JP2022133933A - Temperature sensor, temperature detection device, temperature detection method, temperature detection program, and manufacturing method for temperature sensor - Google Patents

Abstract

To improve a spatial resolution in temperature detection.SOLUTION: A temperature detection device 1 includes a temperature sensor 2. The temperature sensor 2 includes a light-emitting material 24 emitting light by reception of excitation energy and having an emission spectrum changing depending on a temperature, and a base material 23 to which the light-emitting material 24 is introduced. When viewed from a detection direction where the temperature is detected, a region where the light-emitting material 24 is introduced in the base material 23 is configured as a plurality of light-emitting regions 25 which is disposed apart from each other. In addition, the temperature detection device 1 includes a light detection unit 31 that detects light from the light-emitting material 24, and a control unit 32 functioning as a temperature detection unit that detects the temperature on the basis of the detected light.SELECTED DRAWING: Figure 1

Description

The present invention relates to a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a method of manufacturing a temperature sensor that detect temperature using light emitted from an element upon receiving excitation energy.

Conventionally, using a temperature sensor composed of a chloride phosphor containing chloride as a matrix and erbium ions or thulium ions as an activator, the temperature sensor is excited by excitation light, and the fluorescence spectrum generated by the excitation of the temperature sensor is There has been proposed a temperature measuring device that detects , and calculates the temperature from the detected spectrum (see Patent Document 1). In manufacturing such a temperature sensor, as a method of introducing a light-emitting substance into a crystal, there is a vapor phase epitaxy method in which a light-emitting substance is introduced during crystal growth.

However, in the vapor phase growth method, since the light-emitting substance is evenly distributed in the crystal, the installation position of the light-emitting substance cannot be controlled. For this reason, in the background art, it is not possible to detect the temperature of a minute area by locally arranging a light-emitting substance, and there is a problem with spatial resolution in temperature detection.

Japanese Patent Application Laid-Open No. 2004-028629

SUMMARY OF THE INVENTION In view of the problems described above, an object of the present invention is to provide a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a temperature sensor manufacturing method that can improve the spatial resolution in temperature detection. do.

The present invention includes a luminescent substance that emits light when receiving excitation energy and whose luminescence changes with temperature; and a base material into which the luminescent substance is introduced, wherein the luminescent substance is introduced into the base material A temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a temperature sensor are configured as a plurality of light-emitting regions arranged at intervals when viewed from the detection direction for detecting temperature. The present invention is characterized by being a method for manufacturing a sensor.

According to the present invention, it is possible to provide a temperature sensor, a temperature detection device, a temperature detection method, a temperature detection program, and a temperature sensor manufacturing method that can improve the spatial resolution in temperature detection.

FIG. 2 is a block diagram showing the configuration of a temperature detection device; The figure which shows the structure of a sensor part. The figure which shows an example of the excitation method using excitation light. FIG. 4 is a diagram showing an example of an excitation method using current; The figure which shows an example of the excitation method using an electron beam. 4A and 4B are diagrams showing a part of an example of a method for manufacturing a sensor unit; FIG. 5 is a diagram subsequent to FIG. 4 showing a part of the example of the method for manufacturing the sensor unit; FIG. 6 is a diagram subsequent to FIG. 5 showing a part of the example of the method for manufacturing the sensor unit; Graph showing the emission spectrum of a certain luminescent material. 4 is a graph showing the relationship between the emission intensity ratio and temperature in a certain luminescent substance. 4 is a flowchart showing temperature detection processing; The figure which shows an example of a structure of the sensor part seen from the detection direction.

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a block diagram showing the configuration of the temperature detection device 1. As shown in FIG. FIG. 2 is a diagram showing the configuration of the sensor unit 22 of the first embodiment.

The temperature detection device 1 has a temperature sensor 2 that emits light, a light receiving section 3 that receives light from the temperature sensor 2 , and a light guide path 4 . The light guide path 4 is composed of an optical fiber or the like, connects the temperature sensor 2 and the light receiving section 3 and guides the light from the temperature sensor 2 to the light receiving section 3 .

The temperature sensor 2 has an excitation section 21 and a sensor section 22 . As shown in FIG. 2, the sensor section 22 has a base material 23 and a luminescent material 24 doped (introduced) at predetermined positions in the base material 23 .

