JP2019534568A - 取り外し可能な基板平面構造リング - Google Patents
取り外し可能な基板平面構造リング Download PDFInfo
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- JP2019534568A JP2019534568A JP2019522522A JP2019522522A JP2019534568A JP 2019534568 A JP2019534568 A JP 2019534568A JP 2019522522 A JP2019522522 A JP 2019522522A JP 2019522522 A JP2019522522 A JP 2019522522A JP 2019534568 A JP2019534568 A JP 2019534568A
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- JP
- Japan
- Prior art keywords
- substrate
- planar structure
- removable
- platen
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67353—Closed carriers specially adapted for a single substrate
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/72—Repair or correction of mask defects
- G03F1/74—Repair or correction of mask defects by charged particle beam [CPB], e.g. focused ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0279—Ionlithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (15)
- 基板を保持するプラテンと、
該プラテンの前に配置され、その中に開口を有する基板平面構造と、
該基板平面構造の前記開口の中に配置され、前記プラテンの表面を露出する開口を有する取り外し可能な構造と、を備える装置。 - 前記取り外し可能な構造は、1つ以上の取り外し可能な固定器具部材を用いて、前記基板平面構造の背面に取り外し可能に取り付けられる、請求項1記載の装置。
- 前記取り外し可能な構造は、前記基板平面構造の背面に接触するレッジを含む、請求項1記載の装置。
- 前記レッジは、前記基板平面構造の前記背面の1つ以上のホールに同調する1つ以上のスルーホールを含み、少なくとも1つの取り外し可能な固定器具部材は、前記1つ以上のスルーホールの中に配置され、前記基板平面構造の前記背面の前記1つ以上のホールは、前記取り外し可能な構造を前記基板平面構造に取り外し可能に取り付ける、請求項3記載の装置。
- 前記取り外し可能な構造は取り外し可能なリング構造である、請求項1記載の装置。
- 基板を保持するプラテンと、
該プラテンの前に配置され、その中に開口を有する基板平面構造と、
該基板平面構造の前記開口の中に配置され、前記プラテンの表面を露出する開口を有する取り外し可能なリング構造と、を備える装置。 - 前記取り外し可能なリング構造は、内側エッジ表面及び外側エッジ表面を有し、前記内側エッジ表面は前記プラテンの円周より大きい円周を有する、請求項6記載の装置。
- 前記取り外し可能なリング構造は、1つ以上の取り外し可能な固定器具部材を用いて、前記基板平面構造の背面に取り外し可能に取り付けられる、請求項6記載の装置。
- 前記取り外し可能なリング構造は、さらに、前記取り外し可能なリング構造の円周の少なくとも一部の中に形成される溝を含む、請求項6記載の装置。
- プラテンと、
該プラテンに連結される基板と、
前記プラテンの前に配置され、その中に開口を有し、前記基板の正面表面に同調する正面表面を有する基板平面構造と、
該基板平面構造の前記開口の中に配置され、その中に前記基板が配置される開口を有する取り外し可能なリング構造と、を備える装置。 - 前記取り外し可能なリング構造は、内側エッジ表面及び外側エッジ表面を有し、前記内側エッジ表面は前記プラテンの円周より大きい円周を有する、請求項10記載の装置。
- 前記取り外し可能なリング構造は、1つ以上の取り外し可能な固定器具部材を用いて、前記基板平面構造の背面に取り外し可能に取り付けられる、請求項10記載の装置。
- 前記取り外し可能なリング構造は、前記基板平面構造の背面に接触するレッジを含む、請求項10記載の装置。
- 前記レッジは、前記基板平面構造の前記背面の1つ以上のホールに同調する1つ以上のスルーホールを含み、少なくとも1つの取り外し可能な固定器具部材は、前記1つ以上のスルーホールの中に配置され、前記基板平面構造の前記背面の前記1つ以上のホールは、前記取り外し可能なリング構造を前記基板平面構造に取り外し可能に取り付ける、請求項10記載の装置。
- 前記取り外し可能なリング構造に連結され、前記取り外し可能なリング構造に電圧を加える電圧源をさらに備える、請求項10記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/340,603 US20180122670A1 (en) | 2016-11-01 | 2016-11-01 | Removable substrate plane structure ring |
US15/340,603 | 2016-11-01 | ||
PCT/US2017/058523 WO2018085110A1 (en) | 2016-11-01 | 2017-10-26 | Removable substrate plane structure ring |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2019534568A true JP2019534568A (ja) | 2019-11-28 |
JP2019534568A5 JP2019534568A5 (ja) | 2020-10-15 |
JP7016867B2 JP7016867B2 (ja) | 2022-02-07 |
Family
ID=62021790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019522522A Active JP7016867B2 (ja) | 2016-11-01 | 2017-10-26 | イオンビーム装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20180122670A1 (ja) |
JP (1) | JP7016867B2 (ja) |
KR (1) | KR102375180B1 (ja) |
CN (1) | CN109923655B (ja) |
TW (1) | TWI747986B (ja) |
WO (1) | WO2018085110A1 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0430419A (ja) * | 1990-05-25 | 1992-02-03 | Jeol Ltd | 材料保持機構 |
JP2005135867A (ja) * | 2003-10-31 | 2005-05-26 | National Institute Of Advanced Industrial & Technology | イオンビーム加工装置およびイオンビーム加工方法 |
JP2011014943A (ja) * | 1999-06-30 | 2011-01-20 | Lam Research Corp | エッチング速度の均一性を改良する技術 |
Family Cites Families (24)
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KR100238942B1 (ko) | 1997-01-06 | 2000-01-15 | 윤종용 | 반도체 식각설비의 하부전극 조립체 |
