the SOI substrate is polished from the side on which the transistor 110 and the like are not formed, so that the main surface 102 of the substrate 105 becomes the side of the SOI substrate that was polished in the polishing process. Thereby, variations in the film thickness of the substrate 105 after thinning can be suppressed. As a result, variations in characteristics of the transistor 110 in which current flows along the film thickness direction of the substrate 105 (direction intersecting the main surface 101 of the substrate 105) are suppressed.

Further, as the substrate 105, a so-called epitaxial substrate including a first layer having a high impurity concentration and a second layer epitaxially grown on the first layer and having a lower impurity concentration than the first layer may be used. . At this time, the epitaxial substrate may be an SOI substrate including a third layer having an appropriate impurity concentration and an insulating layer disposed between the third layer and the first layer. That is, the epitaxial substrate may be an SOI substrate having a laminated structure of a second layer with a low impurity concentration/a first layer with a high impurity concentration/an insulating layer/a third layer with an appropriate impurity concentration.

A portion of the first layer doped with impurities at a high concentration functions as a diffusion region 113, and a portion of the second layer doped with impurities at a low concentration functions as a well region 115. Thereby, the step of processing the diffusion region 113 and the well region 115 can be omitted. Furthermore, if this epitaxial substrate is an SOI substrate as described above, by polishing from the third layer side, variations in the thickness of the substrate 105 after being thinned can be suppressed.

Each of the embodiments described above may be combined, or some of them may be omitted. For example, the silicide 116 disposed in the light emitting device 50 shown in FIG. 5 may be disposed in the light emitting devices 10 to 40, 60, and 70. Further, for example, in the light emitting device 40 shown in FIG. 4, the transistor 170 may not be provided. Other components can also be selected as appropriate.

Here, we will discuss application examples in which the light emitting devices 10 to 90 of this embodiment, in which light emitting elements such as organic EL elements are arranged, are applied to display devices, photoelectric conversion devices, electronic equipment, lighting devices, mobile objects, and wearable devices. This will be explained using FIGS. 13 to 19(a) and 19(b). First, after showing details and modifications of each structure of the light emitting devices 10 to 90 described above, an application example will be explained. Here, the description will be made assuming that the light emitting layer 131 is an organic EL layer.

Structure of Organic Light-Emitting Element An organic light-emitting element is provided by forming an insulating layer, a first electrode, an organic compound layer, and a second electrode on a substrate. A protective layer, a color filter, a microlens, etc. may be provided on the cathode. When providing a color filter, a flattening layer may be provided between the color filter and the protective layer. The flattening layer can be made of acrylic resin or the like. The same applies to the case where a flattening layer is provided between the color filter and the microlens.

Substrate Examples of the substrate include quartz, glass, silicon wafer, resin, metal, and the like. Furthermore, switching elements such as transistors and wiring may be provided on the substrate, and an insulating layer may be provided thereon. The insulating layer may be made of any material as long as it can form a contact hole so that a wiring can be formed between it and the first electrode, and can ensure insulation from unconnected wiring. For example, resin such as polyimide, silicon oxide, silicon nitride, etc. can be used.

Electrode A pair of electrodes can be used as the electrode. The pair of electrodes may be an anode and a cathode. When an electric field is applied in the direction in which the organic light-emitting element emits light, the electrode with the higher potential is the anode, and the other is the cathode. It can also be said that the electrode that supplies holes to the light emitting layer is the anode, and the electrode that supplies electrons is the cathode.

The material for the anode should preferably have a work function as large as possible. For example, metals such as gold, platinum, silver, copper, nickel, palladium, cobalt, selenium, vanadium, tungsten, mixtures containing these metals, alloys containing these metals, tin oxide, zinc oxide, indium oxide, and tin oxide. Metal oxides such as indium (ITO) and indium zinc oxide can be used. Conductive polymers such as polyaniline, polypyrrole, and polythiophene can also be used.

These electrode materials may be used alone or in combination of two or more. Further, the anode may be composed of a single layer or a plurality of layers.

When used as a reflective electrode, for example, chromium, aluminum, silver, titanium, tungsten, molybdenum, an alloy thereof, or a laminate thereof can be used. It is also possible for the above materials to function as a reflective film without having the role of an electrode. In addition, when used as a transparent electrode, a transparent conductive layer of oxide such as indium tin oxide (ITO) or indium zinc oxide can be used, but is not limited thereto. Photolithography technology can be used to form the electrodes.

On the other hand, the material for the cathode should preferably have a small work function. Examples include alkali metals such as lithium, alkaline earth metals such as calcium, single metals such as aluminum, titanium, manganese, silver, lead, and chromium, or mixtures containing these metals. Alternatively, an alloy that is a combination of these metals can also be used. For example, magnesium-silver, aluminum-lithium, aluminum-magnesium, silver-copper, zinc-silver, etc. can be used. Metal oxides such as indium tin oxide (ITO) can also be used. These electrode materials may be used alone or in combination of two or more. Further, the cathode may have a single layer structure or a multilayer structure. Among them, it is preferable to use silver, and in order to reduce agglomeration of silver, it is more preferable to use a silver alloy. The alloy ratio does not matter as long as silver agglomeration can be reduced. For example, the ratio of silver:other metal may be 1:1, 3:1, etc.