The base material 23 is made of a material that does not emit light even if it receives excitation energy, or does not emit light in a predetermined wavelength band including the emission peak in the emission spectrum of the light-emitting substance 24 even if it emits light. For example, the base material 23 is made of semiconductor material, ceramic material, metal material, wood, or the like. The base material 23 preferably has a thermal conductivity of 0.25 W/(cm K) (300 K) or more, more preferably 0.5 W/(cm K) (300 K) or more. 8 W/(cm·K) (300K) or more is preferable. The thickness of the base material 23 (thickness from the front surface to the back surface where the light-emitting material 24 is provided) is determined from the viewpoint of improving the spatial resolution in temperature detection, reducing the heat capacity of the sensor section 22, and making the sensor section 22 as small as possible. , preferably as thin as possible. Specifically, the thickness of the light-emitting substance-added semiconductor 23 is 500 nm or less, preferably 50 nm or less, and more preferably 1 nm to 10 nm. As a result, the heat on the back side can be quickly and sufficiently transferred to the light-emitting material 24 on the front side, and the temperature on the back side can be appropriately measured.

When a semiconductor material is used as the base material 23, for example, gallium nitride, gallium arsenide, aluminum gallium arsenide, indium gallium arsenide, indium phosphide, silicon germanium, silicon, silicon carbide, aluminum nitride, aluminum gallium nitride, Zinc oxide, indium nitride, indium gallium nitride, boron nitride, diamond, and the like can be used. In particular, it is preferable to use gallium nitride, aluminum nitride, or aluminum gallium nitride as the base material of the luminescent material-added semiconductor 23 from the viewpoint of ease of light emission of the luminescent material 24 introduced into the base material. When current is used as the excitation energy for the base material 23 (excitation of the light-emitting substance 24 by current injection), the sensor unit 22 includes a vertical pn junction diode, a vertical Schottky barrier diode, a horizontal pn junction diode, a horizontal shot It is configured as a key barrier diode, a high mobility field effect transistor (High Electron Mobility Transistor: HEMT), or the like.

The light-emitting substance 24 is composed of an element that emits light upon receiving excitation energy and whose light emission changes with temperature. That is, the emission spectrum of the luminescent material 24 changes with temperature.

For example, the light emitting material 24 is a rare earth element and is one or more selected from praseodymium, neodymium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, and ytterbium.

FIG. 3A is a diagram showing an example of an excitation method using excitation light. FIG. 3B is a diagram showing an example of an excitation method using current. FIG. 3C is a diagram showing an example of an excitation method using an electron beam.

The excitation unit 21 functions as excitation energy applying means for applying excitation energy to the sensor unit 22 (light-emitting substance 24 ), and excites the light-emitting substance 24 . Methods for imparting excitation energy to the light-emitting substance 24 include a method using excitation light (photoluminescence), a method using current injection (electroluminescence), and a method involving electron collision (cathodeluminescence).

As shown in FIG. 3A, in photoluminescence, a luminescent material 24 is irradiated with excitation light. For example, the luminescent substance 24 can be directly excited by irradiating the luminescent substance 24 with resonance excitation light corresponding to the resonance excitation condition of the luminescent substance 24 as excitation light. Further, when the base material 23 is a semiconductor material, light having a predetermined energy is irradiated as excitation light to the light-emitting substance 24 and the base material 23 around it to cause electrons and positive electrons in the base material 23 (semiconductor material). The light emitting material 24 can be indirectly excited (indirect excitation) by recombination energy of hole pairs or collision of hot carriers. When there are multiple resonance excitation conditions for the light-emitting substance 24, multiple types of resonance excitation light may be used as the excitation light. Moreover, when the base material 23 is a semiconductor material, the light to be irradiated is preferably light having energy exceeding the bandgap of the base material 23 (for example, ultraviolet light). When photoluminescence is used, the excitation unit 21 has a light source for irradiating excitation light and functions as an excitation light irradiation unit.

As shown in FIG. 3B, in electroluminescence, a base material 23 is made of a semiconductor material, and a pair of electrodes is provided on the surface of the base material 23 . Then, when a predetermined voltage (forward bias) is applied to the electrodes, current flows in the base material 23 . At this time, recombination energy of electron-hole pairs is generated in the base material 23 by the current flowing in the base material 23 . Therefore, the luminescent material 24 is excited by indirect excitation, similar to photoluminescence by ultraviolet light. When using electroluminescence, the excitation unit 21 is connected to a power source such as a commercial power supply or a battery, and functions as a voltage application unit that applies a predetermined voltage (voltage for temperature detection) to the sensor unit 22 .

