JP2017228798A - 熱式流量計 - Google Patents
熱式流量計 Download PDFInfo
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- JP2017228798A JP2017228798A JP2017173632A JP2017173632A JP2017228798A JP 2017228798 A JP2017228798 A JP 2017228798A JP 2017173632 A JP2017173632 A JP 2017173632A JP 2017173632 A JP2017173632 A JP 2017173632A JP 2017228798 A JP2017228798 A JP 2017228798A
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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Abstract
【解決手段】被計測流体を採り込む副通路と、前記副通路内の被計測流体の流量を計測するセンサ素子と、被計測流体の温度を検出する温度検出素子と、前記センサ素子の加熱温度を制御する駆動回路と、ノイズから前記駆動回路を保護する保護回路と、を備え、前記センサ素子の基板に空洞部が形成され、前記空洞部上の薄膜部には電気絶縁膜を介して発熱抵抗体が形成されており、前記薄膜部の温度分布から流量を検出する熱式流量計において、前記センサ素子と前記駆動回路は、金属のリードフレームに実装され、前記センサ素子および前記駆動回路および前記リードフレームは、全周を熱硬化性樹脂で封止することによりチップパッケージされ、少なくとも駆動回路を保護するためのチップ部品あるいは空気温度検出素子のどちらか一方を、前記チップパッケージの内部に混載した。
【選択図】 図1
Description
2 センサ素子
3 駆動回路
4 チップコンデンサ(保護回路)
5 チップサーミスタ(空気温度検出素子)
6 リードフレーム
7a 接着剤
7b 導電性接着剤
8a、8b 金線ワイヤー
9 熱硬化性樹脂(封止樹脂)
10 空洞部
11 薄膜部(流量検出部)
12 入出力端子
13 通路
14 出口部
15 筐体
16 吸気管路
17 副通路
18 回路室
19 境界部
20 コネクタ
21 コネクタ端子
Claims (9)
- 被計測流体の流量を計測するセンサ素子と、前記センサ素子と電気的に接続されるLSIと、を備え、前記センサ素子の基板に空洞部が形成され、前記空洞部上の薄膜部には電気絶縁膜を介して発熱抵抗体が形成されたチップパッケージにおいて、
前記LSIと前記LSIを保護するためのチップ部品は、金属のリードフレーム上に実装され、前記LSIおよび前記リードフレームは、熱硬化性樹脂で封止され、
前記リードフレームは、一端側が前記熱硬化性樹脂から突出し、外部との信号の入出力を行う入出力端子部と、前記駆動回路が実装される実装部と、を有しており、
前記入出力端子部は、前記実装部と一体に形成されている端子と、前記実装部とは独立して形成され、前記駆動回路とワイヤボンディングを介して電気的に接続されている端子とを、有しており、
前記チップ部品は、前記実装部と一体に形成されている端子と前記実装部とは独立して形成されている端子とを橋渡しするように前記リードフレーム上に導電性接着材を介して直接実装されていることを特徴とするチップパッケージ。 - 前記薄膜部は、前記熱硬化性樹脂から部分的に露出していることを特徴とする請求項1に記載のチップパッケージ。
- 前記空洞部と前記熱硬化性樹脂の外部とを連通する連通機構を有することを特徴とする請求項1あるいは2に記載のチップパッケージ。
- 前記センサ素子と前記LSIと前記連通機構とを、同一直線方向に配置したことを特徴とする請求項3に記載のチップパッケージ。
- 前記センサ素子と前記連通機構の外部と連通する側の開口孔との間に前記LSIを配置したことを特徴とする請求項4に記載のチップパッケージ。
- 前記チップパッケージは、前記被計測流体の温度を検出する温度検出素子を備え、
前記チップパッケージの形状は、前記温度検出素子を配置した部分のみ突出した形状である請求項1に記載のチップパッケージ。 - 前記チップパッケージから前記リードフレームの一部が突出しており、前記突出方向とは反対の位置に前記温度検出素子を配置したことを特徴とする請求項6に記載のチップパッケージ。
- 前記センサ素子と前記LSIのチップ高さが異なることを特徴とする請求項5に記載のチップパッケージ。
- 前記LSIのチップ高さは、前記センサ素子のチップ高さより低いことを特徴とする請求項9に記載のチップパッケージ。
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JP2017081045A Division JP6215502B2 (ja) | 2017-04-17 | 2017-04-17 | 熱式流量計 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2019146878A (ja) * | 2018-02-28 | 2019-09-05 | オムロン株式会社 | センサ装置、メダル選別装置および遊技機 |
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JP7164282B2 (ja) | 2020-03-10 | 2022-11-01 | 日立Astemo株式会社 | 空気流量測定装置 |
Citations (10)
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JPH11173885A (ja) * | 1997-12-15 | 1999-07-02 | Mitsui Mining & Smelting Co Ltd | 流量計 |
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JP2009250726A (ja) * | 2008-04-03 | 2009-10-29 | Denso Corp | 流量センサ |
JP2010112804A (ja) * | 2008-11-05 | 2010-05-20 | Denso Corp | 熱式フローセンサの製造方法及び熱式フローセンサ |
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US20100212433A1 (en) * | 2009-02-25 | 2010-08-26 | Werner Hunziker | Sensor in a moulded package and a method for manufacturing the same |
JP2010219244A (ja) * | 2009-03-16 | 2010-09-30 | Sanken Electric Co Ltd | 半導体装置及び半導体装置製造方法 |
US20110140211A1 (en) * | 2009-12-11 | 2011-06-16 | Hitachi Automotive Systems, Ltd. | Flow Sensor, Method for Manufacturing Flow Sensor and Flow Sensor Module |
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2017
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Patent Citations (11)
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JPH11173885A (ja) * | 1997-12-15 | 1999-07-02 | Mitsui Mining & Smelting Co Ltd | 流量計 |
WO2002010694A1 (fr) * | 2000-07-27 | 2002-02-07 | Hitachi, Ltd. | Debitmetre a air de type thermique |
US20070126088A1 (en) * | 2005-12-05 | 2007-06-07 | Honeywell International Inc. | Chip on lead frame for small package speed sensor |
JP2008175780A (ja) * | 2007-01-22 | 2008-07-31 | Denso Corp | 熱式流量センサ |
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JP2010112804A (ja) * | 2008-11-05 | 2010-05-20 | Denso Corp | 熱式フローセンサの製造方法及び熱式フローセンサ |
JP2010151542A (ja) * | 2008-12-24 | 2010-07-08 | Denso Corp | 感熱式流量センサ |
US20100212433A1 (en) * | 2009-02-25 | 2010-08-26 | Werner Hunziker | Sensor in a moulded package and a method for manufacturing the same |
JP2010219244A (ja) * | 2009-03-16 | 2010-09-30 | Sanken Electric Co Ltd | 半導体装置及び半導体装置製造方法 |
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JP2019146878A (ja) * | 2018-02-28 | 2019-09-05 | オムロン株式会社 | センサ装置、メダル選別装置および遊技機 |
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