JP2022104788A - グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム - Google Patents

グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム Download PDF

Info

Publication number
JP2022104788A
JP2022104788A JP2021169270A JP2021169270A JP2022104788A JP 2022104788 A JP2022104788 A JP 2022104788A JP 2021169270 A JP2021169270 A JP 2021169270A JP 2021169270 A JP2021169270 A JP 2021169270A JP 2022104788 A JP2022104788 A JP 2022104788A
Authority
JP
Japan
Prior art keywords
ground
ground terminal
pad
terminal
module
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021169270A
Other languages
English (en)
Japanese (ja)
Other versions
JP2022104788A5 (https=
Inventor
ケビン ジョーンズ ジェフリー
kevin jones Jeffrey
キム ケビン
Kim Kevin
エグバート バン ストラーテン フレーク
Egbert Van Straten Freek
カリル イブラヒム
Khalil Ibrahim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2022104788A publication Critical patent/JP2022104788A/ja
Publication of JP2022104788A5 publication Critical patent/JP2022104788A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
JP2021169270A 2020-12-29 2021-10-15 グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム Pending JP2022104788A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/136,304 US11842957B2 (en) 2020-12-29 2020-12-29 Amplifier modules and systems with ground terminals adjacent to power amplifier die
US17/136,304 2020-12-29

Publications (2)

Publication Number Publication Date
JP2022104788A true JP2022104788A (ja) 2022-07-11
JP2022104788A5 JP2022104788A5 (https=) 2024-10-10

Family

ID=78770370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021169270A Pending JP2022104788A (ja) 2020-12-29 2021-10-15 グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム

Country Status (4)

Country Link
US (1) US11842957B2 (https=)
EP (1) EP4024447B1 (https=)
JP (1) JP2022104788A (https=)
CN (1) CN114696759A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020126921A (ja) * 2019-02-04 2020-08-20 株式会社村田製作所 高周波モジュールおよび通信装置
JP7538097B2 (ja) * 2021-09-13 2024-08-21 株式会社東芝 半導体装置
US20240038645A1 (en) * 2022-07-26 2024-02-01 Avago Technologies International Sales Pte. Limited Semiconductor Package Interconnection Structure
US12347740B2 (en) * 2022-12-06 2025-07-01 Nxp Usa, Inc. Power amplifier module with transistor dies for multiple amplifier stages on a same heat dissipation structure
US20240203912A1 (en) * 2022-12-19 2024-06-20 Nxp Usa, Inc. Amplifier modules and systems with ground terminals adjacent to power amplifier die
US12588509B2 (en) * 2023-02-28 2026-03-24 Nxp Usa, Inc. Terminal interposers with mold flow channels, circuit modules including such terminal interposers, and associated methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755186B2 (en) * 2007-12-31 2010-07-13 Intel Corporation Cooling solutions for die-down integrated circuit packages
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US9899292B2 (en) * 2016-02-05 2018-02-20 Qorvo Us, Inc. Top-side cooling of RF products in air cavity composite packages
EP3337037A1 (en) * 2016-12-15 2018-06-20 NXP USA, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
US20190080973A1 (en) * 2017-09-08 2019-03-14 Infineon Technologies Austria Ag SMD Package with Top Side Cooling
JP2021145290A (ja) * 2020-03-13 2021-09-24 株式会社村田製作所 高周波モジュールおよび通信装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3148718B2 (ja) * 1998-08-28 2001-03-26 インダストリアル テクノロジー リサーチ インスティチュート 熱的及び電気的に増強された半導体パッケージ
US6875921B1 (en) * 2003-10-31 2005-04-05 Xilinx, Inc. Capacitive interposer
US7053469B2 (en) * 2004-03-30 2006-05-30 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package and manufacturing method thereof
US9054040B2 (en) * 2013-02-27 2015-06-09 Infineon Technologies Austria Ag Multi-die package with separate inter-die interconnects
US9401682B2 (en) * 2014-04-17 2016-07-26 Freescale Semiconductor, Inc. Structure for a radio frequency power amplifier module within a radio frequency power amplifier package
US9787254B2 (en) * 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
EP3480945A1 (en) * 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
US10141182B1 (en) * 2017-11-13 2018-11-27 Nxp Usa, Inc. Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof
US11621228B2 (en) * 2020-08-31 2023-04-04 Nxp Usa, Inc. Substrate with thermal vias and sinter-bonded thermal dissipation structure

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755186B2 (en) * 2007-12-31 2010-07-13 Intel Corporation Cooling solutions for die-down integrated circuit packages
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US9986646B2 (en) * 2014-11-21 2018-05-29 Nxp Usa, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US20190343005A1 (en) * 2014-11-21 2019-11-07 Nxp Usa, Inc. Methods of manufacturing packaged electronic devices with top terminations
US9899292B2 (en) * 2016-02-05 2018-02-20 Qorvo Us, Inc. Top-side cooling of RF products in air cavity composite packages
EP3337037A1 (en) * 2016-12-15 2018-06-20 NXP USA, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
US20190080973A1 (en) * 2017-09-08 2019-03-14 Infineon Technologies Austria Ag SMD Package with Top Side Cooling
JP2021145290A (ja) * 2020-03-13 2021-09-24 株式会社村田製作所 高周波モジュールおよび通信装置

Also Published As

Publication number Publication date
CN114696759A (zh) 2022-07-01
EP4024447B1 (en) 2025-10-29
EP4024447A1 (en) 2022-07-06
US11842957B2 (en) 2023-12-12
US20220208670A1 (en) 2022-06-30

Similar Documents

Publication Publication Date Title
EP3331161B1 (en) Amplifier die with elongated side pads, and amplifier modules that incorporate such amplifier die
CN108233876B (zh) 具有并联电感电路的多尔蒂放大器及放大器模块
CN107395129B (zh) 具有偏移的信号路径方向的多路径rf放大器及其制造方法
CN112953401B (zh) 集成多路径功率放大器
JP7727477B2 (ja) 前面インターポーザ端子とモジュールを通じる熱散逸構造とを有する回路モジュール
KR102171575B1 (ko) 증폭기 출력부 사이의 인버터를 따라 직렬 컴포넌트를 갖는 다중 경로 증폭기
JP2022104788A (ja) グランド端子が電力増幅器ダイに隣接する増幅器モジュールおよびシステム
CN111277226B (zh) 具有管芯上组合节点结构的一体成型的多路径功率放大器
CN113541620A (zh) 具有功率晶体管管芯和外围接地连接的放大器模块
CN112134533A (zh) 集成多路功率放大器
CN112398444B (zh) 具有交叉指型晶体管的集成多路径功率放大器
CN112468093A (zh) 紧凑型三路多尔蒂放大器模块
US12159845B2 (en) Transistor with integrated passive components
CN112928995B (zh) 具有表面安装封装的载波和峰化放大器的多赫蒂放大器
EP4391029A1 (en) Amplifier modules and systems with ground terminals adjacent to power amplifier die
US12347740B2 (en) Power amplifier module with transistor dies for multiple amplifier stages on a same heat dissipation structure
CN110943696A (zh) 用于自动偏置功率放大器的系统和方法
US20250211170A1 (en) Multiple-stage multiple-path power amplifier with in-package amplifier dies and external inter-stage power splitter
CN109830471A (zh) 用于基带终止和rf性能增强的硅屏蔽件

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20241002

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20241002

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20251031

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20251202

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260115

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260414