The cathode may be a top emission element using an oxide conductive layer such as ITO, or may be a bottom emission element using a reflective electrode such as aluminum (Al), and is not particularly limited. The method for forming the cathode is not particularly limited, but it is more preferable to use a direct current or an alternating current sputtering method because the coverage of the film is good and the resistance can be easily lowered.

Pixel separation layer The pixel separation layer is formed of a silicon nitride (SiN) film, silicon oxynitride (SiON) film, or silicon oxide (SiO) film formed using a chemical vapor deposition method (CVD method). Ru. In order to increase the in-plane resistance of the organic compound layer, it is preferable that the organic compound layer, especially the hole transport layer, be thinly formed on the side wall of the pixel separation layer. Specifically, by increasing the taper angle of the side wall of the pixel separation layer and the film thickness of the pixel separation layer to increase vignetting during vapor deposition, the film thickness of the side wall can be reduced.

On the other hand, it is preferable to adjust the sidewall taper angle of the pixel separation layer and the film thickness of the pixel separation layer to such an extent that no voids are formed in the protective layer formed thereon. Since no voids are formed in the protective layer, the occurrence of defects in the protective layer can be reduced. Since the occurrence of defects in the protective layer is reduced, deterioration in reliability such as the occurrence of dark spots and poor conduction of the second electrode can be reduced.

According to this embodiment, even if the taper angle of the sidewall of the pixel isolation layer is not steep, it is possible to effectively suppress charge leakage to adjacent pixels. As a result of this study, it was found that the taper angle can be sufficiently reduced if the taper angle is in the range of 60 degrees or more and 90 degrees or less. The thickness of the pixel separation layer is preferably from 10 nm to 150 nm. Further, the same effect can be obtained even if the pixel electrode is composed only of pixel electrodes without a pixel separation layer. However, in this case, it is preferable that the film thickness of the pixel electrode be less than half that of the organic layer, or that the end portion of the pixel electrode be tapered in a forward direction of less than 60°, since short circuits in the organic light emitting element can be reduced.

In addition, even when the first electrode is a cathode and the second electrode is an anode, a high color gamut and low voltage drive are possible by forming an electron transport material, a charge transport layer, and a light emitting layer on the charge transport layer. Become.

Organic Compound Layer The organic compound layer may be formed in a single layer or in multiple layers. When it has multiple layers, it may be called a hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, or electron injection layer depending on its function. The organic compound layer is mainly composed of organic compounds, but may also contain inorganic atoms and inorganic compounds. For example, it may include copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, and the like. The organic compound layer may be disposed between the first electrode and the second electrode, or may be disposed in contact with the first electrode and the second electrode.

Protective layer A protective layer may be provided on the cathode. For example, by adhering glass provided with a moisture absorbent on the cathode, it is possible to reduce the intrusion of water and the like into the organic compound layer, thereby reducing the occurrence of display defects. In another embodiment, a passivation film made of silicon nitride or the like may be provided on the cathode to reduce the infiltration of water or the like into the organic compound layer. For example, after forming the cathode, the cathode may be transferred to another chamber without breaking the vacuum, and a 2 μm thick silicon nitride film may be formed using the CVD method to form a protective layer. A protective layer may be provided using an atomic deposition method (ALD method) after film formation using a CVD method. The material of the film formed by the ALD method is not limited, but may be silicon nitride, silicon oxide, aluminum oxide, or the like. Silicon nitride may be further formed by CVD on the film formed by ALD. A film formed by the ALD method may have a smaller thickness than a film formed by the CVD method. Specifically, it may be 50% or less, or even 10% or less.

Color Filter A color filter may be provided on the protective layer. For example, a color filter that takes into account the size of the organic light emitting element may be provided on another substrate and bonded to the substrate on which the organic light emitting element is provided, or a color filter may be formed using photolithography technology on the protective layer shown above. , the color filter may be patterned. The color filter may be made of polymer.

Flattening layer A flattening layer may be provided between the color filter and the protective layer. The planarization layer is provided for the purpose of reducing the unevenness of the underlying layer. It may also be referred to as a material resin layer without limiting the purpose. The planarization layer may be composed of an organic compound, and may be a low molecule or a polymer, but preferably a polymer.

The planarization layer may be provided above and below the color filter, and its constituent materials may be the same or different. Specific examples include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, urea resin, and the like.

Microlens The organic light emitting device may have an optical member such as a microlens on its light output side. The microlens may be made of acrylic resin, epoxy resin, or the like. The purpose of the microlens may be to increase the amount of light extracted from the organic light emitting device and to control the direction of the extracted light. The microlens may have a hemispherical shape. When the microlens has a hemispherical shape, among the tangents that touch the hemisphere, there is a tangent that is parallel to the insulating layer, and the point of contact between the tangent and the hemisphere is the vertex of the microlens. The apex of the microlens can be similarly determined in any cross-sectional view. That is, among the tangents that touch the semicircle of the microlens in the cross-sectional view, there is a tangent that is parallel to the insulating layer, and the point of contact between the tangent and the semicircle is the apex of the microlens.

