JP2018003067A - 成膜方法 - Google Patents
成膜方法 Download PDFInfo
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- JP2018003067A JP2018003067A JP2016128394A JP2016128394A JP2018003067A JP 2018003067 A JP2018003067 A JP 2018003067A JP 2016128394 A JP2016128394 A JP 2016128394A JP 2016128394 A JP2016128394 A JP 2016128394A JP 2018003067 A JP2018003067 A JP 2018003067A
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- voltage
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- 238000000151 deposition Methods 0.000 title abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000001301 oxygen Substances 0.000 claims abstract description 39
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 39
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 51
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 13
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 20
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 20
- 239000000758 substrate Substances 0.000 abstract description 20
- 230000008021 deposition Effects 0.000 abstract description 3
- 239000011261 inert gas Substances 0.000 abstract 2
- 239000010408 film Substances 0.000 description 86
- 238000005546 reactive sputtering Methods 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000012495 reaction gas Substances 0.000 description 7
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000005415 magnetization Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (1)
- 真空チャンバ内に被成膜物とアルミニウム製のターゲットとを配置し、真空雰囲気中の真空チャンバ内に希ガスと酸素含有ガスとを導入し、ターゲットに所定電力を投入してターゲットをスパッタリングすることで被成膜物の表面に酸化アルミニウム膜を成膜する成膜方法において、
真空チャンバ内に希ガスのみを導入し、ターゲットに所定電力を投入して真空チャンバ内で放電させたときの放電電圧を第1電圧、この第1電圧が維持される真空チャンバ内の酸素の分圧を基準分圧、酸素の分圧が基準分圧より高くなって第1電圧より低い第2電圧まで放電電圧が降下したときの酸素含有ガスの導入量を第1導入量として、
ターゲットのスパッタリングによる成膜当初、第1導入量より多い第2導入量で酸素含有ガスを導入し、放電電圧が第1電圧から第2電圧に降下し、当該放電電圧が第2電圧の状態でターゲットをスパッタリングする第1工程と、
第1導入量より少ない第3導入量で酸素含有ガスを導入し、当該放電電圧が第2電圧に維持された状態でターゲットをスパッタリングする第2工程とを含むことを特徴とする成膜方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016128394A JP6734711B2 (ja) | 2016-06-29 | 2016-06-29 | 成膜方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2016128394A JP6734711B2 (ja) | 2016-06-29 | 2016-06-29 | 成膜方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018003067A true JP2018003067A (ja) | 2018-01-11 |
JP6734711B2 JP6734711B2 (ja) | 2020-08-05 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016128394A Active JP6734711B2 (ja) | 2016-06-29 | 2016-06-29 | 成膜方法 |
Country Status (1)
Country | Link |
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JP (1) | JP6734711B2 (ja) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004076105A (ja) * | 2002-05-29 | 2004-03-11 | Kobe Steel Ltd | 反応性スパッタリング方法 |
JP2005281851A (ja) * | 2004-03-26 | 2005-10-13 | Applied Films Gmbh & Co Kg | 反応スパッタリング用デバイス |
JP2014114497A (ja) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | スパッタ装置 |
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2016
- 2016-06-29 JP JP2016128394A patent/JP6734711B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004076105A (ja) * | 2002-05-29 | 2004-03-11 | Kobe Steel Ltd | 反応性スパッタリング方法 |
JP2005281851A (ja) * | 2004-03-26 | 2005-10-13 | Applied Films Gmbh & Co Kg | 反応スパッタリング用デバイス |
JP2014114497A (ja) * | 2012-12-12 | 2014-06-26 | Ulvac Japan Ltd | スパッタ装置 |
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JP6734711B2 (ja) | 2020-08-05 |
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