JP2017111311A - Exposure apparatus, exposure method and method for manufacturing article - Google Patents

Exposure apparatus, exposure method and method for manufacturing article Download PDF

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JP2017111311A
JP2017111311A JP2015245648A JP2015245648A JP2017111311A JP 2017111311 A JP2017111311 A JP 2017111311A JP 2015245648 A JP2015245648 A JP 2015245648A JP 2015245648 A JP2015245648 A JP 2015245648A JP 2017111311 A JP2017111311 A JP 2017111311A
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wavelength
changing
optical system
projection optical
phase shift
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JP2017111311A5 (en
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善之 永井
Yoshiyuki Nagai
善之 永井
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キヤノン株式会社
Canon Inc
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Abstract

PROBLEM TO BE SOLVED: To provide a technique advantageous in resolution performance and depth of focus upon exposing a substrate by use of a phase shift mask.SOLUTION: An exposure apparatus exposes a substrate by using a phase shift mask comprising a first region and a second region to give different phases of transmitted light from each other, and the apparatus includes: a first changing part for changing an illumination wavelength of light to illuminate the phase shift mask; a projection optical system for projecting a pattern image of the phase shift mask onto the substrate; a second changing part for changing a spherical aberration of the projection optical system; and a control part for controlling changes in the spherical aberration by the second changing part on the basis of a reference wavelength and the illumination wavelength after changed so as to correct changes in the depth of focus caused by the changes in the wavelength of the illumination wavelength different from the reference wavelength by the first changing part. The reference wavelength is a wavelength where a phase difference between the transmitted light in the first region and the transmitted light in the second region is 180 degrees.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an exposure apparatus, an exposure method, and a method for manufacturing an article.

  An exposure apparatus used for transferring a mask pattern to a substrate in a manufacturing process (lithography process) of a semiconductor device or the like is required to improve resolution performance as the circuit pattern is miniaturized and highly integrated. . As one method for improving the resolution performance, a phase shift method using a phase shift mask provided with a first region and a second region in which the phase of transmitted light is different by 180 degrees is known.

  In the phase shift method, if the phase difference between the transmitted light in the first region and the transmitted light in the second region deviates from 180 degrees due to a manufacturing error of the phase shift mask, the depth of focus can be changed. Patent Document 1 discloses a change in depth of focus caused by the phase difference deviating from 180 degrees based on the result of measuring the phase difference between the transmitted light in the first region and the transmitted light in the second region in the phase shift mask. A method for correcting the above has been proposed.

JP 10-232483 A

  In order to further improve the resolution performance in the exposure apparatus, it is preferable to shorten the wavelength of the illumination light that illuminates the phase shift mask (that is, the exposure wavelength). However, if the wavelength of the illumination light is shifted from the reference wavelength at which the phase difference between the transmitted light in the first region and the transmitted light in the second region is 180 degrees, the focus is changed according to the difference between the wavelength of the illumination light and the reference wavelength. Depth can vary. In the method described in Patent Document 1, since the depth of focus is corrected based on the measurement result of the phase difference between the transmitted light in the first region and the transmitted light in the second region, the wavelength of the illumination light is changed. The phase difference needs to be measured, and the process of correcting the depth of focus can be complicated.

  Accordingly, an object of the present invention is to provide a technique advantageous in terms of resolution performance and depth of focus when a substrate is exposed using a phase shift mask.

  In order to achieve the above object, an exposure apparatus according to one aspect of the present invention is an exposure apparatus that exposes a substrate using a phase shift mask including a first region and a second region that cause the phases of transmitted light to differ from each other. A first changing unit that changes an illumination wavelength of light that illuminates the phase shift mask, a projection optical system that projects a pattern image of the phase shift mask onto the substrate, and a spherical aberration of the projection optical system is changed. Based on the reference wavelength and the changed illumination wavelength so that a change in depth of focus caused by changing the illumination wavelength to a wavelength different from the reference wavelength is corrected by the second changing unit and the first changing unit. A control unit that controls the change of the spherical aberration by the second changing unit, and the reference wavelength is 180 degrees between the transmitted light of the first region and the transmitted light of the second region When It is the wavelength, and wherein the.

  Further objects and other aspects of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, for example, a technique advantageous in terms of resolution performance and depth of focus when a substrate is exposed using a phase shift mask can be provided.

