JP2019075542A - バッチ式プラズマ基板処理装置 - Google Patents
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 230000002035 prolonged effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
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Abstract
Description
110:チューブ
120:噴射口
130:プラズマ反応部
131:接地電極部
132:電源供給電極部
133:隔壁
140:基板支持部
150:排気部
151:排気部材
152:排気ライン
153:排気口
160:ガス供給管、反応ガス供給管
161:供給口
170:セラミック管
180:可変電源供給部
181:可変キャパシター
182:電源部
190:ソースガス供給管
Claims (11)
- 複数枚の基板が処理される処理空間を提供するチューブと、
前記処理空間において前記複数枚の基板を第1の方向に積載する基板支持部と、
前記基板が処理される工程に必要な工程ガスを前記チューブ内に供給するガス供給管と、
前記チューブと連通されて前記処理空間内の工程残渣を外部に排気する排気部と、
前記チューブから延び、プラズマが形成される放電空間を画成する隔壁によって前記処理空間と仕切られ、前記ガス供給管から供給された工程ガスをプラズマ分解し、前記処理空間に分解された工程ガスを与えるプラズマ反応部と、
を備え、
前記プラズマ反応部は、
前記放電空間に収容されて前記第1の方向に延びる複数の電源供給電極部と、
前記複数の電源供給電極部の間に配設され、前記第1の方向に延びる接地電極部と、
を備える基板処理装置。 - 前記複数の電源供給電極部及び接地電極部は互いに離間して電気的に分離され、前記プラズマは、容量結合プラズマ(CCP)である請求項1に記載の基板処理装置。
- 前記複数の電源供給電極部のそれぞれにRF電源が印加され、前記RF電源の大きさ又は比率を制御して供給する可変電源供給部をさらに備える請求項1に記載の基板処理装置。
- 前記可変電源供給部は、
前記複数の電源供給電極部にRF電源を供給する電源部と、
前記電源部と複数の電源供給電極部との間にそれぞれ配設される複数の可変キャパシターと、
を備える請求項3に記載の基板処理装置。 - 前記可変電源供給部は、前記複数の電源供給電極部及び接地電極部の間の空間にそれぞれ配設されて前記プラズマの放電特性値を測定する探針棒をさらに備え、
前記探針棒から測定された放電特性値によって前記RF電源の大きさ又は比率が調節される請求項3に記載の基板処理装置。 - 前記複数の電源供給電極部及び接地電極部の外周面を囲むセラミック管をさらに備える請求項1に記載の基板処理装置。
- 前記複数の電源供給電極部及び接地電極部は、前記チューブの周方向に沿って互いに離間して配置され、
前記ガス供給管は、前記第1の方向に延びて複数配設され、前記複数の電源供給電極部の外側にそれぞれ配設される請求項1に記載の基板処理装置。 - 前記ガス供給管は、前記第1の方向に配列される複数の供給口を備え、
前記ガス供給管の供給口は、前記電源供給電極部に対して反対の方向を向くように形成される請求項1に記載の基板処理装置。 - 前記ガス供給管は、前記第1の方向に延びて前記電源供給電極部及び接地電極部をつなぐ線から外側に複数配設され、
前記ガス供給管の供給口は、前記電源供給電極部及び接地電極部の間の空間とそれぞれ対向するように配設される請求項8に記載の基板処理装置。 - 前記プラズマ反応部は、前記電源供給電極部及び基板支持部と対応して前記第1の方向に配列される複数の噴射口を備え、
前記噴射口及び供給口は、前記チューブの中心軸から前記供給口までの半径方向に対して互いにずれるように配設される請求項8に記載の基板処理装置。 - 前記ガス供給管は、
前記プラズマ反応部に反応ガスを供給する反応ガス供給管と、
前記処理空間にソースガスを供給するソースガス供給管と、
を備え、
前記プラズマ反応部は、前記反応ガスをプラズマ分解させる請求項1に記載の基板処理装置。
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KR10-2017-0129740 | 2017-10-11 | ||
KR1020170129740A KR101931692B1 (ko) | 2017-10-11 | 2017-10-11 | 배치식 플라즈마 기판처리장치 |
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JP7496005B2 (ja) | 2022-02-10 | 2024-06-05 | ユ-ジーン テクノロジー カンパニー.リミテッド | バッチ式基板処理装置 |
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TWI697049B (zh) | 2020-06-21 |
US11183372B2 (en) | 2021-11-23 |
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