JP2017038037A - Production method for metal wiring - Google Patents

Production method for metal wiring Download PDF

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JP2017038037A
JP2017038037A JP2016075221A JP2016075221A JP2017038037A JP 2017038037 A JP2017038037 A JP 2017038037A JP 2016075221 A JP2016075221 A JP 2016075221A JP 2016075221 A JP2016075221 A JP 2016075221A JP 2017038037 A JP2017038037 A JP 2017038037A
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exposed
layer
metal
developer
metal layer
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蘇靜▲文▼
Ching Wen Su
沈泊承
Po Cheng Shen
洪昭南
Chau Nan Hong
陳俊欽
Chun Chin Chen
游閔盛
Min Sheng Yu
陳▲彦▼傅
Yen Fu Chen
李祖宏
Tsu Hung Li
王世昌
Shih Chang Wang
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馗鼎奈米科技股▲分▼有限公司
Creating Nano Technologies Inc
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Priority to TW104126417A priority Critical patent/TWI546002B/en
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/052Magnetographic patterning
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/09Treatments involving charged particles
    • H05K2203/095Plasma, e.g. for treating a substrate to improve adhesion with a conductor or for cleaning holes

Abstract

PROBLEM TO BE SOLVED: To provide a production method for metal wiring.SOLUTION: A production method for metal wiring includes the steps of: providing a substrate having a surface on which a metal layer and a photoresist layer are provided sequentially; exposing the photoresist layer so as to form an exposure part and a non-exposure part; performing development so as to expose a part of the metal layer, by removing the exposure part or non-exposure part, and then leaving a part of the developer in the exposure part of the metal layer; performing plasma processing so as to form a plurality of hydrophilic functional groups in the remaining developer and the exposure part of the metal layer; and etching the exposure part of the metal layer with an etchant, so as to remove the exposure part of the metal layer, and removing the remaining developer in combination with the etchant and the hydrophilic functional group in the remaining developer, in the way of etching.SELECTED DRAWING: Figure 1D

