JP2019537745A5 - - Google Patents

Download PDF

Info

Publication number
JP2019537745A5
JP2019537745A5 JP2019521060A JP2019521060A JP2019537745A5 JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5 JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019521060 A JP2019521060 A JP 2019521060A JP 2019537745 A5 JP2019537745 A5 JP 2019537745A5
Authority
JP
Japan
Prior art keywords
array pattern
defect
metrology
pattern
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2019521060A
Other languages
English (en)
Japanese (ja)
Other versions
JP6906050B2 (ja
JP2019537745A (ja
Filing date
Publication date
Priority claimed from US15/730,551 external-priority patent/US10768533B2/en
Application filed filed Critical
Publication of JP2019537745A publication Critical patent/JP2019537745A/ja
Publication of JP2019537745A5 publication Critical patent/JP2019537745A5/ja
Application granted granted Critical
Publication of JP6906050B2 publication Critical patent/JP6906050B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2019521060A 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム Active JP6906050B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662410397P 2016-10-20 2016-10-20
US62/410,397 2016-10-20
US15/730,551 2017-10-11
US15/730,551 US10768533B2 (en) 2016-10-20 2017-10-11 Method and system for generating programmed defects for use in metrology measurements
PCT/US2017/057453 WO2018075804A1 (en) 2016-10-20 2017-10-19 Method and system for generating programmed defects for use in metrology measurements

Publications (3)

Publication Number Publication Date
JP2019537745A JP2019537745A (ja) 2019-12-26
JP2019537745A5 true JP2019537745A5 (https=) 2020-11-26
JP6906050B2 JP6906050B2 (ja) 2021-07-21

Family

ID=61969578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019521060A Active JP6906050B2 (ja) 2016-10-20 2017-10-19 メトロロジー測定に用いるためのプログラムされた欠陥を生成する方法およびシステム

Country Status (6)

Country Link
US (1) US10768533B2 (https=)
JP (1) JP6906050B2 (https=)
KR (1) KR102276923B1 (https=)
CN (1) CN109964177B (https=)
TW (1) TWI747973B (https=)
WO (1) WO2018075804A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3290911A1 (en) * 2016-09-02 2018-03-07 ASML Netherlands B.V. Method and system to monitor a process apparatus
US10120973B2 (en) 2017-03-15 2018-11-06 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
US10296702B2 (en) * 2017-03-15 2019-05-21 Applied Materials Israel Ltd. Method of performing metrology operations and system thereof
KR102596144B1 (ko) * 2018-12-31 2023-11-01 에이에스엠엘 네델란즈 비.브이. 프로세스 제어를 위한 인-다이 계측 방법 및 시스템
WO2020169355A1 (en) * 2019-02-20 2020-08-27 Asml Netherlands B.V. A method for characterizing a manufacturing process of semiconductor devices
US11914290B2 (en) * 2019-07-24 2024-02-27 Kla Corporation Overlay measurement targets design
US11231376B2 (en) * 2019-08-29 2022-01-25 Taiwan Semiconductor Manufacturing Company Ltd. Method for semiconductor wafer inspection and system thereof
EP3923078A1 (en) * 2020-06-10 2021-12-15 ASML Netherlands B.V. Heigth measurement method and height measurement system
US20240319617A1 (en) * 2021-07-13 2024-09-26 Asml Holding N.V. Metrology systems with phased arrays for contaminant detection and microscopy
EP4152096A1 (en) * 2021-09-15 2023-03-22 ASML Netherlands B.V. System and method for inspection by failure mechanism classification and identification in a charged particle system