As shown in FIG. 3C, in cathodoluminescence, the luminescent material 24 is irradiated with an electron beam (electron beam) accelerated to several kV to several tens of kV. In this case, the light-emitting substance 24 can be directly excited by collision of electrons, or if the base material 23 is a semiconductor material, the light-emitting substance 24 can be excited by recombination energy of electron-hole pairs or collision of hot carriers. Indirect excitation is also possible. When cathodoluminescence is used, the excitation unit 21 has an electron gun or the like and functions as an electron beam irradiation unit for irradiating an electron beam.

The minimum temperature-detectable range (spatial resolution) of photoluminescence and electroluminescence is defined by the resolution of the optical system (light-receiving section 3 and light guide 4) that detects the light emitted from the light-emitting substance 24. FIG. The resolution of general-purpose optical systems in this field is about 200 nm, depending on the excitation light wavelength and the emission wavelength of a luminescent substance, and is about 50 nm if a super-resolution microscope or the like is used.

The spatial resolution of temperature detection in cathodoluminescence is defined by factors such as the outer diameter of the electron beam and the spatial spread of the energy imparted by the electron beam. That is, it is defined by the size of the smallest region excited in cathodoluminescence. The size of the smallest region excited in cathodoluminescence is of the order of 10 nm.

Returning to FIG. 2, the sensor unit 22 includes a plurality of regions (light-emitting regions) 25 into which the light-emitting substance 24 is introduced and arranged at intervals from each other when viewed from the detection direction for detecting temperature; and a region (non-light-emitting region) 26 into which the light-emitting substance 24 is not introduced. In this embodiment, when the sensor section 22 is viewed from the detection direction, all areas other than the light emitting area 25 are non-light emitting areas 26 .

The shape of the light emitting region 25 when viewed from the detection direction is not particularly limited, and may be rectangular, circular, or the like. However, the shape of the light emitting region 25 when viewed from the detection direction is preferably an isotropic shape such as a perfect circle or a regular polygon.

In addition, the size of the light emitting region 25 when viewed from the detection direction may be smaller than 200 nm×200 nm or 200 nm in diameter, preferably 50 nm×50 nm or 50 nm in diameter, and more preferably 10 nm×10 nm or 10 nm in diameter. Any of the following is acceptable.

As described above, the spatial resolution (observation area) of temperature detection by cathodoluminescence is about 10 nm. Therefore, when cathodoluminescence is used, even if the size of the light-emitting region 25 is about 10 nm×10 nm or the diameter of the light-emitting region 25 is about 10 nm, one light-emitting region 25 can be detected individually.

Regarding the ease of light detection, if the light emitting area is larger than the observation area, it is determined by the number of light emitting substances in the observation area (observation area volume x light emitting substance concentration), and if the light emitting area is smaller than the observation area , is determined by the number of light-emitting substances in the light-emitting region (light-emitting region volume×light-emitting substance concentration).

Furthermore, from the viewpoint of spatial resolution, the distance between adjacent light emitting regions 25 should be set as small as possible according to the minimum size of the observation region for each excitation method. For example, it can be 50 nm or more for photoluminescence and electroluminescence, and 10 nm or more for cathodoluminescence. By doing so, the distance between the light emitting regions can be shortened as much as possible according to the minimum observation region for each excitation method, and as a result the spatial resolution can be improved. If the distance between the light emitting regions 25 is reduced to increase the number of the light emitting regions 25 too much, the ion implantation damage becomes large and the repair by heat treatment becomes difficult. Therefore, when the distance between the light emitting regions 25 is set small in order to suppress the deterioration of the performance of the temperature sensor 2, that is, as the distance between the light emitting regions 25 becomes smaller, the amount of the light emitting substance is reduced as much as possible. Injection is preferred. Since non-light-emitting regions 26 exist between adjacent light-emitting regions 25 , the distance between the plurality of light-emitting regions 25 also means the size (width dimension) of the non-light-emitting regions 26 .