It is also possible to define the midpoint of the microlens. In the cross section of the microlens, a line segment from a point where one circular arc ends to a point where another circular arc ends can be imagined, and the midpoint of the line segment can be called the midpoint of the microlens. The cross section for determining the apex and midpoint may be a cross section perpendicular to the insulating layer.

The microlens has a first surface having a convex portion and a second surface opposite to the first surface. It is preferable that the second surface is arranged closer to the functional layer than the first surface. In order to adopt such a configuration, it is necessary to form a microlens on the light emitting device. When the functional layer is an organic layer, it is preferable to avoid processes that involve high temperatures in the manufacturing process. In addition, when the second surface is arranged closer to the functional layer than the first surface, it is preferable that the glass transition temperature of all the organic compounds constituting the organic layer is 100°C or higher, and 130°C. It is more preferable that it is above.

Counter Substrate A counter substrate may be provided on the planarization layer. The counter substrate is called a counter substrate because it is provided at a position corresponding to the above-described substrate. The constituent material of the counter substrate may be the same as that of the above-described substrate. The counter substrate may be the second substrate when the above-mentioned substrate is the first substrate.

Organic layer Organic compound layer (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, etc.) constituting the organic light emitting device according to an embodiment of the present invention ) is formed by the method shown below.

The organic compound layer constituting the organic light emitting device according to an embodiment of the present invention can be formed using a dry process such as a vacuum evaporation method, an ionization evaporation method, sputtering, or plasma. Further, instead of the dry process, a wet process may be used in which the material is dissolved in an appropriate solvent and a layer is formed by a known coating method (for example, spin coating, dipping, casting method, LB method, inkjet method, etc.).

If the layer is formed by a vacuum deposition method, a solution coating method, or the like, crystallization is less likely to occur and the layer is excellent in stability over time. Furthermore, when forming a film by a coating method, the film can also be formed in combination with an appropriate binder resin.

Examples of the binder resin include, but are not limited to, polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin. .

Further, these binder resins may be used alone as a homopolymer or a copolymer, or two or more types may be used as a mixture. Furthermore, if necessary, known additives such as plasticizers, antioxidants, and ultraviolet absorbers may be used in combination.

Pixel Circuit The light emitting device may include a pixel circuit connected to the light emitting element. The pixel circuit may be of an active matrix type that controls light emission of the first light emitting element and the second light emitting element independently. Active matrix type circuits may be voltage programming or current programming. The drive circuit has a pixel circuit for each pixel. A pixel circuit includes a light emitting element, a transistor that controls the luminance of the light emitting element, a transistor that controls the timing of light emission, a capacitor that holds the gate voltage of the transistor that controls the luminance, and a capacitor that is connected to GND without going through the light emitting element. It may include a transistor.

The light emitting device has a display area and a peripheral area arranged around the display area. The display area has a pixel circuit, and the peripheral area has a display control circuit. The mobility of the transistors forming the pixel circuit may be lower than the mobility of the transistors forming the display control circuit.

The slope of the current-voltage characteristics of the transistors forming the pixel circuit may be smaller than the slope of the current-voltage characteristics of the transistors forming the display control circuit. The slope of the current-voltage characteristic can be measured by the so-called Vg-Ig characteristic.

The transistors forming the pixel circuit are transistors connected to a light emitting element such as a first light emitting element.

Pixel The organic light emitting device has a plurality of pixels. Each pixel has subpixels that emit different colors. For example, each subpixel may have an RGB emission color.

A region of a pixel, also called a pixel aperture, emits light. This area is the same as the first area. The pixel aperture may be less than or equal to 15 μm, and may be greater than or equal to 5 μm. More specifically, it may be 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, etc.

The distance between subpixels may be 10 μm or less, and specifically, may be 8 μm, 7.4 μm, or 6.4 μm.

Pixels can take a known arrangement form in a plan view. For example, it may be a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of the subpixel in a plan view may take any known shape. For example, a rectangle, a square such as a diamond, a hexagon, etc. Of course, it is not an exact figure, but if it has a shape close to a rectangle, it is included in the rectangle. The shape of the subpixel and the pixel arrangement can be used in combination.

Application of the organic light emitting device according to an embodiment of the present invention The organic light emitting device according to an embodiment of the present invention can be used as a component of a display device or a lighting device. Other uses include exposure light sources for electrophotographic image forming apparatuses, backlights for liquid crystal display devices, and light emitting devices having a white light source with a color filter.

The display device has an image input section that inputs image information from an area CCD, linear CCD, memory card, etc., has an information processing section that processes the input information, and displays the input image on the display section. An image information processing device may also be used.

Further, the display section of the imaging device or the inkjet printer may have a touch panel function. The driving method for this touch panel function is not particularly limited, and may be an infrared method, a capacitance method, a resistive film method, or an electromagnetic induction method. Further, the display device may be used as a display section of a multi-function printer.

