JP2017112239A - Substrate processing method, substrate processing system, substrate processing device, and computer-readable storage medium having substrate processing program stored therein - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent a residue deposited on a substrate from being transferred and deposited to another substrate during substrate transportation.SOLUTION: In the present invention, after a surface treatment on a substrate (wafer W), a coating film (91) to cover a residue deposited on an edge portion of a backside of the substrate (wafer W) in the surface treatment is formed and then, the substrate (wafer W) is put in a transport container (carrier C). Further, in the invention, the substrate (wafer W) on which the coating film (91) is formed on the edge portion after the surface treatment is taken out from the transport container (carrier C) and then, the residue is removed from the substrate (wafer W) together with the coating film (91). The invention is applicable to a substrate processing method, a substrate processing system (1), substrate processing devices (2, 3), and a computer-readable storage medium having a substrate processing program stored therein.SELECTED DRAWING: Figure 10

Description

  The present invention relates to a substrate processing method, a substrate processing system, a substrate processing apparatus, and a computer-readable storage medium that stores a substrate processing program, after processing the surface of a substrate and storing and transporting the substrate in a transport container.

  When manufacturing a semiconductor component, a flat panel display, or the like, various processes such as cleaning and etching are performed on a substrate such as a semiconductor wafer or a liquid crystal substrate using a substrate processing apparatus. A plurality of processed substrates are accommodated in a transfer container (carrier) and transferred to another substrate processing apparatus or the like.

  For example, in the substrate processing apparatus (etching apparatus) disclosed in Patent Document 1, plasma etching is performed on the surface of one substrate to form a wiring pattern, and then a plurality of etched substrates are used as a transfer container. It is accommodated and transferred to another substrate processing apparatus that performs processing such as subsequent cleaning.

  Supporting pieces are provided on the transport container at predetermined intervals in the vertical direction. And a conveyance container supports the board | substrate of several sheets up and down by supporting the back surface outer periphery part of a board | substrate one by one with the support piece arranged in parallel up and down.

JP 2010-27786 A

  When the surface of a substrate is processed with a substrate processing apparatus, processing residues (for example, polymers) are not completely removed from the substrate and remain on the edge of the substrate (especially the outer peripheral edge of the back surface or the outer edge). May end up.

  When the substrate is transported in a transport container with residue remaining on the edge of the substrate, the substrate edge and the support piece rub against each other inside the transport container, and the upper substrate edge There is a possibility that the residue is transferred to the surface of the substrate below the portion, and the subsequent processing of the substrate cannot be performed satisfactorily.

  For example, when performing the above-described plasma etching treatment, due to the characteristics of the apparatus, the plasma processing gas may circulate not only on the surface of the substrate but also on the edge of the substrate, and etching residues may adhere to the edge of the substrate. is there. If the substrate with the etching residue attached to the edge is accommodated in the transfer container and transferred as it is, the etching residue may transfer to another substrate in the transfer container during the transfer.

  Therefore, in the above plasma etching process, a method of reducing the adhesion of etching residues to the edge of the substrate at the expense of the etching performance to the surface of the substrate, or a laser for specific etching residues was used. A method of removing with an expensive apparatus is being studied. However, there are limitations such as a decrease in etching performance and a limitation of residues that can be removed, and this is not a general solution.

  Therefore, in the present invention, in the substrate processing method, a surface treatment step for treating the surface of the substrate, and a residue adhered to the edge portion of the back surface of the substrate after the surface treatment step by the surface treatment. It was decided to have a film forming process for forming a film and a substrate housing process for housing the substrate after the film forming process in a transfer container.

  Moreover, the said film formation process decided to form the said film in the range of the inner peripheral side rather than the part by which the back surface of the said board | substrate is hold | maintained inside the said conveyance container.

  Moreover, the said film formation process decided to form the said film also on the surface of the said board | substrate.

  Further, in the present invention, in the substrate processing method, the substrate removing step of taking out the substrate on which the film for covering the residue attached by the surface treatment is formed on the edge of the back surface after processing the surface from the transport container. And a film removing step of removing the residue together with the film from the substrate after the substrate removing step.

  Moreover, the said film removal process decided to remove the said film from the surface of the said board | substrate, after removing the said film from the edge part of the said board | substrate.

  Further, in the present invention, in the substrate processing system, the surface treatment unit that treats the surface of the substrate and the residue adhered to the edge of the back surface of the substrate treated by the surface treatment unit are covered with the surface treatment. A film forming part for forming the film, a substrate accommodating part for accommodating the substrate on which the film has been formed in the film forming part in a conveying container, and a substrate taking out the substrate accommodated in the substrate accommodating part from the conveying container And a film removing unit that removes the residue together with the film from the substrate taken out by the substrate take-out part.

