JP2017098407A - 研磨方法 - Google Patents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
- B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
- B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Condensed Matter Physics & Semiconductors (AREA)
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- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract
【解決手段】本発明の方法は、研磨パッド2を支持する研磨テーブル3を回転させ、ウェーハWの表面を研磨パッド2に押し付け、研磨テーブル3が直近の所定の回数だけ回転している間に、研磨テーブル3に設置された膜厚センサ7からの複数の膜厚信号を取得し、複数の膜厚信号から複数の測定膜厚を決定し、複数の測定膜厚に基づいて、ウェーハWの表面に形成された凸部の最頂部の推定膜厚を決定し、凸部の最頂部の推定膜厚に基づいてウェーハWの研磨を監視する。
【選択図】図1
Description
本発明の好ましい態様は、前記凸部の最頂部の推定膜厚を決定する工程は、前記回帰線を決定した後に、前記回帰線よりも下側にあるデータ点のうちの少なくとも1つを前記複数のデータ点から除外し、前記少なくとも1つのデータ点が除外された前記複数のデータ点に回帰分析を行って新たな回帰線を決定する工程をさらに含み、前記研磨テーブルの現在の回転回数を、前記新たな回帰線を表す関数に代入することによって推定膜厚を決定することを特徴とする。
本発明の好ましい態様は、前記凸部の最頂部の推定膜厚を決定する工程は、前記直近の複数の測定膜厚の確率分布を生成し、より小さい測定膜厚の確率が所定の値になる推定膜厚を決定する工程であることを特徴とする。
本発明の好ましい態様は、前記膜厚センサは、渦電流センサであることを特徴とする。
本発明の好ましい態様は、前記凸部の最頂部の推定膜厚に基づいてウェーハの研磨終点を決定することを特徴とする。
本発明の好ましい態様は、前記凸部の最頂部の推定膜厚に基づいてウェーハの研磨条件を変更することを特徴とする。
本発明の好ましい態様は、前記凸部の最頂部の推定膜厚の現在の値と過去の値に基づいて、前記膜厚センサが次に膜厚信号を取得する前に、前記凸部の最頂部の膜厚を予測し、前記予測された膜厚に基づいてウェーハの研磨終点を決定することを特徴とする。
研磨テーブル3の回転回数の所定の値M=30
測定膜厚の所定の数N=8
所定の比率 F=0
回帰次数 1(直線回帰)
図8から分かるように、局所的に最大となる膜厚の推定値は、データ点の分布の概ね上端に位置する。
T=(Dc-Dt)/(Dp−Dc)×K・To
D=Dc-(Dp−Dc)/(K・To)×Δt
2 研磨パッド
3 研磨テーブル
5 研磨液供給ノズル
7 膜厚センサ
9 処理部
10 ヘッドシャフト
21 ヘッド本体
22 リテーナリング
24 メンブレン
25 メンブレンホルダー
26 ローリングダイヤフラム
28 ロータリージョイント
30 気体供給源
42 投光部
43 受光部(光ファイバー)
44 分光器
47 光源
48 光ファイバー
Claims (10)
- 表面に凸部が形成されたウェーハを研磨する方法であって、
研磨パッドを支持する研磨テーブルを回転させ、
ウェーハの表面を前記研磨パッドに押し付け、
前記研磨テーブルが直近の所定の回数だけ回転している間に、前記研磨テーブルに設置された膜厚センサからの複数の膜厚信号を取得し、
前記複数の膜厚信号から複数の測定膜厚を決定し、
前記複数の測定膜厚に基づいて、前記凸部の最頂部の推定膜厚を決定し、
前記凸部の最頂部の推定膜厚に基づいてウェーハの研磨を監視することを特徴とする方法。 - 前記凸部の最頂部の推定膜厚を決定する工程は、
前記直近の複数の測定膜厚と、対応する前記研磨テーブルの回転回数とにより特定される複数のデータ点に回帰分析を行って回帰線を決定し、
前記回帰線を表す関数に前記研磨テーブルの現在の回転回数を代入することにより、推定膜厚を決定する工程であることを特徴とする請求項1に記載の方法。 - 前記凸部の最頂部の推定膜厚を決定する工程は、
前記回帰線を決定した後に、前記回帰線よりも下側にあるデータ点のうちの少なくとも1つを前記複数のデータ点から除外し、
前記少なくとも1つのデータ点が除外された前記複数のデータ点に回帰分析を行って新たな回帰線を決定する工程をさらに含み、
前記研磨テーブルの現在の回転回数を、前記新たな回帰線を表す関数に代入することによって推定膜厚を決定することを特徴とする請求項2に記載の方法。 - 前記凸部の最頂部の推定膜厚を決定する工程は、
前記直近の複数の推定膜厚と、対応する前記研磨テーブルの回転回数とにより特定される複数のデータ点に回帰分析を行って回帰線を決定し、
前記回帰線を表す関数に前記研磨テーブルの現在の回転回数を代入して得られた値に所定のオフセット値を加算することにより、推定膜厚を決定する工程であることを特徴とする請求項1に記載の方法。 - 前記凸部の最頂部の推定膜厚を決定する工程は、
前記直近の複数の測定膜厚の確率分布を生成し、
より小さい測定膜厚の確率が所定の値になる推定膜厚を決定する工程であることを特徴とする請求項1に記載の方法。 - 前記膜厚センサは、パルス点灯光源を有する光学式センサであることを特徴とする請求項1に記載の方法。
- 前記膜厚センサは、渦電流センサであることを特徴とする請求項1に記載の方法。
- 前記凸部の最頂部の推定膜厚に基づいてウェーハの研磨終点を決定することを特徴とする請求項1に記載の方法。
- 前記凸部の最頂部の推定膜厚に基づいてウェーハの研磨条件を変更することを特徴とする請求項1に記載の方法。
- 前記凸部の最頂部の推定膜厚の現在の値と過去の値に基づいて、前記膜厚センサが次に膜厚信号を取得する前に、前記凸部の最頂部の膜厚を予測し、前記予測された膜厚に基づいてウェーハの研磨終点を決定することを特徴とする請求項1に記載の方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP2015229002A JP6475604B2 (ja) | 2015-11-24 | 2015-11-24 | 研磨方法 |
TW105138057A TWI669758B (zh) | 2015-11-24 | 2016-11-21 | 研磨方法 |
KR1020160154758A KR101985998B1 (ko) | 2015-11-24 | 2016-11-21 | 연마 방법 |
CN201611023375.5A CN106863108B (zh) | 2015-11-24 | 2016-11-21 | 研磨方法 |
US15/357,706 US10056277B2 (en) | 2015-11-24 | 2016-11-21 | Polishing method |
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JP2015229002A JP6475604B2 (ja) | 2015-11-24 | 2015-11-24 | 研磨方法 |
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JP2017098407A true JP2017098407A (ja) | 2017-06-01 |
JP6475604B2 JP6475604B2 (ja) | 2019-02-27 |
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CN106863108A (zh) | 2017-06-20 |
KR20170060586A (ko) | 2017-06-01 |
CN106863108B (zh) | 2019-06-25 |
JP6475604B2 (ja) | 2019-02-27 |
US20170148655A1 (en) | 2017-05-25 |
US10056277B2 (en) | 2018-08-21 |
TWI669758B (zh) | 2019-08-21 |
KR101985998B1 (ko) | 2019-06-04 |
TW201729289A (zh) | 2017-08-16 |
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