JP2023123546A - Ledの転写方法及びそれを用いた表示装置の製造方法 - Google Patents
Ledの転写方法及びそれを用いた表示装置の製造方法 Download PDFInfo
- Publication number
- JP2023123546A JP2023123546A JP2023094581A JP2023094581A JP2023123546A JP 2023123546 A JP2023123546 A JP 2023123546A JP 2023094581 A JP2023094581 A JP 2023094581A JP 2023094581 A JP2023094581 A JP 2023094581A JP 2023123546 A JP2023123546 A JP 2023123546A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- donor substrate
- wafer
- leds
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 116
- 238000012546 transfer Methods 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 423
- 230000007547 defect Effects 0.000 abstract description 9
- 238000000926 separation method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 201
- 239000010410 layer Substances 0.000 description 114
- 230000008569 process Effects 0.000 description 47
- 239000011347 resin Substances 0.000 description 30
- 229920005989 resin Polymers 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 20
- 239000000463 material Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 11
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 8
- 239000004698 Polyethylene Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- 239000012790 adhesive layer Substances 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 238000003795 desorption Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- -1 but not limited to Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229940102838 methylmethacrylate Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Led Device Packages (AREA)
Abstract
Description
表示装置は、コンピュータのモニタ及びTVだけではなく、個人携帯機器までその適用範囲が多様になっており、広い表示面積を有しながらも減少した体積及び重さを有する表示装置についての研究が進行している。
その他の実施例の具体的な事項は、詳細な説明及び図面に含まれている。
p型半導体層PL上にp電極PEが配置され、n型半導体層NL上にn電極NEが配置される。p電極PEは、p型半導体層PLと電気的に連結され得、n電極NEは、n型半導体層NLと電気的に連結され得る。
複数のLEDは、第2間隔D2に配置され得る。第2間隔D2は、複数のLEDのうち一つのLEDの中心から隣り合うLEDの中心までの間隔であってよい。そして、第2間隔D2は、表示パネルPNの複数の画素PXの間隔である第1間隔D1より小さな間隔であってよい。
複数のアライン突起332は、複数の第1アライン突起333及び複数の第2アライン突起334を含む。
ドナー基板300上に配置された複数のLEDと第2アラインキーAK2は、同じ工程で転写される。それゆえ、複数のLEDと第2アラインキーAK2の相対的な位置は、一定であり得る。それゆえ、複数のLEDとの相対的な位置が一定である第2アラインキーAK2を基準としてドナー基板300と表示パネルPNを整列する場合、定位置に複数のLEDを転写できる整列正確度が向上し得る。従って、ドナー基板300の複数のLEDを表示パネルPNに転写するとき、第2アラインキーAK2を基準にドナー基板300と表示パネルPNを整列できる。ただし、本明細書においては、第2アラインキーAK2を基準にドナー基板300と表示パネルPNを整列するものと説明したが、ドナー基板300と表示パネルPNを他の構成要素を基準に整列することもでき、これに制限されない。
一方、ドナー基板300として軟性基板の他に硬性基板を使用する場合もある。例えば、ドナー基板300をPDMSのような物質の代わりに硬い物質で構成し得る。ただし、ドナー基板300が硬性基板である場合、厚さのバラツキによってドナー基板300を大面積に構成しにくく、転写回数が増加する問題点がある。これに対して、ドナー基板300を軟性基板で構成する場合、ドナー基板300の面積を増加させることができ、LEDの破損を最小化することができる。そこで、ドナー基板300として軟性基板を使用することができる。