Application examples of the light emitting devices 10 to 90 will be described in detail below using FIGS. 13 to 19(a) and 19(b).

FIG. 13 is a schematic diagram showing an example of a display device using the light emitting devices 10 to 90 of this embodiment. The display device 1000 may include a touch panel 1003, a display panel 1005, a frame 1006, a circuit board 1007, and a battery 1008 between an upper cover 1001 and a lower cover 1009. Flexible printed circuits FPCs 1002 and 1004 are connected to the touch panel 1003 and the display panel 1005. Active elements such as transistors are arranged on the circuit board 1007. The battery 1008 does not need to be provided unless the display device 1000 is a portable device, and even if it is a portable device, it does not need to be provided at this location. The light emitting devices 10 to 90 can be applied to the display panel 1005. The light emitting devices 10 to 90 functioning as the display panel 1005 operate by being connected to active elements such as transistors arranged on the circuit board 1007.

A display device 1000 shown in FIG. 13 is a display section of a photoelectric conversion device (imaging device) that has an optical section having a plurality of lenses and an imaging element that receives light that has passed through the optical section and photoelectrically converts it into an electrical signal. May be used for. The photoelectric conversion device may include a display unit that displays information acquired by the image sensor. Further, the display section may be a display section exposed to the outside of the photoelectric conversion device, or a display section disposed within the finder. The photoelectric conversion device may be a digital camera or a digital video camera.

FIG. 14 is a schematic diagram showing an example of a photoelectric conversion device using the light emitting devices 10 to 90 of this embodiment. The photoelectric conversion device 1100 may include a viewfinder 1101, a rear display 1102, an operation unit 1103, and a housing 1104. Photoelectric conversion device 1100 may also be called an imaging device. The light emitting devices 10 to 90 of this embodiment can be applied to the viewfinder 1101 and the rear display 1102, which are display units. In this case, the light emitting devices 10 to 90 may display not only images to be captured, but also environmental information, imaging instructions, and the like. The environmental information may include the intensity of external light, the direction of external light, the moving speed of the subject, the possibility that the subject will be blocked by an object, and the like.

Since the timing suitable for imaging is often only a short time, it is better to display information as early as possible. Therefore, light emitting devices 10 to 90 in which pixels using an organic light emitting material such as an organic EL element are arranged in the display area may be used for the viewfinder 1101 or the rear display 1102. This is because organic light-emitting materials have a fast response speed. The light emitting devices 10 to 90 using organic light emitting materials are more suitable than liquid crystal display devices for these devices where display speed is required.

Photoelectric conversion device 1100 has an optical section (not shown). The optical section has a plurality of lenses, and forms an image on a photoelectric conversion element (not shown) housed in a housing 1104 that receives the light that has passed through the optical section. The focus of the plural lenses can be adjusted by adjusting their relative positions. This operation can also be performed automatically.

The light emitting devices 10 to 90 may be applied to a display section of an electronic device. In that case, it may have both a display function and an operation function. Examples of mobile terminals include mobile phones such as smartphones, tablets, and head-mounted displays.

FIG. 15 is a schematic diagram showing an example of an electronic device using the light emitting devices 10 to 90 of this embodiment. Electronic device 1200 includes a display section 1201, an operation section 1202, and a housing 1203. The housing 1203 may include a circuit, a printed circuit board including the circuit, a battery, and a communication unit. The operation unit 1202 may be a button or a touch panel type reaction unit. The operation unit 1202 may be a biometric recognition unit that recognizes a fingerprint and performs unlocking and the like. A mobile device having a communication section can also be called a communication device. The light emitting devices 10 to 90 of this embodiment can be applied to the display portion 1201.

16(a) and 16(b) are schematic diagrams showing an example of a display device using the light emitting devices 10 to 90 of this embodiment. FIG. 16(a) shows a display device such as a television monitor or a PC monitor. The display device 1300 has a frame 1301 and a display portion 1302. The light emitting devices 10 to 90 of this embodiment can be applied to the display portion 1302. The display device 1300 may include a base 1303 that supports the frame 1301 and the display portion 1302. The base 1303 is not limited to the form shown in FIG. 16(a). For example, the lower side of the picture frame 1301 may also serve as the base 1303. Further, the frame 1301 and the display portion 1302 may be curved. The radius of curvature may be greater than or equal to 5000 mm and less than or equal to 6000 mm.

FIG. 16(b) is a schematic diagram showing another example of a display device using the light emitting devices 10 to 90 of this embodiment. The display device 1310 in FIG. 16(b) is configured to be foldable, and is a so-called foldable display device. The display device 1310 includes a first display section 1311, a second display section 1312, a housing 1313, and a bending point 1314. The light emitting devices 10 to 90 of this embodiment can be applied to the first display section 1311 and the second display section 1312. The first display section 1311 and the second display section 1312 may be one seamless display device. The first display section 1311 and the second display section 1312 can be separated at a bending point. The first display section 1311 and the second display section 1312 may each display different images, or the first display section and the second display section may display one image.

