JP2019535120A - Etching method of electrode foil for low-voltage aluminum electrolytic capacitor with low contact resistance - Google Patents
Etching method of electrode foil for low-voltage aluminum electrolytic capacitor with low contact resistance Download PDFInfo
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- 239000011888 foil Substances 0.000 title claims abstract description 61
- 238000005530 etching Methods 0.000 title claims abstract description 45
- 239000003990 capacitor Substances 0.000 title claims abstract description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 74
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 60
- NBIIXXVUZAFLBC-UHFFFAOYSA-N phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 30
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 21
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 15
- 239000008399 tap water Substances 0.000 claims abstract description 14
- 235000020679 tap water Nutrition 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000005406 washing Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000000137 annealing Methods 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 abstract description 11
- 238000005553 drilling Methods 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 150000002500 ions Chemical class 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 2
- 238000007654 immersion Methods 0.000 abstract 4
- 238000007598 dipping method Methods 0.000 abstract 3
- 239000000243 solution Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- ZRSKSQHEOZFGLJ-UHFFFAOYSA-N Ammonium adipate Chemical compound [NH4+].[NH4+].[O-]C(=O)CCCCC([O-])=O ZRSKSQHEOZFGLJ-UHFFFAOYSA-N 0.000 description 1
- 239000001741 Ammonium adipate Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 235000019293 ammonium adipate Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/055—Etched foil electrodes
Abstract
本発明は、水酸化ナトリウム溶液で浸漬して前処理する工程と、１０〜８５秒塩酸、硫酸溶液エッチングと電気エッチングを行い、塩酸、硫酸溶液で１０〜８５秒浸漬し、水道水で洗浄し、エッチング、浸漬及びび洗浄工程を四回繰り返す工程と、塩酸、硫酸及びりん酸エッチング液で穴を拡げるために１０〜８５秒電気エッチングし、塩酸、硫酸及びびりん酸溶液で１０〜８５秒浸漬し、水道水で洗浄し、エッチング、浸漬及び洗浄工程を８回繰り返す工程と、塩酸溶液で浸漬し、硝酸溶液で浸漬し、純水で洗浄した後アニール処理を行う工程とを含む低接触抵抗の低圧用アルミニウム電解コンデンサ用の電極箔のエッチング方法を開示する。本発明は、多段階の穴あけまたは多段階の低周波で穴を拡げるプロセスによってエッチング形状を制御し、それに合わせてマルチステップで槽液による中間処理及び温水洗浄を行い、エッチング中のアルミニウム粉及び不純物イオンを十分に洗浄させ、最終的に残芯層の厚さが均一であり、エッチング層のアルミニウムの含有量が適切であり、アルミニウム粉及び不純物イオンの含有量が低い低接触抵抗の低圧用アルミニウム電解コンデンサ用の電極箔を得て、化成後の接触抵抗が４０％以上低下できる。【選択図】図１The present invention includes a step of pretreatment by dipping in a sodium hydroxide solution, etching with hydrochloric acid and sulfuric acid solution and electric etching for 10 to 85 seconds, dipping in hydrochloric acid and sulfuric acid solution for 10 to 85 seconds, and washing with tap water. Etching, dipping and washing steps are repeated four times, and electric etching is performed for 10 to 85 seconds to expand the hole with hydrochloric acid, sulfuric acid and phosphoric acid etching solution, and hydrochloric acid, sulfuric acid and phosphoric acid solution is used for 10 to 85 seconds. Low contact including immersion, cleaning with tap water, etching, immersion and cleaning process repeated 8 times; immersion with hydrochloric acid solution, immersion with nitric acid solution, cleaning with pure water, and annealing treatment An electrode foil etching method for an aluminum electrolytic capacitor for low voltage resistance is disclosed. The present invention controls the etching shape by a multi-stage drilling process or a multi-stage low-frequency widening process, and in accordance with that, multi-step intermediate treatment and hot water cleaning are performed, and aluminum powder and impurities during etching Low contact resistance aluminum with low contact resistance that sufficiently cleans the ions, finally the thickness of the remaining core layer is uniform, the aluminum content of the etching layer is appropriate, and the content of aluminum powder and impurity ions is low By obtaining an electrode foil for an electrolytic capacitor, the contact resistance after chemical conversion can be reduced by 40% or more. [Selection] Figure 1
Description
本発明は、コンデンサ用の低圧用陽極箔の電気化学エッチング方法に関する。 The present invention relates to an electrochemical etching method for a low-pressure anode foil for a capacitor.
現在、アルミニウム電解コンデンサ用の低圧用エッチング箔の周波数変換エッチング方法は、（1）酸液前処理、（2）穴あけエッチング、（3）穴を拡げるエッチング；（4）後処理、洗浄及びアニールである。エッチング中に用いられる電源周波数は商用周波数（５０Ｈｚ）であり、エッチング後、残芯層の厚さが不均一であり、エッチング層のエッチング量が大きく、エッチングされたアルミニウム粉が十分に洗浄されないので、化成後の電極箔の接触抵抗が大きくなってしまう。それ以外に、洗浄効果が好ましくなく、不純物イオンを残留し、電極箔漏電流及びアルミニウム電解コンデンサの使用年数に影響することにもなってしまう。 Currently, the frequency conversion etching method for low-pressure etching foils for aluminum electrolytic capacitors is (1) acid solution pretreatment, (2) drilling etching, (3) widening etching; (4) post-treatment, cleaning and annealing. is there. The power supply frequency used during etching is a commercial frequency (50 Hz), and after etching, the thickness of the remaining core layer is uneven, the etching amount of the etching layer is large, and the etched aluminum powder is not sufficiently cleaned. The contact resistance of the electrode foil after chemical conversion becomes large. In addition, the cleaning effect is not preferable, and impurity ions remain, which may affect the electrode foil leakage current and the age of use of the aluminum electrolytic capacitor.
