JP2020191149A5 - - Google Patents

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Publication number
JP2020191149A5
JP2020191149A5 JP2020042190A JP2020042190A JP2020191149A5 JP 2020191149 A5 JP2020191149 A5 JP 2020191149A5 JP 2020042190 A JP2020042190 A JP 2020042190A JP 2020042190 A JP2020042190 A JP 2020042190A JP 2020191149 A5 JP2020191149 A5 JP 2020191149A5
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JP
Japan
Prior art keywords
semiconductor die
bond pads
pair
word line
volatile memory
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JP2020042190A
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English (en)
Japanese (ja)
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JP2020191149A (ja
JP6994067B2 (ja
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Priority claimed from US16/415,377 external-priority patent/US11024385B2/en
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Publication of JP2020191149A publication Critical patent/JP2020191149A/ja
Publication of JP2020191149A5 publication Critical patent/JP2020191149A5/ja
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Publication of JP6994067B2 publication Critical patent/JP6994067B2/ja
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JP2020042190A 2019-05-17 2020-03-11 多接合メモリデバイスにおける並行メモリ動作 Active JP6994067B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US16/415,377 US11024385B2 (en) 2019-05-17 2019-05-17 Parallel memory operations in multi-bonded memory device
US16/415,377 2019-05-17

Publications (3)

Publication Number Publication Date
JP2020191149A JP2020191149A (ja) 2020-11-26
JP2020191149A5 true JP2020191149A5 (https=) 2021-07-29
JP6994067B2 JP6994067B2 (ja) 2022-01-14

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JP2020042190A Active JP6994067B2 (ja) 2019-05-17 2020-03-11 多接合メモリデバイスにおける並行メモリ動作

Country Status (5)

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US (1) US11024385B2 (https=)
JP (1) JP6994067B2 (https=)
KR (2) KR20200132675A (https=)
CN (1) CN111951851B (https=)
DE (1) DE102020106870A1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021072313A (ja) * 2019-10-29 2021-05-06 キオクシア株式会社 半導体記憶装置
WO2021232259A1 (en) * 2020-05-20 2021-11-25 Yangtze Memory Technologies Co., Ltd. 3d nand flash memory device and integration method thereof
US11481154B2 (en) * 2021-01-15 2022-10-25 Sandisk Technologies Llc Non-volatile memory with memory array between circuits
KR102870699B1 (ko) * 2021-02-10 2025-10-16 삼성전자주식회사 반도체 장치 및 이를 포함하는 데이터 저장 시스템
JP2023177065A (ja) * 2022-06-01 2023-12-13 キオクシア株式会社 半導体記憶装置及び半導体記憶装置の製造方法と半導体ウエハ
US12283324B2 (en) 2022-06-10 2025-04-22 SanDisk Technologies, Inc. Array dependent voltage compensation in a memory device
US20240062786A1 (en) * 2022-08-19 2024-02-22 Micron Technology, Inc. Wafer-on-wafer memory device architectures
US12243610B2 (en) * 2022-08-23 2025-03-04 Micron Technology, Inc. Memory with parallel main and test interfaces
CN118339647A (zh) * 2022-11-11 2024-07-12 长江先进存储产业创新中心有限责任公司 三维相变存储器及其制作方法
KR20240138322A (ko) 2023-03-10 2024-09-20 삼성전자주식회사 반도체 메모리 소자 및 이의 제조 방법
JP2024134104A (ja) 2023-03-20 2024-10-03 キオクシア株式会社 メモリデバイス
US12254949B2 (en) * 2023-05-09 2025-03-18 Macronix International Co., Ltd. Memory device
CN119212389B (zh) * 2023-06-14 2025-10-03 长鑫存储技术有限公司 半导体结构及其制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
JP5065618B2 (ja) * 2006-05-16 2012-11-07 株式会社日立製作所 メモリモジュール
US7494846B2 (en) 2007-03-09 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Design techniques for stacking identical memory dies
US7924628B2 (en) * 2007-11-14 2011-04-12 Spansion Israel Ltd Operation of a non-volatile memory array
US7957173B2 (en) * 2008-10-14 2011-06-07 Mosaid Technologies Incorporated Composite memory having a bridging device for connecting discrete memory devices to a system
JP2010257552A (ja) * 2009-04-28 2010-11-11 Elpida Memory Inc 半導体記憶装置
US8595429B2 (en) * 2010-08-24 2013-11-26 Qualcomm Incorporated Wide input/output memory with low density, low latency and high density, high latency blocks
US8582373B2 (en) * 2010-08-31 2013-11-12 Micron Technology, Inc. Buffer die in stacks of memory dies and methods
KR20130079853A (ko) * 2012-01-03 2013-07-11 삼성전자주식회사 불휘발성 메모리 장치 및 그것을 포함하는 메모리 시스템
US9177609B2 (en) * 2011-06-30 2015-11-03 Sandisk Technologies Inc. Smart bridge for memory core
US8879332B2 (en) * 2012-02-10 2014-11-04 Macronix International Co., Ltd. Flash memory with read tracking clock and method thereof
US9478502B2 (en) * 2012-07-26 2016-10-25 Micron Technology, Inc. Device identification assignment and total device number detection
KR20140023748A (ko) * 2012-08-17 2014-02-27 에스케이하이닉스 주식회사 반도체 장치
JP5802631B2 (ja) 2012-09-06 2015-10-28 株式会社東芝 半導体装置
US9123401B2 (en) * 2012-10-15 2015-09-01 Silicon Storage Technology, Inc. Non-volatile memory array and method of using same for fractional word programming
US9798620B2 (en) * 2014-02-06 2017-10-24 Sandisk Technologies Llc Systems and methods for non-blocking solid-state memory
US9952784B2 (en) * 2015-03-11 2018-04-24 Sandisk Technologies Llc Multichip dual write
US9721672B1 (en) 2016-04-15 2017-08-01 Sandisk Technologies Llc Multi-die programming with die-jumping induced periodic delays
US9792995B1 (en) 2016-04-26 2017-10-17 Sandisk Technologies Llc Independent multi-plane read and low latency hybrid read
JP6721696B2 (ja) * 2016-09-23 2020-07-15 キオクシア株式会社 メモリデバイス
KR102716191B1 (ko) * 2016-12-06 2024-10-11 삼성전자주식회사 반도체 메모리 장치 및 이를 구비하는 메모리 모듈
KR102395463B1 (ko) * 2017-09-27 2022-05-09 삼성전자주식회사 적층형 메모리 장치, 이를 포함하는 시스템 및 그 동작 방법

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