As described above, the spatial resolution of temperature detection by cathodoluminescence is about 10 nm. Therefore, by using cathodoluminescence, if the distance between adjacent light emitting regions 25 is 10 nm or more, one light emitting region 25 can be excited individually (distinguished from other light emitting regions 25). That is, one light emitting region 25 can be individually detected. Moreover, if the distance between adjacent light emitting regions 25 is 200 nm or more, each light emitting region 25 can be detected individually even by photoluminescence and electroluminescence.

The concentration of the light-emitting substance 24 introduced in the light-emitting region 25 is within the range of 5×10 ¹³ /cm ³ to 1×10 ²² /cm ³ , preferably 5×10 ¹⁶ /cm ³ to 4×10 It is within the range of ²¹ pieces/cm ³ .

The concentration of 5×10 ¹³ /cm ³ is a concentration at which approximately one light-emitting substance 24 exists in a region of 200 nm×200 nm×500 nm, and the concentration of 5×10 ¹⁶ /cm ³ is equivalent to 200 nm×200 nm×500 nm. The concentration is such that about 1000 light-emitting substances 24 are present in an area of 200 nm×500 nm.

For example, the emission intensity of one praseodymium is about 100,000 photons per second. of light can be detected. Therefore, in principle, detectable light can be obtained at a concentration of 5×10 ¹³ /cm ³ or more. Moreover, if the concentration is 5×10 ¹⁶ /cm ³ or more, the light from the temperature sensor 2 can be detected more reliably.

A concentration of 1×10 ²² /cm ³ corresponds to an atomic concentration of approximately 10%, and a concentration of 4×10 ²¹ /cm ³ corresponds to an atomic concentration of approximately 4%. Since the maximum emission intensity of the rare earth element is obtained when the atomic concentration is around 4%, it is most preferable to set the concentration of the light-emitting substance 24 introduced in the light-emitting region 25 to 4×10 ²¹ /cm ³ . .

4A and 4B are diagrams showing a part of the manufacturing method of the sensor section 22. FIG. FIG. 5 shows a part of the manufacturing method of the sensor section 22 and is a diagram subsequent to FIG. FIG. 6 shows a part of the manufacturing method of the sensor section 22 and is a diagram subsequent to FIG.

An ion implantation method can be used as a method for manufacturing the sensor section 22 having the configuration described above. A method of manufacturing the sensor unit 22 in which the base material 23 is gallium nitride and the light-emitting material 24 is praseodymium will be described below.

As shown in FIG. 4, first, a resist film 40 made of a photosensitive resin or the like is formed on the surface of the base material 23 (resist film forming step). The resist film 40 is formed on at least a portion of the surface of the base material 23 facing the detection direction (the light guide path 4 or the light receiving portion 3).

Next, by electron beam lithography, a plurality of through holes 41 corresponding to the plurality of light emitting regions 25 are formed in the resist film 40 (through hole forming step). The size of the through hole 41 corresponds to the size of the light emitting region 25 described above.

Next, as shown in FIG. 5, ions of a light-emitting material 24 are implanted into the base material 23 through the through holes 41 (ion implantation step). The implantation concentration when ion-implanting the light-emitting substance 24 into the base material 23 corresponds to the introduction concentration of the light-emitting substance 24 in the light-emitting region 25 . However, at this stage, the light-emitting substance 24 injected into the base material 23 is not ionized (activated), so that it does not emit light even if it receives excitation energy.

Subsequently, the resist film 40 is removed (resist film removing step), and the base material 23 into which the light emitting substance 24 is implanted is heat treated (high temperature treatment) to ionize (oxidize) the light emitting substance 24 (heat treatment step). The processing temperature in the heat treatment step is 500.degree. C. to 1650.degree. Note that the higher the temperature, the more efficiently the light-emitting substance 24 can be ionized. On the other hand, if the treatment temperature is too high, there is a problem that the crystal structure of the base material 23 collapses. As an example of a technique related to heat treatment for recovering such a crystal structure, a technique of subjecting gallium nitride to high temperature (around 1550° C.) and high pressure in a nitrogen gas atmosphere is disclosed in reference 1 (S. Porowski et al. , J. Phys: Condens. Matter 14 (2002) 11097-11110).