  Further, in the present invention, in the substrate processing apparatus, the surface treatment unit that treats the surface of the substrate and the residue attached by the surface treatment on the edge of the back surface of the substrate treated by the surface treatment unit are covered. A film forming part for forming the film and a substrate housing part for housing the substrate on which the film has been formed in the film forming part in a transport container.

  Moreover, the said film formation part decided to form the said film in the range of the inner peripheral side rather than the part by which the back surface of the said board | substrate is hold | maintained inside the said conveyance container.

  In addition, the coating film forming section forms the coating film on the surface of the substrate.

  Further, in the present invention, in the substrate processing apparatus, a substrate take-out unit for taking out from the transport container a substrate on which a film for covering the residue adhering to the surface treatment is formed on the edge of the back surface after the surface is treated. And a film removing unit for removing the residue together with the film from the substrate taken out by the substrate taking-out part.

  Moreover, the said film removal part decided to remove the said film from the surface of the said board | substrate, after removing the said film from the edge part of the said board | substrate.

  According to the present invention, in a computer-readable storage medium storing a substrate processing program for processing a substrate using a substrate processing apparatus, the surface processing step for processing the surface of the substrate and the surface processing step are performed. A film forming step for forming a film for covering the residue attached by the surface treatment on the edge of the back surface of the substrate, and a substrate for accommodating the substrate on which the film has been formed in the film forming step in a transport container And decided to have a containment step.

  Further, in the present invention, in a computer-readable storage medium storing a substrate processing program for processing a substrate using a substrate processing apparatus, residues adhered to the edge of the back surface after the surface processing are processed by the surface processing. A substrate removing step for taking out the substrate on which the coating film to be covered is taken out from a transfer container, and a film removing step for removing the residue together with the coating film from the substrate taken out in the substrate removing step. .

  In the present invention, it is possible to prevent the residue attached to the substrate during transfer of the substrate from being transferred to another substrate.

Explanatory drawing which shows a substrate processing system. The top view which shows a 1st substrate processing apparatus. The side view which shows a surface treatment part. The side view which shows a film formation part. The top view which shows the 2nd substrate processing apparatus. The side view which shows a film removal part. The side view which shows a board | substrate process part. The partial enlarged front view which shows a conveyance container. The bottom explanatory view showing the formation range of a film. The flowchart which shows a substrate processing method. Cross-sectional explanatory drawing which shows a film.

  Hereinafter, specific configurations of a substrate processing system, a substrate processing apparatus, a substrate processing method, and a substrate processing program according to the present invention will be described with reference to the drawings.

  As shown in FIG. 1, a substrate processing system 1 includes a first substrate processing apparatus 2 and a second substrate processing apparatus 3 in which a wafer (substrate) W to be processed is accommodated in a carrier (transfer container) C and transferred. Have The first substrate processing apparatus 2 forms a film on the edge of the wafer W after processing (preprocessing) the wafer W before being transported by the carrier C. The second substrate processing apparatus 3 performs processing (post-processing) on the wafer W after removing the film from the edge of the wafer W after being transported by the carrier C. The first and second substrate processing apparatuses 2 and 3 are respectively provided with control apparatuses 4 and 5. The control devices 4 and 5 are, for example, computers, and include control units 6 and 7 and storage units 8 and 9. The storage units 8 and 9 store programs for controlling various processes executed in the substrate processing system 1. The control units 6 and 7 control the operation of the substrate processing system 1 by reading out and executing the programs stored in the storage units 8 and 9. The program may be stored in a computer-readable storage medium and may be installed in the storage units 8 and 9 of the control devices 4 and 5 from the storage medium. Examples of the computer-readable storage medium include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

  The substrate processing system 1 may include another substrate processing apparatus that processes the wafer W. Further, the carrier C may be carried automatically by providing a carrying device, or manually by an operator. Further, the control devices 4 and 5 and the programs stored in the control devices 4 and 5 are not limited to the case where they are individually provided in the first and second substrate processing devices 2 and 3, respectively, and control the substrate processing system 1 as a whole. An integrated device or program may be provided.

  As shown in FIG. 2, the first substrate processing apparatus 2 includes a carry-in / out station 10 and a processing station 11. The carry-in / out station 10 and the processing station 11 are provided adjacent to each other.

  The carry-in / out station 10 includes a carrier placement unit 12 and a conveyance unit 13. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 12.