It is the schematic which shows the structure of exposure apparatus. It is a figure which shows the result of having performed lithography simulation of the focus characteristic using the phase shift mask. It is a figure for demonstrating the definition of a focal depth. It is a figure which shows the result of having performed lithography simulation of the focus characteristic using the phase shift mask. It is a figure which shows the relationship between the drive amount of an optical element, and the spherical aberration which arises in a projection optical system. It is a flowchart which shows the method of acquiring change amount information. It is a figure which shows the focus characteristic about each of several conditions which changed the spherical aberration of the projection optical system. It is a figure which shows the focus characteristic about each of several conditions which changed the spherical aberration of the projection optical system. It is a figure which shows an example of change amount information.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member thru | or element, and the overlapping description is abbreviate | omitted.

<First Embodiment>
An exposure apparatus 100 according to the first embodiment of the present invention will be described. The exposure apparatus 100 of the first embodiment uses, for example, a single crystal silicon substrate or a phase shift mask M including a first region and a second region that make transmitted light different from each other in order to improve resolution performance (resolution). A substrate P such as a glass substrate is exposed. There are several types of phase shift masks M. Among them, halftone phase shift masks are highly convenient and are most commonly used in the field of semiconductor manufacturing. The halftone phase shift mask includes a first region that transmits light (transmission region) and a second region (partial transmission region) whose light transmittance is smaller than the first region, and the first region at a certain reference wavelength. Is designed so that the phase difference between the transmitted light and the transmitted light of the second region is 180 degrees. In the second region, a partially transmissive film having a light transmittance of 3% to 20%, for example, is provided instead of the light shielding film as a binary mask. Chromium, molybdenum oxynitride silicide, or the like is used. When the halftone phase shift mask configured as described above is used, the edge of the pattern image projected onto the substrate P is emphasized, so that the resolution performance can be improved.

  Next, the configuration of the exposure apparatus 100 of the first embodiment will be described with reference to FIG. FIG. 1 is a schematic diagram showing a configuration of an exposure apparatus 100 according to the first embodiment. The exposure apparatus 100 includes, for example, an illumination optical system 1 that illuminates the phase shift mask M, a projection optical system 2 that projects a pattern image of the phase shift mask M onto the substrate P, a control unit 3, and a console unit 4. sell. The control unit 3 includes, for example, a CPU and a memory, and controls each unit of the exposure apparatus 100 (controls an exposure process for exposing the substrate P). The console 40 is a unit for the operator to operate the exposure apparatus 100. The exposure apparatus 100 can also include a mask stage 5 that can move while holding the phase shift mask M, and a substrate stage 6 that can move while holding the substrate P.

  The illumination optical system 1 can include, for example, a light source 11, a wavelength filter 12, an ND filter 13, an optical integrator 14, a condenser lens 15, a beam splitter 16a, a detector 16b, a masking blade 17, a lens 18, and a mirror 19. As the light source 11, for example, an ultra-high pressure mercury lamp that emits broad light (centroid wavelength: 400 nm) including a plurality of bright line spectra such as g-line, h-line, and i-line can be used. The wavelength filter 12 is configured to transmit light having a wavelength within a predetermined range and block light having a wavelength outside the range, that is, to narrow the wavelength band of the broad light emitted from the light source 11. . The illumination optical system 1 can be provided with a plurality of wavelength filters 12 having different wavelength ranges of transmitted light. And the wavelength of the light which illuminates the phase shift mask M can be changed by arrange | positioning one of the several wavelength filters 12 on an optical path. That is, the wavelength filter 12 has a function as a first changing unit that changes the illumination wavelength. Here, in the first embodiment, the wavelength filter 12 is used as the first changing unit. However, for example, the light source 11 configured to be able to change the wavelength of the emitted light may be used as the first changing unit. Hereinafter, the wavelength of light that illuminates the phase shift mask M is referred to as “illumination wavelength”.

  The ND filter 13 is used to adjust the intensity of light transmitted through the wavelength filter 12. The optical integrator 14 is an optical system for making the intensity distribution of the light illuminated on the phase shift mask M uniform. The light transmitted through the optical integrator 14 is collected by the condenser lens 15 and enters the beam splitter 16a. A part of the light incident on the beam splitter 16a is reflected by the beam splitter 16a and enters the detector 16b. The detector 16b is configured to detect the intensity and wavelength of incident light. Thereby, the control part 3 can control the light source 11 and the wavelength filter 12 so that the intensity | strength and wavelength of the light which permeate | transmitted the condenser lens 15 may become a desired value based on the detection result by the detector 16b. . On the other hand, the light transmitted through the beam splitter 16 a enters the phase shift mask M via the masking blade 17, the lens 18 and the mirror 19. The masking blade 17 has an opening for defining a range in which the phase shift mask M is illuminated, and an image of the opening is formed on the phase shift mask M by the lens 18.

