JP2017512998A - 偏光パラメータを測定するための測定装置 - Google Patents
偏光パラメータを測定するための測定装置 Download PDFInfo
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- JP2017512998A JP2017512998A JP2016558733A JP2016558733A JP2017512998A JP 2017512998 A JP2017512998 A JP 2017512998A JP 2016558733 A JP2016558733 A JP 2016558733A JP 2016558733 A JP2016558733 A JP 2016558733A JP 2017512998 A JP2017512998 A JP 2017512998A
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- 230000010287 polarization Effects 0.000 title claims abstract description 199
- 238000005259 measurement Methods 0.000 claims abstract description 211
- 230000005855 radiation Effects 0.000 claims abstract description 79
- 230000003287 optical effect Effects 0.000 claims abstract description 78
- 238000005286 illumination Methods 0.000 claims abstract description 20
- 238000001514 detection method Methods 0.000 claims abstract description 13
- 230000001419 dependent effect Effects 0.000 claims abstract description 10
- 230000003993 interaction Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 25
- 230000008859 change Effects 0.000 claims description 20
- 230000001678 irradiating effect Effects 0.000 claims 2
- 230000004075 alteration Effects 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000013598 vector Substances 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 238000002983 circular dichroism Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000001393 microlithography Methods 0.000 description 2
- 238000010008 shearing Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000011149 active material Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 238000002267 linear dichroism spectroscopy Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70566—Polarisation control
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
- G01M11/02—Testing optical properties
- G01M11/0285—Testing optical properties by measuring material or chromatic transmission properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Of Optical Devices Or Fibers (AREA)
Abstract
Description
半波長板30D(ジョーンズベクトル
は、後述するようにZ2,Z3及び光学系50の開口数NAから測定することができ、
,Z2,Z3は、フィールド点座標の関数である:
12 照明系
14 光放射
16 放射源
18 偏光子
20 偏光回転装置
22 測定マスク
23 物体平面
24 測定構造体
26 フィールド点
28 偏光変化装置
30 偏光操作素子
30A,30B,30C,30D 半波長板
31 速軸
32 検出モジュール
34 結像平面
36 回折格子
38 変位装置
40 移動方向
42 コンデンサー光学ユニット
44 検出器
46 評価ユニット
48 測定レチクル
50 光学系
52 測定フィールド
54 測定点
56 測定チャネル
Claims (14)
- 光学系の偏光パラメータを測定するための測定系であって、
光放射を供給する照明系と、
前記照明系と前記光学系との間に配置される測定マスクであって、前記測定マスクの複数のフィールド点に配置される測定構造体を備える測定マスクと、
前記光放射のビーム経路に配置され、前記フィールド点の1つのフィールド点が第1の偏光状態にある前記光放射で照射され、同時に、前記フィールド点のうち別のフィールド点が第2の偏光状態にある前記光放射で照射されるように、フィールド点依存方法で前記光放射の偏光状態を変化させるように構成される偏光変化装置と、
前記光学系との相互作用後に、前記光放射を検出するように構成される検出モジュールと、
を備える測定系。 - 前記偏光変化装置は、前記入射した光放射を回転させるための少なくとも1つの偏光回転素子を備える、請求項1に記載の測定系。
- 前記偏光変化装置は、少なくとも1つの半波長板を備える、請求項1または2に記載の測定系。
- 前記偏光変化装置は、少なくとも1つの1/4波長板を備える、請求項1〜3のいずれか1項に記載の測定系。
- 前記測定構造体は、複数の測定フィールドに配置され、前記偏光変化装置は、前記光放射の偏光状態をフィールド点依存方法で同じ変化パターンを有する各測定フィールド内で変化させるように構成される、請求項1〜4のいずれか1項に記載の測定系。
- 前記偏光変化装置は、前記測定マスクに固定される、請求項1〜5のいずれか1項に記載の測定系。
- 波面測定系として構成される、請求項1〜6のいずれか1項に記載の測定系。
- 前記検出モジュールは、回折格子を備える、請求項1〜7のいずれか1項に記載の測定系。
- 前記照明系は、異なる偏光状態で連続的に前記光放射を供給するように構成される、請求項1〜8のいずれか1項に記載の測定系。
- 前記照明系は、直線偏光状態にある前記光放射を供給するように構成される、請求項1〜9のいずれか1項に記載の測定系。
- 投影レンズ及び請求項1〜10のいずれか1項に記載の測定系を備えるマイクロリソグラフィー投影露光装置であって、
前記測定系は、前記投影レンズの偏光パラメータを測定するように構成される、マイクロリソグラフィー投影露光装置。 - 光学系の偏光パラメータを測定するための方法であって、
測定構造体を備える測定マスクを提供するステップであって、前記測定構造体は、前記測定マスクの複数のフィールド点に配置される、ステップと、
フィールド点依存偏光パターンで光放射が前記測定マスクの上に照射されるステップであって、前記フィールド点のうち1つのフィールド点が第1の偏光状態にある前記光放射で照射され、同時に、前記フィールド点のうち別のフィールド点が第2の偏光状態にある前記光放射で照射される、ステップと、
前記測定マスクとの相互作用および前記光学系との後続の相互作用の後に、前記光放射が検出され、前記光学系の前記偏光パラメータが前記検出された光放射から測定されるステップと、
を有する光学系の偏光パラメータを測定する方法。 - 請求項1〜10のいずれか1項に記載の測定系によって実行される、請求項12に記載の方法。
- 前記光学系の前記偏光パラメータを測定する際に、前記光学系の方位ゼルニケ係数が前記検出された光放射から測定される、請求項12または13に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014205406.0 | 2014-03-24 | ||
DE102014205406.0A DE102014205406A1 (de) | 2014-03-24 | 2014-03-24 | Messvorrichtung zum Bestimmen eines Polarisationsparameters |
PCT/EP2015/000537 WO2015144291A1 (de) | 2014-03-24 | 2015-03-11 | Messvorrichtung zum bestimmen eines polarisationsparameters |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017512998A true JP2017512998A (ja) | 2017-05-25 |