Description

本発明は、電子デバイスの製造に関し、特に、金属配線の製造方法に関する。   The present invention relates to manufacturing of electronic devices, and more particularly to a method of manufacturing metal wiring.
近来、自己感光性重合体の乾性画像転移膜である、一般にドライフィルム(dry film)と呼ばれるものが現れてから、プリント回路板(printed circuit board;PCB)の製造業界では、画像を転移するには、従来のウェットフォトレジストの代わりにその技術が用いられてきた。一般的には、ドライフィルムは、カバーフィルム層、セパレータ層、及びそれらの間に挟まれる感光性レジスト層等の順次に積層された3つの部分からなる。カバーフィルム層の材料としては、一般的に、例えば、ポリエチレンテレフタレート(polyethylene terephthalate;PET)のようなポリエステル類が用いられる。セパレータ層の材料としては、一般的に、ポリエチレン成分である。   In recent years, since a dry image transfer film of a self-photosensitive polymer, generally called a dry film, has appeared, the printed circuit board (PCB) manufacturing industry has been trying to transfer an image. Has been used in place of conventional wet photoresists. Generally, a dry film consists of three parts laminated | stacked sequentially, such as a cover film layer, a separator layer, and the photosensitive resist layer pinched | interposed between them. As a material for the cover film layer, for example, polyesters such as polyethylene terephthalate (PET) are generally used. The material for the separator layer is generally a polyethylene component.
ドライフィルムは、そのフォトレジストの形態によってポジ型ドライフィルム及びネガ型ドライフィルムに分けられる。現在、業界では、ほとんどネガ型ドライフィルムによって生産する。ネガ型ドライフィルムが露光された後、露光された部分は、重合体となって硬化する。そのため、現像された後、ネガ型ドライフィルムの露光されない部分が除去され、露光し硬化された重合体のみが残って、所望の配線のパターンが得られる。   The dry film is classified into a positive dry film and a negative dry film depending on the form of the photoresist. Currently, the industry mostly produces with negative dry film. After the negative dry film is exposed, the exposed portion becomes a polymer and is cured. Therefore, after the development, the unexposed portion of the negative dry film is removed, and only the exposed and cured polymer remains, and a desired wiring pattern is obtained.
しかし、現像プロセス後、一般的に、現像剤の一部が依然として製造しようとする配線の金属層に残って、残った現像剤に高濃度のフォトレジスト成分が含まれる。これらの高濃度のフォトレジスト成分を含む現像剤は、完全に取り除かれないと、金属層の表面にスカム(scum)を形成しやすい。これらのスカムにより、後で十分にエッチングされず、金属配線のパターンの定義とサイズがひどく影響され、更に、製品の歩留まりが不良になる。   However, after the development process, generally, a part of the developer still remains in the metal layer of the wiring to be manufactured, and the remaining developer contains a high concentration of a photoresist component. Developers containing these high-concentration photoresist components tend to form scum on the surface of the metal layer if not completely removed. These scums are not sufficiently etched later, and the definition and size of the metal wiring pattern are severely affected, and the product yield is poor.
エッチングプロセスの途中、これらのスカムを除去するには、一般的に、より多くのエッチング剤が必要である。このように、金属層にオーバエッチングが発生するだけではなく、エッチング剤も浪費され、プロセスのコストが向上する。   To remove these scums during the etching process, more etchant is generally required. Thus, not only overetching occurs in the metal layer, but also the etching agent is wasted, and the cost of the process is improved.
そのため、本発明の目的は、フォトレジストであるドライフィルムが露光・現像された後、先に大気プラズマによって金属層の表面に残った現像剤に対してプラズマ処理を行うことで、残った現像剤を除去し、及び/又は残った現像剤に対して表面改質を行い、このように、残った現像剤及びそれに含まれるドライフィルム成分は、プラズマ又は後のエッチングプロセスに用いられるエッチング剤によって効果的に除去され、金属配線パターンの移動の正確性を向上させ、エッチングプロセスの歩留まりを向上させ、更に、金属配線の品質を向上させることができる金属配線の製造方法を提供することでる。   Therefore, the object of the present invention is to perform a plasma treatment on the developer remaining on the surface of the metal layer by atmospheric plasma after the dry film which is a photoresist is exposed and developed, thereby remaining developer. And / or surface modification of the remaining developer, so that the remaining developer and the dry film components contained therein are effective by the plasma or the etchant used in the subsequent etching process. The present invention provides a method of manufacturing a metal wiring that can be removed and improve the accuracy of movement of the metal wiring pattern, improve the yield of the etching process, and improve the quality of the metal wiring.
本発明の別の目的は、現像後で導入された大気プラズマが、現像剤及びその内のドライフィルム成分の除去に寄与するだけではなく、更に一部の細かい有機物を取り除くことに寄与し、金属層の表面を粗化し、金属層の表面に親水性の官能基を形成することができるため、金属層の表面の濡れ性を向上させ、更に、後で金属層の表面に形成された材料層の金属層に対する付着性を向上させることができる金属配線の製造方法を提供することである。   Another object of the present invention is that the atmospheric plasma introduced after the development not only contributes to the removal of the developer and the dry film components therein, but also contributes to the removal of some fine organic substances. Since the surface of the layer can be roughened and hydrophilic functional groups can be formed on the surface of the metal layer, the wettability of the surface of the metal layer is improved, and the material layer formed later on the surface of the metal layer It is providing the manufacturing method of the metal wiring which can improve the adhesiveness with respect to the metal layer.
本発明の上記目的によると、表面に金属層が設けられ、フォトレジスト層が金属層に位置する基板を提供する工程と、前記フォトレジスト層に少なくとも1つの露光部及び少なくとも1つの非露光部を形成するように、フォトレジスト層に対して露光工程を行う工程と、前記少なくとも1つの露光部又は少なくとも1つの非露光部を除去して、金属層の一部を露出させるように、現像剤によって現像を行い、その後、現像剤の一部を金属層の露出部に残す工程と、現像剤の残り部と金属層の露出部に複数の親水性官能基を形成するように、プラズマ処理を行う工程と、金属層の露出部を除去するように、エッチング剤によって金属層の露出部に対してエッチングを行い、エッチング工程の途中、エッチング剤が現像剤の残り部における親水性官能基と結合し、現像剤の残り部を除去する工程とを備える金属配線の製造方法を提供する。   According to the above object of the present invention, a step of providing a substrate having a metal layer on a surface and a photoresist layer positioned on the metal layer, and at least one exposed portion and at least one non-exposed portion on the photoresist layer. A step of performing an exposure process on the photoresist layer to form a photoresist layer and a developer so as to remove the at least one exposed portion or the at least one non-exposed portion and expose a part of the metal layer. After developing, a process of leaving a part of the developer on the exposed part of the metal layer and a plasma treatment so as to form a plurality of hydrophilic functional groups on the remaining part of the developer and the exposed part of the metal layer Etching the exposed portion of the metal layer with an etchant so as to remove the process and the exposed portion of the metal layer, and the etchant is hydrophilic in the remaining portion of the developer during the etching process. Combined with functional group, to provide a method of manufacturing a metal wiring and a step of removing the remaining portion of the developer.