  The transport unit 13 is provided adjacent to the carrier placement unit 12 and includes a substrate transport device 14 therein. The substrate transfer device 14 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 14 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the processing station 11 using the wafer holding mechanism. Do.

  The processing station 11 is provided adjacent to the transfer unit 13. The processing station 11 includes a surface processing unit 15 and a film forming unit 16. The surface treatment unit 15 and the film forming unit 16 are provided side by side adjacent to the transport unit 13. The surface processing unit 15 performs an etching process on the wafer W. In the film forming unit 16, a process for forming a film is performed on the wafer W etched by the surface processing unit 15.

  As shown in FIG. 3, the surface processing unit 15 includes a chamber 17, a substrate holding mechanism 18, and a processing fluid supply mechanism 19.

  The chamber 17 accommodates a substrate holding mechanism 18 and a processing fluid supply mechanism 19. An exhaust device 20 is connected to the chamber 17. The inside of the chamber 17 is depressurized by the exhaust device 20.

  The substrate holding mechanism 18 includes a mounting table 21 at the bottom of the chamber 17. On the mounting table 21, the back surface of the wafer W is mounted with the front surface (upper surface: circuit forming surface) of the wafer W facing upward.

  The processing fluid supply mechanism 19 includes a shower head 22 at the ceiling of the chamber 17. A processing fluid supply source 23 is connected to the shower head 22 via a flow rate regulator 24.

  Then, in the surface processing unit 15, the inside of the chamber 17 is decompressed by the exhaust device 20, and the etching gas supplied from the processing fluid supply source 23 is blown toward the surface of the wafer W mounted on the mounting table 21. Then, the surface of the wafer W is etched.

  As shown in FIG. 4, the film forming unit 16 includes a chamber 25, a substrate holding mechanism 26, a processing fluid supply mechanism 27, and a processing fluid recovery mechanism 28.

  The chamber 25 accommodates a substrate holding mechanism 26, a processing fluid supply mechanism 27, and a processing fluid recovery mechanism 28. An FFU (Fan Filter Unit) 29 is provided on the ceiling of the chamber 25. The FFU 29 forms a down flow inside the chamber 25.

  The substrate holding mechanism 26 includes a rotation shaft 30 at the bottom of the chamber 25. A suction chuck 31 is provided at the upper end of the rotating shaft 30. The suction chuck 31 holds the wafer W horizontally by sucking the back surface of the wafer W by suction. A rotation drive mechanism 32 is connected to the rotation shaft 30. The substrate holding mechanism 26 rotates the wafer W horizontally by rotating the rotating shaft 30 by the rotation driving mechanism 32 in a state where the wafer W is held by the suction chuck 31.

  The processing fluid supply mechanism 27 includes an upper nozzle 33 on the upper side of the wafer W held by the substrate holding mechanism 26. A processing fluid supply source 34 is connected to the upper nozzle 33 via a flow rate regulator 35. A nozzle moving mechanism 36 is connected to the upper nozzle 33. The nozzle moving mechanism 36 moves the upper nozzle 33 horizontally between a processing position above the center of the wafer W and a retracted position outside the outer periphery of the wafer W. The processing fluid supply mechanism 27 directs the processing fluid (film forming solution for forming a film on the wafer W) supplied from the processing fluid supply source 34 from the upper nozzle 33 toward the surface of the wafer W (upper surface: circuit forming surface). Then, a film is formed on the surface of the wafer W. At that time, it is possible to move the upper nozzle 33 while discharging the processing fluid from the upper center of the wafer W to the outer peripheral side by using the nozzle moving mechanism 36.

  Further, the processing fluid supply mechanism 27 includes a lower nozzle 37 on the lower side of the wafer W held by the substrate holding mechanism 26. A processing fluid supply source 38 is connected to the lower nozzle 37 via a flow rate regulator 39. The processing fluid supply mechanism 27 discharges the processing fluid (film forming liquid for forming a film on the wafer W) supplied from the processing fluid supply source 38 from the lower nozzle 37 toward the edge of the wafer W. Then, a film is formed on the edge of the wafer W.

  The processing fluid recovery mechanism 28 includes a recovery cup 40 on the outer periphery of the wafer W held by the substrate holding mechanism 26. The collection cup 40 collects the processing fluid that is scattered from the wafer W to the outer periphery by the rotation of the wafer W. A drain port 41 is formed at the bottom of the recovery cup 40. The processing fluid collected by the recovery cup 40 is discharged to the outside from the drain port 41. Further, an exhaust port 42 is formed at the bottom of the recovery cup 40. The gas (down flow) supplied from the FFU 29 is discharged from the exhaust port 42 to the outside.