FIG. 17 is a schematic diagram showing an example of a lighting device using the light emitting devices 10 to 90 of this embodiment. The lighting device 1400 may include a housing 1401, a light source 1402, a circuit board 1403, an optical film 1404, and a light diffusion section 1405. The light emitting devices 10 to 90 of this embodiment can be applied to the light source 1402. The optical film 1404 may be a filter that improves the color rendering properties of the light source. The light diffusion unit 1405 can effectively diffuse the light from a light source, such as when lighting up, and can deliver the light to a wide range. If necessary, a cover may be provided on the outermost side. The illumination device 1400 may include both the optical film 1404 and the light diffusion section 1405, or may include only one of them.

The lighting device 1400 is, for example, a device that illuminates a room. The lighting device 1400 may emit white, neutral white, or any other color from blue to red. It may have a dimming circuit to dim them. The lighting device 1400 may include a power supply circuit connected to the light emitting devices 10 to 90 that function as a light source 1402. The power supply circuit is a circuit that converts alternating current voltage to direct current voltage. Further, white has a color temperature of 4200K, and neutral white has a color temperature of 5000K. Furthermore, the lighting device 1400 may include a color filter. Furthermore, the lighting device 1400 may include a heat radiation section. The heat dissipation section radiates heat within the device to the outside of the device, and may be made of metal with high specific heat, liquid silicon, or the like.

FIG. 18 is a schematic diagram of an automobile having a tail lamp, which is an example of a vehicle lamp using the light emitting devices 10 to 90 of this embodiment. The automobile 1500 may have a tail lamp 1501, and the tail lamp 1501 may be turned on when a brake operation or the like is performed. The light emitting devices 10 to 90 of this embodiment may be used as a headlamp as a vehicle lamp. A car is an example of a moving object, and the moving object may be a ship, a drone, an aircraft, a railway vehicle, an industrial robot, or the like. The moving body may include a body and a light provided therein. The light may indicate the current position of the aircraft.

The light emitting devices 10 to 90 of this embodiment can be applied to the tail lamp 1501. The tail lamp 1501 may include a protection member that protects the light emitting devices 10 to 90 functioning as the tail lamp 1501. The protective member may be made of any material as long as it has a certain degree of strength and is transparent, but may be made of polycarbonate or the like. Further, the protective member may be made by mixing furandicarboxylic acid derivatives, acrylonitrile derivatives, etc. with polycarbonate.

The automobile 1500 may have a vehicle body 1503 and a window 1502 attached thereto. The window may be a window for checking the front and rear of the automobile, or may be a transparent display. The light emitting devices 10 to 90 of this embodiment may be used in the transparent display. In this case, constituent materials such as electrodes included in the light emitting devices 10 to 90 are made of transparent members.

Further application examples of the light emitting devices 10 to 90 of this embodiment will be described with reference to FIGS. 19(a) and 19(b). The light emitting devices 10 to 90 can be applied to systems that can be worn as wearable devices, such as smart glasses, head mounted displays (HMD), and smart contacts. An imaging display device used in such an application example includes an imaging device capable of photoelectrically converting visible light and a light emitting device capable of emitting visible light.

FIG. 19(a) illustrates glasses 1600 (smart glasses) according to one application example. An imaging device 1602 such as a CMOS sensor or a SPAD is provided on the front side of the lens 1601 of the glasses 1600. Further, on the back side of the lens 1601, the light emitting devices 10 to 90 of this embodiment are provided.

Glasses 1600 further include a control device 1603. The control device 1603 functions as a power source that supplies power to the imaging device 1602 and the light emitting devices 10 to 90 according to each embodiment. Further, the control device 1603 controls the operations of the imaging device 1602 and the light emitting devices 10 to 90. An optical system for condensing light onto an imaging device 1602 is formed in the lens 1601.

FIG. 19(b) illustrates glasses 1610 (smart glasses) according to one application example. The glasses 1610 have a control device 1612, and the control device 1612 is equipped with an imaging device corresponding to the imaging device 1602 and light emitting devices 10 to 90. The lens 1611 is formed with an optical system for projecting the light emitted from the imaging device in the control device 1612 and the light emitting devices 10 to 90, and an image is projected onto the lens 1611. The control device 1612 functions as a power source that supplies power to the imaging device and the light emitting devices 10 to 90, and controls the operation of the imaging device and the light emitting devices 10 to 90. The control device 1612 may include a line-of-sight detection unit that detects the wearer's line of sight. Infrared rays may be used to detect line of sight. The infrared light emitting unit emits infrared light to the eyeballs of the user who is gazing at the displayed image. A captured image of the eyeball is obtained by detecting the reflected light of the emitted infrared light from the eyeball by an imaging section having a light receiving element. By having a reduction means for reducing light emitted from the infrared light emitting section to the display section in plan view, deterioration in image quality is reduced.

The user's line of sight with respect to the displayed image is detected from the captured image of the eyeball obtained by infrared light imaging. Any known method can be applied to line of sight detection using a captured image of the eyeball. As an example, a line of sight detection method based on a Purkinje image by reflection of irradiated light on the cornea can be used.

