JP2019504463A - 活性層、薄膜トランジスタ、アレイ基板及び表示装置、並びにそれらの製造方法 - Google Patents
活性層、薄膜トランジスタ、アレイ基板及び表示装置、並びにそれらの製造方法 Download PDFInfo
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- JP2019504463A JP2019504463A JP2017532605A JP2017532605A JP2019504463A JP 2019504463 A JP2019504463 A JP 2019504463A JP 2017532605 A JP2017532605 A JP 2017532605A JP 2017532605 A JP2017532605 A JP 2017532605A JP 2019504463 A JP2019504463 A JP 2019504463A
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- 239000010409 thin film Substances 0.000 title claims abstract description 232
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 47
- 238000005530 etching Methods 0.000 claims abstract description 55
- 238000004544 sputter deposition Methods 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 36
- HJZPJSFRSAHQNT-UHFFFAOYSA-N indium(3+) oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[In+3] HJZPJSFRSAHQNT-UHFFFAOYSA-N 0.000 claims description 75
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 62
- 238000000034 method Methods 0.000 claims description 50
- 238000000137 annealing Methods 0.000 claims description 33
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 31
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 238000001039 wet etching Methods 0.000 claims description 24
- 238000006056 electrooxidation reaction Methods 0.000 claims description 15
- 239000011787 zinc oxide Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 14
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 13
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- SAXBKEIWUBFTCT-UHFFFAOYSA-N [Hf+4].[O-2].[Zn+2].[O-2].[O-2] Chemical compound [Hf+4].[O-2].[Zn+2].[O-2].[O-2] SAXBKEIWUBFTCT-UHFFFAOYSA-N 0.000 claims description 7
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 5
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 3
- UBSJOWMHLJZVDJ-UHFFFAOYSA-N aluminum neodymium Chemical compound [Al].[Nd] UBSJOWMHLJZVDJ-UHFFFAOYSA-N 0.000 claims description 3
- ZTXUGHMGHRMVKB-UHFFFAOYSA-N aluminum;neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Nd+3] ZTXUGHMGHRMVKB-UHFFFAOYSA-N 0.000 claims description 3
- 229910000476 molybdenum oxide Inorganic materials 0.000 claims description 3
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 2
- 238000000059 patterning Methods 0.000 description 14
- 239000002253 acid Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- FWJPEOKFQUAQEQ-UHFFFAOYSA-N [Zr].[In] Chemical compound [Zr].[In] FWJPEOKFQUAQEQ-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229920001621 AMOLED Polymers 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 238000001552 radio frequency sputter deposition Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
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- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
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Abstract
Description
1本出願は、2016年1月15日に提出した中国特許出願No.201610027679.2の優先権を主張し、その内容が全て本出願に援用される。
本開示は一般的にフラットパネル表示技術に関し、特に、活性層、薄膜トランジスタ、アレイ基板及び表示装置、並びにそれらの製造方法に関する。
Claims (28)
- 直流(DC)スパッタリング処理により薄膜を形成する工程と、
前記薄膜をエッチングして活性層を形成する工程と、
を含み、
前記薄膜は、少なくとも約1×1017cm−3のキャリア濃度と少なくとも約20cm2/Vsのキャリア移動度を前記活性層に与えるように選択された材料からなる、薄膜トランジスタ内の活性層を製造する方法。 - 前記活性層における前記キャリア濃度は約1×1018cm−3以上であり、