図5A及び図5Bは、比較例1に係るの転写方法を説明するための概略的な図である。図6A及び図6Bは、比較例2に係るの転写方法を説明するための概略的な図である。説明の便宜のために、図5B及び図6Bにおいては、ドナー基板300のベース層310及び樹脂層330だけを示した。
Claims (17)
- 複数のLEDが形成された硬性基板と軟性基板を合着するステップ;
前記複数のLEDを前記軟性基板に転写するステップ;及び
前記硬性基板と前記軟性基板を脱着するステップを含み、
前記硬性基板と前記軟性基板を脱着するステップは、前記硬性基板の一面を固定し、前記軟性基板の最外側部分のうち一部分を固定部材で固定した状態で前記硬性基板と前記軟性基板を離隔させるステップを含む、LEDの転写方法。 - 前記硬性基板と前記軟性基板を脱着するステップは、前記合着した状態の前記硬性基板と前記軟性基板をステージ上にローディングするステップをさらに含む、請求項1に記載のLEDの転写方法。
- 前記硬性基板と前記軟性基板を脱着するステップは、前記軟性基板の複数のエッジのうち一つのエッジを前記ステージに前記固定部材で固定するステップをさらに含み、
前記軟性基板の残りの部分は、前記ステージ上で遊動可能であるように構成される、請求項2に記載のLEDの転写方法。 - 前記硬性基板と前記軟性基板を脱着するステップは、前記軟性基板の複数のコーナーのうち少なくとも一つのコーナーを前記ステージに前記固定部材で固定するステップをさらに含み、
前記軟性基板の残りの部分は、前記ステージ上で遊動可能であるように構成される、請求項2に記載のLEDの転写方法。 - 前記硬性基板と前記軟性基板を脱着するステップは、前記硬性基板、前記軟性基板または前記硬性基板及び前記軟性基板を前記ステージの一面に垂直な方向に移動させるステップをさらに含む、請求項3または4に記載のLEDの転写方法。
- 前記硬性基板と前記軟性基板を脱着するステップは、前記硬性基板と前記軟性基板を線剥離するステップである、請求書5に記載のLEDの転写方法。
- 前記軟性基板上に配置された前記複数のLEDは、前記複数のLEDのうち一つのLEDを中心に放射形に配置され、
前記一つのLEDは、前記軟性基板の中心と離隔された、請求項1に記載のLEDの転写方法。 - ウエハとドナー基板を合着するステップ;
前記ウエハの複数のLEDを前記ドナー基板に転写するステップ;
前記ウエハと前記ドナー基板を脱着するステップ;
前記複数のLEDが配置された前記ドナー基板と表示パネルを合着するステップ;
前記ドナー基板の前記複数のLEDを前記表示パネルに転写するステップ;及び
前記表示パネルと前記ドナー基板を脱着するステップを含み、
前記ウエハと前記ドナー基板を脱着するステップは、ヘッドに前記ウエハの一面を固定し、ステージに前記ドナー基板の最外郭部分のうち一部分を固定した状態で前記ウエハと前記ドナー基板を脱着するステップを含む、表示装置の製造方法。 - 前記ウエハ及び前記表示パネルは、硬性基板であり、前記ドナー基板は、軟性基板である、請求項8に記載の表示装置の製造方法。
- 前記ウエハと前記ドナー基板を脱着するステップは、前記ドナー基板の最外郭部分のうち一つのエッジを前記ステージにグリッパーで固定するステップをさらに含む、請求項8に記載の表示装置の製造方法。
- 前記ウエハと前記ドナー基板を脱着するステップは、前記ドナー基板の最外郭部分のうち少なくとも一つ以上のコーナーを前記ステージにグリッパーで固定するステップをさらに含む、請求項8に記載の表示装置の製造方法。
- 前記ウエハと前記ドナー基板を脱着するステップは、前記ヘッドに前記ウエハの一面を真空吸着または固定部材で固定するステップをさらに含む、請求項8に記載の表示装置の製造方法。
- 前記ウエハと前記ドナー基板を脱着するステップは、前記ヘッド、前記ステージまたは前記ヘッド及び前記ステージをZ軸方向に移動させるステップをさらに含み、
前記ヘッド、前記ステージまたは前記ヘッド及び前記ステージを前記Z軸方向に移動させるとき、前記ドナー基板上の前記複数のLEDは、前記ウエハからライン単位に分離される、請求項8に記載の表示装置の製造方法。 - 前記ヘッド、前記ステージまたは前記ヘッド及び前記ステージを前記Z軸方向に移動させるとき、前記ドナー基板の少なくとも一部分は、前記ステージと離隔される、請求項13に記載の表示装置の製造方法。
- 前記ウエハは、
複数のLEDが形成されたアクティブ領域;及び
一つ以上のダムが形成された外郭領域を含み、
前記複数のLEDのうち前記アクティブ領域の最外郭に配置されたLEDと前記ダムとの間の間隔は、前記複数のLEDのうち一つのLEDの外郭から隣り合うLEDの外郭までの間隔以上である、請求項8に記載の表示装置の製造方法。 - 前記ドナー基板は、前記複数のLEDそれぞれが粘着するチップ突起を含み、
前記ドナー基板に転写された前記複数のLEDのうち一つのLEDは、前記チップ突起の中心に配置され、
前記ドナー基板に転写された前記複数のLEDのうち前記一つのLEDの一側に配置された他の一つのLEDは、前記チップ突起の中心から一側に偏って配置される、請求項8に記載の表示装置の製造方法。 - 前記ウエハは前記外郭領域に形成された複数のアラインキーを含み、かつ前記複数のアラインキーは前記ウエハと前記ドナー基板とを整列するために使用される第1アラインキー及び前記ドナー基板と前記表示パネルとを整列するために使用される第2アラインキーを含む、請求項15に記載の表示装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200166705A KR20220077601A (ko) | 2020-12-02 | 2020-12-02 | 발광 소자의 전사 방법 및 이를 이용한 표시 장치의 제조 방법 |
KR10-2020-0166705 | 2020-12-02 | ||
