JP2022517320A - 向上されたドレイン電流ドリフト及び/又は漏れ電流性能を有する高電子移動度トランジスタ - Google Patents
向上されたドレイン電流ドリフト及び/又は漏れ電流性能を有する高電子移動度トランジスタ Download PDFInfo
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- JP2022517320A JP2022517320A JP2021538969A JP2021538969A JP2022517320A JP 2022517320 A JP2022517320 A JP 2022517320A JP 2021538969 A JP2021538969 A JP 2021538969A JP 2021538969 A JP2021538969 A JP 2021538969A JP 2022517320 A JP2022517320 A JP 2022517320A
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Abstract
Description
Claims (37)
- 高電子移動度トランジスタであって、
チャンネル層と;
前記チャンネル層上のバリア層であって、前記バリア層は、前記チャンネル層に隣接する下側面と前記下側面の反対側の上側面とを有する、バリア層と;
前記バリア層の前記上側面上のソース接点と;
前記バリア層の前記上側面上のドレイン接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上のゲート接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上のパッシベーション層と
を備え、
前記バリア層の前記上側面に第1の凹部が設けられ、前記パッシベーション層は前記第1の凹部内にある、高電子移動度トランジスタ。 - 前記パッシベーション層は第2のパッシベーション層を備え、前記高電子移動度トランジスタは、前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上の第1のパッシベーション層を更に備え、前記第1のパッシベーション層及び前記第2のパッシベーション層の両方は前記バリア層に直接的に接触する、請求項1に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層は第1の材料を含み、前記第2のパッシベーション層は前記第1の材料とは異なる第2の材料を含む、請求項2に記載の高電子移動度トランジスタ。
- 前記第1の材料は、窒素に対するケイ素の第1の比率を有する第1の窒化ケイ素材料であり、前記第2の材料は、窒素に対するケイ素の第2の比率を有する第2の窒化ケイ素材料であり、窒素に対するケイ素の前記第1の比率は、窒素に対するケイ素の前記第2の比率よりも少なくとも10パーセンテージ・ポイントだけ大きい、請求項3に記載の高電子移動度トランジスタ。
- 前記第1の材料はアルミナであり、前記第2の材料は窒化ケイ素である、請求項3に記載の高電子移動度トランジスタ。
- 前記第1の凹部は前記ゲート接点の下にあり、前記第2のパッシベーション層は前記第1の凹部内にある、請求項2から5までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1の凹部は、前記ソース接点又は前記ドレイン接点のうちの1つに隣接する、請求項2から5までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記バリア層の前記上側面に第2の凹部を更に備え、前記第2のパッシベーション層は前記第1の凹部及び前記第2の凹部の両方の内部にあり、前記第1の凹部は前記ソース接点に隣接し、前記第2の凹部は前記ドレイン接点に隣接する、請求項2から7までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記バリア層の前記上側面に第3の凹部を更に備え、前記第2のパッシベーション層は前記第3の凹部内にあり、前記第3の凹部は前記ゲート接点の下にある、請求項2から8までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第2のパッシベーション層は前記第1のパッシベーション層を覆う、請求項2から9までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層は、前記ソース接点と前記ゲート接点との間にある前記バリア層の前記上側面の部分の第1のパーセンテージに直接的に接触し、前記ゲート接点と前記ドレイン接点との間にある前記バリア層の前記上側面の部分の第2のパーセンテージに直接的に接触し、前記第1のパーセンテージは前記第2のパーセンテージとは少なくとも10パーセンテージ・ポイントだけ異なる、請求項2から10までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第2のパーセンテージは前記第1のパーセンテージよりも少なくとも20パーセンテージ・ポイントだけ大きい、請求項11に記載の高電子移動度トランジスタ。
- 前記第2のパッシベーション層は、前記ソース接点と前記ゲート接点との間にある前記バリア層の前記上側面の前記部分の第3のパーセンテージに直接的に接触し、前記ゲート接点と前記ドレイン接点との間にある前記バリア層の前記上側面の前記部分の第4のパーセンテージに直接的に接触し、前記第3のパーセンテージは前記第4のパーセンテージとは少なくとも10パーセンテージ・ポイントだけ異なる、請求項2から12までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第3のパーセンテージは前記第4のパーセンテージを少なくとも50パーセンテージ・ポイントだけ上回る、請求項13に記載の高電子移動度トランジスタ。
- 前記第1の材料は電荷散逸材料である、請求項3から14までのいずれか一項に記載の高電子移動度トランジスタ。
- 高電子移動度トランジスタであって、
チャンネル層と;
前記チャンネル層上のバリア層であって、前記バリア層は、前記チャンネル層に隣接する下側面と前記下側面の反対側の上側面とを有する、バリア層と;
前記バリア層の前記上側面上のソース接点と;