本発明の目的は、以上の課題を克服するために、洗浄効果が良く、不純物イオンが少なく、接触抵抗が低く、使用年数が長いコンデンサ用の低圧用陽極箔の電気化学エッチング方法を提供することにある。 An object of the present invention is to provide an electrochemical etching method for a low-pressure anode foil for a capacitor having a good cleaning effect, low impurity ions, low contact resistance, and a long service life in order to overcome the above problems. It is in.
本発明の目的は、
（ａ）０．０１〜５ｗｔ％の水酸化ナトリウム溶液で、２０〜６０℃温度で電解コンデンサ用の低圧用陽極箔を０．５〜３分間浸漬する工程と、
（ｂ）工程（ａ）で得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸で、温度が５〜５０℃であり、電流密度が０．１〜１Ａ／ｃｍ2である条件で１０〜８５秒処理する工程と、
（ｃ）工程（ｂ）で得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸で、温度が５〜５０℃である条件で１０〜８５秒処理する工程と、
（ｄ）工程（ｃ）で得られる陽極箔を温度が４０〜６０℃の水道水で１０〜８５秒洗浄する工程と、
（ｅ）工程（ｂ）、（ｃ、）（ｄ）を４回繰り返す工程と、
（ｆ）工程（ｅ）の処理によって得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸、０．０１〜１ｗｔ％りん酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．１〜１Ａ／ｃｍ2であり、温度が１０〜４５℃であり、正弦波として変わる５〜３５Ｈｚ電源周波数で１０〜８５秒低周波数でエッチングする工程と、
（ｇ）工程（ｆ）の処理によって得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸、０．０１〜１ｗｔ％りん酸で、温度が１０〜４５℃である条件で１０〜８５秒処理する工程と、
（ｈ）工程（ｇ）で得られる陽極箔を温度が４０〜６０℃の水道水で１０〜８５秒洗浄する工程と、
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す工程と、
（ｊ）２〜６ｗｔ％の塩酸溶液で、温度が２０〜８０℃で３０〜１８０秒浸漬する工程と、
（ｋ）０．１〜４ｗｔ％の硝酸溶液で、温度が２０〜８０℃で３０〜１８０秒浸漬する工程と、
（ｌ）純水で３０〜１８０秒洗浄した後、４００〜４６０℃温度で２０〜１８０秒アニール処理する工程とを含む低接触抵抗の低圧用アルミニウム電解コンデンサ用の電極箔のエッチング方法という技術的手段によって実現される。
The purpose of the present invention is to
(A) a step of immersing a low-pressure anode foil for an electrolytic capacitor in a 0.01 to 5 wt% sodium hydroxide solution at a temperature of 20 to 60 ° C. for 0.5 to 3 minutes;
(B) The anode foil obtained in step (a) is 6-12 wt% hydrochloric acid, 0.05-1 wt% sulfuric acid, the temperature is 5-50 ° C., and the current density is 0.1-1 A / cm 2 . Processing for 10 to 85 seconds under conditions,
(C) a step of treating the anode foil obtained in the step (b) with 6 to 12 wt% hydrochloric acid and 0.05 to 1 wt% sulfuric acid for 10 to 85 seconds under the condition that the temperature is 5 to 50 ° C .;
(D) The step of washing the anode foil obtained in step (c) with tap water having a temperature of 40 to 60 ° C. for 10 to 85 seconds;
(E) repeating steps (b), (c,) and (d) four times;
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 6-12 wt% hydrochloric acid, 0.05-1 wt% sulfuric acid, 0.01-1 wt% phosphoric acid etching solution, and the current density There was 0.1~1A / cm 2, the temperature is 10 to 45 ° C., and etching at 10-85 seconds low frequency 5~35Hz power frequency vary as a sine wave,
(G) The anode foil obtained by the treatment in the step (f) is 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, 0.01 to 1 wt% phosphoric acid, and the temperature is 10 to 45 ° C. A process of ~ 85 seconds,
(H) a step of washing the anode foil obtained in the step (g) with tap water having a temperature of 40 to 60 ° C. for 10 to 85 seconds;
(I) a step of repeating steps (f), (g), (h) eight times;
(J) a step of immersing in a 2 to 6 wt% hydrochloric acid solution at a temperature of 20 to 80 ° C. for 30 to 180 seconds;
(K) a step of immersing in a nitric acid solution of 0.1 to 4 wt% at a temperature of 20 to 80 ° C. for 30 to 180 seconds;
(L) A method of etching an electrode foil for a low-voltage aluminum electrolytic capacitor for low pressure with low contact resistance, which includes a step of washing with pure water for 30 to 180 seconds and then annealing at 400 to 460 ° C. for 20 to 180 seconds. Realized by means.