  Then, the film forming unit 16 discharges the film forming liquid supplied from the processing fluid supply mechanism 27 to the surface or / and the edge of the wafer W rotated by the substrate holding mechanism 26, and the surface of the wafer W or / and A film is formed on the edge.

  In the first substrate processing apparatus 2 configured as described above, first, in the loading / unloading station 10, the substrate transfer device 14 of the transfer unit 13 takes out the wafer W from the carrier C mounted on the carrier mounting unit 12. The extracted wafer W is carried into the surface processing unit 15 of the processing station 11 by the substrate transfer device 14. The wafer W carried into the surface processing unit 15 is etched by the surface processing unit 15. Thereafter, the wafer W is transferred to the film forming unit 16, and a film is formed on the wafer W by the film forming unit 16. Thereafter, the wafer W is unloaded from the film forming unit 16 by the substrate transfer device 14 and accommodated in the carrier C mounted on the carrier mounting unit 12. Therefore, the transfer unit 13 of the loading / unloading station 10 functions as a substrate storage unit for storing the wafer W in the carrier C.

  As shown in FIG. 5, the second substrate processing apparatus 3 includes a carry-in / out station 43 and a processing station 44. The carry-in / out station 43 and the processing station 44 are provided adjacent to each other.

  The carry-in / out station 43 includes a carrier placement unit 45 and a transport unit 46. A plurality of carriers C that accommodate a plurality of wafers W in a horizontal state are placed on the carrier placement unit 45.

  The transfer unit 46 is provided adjacent to the carrier placement unit 45 and includes a substrate transfer device 47 and a delivery unit 48 inside. The substrate transfer apparatus 47 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 47 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and transfers the wafer W between the carrier C and the delivery unit 48 using the wafer holding mechanism. Do.

  The processing station 44 is provided adjacent to the transfer unit 46. The processing station 44 includes a transport unit 49, a film removal unit 50, and a substrate processing unit 51. The film removing unit 50 and the substrate processing unit 51 are provided side by side on both sides of the transport unit 49.

  The transport unit 49 includes a substrate transport device 52 inside. The substrate transfer device 52 includes a wafer holding mechanism that holds the wafer W. Further, the substrate transfer device 52 can move in the horizontal direction and the vertical direction and can turn around the vertical axis, and the wafer holding mechanism can be used to connect the delivery unit 48 and the film removal unit 50 or the substrate processing unit 51. The wafer W is transferred between the coating film removal unit 50 and the substrate processing unit 51.

  As shown in FIG. 6, the film removing unit 50 includes a chamber 53, a substrate holding mechanism 54, a processing fluid supply mechanism 55, and a processing fluid recovery mechanism 56.

  The chamber 53 accommodates a substrate holding mechanism 54, a processing fluid supply mechanism 55, and a processing fluid recovery mechanism 56. An FFU (Fan Filter Unit) 57 is provided on the ceiling of the chamber 53. The FFU 57 forms a down flow inside the chamber 53.

  The substrate holding mechanism 54 includes a rotation shaft 58 at the bottom of the chamber 53. A suction chuck 59 is provided at the upper end of the rotating shaft 58. The suction chuck 59 sucks the back surface of the wafer W by suction and holds the wafer W horizontally. A rotation drive mechanism 60 is connected to the rotation shaft 58. The substrate holding mechanism 54 rotates the wafer W horizontally by rotating the rotating shaft 58 by the rotation driving mechanism 60 in a state where the wafer W is held by the suction chuck 59.

  The processing fluid supply mechanism 55 includes an upper nozzle 61 on the upper side of the wafer W held by the substrate holding mechanism 54. A processing fluid supply source 62 is connected to the upper nozzle 61 via a flow rate regulator 63. A nozzle moving mechanism 64 is connected to the upper nozzle 61. The nozzle moving mechanism 64 moves the upper nozzle 61 horizontally between a processing position above the center of the wafer W and a retracted position outside the outer periphery of the wafer W. The processing fluid supply mechanism 55 directs the processing fluid supplied from the processing fluid supply source 62 (film removal liquid for removing the film from the wafer W) from the upper nozzle 61 to the surface of the wafer W (upper surface: circuit formation surface). Then, the coating is removed from the surface of the wafer W. At that time, it is also possible to move the upper nozzle 61 while discharging the processing fluid from the upper center of the wafer W to the outer peripheral portion side using the nozzle moving mechanism 64.