  The projection optical system 2 can include, for example, a correction optical element 21, a trapezoidal mirror 22, a concave mirror 23, an optical element 24, a convex mirror 25, and an NA stop 26. The light that has passed through the phase shift mask M enters the correction optical element 21. The correction optical element 21 includes, for example, a parallel plate, and can correct coma, astigmatism, and distortion by tilting the parallel plate with respect to the optical axis. The light transmitted through the correction optical element 21 is reflected by the surface 22 a of the trapezoidal mirror 22 and the surface 23 a of the concave mirror 23 and enters the convex mirror 25. Then, the light reflected by the convex mirror 25 is reflected by the surface 23 b of the concave mirror 23 and the surface 22 b of the trapezoidal mirror 22 and enters the substrate P. Further, an NA stop 26 for changing the numerical aperture (NA) of the projection optical system 2 is disposed between the concave mirror 23 and the convex mirror 25 (for example, between an optical element 24 and a convex mirror 25 described later). . The NA stop 26 has an aperture through which light passes, and the numerical aperture (NA) of the projection optical system 2 can be changed by changing the diameter of the aperture with a drive mechanism (not shown).

  As described above, in the exposure apparatus 100 that exposes the substrate P using the phase shift mask M, it is required to further improve the resolution performance with the recent miniaturization and high integration of circuit patterns. As one of the methods for further improving the resolution performance, there is a method of changing (shortening) the illumination wavelength by, for example, narrowing the wavelength band of broad light. However, if the illumination wavelength is changed, the illumination wavelength deviates from the reference wavelength at which the phase difference between the transmitted light in the first region and the transmitted light in the second region is 180 degrees. As a result, the focus characteristic is inclined and the depth of focus can be lowered. This phenomenon will be described with reference to FIG.

  FIG. 2 is a diagram showing a result of performing lithography simulation of focus characteristics using a phase shift mask M in which a 2.0 μm hole pattern is formed. The graph shown in FIG. 2 shows the focus characteristics, the horizontal axis is the defocus amount, and the vertical axis is the CD value (resolution line width) as the resolution performance. A solid line 31 in FIG. 2 is a broad light (center of gravity wavelength: 400 nm) including a plurality of emission line spectra such as a g-line, an h-line, and an i-line, where the reference wavelength of the phase shift mask M is an h-line wavelength (405 nm). The result when the phase shift mask M is illuminated is shown. A broken line 32 in FIG. 2 shows a result when the phase shift mask M is illuminated with the i-line (365 nm) with the reference wavelength of the phase shift mask M as the h-line wavelength. 2 indicates a result when the reference wavelength of the phase shift mask M is the i-line wavelength and the phase shift mask M is illuminated with the i-line.

  First, the definition of the depth of focus in the present embodiment will be described with reference to FIG. In this embodiment, the peak value (maximum value or minimum value) of the CD value in the focus characteristic is determined, the first value obtained by adding 10% of the target CD value to the peak value, and the target CD value of the peak value. The second value obtained by subtracting 10% is obtained. The defocus amount range in which the CD value of the focus characteristic falls between the first value and the second value is defined as the depth of focus.

  Next, referring to the solid line 31 and the broken line 32 in FIG. 2, when the phase shift mask M whose reference wavelength is the h-line wavelength (405 nm) is illuminated with light having an illumination wavelength of 400 nm, and with an illumination wavelength of 365 nm The case of illuminating with light (i-line) is compared. Comparing the solid line 31 and the broken line 32, the solid line 31 in which the reference wavelength and the illumination wavelength are substantially the same has a depth of focus of 41 μm, whereas the broken line 32 in which the illumination wavelength is the i line has a sharp focus characteristic. It can be seen that the depth of focus is as narrow as 32 μm. This indicates that when the illumination wavelength is changed in order to improve the resolution performance, the depth of focus decreases according to the deviation between the illumination wavelength and the reference wavelength.