本発明は、従来の技術と比べると、
アルカリ液前処理、穴あけ及び穴を拡げるプロセスが一つずつ行われ、各ステップ後に槽液での中間処理及び温水洗浄フローが増え、穴を拡げる際に、電源の周波数を制御することによって、均一な残芯層のエッチング形状を得て、低接触抵抗を得る低周波数でのエッチング方法が実現するというメリットを有する。
The present invention, compared with the prior art,
Alkaline solution pretreatment, drilling and hole expansion process are performed one by one, and after each step, intermediate treatment with bath liquid and hot water washing flow increase, and by expanding the hole, the frequency of power supply is controlled uniformly Thus, there is an advantage that a low frequency etching method for obtaining a low etching resistance of the remaining core layer is obtained.
以下、具体的な実施例を組み合わせて本発明を更に説明するが、本発明は、以下の実施例に限定されるものではない。特記しない限り、前記方法は常例の方法である。 Hereinafter, the present invention will be further described in combination with specific examples, but the present invention is not limited to the following examples. Unless otherwise stated, the methods are conventional methods.
実施例１
（ａ）電解コンデンサ用の低圧用陽極箔を０．０１ｗｔ％の水酸化ナトリウム溶液に入れ、４０℃の温度で３分間浸漬する。
（ｂ）工程（ａ）で得られる陽極箔を６ｗｔ％塩酸、０．１ｗｔ％硫酸で、温度が３０℃であり、電流密度が０．３Ａ／ｃｍ2である条件で２０秒処理する。
（ｃ）工程（ｂ）で得られる陽極箔を６ｗｔ％塩酸、０．１ｗｔ％硫酸で、温度が３０℃の条件で２０秒処理する。
（ｄ）工程（ｃ）で得られる陽極箔を温度が４０℃の水道水で３０秒洗浄する。
（ｅ）工程（ｂ）、（ｃ）、（ｄ）を４回繰り返す。
（ｆ）工程（ｅ）の処理によって得られる陽極箔を６ｗｔ％塩酸、０．１ｗｔ％硫酸、０．０１ｗｔ％りん酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．１Ａ／ｃｍ2であり、温度が３０℃であり、正弦波として変わる５〜３５Ｈｚ周波数で低くから高くまで２０秒低周波数でエッチングする。
（ｇ）工程（ｆ）の処理によって得られる陽極箔を６ｗｔ％塩酸、０．１ｗｔ％硫酸、０．０１ｗｔ％りん酸で、温度が３０℃である条件で２０秒処理する。
（ｈ）工程（ｇ）で得られる陽極箔を采用温度が４０℃の水道水で３０秒洗浄する。
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す。
（ｊ）２ｗｔ％の塩酸溶液で、温度が５０℃で３０秒浸漬する。
（ｋ）０．１ｗｔ％の硝酸溶液で、温度が５０℃で３０秒浸漬する。
（ｌ）純水で６０秒洗浄した後、４２０℃の温度で１５０秒アニール処理する。
Example 1
(A) A low-pressure anode foil for an electrolytic capacitor is placed in a 0.01 wt% sodium hydroxide solution and immersed at a temperature of 40 ° C. for 3 minutes.
(B) The anode foil obtained in the step (a) is treated with 6 wt% hydrochloric acid and 0.1 wt% sulfuric acid at a temperature of 30 ° C. and a current density of 0.3 A / cm 2 for 20 seconds.
(C) The anode foil obtained in the step (b) is treated with 6 wt% hydrochloric acid and 0.1 wt% sulfuric acid for 20 seconds at a temperature of 30 ° C.
(D) The anode foil obtained in the step (c) is washed with tap water having a temperature of 40 ° C. for 30 seconds.
(E) Steps (b), (c) and (d) are repeated four times.
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 6 wt% hydrochloric acid, 0.1 wt% sulfuric acid, 0.01 wt% phosphoric acid etching solution, and the current density is 0.1 A / cm. 2. Etching at a low frequency for 20 seconds from low to high at a 5-35 Hz frequency changing as a sine wave at a temperature of 30 ° C.
(G) The anode foil obtained by the treatment in the step (f) is treated with 6 wt% hydrochloric acid, 0.1 wt% sulfuric acid and 0.01 wt% phosphoric acid for 20 seconds under the condition that the temperature is 30 ° C.
(H) The anode foil obtained in the step (g) is washed for 30 seconds with tap water having a potting temperature of 40 ° C.
(I) Steps (f), (g), and (h) are repeated 8 times.
(J) Immerse in a 2 wt% hydrochloric acid solution at a temperature of 50 ° C. for 30 seconds.
(K) It is immersed in a 0.1 wt% nitric acid solution at a temperature of 50 ° C. for 30 seconds.
(L) After cleaning with pure water for 60 seconds, annealing is performed at a temperature of 420 ° C. for 150 seconds.
