JP2019125643A - Semiconductor element, mounting substrate, semiconductor device and method of manufacturing the semiconductor device - Google Patents

Semiconductor element, mounting substrate, semiconductor device and method of manufacturing the semiconductor device Download PDF

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Publication number
JP2019125643A
JP2019125643A JP2018004112A JP2018004112A JP2019125643A JP 2019125643 A JP2019125643 A JP 2019125643A JP 2018004112 A JP2018004112 A JP 2018004112A JP 2018004112 A JP2018004112 A JP 2018004112A JP 2019125643 A JP2019125643 A JP 2019125643A
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Prior art keywords
semiconductor
package
substrate
mounted
hole
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JP2018004112A
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Japanese (ja)
Inventor
大悟 坂元
Daigo Sakamoto
大悟 坂元
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ソニーセミコンダクタソリューションズ株式会社
Sony Semiconductor Solutions Corp
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73257Bump and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA

Abstract

A thermal conductivity between a semiconductor package and a semiconductor device is improved. A semiconductor device includes a semiconductor chip, a package substrate, and a sealing portion. The package board has semiconductor chips mounted on the front surface with a predetermined gap and is mounted on the mounting board on the back surface, which is a surface different from the front surface, and penetrates the area where the semiconductor chips are mounted through the front surface and the back surface. Has holes. The sealing portion hermetically seals the semiconductor chip together with the package substrate to form a semiconductor package. During mounting on a substrate, the gas enclosed in the semiconductor package is discharged through the through hole, and then the heat dissipation member in a molten state is sucked up through the through hole and placed in a predetermined gap. [Selection diagram] Figure 2

Description

  The present technology relates to a semiconductor device, a mounting substrate, a semiconductor device, and a method of manufacturing the semiconductor device. More specifically, the present invention relates to a semiconductor device configured in a semiconductor package, a mounting substrate on which the semiconductor device is mounted, a semiconductor device having a mounting substrate on which the semiconductor device is mounted, and a method of manufacturing the semiconductor device.

  2. Description of the Related Art Conventionally, a semiconductor element in which a semiconductor chip is hermetically sealed in a hollow package is used. For example, in an imaging device to which light from a subject is irradiated, the imaging device chip is sealed in a hollow semiconductor package having a covering portion made of glass or the like. When reflow soldering is performed on a semiconductor element configured of such a hollow package, the gas inside the package may expand due to heating, the pressure inside the package may increase, and the semiconductor package may be broken. Therefore, a semiconductor element is used in which a vent is disposed in a substrate constituting a semiconductor package and the expanded gas is discharged to reduce the pressure inside the semiconductor package to prevent the semiconductor package from being damaged.

  As such a semiconductor element, for example, there is proposed a semiconductor device having a recess and having a concave package in which the solid-state imaging device is disposed in the concave and a covering section that seals the concave package. In this semiconductor device, a vent is arranged at the bottom of the above-mentioned concave package, and the gas in the expanded inner space is discharged through the vent during reflow soldering. Thereafter, the vent is sealed by solder disposed outside the semiconductor device, whereby the semiconductor device is hermetically sealed (for example, see Patent Document 1).

JP 2016-111270

  The above-described prior art has a problem that heat is not sufficiently released when the solid-state imaging device generates heat. 2. Description of the Related Art In recent years, semiconductor devices such as imaging devices have an increased amount of heat generation as their operating speed and integration degree increase. Therefore, it is necessary to sufficiently cool the semiconductor element through the semiconductor package. However, in the above-mentioned prior art, since the semiconductor device is hermetically sealed in the hollow package, there is a problem that the thermal conductivity between the surface of the semiconductor device and the semiconductor package is low, and the temperature of the semiconductor device rises.

  The present technology has been made in view of the above-described problems, and aims to improve the thermal conductivity between the semiconductor package and the semiconductor element in a semiconductor element hermetically sealed in a hollow package.

  The present technology has been made to solve the above-mentioned problems, and a first aspect thereof relates to a semiconductor chip, a semiconductor chip mounted on the surface with a predetermined gap therebetween, and a surface on which the semiconductor chip is mounted. A package substrate is mounted on a mounting substrate on the back surface which is a different surface, and the semiconductor chip is hermetically sealed together with the package substrate and a package substrate having through holes penetrating the front and back surfaces in the region where the semiconductor chip is mounted. And a sealing portion for forming a semiconductor package, and the encapsulated heat of the semiconductor package is discharged through the through hole at the time of the substrate mounting, and the heat radiation member in a molten state is sucked up through the through hole. A semiconductor element disposed in the predetermined gap. This brings about the effect that the heat dissipation member is disposed in the gap between the semiconductor chip and the package substrate. An improvement in the thermal conductivity between the semiconductor chip and the mounting substrate is assumed.

  In the first aspect, the heat dissipation member may be formed of a member having a melting point lower than the heating temperature at the time of mounting the substrate. This brings about the effect that the heat dissipation member in the molten state is sucked up through the through hole even after heating in substrate mounting.

  In the first aspect, the heat dissipation member may be made of solder. This brings about the effect that the solder is disposed in the gap between the semiconductor chip and the package substrate.

  In addition, in the first aspect, the package substrate may further include a heat radiation member holding portion for holding the heat radiation member in a molten state sucked up through the through hole. This brings about the effect | action that the thermal radiation member of the molten state hold | maintained at the thermal radiation member holding part is sucked up via a through-hole.

  In addition, in the first aspect, the package substrate may include the heat dissipating member holding portion configured of a pad. This brings about the effect | action that the thermal radiation member of a molten state is hold | maintained by a pad.

  In addition, in the first aspect, the package substrate includes the heat radiation member holding portion configured of an adhesion region adhering to the heat radiation member in the molten state and a non-adhesion region not adhering to the heat radiation member in the molten state. It is also good. Thus, the heat dissipating member is held by the region where the heat dissipating member is attached in the molten state and the region where the heat dissipating member is not attached in the molten state.

  In the first aspect, the package substrate may further include a gas discharge path when the enclosed gas of the semiconductor package is discharged through the through hole. As a result, the enclosed gas of the semiconductor package is discharged through the through hole and the gas discharge passage.

  Further, according to a second aspect of the present technology, the semiconductor chip is mounted on the back surface which is a surface different from the front surface while the semiconductor chip is mounted on the front surface with a predetermined gap therebetween, and the semiconductor chip is mounted A package substrate having through holes penetrating the front surface and the back surface in a region where the semiconductor chip is to be sealed, and a sealing portion for hermetically sealing the semiconductor chip together with the package substrate to form a semiconductor package; After the enclosed gas of the semiconductor package is discharged through the through hole, the heat dissipating member in a molten state is sucked through the through hole, and the semiconductor element disposed in the predetermined gap is mounted on the substrate, It is a mounting substrate for supplying the heat dissipating member in the molten state which is sucked up through the through hole. As a result, the heat dissipating member is disposed in the gap between the semiconductor chip and the package substrate and in the through hole of the package substrate.

  In addition, in the second aspect, the heat dissipating member holding portion for retaining the heat dissipating member in the molten state for supplying may be provided. This brings about the effect | action that the thermal radiation member of the molten state hold | maintained at the thermal radiation member holding part is sucked up via a through-hole.

  In the second aspect, the heat dissipation member holding portion may be constituted by a pad. This brings about the effect | action that the thermal radiation member of a molten state is hold | maintained by a pad.

  Further, in the second aspect, the heat radiation member holding portion may be configured by an adhesion area adhering to the heat radiation member in the molten state and a non-adhesion area not adhering to the heat radiation member in the molten state. Thus, the heat dissipating member is held by the region where the heat dissipating member is attached in the molten state and the region where the heat dissipating member is not attached in the molten state.

  In the second aspect, the mounting substrate may include a gas discharge path when the sealed gas of the semiconductor package is discharged through the through hole. As a result, the enclosed gas of the semiconductor package is discharged through the through hole and the gas discharge passage.

  In a third aspect of the present technology, the semiconductor chip is mounted on the front surface of the semiconductor chip with a predetermined gap between the semiconductor chip and the back surface being a surface different from the front surface, and the semiconductor chip is mounted. A package substrate having through holes penetrating the front surface and the back surface in the area, a sealing portion sealing the semiconductor chip together with the package substrate to form a semiconductor package, and the semiconductor mounting on the substrate After the enclosed gas of the package is discharged through the through hole, it is sucked through the through hole in the molten state, and is mounted on the heat dissipation member disposed in the predetermined gap, the package substrate and the substrate and mounted. And a mounting substrate for supplying the heat dissipating member in the molten state to be sucked up through the through hole. This brings about the effect that the heat dissipation member is disposed in the gap between the semiconductor chip and the package substrate. An improvement in the thermal conductivity between the semiconductor chip and the mounting substrate is assumed.

  Further, according to a fourth aspect of the present technology, in the semiconductor chip, the semiconductor chip is mounted on the surface with a predetermined gap, and is mounted on the mounting substrate on the back surface which is a surface different from the surface; A semiconductor device comprising: a package substrate having through holes penetrating the front and back surfaces in a region on which a chip is mounted; and a sealing portion for hermetically sealing the semiconductor chip together with the package substrate to form a semiconductor package An enclosed gas discharging step of discharging an enclosed gas of the semiconductor package through the through hole by arranging on a mounting substrate and heating; and cooling the semiconductor element after the enclosed gas is discharged. And a heat dissipating member wicking step of sucking up the heat dissipating member in a molten state through the through hole and arranging the heat dissipating member in the predetermined gap. Device is a method of manufacturing. This brings about the effect that the heat dissipation member is disposed in the gap between the semiconductor chip and the package substrate. An improvement in the thermal conductivity between the semiconductor chip and the mounting substrate is assumed.

  According to the present technology, the excellent effect of improving the thermal conductivity between the semiconductor package and the semiconductor element in the semiconductor element hermetically sealed in the hollow package is exhibited.