  On the other hand, as indicated by the one-dot chain line 33 in FIG. 2, the phase shift mask M whose reference wavelength is the i-line wavelength is used in conjunction with the illumination of the phase shift mask M with light (i-line) having an illumination wavelength of 365 nm. And the depth of focus can be improved to 36 μm. However, this indicates that it is necessary to newly prepare a phase shift mask M having the changed illumination wavelength as a reference wavelength. That is, in order to improve the resolution performance by changing the illumination wavelength in the conventional exposure apparatus by, for example, 30 nm or more, it is necessary to newly manufacture the phase shift mask M according to the changed illumination wavelength.

  Therefore, the exposure apparatus 100 according to the first embodiment uses the fact that the depth of focus changes when the spherical aberration of the projection optical system 2 is changed, and the depth of focus generated by changing the illumination wavelength to a wavelength different from the reference wavelength. Compensate for changes. That is, the exposure apparatus 100 includes a second changing unit that changes the spherical aberration of the projection optical system 2 so that the change in the depth of focus caused by changing the illumination wavelength to a wavelength different from the reference wavelength is corrected. The second changing unit is controlled based on the reference wavelength and the changed illumination wavelength. The second changing unit may include an optical element 24 disposed on the optical path of the projection optical system 2 (for example, on the optical path between the concave mirror 23 and the convex mirror 25), and a driving unit 27 that drives the optical element 24. The optical element 24 includes, for example, a meniscus lens, and between the concave mirror 23 and the convex mirror 25, the drive unit 27 in a direction in which the ratio of the distance from the concave mirror 23 to the distance from the convex mirror 25 changes (X direction in FIG. 1). Driven by. By driving the optical element 24 in this way, the spherical aberration of the projection optical system 2 can be changed.

  FIG. 4 is a diagram showing a result of performing lithography simulation of focus characteristics using a phase shift mask M in which a 2.0 μm hole pattern is formed. The graph shown in FIG. 4 shows the focus characteristics, the horizontal axis is the defocus amount, and the vertical axis is the CD value (resolution line width) as the resolution performance. A solid line 41 in FIG. 4 sets the reference wavelength of the phase shift mask M as the h-line wavelength (405 nm), and the phase shift with broad light (centroid wavelength 400 nm) including a plurality of bright line spectra such as g-line, h-line, and i-line. The result when the mask M is illuminated is shown. The broken line 42 in FIG. 4 shows the result when the reference wavelength of the phase shift mask M is the h-line wavelength and the phase shift mask M is illuminated with i-line (365 nm). The solid line 41 and the broken line 42 in FIG. 4 correspond to the solid line 31 and the broken line 32 in FIG. 2, respectively, and have a depth of focus of 41 μm and 32 μm, respectively.

  Also, a two-dot chain line 43 in FIG. 4 shows the result when the spherical aberration of the projection optical system 2 is changed with respect to the condition of the broken line 42. Specifically, an alternate long and two short dashes line 43 in FIG. 4 indicates that an optical element is added by the drive unit 27 so that a spherical aberration of + 0.1λ is further added to the spherical aberration of the projection optical system 2 when the broken line 42 is obtained. The result when 24 is driven is shown. In this way, by changing the spherical aberration of the projection optical system 2, even if the reference wavelength and the illumination wavelength are different from each other, the focus is on the solid line 41 where the reference wavelength and the illumination wavelength are substantially the same. The characteristics can be brought closer. In other words, the depth of focus changed by changing the illumination wavelength can be corrected so as to approach the depth of focus when the reference wavelength and the illumination wavelength are substantially the same.

  Here, the exposure apparatus 100 (control unit 3) is based on information indicating the amount of change of the spherical aberration of the projection optical system 2 with respect to the wavelength difference between the reference wavelength and the changed illumination wavelength (hereinafter referred to as change amount information). The second change unit may be controlled. For example, the control unit 3 obtains in advance a relationship between the driving amount of the optical element 24 by the driving unit 27 and the spherical aberration that occurs in the projection optical system 2 at the driving amount. The relationship can be a proportional relationship, for example, as shown in FIG. FIG. 5 is a diagram showing the relationship between the driving amount of the optical element 24 and the spherical aberration generated in the projection optical system 2. On the horizontal axis in FIG. 5, the optical element 24 is moved from the reference position (driving amount = 0) to a concave mirror. The direction of driving toward 23 (the + X direction in FIG. 1) is the positive direction. Then, the control unit 3 obtains the drive amount of the optical element 24 for correcting the change in the depth of focus caused by changing the illumination wavelength based on the relationship and the change amount information, and the drive unit according to the obtained drive amount. 27 is controlled.