実施例２
（ａ）電解コンデンサ用の低圧用陽極箔を０．５ｗｔ％の水酸化ナトリウム溶液に入れ、５０℃温度で２分間浸漬する。
（ｂ）工程（ａ）で得られる陽極箔を８ｗｔ％塩酸、０．３ｗｔ％硫酸で、温度が４０℃で、電流密度が０．５Ａ／ｃｍ2である条件で４０秒処理する。
（ｃ）工程（ｂ）で得られる陽極箔を８ｗｔ％塩酸、０．３ｗｔ％硫酸で、温度が４０℃である条件で４０秒処理する。
（ｄ）工程（ｃ）で得られる陽極箔を温度が４５℃の水道水で４０秒洗浄する。
（ｅ）工程（ｂ）、（ｃ）、（ｄ）を４回繰り返す。
（ｆ）工程（ｅ）の処理によって得られる陽極箔を８ｗｔ％塩酸、０．３ｗｔ％硫酸、０．１ｗｔ％りん酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．３Ａ／ｃｍ2で、温度が３５℃で、正弦波として変わる５〜３５Ｈｚ周波数で低くから高くまで４０秒低周波数でエッチングする。
（ｇ）工程（ｆ）の処理によって得られる陽極箔を８ｗｔ％塩酸、０．３ｗｔ％硫酸、０．１ｗｔ％りん酸で、温度が３５℃である条件で４０秒処理する。
（ｈ）工程（ｇ）で得られる陽極箔を温度が４５℃の水道水で４０秒洗浄する。
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す。
（ｊ）３ｗｔ％の塩酸溶液で、温度が６０℃で６０秒浸漬する。
（ｋ）１ｗｔ％の硝酸溶液で、温度が６０℃で６０秒浸漬する。
（ｌ）純水で９０秒洗浄した後、４３０℃温度で１２０秒アニール処理する。
Example 2
(A) A low-pressure anode foil for an electrolytic capacitor is placed in a 0.5 wt% sodium hydroxide solution and immersed at a temperature of 50 ° C. for 2 minutes.
(B) The anode foil obtained in the step (a) is treated with 8 wt% hydrochloric acid and 0.3 wt% sulfuric acid at a temperature of 40 ° C. and a current density of 0.5 A / cm 2 for 40 seconds.
(C) The anode foil obtained in the step (b) is treated with 8 wt% hydrochloric acid and 0.3 wt% sulfuric acid for 40 seconds under the condition that the temperature is 40 ° C.
(D) The anode foil obtained in the step (c) is washed with tap water having a temperature of 45 ° C. for 40 seconds.
(E) Steps (b), (c) and (d) are repeated four times.
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 8 wt% hydrochloric acid, 0.3 wt% sulfuric acid, 0.1 wt% phosphoric acid etching solution, and the current density is 0.3 A / cm. 2. Etching at a low frequency of 40 seconds from low to high at a frequency of 5 to 35 Hz which changes as a sine wave at a temperature of 35 ° C.
(G) The anode foil obtained by the treatment in the step (f) is treated with 8 wt% hydrochloric acid, 0.3 wt% sulfuric acid and 0.1 wt% phosphoric acid for 40 seconds under the condition that the temperature is 35 ° C.
(H) The anode foil obtained in the step (g) is washed with tap water having a temperature of 45 ° C. for 40 seconds.
(I) Steps (f), (g), and (h) are repeated 8 times.
(J) It is immersed in a 3 wt% hydrochloric acid solution at a temperature of 60 ° C. for 60 seconds.
(K) Immerse in a 1 wt% nitric acid solution at a temperature of 60 ° C. for 60 seconds.
(L) After washing with pure water for 90 seconds, annealing is performed at 430 ° C. for 120 seconds.
実施例３
（ａ）電解コンデンサ用の低圧用陽極箔を２ｗｔ％の水酸化ナトリウム溶液に入れ、５５℃温度で１分間浸漬する。
（ｂ）工程（ａ）で得られる陽極箔を１０ｗｔ％塩酸、０．５ｗｔ％硫酸で、温度が４５℃、電流密度が０．７Ａ／ｃｍ2である条件で６０秒処理する。
（ｃ）工程（ｂ）で得られる陽極箔を１０ｗｔ％塩酸、０．５ｗｔ％硫酸で、温度が４５℃である条件で６０秒処理する。
（ｄ）工程（ｃ）で得られる陽極箔を温度が５０℃の水道水で６０秒洗浄する。
（ｅ）工程（ｂ）、（ｃ）、（ｄ）を４回繰り返す。
（ｆ）工程（ｅ）の処理によって得られる陽極箔を１０ｗｔ％塩酸、０．５ｗｔ％硫酸、０．５ｗｔ％りん酸エッチング液で穴を拡げるエッチングし、電流密度が０．４Ａ／ｃｍ2で、温度が４０℃で、正弦波として変わる５〜３５Ｈｚ周波数で低くから高くまで６０秒低周波数でエッチングする。
（ｇ）工程（ｆ）の処理によって得られる陽極箔を１０ｗｔ％塩酸、０．５ｗｔ％硫酸、０．５ｗｔ％りん酸で、温度が４０℃である条件で６０秒処理する。
（ｈ）工程（ｇ）で得られる陽極箔を温度が５０℃の水道水で６０秒洗浄する。
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す。
（ｊ）４ｗｔ％の塩酸溶液で、温度が７０℃で９０秒浸漬する。
（ｋ）２ｗｔ％の硝酸溶液で、温度が７０℃で９０秒浸漬する。
（ｌ）純水で１２０秒洗浄した後、４４０℃温度で９０秒アニール処理する。
Example 3
(A) A low-pressure anode foil for an electrolytic capacitor is placed in a 2 wt% sodium hydroxide solution and immersed at a temperature of 55 ° C. for 1 minute.
(B) The anode foil obtained in the step (a) is treated with 10 wt% hydrochloric acid and 0.5 wt% sulfuric acid for 60 seconds under the conditions of a temperature of 45 ° C. and a current density of 0.7 A / cm 2 .
(C) The anode foil obtained in the step (b) is treated with 10 wt% hydrochloric acid and 0.5 wt% sulfuric acid for 60 seconds under the condition that the temperature is 45 ° C.
(D) The anode foil obtained in the step (c) is washed with tap water having a temperature of 50 ° C. for 60 seconds.
(E) Steps (b), (c) and (d) are repeated four times.