It is a figure showing an example of composition of a semiconductor device concerning an embodiment of this art. It is a figure showing an example of composition of an image sensor concerning a 1st embodiment of this art. It is a figure showing an example of composition of a package board concerning a 1st embodiment of this art. It is a figure showing an example of composition of a mounting board concerning a 1st embodiment of this art. It is a figure showing an example of a temperature profile at the time of soldering concerning an embodiment of this art. It is a figure showing an example of a manufacturing method of an imaging device concerning a 1st embodiment of this art. It is a figure showing an example of a manufacturing method of an imaging device concerning a 1st embodiment of this art. It is a figure showing an example of composition of an image sensor concerning the modification of a 1st embodiment of this art. It is a figure showing an example of composition of an image sensor concerning a 2nd embodiment of this art. It is a figure showing an example of composition of a mounting board concerning a 3rd embodiment of this art. It is a figure showing an example of composition of a mounting board concerning a 4th embodiment of this art. It is a figure showing an example of a manufacturing method of an imaging device concerning a 4th embodiment of this art. It is a figure showing an example of a manufacturing method of an imaging device concerning a 5th embodiment of this art. It is a figure showing an example of composition of a mounting board concerning a 6th embodiment of this art. It is a figure showing an example of composition of a package board concerning a 7th embodiment of this art. 1 is a cross-sectional view showing a configuration example of a solid-state imaging device to which the technology according to the present disclosure can be applied. It is a block diagram showing an example of rough composition of a camera to which this art can be applied. It is a figure which shows an example of a schematic structure of an endoscopic surgery system. It is a block diagram which shows an example of a function structure of a camera head and CCU. It is a block diagram showing an example of rough composition of a vehicle control system. It is explanatory drawing which shows an example of the installation position of a vehicle exterior information detection part and an imaging part.

Next, a mode for carrying out the present technology (hereinafter, referred to as an embodiment) will be described with reference to the drawings. In the following drawings, the same or similar parts are given the same or similar reference numerals. However, the drawings are schematic, and the ratio of dimensions of each part and the like do not necessarily match the actual ones. Moreover, it is a matter of course that parts having different dimensional relationships and ratios among the drawings are included. The embodiments will be described in the following order.
1. First Embodiment Second embodiment 3. Third embodiment 4. Fourth embodiment 5. Fifth Embodiment 6. Sixth Embodiment Seventh embodiment 8. Application example to solid-state imaging device 9. Application example to camera 10. Application example to endoscopic surgery system 11. Application example to mobile

<1. First embodiment>
[Configuration of Semiconductor Device]
FIG. 1 is a diagram illustrating a configuration example of an imaging device according to an embodiment of the present technology. The imaging device 1 of FIG. 1 is an example of a semiconductor device described in the claims. Hereinafter, the semiconductor device will be described by taking the imaging device 1 as an example. The imaging device 1 of FIG. 1 includes an imaging element 10 and a mounting substrate 50.

  The imaging device 10 is configured by an imaging device chip which is a semiconductor chip and a semiconductor package which seals the imaging device chip. As described later, the imaging device 10 includes a semiconductor package configured in a hollow package. As described later, the imaging device 10 is configured of the seal glass 11, the imaging device chip 12, and the package substrate 20. The imaging device 10 is an example of the semiconductor device described in the claims.

  The mounting substrate 50 is a substrate on which the imaging device 10 is mounted. The mounting of the imaging element 10 can be performed by, for example, solder connection. In addition, electronic components other than the imaging device 10 can be further mounted on the mounting substrate 50.

[Configuration of imaging device]
FIG. 2 is a diagram illustrating a configuration example of an imaging element according to the first embodiment of the present technology. The figure is a cross-sectional view showing a configuration example of the imaging device 1 including the mounting substrate 50. The configuration of the imaging device 10 will be described using FIG.

  The imaging device 10 includes a seal glass 11, an imaging device chip 12, and a package substrate 20. As will be described later, in the imaging device 10 of the figure, the solder 40 is disposed between the imaging device chip 12 and the package substrate 20.

  The seal glass 11 is a light-transmitting lid material. The seal glass 11 constitutes a hollow semiconductor package 100 together with a package substrate 20 described later. In addition, the sealing glass 11 is an example of the sealing part as described in a claim.

  The imaging element chip 12 is a semiconductor chip for imaging an object. The image sensor chip 12 has pixels for generating an image signal based on incident light arranged in a two-dimensional grid, generates and outputs an image signal according to light from an object incident through the seal glass 11.

  The package substrate 20 is a substrate on which the imaging element chip 12 is mounted. The package substrate 20 of the same figure is provided with a wall. The semiconductor package 100 is formed by bonding to the seal glass 11 via an adhesive (not shown) at the top of the wall. This semiconductor package hermetically seals the imaging element chip 12 and can prevent the entry of moisture and foreign matter from the outside.

  The imaging element chip 12 is mounted on the bottom surface of the package substrate 20 by being die-bonded using the adhesive 14. At this time, a gap for disposing a solder 40 described later is provided between the imaging element chip 12 and the package substrate 20. This gap can be, for example, 20 μm in size. In order to provide a gap of a desired size, for example, a bead of resin can be disposed between the imaging chip 12 and the package substrate 20. Moreover, such a bead can also be contained in the adhesive 14 as a filler. A pad 22 is disposed on the bottom surface of the package substrate 20 and is electrically connected to the imaging element chip 12 by a bonding wire 13 (wire bonding).

  Further, pads 24 are disposed on the back surface of the package substrate 20. The pad 24 is soldered to the pad 51 of the mounting substrate 50 by the solder 59 in FIG. 1 when the imaging device 10 and the mounting substrate 50 are mounted. This soldering can be performed, for example, by reflow soldering. The package substrate 20 is formed, for example, by laminating a plurality of wiring layers and insulating layers, and transmits an electrical signal between the pads 22 and 24. A metal such as copper can be used for the wiring layer. Further, resin or ceramic can be used for the insulating layer.

  A through hole 31 is disposed in the package substrate 20 immediately below the imaging element chip 12. The through hole 31 is a hole penetrating from the front surface to the back surface of the package substrate 20, and is a hole connecting the inside and the outside of the hollow semiconductor package 100. During the above-described soldering, the imaging device 10 is heated to a temperature exceeding the melting point of the solder 59. The enclosed gas 19 inside the semiconductor package 100 is expanded by heating, and a pressure difference is generated inside and outside the semiconductor package 100. Since the above-mentioned through hole 31 is disposed in the semiconductor package 100 in the same figure, the enclosed gas 19 is discharged to the outside of the semiconductor package 100 through the through hole 31. Thus, damage to the semiconductor package 100 due to an increase in the internal pressure of the semiconductor package 100 can be prevented.

  When the soldering by the solder 59 is completed and the imaging device 1 is cooled to room temperature, the internal pressure of the semiconductor package 100 is decreased, and a differential pressure in the opposite direction to that in the above-described heating is generated. At this time, by disposing the melted solder 40 in the vicinity of the through hole 31 on the back surface of the package substrate 20, the solder 40 is sucked into the semiconductor package 100 through the through hole 31 and the package substrate 20 and the imaging device chip Intrude into the 12 gaps. When the temperature of the imaging device 1 is further lowered, the sucked solder 40 solidifies and is disposed in the through hole 31 and in the space between the package substrate 20 and the imaging element chip 12. Thereby, the through hole 31 is closed, and the inside of the semiconductor package 100 can be airtight. Further, since the solder 40 is disposed in the gap between the package substrate 20 and the imaging device chip 12, the thermal conductivity between the package substrate 20 and the imaging device chip 12 is improved. This is because the solder 40 which is a metal has a thermal conductivity higher than that of the filling gas 19. The through holes 31 in which the solder 40 is disposed serve as a heat radiation path of the package substrate 20, and constitute so-called thermal vias. Therefore, the thermal conductivity of the package substrate 20 can be improved.

  For the solders 40 and 59, solders having different melting points can be used. For example, for the solder 40, a solder having a melting point lower than that of the solder 59 can be used. This is because the period from the start to the end of the suction of the solder 40 can be extended, and a sufficient amount of the solder 40 can be sucked. Further, by raising the soldering temperature by the solder 59, the differential pressure inside and outside the semiconductor package 100 can be increased, and the amount of suction of the solder 40 can be increased. The temperature difference between the melting points of the solders 40 and 59 is preferably 35 ° C. or more. For the solder 59, for example, tin (Sn) -silver (Ag) eutectic solder can be used. For the solder 40, for example, lead (Pb) -tin (Sn) eutectic solder can be used. The solders 40 and 59 can be disposed by processing into a paste and printing on the surfaces of the pads 52 and 51.

  In the package substrate 20 of the same figure, pads 32 and 34 are respectively disposed on the front and back surfaces of the region where the through holes 31 are formed. Further, the metal film 33 is disposed on the wall surface of the through hole 31 in the package substrate 20 of FIG. For the pads 32 and 34 and the metal film 33, a metal having high wettability with the solder 40, for example, copper can be used. Thereby, the solder 40 after solidification and the package substrate 20 in the through hole 31 can be brought into close contact, and the semiconductor package 100 with high airtightness can be configured. Moreover, the resistance at the time of suction of the solder 40 can also be reduced. The pads 32 and 34 and the metal film 33 can be formed by plating.

  A protective film 23 is disposed on the surface of the package substrate 20. The protective film 23 protects the surface of the package substrate 20 and limits the penetration range of the sucked solder 40 described above. By arranging this protective film 23, it becomes possible to arrange the solder 40 at a predetermined position. For the protective film 23, a film of alumina or the like, or a film of a resin such as a solder resist can be used.

  In addition, in order to arrange a desired amount of solder 40 in the gap between the package substrate 20 and the imaging element chip 12, it is necessary to adjust the temperature of soldering. This is to equalize the amount of the enclosed gas 19 discharged from the semiconductor package 100 and the amount of the solder 40 disposed in the gap between the package substrate 20 and the imaging device chip 12.

  The mounting substrate 50 in the figure is provided with pads 51 and 52. The pad 51 is disposed to face the pad 24 of the package substrate 20 and is connected by the solder 59. The pads 52 are disposed to face the pads 34 of the package substrate 20. The pad 52 holds the solder 40 in a molten state together with the pad 34. The pad 52 and the pad 34 constitute a heat dissipating member holding portion 60. Details of the configuration of the heat radiation member holding unit 60 will be described later.