More specifically, line of sight detection processing is performed based on the pupillary corneal reflex method. Using the pupillary corneal reflex method, the user's line of sight is detected by calculating a line of sight vector representing the direction (rotation angle) of the eyeball based on the pupil image and Purkinje image included in the captured image of the eyeball. Ru.

The light emitting devices 10 to 90 according to an embodiment of the present invention may include an imaging device having a light receiving element, and may control a display image based on user's line-of-sight information from the imaging device.

Specifically, the light emitting devices 10 to 90 determine a first viewing area that the user gazes at and a second viewing area other than the first viewing area based on the line of sight information. The first viewing area and the second viewing area may be determined by the control devices of the light emitting devices 10 to 90, or may be determined by an external control device and may be received. In the display areas of the light emitting devices 10 to 90, the display resolution of the first viewing area may be controlled to be higher than the display resolution of the second viewing area. That is, the resolution of the second viewing area may be lower than that of the first viewing area.

The display area has a first display area and a second display area different from the first display area, and an area with a higher priority is determined from the first display area and the second display area based on the line of sight information. be done. The first display area and the second display area may be determined by the control devices of the light emitting devices 10 to 90, or may be determined by an external control device. The resolution of areas with high priority may be controlled to be higher than the resolution of areas other than areas with high priority. In other words, the resolution of an area with a relatively low priority may be lowered.

Note that AI may be used to determine the first viewing area and the area with high priority. AI is a model configured to estimate the angle of line of sight and the distance to the object in front of the line of sight from the image of the eyeball, using the image of the eyeball and the direction in which the eyeball was actually looking in the image as training data. It's good. The AI program may be included in the light emitting devices 10 to 90, the imaging device, or an external device. If the external device has it, it is transmitted to the light emitting devices 10 to 90 via communication.

When display control is performed based on visual detection, it can be preferably applied to smart glasses that further include an imaging device that captures an image of the outside. Smart glasses can display captured external information in real time.

The disclosure of this specification includes the following light emitting device, display device, photoelectric conversion device, electronic device, and method for manufacturing a light emitting device.

(Item 1)
A light emitting device comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
A light emitting device, wherein the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction.

(Item 2)
The light emitting device according to item 1, wherein the second diffusion region and the light emitting element are electrically connected.

(Item 3)
A plurality of the transistors are arranged on the first substrate,
The first diffusion regions of each of the plurality of transistors are electrically isolated from each other,
3. The light emitting device according to item 1 or 2, wherein the second diffusion regions of each of the plurality of transistors are electrically isolated from each other.

(Item 4)
The first substrate further includes an isolation structure extending in the intersecting direction so as to electrically isolate the plurality of transistors from each other,
4. The light emitting device according to item 3, wherein the isolation structure is arranged to surround the transistor in orthogonal projection onto the first principal surface.

(Item 5)
5. The light emitting device according to item 4, wherein the separation structure includes a dielectric.

(Item 6)
6. The light emitting device according to item 4 or 5, wherein the separation structure is provided so as to penetrate the first substrate from the first main surface to the second main surface.

(Item 7)
A plurality of transistors including a first transistor and a second transistor adjacent to each other are arranged on the first substrate,
the first diffusion region of the first transistor and the first diffusion region of the second transistor are electrically isolated from each other;
3. The light emitting device according to item 1 or 2, wherein the second diffusion region of the first transistor and the second diffusion region of the second transistor are electrically connected to each other.

(Item 8)
between the first diffusion region of the first transistor and the first diffusion region of the second transistor, the first diffusion region of the first transistor and the first diffusion region of the second transistor are connected to each other; 8. The light emitting device according to item 7, further comprising a separation structure extending from the first main surface toward the second main surface so as to electrically isolate the light emitting device.

(Item 9)
9. The light emitting device according to item 8, wherein the isolation structure is not disposed between the second diffusion region of the first transistor and the second diffusion region of the second transistor.

(Item 10)
The isolation structure is arranged between a first portion surrounding the first transistor and the second transistor and the first transistor and the second transistor in orthogonal projection onto the first main surface. a second part;
10. The light emitting device according to item 8 or 9, wherein the height of the first portion in the intersecting direction is higher than the height of the second portion in the intersecting direction.

(Item 11)
A plurality of transistors including a first transistor and a second transistor adjacent to each other are arranged on the first substrate,
A plurality of light emitting elements including a first light emitting element controlled by the first transistor and a second light emitting element controlled by the second transistor are arranged on the second main surface,
the first diffusion region of the first transistor and the first diffusion region of the second transistor are electrically connected to each other;
3. The light emitting device according to item 1 or 2, wherein the second diffusion region of the first transistor and the second diffusion region of the second transistor are electrically isolated from each other.

(Item 12)
between the second diffusion region of the first transistor and the second diffusion region of the second transistor, the second diffusion region of the first transistor and the second diffusion region of the second transistor are connected to each other; 12. The light emitting device according to item 11, further comprising a separation structure extending from the second main surface toward the first main surface so as to electrically isolate the light emitting device.