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 10 wt% hydrochloric acid, 0.5 wt% sulfuric acid, 0.5 wt% phosphoric acid etching solution, and the current density is 0.4 A / cm 2 . Etching at a low frequency of 60 seconds from low to high at a temperature of 40 ° C. and a 5-35 Hz frequency changing as a sine wave.
(G) The anode foil obtained by the treatment in the step (f) is treated with 10 wt% hydrochloric acid, 0.5 wt% sulfuric acid, and 0.5 wt% phosphoric acid for 60 seconds at a temperature of 40 ° C.
(H) The anode foil obtained in the step (g) is washed with tap water having a temperature of 50 ° C. for 60 seconds.
(I) Steps (f), (g), and (h) are repeated 8 times.
(J) It is immersed in a 4 wt% hydrochloric acid solution at a temperature of 70 ° C. for 90 seconds.
(K) Immerse in a 2 wt% nitric acid solution at a temperature of 70 ° C. for 90 seconds.
(L) After washing with pure water for 120 seconds, annealing is performed at a temperature of 440 ° C. for 90 seconds.
実施例４
（ａ）４ｗｔ％の水酸化ナトリウム溶液で、６０℃温度で電解コンデンサ用の低圧用陽極箔を０．５分間浸漬する。
（ｂ）工程（ａ）で得られる陽極箔を１２ｗｔ％塩酸、０．８ｗｔ％硫酸で、温度が５０℃、電流密度が０．９Ａ／ｃｍ2である条件で８０秒処理する。
（ｃ）工程（ｂ）で得られる陽極箔を１２ｗｔ％塩酸、０．８ｗｔ％硫酸で、温度が５０℃である条件で８０秒処理する。
（ｄ）工程（ｃ）で得られる陽極箔を温度が５５℃の水道水で４０秒洗浄する。
（ｅ）工程（ｂ）、（ｃ）、（ｄ）を４回繰り返す。
（ｆ）工程（ｅ）の処理によって得られる陽極箔を１２ｗｔ％塩酸、０．８ｗｔ％硫酸、０．８ｗｔ％りん酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．５Ａ／ｃｍ2で、温度が４５℃で、正弦波として変わる５〜３５Ｈｚ周波数で低くから高くまで８０秒低周波数でエッチングする。
（ｇ）工程（ｆ）の処理によって得られる陽極箔を１２ｗｔ％塩酸、０．８ｗｔ％硫酸、０．８ｗｔ％りん酸で、温度が４５℃である条件で８０秒処理する。
（ｈ）工程（ｇ）で得られる陽極箔を温度が８０℃の水道水で４０秒洗浄する。
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す。
（ｊ）５ｗｔ％の塩酸溶液で、温度が８０℃で１２０秒浸漬する。
（ｋ）３ｗｔ％の硝酸溶液で、温度が５５℃で１２０秒浸漬する。
（ｌ）純水で１５０秒洗浄した後、４５０℃温度で６０秒アニール処理する。
Example 4
(A) A low-pressure anode foil for an electrolytic capacitor is immersed in a 4 wt% sodium hydroxide solution at a temperature of 60 ° C. for 0.5 minutes.
(B) The anode foil obtained in the step (a) is treated with 12 wt% hydrochloric acid and 0.8 wt% sulfuric acid for 80 seconds under the conditions of a temperature of 50 ° C. and a current density of 0.9 A / cm 2 .
(C) The anode foil obtained in the step (b) is treated with 12 wt% hydrochloric acid and 0.8 wt% sulfuric acid for 80 seconds under the condition that the temperature is 50 ° C.
(D) The anode foil obtained in the step (c) is washed with tap water having a temperature of 55 ° C. for 40 seconds.
(E) Steps (b), (c) and (d) are repeated four times.
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 12 wt% hydrochloric acid, 0.8 wt% sulfuric acid, 0.8 wt% phosphoric acid etching solution, and the current density is 0.5 A / cm. 2. Etching at a low frequency of 80 seconds from low to high at a 5-35 Hz frequency changing as a sine wave at a temperature of 45 ° C
(G) The anode foil obtained by the treatment in the step (f) is treated with 12 wt% hydrochloric acid, 0.8 wt% sulfuric acid, and 0.8 wt% phosphoric acid for 80 seconds at a temperature of 45 ° C.
(H) The anode foil obtained in the step (g) is washed with tap water having a temperature of 80 ° C. for 40 seconds.
(I) Steps (f), (g), and (h) are repeated 8 times.
(J) It is immersed in a 5 wt% hydrochloric acid solution at a temperature of 80 ° C. for 120 seconds.
(K) Immerse in a 3 wt% nitric acid solution at a temperature of 55 ° C. for 120 seconds.
(L) After cleaning with pure water for 150 seconds, annealing is performed at 450 ° C. for 60 seconds.
比較例（従来のエッチングプロセス）
（ａ）０．０５ｗｔ％のりん酸溶液で、６０℃温度で電解コンデンサ用の低圧用陽極箔を１分間浸漬する。
（ｂ）工程（ａ）で得られる陽極箔を８ｗｔ％塩酸、０．５ｗｔ％硫酸で、温度が５０℃、電流密度が０．３Ａ／ｃｍ2である条件で３分間処理する。
（ｃ）工程（ｂ）の処理によって得られる陽極箔を８ｗｔ％塩酸、０．５ｗｔ％硫酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．３Ａ／ｃｍ2で、温度が５０℃で、正弦波として変わる５０Ｈｚ電源周波数で４分間電気化学エッチングする。
（ｄ）工程（ｃ）の処理によって得られる陽極箔を１ｗｔ％の硝酸溶液で、温度が７０℃で６０秒浸漬する。
（ｅ）純水で６０秒洗浄した後、４２０℃温度で６０秒アニール処理する。
Comparative example (conventional etching process)
(A) A low-pressure anode foil for an electrolytic capacitor is immersed in a 0.05 wt% phosphoric acid solution at a temperature of 60 ° C. for 1 minute.