  The solder 40 is an example of the heat dissipation member described in the claims. Also, for example, a resin in which particles of silver (Ag) are dispersed can be used instead of the solder 40.

[Package board configuration]
FIG. 3 is a view showing a configuration example of a package substrate according to the first embodiment of the present technology. A and b in the same figure represent the structure of the surface of package substrate 20, and the back, respectively. As described above, the through holes 31 are disposed on the front surface and the back surface of the package substrate 20.

  In a of the drawing, on the surface of the package substrate 20, a protective film 23, pads 22 and 32 and an adhesive 14 are disposed. In addition, the dotted line of a in the same figure represents the area | region where the image pick-up element chip 12 is mounted. In the protective film 23, an opening 25 is formed in the central portion. The range in which the solder 40 is disposed is limited by the opening 25. The adhesive 14 is disposed between the opening 25 of the protective film 23 and the end of the region in which the imaging element chip 12 is disposed. The adhesive 14 is disposed with a gap 26 therebetween. The gap 26 is a passage for discharging the enclosed gas 19 described above.

  Pads 34 and 24 are disposed on the back surface of the package substrate 20 at b in FIG. The pads 24 can be arranged at a larger pitch than the pads 22 described above. In this case, the package substrate 20 constitutes an interposer substrate.

[Mounting board configuration]
FIG. 4 is a diagram showing a configuration example of a mounting board according to the first embodiment of the present technology. The mounting substrate 50 in the figure is provided with pads 51 and 52. The pads 51 and 52 can be made of metal such as copper as the pad 24 and the like. Also, the pad 52 is disposed at a position facing the pad 34 of the package substrate 20. As described above, the pad 52 and the pad 34 constitute the heat dissipating member holding portion 60, and hold and hold the solder 40 in a molten state. The held molten solder 40 is supplied in the vicinity of the through hole 31 when the heated imaging device 1 is cooled to room temperature, and is sucked into the semiconductor package 100.

  The pad 52 is provided with a fan-shaped notch 53. The notch 53 is a region where the metal forming the pad 52 is not disposed, and the surface of the insulating material forming the mounting substrate 50 is exposed. Since the metal of the pad 52 is not disposed in the notch 53, more molten solder 40 can be held. In addition, the notch 53 in the same figure also functions as a gas discharge path after the enclosed gas 19 at the time of soldering is discharged from the semiconductor package 100.

  The dotted circle in the figure represents the position of the through hole 31 of the package substrate 20, and the dashed dotted circle represents the range in which the solder 40 is to be disposed before the reflow soldering. The solder 40 can be disposed on the mounting substrate 50 by screen printing, for example. At this time, the solder 40 is formed in a paste form and is printed to a predetermined thickness. The thickness of the solder 40 needs to be adjusted in accordance with the amount of the solder 40 disposed inside the semiconductor package 100.

  The solder 59 is also disposed on the surface of the pad 51 and has a desired thickness. As described later, in the reflow soldering of the imaging device 1, the solder 59 is melted and the imaging element 10 settles on the mounting substrate 50 side. As a result, the distance between the package substrate 20 and the mounting substrate 50 of the imaging device 10 is reduced, and the molten solder 40 is excessively disposed between the package substrate 20 and the mounting substrate 50. The excess solder 40 is supplied to the semiconductor package 100 through the through holes 31. That is, the thickness of the solder 59 disposed on the surface of the pad 51 needs to be adjusted in accordance with the amount of the solder 40 disposed inside the semiconductor package 100. The thickness of the solder 59 can be, for example, 0.2 mm.

  The above-mentioned excess solder 40 adheres to the pad 52 and the pad 34 and is stored in the area of the notch 53 of the pad 52. Thereby, the solder 40 in a molten state is held between the pad 52 and the pad 34 and disposed in the vicinity of the through hole 31. Further, since the area of the notched portion 53 is a relatively narrow area sandwiched between the pads 52 and 34, it is possible to prevent the solder 40 in the molten state from flowing out to the outside of the heat dissipating member holding portion 60. Thus, the amount of holding of the solder 40 in the molten state is improved by arranging the pad 52, which is an area that adheres to the solder 40 in the molten state, and the notch 53, which is a region that does not adhere to the solder 40 in the molten state. It can be done.

  On the other hand, when the solder 40 is absorbed by the semiconductor package 100, the solder 40 does not adhere to the surface of the insulating material constituting the mounting substrate 50 in the notch 53, so the solder 40 remaining in the region of the notch 53 Can be reduced. As a result, when the solder 40 is sucked into the semiconductor package 100, more solder 40 can be supplied. Here, the area that adheres to the molten solder 40 and the area that does not adhere to the solder 40 are referred to as an adhered area and a non-adhesive area, respectively.

  The configurations of the package substrate 20 and the mounting substrate 50 are not limited to the examples of FIGS. 3 and 4. For example, either the pad 34 or the pad 52 may be omitted.

  In addition, the notch part 53 is an example of the gas discharge path as described in a claim.

[Reflow soldering]
FIG. 5 is a view showing an example of a temperature profile at the time of soldering according to the embodiment of the present technology. The figure is a diagram showing the relationship between time and temperature when soldering the imaging device 10 to the mounting substrate 50. In the figure, the vertical axis represents temperature, and the horizontal axis represents elapsed time. Soldering can be performed by charging the imaging device 1 into a reflow furnace. In the figure, T1 is a preheating start temperature. T2 is the melting point of the solder 40. T3 is the melting point of the solder 59. T4 is the maximum temperature in reflow soldering. The difference between the temperatures T4 and T3 is preferably about 30.degree. 150, 183, 221, and 250 ° C. can be adopted as T1 to T5, respectively. In addition, T0 represents room temperature. As shown in the figure, reflow soldering can be performed by the five steps of (1) to (5).

[Method of manufacturing imaging device]
6 and 7 are diagrams showing an example of a method of manufacturing an imaging device according to the first embodiment of the present technology. In FIG. 6, a is a view schematically showing the image pickup device 1 before reflow soldering, the left side shows a cross section of the image pickup device 1, and the right side shows the pad 52 of the mounting substrate 50. The state of the solder 40 arranged is shown. B and c in FIG. 6 and d to f in FIG. 7 are diagrams showing the state of the imaging device 1 during reflow soldering, and correspond to the five steps described in FIG. 5, respectively. The broken line in the right side of FIGS. 6 and 7 represents the position of the pad 52.

  In the step (1), the temperature is raised from room temperature T0 to the preheating temperature start temperature T1, and then gradually heated until the melting point T2 of the solder 40 is reached. The said process corresponds to a preheating process, and is a process performed for equalization | homogenization of the temperature of the imaging device 1, activation of a flux, etc. (b in FIG. 6). At this time, the enclosed gas 19 inside the semiconductor package 100 expands as the temperature of the imaging device 10 rises, and is discharged to the outside of the semiconductor package 100 through the through holes 31. The dotted arrow b in FIG. 6 represents the discharge of the enclosed gas 19.

  In the step (2), the temperature is heated from T 2 to the melting point T 3 of the solder 40. By this process, the solder 40 is melted. The discharge of the enclosed gas 19 continues as the temperature rises (c in FIG. 6).

  In step (3), the temperature is heated from T3 to a maximum temperature T4. By this process, the solder 59 is melted in addition to the solder 40. Therefore, the imaging device 10 sinks to the side of the mounting substrate 50 by its own weight, and the solders 40 and 59 in the molten state are out of the respective pad portions. Also in this case, the discharge of the enclosed gas 19 is continued as the temperature rises (d in FIG. 7).

  In step (4), the temperature is reduced from T4 to T2. Due to the decrease in temperature, the enclosed gas 19 which has been expanded starts to contract, and the discharge of the enclosed gas 19 from the through holes 31 is completed. As a result, the flow of the enclosed gas 19 in the notch 53 which is a gas discharge path is eliminated, so the solder 40 in the molten state moves and blocks the through hole 31. Furthermore, the differential pressure between the semiconductor package 100 and the outside air causes the solder 40 to be drawn into the interior of the semiconductor package 100 through the through holes 31 (e in FIG. 7). The solid arrows in e in FIG. 7 represent the solder 40 to be sucked up. The suctioned solder 40 spreads in the gap between the imaging device chip 12 and the package substrate 20. When the temperature becomes T3 or lower, the solder 59 solidifies, and the imaging element 10 is fixed to the mounting substrate 50.

  In step (5), the temperature is reduced from T2 to T0. The solder 40 solidifies to close the through holes 31 and is disposed in the gap between the imaging element chip 12 and the package substrate 20. Steps (1) to (3) are steps in which the temperature of the imaging device 1 is increased, and the enclosed gas 19 is discharged from the semiconductor package 100. Step (4) is a step in which the solder 40 is cooled while maintaining a molten state, and is a step in which the solder 40 is absorbed into the semiconductor package 100. Steps (1) to (3) are an example of the enclosed gas discharging step described in the claims. Step (4) is an example of the heat sink suction step according to the claims.

  By the steps described above, soldering mounting of the imaging element 10 on the mounting substrate 50 can be performed, and the imaging device 1 can be manufactured. In the step (4), it is necessary to remove the oxide film on the surface of the solder 40. This is for the purpose of suctioning the solder 40 smoothly. This can be done, for example, by introducing a reducing atmosphere into the reflow furnace. For example, hydrogen can be introduced by flowing nitrogen containing nitrogen into a reflow furnace.

[Modification]
Although the above-mentioned imaging element 10 used the package substrate 20 provided with the wall part, the flat package substrate 20 may be used.

  FIG. 8 is a diagram illustrating a configuration example of an imaging element according to a modification of the first embodiment of the present technology. The imaging device 10 of this figure differs from the imaging device 10 described in FIG. 2 in that the flat package substrate 20 is used and the frame 27 is further provided. The frame 27 constitutes the wall of the semiconductor package 100. For the frame 27, a frame made of metal or resin can be used. By using the flat package substrate 20 and the frame 27, it is possible to easily form a region for mounting the imaging device chip 12.