前記活性層における前記キャリア移動度は約30cm2/Vs以上である、請求項1に記載の薄膜トランジスタ内の活性層を製造する方法。 - 前記材料は、酸化ジルコニウムインジウム、酸化ハフニウム亜鉛、酸化インジウムスズ、酸化亜鉛及びLnドープ酸化亜鉛から選択される一つ以上を含む、請求項1に記載の薄膜トランジスタ内の活性層を製造する方法。
- 前記酸化ジルコニウムインジウムは化学式がZrxIn100−xOyであり、ここで、0.1≦x≦20、y>0である、請求項3に記載の薄膜トランジスタ内の活性層を製造する方法。
- 前記薄膜はウェットエッチング処理によりエッチングされる、請求項4に記載の薄膜トランジスタ内の活性層を製造する方法。
- 前記ウェットエッチング処理は、
重量パーセント濃度が約40%から60%のリン酸中において約60nm/min以上のエッチング速度で酸化ジルコニウムインジウム薄膜をエッチングする工程と、
空気中において約150℃から220℃の間の温度で少なくとも約30分間酸化ジルコニウムインジウム薄膜をアニールする工程とを含み、
アニール後の前記酸化ジルコニウムインジウム薄膜のエッチング速度は10nm/min以下まで低下する、請求項5に記載の薄膜トランジスタ内の活性層を製造する方法。 - 前記ウェットエッチング処理は、
重量パーセント濃度が約50%のリン酸中において約60nm/min以上のエッチング速度で酸化ジルコニウムインジウム薄膜をエッチングする工程と、
空気中において約200℃の温度で少なくとも約30分間前記酸化ジルコニウムインジウム薄膜をアニールする工程とを含み、
アニール後の前記酸化ジルコニウムインジウム薄膜のエッチング速度は約5nm/min以下まで低下する、請求項5に記載の薄膜トランジスタ内の活性層を製造する方法。 - 直流(DC)スパッタリング処理により基板上にゲート電極薄膜を形成する工程と、
前記ゲート電極薄膜をエッチングしてゲート電極を形成する工程と、
前記ゲート電極上にゲート絶縁層を形成する工程と、
DCスパッタリング処理により前記ゲート絶縁層上に活性層薄膜を形成する工程と、
ウェットエッチング処理により前記活性層薄膜をエッチングした後、アニール処理により活性層を形成する工程と、
前記活性層上にDCスパッタリング処理によりソース/ドレイン薄膜を形成する工程と、
前記ソース/ドレイン薄膜をエッチングしてソース電極とドレイン電極を形成する工程とを含む、薄膜トランジスタの製造方法。 - 少なくとも約1×1017cm−3のキャリア濃度と、少なくとも約20cm2/Vsのキャリア移動度とを有する前記活性層が形成されるように、前記活性層薄膜を形成する前記DCスパッタリング処理に適した材料を選択する工程をさらに含む、請求項8に記載の薄膜トランジスタの製造方法。
- 前記活性層における前記キャリア濃度は約1×1018cm−3以上であり、
前記活性層における前記キャリア移動度は約30cm2/Vs以上である、請求項9に記載の薄膜トランジスタの製造方法。 - 前記材料は、酸化ジルコニウムインジウム、酸化ハフニウム亜鉛、酸化インジウムスズ、酸化亜鉛、Lnドープ酸化亜鉛、及びそれらの組合せから選択される、請求項9に記載の薄膜トランジスタの製造方法。
- 前記酸化ジルコニウムインジウムの化学式はZrxIn100−xOyであり、ここで、0.1≦x≦20、y>0である、請求項11に記載の薄膜トランジスタの製造方法。
- 前記活性層薄膜をエッチングする前記ウェットエッチング処理は、
重量パーセント濃度が約40%から60%のリン酸中において約60nm/min以上のエッチング速度で酸化ジルコニウムインジウム薄膜をエッチングする工程と、
空気中において約150℃と220℃の間の温度で少なくとも約30分間酸化ジルコニウムインジウム薄膜をアニールする工程とを含み、
アニール後の前記酸化ジルコニウムインジウム薄膜のエッチング速度は10nm/min以下まで低下する、請求項12に記載の薄膜トランジスタの製造方法。 - 前記活性層薄膜をエッチングする前記ウェットエッチング処理は、
重量パーセント濃度が約50%のリン酸中において約60nm/min以上のエッチング速度で酸化ジルコニウムインジウム薄膜をエッチングする工程と、
空気中において約200℃の温度で少なくとも約30分間前記酸化ジルコニウムインジウム薄膜をアニールする工程とを含み、
アニール後の前記酸化ジルコニウムインジウム薄膜のエッチング速度は約5nm/min以下まで低下する、請求項12に記載の薄膜トランジスタの製造方法。 - 前記ゲート絶縁層は電気化学酸化法により前記ゲート電極上に形成される、請求項8に記載の薄膜トランジスタの製造方法。
- 前記ゲート電極薄膜と前記ソース/ドレイン薄膜のエッチングには各々ウェットエッチング処理が含まれる、請求項8に記載の薄膜トランジスタの製造方法。
- 少なくとも約1×1017cm−3のキャリア濃度と、少なくとも約20cm2/Vsのキャリア移動度とを活性層に与える直流スパッタリング処理された材料からなる活性層を含み、
前記薄膜トランジスタではエッチング停止層の配置を省略する、薄膜トランジスタ。 - 前記活性層における前記キャリア濃度は約1×1018cm−3以上であり、
前記活性層における前記キャリア移動度は約30cm2/Vs以上である、 請求項17に記載の薄膜トランジスタ。 - 前記直流スパッタリング処理された材料は、酸化ジルコニウムインジウム、酸化ハフニウム亜鉛、酸化インジウムスズ、酸化亜鉛及びLnドープ酸化亜鉛から選択される一つ以上を含む、請求項17に記載の薄膜トランジスタ。
- 前記酸化ジルコニウムインジウムの化学式はZrxIn100−xOyであり、ここで、0.1≦x≦20、y>0である、請求項19に記載の薄膜トランジスタ。
- 前記基板上のゲート電極と、
前記ゲート電極を覆うゲート絶縁層と、
ソース電極とドレイン電極とをさらに含み、
前記活性層は前記ゲート絶縁層上に設けられ、
前記ソース電極と前記ドレイン電極は前記活性層上に設けられ、両方とも前記活性層と接触する、請求項17に記載の薄膜トランジスタ。 - 前記ゲート電極の厚さは約100nmから800nmであり、
前記ゲート絶縁層の厚さは約30nmから600nmであり、
前記活性層の厚さは約10nmから200nmであり、
前記ソース電極と前記ドレイン電極の厚さは約100nmから1000nmである、請求項21に記載の薄膜トランジスタ。 - 前記ゲート電極は、アルミニウム、アルミニウム合金、タンタル、タンタル合金及びモリブデンを含む一つ以上の材料からなる、請求項21に記載の薄膜トランジスタ。
- 前記ゲート絶縁層は、酸化アルミニウム、酸化モリブデン、酸化タンタル、酸化アルミニウムネオジム及びそれらの組合せから選択される絶縁酸化物からなる、請求項21に記載の薄膜トランジスタ。
- 前記ソース電極と前記ドレイン電極は、アルミニウム、モリブデン、タンタル及びアルミニウム−ネオジム合金から選択される一つ以上の導電性の金属からなる、請求項21に記載の薄膜トランジスタ。
- 前記基板はバッファ層又は水・酸素バリア層によりコーティングされる、請求項21に記載の薄膜トランジスタ。
- 請求項17から26のいずれか1項に記載の薄膜トランジスタを含む、アレイ基板。
- 請求項27に記載の前記アレイ基板を含む、表示装置。
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