JP2021525453A5 - - Google Patents

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Publication number
JP2021525453A5
JP2021525453A5 JP2020565305A JP2020565305A JP2021525453A5 JP 2021525453 A5 JP2021525453 A5 JP 2021525453A5 JP 2020565305 A JP2020565305 A JP 2020565305A JP 2020565305 A JP2020565305 A JP 2020565305A JP 2021525453 A5 JP2021525453 A5 JP 2021525453A5
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JP
Japan
Prior art keywords
zone
gas
gases
main
injector
Prior art date
Application number
JP2020565305A
Other languages
English (en)
Japanese (ja)
Other versions
JP7205021B2 (ja
JPWO2019226957A5 (https=
JP2021525453A (ja
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Priority claimed from PCT/US2019/033853 external-priority patent/WO2019226957A1/en
Publication of JP2021525453A publication Critical patent/JP2021525453A/ja
Publication of JP2021525453A5 publication Critical patent/JP2021525453A5/ja
Publication of JPWO2019226957A5 publication Critical patent/JPWO2019226957A5/ja
Application granted granted Critical
Publication of JP7205021B2 publication Critical patent/JP7205021B2/ja
Active legal-status Critical Current
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JP2020565305A 2018-05-24 2019-05-23 気相ラジカルの制御のための複数ゾーンガス噴射 Active JP7205021B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862676173P 2018-05-24 2018-05-24
US62/676,173 2018-05-24
PCT/US2019/033853 WO2019226957A1 (en) 2018-05-24 2019-05-23 Multiple zone gas injection for control of gas phase radicals

Publications (4)

Publication Number Publication Date
JP2021525453A JP2021525453A (ja) 2021-09-24
JP2021525453A5 true JP2021525453A5 (https=) 2022-05-18
JPWO2019226957A5 JPWO2019226957A5 (https=) 2022-05-18
JP7205021B2 JP7205021B2 (ja) 2023-01-17

Family

ID=68615246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020565305A Active JP7205021B2 (ja) 2018-05-24 2019-05-23 気相ラジカルの制御のための複数ゾーンガス噴射

Country Status (6)

Country Link
US (2) US11274370B2 (https=)
JP (1) JP7205021B2 (https=)
KR (1) KR102424808B1 (https=)
CN (1) CN112204167B (https=)
TW (1) TWI784167B (https=)
WO (1) WO2019226957A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020123076A1 (de) 2020-09-03 2022-03-03 Aixtron Se Gaseinlassorgan eines CVD-Reaktors mit zwei Einspeisestellen
FI129868B (en) 2021-03-30 2022-10-14 Beneq Oy A gas feeding cup and a gas manifold assembly

Family Cites Families (22)

* Cited by examiner, † Cited by third party
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US20050241579A1 (en) * 2004-04-30 2005-11-03 Russell Kidd Face shield to improve uniformity of blanket CVD processes
US7972441B2 (en) * 2005-04-05 2011-07-05 Applied Materials, Inc. Thermal oxidation of silicon using ozone
US7326655B2 (en) * 2005-09-29 2008-02-05 Tokyo Electron Limited Method of forming an oxide layer
KR20080013568A (ko) * 2006-08-09 2008-02-13 주식회사 아이피에스 다중소스 분사 샤워헤드
US20090035463A1 (en) * 2007-08-03 2009-02-05 Tokyo Electron Limited Thermal processing system and method for forming an oxide layer on substrates
US20090291209A1 (en) * 2008-05-20 2009-11-26 Asm International N.V. Apparatus and method for high-throughput atomic layer deposition
JP5088284B2 (ja) * 2008-09-30 2012-12-05 東京エレクトロン株式会社 真空処理装置
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
US8551248B2 (en) 2010-04-19 2013-10-08 Texas Instruments Incorporated Showerhead for CVD depositions
US9175391B2 (en) 2011-05-26 2015-11-03 Intermolecular, Inc. Apparatus and method for combinatorial gas distribution through a multi-zoned showerhead
JP6225842B2 (ja) * 2014-06-16 2017-11-08 東京エレクトロン株式会社 成膜装置、成膜方法、記憶媒体
EP3207558B1 (en) * 2014-10-17 2022-08-03 Lam Research Corporation Gas supply delivery arrangement including a gas splitter for tunable gas flow control and method using said gas supply delivery arrangement
US9966270B2 (en) * 2015-03-31 2018-05-08 Lam Research Corporation Gas reaction trajectory control through tunable plasma dissociation for wafer by-product distribution and etch feature profile uniformity
JP6573559B2 (ja) * 2016-03-03 2019-09-11 東京エレクトロン株式会社 気化原料供給装置及びこれを用いた基板処理装置
US10269600B2 (en) * 2016-03-15 2019-04-23 Applied Materials, Inc. Methods and assemblies for gas flow ratio control
JP6690496B2 (ja) * 2016-03-17 2020-04-28 東京エレクトロン株式会社 成膜方法及び成膜装置
US10577690B2 (en) * 2016-05-20 2020-03-03 Applied Materials, Inc. Gas distribution showerhead for semiconductor processing
US10304668B2 (en) * 2016-05-24 2019-05-28 Tokyo Electron Limited Localized process control using a plasma system
US9738977B1 (en) * 2016-06-17 2017-08-22 Lam Research Corporation Showerhead curtain gas method and system for film profile modulation
JP6747220B2 (ja) * 2016-09-28 2020-08-26 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP6767844B2 (ja) * 2016-11-11 2020-10-14 東京エレクトロン株式会社 成膜装置及び成膜方法
KR20180053491A (ko) * 2016-11-11 2018-05-23 삼성전자주식회사 가스 분사 장치 및 이를 포함하는 기판 처리 장치

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