  As described above, by arranging the through holes 31 in the package substrate 20 and discharging the enclosed gas 19 in the semiconductor package and sucking the solder 40 through the through holes 31, the solder 40 can be taken as an imaging element chip It can be disposed in the gap between 12 and the package substrate 20. Also, the thermal via can be formed by the through hole 31 and the solder 40. Thereby, the thermal conductivity between the imaging element chip 12 and the mounting substrate 50 in the imaging device 1 can be improved.

<2. Second embodiment>
The imaging device 1 according to the first embodiment described above uses the package substrate 20 having one through hole 31. On the other hand, the imaging device 1 according to the second embodiment of the present technology differs from the above-described first embodiment in that the package substrate 20 having the two or more through holes 31 is used.

[Configuration of imaging device]
FIG. 9 is a diagram illustrating an example of a configuration of an imaging element according to a second embodiment of the present technology. The imaging device 1 in the same figure differs from the imaging device 10 described in FIG. 2 in that the imaging device 1 includes a plurality of thermal vias formed of solder 40.

  The package substrate 20 of the same figure is provided with two through holes 31 in which the pads 32 and the like are respectively arranged. The solder 40 is sucked into the interior of the semiconductor package 100 via each of the through holes 31 and disposed between the imaging element chip 12 and the package substrate 20. The solder 40 can be disposed in a relatively wide range between the imaging device chip 12 and the package substrate 20, and the thermal conductivity between the imaging device chip 12 and the package substrate 20 can be improved. In addition, since the solder 40 is disposed in each of the two through holes 31 to form a thermal via, the thermal conductivity of the package substrate 20 can be improved. The configuration of the imaging device 10 is not limited to this example. For example, a package substrate 20 having three or more through holes 31 can be used.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the first embodiment of the present technology, and thus the description thereof is omitted.

  As described above, the imaging device 1 according to the second embodiment of the present technology includes the imaging element chip 12 and the package by providing the two or more through holes 31 and the solder 40 disposed in the through holes 31. The thermal conductivity between the substrate 20 as well as the package substrate 20 can be further improved.

<3. Third embodiment>
The imaging device 10 according to the first embodiment described above uses the mounting substrate 50 including the pad 52 having one notch 53. On the other hand, the imaging device 10 according to the third embodiment of the present technology differs from the first embodiment described above in that the mounting substrate 50 having two or more notches is used.

[Mounting board configuration]
FIG. 10 is a diagram illustrating an example of a configuration of a mounting board according to a third embodiment of the present technology. The figure is a diagram showing a region where the pad 52 is disposed on the surface of the mounting substrate 50 to which the imaging element 10 is soldered. The mounting substrate 50 in the same figure differs from the mounting substrate 50 described in FIG. 4 in that the mounting substrate 50 has a plurality of notches 53. These notches 53 constitute a gas discharge passage and a non-adhesion region. In the figure, a is a diagram showing an example having two notches 53, and b in the same figure is a diagram showing an example having four notches 53. The dashed-dotted line in the figure represents the range in which the solder 40 is disposed before the reflow soldering, as in FIG. 4.

  As shown in the drawing, the solder 40 is disposed in a region adjacent to the pad 52 in the notch 53 in addition to the region overlapping the pad 52. The central portion of the notch 53 is a region in which the solder 40 is not disposed, and is a region which becomes a discharge path of the enclosed gas 19. As described above, the mounting substrate 50 in the same figure can hold a relatively large amount of solder 40 in the heat dissipation member holding portion 60 while securing the flow path of the enclosed gas 19 at the time of reflow soldering.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the first embodiment of the present technology, and thus the description thereof is omitted.

  As described above, since the imaging device 10 according to the third embodiment of the present technology includes the two or more notches 53, the comparison is performed while securing the flow path of the enclosed gas 19 at the time of reflow soldering. As many solders 40 as possible.

<4. Fourth embodiment>
The imaging element 10 according to the third embodiment described above uses the heat dissipating member holding portion 60 in which the notch 53 is a non-adhesion area. On the other hand, the imaging device 10 according to the fourth embodiment of the present technology uses the heat dissipating member holding portion 60 in which the adhesion area or the non-adhesion area is arranged in a mesh shape. It is different from

[Mounting board configuration]
FIG. 11 is a diagram illustrating an example of a configuration of a mounting board according to a fourth embodiment of the present technology. The pad 52 in the same figure differs from the mounting substrate 50 described in FIG. 10 in that the holding area 54 is partially provided. The holding area 54 shown in the same figure is configured by alternately arranging the adhesion area 55 made of metal forming the pad 52 and the non-adhesion area 56 made of insulating material forming the mounting substrate 50. It is an area. In the figure, a represents an example of the holding area 54 in which the attached area 55 is formed in a mesh shape, and b in the figure represents an example of the holding area 54 in which the non-attached area 56 is formed in a mesh shape.

  As described above, in the holding area 54 in which the adhesion area 55 and the non-adhesion area 56 are alternately arranged, the adhesion area 55 configured in a relatively narrow area contributes to the holding of the solder 40 in the molten state. Therefore, the region of the holding region 54 can be made relatively wide, and the holding amount of the solder 40 in the molten state can be improved. On the other hand, since the non-adhesion area 56 divides the adhesion area 55 finely, the solder 40 remaining in the holding area 54 when the solder 40 is absorbed by the semiconductor package 100 can be reduced. Therefore, more solder 40 in a molten state can be supplied to the inside of the semiconductor package 100. The pad 52, the holding area 54 and the pad 34 of the package substrate 20 constitute a heat dissipating member holding portion 60.

  Note that the pad 52 of a in FIG. In the notched portion 53, the arrangement of the solder 40 before reflow soldering is not performed, and functions as a gas discharge path. On the other hand, in the pad 52 b in the same figure, the non-adhesion area 56 of the holding area 54 constitutes a gas discharge path. In addition, in b in the same figure, the solder 40 before the reflow soldering can be disposed in both the area of the pad 52 and the holding area 54.

  The configuration of the mounting substrate 50 is not limited to this. For example, the entire surface of the pad 52 may be configured the same as the holding area 54.

[Method of manufacturing imaging device]
FIG. 12 is a diagram illustrating an example of a method of manufacturing an imaging device according to the fourth embodiment of the present technology. A in the same figure is a figure showing the structure of the vicinity of the through-hole 31 in the imaging device 1, and is sectional drawing in alignment with the BB 'line of a in FIG.

  B in the same figure is a figure showing the state by which the solder 40 of a fusion | melting state was hold | maintained at the thermal radiation member holding part 60 in reflow soldering. Thereafter, cooling of the imaging device 1 is started, and the molten solder 40 is sucked into the semiconductor package 100 via the through holes 31. C in the same figure represents a state after the solder 40 in a molten state is sucked up. The arrow c in the figure represents the path of the solder 40 in the molten state to be sucked up. As indicated by c in the same figure, a relatively large amount of solder 40 remains in the area where the pad 52 and the pad 34 are disposed facing each other. On the other hand, in the holding area 54, a large amount of solder 40 is absorbed into the interior of the semiconductor package 100 except for the solder 40 remaining on the surface of the adhesion area 55. As described above, in the heat radiation member holding unit 60 in the same figure, the supply amount of the held solder 40 in the molten state to the inside of the semiconductor package 100 can be improved.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the first embodiment of the present technology, and thus the description thereof is omitted.

  As described above, the imaging device 10 according to the fourth embodiment of the present technology includes the holding areas 54 in which the adhesion areas 55 and the non-adhesion areas 56 are alternately arranged, so that the inside of the semiconductor package 100 is obtained. The supply amount of the solder 40 can be improved.

<5. Fifth embodiment>
The imaging device 10 according to the fourth embodiment described above uses the heat radiation member holding unit 60 having the holding area 54. On the other hand, the imaging device 1 according to the fourth embodiment of the present technology is different from the fourth embodiment described above in that a groove is formed in the holding area 54 of the mounting substrate 50.

[Mounting board configuration]
FIG. 13 is a diagram illustrating an example of a method of manufacturing an imaging device according to the fifth embodiment of the present technology. A in the same figure is a figure showing the structure of the vicinity of the through-hole 31 in the imaging device 1. FIG. The holding area 54 in the figure is different from the holding area 54 described in FIG. 12 in that a mesh-like groove 57 is formed, and the metal constituting the pad 52 is disposed at the bottom of the groove 57. That is, the adhesion area 55 of the holding area 54 in the same figure is disposed at the bottom of the groove 57. The dotted line in the figure represents the position of the bottom of the groove 57 formed in a mesh shape.

  B in the same figure is a figure showing the state by which the solder 40 of a fusion | melting state was hold | maintained at the thermal radiation member holding part 60 in reflow soldering. The dotted arrow b in the figure represents the path of the discharge of the expanded filling gas 19. The solder 40 in the molten state in the holding area 54 is dispersedly held in the grooves 57 of the attachment area 55 and thus held adjacent to the mounting substrate 50. Therefore, a gas discharge path is formed adjacent to the package substrate 20 at a position facing the holding area 54. For this reason, the notch part 53 demonstrated in a of FIG. 11 can be abbreviate | omitted. C in the same figure represents a state after the solder 40 in a molten state is sucked up. Similar to c in FIG. 12, a large amount of solder 40 is absorbed into the interior of the semiconductor package 100 except for the solder 40 remaining on the surface of the adhesion region 55. As described above, in the holding area 54 in the figure, by forming the groove 57 in the mounting substrate 50, the holding amount of the solder 40 in the molten state can be improved.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the fourth embodiment of the present technology, and thus the description will be omitted.

  As described above, the imaging device 10 according to the fifth embodiment of the present technology supplies solder 40 to the inside of the semiconductor package 100 by arranging the adhesion region 55 in the groove 57 formed in the mounting substrate 50. The amount can be further improved.

<6. Sixth embodiment>
The imaging device 10 according to the first embodiment described above uses the notch 53 as the gas discharge path. On the other hand, the imaging device 10 according to the sixth embodiment of the present technology is different from the first embodiment described above in that the holes formed in the mounting substrate 50 are used as the gas discharge path.