JP2021195228A JP7295205B2 (ja) | 2020-12-02 | 2021-12-01 | Ledの転写方法及びそれを用いた表示装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021195228A Division JP7295205B2 (ja) | 2020-12-02 | 2021-12-01 | Ledの転写方法及びそれを用いた表示装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2023123546A true JP2023123546A (ja) | 2023-09-05 |
Family
ID=81751797
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021195228A Active JP7295205B2 (ja) | 2020-12-02 | 2021-12-01 | Ledの転写方法及びそれを用いた表示装置の製造方法 |
JP2023094581A Pending JP2023123546A (ja) | 2020-12-02 | 2023-06-08 | Ledの転写方法及びそれを用いた表示装置の製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021195228A Active JP7295205B2 (ja) | 2020-12-02 | 2021-12-01 | Ledの転写方法及びそれを用いた表示装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US12074248B2 (ja) |
JP (2) | JP7295205B2 (ja) |
KR (1) | KR20220077601A (ja) |
CN (1) | CN114583018A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024039870A1 (en) * | 2022-08-19 | 2024-02-22 | Lumileds Llc | Suction cup device and method for removing sapphire substrate |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3217885B2 (ja) | 1993-01-14 | 2001-10-15 | 大日本印刷株式会社 | 転写装置における転写後の基板の剥離方法 |
JP4234269B2 (ja) | 1999-07-16 | 2009-03-04 | 浜松ホトニクス株式会社 | 半導体装置及びその製造方法 |
KR20020058523A (ko) | 2000-12-30 | 2002-07-12 | 박종섭 | 마스크 및 그를 이용한 웨이퍼 모서리의 노광 방법 |
KR20050063142A (ko) | 2003-12-22 | 2005-06-28 | 주식회사 하이닉스반도체 | 반도체 웨이퍼의 가장자리에 더미 패턴을 형성하는 반도체소자의 제조 방법 |
JP2009295853A (ja) | 2008-06-06 | 2009-12-17 | Sony Corp | 素子転写装置、素子転写方法及び表示装置の製造方法 |
KR200468950Y1 (ko) | 2011-08-02 | 2013-11-27 | (주)마스오카제작소 | 점착 패드 및 그를 포함하는 글래스 이송 장비 |
CN104380466B (zh) | 2012-05-30 | 2017-05-24 | 奥林巴斯株式会社 | 摄像装置的制造方法以及半导体装置的制造方法 |
TWI585028B (zh) | 2013-01-30 | 2017-06-01 | 斯克林集團公司 | 剝離裝置及剝離方法 |
US10755929B2 (en) * | 2016-02-16 | 2020-08-25 | Ev Group E. Thallner Gmbh | Method and device for bonding of substrates |
KR101754528B1 (ko) | 2016-03-23 | 2017-07-06 | 한국광기술원 | 건식 접착구조를 갖는 led 구조체 어레이의 전사체와 이를 이용한 led 구조체 어레이의 이송방법 및 led 구조체 |
JP2018060993A (ja) | 2016-09-29 | 2018-04-12 | 東レエンジニアリング株式会社 | 転写方法、実装方法、転写装置、及び実装装置 |
KR102651097B1 (ko) | 2016-10-28 | 2024-03-22 | 엘지디스플레이 주식회사 | 발광 다이오드 디스플레이 장치 |
KR20180071743A (ko) | 2016-12-20 | 2018-06-28 | 엘지디스플레이 주식회사 | 발광 다이오드 칩 및 이를 포함하는 발광 다이오드 디스플레이 장치 |
KR101956231B1 (ko) | 2017-11-20 | 2019-03-08 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
JP7223310B2 (ja) | 2018-07-23 | 2023-02-16 | 大日本印刷株式会社 | 保持部材、転写部材、転写部材の製造方法及び発光基板の製造方法 |
JP2020043209A (ja) | 2018-09-10 | 2020-03-19 | 国立大学法人東北大学 | マイクロledアレイの製造方法、及びマイクロledディスプレイの製造方法、並びにマイクロledアレイ、及びマイクロledディスプレイ |