(Item 13)
13. The light emitting device according to item 12, wherein the isolation structure is not disposed between the first diffusion region of the first transistor and the first diffusion region of the second transistor.

(Item 14)
The isolation structure is arranged between a first portion surrounding the first transistor and the second transistor and the first transistor and the second transistor in orthogonal projection onto the first main surface. a second part;
14. The light emitting device according to item 12 or 13, wherein the height of the first portion in the intersecting direction is higher than the height of the second portion in the intersecting direction.

(Item 15)
15. The light emitting device according to any one of items 1 to 14, wherein silicide is disposed on at least a portion of the gate electrode and the first diffusion region.

(Item 16)
The transistor is a third transistor, and further includes a fourth transistor,
The fourth transistor includes a gate electrode disposed along the first main surface, a third diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the first 16. The light emitting device according to any one of items 1 to 15, further comprising a fourth diffusion region functioning as the other of the source region and the drain region arranged on the main surface.

(Item 17)
The transistor further includes a fifth transistor disposed on the second substrate, with the transistor as a third transistor,
17. The light emitting device according to any one of items 1 to 16, wherein the fifth transistor is electrically connected to the first substrate.

(Item 18)
18. The light emitting device according to item 17, wherein the fifth transistor is connected to the third transistor.

(Item 19)
19. The light emitting device according to item 17 or 18, wherein the third transistor and the fifth transistor have different breakdown voltages.

(Item 20)
Any one of items 1 to 19, wherein the thickness of the third portion of the gate insulating film of the transistor is thicker than the thickness of the fourth portion between the third portion and the second main surface. The light emitting device according to item 1.

(Item 21)
According to any one of items 1 to 20, the gate insulating film of the transistor is provided so as to penetrate the first substrate from the first main surface to the second main surface. light emitting device.

(Item 22)
21. The light emitting device according to any one of items 1 to 20, wherein the gate insulating film of the transistor is disposed from the first main surface to the inside of the second diffusion region.

(Item 23)
A display device comprising the light emitting device according to any one of items 1 to 22 and an active element connected to the light emitting device.

(Item 24)
It has an optical section having a plurality of lenses, an image sensor that receives the light that has passed through the optical section, and a display section that displays an image,
A photoelectric conversion device characterized in that the display unit is a display unit that displays an image captured by the image sensor, and includes a light emitting device according to any one of items 1 to 22.

(Item 25)
comprising a casing provided with a display section, and a communication section provided in the casing and communicating with the outside;
An electronic device characterized in that the display section includes a light emitting device according to any one of items 1 to 22.

(Item 26)
A method for manufacturing a light emitting device, the method comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction,
preparing an SOI substrate as the first substrate;
a polishing step of polishing the SOI substrate,
A manufacturing method characterized in that the second main surface is a surface of the SOI substrate that has been polished in the polishing step.

(Item 27)
A method for manufacturing a light emitting device, the method comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction,
A step of preparing, as the first substrate, an epitaxial substrate including a first layer and a second layer epitaxially grown on the first layer and having an impurity concentration lower than that of the first layer,
A portion of the first layer functions as the first diffusion region,
A manufacturing method characterized in that a part of the second layer functions as a well region between the first diffusion region and the second diffusion region.

(Item 28)
The epitaxial substrate is an SOI substrate including a third layer and an insulating layer disposed between the third layer and the first layer,
The first layer is arranged between the second layer and the insulating layer,
further comprising a polishing step of polishing the epitaxial substrate,
28. The manufacturing method according to item 27, wherein in the polishing step, the epitaxial substrate is polished from the third layer side.

The invention is not limited to the embodiments described above, and various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, the following claims are hereby appended to disclose the scope of the invention.

10 to 70: Light emitting device, 101, 102: Main surface, 105, 151: Substrate, 110: Transistor, 111: Gate electrode, 112, 113: Diffusion region, 130: Light emitting element

Claims (28)