Therefore, as shown in FIG. 6, after forming a heat treatment protective film 42 covering the base material 23, the heat treatment may be performed. In this case, after removing the resist film 40, a heat treatment protective film 42 covering the base material 23 is formed (protective film forming step), and after the base material 23 with the heat treatment protective film 42 formed thereon is heat treated, the heat treatment protective film is formed. 42 may be removed (protective film removing step). The heat treatment protection film 42 is composed of silicide nitride (SiN), silicon dioxide (SiO ₂ ), aluminum nitride (AlN), or the like. An example of a heat treatment method using a heat treatment protective film is disclosed in Reference 2 (K. Lorenz, et al., Appl. Phys. Lett. 85 (2004) 2712-2714).

FIG. 7 is an emission spectrum of trivalent praseodymium, which is a graph showing an emission spectrum at 22.5°C and an emission spectrum at 50.7°C. FIG. 8 is a graph showing the relationship between the emission intensity ratio and temperature in trivalent praseodymium.

Some of the luminescent substances 24 have two wavelength bands (emission peaks) in which the emission intensity is high in the emission spectrum. For example, trivalent praseodymium and the like have two emission peaks. As shown in FIG. 7, the emission spectrum of trivalent praseodymium has a first emission peak (first peak) near 650 nm and a second emission peak (second peak) near 652 nm. do. In this embodiment, the wavelength band of 649 nm or more and less than 651 nm (first wavelength band) is defined as the first peak, and the wavelength band of 651 nm or more and less than 653 nm (second wavelength band) is defined as the second peak.

Both the first peak and the second peak have higher emission intensity when the temperature is lower (22.5° C.) than when the temperature is higher (50.7° C.). However, between the first peak and the second peak, there is a difference in the amount of change (rate of change) in emission intensity due to temperature change. That is, the ratio (emission intensity ratio) between the emission intensity at the first peak (first emission intensity) and the emission intensity at the second peak (second emission intensity) changes according to the temperature.

Taking praseodymium as an example, as shown in FIG. 8, the lower the temperature, the smaller the emission intensity ratio, and the higher the temperature, the higher the emission intensity ratio. In this embodiment, the case where the light-emitting substance 24 is praseodymium has been described as an example. It is the same with other rare earth elements that the emission intensity ratio increases as the temperature rises.

For example, although not shown, the emission spectrum of neodymium has a first peak near 865 nm and a second peak near 885 nm. In addition, the emission spectrum of erbium has a first peak near 525 nm and a second peak near 550 nm. Furthermore, when neodymium and ytterbium are co-doped, there is a first peak near 950 nm and a second peak near 1050 nm. In addition, for other rare earth elements not exemplified here, the emission spectrum is obtained in advance by experiment or the like, and by setting the first peak and the second peak, the emission intensity ratio of the two peaks and the temperature It is thought that it is possible to clarify the relationship between

Returning to FIG. 1 , the light receiver 3 has a light detector 31 and a controller 32 . The light detection section 31 is for detecting light from the sensor section 22 (light-emitting substance 24 ), and has a spectroscopic section 33 , a first photodetector 34 and a second photodetector 35 . The spectroscopic unit 33 splits the light from the sensor unit 22 (light-emitting material 24) into light in a first wavelength band corresponding to the first peak and light in a second wavelength band corresponding to the second peak. It is for spectroscopy. The configuration of the spectroscopic section 33 is not particularly limited, and a beam splitter, a dichroic mirror, or the like may be used, or a combination of an optical element such as a mirror, an etalon filter, and a bandpass filter may be used. Of the light split by the spectroscopic section 33 , light in the first wavelength band enters the first photodetector 34 , and light in the second wavelength band enters the second photodetector 35 .

The first photodetector 34 and the second photodetector 35 are for outputting a signal corresponding to the intensity of the incident light to the controller 32 . The configurations of the first photodetector 34 and the second photodetector 35 are not particularly limited, and photodiodes or the like can be used. Also, the first photodetector 34 and the second photodetector 35 may be composed of single photon detectors capable of detecting single photons.

The control unit 32 has a CPU (central processing unit) and a storage unit (memory) that stores various data. This control unit 32 executes at least temperature detection processing. That is, the control unit 32 functions as a temperature detection unit that detects light from the light-emitting material 24 of the sensor unit 22 based on the signal output from the light detection unit 31 and detects (measures) temperature based on the detected light. Function. Note that the control unit 32 may function as a main control unit of the temperature detection device 1. In this case, the control unit 32 transmits a control signal to each part of the temperature detection device 1 such as the excitation unit 21 to control the temperature. Detecting device 1 is caused to perform various operations.

