JP2017204574A - サファイアウェーハの加工方法及びレーザー加工装置 - Google Patents

サファイアウェーハの加工方法及びレーザー加工装置 Download PDF

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Publication number
JP2017204574A
JP2017204574A JP2016095940A JP2016095940A JP2017204574A JP 2017204574 A JP2017204574 A JP 2017204574A JP 2016095940 A JP2016095940 A JP 2016095940A JP 2016095940 A JP2016095940 A JP 2016095940A JP 2017204574 A JP2017204574 A JP 2017204574A
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JP
Japan
Prior art keywords
sapphire wafer
modified layer
laser processing
laser beam
processing conditions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016095940A
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English (en)
Japanese (ja)
Inventor
太朗 荒川
Taro Arakawa
太朗 荒川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Abrasive Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Abrasive Systems Ltd filed Critical Disco Abrasive Systems Ltd
Priority to JP2016095940A priority Critical patent/JP2017204574A/ja
Priority to TW106111013A priority patent/TWI703003B/zh
Priority to KR1020170056797A priority patent/KR102250212B1/ko
Priority to CN201710320034.2A priority patent/CN107363413B/zh
Publication of JP2017204574A publication Critical patent/JP2017204574A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
JP2016095940A 2016-05-12 2016-05-12 サファイアウェーハの加工方法及びレーザー加工装置 Pending JP2017204574A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2016095940A JP2017204574A (ja) 2016-05-12 2016-05-12 サファイアウェーハの加工方法及びレーザー加工装置
TW106111013A TWI703003B (zh) 2016-05-12 2017-03-31 藍寶石晶圓的加工方法及雷射加工裝置
KR1020170056797A KR102250212B1 (ko) 2016-05-12 2017-05-04 사파이어 웨이퍼의 가공 방법 및 레이저 가공 장치
CN201710320034.2A CN107363413B (zh) 2016-05-12 2017-05-09 蓝宝石晶片的加工方法和激光加工装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016095940A JP2017204574A (ja) 2016-05-12 2016-05-12 サファイアウェーハの加工方法及びレーザー加工装置

Publications (1)

Publication Number Publication Date
JP2017204574A true JP2017204574A (ja) 2017-11-16

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Family Applications (1)

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JP2016095940A Pending JP2017204574A (ja) 2016-05-12 2016-05-12 サファイアウェーハの加工方法及びレーザー加工装置

Country Status (4)