Hereinafter, a method for obtaining the change amount information will be described. The change amount information can be obtained, for example, by changing the illumination wavelength to each of a plurality of different wavelengths and acquiring the spherical aberration of the projection optical system that maximizes the depth of focus for each of the plurality of wavelengths. Specific steps of the method for obtaining the change amount information will be described with reference to FIG. FIG. 6 is a flowchart illustrating a method for acquiring change amount information. Each step of the flowchart shown in FIG. 6 can be executed by the control unit 3, but may be executed using a computer or the like outside the exposure apparatus 100. In the following, an example of obtaining change amount information using a phase shift mask M on which a 2.0 μm hole pattern is formed will be described, and definitions in the following description are shown in the following 1) and 2).
1) Let the spherical aberration of the projection optical system 2 when the optical element 24 is at the reference position be the reference spherical aberration (± 0 mλ).
2) The best focus position when the spherical aberration of the projection optical system 2 is the reference spherical aberration (± 0 mλ) is “defocus amount = 0 μm”.

  In S <b> 11, the control unit 3 moves the optical element 24 by the driving unit 27 to change the focus characteristic (defocus amount and resolution performance (CD value) for each of a plurality of conditions in which the spherical aberration of the projection optical system 2 is changed. ))). For example, the control unit 3 obtains the resolution performance (CD value) when the defocus amount is changed for each of a plurality of conditions in which the spherical aberration of the projection optical system 2 is changed, thereby focusing on each condition. The characteristics can be obtained as in FIGS.

  7 and 8 are diagrams illustrating the focus characteristics under each of the plurality of conditions. FIG. 7 shows the result of obtaining the focus characteristics for each condition by adjusting the exposure amount so that the CD value when the defocus amount is 0 μm becomes the target value (2.0 μm). FIG. 8 shows the result of adjusting the exposure amount so that the peak value of the CD value under each condition becomes the target value (2.0 μm) and acquiring the focus characteristics for each condition. Here, FIGS. 7 and 8 are exemplified as the focus characteristics under each of a plurality of conditions. However, in order to obtain the change amount information, the focus characteristics shown in any one of FIGS. 7 and 8 may be acquired. 7 and 8, the spherical aberration of the projection optical system 2 is changed at a pitch of 100 mλ within a range of ± 200 mλ with respect to the reference spherical aberration (± 0 mλ). However, the spherical aberration is not limited to this. The range and pitch to be changed may be arbitrarily changed.

  Here, in this embodiment, the CD value is used as the resolution performance. However, in addition to the CD value, a contrast value, a NILS value (Normalized Image Log-Slope), or the like may be used as the resolution performance. As a CD value acquisition method, for example, a detection unit (for example, an image sensor) that detects a pattern image of the phase shift mask M is provided in the substrate stage 6, and the CD value is obtained from the image obtained by the detection unit. An acquisition method may be used. Further, a method may be used in which the substrate P is actually exposed using the phase shift mask M, and thereby the CD value is obtained from the result of measuring the dimension of the pattern formed on the substrate P with an external device.

  In S12, the control unit 3 obtains the depth of focus for each of the plurality of conditions from the focus characteristics obtained in S11, and the condition (the amount of change in spherical aberration of the projection optical system 2) that maximizes the depth of focus from among the plurality of conditions. ) Is selected. Here, in the first embodiment, a condition that maximizes the depth of focus is selected from among a plurality of conditions, but the present invention is not limited to this. For example, the control unit 3 may select a condition having the focal depth closest to the focal depth when the illumination wavelength and the reference wavelength are the same and the defocus amount is 0 μm from among a plurality of conditions. Further, the control unit 3 may select a condition in which the inclination at the peak position of the focus characteristic is the flattest from among a plurality of conditions.

  In S13, the control unit 3 determines whether to change the illumination wavelength and repeat the steps S11 to S12. For example, the control unit 3 determines a plurality of wavelengths whose illumination wavelengths should be changed based on information regarding the range and pitch in which the illumination wavelength is changed. And the control part 3 judges that the said process is not repeated when the process of S11-S12 is performed with all the determined wavelengths, and repeats the said process when there exists the wavelength which has not performed the process of S11-S12. Judge. If it is determined that the steps S11 to S12 are repeated, the process proceeds to S14, and after changing the illumination wavelength in S14, the process proceeds to S11. On the other hand, if it is determined not to repeat the steps S11 to S12, the process proceeds to S15. In the case of proceeding to S15, the control unit 3 has acquired the change amount of the spherical aberration that maximizes the depth of focus for each of the determined plurality of wavelengths.