The temperature detection device 1 configured as described above uses the relationship between the light emission intensity ratio of the two peaks of the light-emitting substance 24 and the temperature to execute temperature detection processing for detecting the temperature at the position where the light-emitting substance 24 is installed. do. In executing the temperature detection process, a temperature detection condition is created in advance based on the relationship between the luminescence intensity ratio of the two peaks of the light-emitting substance 24 to be used and the temperature. is stored in the storage unit of For example, the luminous intensity ratio of two peaks at various temperatures is obtained by experiments, etc., and an approximation formula representing the relationship between the luminous intensity ratio and temperature based on the experimental results, or an approximation for converting the luminous intensity ratio to temperature Table data or the like is created as temperature detection conditions and stored in the storage section of the control section 32 .

FIG. 9 is a flow chart showing temperature detection processing executed by the control unit 32. As shown in FIG. First, the excitation unit 21 is controlled to apply excitation energy to the sensor unit 22 (electrode) (step S1). When excitation energy is applied to the sensor section 22 , the light-emitting substance 24 emits light, and the light from the light-emitting substance 24 passes through the light guide 4 and enters the light detection section 31 . The emission spectrum of the light from the light-emitting substance 24 at this time is the emission spectrum of the light-emitting substance 24 at the current temperature. In this embodiment, the light incident on the photodetector 31 is incident on the first photodetector 34 and the second photodetector 35 by the spectroscopic unit 33. light in the second wavelength band.

Then, the first photodetector 34 outputs a signal corresponding to the first emission intensity, which is the intensity of the light in the first wavelength band. is detected (obtained) (step S2). Further, the second photodetector 35 outputs a signal corresponding to the second emission intensity, which is the intensity of the light in the second wavelength band. (step S3).

Subsequently, the emission intensity ratio between the first emission intensity and the second emission intensity is calculated (step S4), and the temperature at the installation position of the light-emitting substance 24 is detected from the emission intensity ratio according to the temperature detection conditions (step S5).

In this manner, in this embodiment, the temperature of each light emitting region 25 (light emitting substance 24) can be individually detected selectively on a nanoscale (nanometer order). That is, temperature can be detected on the nanoscale. Therefore, it is possible to improve the spatial resolution in the temperature detection process. Further, since the temperature is measured based on the emission spectrum, if the sensor unit 22 is brought into contact with the temperature measurement object, there is no need to bring other objects into contact with the temperature measurement timing. The temperature can be measured while preventing temperature change due to contact with an object other than 22 .

Furthermore, as a conventional technique, there is a technique of using silicon vacancies in silicon carbide as a quantum sensor such as a magnetic sensor. In such prior art, the applicable material was only silicon carbide, and other materials could not be applied. On the other hand, the present embodiment has the advantage that there are fewer restrictions on the material constituting the sensor section 22 than in the above-described prior art.

In addition, in order to measure the temperature by the emission spectrum at the current temperature of the light-emitting substance 24, the ambient temperature of the part where the sensor section 22 containing the light-emitting substance 24 is arranged, or the temperature of the base material 23 of the sensor section 22 is measured. For example, it is possible to measure the temperature of an object with which the back surface is in contact. For example, the temperature of the object on which the back surface of the base material 23 of the sensor unit 22 is placed is heat-transferred from the base material 23 placed in contact with the light-emitting substance 24 . Therefore, the temperature of the object with which the base material 23 is in contact can be measured from the luminescence of the luminescent material 24 .

As a preferred example of the combination of the type of the base material 23 and the type of the luminescent material 24, the base material 23 can be gallium nitride and the luminescent material 24 can be praseodymium, particularly trivalent praseodymium. With this combination, praseodymium easily emits light, so there is an advantage that light can be easily detected. In addition, by using gallium nitride as the base material 23, it is possible to incorporate it into an electronic device, particularly a semiconductor device. It also becomes possible to configure the sensor 2 . In this way, it is possible to locally detect the temperature at an arbitrary position on the electronic device, or to detect the temperature distribution in the electronic device by detecting the temperatures at a plurality of positions on the electronic device. .