[Mounting board configuration]
FIG. 14 is a diagram illustrating a configuration example of a mounting board according to a sixth embodiment of the present technology. A in the same figure is a top view showing the example of composition of mounting board 50. FIG. The mounting substrate 50 in the same figure is different from the mounting substrate 50 described in FIG. 4 in that a hole 58 is provided at the center of the pad 52 and the notch 53 in the pad 52 is omitted. B in the same figure is a sectional view showing an example of composition near the penetration hole 31 in imaging device 1, and is a figure showing arrangement of solder 40 before reflow soldering. As shown in b in the figure, the solder 40 before reflow soldering can be disposed in the area sandwiched between the pad 52 and the pad 34. As described above, the image pickup device 10 in the same figure can improve the holding amount of the solder 40 of the heat radiation member holding portion 60 while securing the gas discharge path at the time of the reflow soldering.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the first embodiment of the present technology, and thus the description thereof is omitted.

  As described above, the imaging device 10 according to the sixth embodiment of the present technology uses the holes 58 formed in the mounting substrate 50 as a gas discharge path, thereby making the solder 40 inside the semiconductor package 100 Supply quantity can be improved.

<7. Seventh embodiment>
In the imaging element 10 according to the above-described first embodiment, the notch 53 and the like are formed in the pad 52 of the mounting substrate 50. On the other hand, the imaging device 10 according to the seventh embodiment of the present technology differs from the first embodiment described above in that the notches 53 and the like are formed in the pad 34 of the package substrate 20.

[Package board configuration]
FIG. 15 is a view showing a configuration example of a package substrate according to a seventh embodiment of the present technology. “A” in the same figure represents an example of the pad 34 having two notches 35. The solder 40 in the molten state is held in the area of the notch 35. B in the same figure is a figure showing the example of the pad 34 provided with the one notch 35 and the holding area | region 36. As shown in FIG. The holding area 36 is an area formed by alternately arranging an adhesion area 37 made of metal forming the pad 34 and a non-adhesion area 38 made of an insulating material forming the package substrate 20. In the pad 34 b in FIG. 5, the notch 35 functions as a gas discharge path, and the holding area 36 holds the solder 40 in a molten state.

  The configuration of the imaging device 1 other than this is the same as the configuration of the imaging device 1 described in the first embodiment of the present technology, and thus the description thereof is omitted.

  The configuration of the pad 34 is not limited to this example. For example, one notch 35 may be disposed, or three or more notches 35 may be disposed. In addition, for example, the holding region 36 may be configured to have the same shape as the holding region 54 b in FIG. 11. Also, for example, the entire surface of the pad 34 can be configured the same as the holding area 36.

  As described above, the imaging device 10 according to the seventh embodiment of the present technology can hold the solder 40 in a molten state by the notches 35 and the like formed on the pads 34 of the package substrate 20.

<8. Example of application to solid-state imaging device>
FIG. 16 is a cross-sectional view showing a configuration example of a solid-state imaging device. The figure is a figure showing the structure of the solid-state imaging device which may be applied to the image pick-up element chip 12 demonstrated in FIG.

  In the solid-state imaging device, a PD (photodiode) 20019 receives incident light 20001 incident from the back surface (upper surface in the drawing) side of the semiconductor substrate 20018. A planarization film 20013, a CF (color filter) 20012, and a microlens 20011 are provided above the PD 20019, and the light receiving surface 20017 receives incident light 20001 sequentially incident through the respective parts to perform photoelectric conversion. It will be.

  For example, in the PD 20019, the n-type semiconductor region 20000 is formed as a charge storage region for storing charges (electrons). In the PD 20019, the n-type semiconductor region 20020 is provided inside the p-type semiconductor regions 20016 and 20041 of the semiconductor substrate 20018. On the surface (lower surface) side of the semiconductor substrate 20018 of the n-type semiconductor region 20020, a p-type semiconductor region 20041 having a higher impurity concentration than the back surface (upper surface) side is provided. That is, the PD 20019 has a hole-accumulation diode (HAD) structure, and a p-type semiconductor is formed to suppress generation of dark current at each interface between the upper surface side and the lower surface side of the n-type semiconductor region 20020. Regions 20016 and 20041 are formed.

  In the semiconductor substrate 20018, a pixel separation portion 20030 that electrically separates the plurality of pixels 20010 is provided, and in the region divided by the pixel separation portion 20030, a PD 20019 is provided. In the figure, when the solid-state imaging device is viewed from the upper surface side, the pixel separation unit 20030 is formed in a lattice shape so as to be interposed between a plurality of pixels 20010, for example. It is formed in the area divided by.

  In each PD 20019, the anode is grounded, and in the solid-state imaging device, the signal charge (for example, electrons) stored in the PD 20019 is read out through a transfer transistor (MOS FET) or the like (not shown) and is used as an electrical signal It is output to VSL (vertical signal line) not shown.

  The wiring layer 20050 is provided on the surface (lower surface) of the semiconductor substrate 20018 opposite to the back surface (upper surface) provided with the light shielding film 20014, the CF 20012, the microlens 20011, and the like.

  The wiring layer 20050 includes a wiring 20051 and an insulating layer 20052, and in the insulating layer 20052, the wiring 20051 is formed to be electrically connected to each element. The wiring layer 20050 is a layer of a so-called multilayer wiring, and is formed by alternately laminating an interlayer insulating film forming the insulating layer 20052 and the wiring 20051 a plurality of times. Here, as the wiring 20051, a wiring for reading a charge from the PD 20019 such as a transfer transistor or a wiring for VSL or the like is stacked via the insulating layer 20052.

  A supporting substrate 20061 is provided on the surface of the wiring layer 20050 opposite to the side on which the PD 20019 is provided. For example, a substrate made of a silicon semiconductor with a thickness of several hundred μm is provided as the supporting substrate 20061.

  The light shielding film 20014 is provided on the side of the back surface (upper surface in the drawing) of the semiconductor substrate 20018.

  The light shielding film 20014 is configured to shield a part of the incident light 20001 directed from the upper side of the semiconductor substrate 20018 to the back surface of the semiconductor substrate 20018.

  The light shielding film 20014 is provided above the pixel separating portion 20030 provided inside the semiconductor substrate 20018. Here, the light shielding film 20014 is provided so as to protrude in a convex shape on the back surface (upper surface) of the semiconductor substrate 20018 via the insulating film 20015 such as a silicon oxide film. On the other hand, the light shielding film 20014 is not provided but opened so that the incident light 20001 is incident on the PD 20019 above the PD 20019 provided inside the semiconductor substrate 20018.

  That is, when the solid-state imaging device is viewed from the upper surface side in the figure, the planar shape of the light shielding film 20014 is lattice-like, and an opening through which incident light 20001 passes to the light receiving surface 20017 is formed.

  The light shielding film 20014 is formed of a light shielding material that shields light. For example, the light shielding film 20014 is formed by sequentially stacking a titanium (Ti) film and a tungsten (W) film. Besides, the light shielding film 20014 can be formed, for example, by sequentially laminating a titanium nitride (TiN) film and a tungsten (W) film.

  The light shielding film 20014 is covered with a planarization film 20013. The planarization film 20013 is formed using an insulating material which transmits light.

  The pixel separating unit 20030 includes a groove 20031, a fixed charge film 20032, and an insulating film 20033.

  The fixed charge film 20032 is formed on the side of the back surface (upper surface) of the semiconductor substrate 20018 so as to cover the groove portion 20031 partitioning the plurality of pixels 20010.

  Specifically, fixed charge film 20032 is provided to cover the inner surface of groove portion 20031 formed on the back surface (upper surface) side in semiconductor substrate 20018 with a constant thickness. In addition, an insulating film 20033 is provided (filled) so as to fill the inside of the groove portion 20031 covered with the fixed charge film 20032.

  Here, the fixed charge film 20032 uses a high dielectric material having a negative fixed charge so that a positive charge (hole) storage region is formed at the interface with the semiconductor substrate 20018 and generation of dark current is suppressed. It is formed. Since the fixed charge film 20032 is formed to have negative fixed charge, an electric field is applied to the interface with the semiconductor substrate 20018 by the negative fixed charge, and a positive charge (hole) storage region is formed.

  The fixed charge film 20032 can be formed of, for example, a hafnium oxide film (HfO 2 film). In addition, the fixed charge film 20032 can be formed to include at least one of other oxides such as hafnium, zirconium, aluminum, tantalum, titanium, magnesium, yttrium, and lanthanoid elements.

<9. Example of application to camera>
The present technology can be applied to various products. For example, the present technology may be realized as an imaging device used for a camera or the like.

  FIG. 17 is a block diagram showing a schematic configuration example of a camera to which the present technology can be applied. The camera 1000 in this figure includes a lens 1001, an imaging element 1002, an imaging control unit 1003, a lens driving unit 1004, an image processing unit 1005, an operation input unit 1006, a frame memory 1007, and a display unit 1008. And a recording unit 1009.

  A lens 1001 is a photographing lens of the camera 1000. The lens 1001 condenses light from a subject and causes the light to be incident on an image sensor 1002 described later to form an image of the subject.

  The imaging element 1002 is a semiconductor element that captures light from an object collected by the lens 1001. The imaging element 1002 generates an analog image signal according to the irradiated light, converts it into a digital image signal, and outputs it.

  The imaging control unit 1003 controls imaging in the imaging element 1002. The imaging control unit 1003 controls the imaging element 1002 by generating a control signal and outputting the control signal to the imaging element 1002. Also, the imaging control unit 1003 can perform autofocus in the camera 1000 based on the image signal output from the imaging element 1002. Here, the autofocus is a system that detects the focal position of the lens 1001 and automatically adjusts it. As this autofocusing, a method (image plane phase difference autofocusing) of detecting the image plane phase difference by the phase difference pixels arranged in the imaging element 1002 and detecting the focal position can be used. In addition, a method (contrast autofocus) of detecting a position at which the contrast of the image is the highest as the focus position can also be applied. The imaging control unit 1003 adjusts the position of the lens 1001 via the lens driving unit 1004 based on the detected focus position, and performs autofocus. The imaging control unit 1003 can be configured, for example, by a DSP (Digital Signal Processor) on which firmware is installed.