(B) The anode foil obtained in step (a) is treated with 8 wt% hydrochloric acid and 0.5 wt% sulfuric acid for 3 minutes under the conditions of a temperature of 50 ° C. and a current density of 0.3 A / cm 2 .
(C) The anode foil obtained by the treatment in the step (b) is etched to widen the hole with 8 wt% hydrochloric acid and 0.5 wt% sulfuric acid etching solution, the current density is 0.3 A / cm 2 , and the temperature is 50 ° C. Then, electrochemical etching is performed for 4 minutes at a power supply frequency of 50 Hz which changes as a sine wave.
(D) The anode foil obtained by the process (c) is immersed in a 1 wt% nitric acid solution at a temperature of 70 ° C. for 60 seconds.
(E) After cleaning with pure water for 60 seconds, annealing is performed at 420 ° C. for 60 seconds.
本発明によるエッチング電極箔を、従来のプロセスによるエッチング電極箔が生産ラインで化成された後、対比したデータの結果は以下の通りである（化成条件：アジピン酸アンモニウム槽液、Ｖｆｅ＝２１Ｖ）。 After the etching electrode foil according to the present invention was formed in the production line by the etching electrode foil according to the conventional process, the results of the comparison data are as follows (forming conditions: ammonium adipate bath solution, Vfe = 21V).
対比結果から、本発明エッチングプロセスによるエッチング電極箔は化成後、接触抵抗が顕著に低下し、従来のエッチングプロセスに比べると、４０％を超えて低下することがわかる。 From the comparison results, it can be seen that the contact resistance of the etched electrode foil by the etching process of the present invention is remarkably reduced after the formation, and is more than 40% lower than that of the conventional etching process.
本発明は、アルカリ液前処理、穴あけ及び穴を拡げるプロセスを一つずつ行い、各ステップ後に槽液による中間処理及び温水洗浄フローが増えることによって、穴を拡げる際に、電源周波数を制御することによって、均一な残芯層エッチング形状を得る。 The present invention performs the alkaline liquid pretreatment, the drilling process and the hole expanding process one by one, and the power supply frequency is controlled when the hole is expanded by increasing the intermediate treatment with the bath liquid and the hot water washing flow after each step. Thus, a uniform residual core layer etching shape is obtained.
出願人は又、本発明は上記実施例によって本発明の実現方法及び装置構造を説明するが、本発明は上記実施形態に限定されず、即ち、本発明は上記方法及び構造によって実現されなければならないことを意味しない。所属技術分野の技術者は、本発明に対するいかなる改善、本発明に用いられる実現方法の及び工程に対する添加、実施形態の選択等がいずれも本発明の保護範囲と開示の範囲内に落ちることがわかるべきである。 The applicant also explains the implementation method and apparatus structure of the present invention by the above embodiment, but the present invention is not limited to the above embodiment, that is, the present invention must be implemented by the above method and structure. It doesn't mean you don't have to. Those skilled in the field of the art will recognize that any improvement to the present invention, addition of implementation methods and steps used in the present invention, selection of embodiments, etc. fall within the scope of protection and disclosure of the present invention. Should.
本発明は、上記実施形態に限定されず、本発明と近似する構造及びその方法によって本発明の目的を実現する全ての手段はいずれも本発明の保護範囲内にある。 The present invention is not limited to the above-described embodiment, and all means for realizing the object of the present invention by the structure and method similar to the present invention are within the protection scope of the present invention.