Moreover, some of the light-emitting substances 24 change the wavelength at which the emission peak appears according to the temperature change. For example, in the emission spectrum of neodymium, the emission peak appears around 863 nm, the wavelength of the emission peak becomes shorter (shorter wavelength) as the temperature decreases, and the wavelength of the emission peak becomes longer (longer wavelength) as the temperature rises. do). That is, it can be said that there is a relationship between the length of the wavelength at which the emission peak appears and the temperature. Using the relationship between the length of the wavelength at which the emission peak appears and the temperature, the emission spectrum of the light-emitting substance 24 can be detected, and the temperature can be detected according to the length of the wavelength of the emission peak in the emission spectrum. . In this case, the wavelength at the reference temperature may be set as the reference wavelength, and the temperature may be detected according to the difference (Δλ) from the reference wavelength.

Thus, when utilizing the relationship between the length of the wavelength at which the emission peak appears and the temperature, there is no need to disperse the light from the light-emitting substance 24 . Therefore, the photodetector 36 only needs to have one photodetector 37 .

FIG. 10 is a diagram showing an example of the configuration of the sensor section 22 viewed from the detection direction. As shown in FIG. 10, a plurality of light-emitting regions 25 (light-emitting substances 24) may be arranged in the sensor section 22, and a temperature detection object such as a living cell may be arranged on the surface of the base material 23. FIG. In this way, by individually detecting the temperature of each light emitting region 25, the temperature distribution in the temperature detection target can be detected on a nanoscale.

The present invention is not limited to this embodiment, and various other embodiments are possible. Also, the specific configurations and the like given in the above-described embodiments are examples, and can be changed as appropriate according to actual products.

Further, the present invention provides not only a temperature detection device and a temperature sensor, but also a method, program, and program for detecting light from a light-emitting substance using the temperature sensor and detecting temperature based on the detected light. It can also be provided as a storage medium storing , and can also be provided as a method of manufacturing a temperature sensor using an ion implantation method.

INDUSTRIAL APPLICABILITY The present invention can be used in industries that detect temperature using the light of elements that emit light upon receiving excitation energy.

DESCRIPTION OF SYMBOLS 1... Temperature detection device 2... Temperature sensor 3... Light receiving part 21... Excitation part 22... Sensor part 23... Base material 24... Light emitting material 25... Light emitting area 31... Light detection part 32... Control part (temperature detection part)
40... Resist film 41... Through hole

Claims (7)

a light-emitting substance that emits light upon receiving excitation energy and whose light emission changes with temperature;
A base material into which the luminescent substance is introduced,
A temperature sensor according to claim 1, wherein a region into which the luminous substance is introduced into the base material is configured as a plurality of luminous regions spaced apart from each other when viewed from a detection direction for detecting temperature. 2. The temperature sensor according to claim 1, wherein said light-emitting substance is introduced into said base material in an ionized state. each size of the plurality of light-emitting regions is 10 nm × 10 nm or more when viewed from the detection direction;
3. The temperature sensor according to claim 1, wherein the distance between the plurality of light emitting regions is 10 nm or more. a temperature sensor according to any one of claims 1 to 3;
excitation energy imparting means for imparting excitation energy to the light-emitting substance of the temperature sensor;
a photodetector that detects light from the luminescent material;
A temperature detection device comprising a temperature detection unit that detects temperature based on the detected light. A light-emitting substance that emits light when receiving excitation energy and whose light emission changes depending on temperature; Using a temperature sensor configured as a plurality of light emitting regions arranged at intervals when viewed from the detection direction for detecting temperature,
detecting light from the luminescent material;
A temperature detection method for detecting temperature based on the detected light. A light-emitting substance that emits light when receiving excitation energy and whose light emission changes depending on temperature; A computer of a temperature detection device configured as a plurality of light emitting regions arranged at intervals when viewed from a detection direction for detecting temperature,
a photodetector that detects light from the luminescent material;
A temperature detection program that functions as a temperature detection unit that detects temperature based on the detected light. A light-emitting substance that emits light when receiving excitation energy and whose light emission changes depending on temperature; A method for manufacturing a temperature sensor configured as a plurality of light-emitting regions spaced apart from each other when viewed from a detection direction for detecting temperature,
forming a resist film on the surface of the base material into which the light-emitting substance has been introduced;
forming a through hole corresponding to the light emitting region in the resist film;
ion-implanting the light-emitting substance into the base material through the through-hole;
removing the resist film;
forming a heat treatment protective film covering the base material into which the light-emitting substance is injected;
heat-treating the base material on which the heat-treatment protective film is formed;
A method of manufacturing a temperature sensor, wherein the heat treatment protective film is removed after the heat treatment.

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