  Further, the processing fluid supply mechanism 55 includes a lower nozzle 65 on the lower side of the wafer W held by the substrate holding mechanism 54. A processing fluid supply source 66 is connected to the lower nozzle 65 via a flow rate regulator 67. The processing fluid supply mechanism 55 discharges the processing fluid supplied from the processing fluid supply source 66 (film removal liquid for removing the film from the wafer W) from the lower nozzle 65 toward the edge of the wafer W. Then, the film is removed from the edge of the wafer W.

  The processing fluid recovery mechanism 56 includes a recovery cup 68 on the outer periphery of the wafer W held by the substrate holding mechanism 54. The collection cup 68 collects the processing fluid that is scattered from the wafer W to the outer periphery by the rotation of the wafer W. A drain port 69 is formed at the bottom of the recovery cup 68. The processing fluid collected by the collection cup 68 is discharged from the drain port 69 to the outside. An exhaust port 70 is formed at the bottom of the recovery cup 68. The gas (down flow) supplied from the FFU 57 is exhausted from the exhaust port 70 to the outside.

  Then, the film removal unit 50 discharges the film removal liquid supplied from the processing fluid supply mechanism 55 to the surface or / and the edge of the wafer W rotated by the substrate holding mechanism 54, and the surface of the wafer W or / and Remove the coating from the edge.

  As shown in FIG. 7, the substrate processing unit 51 includes a chamber 71, a substrate holding mechanism 72, a processing fluid supply mechanism 73, and a processing fluid recovery mechanism 74.

  The chamber 71 accommodates a substrate holding mechanism 72, a processing fluid supply mechanism 73, and a processing fluid recovery mechanism 74. An FFU (Fan Filter Unit) 75 is provided on the ceiling of the chamber 71. The FFU 75 forms a down flow inside the chamber 71.

  The substrate holding mechanism 72 includes a rotation shaft 76 at the bottom of the chamber 71. A disc-shaped turntable 77 is provided at the upper end of the rotating shaft 76. A substrate holder 78 is provided on the outer peripheral edge upper portion of the turntable 77 at intervals in the circumferential direction. The substrate holder 78 holds the wafer W horizontally by placing the edge portion of the wafer W on the top. A rotation drive mechanism 79 is connected to the rotation shaft 76. The substrate holding mechanism 72 rotates the wafer W horizontally by rotating the rotating shaft 76 by the rotation driving mechanism 79 while holding the wafer W by the substrate holding body 78.

  The processing fluid supply mechanism 73 includes a nozzle 80 on the upper side of the wafer W held by the substrate holding mechanism 72. A processing fluid supply source 81 is connected to the nozzle 80 via a flow rate regulator 82. A nozzle moving mechanism 83 is connected to the nozzle 80. The nozzle moving mechanism 83 moves the nozzle 80 horizontally between a processing position above the center of the wafer W and a retracted position outside the outer periphery of the wafer W. The processing fluid supply mechanism 73 cleans the surface of the wafer W by discharging the processing fluid (cleaning liquid) supplied from the processing fluid supply source 81 from the nozzle 80 toward the surface (upper surface: circuit formation surface) of the wafer W. . At this time, the nozzle 80 can be moved using the nozzle moving mechanism 83 while discharging the processing fluid from the upper center of the wafer W to the outer peripheral side.

  The processing fluid recovery mechanism 74 includes a recovery cup 84 outside the outer periphery of the wafer W held by the substrate holding mechanism 72. The recovery cup 84 collects the processing fluid that scatters outward from the wafer W due to the rotation of the wafer W. A drain port 85 is formed at the bottom of the recovery cup 84. The processing fluid collected by the recovery cup 84 is discharged from the drain port 85 to the outside. An exhaust port 86 is formed at the bottom of the recovery cup 84. The gas (down flow) supplied from the FFU 75 is discharged from the exhaust port 86 to the outside.

  The substrate processing unit 51 cleans the surface of the wafer W by discharging the cleaning liquid supplied from the processing fluid supply mechanism 73 onto the surface of the wafer W rotated by the substrate holding mechanism 72.