JP6543642B2 JP6543642B2 (ja) | 2019-07-10 |
Family
ID=53673050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2016558733A Active JP6543642B2 (ja) | 2014-03-24 | 2015-03-11 | 偏光パラメータを測定するための測定装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10042264B2 (ja) |
EP (1) | EP3123247B1 (ja) |
JP (1) | JP6543642B2 (ja) |
KR (1) | KR102004029B1 (ja) |
DE (1) | DE102014205406A1 (ja) |
WO (1) | WO2015144291A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210029106A (ko) * | 2019-09-04 | 2021-03-15 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 마스크의 특징을 구하는 장치 및 방법 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102018211853A1 (de) | 2018-07-17 | 2020-01-23 | Carl Zeiss Smt Gmbh | Verfahren und Vorrichtung zur Charakterisierung der Oberflächenform eines optischen Elements |
DE102019209213A1 (de) * | 2019-06-26 | 2020-12-31 | Q.ant GmbH | Sensoranordnung zur Charakterisierung von Partikeln |
Citations (4)
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DE102008001448A1 (de) * | 2007-07-06 | 2009-01-08 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Messen mindestens eines Abbildungsfehlers eines optischen Abbildungssystems |
JP2009103677A (ja) * | 2007-10-03 | 2009-05-14 | Nikon Corp | 光学系の偏光特性算出方法及び装置、光学系の偏光特性算出用プログラム及び当該プログラムを記録したコンピュータ読み取り可能な記録媒体、並びに露光方法及び装置 |
JP2011053664A (ja) * | 2009-08-07 | 2011-03-17 | Toshiba Corp | 偏光評価マスク、露光装置、及び偏光評価方法 |
WO2012118079A1 (ja) * | 2011-02-28 | 2012-09-07 | 国立大学法人香川大学 | 光学特性測定装置及び光学特性測定方法 |
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EP1818658A1 (en) * | 2006-02-08 | 2007-08-15 | Carl Zeiss SMT AG | Method for approximating the influence of an optical system on the state of polarisation of optical radiation |
DE102007010650A1 (de) * | 2007-03-02 | 2008-09-04 | Carl Zeiss Smt Ag | Beleuchtungseinrichtung einer mikrolithographischen Projektionsbelichtungsanlage |
DE102007055062A1 (de) | 2007-11-16 | 2009-05-28 | Carl Zeiss Smt Ag | Optisches System, sowie Verfahren zur Charakterisierung eines optischen Systems |
DE102008002247A1 (de) | 2008-06-05 | 2009-12-10 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Bestimmen einer optischen Eigenschaft eines optischen Systems |
DE102009015393B3 (de) | 2009-03-20 | 2010-09-02 | Carl Zeiss Smt Ag | Messverfahren und Messsystem zur Messung der Doppelbrechung |
CN103154818B (zh) * | 2010-09-28 | 2015-07-15 | 卡尔蔡司Smt有限责任公司 | 微光刻投射曝光设备的光学系统以及降低图像位置误差的方法 |
-
2014
- 2014-03-24 DE DE102014205406.0A patent/DE102014205406A1/de not_active Ceased
-
2015
- 2015-03-11 EP EP15738586.5A patent/EP3123247B1/de active Active
- 2015-03-11 WO PCT/EP2015/000537 patent/WO2015144291A1/de active Application Filing
- 2015-03-11 JP JP2016558733A patent/JP6543642B2/ja active Active
- 2015-03-11 KR KR1020167029049A patent/KR102004029B1/ko active IP Right Grant
-
2016
- 2016-09-26 US US15/275,686 patent/US10042264B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102008001448A1 (de) * | 2007-07-06 | 2009-01-08 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Messen mindestens eines Abbildungsfehlers eines optischen Abbildungssystems |
JP2009103677A (ja) * | 2007-10-03 | 2009-05-14 | Nikon Corp | 光学系の偏光特性算出方法及び装置、光学系の偏光特性算出用プログラム及び当該プログラムを記録したコンピュータ読み取り可能な記録媒体、並びに露光方法及び装置 |
JP2011053664A (ja) * | 2009-08-07 | 2011-03-17 | Toshiba Corp | 偏光評価マスク、露光装置、及び偏光評価方法 |
WO2012118079A1 (ja) * | 2011-02-28 | 2012-09-07 | 国立大学法人香川大学 | 光学特性測定装置及び光学特性測定方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20210029106A (ko) * | 2019-09-04 | 2021-03-15 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 마스크의 특징을 구하는 장치 및 방법 |
KR102450331B1 (ko) | 2019-09-04 | 2022-10-04 | 칼 짜이스 에스엠티 게엠베하 | 마이크로리소그래피 마스크의 특징을 구하는 장치 및 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP3123247A1 (de) | 2017-02-01 |
KR20160134810A (ko) | 2016-11-23 |
JP6543642B2 (ja) | 2019-07-10 |
DE102014205406A1 (de) | 2015-09-24 |
US20170010539A1 (en) | 2017-01-12 |
EP3123247B1 (de) | 2020-12-30 |
US10042264B2 (en) | 2018-08-07 |
WO2015144291A1 (de) | 2015-10-01 |
KR102004029B1 (ko) | 2019-07-25 |
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