JP2022104788A5 - - Google Patents

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Publication number
JP2022104788A5
JP2022104788A5 JP2021169270A JP2021169270A JP2022104788A5 JP 2022104788 A5 JP2022104788 A5 JP 2022104788A5 JP 2021169270 A JP2021169270 A JP 2021169270A JP 2021169270 A JP2021169270 A JP 2021169270A JP 2022104788 A5 JP2022104788 A5 JP 2022104788A5
Authority
JP
Japan
Prior art keywords
ground
ground terminal
pad
terminal
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021169270A
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English (en)
Japanese (ja)
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JP2022104788A (ja
Filing date
Publication date
Priority claimed from US17/136,304 external-priority patent/US11842957B2/en
Application filed filed Critical
Publication of JP2022104788A publication Critical patent/JP2022104788A/ja
Publication of JP2022104788A5 publication Critical patent/JP2022104788A5/ja
Pending legal-status Critical Current

Links

JP2021169270A 2020-12-29 2021-10-15 グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム Pending JP2022104788A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/136,304 US11842957B2 (en) 2020-12-29 2020-12-29 Amplifier modules and systems with ground terminals adjacent to power amplifier die
US17/136,304 2020-12-29

Publications (2)

Publication Number Publication Date
JP2022104788A JP2022104788A (ja) 2022-07-11
JP2022104788A5 true JP2022104788A5 (https=) 2024-10-10

Family

ID=78770370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021169270A Pending JP2022104788A (ja) 2020-12-29 2021-10-15 グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム

Country Status (4)

Country Link
US (1) US11842957B2 (https=)
EP (1) EP4024447B1 (https=)
JP (1) JP2022104788A (https=)
CN (1) CN114696759A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020126921A (ja) * 2019-02-04 2020-08-20 株式会社村田製作所 高周波モジュールおよび通信装置
JP7538097B2 (ja) * 2021-09-13 2024-08-21 株式会社東芝 半導体装置
US20240038645A1 (en) * 2022-07-26 2024-02-01 Avago Technologies International Sales Pte. Limited Semiconductor Package Interconnection Structure
US12347740B2 (en) * 2022-12-06 2025-07-01 Nxp Usa, Inc. Power amplifier module with transistor dies for multiple amplifier stages on a same heat dissipation structure
US20240203912A1 (en) * 2022-12-19 2024-06-20 Nxp Usa, Inc. Amplifier modules and systems with ground terminals adjacent to power amplifier die
US12588509B2 (en) * 2023-02-28 2026-03-24 Nxp Usa, Inc. Terminal interposers with mold flow channels, circuit modules including such terminal interposers, and associated methods

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3148718B2 (ja) * 1998-08-28 2001-03-26 インダストリアル テクノロジー リサーチ インスティチュート 熱的及び電気的に増強された半導体パッケージ
US6875921B1 (en) * 2003-10-31 2005-04-05 Xilinx, Inc. Capacitive interposer
US7053469B2 (en) * 2004-03-30 2006-05-30 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package and manufacturing method thereof
US7755186B2 (en) 2007-12-31 2010-07-13 Intel Corporation Cooling solutions for die-down integrated circuit packages
US9054040B2 (en) * 2013-02-27 2015-06-09 Infineon Technologies Austria Ag Multi-die package with separate inter-die interconnects
US9401682B2 (en) * 2014-04-17 2016-07-26 Freescale Semiconductor, Inc. Structure for a radio frequency power amplifier module within a radio frequency power amplifier package
US9986646B2 (en) 2014-11-21 2018-05-29 Nxp Usa, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US9787254B2 (en) * 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US9899292B2 (en) 2016-02-05 2018-02-20 Qorvo Us, Inc. Top-side cooling of RF products in air cavity composite packages
US10284147B2 (en) 2016-12-15 2019-05-07 Nxp Usa, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
DE102017120753B4 (de) 2017-09-08 2021-04-29 Infineon Technologies Austria Ag SMD-Package mit Oberseitenkühlung
EP3480945A1 (en) * 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10141182B1 (en) * 2017-11-13 2018-11-27 Nxp Usa, Inc. Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof
JP2021145290A (ja) * 2020-03-13 2021-09-24 株式会社村田製作所 高周波モジュールおよび通信装置
US11621228B2 (en) * 2020-08-31 2023-04-04 Nxp Usa, Inc. Substrate with thermal vias and sinter-bonded thermal dissipation structure

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