JP2021057534A5 - - Google Patents
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- JP2021057534A5 JP2021057534A5 JP2019181661A JP2019181661A JP2021057534A5 JP 2021057534 A5 JP2021057534 A5 JP 2021057534A5 JP 2019181661 A JP2019181661 A JP 2019181661A JP 2019181661 A JP2019181661 A JP 2019181661A JP 2021057534 A5 JP2021057534 A5 JP 2021057534A5
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- JP
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- Prior art keywords
- semiconductor switching
- semiconductor device
- switching elements
- terminal
- detection unit
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- 239000004065 semiconductor Substances 0.000 claims description 28
- 238000001514 detection method Methods 0.000 claims description 16
- 230000004913 activation Effects 0.000 claims description 2
- 239000003507 refrigerant Substances 0.000 claims 3
- 238000007789 sealing Methods 0.000 claims 2
Description
上記目的を達成するために本開示は、
並列接続された複数の半導体スイッチング素子（１１，１１ａ）を備えた半導体装置であって、
複数の半導体スイッチング素子は、一部の半導体スイッチング素子のみが、物理情報を検出するための物理情報検出部が設けられた検出部付素子（１１ａ）であり、
検出部付素子は、電極として、主電極（１１１，１１２，１１２ａ）と、制御用電極（１１３，１１４）と、検出用電極（１１５，１１５ａ〜１１５ｃ）と、を有し、
複数の半導体スイッチング素子における検出部付素子とは異なる他半導体スイッチング素子（１１）は、電極として、主電極と制御用電極とを有しており、
他半導体スイッチング素子は、検出部付素子よりも体格が小さく、活性化領域の大きさが同等である。
To achieve the above objectives, this disclosure is:
A semiconductor device including a plurality of semiconductor switching elements (11, 11a) connected in parallel.
The plurality of semiconductor switching elements are elements (11a) with a detection unit provided with a physical information detection unit for detecting physical information only in a part of the semiconductor switching elements.
The element with a detection unit has a main electrode (111,112,112a), a control electrode (113,114), and a detection electrode (115,115a to 115c) as electrodes.
The other semiconductor switching element (11), which is different from the element with a detection unit in the plurality of semiconductor switching elements, has a main electrode and a control electrode as electrodes .
The other semiconductor switching element has a smaller physique than the element with a detector, and has the same size of the activation region .
Claims (8)
複数の前記半導体スイッチング素子は、一部の前記半導体スイッチング素子のみが、物理情報を検出するための物理情報検出部が設けられた検出部付素子（１１ａ）であり、
前記検出部付素子は、電極として、主電極（１１１，１１２，１１２ａ）と、制御用電極（１１３，１１４）と、検出用電極（１１５，１１５ａ〜１１５ｃ）と、を有し、
複数の前記半導体スイッチング素子における前記検出部付素子とは異なる他半導体スイッチング素子（１１）は、電極として、前記主電極と前記制御用電極とを有しており、
前記他半導体スイッチング素子は、前記検出部付素子よりも体格が小さく、活性化領域の大きさが同等である半導体装置。 A semiconductor device including a plurality of semiconductor switching elements (11, 11a) connected in parallel.
The plurality of semiconductor switching elements are elements (11a) with a detection unit provided with a physical information detection unit for detecting physical information only in a part of the semiconductor switching elements.
The element with a detection unit has main electrodes (111, 112, 112a), control electrodes (113, 114), and detection electrodes (115, 115a to 115c) as electrodes.
The other semiconductor switching element (11), which is different from the element with a detection unit in the plurality of semiconductor switching elements, has the main electrode and the control electrode as electrodes .
The other semiconductor switching element is a semiconductor device having a smaller physique than the element with a detection unit and having the same size of the activation region .
複数の半導体スイッチング素子は、前記冷媒の流れ方向に沿って配置されており、
前記検出部付素子は、前記他半導体スイッチング素子よりも、前記冷媒の流れ方向の下流側に配置されている請求項１〜３のいずれか１項に記載の半導体装置。 It is attached to the cooler through which the refrigerant flows.
The plurality of semiconductor switching elements are arranged along the flow direction of the refrigerant.
The semiconductor device according to any one of claims 1 to 3 , wherein the element with a detection unit is arranged on the downstream side in the flow direction of the refrigerant with respect to the other semiconductor switching element.
前記第１主電極に電気的に接続された第１端子部材（１２）と、
前記第２主電極に電気的に接続された第２端子部材（１３）と、
前記制御用電極に電気的に接続された制御用端子（１９１，１９２）と、
前記検出用電極に電気的に接続された検出用端子（１９３〜１９５）と、をさらに備え、
前記封止部は、前記第１端子部材、前記第２端子部材、前記制御用端子、前記検出用端子のそれぞれの端部が露出した状態で、前記第１端子部材、前記第２端子部材、前記制御用端子、前記検出用端子を覆っている請求項５に記載の半導体装置。 The main electrode includes a first main electrode (111) formed on one surface of the semiconductor switching element and a second main electrode (112, 112a) formed on the opposite surface of the one surface.
The first terminal member (12) electrically connected to the first main electrode and
A second terminal member (13) electrically connected to the second main electrode and
A control terminal (191, 192) electrically connected to the control electrode and
Further, a detection terminal (193 to 195) electrically connected to the detection electrode is provided.
In the sealing portion, the first terminal member, the second terminal member, the control terminal, and the detection terminal are exposed at their respective ends, and the first terminal member, the second terminal member, and the like. The semiconductor device according to claim 5 , which covers the control terminal and the detection terminal.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019181661A JP2021057534A (en) | 2019-10-01 | 2019-10-01 | Semiconductor device |
| PCT/JP2020/032300 WO2021065259A1 (en) | 2019-10-01 | 2020-08-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019181661A JP2021057534A (en) | 2019-10-01 | 2019-10-01 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2021057534A JP2021057534A (en) | 2021-04-08 |
| JP2021057534A5 true JP2021057534A5 (en) | 2021-09-09 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019181661A Pending JP2021057534A (en) | 2019-10-01 | 2019-10-01 | Semiconductor device |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2021057534A (en) |
| WO (1) | WO2021065259A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2546978A4 (en) * | 2010-03-10 | 2016-03-16 | Hitachi Ltd | Power converter |
| JP5661052B2 (en) * | 2012-01-18 | 2015-01-28 | 三菱電機株式会社 | Power semiconductor module and manufacturing method thereof |
| JP6256419B2 (en) * | 2015-06-24 | 2018-01-10 | 株式会社デンソー | Semiconductor chip and semiconductor module using the same |
| DE112017001729B4 (en) * | 2016-04-01 | 2022-11-03 | Mitsubishi Electric Corporation | semiconductor modules |
| JP6439750B2 (en) * | 2016-05-20 | 2018-12-19 | 株式会社デンソー | Semiconductor device |
| JP6745991B2 (en) * | 2017-05-30 | 2020-08-26 | 三菱電機株式会社 | Semiconductor power module |
-
2019
- 2019-10-01 JP JP2019181661A patent/JP2021057534A/en active Pending
-
2020
- 2020-08-27 WO PCT/JP2020/032300 patent/WO2021065259A1/en active Application Filing
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