  The lens driving unit 1004 drives the lens 1001 based on the control of the imaging control unit 1003. The lens drive unit 1004 can drive the lens 1001 by changing the position of the lens 1001 using a built-in motor.

  An image processing unit 1005 processes an image signal generated by the image sensor 1002. This processing includes, for example, demosaicing that generates an image signal of insufficient color among image signals corresponding to red, green and blue for each pixel, noise reduction that removes noise of the image signal, encoding of the image signal, etc. Applicable The image processing unit 1005 can be configured, for example, by a microcomputer equipped with firmware.

  The operation input unit 1006 receives an operation input from the user of the camera 1000. For example, a push button or a touch panel can be used as the operation input unit 1006. The operation input received by the operation input unit 1006 is transmitted to the imaging control unit 1003 and the image processing unit 1005. Thereafter, a process according to the operation input, for example, a process of imaging a subject is activated.

  The frame memory 1007 is a memory for storing a frame which is an image signal for one screen. The frame memory 1007 is controlled by the image processing unit 1005 and holds a frame in the process of image processing.

  The display unit 1008 displays an image processed by the image processing unit 1005. For example, a liquid crystal panel can be used for the display portion 1008.

  The recording unit 1009 records an image processed by the image processing unit 1005. For example, a memory card or a hard disk can be used for the recording unit 1009.

  Hereinabove, the camera to which the present invention can be applied has been described. The present technology may be applied to the imaging element 1002 among the configurations described above. Specifically, the imaging device 1 described in FIG. 1 can be applied to the imaging element 1002. By applying the imaging device 1 to the imaging element 1002, the temperature rise of the imaging element chip of the imaging element 1002 in the camera 1000 can be reduced, and the reliability of the camera 1000 can be improved.

  In addition, although the camera was demonstrated as an example here, the technique which concerns on this invention may be applied to the monitoring apparatus etc. besides, for example.

<10. Application example to endoscopic surgery system>
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure may be applied to an endoscopic surgery system.

  FIG. 18 is a diagram showing an example of a schematic configuration of an endoscopic surgery system to which the technology (the present technology) according to the present disclosure can be applied.

  10, a state where a surgeon (doctor) 11131 is performing surgery on a patient 11132 on a patient bed 11133 using the endoscopic surgery system 11000 is illustrated. As shown, the endoscopic surgery system 11000 includes an endoscope 11100, other surgical instruments 11110 such as an insufflation tube 11111 and an energy treatment instrument 11112, and a support arm device 11120 for supporting the endoscope 11100. , A cart 11200 on which various devices for endoscopic surgery are mounted.

  The endoscope 11100 includes a lens barrel 11101 whose region of a predetermined length from the tip is inserted into a body cavity of a patient 11132, and a camera head 11102 connected to a proximal end of the lens barrel 11101. In the illustrated example, the endoscope 11100 configured as a so-called rigid endoscope having a rigid barrel 11101 is illustrated, but even if the endoscope 11100 is configured as a so-called flexible mirror having a flexible barrel Good.

  At the tip of the lens barrel 11101, an opening into which an objective lens is fitted is provided. A light source device 11203 is connected to the endoscope 11100, and light generated by the light source device 11203 is guided to the tip of the lens barrel by a light guide extended inside the lens barrel 11101, and an objective The light is emitted toward the observation target in the body cavity of the patient 11132 through the lens. In addition, the endoscope 11100 may be a straight endoscope, or may be a oblique endoscope or a side endoscope.

  An optical system and an imaging device are provided inside the camera head 11102, and the reflected light (observation light) from the observation target is condensed on the imaging device by the optical system. The observation light is photoelectrically converted by the imaging element to generate an electric signal corresponding to the observation light, that is, an image signal corresponding to the observation image. The image signal is transmitted as RAW data to a camera control unit (CCU: Camera Control Unit) 11201.

  The CCU 11201 is configured by a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), and the like, and centrally controls the operations of the endoscope 11100 and the display device 11202. Furthermore, the CCU 11201 receives an image signal from the camera head 11102 and performs various image processing for displaying an image based on the image signal, such as development processing (demosaicing processing), on the image signal.

  The display device 11202 displays an image based on an image signal subjected to image processing by the CCU 11201 under control of the CCU 11201.

  The light source device 11203 includes, for example, a light source such as a light emitting diode (LED), and supplies the endoscope 11100 with irradiation light at the time of imaging a surgical site or the like.

  The input device 11204 is an input interface to the endoscopic surgery system 11000. The user can input various information and input instructions to the endoscopic surgery system 11000 via the input device 11204. For example, the user inputs an instruction to change the imaging condition (type of irradiated light, magnification, focal length, and the like) by the endoscope 11100, and the like.

  The treatment tool control device 11205 controls the drive of the energy treatment tool 11112 for ablation of tissue, incision, sealing of a blood vessel, and the like. The insufflation apparatus 11206 is a gas within the body cavity via the insufflation tube 11111 in order to expand the body cavity of the patient 11132 for the purpose of securing a visual field by the endoscope 11100 and securing a working space of the operator. Send The recorder 11207 is a device capable of recording various types of information regarding surgery. The printer 11208 is an apparatus capable of printing various types of information regarding surgery in various types such as text, images, and graphs.

  The light source device 11203 that supplies the irradiation light when imaging the surgical site to the endoscope 11100 can be configured of, for example, an LED, a laser light source, or a white light source configured by a combination of these. When a white light source is configured by a combination of RGB laser light sources, the output intensity and output timing of each color (each wavelength) can be controlled with high precision. It can be carried out. Further, in this case, the laser light from each of the RGB laser light sources is irradiated to the observation target in time division, and the drive of the image pickup element of the camera head 11102 is controlled in synchronization with the irradiation timing to cope with each of RGB. It is also possible to capture a shot image in time division. According to the method, a color image can be obtained without providing a color filter in the imaging device.

  In addition, the drive of the light source device 11203 may be controlled so as to change the intensity of the light to be output every predetermined time. The drive of the imaging device of the camera head 11102 is controlled in synchronization with the timing of the change of the light intensity to acquire images in time division, and by combining the images, high dynamic without so-called blackout and whiteout is obtained. An image of the range can be generated.

  The light source device 11203 may be configured to be able to supply light of a predetermined wavelength band corresponding to special light observation. In special light observation, for example, the mucous membrane surface layer is irradiated by irradiating narrow band light as compared with irradiation light (that is, white light) at the time of normal observation using the wavelength dependency of light absorption in body tissue. The so-called narrow band imaging (Narrow Band Imaging) is performed to image a predetermined tissue such as a blood vessel with high contrast. Alternatively, in special light observation, fluorescence observation may be performed in which an image is obtained by fluorescence generated by irradiation with excitation light. In fluorescence observation, body tissue is irradiated with excitation light and fluorescence from the body tissue is observed (autofluorescence observation), or a reagent such as indocyanine green (ICG) is locally injected into body tissue and the body tissue is Excitation light corresponding to the fluorescence wavelength of the reagent can be irradiated to obtain a fluorescence image or the like. The light source device 11203 can be configured to be able to supply narrow band light and / or excitation light corresponding to such special light observation.

  FIG. 19 is a block diagram showing an example of functional configurations of the camera head 11102 and the CCU 11201 shown in FIG.

  The camera head 11102 includes a lens unit 11401, an imaging unit 11402, a drive unit 11403, a communication unit 11404, and a camera head control unit 11405. The CCU 11201 includes a communication unit 11411, an image processing unit 11412, and a control unit 11413. The camera head 11102 and the CCU 11201 are communicably connected to each other by a transmission cable 11400.

  The lens unit 11401 is an optical system provided at a connection portion with the lens barrel 11101. The observation light taken in from the tip of the lens barrel 11101 is guided to the camera head 11102 and is incident on the lens unit 11401. The lens unit 11401 is configured by combining a plurality of lenses including a zoom lens and a focus lens.

  The imaging unit 11402 includes an imaging element. The imaging device constituting the imaging unit 11402 may be one (a so-called single-plate type) or a plurality (a so-called multi-plate type). When the imaging unit 11402 is configured as a multi-plate type, for example, an image signal corresponding to each of RGB may be generated by each imaging element, and a color image may be obtained by combining them. Alternatively, the imaging unit 11402 may be configured to have a pair of imaging elements for acquiring image signals for right eye and left eye corresponding to 3D (dimensional) display. By performing 3D display, the operator 11131 can more accurately grasp the depth of the living tissue in the operation site. When the imaging unit 11402 is configured as a multi-plate type, a plurality of lens units 11401 may be provided corresponding to each imaging element.

  In addition, the imaging unit 11402 may not necessarily be provided in the camera head 11102. For example, the imaging unit 11402 may be provided inside the lens barrel 11101 immediately after the objective lens.

  The driving unit 11403 is configured by an actuator, and moves the zoom lens and the focusing lens of the lens unit 11401 by a predetermined distance along the optical axis under the control of the camera head control unit 11405. Thereby, the magnification and the focus of the captured image by the imaging unit 11402 can be appropriately adjusted.

  The communication unit 11404 is configured of a communication device for transmitting and receiving various types of information to and from the CCU 11201. The communication unit 11404 transmits the image signal obtained from the imaging unit 11402 to the CCU 11201 as RAW data via the transmission cable 11400.

  The communication unit 11404 also receives a control signal for controlling the drive of the camera head 11102 from the CCU 11201 and supplies the control signal to the camera head control unit 11405. The control signal includes, for example, information indicating that the frame rate of the captured image is designated, information indicating that the exposure value at the time of imaging is designated, and / or information indicating that the magnification and focus of the captured image are designated, etc. Contains information about the condition.

  Note that the imaging conditions such as the frame rate, exposure value, magnification, and focus described above may be appropriately designated by the user, or may be automatically set by the control unit 11413 of the CCU 11201 based on the acquired image signal. Good. In the latter case, the so-called AE (Auto Exposure) function, AF (Auto Focus) function, and AWB (Auto White Balance) function are incorporated in the endoscope 11100.

