JP2019091763A - クリーニング方法及び成膜方法 - Google Patents
クリーニング方法及び成膜方法 Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 114
- 238000000034 method Methods 0.000 title claims abstract description 75
- 238000012545 processing Methods 0.000 claims abstract description 120
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910052731 fluorine Inorganic materials 0.000 claims abstract description 25
- 239000011737 fluorine Substances 0.000 claims abstract description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 16
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 15
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 15
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 11
- 150000002367 halogens Chemical class 0.000 claims abstract description 11
- 238000004320 controlled atmosphere Methods 0.000 claims abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000007789 gas Substances 0.000 claims description 131
- 230000008569 process Effects 0.000 claims description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 26
- 238000010438 heat treatment Methods 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 abstract description 9
- 238000010348 incorporation Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 91
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 36
- 229920005591 polysilicon Polymers 0.000 description 36
- 239000000460 chlorine Substances 0.000 description 34
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 21
- 230000007246 mechanism Effects 0.000 description 16
- 230000003287 optical effect Effects 0.000 description 6
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 4
- 239000003779 heat-resistant material Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000003028 elevating effect Effects 0.000 description 3
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000043 hydrogen iodide Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- VXGHASBVNMHGDI-UHFFFAOYSA-N digermane Chemical compound [Ge][Ge] VXGHASBVNMHGDI-UHFFFAOYSA-N 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- QUZPNFFHZPRKJD-UHFFFAOYSA-N germane Chemical compound [GeH4] QUZPNFFHZPRKJD-UHFFFAOYSA-N 0.000 description 1
- 229910052986 germanium hydride Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本発明の実施形態に係るクリーニング方法を実施するための成膜装置について、複数の基板に一括で処理を行うバッチ式の縦型熱処理装置を例に挙げて説明する。但し、本発明の実施形態に係るクリーニング方法は、縦型熱処理装置とは異なる装置、例えば基板を1枚ずつ処理する枚葉式の装置にも適用可能である。図1は、本発明の実施形態に係るクリーニング方法を実施するための成膜装置の一例の概略図である。
(第1実施形態)
次に、第1実施形態に係るクリーニング方法を含む成膜方法の一例について説明する。図2は、第1実施形態に係る成膜方法の一例を示すフローチャートである。第1実施形態に係る成膜方法は、制御部50が成膜装置1の各構成部を制御することによって繰り返し実行される。
次に、第2実施形態に係るクリーニング方法を含む成膜方法の一例について説明する。図3は、第2実施形態に係る成膜方法の一例を示すフローチャートである。第2実施形態に係る成膜方法は、制御部50が成膜装置1の各構成部を制御することによって繰り返し実行される。
次に、本発明の実施形態に係るクリーニング方法による効果について、以下の実施例を用いて説明する。
実施例1では、SiCのCl2ガスに対するエッチング耐性について評価した。
Cl2ガスの流量:2000sccm
Cl2ガスの供給時間:約200分
処理容器10の壁面温度:550℃
実施例2では、実施例1よりも高い温度(600℃)でSiCのCl2ガスに対するエッチング耐性について評価した。
Cl2ガスの流量:2000sccm
Cl2ガスの供給時間:約70分
処理容器10の壁面温度:600℃
実施例3では、Cl2ガスを用いたクリーニングにより、ウエハボート20に付着したポリシリコン膜が除去されるかについて評価した。
Cl2ガスの流量:2000sccm
Cl2ガスの供給時間:5分
処理容器10の壁面の温度:600℃
実施例4では、クリーニング工程がウエハボート20に与える損傷の有無について評価した。
Cl2ガスの流量:2000sccm
Cl2ガスの供給時間:約70分
処理容器10の壁面の温度:600℃
ウエハボート20:SiC製
実施例5では、クリーニング工程が成膜工程で成膜されるポリシリコン膜の膜厚に与える影響の有無について評価した。
Cl2ガスの流量:2000sccm
Cl2ガスの供給時間:約70分
処理容器10の壁面の温度:600℃
10 処理容器
20 ウエハボート
22 クリーニングガス供給機構
W ウエハ
Claims (12)
- 処理容器内において、基板保持具に搭載された基板にシリコン膜、ゲルマニウム膜又はシリコンゲルマニウム膜を成膜する成膜処理を実行する成膜装置のクリーニング方法であって、
前記処理容器内に、前記成膜処理の後に露点管理された雰囲気で保管され、前記基板を搭載しない前記基板保持具を収容した状態で、前記処理容器内にフッ素を含まないハロゲン含有ガスを供給して前記基板保持具を含む前記処理容器内に付着している前記シリコン膜、前記ゲルマニウム膜又は前記シリコンゲルマニウム膜をエッチングして除去するクリーニング工程を含む、
クリーニング方法。 - 前記クリーニング工程は、前記成膜処理が行われるごとに実行される、
請求項1に記載のクリーニング方法。 - 前記クリーニング工程は、前記成膜処理が複数回行われた後に実行される、
請求項1に記載のクリーニング方法。 - 前記クリーニング工程は、前記処理容器の壁面を300℃以上700℃未満の温度に加熱して行われる、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記クリーニング工程は、前記処理容器の壁面を400℃以上600℃以下の温度に加熱して行われる、
請求項1乃至3のいずれか一項に記載のクリーニング方法。 - 前記基板保持具は、炭化珪素又は石英により形成されている、
請求項1乃至5のいずれか一項に記載のクリーニング方法。 - 前記基板保持具は、複数の前記基板を上下方向に所定間隔を有して略水平に保持する、
請求項1乃至6のいずれか一項に記載のクリーニング方法。 - 前記ハロゲン含有ガスは、Cl2ガス、HClガス、Br2ガス、HBrガス、又はHIガスである、
請求項1乃至7のいずれか一項に記載のクリーニング方法。 - 前記露点管理された雰囲気は、不活性ガス雰囲気、ドライエア雰囲気、又は真空雰囲気である、
請求項1乃至8のいずれか一項に記載のクリーニング方法。 - 処理容器内において、基板保持具に搭載された基板にシリコン膜、ゲルマニウム膜又はシリコンゲルマニウム膜を成膜する成膜工程と、
前記処理容器内に、前記成膜工程の後に露点管理された雰囲気で保管され、前記基板を搭載しない前記基板保持具を収容した状態で、前記処理容器内にフッ素を含まないハロゲン含有ガスを供給して前記基板保持具を含む前記処理容器内に付着している前記シリコン膜、前記ゲルマニウム膜又は前記シリコンゲルマニウム膜をエッチングして除去するクリーニング工程と、
を含む、
成膜方法。 - 前記成膜工程と前記クリーニング工程とが交互に繰り返し実行される、
請求項10に記載の成膜方法。 - 前記成膜工程が複数回行われた後に前記クリーニング工程が実行される、
請求項10に記載の成膜方法。
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US10676820B2 (en) | 2020-06-09 |
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