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003315284A (ja) 2002-04-24 2003-11-06 Mitsubishi Electric Corp パターン検査装置の感度調整方法
US20060192949A1 (en) * 2004-12-19 2006-08-31 Bills Richard E System and method for inspecting a workpiece surface by analyzing scattered light in a back quartersphere region above the workpiece
KR20060084922A (ko) * 2005-01-21 2006-07-26 삼성전자주식회사 오버레이 측정 장치의 보정 방법
US7916927B2 (en) 2007-01-16 2011-03-29 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
NL2003294A (en) 2008-08-19 2010-03-09 Asml Netherlands Bv A method of measuring overlay error and a device manufacturing method.
CN101650534B (zh) * 2009-07-24 2012-12-12 上海宏力半导体制造有限公司 测量曝光机台焦平面均匀度的方法
CN102483582B (zh) * 2009-08-24 2016-01-20 Asml荷兰有限公司 量测方法和设备、光刻设备、光刻处理单元和包括量测目标的衬底
KR101492205B1 (ko) * 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
US9709903B2 (en) * 2011-11-01 2017-07-18 Kla-Tencor Corporation Overlay target geometry for measuring multiple pitches
NL2010717A (en) * 2012-05-21 2013-11-25 Asml Netherlands Bv Determining a structural parameter and correcting an asymmetry property.
US9214317B2 (en) * 2013-06-04 2015-12-15 Kla-Tencor Corporation System and method of SEM overlay metrology
US9347862B2 (en) * 2013-08-06 2016-05-24 Kla-Tencor Corp. Setting up a wafer inspection process using programmed defects
US10267746B2 (en) * 2014-10-22 2019-04-23 Kla-Tencor Corp. Automated pattern fidelity measurement plan generation

Similar Documents

Publication Publication Date Title
JP2019537745A5 (https=)
JP4912241B2 (ja) インスペクション方法およびインスペクション装置、リソグラフィ装置、リソグラフィ処理セルならびにデバイス製造方法
JP6723269B2 (ja) 焦点感応オーバーレイターゲットを使用する焦点決定のためのシステムおよび方法
JP4812712B2 (ja) 基板の特性を測定する方法及びデバイス測定方法
TWI623826B (zh) 微影設備及器件製造方法
JP5103082B2 (ja) リソグラフィシステム、デバイス製造方法、およびコンピュータプログラム
CN105814492B (zh) 检查设备和方法、光刻系统和器件制造方法
TWI687780B (zh) 評估極紫外光微影設備焦距控制之方法、控制極紫外光微影製程之方法、及極紫外光微影設備
TWI575338B (zh) 照明系統
CN101286013A (zh) 校准量测工具的衬底及其形成方法以及量测工具校准方法
JP4911541B2 (ja) リソグラフィツールの光学イメージングシステムの収差をその場で測定する方法
KR20090125010A (ko) 기판 내의 결함들을 결정하는 방법 및 리소그래피 프로세스에서 기판을 노광하기 위한 장치
TWI910276B (zh) 判定用於度量衡程序之效能指示符之方法、其相關電腦程式及非暫時性電腦程式載體、處理配置、度量衡設備、微影設備及對準感測器
JP5147865B2 (ja) デバイス製造方法、リソグラフィ装置およびコンピュータプログラム
JP5059916B2 (ja) リソグラフィ装置および監視方法
CN113196177A (zh) 量测传感器、照射系统、和产生具有能够配置的照射斑直径的测量照射的方法
KR20230104889A (ko) 계측 시스템 및 리소그래피 시스템
JP4339841B2 (ja) リソグラフィ装置及びデバイス製造方法
US20240168388A1 (en) Method for inferring a local uniformity metric
TWI692678B (zh) 用於確定對線寬波動微影光罩之結構無關貢獻的方法
JP5672800B2 (ja) フォトマスクの評価システム及びその方法
JP2006332659A (ja) リソグラフィ特性向上
JP6440498B2 (ja) リソグラフィシステム、リソグラフィ方法、および物品の製造方法
JP7339826B2 (ja) マーク位置決定方法、リソグラフィー方法、物品製造方法、プログラムおよびリソグラフィー装置
JP2007081393A (ja) 照明プロファイルを決定する方法及びデバイス製造方法