  The camera head control unit 11405 controls the drive of the camera head 11102 based on the control signal from the CCU 11201 received via the communication unit 11404.

  The communication unit 11411 is configured by a communication device for transmitting and receiving various types of information to and from the camera head 11102. The communication unit 11411 receives an image signal transmitted from the camera head 11102 via the transmission cable 11400.

  Further, the communication unit 11411 transmits a control signal for controlling driving of the camera head 11102 to the camera head 11102. The image signal and the control signal can be transmitted by telecommunication or optical communication.

  An image processing unit 11412 performs various types of image processing on an image signal that is RAW data transmitted from the camera head 11102.

  The control unit 11413 performs various types of control regarding imaging of a surgical site and the like by the endoscope 11100 and display of a captured image obtained by imaging of the surgical site and the like. For example, the control unit 11413 generates a control signal for controlling the drive of the camera head 11102.

  Further, the control unit 11413 causes the display device 11202 to display a captured image in which a surgical site or the like is captured, based on the image signal subjected to the image processing by the image processing unit 11412. At this time, the control unit 11413 may recognize various objects in the captured image using various image recognition techniques. For example, the control unit 11413 detects a shape, a color, and the like of an edge of an object included in a captured image, thereby enabling a surgical tool such as forceps, a specific biological site, bleeding, mist when using the energy treatment tool 11112, and the like. It can be recognized. When displaying the captured image on the display device 11202, the control unit 11413 may superimpose various surgical support information on the image of the surgery section using the recognition result. The operation support information is superimposed and presented to the operator 11131, whereby the burden on the operator 11131 can be reduced and the operator 11131 can reliably proceed with the operation.

  A transmission cable 11400 connecting the camera head 11102 and the CCU 11201 is an electric signal cable corresponding to communication of an electric signal, an optical fiber corresponding to optical communication, or a composite cable of these.

  Here, in the illustrated example, communication is performed by wire communication using the transmission cable 11400, but communication between the camera head 11102 and the CCU 11201 may be performed wirelessly.

  Heretofore, an example of the endoscopic surgery system to which the technology according to the present disclosure can be applied has been described. The technology according to the present disclosure may be applied to the imaging unit 11402 of the camera head 11102 among the configurations described above. Specifically, the imaging device 10 of FIG. 1 can be applied to the imaging unit 10402. By applying the technology according to the present disclosure to the imaging unit 10402, the thermal conductivity of the semiconductor package can be improved, so that the reliability of the endoscopic surgery system can be improved.

  In addition, although the endoscopic surgery system was demonstrated as an example here, the technique which concerns on this indication may be applied to others, for example, a microscopic surgery system etc.

<11. Applications to mobiles>
The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure is realized as a device mounted on any type of mobile object such as a car, an electric car, a hybrid electric car, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, a robot May be

  FIG. 20 is a block diagram showing a schematic configuration example of a vehicle control system that is an example of a mobile control system to which the technology according to the present disclosure can be applied.

  Vehicle control system 12000 includes a plurality of electronic control units connected via communication network 12001. In the example shown in FIG. 20, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an in-vehicle information detection unit 12040, and an integrated control unit 12050. Further, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, an audio image output unit 12052, and an in-vehicle network I / F (interface) 12053 are illustrated.

  The driveline control unit 12010 controls the operation of devices related to the driveline of the vehicle according to various programs. For example, the drive system control unit 12010 includes a drive force generation device for generating a drive force of a vehicle such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, and a steering angle of the vehicle. It functions as a control mechanism such as a steering mechanism that adjusts and a braking device that generates a braking force of the vehicle.

  Body system control unit 12020 controls the operation of various devices equipped on the vehicle body according to various programs. For example, the body system control unit 12020 functions as a keyless entry system, a smart key system, a power window device, or a control device of various lamps such as a headlamp, a back lamp, a brake lamp, a blinker or a fog lamp. In this case, the body system control unit 12020 may receive radio waves or signals of various switches transmitted from a portable device substituting a key. Body system control unit 12020 receives the input of these radio waves or signals, and controls a door lock device, a power window device, a lamp and the like of the vehicle.

  Outside vehicle information detection unit 12030 detects information outside the vehicle equipped with vehicle control system 12000. For example, an imaging unit 12031 is connected to the external information detection unit 12030. The out-of-vehicle information detection unit 12030 causes the imaging unit 12031 to capture an image outside the vehicle, and receives the captured image. The external information detection unit 12030 may perform object detection processing or distance detection processing of a person, a vehicle, an obstacle, a sign, characters on a road surface, or the like based on the received image.

  The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal according to the amount of light received. The imaging unit 12031 can output an electric signal as an image or can output it as distance measurement information. The light received by the imaging unit 12031 may be visible light or non-visible light such as infrared light.

  In-vehicle information detection unit 12040 detects in-vehicle information. For example, a driver state detection unit 12041 that detects a state of a driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera for imaging the driver, and the in-vehicle information detection unit 12040 determines the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041. It may be calculated or it may be determined whether the driver does not go to sleep.

  The microcomputer 12051 calculates a control target value of the driving force generation device, the steering mechanism or the braking device based on the information inside and outside the vehicle acquired by the outside information detecting unit 12030 or the in-vehicle information detecting unit 12040, and a drive system control unit A control command can be output to 12010. For example, the microcomputer 12051 realizes functions of an advanced driver assistance system (ADAS) including collision avoidance or shock mitigation of a vehicle, follow-up traveling based on an inter-vehicle distance, vehicle speed maintenance traveling, vehicle collision warning, vehicle lane departure warning, etc. It is possible to perform coordinated control aiming at

  Further, the microcomputer 12051 controls the driving force generating device, the steering mechanism, the braking device, and the like based on the information around the vehicle acquired by the outside information detecting unit 12030 or the in-vehicle information detecting unit 12040 so that the driver can Coordinated control can be performed for the purpose of automatic driving that travels autonomously without depending on the operation.

  Further, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the external information detection unit 12030. For example, the microcomputer 12051 controls the headlamp according to the position of the preceding vehicle or oncoming vehicle detected by the external information detection unit 12030, and performs cooperative control for the purpose of antiglare such as switching the high beam to the low beam. It can be carried out.

  The audio image output unit 12052 transmits an output signal of at least one of audio and image to an output device capable of visually or aurally notifying information to a passenger or the outside of a vehicle. In the example of FIG. 20, an audio speaker 12061, a display unit 12062, and an instrument panel 12063 are illustrated as the output device. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

  FIG. 21 is a diagram illustrating an example of the installation position of the imaging unit 12031.

  In FIG. 21, the vehicle 12100 includes imaging units 12101, 12102, 12103, 12104, and 12105 as the imaging unit 12031.

  The imaging units 12101, 12102, 12103, 12104, and 12105 are provided, for example, on the front nose of the vehicle 12100, a side mirror, a rear bumper, a back door, an upper portion of a windshield of a vehicle interior, and the like. The imaging unit 12101 provided in the front nose and the imaging unit 12105 provided in the upper part of the windshield in the vehicle cabin mainly acquire an image in front of the vehicle 12100. The imaging units 12102 and 12103 included in the side mirror mainly acquire an image of the side of the vehicle 12100. The imaging unit 12104 provided in the rear bumper or the back door mainly acquires an image of the rear of the vehicle 12100. Images in the front acquired by the imaging units 12101 and 12105 are mainly used to detect a preceding vehicle or a pedestrian, an obstacle, a traffic light, a traffic sign, a lane, or the like.

  Note that FIG. 21 illustrates an example of the imaging range of the imaging units 12101 to 12104. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided on the front nose, the imaging ranges 12112 and 12113 indicate the imaging ranges of the imaging units 12102 and 12103 provided on the side mirrors, and the imaging range 12114 indicates The imaging range of the imaging part 12104 provided in the rear bumper or the back door is shown. For example, by overlaying the image data captured by the imaging units 12101 to 12104, a bird's eye view of the vehicle 12100 viewed from above can be obtained.

  At least one of the imaging units 12101 to 12104 may have a function of acquiring distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera including a plurality of imaging devices, or an imaging device having pixels for phase difference detection.

  For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 measures the distance to each three-dimensional object in the imaging ranges 12111 to 12114, and the temporal change of this distance (relative velocity with respect to the vehicle 12100). In particular, it is possible to extract a three-dimensional object traveling at a predetermined speed (for example, 0 km / h or more) in substantially the same direction as the vehicle 12100 as a leading vehicle, in particular by finding the it can. Further, the microcomputer 12051 can set an inter-vehicle distance to be secured in advance before the preceding vehicle, and can perform automatic brake control (including follow-up stop control), automatic acceleration control (including follow-up start control), and the like. As described above, it is possible to perform coordinated control for the purpose of automatic driving or the like that travels autonomously without depending on the driver's operation.

  For example, based on the distance information obtained from the imaging units 12101 to 12104, the microcomputer 12051 converts three-dimensional object data relating to three-dimensional objects into two-dimensional vehicles such as two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, telephone poles, and other three-dimensional objects. It can be classified, extracted and used for automatic avoidance of obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 into obstacles visible to the driver of the vehicle 12100 and obstacles difficult to see. Then, the microcomputer 12051 determines the collision risk indicating the degree of risk of collision with each obstacle, and when the collision risk is a setting value or more and there is a possibility of a collision, through the audio speaker 12061 or the display unit 12062 By outputting an alarm to the driver or performing forcible deceleration or avoidance steering via the drive system control unit 12010, driving support for collision avoidance can be performed.

  At least one of the imaging units 12101 to 12104 may be an infrared camera that detects infrared light. For example, the microcomputer 12051 can recognize a pedestrian by determining whether a pedestrian is present in the images captured by the imaging units 12101 to 12104. Such pedestrian recognition is, for example, a procedure for extracting feature points in images captured by the imaging units 12101 to 12104 as an infrared camera, and pattern matching processing on a series of feature points indicating the outline of an object to determine whether it is a pedestrian or not The procedure is to determine When the microcomputer 12051 determines that a pedestrian is present in the captured image of the imaging units 12101 to 12104 and recognizes the pedestrian, the audio image output unit 12052 generates a square outline for highlighting the recognized pedestrian. The display unit 12062 is controlled so as to display a superimposed image. Further, the audio image output unit 12052 may control the display unit 12062 to display an icon or the like indicating a pedestrian at a desired position.