  In S15, the control unit 3 obtains the difference between each of the plurality of wavelengths determined in S14 and the reference wavelength of the phase shift mask M, and shows the relationship between the difference and the amount of change in spherical aberration that maximizes the depth of focus. And determined as change amount information. FIG. 9 is a diagram illustrating an example of the change amount information obtained in S15. As described above, the change amount information is information indicating the change amount of the spherical aberration of the projection optical system 2 with respect to the wavelength difference between the reference wavelength and the changed illumination wavelength. In the example illustrated in FIG. It can be defined as a value obtained by subtracting the reference wavelength from the changed illumination wavelength. By determining the change amount information in this way, the control unit 3 can change the projection optical based on the difference between the reference wavelength and the changed illumination wavelength and the change amount information shown in FIG. 9 when the illumination wavelength is changed. A change amount of the spherical aberration of the system 2 can be obtained. Then, the control unit 3 obtains the drive amount of the optical element 24 from the obtained change amount of the spherical aberration based on the relationship between the drive amount of the optical element 24 shown in FIG. 5 and the spherical aberration generated in the projection optical system 2. be able to.

  As described above, the exposure apparatus 100 according to the first embodiment is based on the reference wavelength and the changed illumination wavelength so that the change in the depth of focus caused by changing the illumination wavelength to a wavelength different from the reference wavelength is corrected. Thus, the spherical aberration of the projection optical system 2 is changed. Thereby, the exposure apparatus 100 can change the illumination wavelength so that the resolution performance of the exposure apparatus 100 is improved without newly preparing a phase shift mask.

  Here, in this embodiment, the spherical aberration of the projection optical system 2 is changed by moving the optical element 24, but the present invention is not limited to this. For example, a plurality of optical elements 24 having different amounts of change of the spherical aberration of the projection optical system 2 may be provided, and the spherical aberration of the projection optical system 2 may be changed by replacing the optical element 24. In this case, the second changing unit that changes the spherical aberration of the projection optical system 2 may include an exchange unit for exchanging the optical element 24. Further, as a method of changing the spherical aberration of the projection optical system 2, a method of arranging a transparent flat plate on the optical path in the projection optical system 2, a method of changing the distance between the phase shift mask M and the projection optical system 2, or the like. There is also. Further, in the present embodiment, an Offner type optical system has been described as an example of the projection optical system 2, but an optical system other than the Offner type can also be used as the projection optical system 2.

Second Embodiment
When the illumination wavelength is changed to a wavelength different from the reference wavelength in the exposure apparatus 100, the defocus amount can be changed in addition to the depth of focus, as shown in FIG. In addition, even after the second changing unit is controlled so that the change in the depth of focus caused by the change in the illumination wavelength is corrected, the defocus amount may not be within the allowable range. Therefore, the exposure apparatus 100 may include a third changing unit that changes the defocus amount, and may control the third changing unit so that the defocus amount after controlling the second changing unit is corrected. As the third changing unit, for example, at least one of the mask stage 5 and the substrate stage 6 can be used. When the mask stage 5 is used as the third changing unit, the defocus amount is obtained by moving the phase shift mask M by the mask stage 5 in a direction (for example, the Z direction) in which the distance between the phase shift mask M and the projection optical system 2 is changed. Can be changed. When the substrate stage 6 is used as the third changing unit, the defocus amount is changed by moving the substrate P by the substrate stage 6 in a direction (for example, the Z direction) in which the distance between the substrate P and the projection optical system 2 is changed. can do. Here, for example, when at least one of the mask stage 5 and the substrate stage 6 is used as the second changing unit, the optical element 24 and the driving unit 27 may be used as the third changing unit.