  In the second substrate processing apparatus 3 configured as described above, first, the substrate transfer device 47 of the transfer unit 46 takes out the wafer W from the carrier C mounted on the carrier mounting unit 45 at the loading / unloading station 43. Therefore, the transfer unit 46 of the carry-in / out station 43 functions as a substrate take-out unit that takes out the wafer W from the carrier C. The extracted wafer W is transferred to the delivery unit 48 by the substrate transfer device 47. Thereafter, the wafer W is carried into the film removing unit 50 from the delivery unit 48 by the substrate transfer device 52 of the processing station 44, and the film is removed from the wafer W by the film removing unit 50. Thereafter, the wafer W is carried into the substrate processing unit 51 from the film removing unit 50 by the substrate transfer device 52 and processed by the substrate processing unit 51. Thereafter, the wafer W is unloaded from the substrate processing unit 51 to the delivery unit 48 of the loading / unloading station 43 by the substrate transfer device 52. Thereafter, the wafer W is accommodated in the carrier C mounted on the carrier mounting unit 45 from the delivery unit 48 by the substrate transfer device 47.

  The substrate processing system 1 is configured as described above, the wafer W processed by the first substrate processing apparatus 2 is accommodated in the carrier C, the carrier C is transferred to the second substrate processing apparatus 3, The wafer W is processed by the second substrate processing apparatus 3.

  As shown in FIGS. 8 and 9, the carrier C has an opening in the front, and support pieces 90 are horizontally provided on the left and right and rear side walls 87, 88, 89 at predetermined intervals. The carrier C holds the wafer W horizontally by placing the edge of the wafer W on the support piece 90. Therefore, when the carrier C is transported, the edge of the wafer W and the support piece 90 are rubbed inside the carrier C. If contaminants such as residues are attached to the edge of the wafer W processed by the first substrate processing apparatus 2, the wafer W is being transferred from the first substrate processing apparatus 2 to the second substrate processing apparatus 3. By rubbing the edge portion of the wafer W and the support piece 90, contaminants attached to the edge portion of the wafer W are transferred to the surface of another wafer W, and the second substrate processing apparatus 3 Processing cannot be performed satisfactorily. Therefore, in the substrate processing system 1, the wafer W is accommodated and transported in the carrier C in a state where the edge portion of the wafer W is covered with the coating.

  Below, the processing method of the wafer W in the said substrate processing system 1 is demonstrated (refer FIG. 10). The substrate processing method in the substrate processing system 1 described below is performed in accordance with the substrate processing program stored in the storage units 8 and 9 of the control devices 4 and 5 (the first substrate processing apparatus 2 and the first substrate processing apparatus 2). This is performed by controlling the second substrate processing apparatus 3).

  First, in the first substrate processing apparatus 2, after the substrate transfer device 14 of the transfer unit 13 takes out the wafer W from the carrier C mounted on the carrier mounting unit 12 in the loading / unloading station 10, the surface of the processing station 11 is processed. It carries in to the process part 15 (board | substrate extraction process: board | substrate extraction step S1).

  Next, the first substrate processing apparatus 2 etches the surface of the wafer W by the surface processing unit 15 (surface processing step: surface processing step S2).

  Next, the first substrate processing apparatus 2 transfers the wafer W from the surface processing unit 15 to the film forming unit 16 (substrate transfer process: substrate transfer step S3).

  Next, the first substrate processing apparatus 2 forms a film on the wafer W by the film forming unit 16 (film forming process: film forming step S4).

  In this film forming process, the film forming liquid is discharged from the upper nozzle 33 to the center of the surface of the rotating wafer W, and the film forming liquid is discharged from the lower nozzle 37 to the edge portion of the wafer W. A film is formed on the surface and the edge. Note that the film forming liquid may be simultaneously discharged from the upper nozzle 33 and the lower nozzle 37 to form a film on the surface and the edge of the wafer W. Alternatively, the film may be formed first from either the surface or the edge of the wafer W by discharging the film forming liquid onto the wafer W from either one.

  As shown in FIG. 11, the coating 91 includes a region 92 where a circuit pattern is formed on the surface of the wafer W, a flat region 93 on the outer peripheral side, and an inclined region 94 near the outer peripheral edge of the wafer W. Formed. Further, the coating 91 is formed in a vertical circumferential surface region 95 at the outer peripheral edge of the wafer W. Further, the coating 91 is formed on the inclined surface 96 near the outer peripheral edge of the wafer W and the flat outer peripheral edge region 97 on the inner peripheral side of the wafer W on the back surface of the wafer W. On the back surface of the wafer W, a portion where the back surface of the wafer W is held inside the carrier C (a region 98 where the outer peripheral edge of the back surface of the wafer W and the support piece 90 of the carrier C are in direct contact as shown in FIG. ) In a wider range (as shown in FIG. 9, a film 91 on the outer peripheral portion 99 on the back surface of the wafer W). The coating 91 is desirably formed at least on the edge of the back surface of the wafer W (regions indicated by regions 96 and 97), and may be formed on the surface of the wafer W (regions indicated by regions 92 and 93).