  The example of the vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the present disclosure may be applied to the imaging unit 12031 and the like among the configurations described above. Specifically, the imaging device 10 of FIG. 1 can be applied to the imaging units 12031 and 12101 to 12105. By applying the technology according to the present disclosure to the imaging unit 12031 and the like, the thermal conductivity of the semiconductor package can be improved, so that the reliability of the vehicle control system can be improved.

  Finally, the description of each embodiment described above is an example of the present technology, and the present technology is not limited to the above-described embodiment. For this reason, even if it is a range which does not deviate from the technical idea concerning this art even if it is except each embodiment mentioned above, it is needless to say that various change is possible according to a design etc.

The present technology can also be configured as follows.
(1) Semiconductor chip,
The semiconductor chip is mounted on the front surface with a predetermined gap and is mounted on the mounting substrate on the back surface which is a surface different from the front surface, and penetrates the surface and the back surface in the region on which the semiconductor chip is mounted. A package substrate having a hole;
And sealing the semiconductor chip together with the package substrate to form a semiconductor package.
The semiconductor element mounted in the predetermined gap, wherein the heat dissipating member in a molten state is sucked through the through hole after the enclosed gas of the semiconductor package is discharged through the through hole when the substrate is mounted.
(2) The semiconductor element according to (1), wherein the heat dissipation member is a member having a melting point lower than a heating temperature at the time of mounting the substrate.
(3) The semiconductor element according to (2), wherein the heat dissipation member is made of solder.
(4) The semiconductor device according to any one of (1) to (3), wherein the package substrate further includes a heat dissipating member holding portion that holds a heat dissipating member in a molten state sucked up through the through hole.
(5) The semiconductor device according to (4), wherein the package substrate includes the heat dissipation member holding portion configured of a pad.
(6) The package substrate according to (4), wherein the package substrate includes the heat radiation member holding portion configured of an adhesion region adhering to the heat radiation member in the molten state and a non-adhesion region not adhering to the heat radiation member in the molten state. Semiconductor device.
(7) The semiconductor device according to any one of (1) to (6), wherein the package substrate further includes a gas discharge path when the enclosed gas of the semiconductor package is discharged through the through hole.
(8) The semiconductor chip and the semiconductor chip mounted on the surface with a predetermined gap therebetween and mounted on the back surface which is a surface different from the surface, and the surface and the back surface in the region on which the semiconductor chip is mounted A package substrate having a through hole that penetrates the package substrate, and a sealing portion that hermetically seals the semiconductor chip together with the package substrate to form a semiconductor package, and the gas enclosed in the semiconductor package is After being discharged through the through hole, the heat dissipating member in a molten state is sucked through the through hole, and the semiconductor element disposed in the predetermined gap is mounted on the substrate and is sucked through the through hole. A mounting substrate for supplying the heat radiation member in the molten state.
(9) The mounting substrate according to (8), further including a heat dissipating member holding portion for holding the heat dissipating member in the molten state for the supply.
(10) The mounting substrate according to (9), wherein the heat dissipation member holding portion is constituted by a pad.
(11) The mounting substrate according to (9), wherein the heat dissipating member holding portion is configured of an attached area attached to the heat dissipating member in the molten state and a non-adhered area not attached to the heat dissipating member in the molten state.
(12) The mounting substrate according to any one of (8) to (11), wherein the mounting substrate includes a gas discharge path when the enclosed gas of the semiconductor package is discharged through the through hole.
(13) A semiconductor chip,
The semiconductor chip is mounted on the front surface with a predetermined gap and mounted on the back surface which is a surface different from the front surface, and has through holes penetrating the front and back surfaces in a region where the semiconductor chip is mounted. Package substrate,
A sealing portion for hermetically sealing the semiconductor chip together with the package substrate to form a semiconductor package;
In the molten state, the enclosed gas of the semiconductor package is discharged through the through hole at the time of the substrate mounting, and then the heat dissipating member is sucked up through the through hole and disposed in the predetermined gap;
A semiconductor device comprising: the package substrate; and a mounting substrate which is mounted on the substrate and supplies the heat dissipating member in the molten state which is sucked up through the through hole.
(14) A semiconductor chip and the semiconductor chip mounted on the surface with a predetermined gap therebetween and mounted on a mounting substrate on the back surface which is a surface different from the surface, and the semiconductor chip is mounted on the area on which the semiconductor chip is mounted A semiconductor element including a package substrate having through holes penetrating the front and back surfaces, and a sealing portion for hermetically sealing the semiconductor chip together with the package substrate to constitute a semiconductor package is disposed on the mounting substrate and heated An enclosed gas discharging step of discharging an enclosed gas of the semiconductor package through the through hole;
A semiconductor device comprising: a heat dissipating member wicking step of sucking the heat dissipating member in a molten state through the through hole and disposing the heat dissipating member in the predetermined gap by cooling the semiconductor element after the enclosed gas is discharged. Manufacturing method.

Reference Signs List 1 imaging device 10, 1002 imaging device 11 seal glass 12 imaging device chip 19 enclosed gas 20 package substrate 22, 24, 32, 34, 51, 52 pad 23 protective film 25 opening 26 gap 27 frame 31 through hole 33 metal film 35 , 53 Notched part 36, 54 Holding area 37, 55 Adhesion area 38, 56 Non adhesion area 40, 59 Solder 50 Mounting substrate 57 Groove 58 Hole 60 Heat dissipation member holding part 100 Semiconductor package 10402, 12031, 12101 to 12105 Imaging part

Claims (14)

  1. A semiconductor chip,
    The semiconductor chip is mounted on the front surface with a predetermined gap and is mounted on the mounting substrate on the back surface which is a surface different from the front surface, and penetrates the surface and the back surface in the region on which the semiconductor chip is mounted. A package substrate having a hole;
    And sealing the semiconductor chip together with the package substrate to form a semiconductor package.
    The semiconductor element mounted in the predetermined gap, wherein the heat dissipating member in a molten state is sucked through the through hole after the enclosed gas of the semiconductor package is discharged through the through hole when the substrate is mounted.
  2.   The semiconductor device according to claim 1, wherein the heat dissipation member is formed of a member having a melting point lower than a heating temperature at the time of mounting the substrate.
  3.   The semiconductor device according to claim 2, wherein the heat dissipation member is made of solder.
  4.   The semiconductor device according to claim 1, wherein the package substrate further includes a heat dissipating member holding portion that holds a heat dissipating member in a molten state sucked up through the through hole.
  5.   The semiconductor device according to claim 4, wherein the package substrate includes the heat dissipating member holding portion configured by a pad.
  6.   The semiconductor device according to claim 4, wherein the package substrate includes the heat dissipating member holding portion configured by an attached area attached to the heat dissipating member in the molten state and a non-adhered area not attached to the heat dissipating member in the molten state.
  7.   The semiconductor device according to claim 1, wherein the package substrate further comprises a gas discharge path when the sealed gas of the semiconductor package is discharged through the through hole.
  8.   The semiconductor chip is mounted on the surface with a predetermined gap and is mounted on the back surface which is a surface different from the surface, and the surface and the back surface are penetrated in the region where the semiconductor chip is mounted. A package substrate having a through hole, and a sealing portion for hermetically sealing the semiconductor chip together with the package substrate to form a semiconductor package, wherein an enclosed gas of the semiconductor package during the substrate mounting is used for the through hole. After being discharged through the through holes, the heat dissipating member in the molten state is sucked through the through holes, and the semiconductor element disposed in the predetermined gap is mounted on the substrate, and the molten state is sucked through the through holes. The mounting substrate that supplies the heat dissipation member.
  9.   9. The mounting substrate according to claim 8, further comprising a heat dissipating member holding portion for holding the heat dissipating member in the molten state for the supply.
  10.   The mounting substrate according to claim 9, wherein the heat dissipating member holding portion is constituted by a pad.
  11.   10. The mounting substrate according to claim 9, wherein the heat radiation member holding portion is configured by an adhesion area adhering to the heat radiation member in the molten state and a non-adhesion area not adhering to the heat radiation member in the molten state.
  12.   9. The mounting substrate according to claim 8, further comprising a gas discharge path when the enclosed gas of the semiconductor package is discharged through the through hole.
  13. A semiconductor chip,
    The semiconductor chip is mounted on the front surface with a predetermined gap and mounted on the back surface which is a surface different from the front surface, and has through holes penetrating the front and back surfaces in a region where the semiconductor chip is mounted. Package substrate,
    A sealing portion for hermetically sealing the semiconductor chip together with the package substrate to form a semiconductor package;
    In the molten state, the enclosed gas of the semiconductor package is discharged through the through hole at the time of the substrate mounting, and then the heat dissipating member is sucked up through the through hole and disposed in the predetermined gap;
    A semiconductor device comprising: the package substrate; and a mounting substrate which is mounted on the substrate and supplies the heat dissipating member in the molten state which is sucked up through the through hole.
  14. The semiconductor chip and the semiconductor chip are mounted on the surface with a predetermined gap and mounted on the mounting substrate on the back surface which is a surface different from the surface, and the surface and the back surface are mounted on the region on which the semiconductor chip is mounted. By arranging a semiconductor element including a package substrate having a through hole that penetrates the package substrate and a sealing portion that hermetically seals the semiconductor chip together with the package substrate to configure the semiconductor package on the mounting substrate, and heating the semiconductor element An enclosed gas discharging step of discharging the sealed gas of the semiconductor package through the through hole;
    A semiconductor device comprising: a heat dissipating member wicking step of sucking the heat dissipating member in a molten state through the through hole and disposing the heat dissipating member in the predetermined gap by cooling the semiconductor element after the enclosed gas is discharged. Manufacturing method.
JP2018004112A 2018-01-15 2018-01-15 Semiconductor element, mounting substrate, semiconductor device and method of manufacturing the semiconductor device Granted JP2019125643A (en)

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