US6228563B1 (en) * | 1999-09-17 | 2001-05-08 | Gasonics International Corporation | Method and apparatus for removing post-etch residues and other adherent matrices |
US6589352B1 (en) * | 1999-12-10 | 2003-07-08 | Applied Materials, Inc. | Self aligning non contact shadow ring process kit |
US6350320B1 (en) * | 2000-02-22 | 2002-02-26 | Applied Materials, Inc. | Heater for processing chamber |
TW506234B (en) * | 2000-09-18 | 2002-10-11 | Tokyo Electron Ltd | Tunable focus ring for plasma processing |
KR20030028898A (ko) * | 2001-10-04 | 2003-04-11 | 삼성전자주식회사 | 건식 식각 장비의 웨이퍼 서셉터 |
US20040149226A1 (en) * | 2003-01-30 | 2004-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Substrate clamp ring with removable contract pads |
US7713841B2 (en) * | 2003-09-19 | 2010-05-11 | Micron Technology, Inc. | Methods for thinning semiconductor substrates that employ support structures formed on the substrates |
US7244336B2 (en) | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
KR20070009159A (ko) * | 2005-07-15 | 2007-01-18 | 삼성전자주식회사 | 플라즈마 식각설비의 웨이퍼 서셉터 |
KR20070036215A (ko) * | 2005-09-29 | 2007-04-03 | 주식회사 하이닉스반도체 | 반도체소자 제조용 건식식각장치 |
US8647484B2 (en) * | 2005-11-25 | 2014-02-11 | Applied Materials, Inc. | Target for sputtering chamber |
US7520969B2 (en) * | 2006-03-07 | 2009-04-21 | Applied Materials, Inc. | Notched deposition ring |
US8221602B2 (en) * | 2006-12-19 | 2012-07-17 | Applied Materials, Inc. | Non-contact process kit |
US8156892B2 (en) * | 2008-05-19 | 2012-04-17 | Novellus Systems, Inc. | Edge profiling for process chamber shields |
US8778603B2 (en) * | 2010-03-15 | 2014-07-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying substrate relief features using ion implantation |
WO2012024061A2 (en) * | 2010-08-20 | 2012-02-23 | Applied Materials, Inc. | Extended life deposition ring |
US8404048B2 (en) * | 2011-03-11 | 2013-03-26 | Applied Materials, Inc. | Off-angled heating of the underside of a substrate using a lamp assembly |
KR101967490B1 (ko) * | 2011-03-28 | 2019-04-09 | 도쿄엘렉트론가부시키가이샤 | 이온 에너지 분석기, 그 내부에서의 전기 신호화 방법, 그 제작 방법 및 작동 방법 |
KR101410984B1 (ko) * | 2013-03-12 | 2014-06-23 | 주식회사 선익시스템 | 기판 정렬장치의 샤프트 위치제어 구조 |
US10546733B2 (en) * | 2014-12-31 | 2020-01-28 | Applied Materials, Inc. | One-piece process kit shield |
KR102424818B1 (ko) * | 2015-05-27 | 2022-07-25 | 도쿄엘렉트론가부시키가이샤 | 플라즈마 처리 장치 및 포커스 링 |
US10103012B2 (en) * | 2015-09-11 | 2018-10-16 | Applied Materials, Inc. | One-piece process kit shield for reducing the impact of an electric field near the substrate |
-
2016
- 2016-11-01 US US15/340,603 patent/US20180122670A1/en not_active Abandoned
-
2017
- 2017-10-26 KR KR1020197015035A patent/KR102375180B1/ko active IP Right Grant
- 2017-10-26 CN CN201780067250.9A patent/CN109923655B/zh active Active
- 2017-10-26 WO PCT/US2017/058523 patent/WO2018085110A1/en active Application Filing
- 2017-10-26 JP JP2019522522A patent/JP7016867B2/ja active Active
- 2017-10-31 TW TW106137482A patent/TWI747986B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0430419A (ja) * | 1990-05-25 | 1992-02-03 | Jeol Ltd | 材料保持機構 |
JP2011014943A (ja) * | 1999-06-30 | 2011-01-20 | Lam Research Corp | エッチング速度の均一性を改良する技術 |
JP2005135867A (ja) * | 2003-10-31 | 2005-05-26 | National Institute Of Advanced Industrial & Technology | イオンビーム加工装置およびイオンビーム加工方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102375180B1 (ko) | 2022-03-16 |
WO2018085110A1 (en) | 2018-05-11 |
TW201820373A (zh) | 2018-06-01 |
CN109923655B (zh) | 2023-04-11 |
JP7016867B2 (ja) | 2022-02-07 |
TWI747986B (zh) | 2021-12-01 |
CN109923655A (zh) | 2019-06-21 |
KR20190067908A (ko) | 2019-06-17 |
US20180122670A1 (en) | 2018-05-03 |
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