Country Link
JP (1) JP2017204574A (zh)
KR (1) KR102250212B1 (zh)
CN (1) CN107363413B (zh)
TW (1) TWI703003B (zh)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109531840A (zh) * 2018-11-29 2019-03-29 武汉畅新科技发展有限公司 Led晶圆片的切割装置
KR20190064434A (ko) * 2017-11-30 2019-06-10 가부시기가이샤 디스코 웨이퍼의 레이저 가공 방법
WO2020090901A1 (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN112388187A (zh) * 2019-08-02 2021-02-23 株式会社迪思科 激光加工装置
CN113039038A (zh) * 2018-10-30 2021-06-25 浜松光子学株式会社 激光加工装置及激光加工方法
WO2021177363A1 (ja) * 2020-03-06 2021-09-10 浜松ホトニクス株式会社 検査装置及び検査方法
WO2021182251A1 (ja) * 2020-03-10 2021-09-16 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
WO2021182252A1 (ja) * 2020-03-10 2021-09-16 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
WO2021205963A1 (ja) * 2020-04-06 2021-10-14 浜松ホトニクス株式会社 検査装置及び検査方法
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003266185A (ja) * 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法
JP2005169407A (ja) * 2003-12-08 2005-06-30 Disco Abrasive Syst Ltd レーザー加工された変質層の確認方法
JP2013016703A (ja) * 2011-07-05 2013-01-24 Disco Abrasive Syst Ltd サファイア基板の加工方法
JP2013258253A (ja) * 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd ウエーハの加工方法およびレーザー加工装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
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KR19990071140A (ko) * 1998-02-27 1999-09-15 윤종용 반도체 검사설비의 레이저 스캐터링장치
JP2007266190A (ja) * 2006-03-28 2007-10-11 Sokudo:Kk 基板周縁部露光装置
JP2009140958A (ja) * 2007-12-03 2009-06-25 Tokyo Seimitsu Co Ltd レーザーダイシング装置及びダイシング方法
JP5797963B2 (ja) * 2011-07-25 2015-10-21 株式会社ディスコ レーザー光線のスポット形状検出方法
JP5140198B1 (ja) * 2011-07-27 2013-02-06 東芝機械株式会社 レーザダイシング方法
JP5886603B2 (ja) 2011-11-11 2016-03-16 株式会社ディスコ 光デバイスウエーハの加工方法
JP5980504B2 (ja) * 2011-12-27 2016-08-31 株式会社ディスコ ウエーハの加工方法およびレーザー加工装置
JP6261844B2 (ja) * 2012-02-20 2018-01-17 株式会社ディスコ レーザー加工方法およびレーザー加工装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003266185A (ja) * 2002-03-12 2003-09-24 Hamamatsu Photonics Kk レーザ加工方法
JP2005169407A (ja) * 2003-12-08 2005-06-30 Disco Abrasive Syst Ltd レーザー加工された変質層の確認方法
JP2013016703A (ja) * 2011-07-05 2013-01-24 Disco Abrasive Syst Ltd サファイア基板の加工方法
JP2013258253A (ja) * 2012-06-12 2013-12-26 Disco Abrasive Syst Ltd ウエーハの加工方法およびレーザー加工装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102525264B1 (ko) 2017-11-30 2023-04-24 가부시기가이샤 디스코 웨이퍼의 레이저 가공 방법
KR20190064434A (ko) * 2017-11-30 2019-06-10 가부시기가이샤 디스코 웨이퍼의 레이저 가공 방법
CN113039038B (zh) * 2018-10-30 2023-10-20 浜松光子学株式会社 激光加工装置及激光加工方法
WO2020090901A1 (ja) * 2018-10-30 2020-05-07 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN113039038A (zh) * 2018-10-30 2021-06-25 浜松光子学株式会社 激光加工装置及激光加工方法
US11897056B2 (en) 2018-10-30 2024-02-13 Hamamatsu Photonics K.K. Laser processing device and laser processing method
US11833611B2 (en) 2018-10-30 2023-12-05 Hamamatsu Photonics K.K. Laser machining device
CN109531840A (zh) * 2018-11-29 2019-03-29 武汉畅新科技发展有限公司 Led晶圆片的切割装置
CN112388187A (zh) * 2019-08-02 2021-02-23 株式会社迪思科 激光加工装置
WO2021177363A1 (ja) * 2020-03-06 2021-09-10 浜松ホトニクス株式会社 検査装置及び検査方法
WO2021182251A1 (ja) * 2020-03-10 2021-09-16 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP2021142531A (ja) * 2020-03-10 2021-09-24 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP2021142529A (ja) * 2020-03-10 2021-09-24 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
WO2021182252A1 (ja) * 2020-03-10 2021-09-16 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP7441684B2 (ja) 2020-03-10 2024-03-01 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
JP7441683B2 (ja) 2020-03-10 2024-03-01 浜松ホトニクス株式会社 レーザ加工装置、及び、レーザ加工方法
WO2021205963A1 (ja) * 2020-04-06 2021-10-14 浜松ホトニクス株式会社 検査装置及び検査方法

Also Published As

Publication number Publication date
CN107363413B (zh) 2021-01-12
CN107363413A (zh) 2017-11-21
TWI703003B (zh) 2020-09-01
TW201739558A (zh) 2017-11-16
KR102250212B1 (ko) 2021-05-07
KR20170128099A (ko) 2017-11-22

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