A light emitting device comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
A light emitting device, wherein the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction. The light emitting device according to claim 1, wherein the second diffusion region and the light emitting element are electrically connected. A plurality of the transistors are arranged on the first substrate,
The first diffusion regions of each of the plurality of transistors are electrically isolated from each other,
The light emitting device according to claim 1, wherein the second diffusion regions of each of the plurality of transistors are electrically isolated from each other. The first substrate further includes an isolation structure extending in the intersecting direction so as to electrically isolate the plurality of transistors from each other,
4. The light emitting device according to claim 3, wherein the isolation structure is arranged to surround the transistor in orthogonal projection onto the first principal surface. 5. The light emitting device according to claim 4, wherein the isolation structure includes a dielectric. 5. The light emitting device according to claim 4, wherein the separation structure is provided so as to penetrate the first substrate from the first main surface to the second main surface. A plurality of transistors including a first transistor and a second transistor adjacent to each other are arranged on the first substrate,
the first diffusion region of the first transistor and the first diffusion region of the second transistor are electrically isolated from each other;
2. The light emitting device according to claim 1, wherein the second diffusion region of the first transistor and the second diffusion region of the second transistor are electrically connected to each other. between the first diffusion region of the first transistor and the first diffusion region of the second transistor, the first diffusion region of the first transistor and the first diffusion region of the second transistor are connected to each other; 8. The light emitting device according to claim 7, further comprising an isolation structure extending from the first main surface toward the second main surface so as to be electrically isolated. 9. The light emitting device according to claim 8, wherein the isolation structure is not disposed between the second diffusion region of the first transistor and the second diffusion region of the second transistor. The isolation structure is arranged between a first portion surrounding the first transistor and the second transistor and the first transistor and the second transistor in orthogonal projection onto the first main surface. a second part;
9. The light emitting device according to claim 8, wherein the height of the first portion in the intersecting direction is higher than the height of the second portion in the intersecting direction. A plurality of transistors including a first transistor and a second transistor adjacent to each other are arranged on the first substrate,
A plurality of light emitting elements including a first light emitting element controlled by the first transistor and a second light emitting element controlled by the second transistor are arranged on the second main surface,
the first diffusion region of the first transistor and the first diffusion region of the second transistor are electrically connected to each other;
The light emitting device according to claim 1, wherein the second diffusion region of the first transistor and the second diffusion region of the second transistor are electrically isolated from each other. between the second diffusion region of the first transistor and the second diffusion region of the second transistor, the second diffusion region of the first transistor and the second diffusion region of the second transistor are connected to each other; The light emitting device according to claim 11, further comprising an isolation structure extending from the second main surface toward the first main surface so as to be electrically isolated. 13. The light emitting device according to claim 12, wherein the isolation structure is not disposed between the first diffusion region of the first transistor and the first diffusion region of the second transistor. The isolation structure is arranged between a first portion surrounding the first transistor and the second transistor and the first transistor and the second transistor in orthogonal projection onto the first main surface. a second part;
13. The light emitting device according to claim 12, wherein a height of the first portion in the intersecting direction is higher than a height of the second portion in the intersecting direction. The light emitting device according to claim 1, wherein silicide is disposed on at least a portion of the gate electrode and the first diffusion region. The transistor is a third transistor, and further includes a fourth transistor,
The fourth transistor includes a gate electrode disposed along the first main surface, a third diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the first The light emitting device according to claim 1, further comprising a fourth diffusion region functioning as the other of the source region and the drain region disposed on the main surface. The transistor further includes a fifth transistor disposed on the second substrate, with the transistor as a third transistor,
The light emitting device according to claim 1, wherein the fifth transistor is electrically connected to the first substrate. 18. The light emitting device according to claim 17, wherein the fifth transistor is connected to the third transistor. 18. The light emitting device according to claim 17, wherein the third transistor and the fifth transistor have different breakdown voltages. The light emitting device according to claim 1, wherein the third portion of the gate insulating film of the transistor is thicker than the fourth portion between the third portion and the second main surface. Device. The light emitting device according to claim 1, wherein the gate insulating film of the transistor is provided so as to penetrate the first substrate from the first main surface to the second main surface. 2. The light emitting device according to claim 1, wherein the gate insulating film of the transistor is disposed from the first main surface to the inside of the second diffusion region. A display device comprising the light emitting device according to claim 1 and an active element connected to the light emitting device. It has an optical section having a plurality of lenses, an image sensor that receives the light that has passed through the optical section, and a display section that displays an image,
23. A photoelectric conversion device, wherein the display section is a display section that displays an image captured by the image sensor, and includes the light emitting device according to any one of claims 1 to 22. comprising a casing provided with a display section, and a communication section provided in the casing and communicating with the outside;
23. An electronic device, wherein the display section includes the light emitting device according to claim 1. A method for manufacturing a light emitting device, the method comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction,
preparing an SOI substrate as the first substrate;
a polishing step of polishing the SOI substrate,
A manufacturing method characterized in that the second main surface is a surface of the SOI substrate that has been polished in the polishing step. A method for manufacturing a light emitting device, the method comprising: a first substrate having a first main surface and a second main surface on which a light emitting element is disposed; and a second substrate bonded to the first main surface.
A transistor for controlling the light emitting element is disposed on the first substrate,
The transistor includes a gate electrode extending in a direction intersecting the first main surface, a first diffusion region functioning as one of a source region and a drain region disposed on the first main surface, and the second main surface. a second diffusion region functioning as the other of the source region and the drain region disposed in the region;
the first diffusion region and the second diffusion region are arranged side by side in the intersecting direction,
A step of preparing, as the first substrate, an epitaxial substrate including a first layer and a second layer epitaxially grown on the first layer and having an impurity concentration lower than that of the first layer,
A portion of the first layer functions as the first diffusion region,
A manufacturing method characterized in that a part of the second layer functions as a well region between the first diffusion region and the second diffusion region. The epitaxial substrate is an SOI substrate including a third layer and an insulating layer disposed between the third layer and the first layer,
The first layer is arranged between the second layer and the insulating layer,
further comprising a polishing step of polishing the epitaxial substrate,
28. The manufacturing method according to claim 27, wherein in the polishing step, the epitaxial substrate is polished from the third layer side.

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