  By forming the coating 91 on the wafer W in this way, as shown in FIG. 11, contaminants 100 such as residues adhere to the wafer W after being processed by the surface processing unit 15 of the first substrate processing apparatus 2. However, since the contaminant 100 is covered with the coating 91, it is possible to prevent the contaminant 100 from being transferred to another wafer W when the wafer W is transferred.

  The coating 91 may be a thin film that covers the wafer W and does not adversely affect the wafer W, and may be an organic film, an oxide film, SOG (Spin On Glass), or the like. Further, the method of forming the coating 91 is not limited to the method of applying the coating forming liquid to the wafer W, and may be a method using plasma CVD or the like. For example, the coating 91 can be formed by using an acrylic resin containing a volatile component as a film forming liquid and volatilizing and curing the volatile component after application to the wafer W. In this case, volume shrinkage occurs due to volatilization of volatile components during the formation of the coating 91, and accordingly, the contaminant 100 can be peeled off from the wafer W and the contaminant 100 can be taken into the coating 91.

  Next, the first substrate processing apparatus 2 unloads the wafer W on which the film 91 has been formed by the film forming unit 16 from the film forming unit 16 by the substrate transfer device 14, and then transfers the wafer W to the carrier mounting unit 12 of the loading / unloading station 10. It accommodates in the mounted carrier C (substrate accommodation step: substrate accommodation step S5).

  The wafer W accommodated in the carrier C is transferred from the first substrate processing apparatus 2 to the second substrate processing apparatus 3 together with the carrier C (substrate transfer step: substrate transfer step S6).

  Thereafter, the second substrate processing apparatus 3 transfers the wafer W to the delivery unit 48 after the substrate transfer device 47 of the transfer unit 46 takes out the wafer W from the carrier C mounted on the carrier mounting unit 45 at the loading / unloading station 43. (Substrate extraction step: Substrate extraction step S7).

  Next, the second substrate processing apparatus 3 loads the wafer W from the transfer section 48 to the film removal section 50 by the substrate transfer apparatus 52 of the processing station 44 (substrate loading process: substrate loading step S8).

  Next, the second substrate processing apparatus 3 removes the film from the wafer W by the film removal unit 50 (film removal process: film removal step S9).

  In this film removal step, first, a film removal solution is discharged from the lower nozzle 65 to the edge of the rotating wafer W to remove the film on the edge of the wafer W, and then the wafer W is discharged from the upper nozzle 61. A film removal liquid is discharged to the center of the surface of the wafer W to remove the film on the surface of the wafer W. Alternatively, the film removal liquid may be simultaneously discharged from the upper nozzle 61 and the lower nozzle 65 to the wafer W to remove the film from the surface and the edge of the wafer W at the same time. When the coating on the edge of the wafer W is removed before the coating on the surface, contaminants generated when the coating on the edge of the wafer W is removed adhere to the surface of the wafer W. However, the contaminant can be removed when the coating is removed from the surface of the wafer W.

  In the film removal process, it is only necessary that the film formed in the film formation process can be removed from the wafer W. The method of removing the coating is not limited to the method of applying the coating removal liquid to the wafer W, and may be a method of heating the wafer W to sublimate the coating or a method of removing by ashing. For example, an alkaline aqueous solution such as a developer, an organic solvent such as thinner / IPA (isopropyl alcohol), or an acidic aqueous solution can be used as the film removing solution. In the case where the film is removed by peeling the film from the wafer W, the contaminants attached to the wafer W when the film is peeled from the wafer W can be peeled off from the wafer W together.

  Next, the second substrate processing apparatus 3 transfers the wafer W from the film removing unit 50 to the substrate processing unit 51 by the substrate transfer device 52 (substrate transfer step: substrate transfer step S10).

  Next, the second substrate processing apparatus 3 cleans the wafer W by the substrate processing unit 51 (substrate processing step: substrate processing step S11).

  Next, the second substrate processing apparatus 3 unloads the wafer W from the substrate processing unit 51 by the substrate transfer device 52 and transfers it to the delivery unit 48 of the loading / unloading station 43 (substrate unloading process: substrate unloading step S12).

  Next, the second substrate processing apparatus 3 stores the wafer W in the carrier C mounted on the carrier mounting unit 45 from the delivery unit 48 by the substrate transfer device 47 (substrate storing step: substrate storing step S13).

  The wafer W accommodated in the carrier C is transferred together with the carrier C from the second substrate processing apparatus 3 to another apparatus or the like.