Claims (1)
（ｂ）工程（ａ）で得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸で、温度が５〜５０℃であり、電流密度が０．１〜１Ａ／ｃｍ2である条件で１０〜８５秒処理する工程と、
（ｃ）工程（ｂ）で得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸で、温度が５〜５０℃である条件で１０〜８５秒処理する工程と、
（ｄ）工程（ｃ）で得られる陽極箔を温度が４０〜６０℃の水道水で１０〜８５秒洗浄する工程と、
（ｅ）工程（ｂ）、（ｃ、）、（ｄ）を４回繰り返す工程と、
（ｆ）工程（ｅ）の処理によって得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸、０．０１〜１ｗｔ％りん酸エッチング液で穴を拡げるためにエッチングし、電流密度が０．１〜１Ａ／ｃｍ2であり、温度が１０〜４５℃であり、正弦波として変わる５〜３５Ｈｚ電源周波数で１０〜８５秒低周波数でエッチングする工程と、
（ｇ）工程（ｆ）の処理によって得られる陽極箔を６〜１２ｗｔ％塩酸、０．０５〜１ｗｔ％硫酸、０．０１〜１ｗｔ％りん酸で、温度が１０〜４５℃である条件で１０〜８５秒処理する工程と、
（ｈ）工程（ｇ）で得られる陽極箔を温度が４０〜６０℃の水道水で１０〜８５秒洗浄する工程と、
（ｉ）工程（ｆ）、（ｇ）、（ｈ）を８回繰り返す工程と、
（ｊ）２〜６ｗｔ％の塩酸溶液で、温度が２０〜８０℃で３０〜１８０秒浸漬する工程と、
（ｋ）０．１〜４ｗｔ％の硝酸溶液で、温度が２０〜８０℃で３０〜１８０秒浸漬する工程と、
（ｌ）純水で３０〜１８０秒洗浄した後、４００〜４６０℃温度で２０〜１８０秒アニール処理する工程とを含む、ことを特徴とする低接触抵抗の低圧用アルミニウム電解コンデンサ用の電極箔のエッチング方法。 (A) a step of immersing a low-pressure anode foil for an electrolytic capacitor in a 0.01 to 5 wt% sodium hydroxide solution at a temperature of 20 to 60 ° C. for 0.5 to 3 minutes;
(B) The anode foil obtained in step (a) is 6-12 wt% hydrochloric acid, 0.05-1 wt% sulfuric acid, the temperature is 5-50 ° C., and the current density is 0.1-1 A / cm 2 . Processing for 10 to 85 seconds under conditions,
(C) a step of treating the anode foil obtained in the step (b) with 6 to 12 wt% hydrochloric acid and 0.05 to 1 wt% sulfuric acid for 10 to 85 seconds under the condition that the temperature is 5 to 50 ° C .;
(D) The step of washing the anode foil obtained in step (c) with tap water having a temperature of 40 to 60 ° C. for 10 to 85 seconds;
(E) repeating the steps (b), (c,), (d) four times;
(F) The anode foil obtained by the treatment in the step (e) is etched to widen the hole with 6-12 wt% hydrochloric acid, 0.05-1 wt% sulfuric acid, 0.01-1 wt% phosphoric acid etching solution, and the current density There was 0.1~1A / cm 2, the temperature is 10 to 45 ° C., and etching at 10-85 seconds low frequency 5~35Hz power frequency vary as a sine wave,
(G) The anode foil obtained by the treatment in the step (f) is 6 to 12 wt% hydrochloric acid, 0.05 to 1 wt% sulfuric acid, 0.01 to 1 wt% phosphoric acid, and the temperature is 10 to 45 ° C. A process of ~ 85 seconds,
(H) a step of washing the anode foil obtained in the step (g) with tap water having a temperature of 40 to 60 ° C. for 10 to 85 seconds;
(I) a step of repeating steps (f), (g), (h) eight times;
(J) a step of immersing in a 2 to 6 wt% hydrochloric acid solution at a temperature of 20 to 80 ° C. for 30 to 180 seconds;
(K) a step of immersing in a nitric acid solution of 0.1 to 4 wt% at a temperature of 20 to 80 ° C. for 30 to 180 seconds;
(L) An electrode foil for an aluminum electrolytic capacitor for low pressure with low contact resistance, comprising: a step of washing with pure water for 30 to 180 seconds and then annealing at 400 to 460 ° C. for 20 to 180 seconds Etching method.
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| CN108486645B (en) * | 2018-03-19 | 2020-09-22 | 南通海星电子股份有限公司 | Corrosion method of low-voltage electrode foil of surface mount type aluminum electrolytic capacitor |
| CN112981516B (en) * | 2021-02-03 | 2022-04-05 | 广州金立电子有限公司 | Anode aluminum foil corrosion method for aluminum electrolytic capacitor |
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Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370053A (en) * | 1976-12-02 | 1978-06-22 | Polychrome Corp | Electrolytic graining method of aluminium sheet |
| JPS5825218A (en) * | 1981-07-09 | 1983-02-15 | Siemens Ag | Method of producing low voltage electrolytic condenser electrode foil |
| JPH09246112A (en) * | 1996-03-14 | 1997-09-19 | Matsushita Electric Ind Co Ltd | Manufacture of electrode foil for aluminum electrolytic capacitor |
| JPH1126320A (en) * | 1997-07-02 | 1999-01-29 | Matsushita Electric Ind Co Ltd | Aluminum electric capacitor and electrode foil for it |
| JP2000199026A (en) * | 1998-12-28 | 2000-07-18 | Nippon Foil Mfg Co Ltd | Hard aluminum foil for electrolytic capacitor electrode and its production |
| JP2000216064A (en) * | 1999-01-25 | 2000-08-04 | Nippon Foil Mfg Co Ltd | Electrode foil having less spotted luster for electrolytic capacitor and its manufacturing method |
| JP2002008950A (en) * | 2000-06-23 | 2002-01-11 | Matsushita Electric Ind Co Ltd | Method of manufacturing electrode foil for aluminum electrolytic capacitor |
| JP2002266100A (en) * | 2001-03-09 | 2002-09-18 | Matsushita Electric Ind Co Ltd | Carbon electrode for etching and method for etching electrode foil for aluminum electrolytic capacitor using the same |
| JP2006114541A (en) * | 2004-10-12 | 2006-04-27 | Matsushita Electric Ind Co Ltd | Electrode foil and method of manufacturing the same for electrolytic capacitor |
| JP2007324253A (en) * | 2006-05-31 | 2007-12-13 | Nichicon Corp | Manufacturing method of aluminum electrode foil for electrolytic capacitor |