<Embodiment of Method for Manufacturing Article>
The method for manufacturing an article according to an embodiment of the present invention is suitable, for example, for manufacturing an article such as a microdevice such as a semiconductor device or an element having a fine structure. In the method for manufacturing an article according to the present embodiment, a latent image pattern is formed on the photosensitive agent applied to the substrate using the above-described exposure apparatus (a step of exposing the substrate), and the latent image pattern is formed in this step. Developing the substrate. Further, the manufacturing method includes other well-known steps (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, and the like). The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferred embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

1: illumination optical system, 2: projection optical system, 3: control unit, 4: console, 5: mask stage, 6: substrate stage, 11: light source, 12: wavelength filter, 24: optical element, 27: drive unit, 100: Exposure apparatus

Claims (11)

  1. An exposure apparatus that exposes a substrate using a phase shift mask that includes a first region and a second region that make phases of transmitted light different from each other
    A first changing unit that changes an illumination wavelength of light that illuminates the phase shift mask;
    A projection optical system that projects a pattern image of the phase shift mask onto the substrate;
    A second changing unit for changing the spherical aberration of the projection optical system;
    The second changing unit based on the reference wavelength and the changed illumination wavelength so that a change in depth of focus caused by changing the illumination wavelength to a wavelength different from the reference wavelength is corrected by the first changing unit. A control unit for controlling the change of the spherical aberration by:
    Including
    The exposure apparatus according to claim 1, wherein the reference wavelength is a wavelength when a phase difference between the transmitted light in the first region and the transmitted light in the second region is 180 degrees.
  2.   The control unit controls the change of the spherical aberration by the second change unit so that a change in depth of focus caused by changing the illumination wavelength by 30 nm or more is corrected by the first change unit. The exposure apparatus according to claim 1.
  3. A light source that emits broad light including a plurality of emission line spectra;
    The exposure apparatus according to claim 1, wherein the first changing unit changes the illumination wavelength by narrowing a wavelength band of the broad light emitted from the light source.
  4.   The control unit controls the second changing unit based on information indicating a change amount of spherical aberration of the projection optical system with respect to a difference between the reference wavelength and the changed illumination wavelength. Item 4. The exposure apparatus according to any one of Items 1 to 3.
  5.   The control unit acquires the information by changing the illumination wavelength to each of a plurality of different wavelengths, and obtaining the spherical aberration of the projection optical system that provides the maximum depth of focus for each of the plurality of wavelengths. The exposure apparatus according to claim 4, wherein:
  6.   The said 2nd change part changes the spherical aberration of the said projection optical system by moving the optical element arrange | positioned on the optical path in the said projection optical system, The one of the Claims 1 thru | or 5 characterized by the above-mentioned. 2. The exposure apparatus according to item 1.
  7.   The said 2nd change part changes the spherical aberration of the said projection optical system by replacing | exchanging the optical element arrange | positioned on the optical path in the said projection optical system, The one of the Claims 1 thru | or 5 characterized by the above-mentioned. 2. The exposure apparatus according to item 1.
  8. The projection optical system includes a concave mirror and a convex mirror,
    8. The exposure apparatus according to claim 6, wherein the optical element includes a meniscus lens disposed on an optical path between the concave mirror and the convex mirror.
  9. A third changing unit for changing the defocus amount;
    9. The control unit according to claim 1, wherein the control unit controls the third control unit so that a defocus amount after controlling the second changing unit is corrected. 10. Exposure equipment.
  10. A step of exposing the substrate using the exposure apparatus according to any one of claims 1 to 9,
    Developing the substrate exposed in the step;
    A method for producing an article comprising:
  11. An exposure method for exposing the substrate using a phase shift mask including a first region and a second region having different phases of transmitted light, and a projection optical system that projects a pattern image of the phase shift mask onto the substrate. ,
    Changing the illumination wavelength of the light that illuminates the phase shift mask to a wavelength different from the reference wavelength when the phase difference between the transmitted light in the first region and the transmitted light in the second region is 180 degrees;
    Changing spherical aberration of the projection optical system based on the reference wavelength and the illumination wavelength so that a change in depth of focus caused by changing the illumination wavelength is corrected;
    An exposure method comprising:
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KR1020160165530A KR20170072128A (en) 2015-12-16 2016-12-07 Exposure apparatus, exposure method, and method of manufacturing article
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JPH1022198A (en) * 1996-07-04 1998-01-23 Hitachi Ltd Exposure method and light exposure device
JP2004205874A (en) * 2002-12-26 2004-07-22 Matsushita Electric Ind Co Ltd Mask and method for manufacturing semiconductor device
EP1628330A4 (en) * 2003-05-28 2009-09-16 Nikon Corp Exposure method, exposure device, and device manufacturing method
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
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