前記バリア層の前記上側面上のドレイン接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上のゲート接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上の第1のパッシベーション層と
を備え、
前記第1のパッシベーション層は、前記ソース接点と前記ゲート接点との間にある前記バリア層の前記上側面の部分の第1のパーセンテージに直接的に接触し、前記ゲート接点と前記ドレイン接点との間にある前記バリア層の前記上側面の部分の第2のパーセンテージに直接的に接触し、前記第2のパーセンテージは前記第1のパーセンテージとは異なる、高電子移動度トランジスタ。 - 前記第2のパーセンテージは前記第1のパーセンテージを少なくとも10パーセンテージ・ポイントだけ上回る、請求項16に記載の高電子移動度トランジスタ。
- 前記第2のパーセンテージは前記第1のパーセンテージを少なくとも30パーセンテージ・ポイントだけ上回る、請求項16に記載の高電子移動度トランジスタ。
- 前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面に直接的に接触する第2のパッシベーション層を更に備え、前記第2のパッシベーション層は前記第1のパッシベーション層とは異なる材料を含む、請求項16から18までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層は電荷散逸材料を含む、請求項16から19までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層はケイ素リッチな窒化ケイ素又はアルミナを含む、請求項16から20までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第2のパッシベーション層は、前記ソース接点と前記ゲート接点との間にある前記バリア層の前記上側面の前記部分の第3のパーセンテージに直接的に接触し、前記ゲート接点と前記ドレイン接点との間にある前記バリア層の前記上側面の前記部分の第4のパーセンテージに直接的に接触し、前記第4のパーセンテージは前記第3のパーセンテージとは異なる、請求項16から21までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第3のパーセンテージは前記第4のパーセンテージを少なくとも30パーセンテージ・ポイントだけ上回る、請求項22に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層は電荷散逸材料を含む、請求項22に記載の高電子移動度トランジスタ。
- 前記バリア層は、その前記上側面に少なくとも1つの凹部を含み、前記第2のパッシベーション層は前記少なくとも1つの凹部内に蒸着される、請求項16から24までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記少なくとも1つの凹部は前記ゲート接点の下にある、請求項25に記載の高電子移動度トランジスタ。
- 高電子移動度トランジスタであって、
チャンネル層と;
前記チャンネル層上のバリア層であって、前記バリア層は、前記チャンネル層に隣接する下側面と前記下側面の反対側の上側面とを有する、バリア層と;
前記バリア層の前記上側面上のソース接点と;
前記バリア層の前記上側面上のドレイン接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面上のゲート接点と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面に直接的に接触する第1のパッシベーション層であって、前記第1のパッシベーション層は電荷散逸材料を含む、第1のパッシベーション層と;
前記ソース接点と前記ドレイン接点との間の前記バリア層の前記上側面に直接的に接触する第2のパッシベーション層であって、前記第2のパッシベーション層は前記第1のパッシベーション層とは異なる材料を含む、第2のパッシベーション層と
を備える、高電子移動度トランジスタ。 - 前記第2のパッシベーション層は前記第1のパッシベーション層の上側面上にもある、請求項27に記載の高電子移動度トランジスタ。
- 前記第2のパッシベーション層は電荷散逸材料でない、請求項27又は28に記載の高電子移動度トランジスタ。
- 前記電荷散逸材料はケイ素リッチな窒化ケイ素又はアルミナである、請求項27から29までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記バリア層の前記上側面に第1の凹部が設けられ、前記第2のパッシベーション層は前記第1の凹部内にある、請求項27から30までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1の凹部は前記ゲート接点の下にある、請求項31に記載の高電子移動度トランジスタ。
- 前記第1の凹部は、前記ソース接点又は前記ドレイン接点のうちの1つに隣接する、請求項31に記載の高電子移動度トランジスタ。
- 前記バリア層の前記上側面に第2の凹部を更に備え、前記第2のパッシベーション層は前記第2の凹部内にあり、前記第1の凹部は前記ソース接点に隣接し、前記第2の凹部は前記ドレイン接点に隣接する、請求項27から33までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記バリア層の前記上側面に第3の凹部を更に備え、前記第2のパッシベーション層は前記第3の凹部内にあり、前記第3の凹部は前記ゲート接点の下にある、請求項34に記載の高電子移動度トランジスタ。
- 前記第2のパッシベーション層は前記第1のパッシベーション層を覆う、請求項27から35までのいずれか一項に記載の高電子移動度トランジスタ。
- 前記第1のパッシベーション層は、前記ソース接点と前記ゲート接点との間にある前記バリア層の前記上側面の部分の第1のパーセンテージに直接的に接触し、前記ゲート接点と前記ドレイン接点との間にある前記バリア層の前記上側面の部分の第2のパーセンテージに直接的に接触し、前記第2のパーセンテージは前記第1のパーセンテージを少なくとも10パーセンテージ・ポイントだけ上回る、請求項27から36までのいずれか一項に記載の高電子移動度トランジスタ。
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