JP2023080017A - プラズマエッチングの方法 - Google Patents

プラズマエッチングの方法 Download PDF

Info

Publication number
JP2023080017A
JP2023080017A JP2022171258A JP2022171258A JP2023080017A JP 2023080017 A JP2023080017 A JP 2023080017A JP 2022171258 A JP2022171258 A JP 2022171258A JP 2022171258 A JP2022171258 A JP 2022171258A JP 2023080017 A JP2023080017 A JP 2023080017A
Authority
JP
Japan
Prior art keywords
etching
chamber
plasma
flow rate
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022171258A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023080017A5 (https=
Inventor
アレックス ヒュー ウッド
Huw Wood Alex
リデル ケビン
Riddell Kevin
アシュラフ フマ
Ashraf Huma
ホプキンス ジャネット
Hopkins Janet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Publication of JP2023080017A publication Critical patent/JP2023080017A/ja
Publication of JP2023080017A5 publication Critical patent/JP2023080017A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
JP2022171258A 2021-11-29 2022-10-26 プラズマエッチングの方法 Pending JP2023080017A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB2117193.9A GB202117193D0 (en) 2021-11-29 2021-11-29 A method of plasma etching
GB2117193.9 2021-11-29

Publications (2)

Publication Number Publication Date
JP2023080017A true JP2023080017A (ja) 2023-06-08
JP2023080017A5 JP2023080017A5 (https=) 2025-05-30

Family

ID=80038579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022171258A Pending JP2023080017A (ja) 2021-11-29 2022-10-26 プラズマエッチングの方法

Country Status (7)

Country Link
US (1) US20230170188A1 (https=)
EP (1) EP4192220A1 (https=)
JP (1) JP2023080017A (https=)
KR (1) KR20230080304A (https=)
CN (1) CN116190222A (https=)
GB (1) GB202117193D0 (https=)
TW (1) TW202321505A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4199687B1 (en) * 2021-12-17 2024-04-10 SPTS Technologies Limited Plasma etching of additive-containing aln
GB202219567D0 (en) * 2022-12-22 2023-02-08 Spts Technologies Ltd Method of plasma etching
CN117276076B (zh) * 2023-11-09 2025-06-27 北京北方华创微电子装备有限公司 含Sc层的刻蚀方法、半导体器件及其制造方法及工艺设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209260A (ja) * 2001-11-07 2003-07-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008010611A (ja) * 2006-06-29 2008-01-17 Sony Corp 半導体装置の製造方法および半導体装置
JP2009055128A (ja) * 2007-08-23 2009-03-12 Nippon Dempa Kogyo Co Ltd 薄膜圧電共振器の製造方法及び薄膜圧電共振器
US20180130883A1 (en) * 2016-11-10 2018-05-10 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Scandium-Containing III-N Etch-Stop Layers for Selective Etching of III-Nitrides and Related Materials
US20200069890A1 (en) * 2018-08-30 2020-03-05 Analog Devices, Inc. Using piezoelectric electrodes as active surfaces for electroplating process

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003021002A1 (en) * 2001-08-29 2003-03-13 Tokyo Electron Limited Apparatus and method for plasma processing
KR20090086238A (ko) * 2006-11-10 2009-08-11 에이전시 포 사이언스, 테크놀로지 앤드 리서치 마이크로기계 구조 및 마이크로기계 구조 제조방법
CN102280375B (zh) * 2010-06-08 2013-10-16 中国科学院微电子研究所 一种先栅工艺中叠层金属栅结构的制备方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209260A (ja) * 2001-11-07 2003-07-25 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2008010611A (ja) * 2006-06-29 2008-01-17 Sony Corp 半導体装置の製造方法および半導体装置
JP2009055128A (ja) * 2007-08-23 2009-03-12 Nippon Dempa Kogyo Co Ltd 薄膜圧電共振器の製造方法及び薄膜圧電共振器
US20180130883A1 (en) * 2016-11-10 2018-05-10 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Scandium-Containing III-N Etch-Stop Layers for Selective Etching of III-Nitrides and Related Materials
US20200069890A1 (en) * 2018-08-30 2020-03-05 Analog Devices, Inc. Using piezoelectric electrodes as active surfaces for electroplating process

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
LOZZI, ANDREA ET AL.: "Al0.83Sc0.17N Contour-Mode Resonators With Electromechanical Coupling in Excess of 4.5%", IEEE TRANSACTION ON ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL., vol. 66, no. 1, JPN6026003464, 14 January 2019 (2019-01-14), pages 146 - 153, ISSN: 0005786797 *
PETRICH, R ET AL.: "Investigation of ScAlN for piezoelectric and ferroelectric applications", 2019 22ND EUROPEAN MICROELECTRONICS AND PACKAGING CONFERENCE & EXHIBITION, JPN6026003463, 9 January 2020 (2020-01-09), pages 1 - 5, ISSN: 0005786796 *
SHAO, SHUAI ET AL.: "High Figure-of-Merit Lamb Wave Resonators based on Al0.7Sc0.3N Thin Film", IEEE ELECTRON DEVICE LETTERS, vol. 42, no. 9, JPN6026003462, 26 August 2021 (2021-08-26), pages 1378 - 1381, ISSN: 0005786795 *

Also Published As

Publication number Publication date
GB202117193D0 (en) 2022-01-12
TW202321505A (zh) 2023-06-01
CN116190222A (zh) 2023-05-30
US20230170188A1 (en) 2023-06-01
KR20230080304A (ko) 2023-06-07
EP4192220A1 (en) 2023-06-07

Similar Documents

Publication Publication Date Title
JP2023080017A (ja) プラズマエッチングの方法
JP5238704B2 (ja) ハフニウム含有材料を乾式エッチングする方法およびシステム
TWI311782B (https=)
JP2008244479A (ja) 金属窒化物を乾式エッチングする方法及びシステム
JP2014528642A (ja) エッチング処理条件を回復させる乾式クリーニング方法
KR101679371B1 (ko) 드라이 에칭 방법
KR20200140388A (ko) 패터닝을 위한 고품질 c 막들의 펄스형 플라즈마(dc/rf) 증착
TW201705265A (zh) 蝕刻方法
TW511163B (en) Manufacturing method of semiconductor device
KR20160088816A (ko) 에칭 방법
KR20180094801A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
US10854430B2 (en) Plasma etching method
TW201724252A (zh) 蝕刻方法
JP5633928B2 (ja) 深溝ライナ除去方法
TWI423324B (zh) 相對於其他材料具有高選擇率之金屬氮化物的蝕刻方法
KR20160088819A (ko) 에칭 방법
EP4391023A1 (en) Method of plasma etching
CN109075068B (zh) 蚀刻方法
EP4704141A1 (en) Method of plasma etching
JPH0786249A (ja) ドライエッチング方法
JPH10135188A (ja) プラズマ処理方法およびプラズマ処理装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250522

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250522

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20260130

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20260203

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260414