| JP2009105190A (en) * | 2007-10-23 | 2009-05-14 | Panasonic Corp | Manufacturing apparatus of electrode foil for electrolytic capacitor |
| JP2009290084A (en) * | 2008-05-30 | 2009-12-10 | Nichicon Corp | Method for manufacturing electrode foil for electrolytic capacitor |
| JP2010131289A (en) * | 2008-12-08 | 2010-06-17 | Takara:Kk | Heat storage material bedclothing |
| JP2013004650A (en) * | 2011-06-15 | 2013-01-07 | Panasonic Corp | Anode foil for electrolytic capacitor and aluminum electrolytic capacitor using the same or functional polymer aluminum electrolytic capacitor and manufacturing method of anode foil for electrolytic capacitor |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2638038B2 (en) * | 1988-02-19 | 1997-08-06 | 松下電器産業株式会社 | Manufacturing method of electrode foil for aluminum electrolytic capacitor |
| JPH0653083A (en) * | 1992-07-30 | 1994-02-25 | Matsushita Electric Ind Co Ltd | Manufacture of electrode foil for aluminum electrolytic capacitor |
| CN1920114A (en) * | 2006-08-02 | 2007-02-28 | 扬州宏远电子有限公司 | Corrosion method of anode foil for low-voltage aluminum electrolytic capacitor |
| CN101423946A (en) * | 2008-07-29 | 2009-05-06 | 东莞市东阳光电容器有限公司 | Technique for preparing etched foil of medium-high voltage anode foil for energy-saving lamp |
| CN101425391B (en) * | 2008-07-29 | 2011-06-15 | 东莞市东阳光电容器有限公司 | Producing method for low voltage anode foil of aluminum electrolysis capacitor |
| CN101645354B (en) * | 2009-08-27 | 2011-01-26 | 南通华冠电子科技有限公司 | Preparation method of high pressure anode foil for aluminum electrolytic capacitor |
| CN102094231A (en) * | 2011-01-11 | 2011-06-15 | 江苏立富电极箔有限公司 | Process for corroding anode foil for intermediate and high voltage aluminum electrolytic capacitor |
| CN104611760B (en) * | 2014-12-15 | 2017-05-10 | 肇庆华锋电子铝箔股份有限公司 | Electronic aluminum foil energy conservation and environmental protection electrochemical corrosion expansion method |
| CN106449110A (en) * | 2016-12-07 | 2017-02-22 | 南通海星电子股份有限公司 | Mesohigh-voltage corrosion foil five-stage face expansion corrosion method for aluminum electrolytic capacitor |
| CN107591247A (en) * | 2017-08-30 | 2018-01-16 | 南通海星电子股份有限公司 | A kind of low contact resistance low-voltage aluminum electrolytic capacitor electrode foil corrosion method |
-
2017
- 2017-08-30 CN CN201710765155.8A patent/CN107591247A/en active Pending
-
2018
- 2018-03-28 JP JP2018566562A patent/JP6768088B2/en active Active
- 2018-03-28 WO PCT/CN2018/080808 patent/WO2019041797A1/en active Application Filing
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5370053A (en) * | 1976-12-02 | 1978-06-22 | Polychrome Corp | Electrolytic graining method of aluminium sheet |
| JPS5825218A (en) * | 1981-07-09 | 1983-02-15 | Siemens Ag | Method of producing low voltage electrolytic condenser electrode foil |
| JPH09246112A (en) * | 1996-03-14 | 1997-09-19 | Matsushita Electric Ind Co Ltd | Manufacture of electrode foil for aluminum electrolytic capacitor |
| JPH1126320A (en) * | 1997-07-02 | 1999-01-29 | Matsushita Electric Ind Co Ltd | Aluminum electric capacitor and electrode foil for it |
| JP2000199026A (en) * | 1998-12-28 | 2000-07-18 | Nippon Foil Mfg Co Ltd | Hard aluminum foil for electrolytic capacitor electrode and its production |
| JP2000216064A (en) * | 1999-01-25 | 2000-08-04 | Nippon Foil Mfg Co Ltd | Electrode foil having less spotted luster for electrolytic capacitor and its manufacturing method |
| JP2002008950A (en) * | 2000-06-23 | 2002-01-11 | Matsushita Electric Ind Co Ltd | Method of manufacturing electrode foil for aluminum electrolytic capacitor |
| JP2002266100A (en) * | 2001-03-09 | 2002-09-18 | Matsushita Electric Ind Co Ltd | Carbon electrode for etching and method for etching electrode foil for aluminum electrolytic capacitor using the same |
| JP2006114541A (en) * | 2004-10-12 | 2006-04-27 | Matsushita Electric Ind Co Ltd | Electrode foil and method of manufacturing the same for electrolytic capacitor |
| JP2007324253A (en) * | 2006-05-31 | 2007-12-13 | Nichicon Corp | Manufacturing method of aluminum electrode foil for electrolytic capacitor |
| JP2009105190A (en) * | 2007-10-23 | 2009-05-14 | Panasonic Corp | Manufacturing apparatus of electrode foil for electrolytic capacitor |
| JP2009290084A (en) * | 2008-05-30 | 2009-12-10 | Nichicon Corp | Method for manufacturing electrode foil for electrolytic capacitor |
| JP2010131289A (en) * | 2008-12-08 | 2010-06-17 | Takara:Kk | Heat storage material bedclothing |
| JP2013004650A (en) * | 2011-06-15 | 2013-01-07 | Panasonic Corp | Anode foil for electrolytic capacitor and aluminum electrolytic capacitor using the same or functional polymer aluminum electrolytic capacitor and manufacturing method of anode foil for electrolytic capacitor |
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| JP6768088B2 (en) | 2020-10-14 |
| CN107591247A (en) | 2018-01-16 |
| WO2019041797A1 (en) | 2019-03-07 |
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