  As described above, in the substrate processing method in the substrate processing system 1 (the first substrate processing apparatus 2 and the second substrate processing apparatus 3), a film is formed on the edge portion of the wafer W whose surface has been processed. Thereafter, the film is accommodated in the carrier C, and then the film of the wafer W is removed. Therefore, contaminants such as residues generated when the surface of the wafer W is processed can be prevented from being transferred to another wafer W inside the carrier C during the transfer of the wafer W, and the subsequent processing of the wafer W can be performed. This can be carried out satisfactorily and the product yield can be improved.

  In the substrate processing system 1, the first substrate processing apparatus 2 performs the etching process on the surface of the wafer W. However, the present invention is not limited to this, and other processes may be performed on the surface of the wafer W. . In the substrate processing system 1, the cleaning process is performed on the wafer W by the second substrate processing apparatus 3. However, the present invention is not limited to this, and other processes on the wafer W may be performed.

W Wafer (Substrate)
C carrier (conveying container)
DESCRIPTION OF SYMBOLS 1 Substrate processing system 2 1st substrate processing apparatus 3 2nd substrate processing apparatus
13 Transport section (board housing section)
15 Surface treatment section
16 Film formation part
46 Transport section (substrate extraction section)
50 Film removal part
51 Substrate processing section
91 coating

Claims (13)

A surface treatment process for treating the surface of the substrate;
A film forming step of forming a film for covering the residue adhering to the surface treatment on the edge of the back surface of the substrate after the surface treatment step;
A substrate accommodation step of accommodating the substrate after the coating formation step in a transfer container;
A substrate processing method comprising:   2. The substrate processing method according to claim 1, wherein in the coating film forming step, the coating film is formed in a range on an inner peripheral side of a portion where a back surface of the substrate is held inside the transfer container.   The substrate processing method according to claim 1, wherein the film forming step forms the film on the surface of the substrate. A substrate removal step of taking out a substrate on which a film for covering the residue adhering to the surface treatment on the edge of the back surface after processing the surface is formed from the transport container;
A film removing step of removing the residue together with the film from the substrate after the substrate removing step;
A substrate processing method comprising:   5. The substrate processing method according to claim 4, wherein, in the film removing step, the film is removed from the surface of the substrate after the film is removed from an edge portion of the substrate. A surface treatment unit for treating the surface of the substrate;
A film forming part for forming a film for covering the residue attached by the surface treatment on the edge of the back surface of the substrate treated by the surface treatment part;
A substrate housing portion for housing the substrate on which the coating film is formed in the coating film forming portion in a transport container;
A substrate take-out portion for taking out the substrate accommodated by the substrate accommodating portion from the transfer container;
A film removal unit that removes the residue together with the film from the substrate taken out by the substrate extraction unit;
A substrate processing system comprising: A surface treatment unit for treating the surface of the substrate;
A film forming part for forming a film for covering the residue attached by the surface treatment on the edge of the back surface of the substrate treated by the surface treatment part;
A substrate housing portion for housing the substrate on which the coating film is formed in the coating film forming portion in a transport container;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 7, wherein the film forming unit forms the film in a range on an inner peripheral side of a portion where a back surface of the substrate is held inside the transport container.   The substrate processing apparatus according to claim 7, wherein the film forming unit forms the film on the surface of the substrate. A substrate take-out part for taking out a substrate on which a film for covering the residue adhering to the surface treatment on the back edge after treating the surface is formed from the transport container;
A film removal unit that removes the residue together with the film from the substrate taken out by the substrate extraction unit;
A substrate processing apparatus comprising:   The substrate processing apparatus according to claim 10, wherein the coating removal unit removes the coating from the surface of the substrate after removing the coating from an edge portion of the substrate. In a computer-readable storage medium storing a substrate processing program for processing a substrate using a substrate processing apparatus,
A surface treatment step for treating the surface of the substrate;
A film forming step of forming a film for covering the residue adhered by the surface treatment on the edge of the back surface of the substrate treated in the surface treatment step;
A substrate accommodation step for accommodating the substrate on which the film has been formed in the film formation step in a transport container;
A computer-readable storage medium storing a substrate processing program. In a computer-readable storage medium storing a substrate processing program for processing a substrate using a substrate processing apparatus,
A substrate take-out step of taking out the substrate on which the film for covering the residue adhering to the surface treatment on the edge portion of the back surface after treating the surface is taken out from a transport container;
A film removing step for removing the residue together with the film from the substrate taken out in the substrate removing step;
A computer-readable storage medium storing a substrate processing program.

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