WO2020059588A1 (ja) | 2018-09-19 | 2020-03-26 | 株式会社コムラテック | 素子の移載方法およびそれに用いる移載版 |
KR102030323B1 (ko) | 2018-11-23 | 2019-10-10 | 엘지디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
JP7146595B2 (ja) | 2018-11-27 | 2022-10-04 | 株式会社ジャパンディスプレイ | 表示パネル、表示パネルの製造方法、及び基板 |
CN118173573A (zh) | 2018-12-27 | 2024-06-11 | 乐金显示有限公司 | 显示装置 |
KR20220006052A (ko) | 2019-05-08 | 2022-01-14 | 니치아 카가쿠 고교 가부시키가이샤 | 화상 표시 장치의 제조 방법 및 화상 표시 장치 |
-
2020
- 2020-12-02 KR KR1020200166705A patent/KR20220077601A/ko active Search and Examination
-
2021
- 2021-11-17 CN CN202111363787.4A patent/CN114583018A/zh active Pending
- 2021-11-23 US US17/534,236 patent/US12074248B2/en active Active
- 2021-12-01 JP JP2021195228A patent/JP7295205B2/ja active Active
-
2023
- 2023-06-08 JP JP2023094581A patent/JP2023123546A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
KR20220077601A (ko) | 2022-06-09 |
JP2022088340A (ja) | 2022-06-14 |
US12074248B2 (en) | 2024-08-27 |
JP7295205B2 (ja) | 2023-06-20 |
CN114583018A (zh) | 2022-06-03 |
US20220173269A1 (en) | 2022-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3486945B1 (en) | Method of manufacturing a display device | |
KR20190067524A (ko) | 발광 소자 및 이를 이용한 표시 장치 | |
US11239215B2 (en) | Display device using semiconductor light emitting device and method for manufacturing the same | |
US20230352643A1 (en) | Display apparatus using semiconductor light-emitting device | |
US10325888B2 (en) | Manufacturing method of display | |
US20220399473A1 (en) | Method of manufacturing display device | |
KR20190051629A (ko) | 표시 장치 및 표시 장치 제조 방법 | |
KR20230027132A (ko) | 발광 소자 및 이를 이용한 표시 장치 | |
JP2023123546A (ja) | Ledの転写方法及びそれを用いた表示装置の製造方法 | |
KR101888857B1 (ko) | 발광 소자 및 이를 이용한 표시 장치 | |
US20220181381A1 (en) | Light emitting element and display device | |
KR20240040698A (ko) | 표시 장치 및 표시 장치 제조 방법 | |
KR20190067334A (ko) | 발광 소자 및 이를 이용한 표시 장치 | |
US20240213297A1 (en) | Display Device and Method of Manufacturing the Same | |
WO2023066013A1 (zh) | 一种显示装置 | |
US20240145656A1 (en) | Display device and method of manufacturing the same | |
US20240178359A1 (en) | Display device | |
KR20230103258A (ko) | Led 웨이퍼 및 표시 장치 | |
KR20240090766A (ko) | 반도체 발광소자를 포함하는 디스플레이 장치 및 이의 제조 방법 | |
JP2024095573A (ja) | 表示装置及び表示装置の製造方法 | |
KR20230100996A (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230622 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230622 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20240313 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20240319 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240619 |