本発明の一実施例によると、前記エッチング工程を行う場合、二流体エッチング技術を利用することを含む。   According to an embodiment of the present invention, performing the etching process includes using a two-fluid etching technique.
本発明の別の実施例によると、前記フォトレジスト層は、ドライフィルム層である。   According to another embodiment of the present invention, the photoresist layer is a dry film layer.
本発明のまた別の実施例によると、前記フォトレジスト層は、ネガ型フォトレジスト層であり、現像工程では前記少なくとも1つの非露光部を除去する。   According to still another embodiment of the present invention, the photoresist layer is a negative photoresist layer, and the at least one non-exposed portion is removed in a developing process.
本発明のまた1つの実施例によると、前記フォトレジスト層は、ポジ型フォトレジスト層であり、現像工程では前記少なくとも1つの露光部を除去する。   According to still another embodiment of the present invention, the photoresist layer is a positive photoresist layer, and the at least one exposed portion is removed in a developing process.
本発明のまた1つの実施例によると、前記プラズマ処理を行う場合、窒素ガス(N2)、又は窒素ガスと清潔で乾燥した空気(clear dry air;CDA)からなる処理ガスを利用することを含む。 According to another embodiment of the present invention, when the plasma treatment is performed, a treatment gas composed of nitrogen gas (N 2 ) or nitrogen gas and clean dry air (CDA) is used. Including.
本発明のまた1つの実施例によると、前記プラズマ処理を行う場合、アルゴンガス(Ar)、アルゴンガスと清潔で乾燥した空気、又はアルゴンガスと清潔で乾燥した空気及び窒素ガスからなる処理ガスを利用することを含む。   According to another embodiment of the present invention, when performing the plasma treatment, a processing gas comprising argon gas (Ar), argon gas and clean and dry air, or argon gas and clean and dry air and nitrogen gas is used. Including use.
本発明のまた1つの実施例によると、前記プラズマ処理を行う場合、大気プラズマを利用することを含む。   According to another embodiment of the present invention, the plasma treatment includes using atmospheric plasma.
本発明のまた1つの実施例によると、前記親水性官能基は、水酸基(OH)、炭素酸素単結合(C-O)、炭素酸素二重結合(C=O)、カルボキシル基(COOH)、アミノ基、アミン基、及び/又はペルオキシド基(-O-O-)を含む。   According to another embodiment of the present invention, the hydrophilic functional group includes a hydroxyl group (OH), a carbon oxygen single bond (C—O), a carbon oxygen double bond (C═O), a carboxyl group (COOH), It contains an amino group, an amine group, and / or a peroxide group (—O—O—).
本発明のまた1つの実施例によると、前記プラズマ処理は、現像剤の残り部と金属層の露出部とに30°以下の接触角を持たせることを含む。   According to another embodiment of the present invention, the plasma treatment includes providing a contact angle of 30 ° or less between the remaining portion of the developer and the exposed portion of the metal layer.
下記の添付図面の説明は、本発明の上記又はその他の目的、特徴、利点及び実施例をより分りやすくするためのものである。   The following description of the accompanying drawings is intended to make the above and other objects, features, advantages and embodiments of the present invention more comprehensible.
本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on one Embodiment of this invention. 本発明の別の実施形態に係る金属配線の製造方法のプロセスを示す断面図であるIt is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on another embodiment of this invention. 本発明の別の実施形態に係る金属配線の製造方法のプロセスを示す断面図である。It is sectional drawing which shows the process of the manufacturing method of the metal wiring which concerns on another embodiment of this invention.
本発明の一実施形態に係る金属配線の製造方法のプロセスを示す断面図である図1A〜図1Fを参照されたい。本実施形態の金属配線の製造方法は、例えば、プリント回路板又はフレキシブル回路板(Flexible Printed Circuits Board;FPCB)の金属配線の製造のような、様々な半導体プロセスに適用されることができる。   Please refer to FIG. 1A to FIG. 1F which are cross-sectional views showing a process of a metal wiring manufacturing method according to an embodiment of the present invention. The metal wiring manufacturing method of the present embodiment can be applied to various semiconductor processes such as manufacturing of a printed circuit board or a flexible printed circuit board (FPCB).
ある実施例において、図1Aに示すように、金属配線を製造する場合、まず、基板100を提供してよい。基板100の材料としては、例えば、金属、セラミック、高分子重合体等を含んでもよい。また、基板100は、単層構造でもよいし、多層の積層構造でもよい。次に、基板100の表面102に金属層104を形成する。金属層104は、例えば、銅層又はアルミニウム層を含んでもよい。そして、金属層104の表面106にフォトレジスト層108を塗布する。フォトレジスト層108は、ネガ型フォトレジスト層であってもよし、ポジ型フォトレジスト層であってもよい。ある例において、フォトレジスト層108は、例えば、ネガ型ドライフィルム又はポジ型ドライフィルムのようなドライフィルム層であってもよい。   In some embodiments, as shown in FIG. 1A, when manufacturing metal wiring, a substrate 100 may be provided first. Examples of the material of the substrate 100 may include a metal, a ceramic, and a high molecular polymer. The substrate 100 may have a single layer structure or a multilayer structure. Next, a metal layer 104 is formed on the surface 102 of the substrate 100. The metal layer 104 may include, for example, a copper layer or an aluminum layer. Then, a photoresist layer 108 is applied to the surface 106 of the metal layer 104. The photoresist layer 108 may be a negative photoresist layer or a positive photoresist layer. In one example, the photoresist layer 108 may be a dry film layer such as, for example, a negative dry film or a positive dry film.
そして、図1Bに示すように、形成しようとする金属配線パターンを有するマスク(図示せず)を介して、フォトレジスト層108に対して露光工程を行って、フォトレジスト層108に少なくとも1つの露光部110と少なくとも1つの非露光部112を形成する。図1Bに示す例示的な例において、露光工程では、フォトレジスト層108に2つの露光部110と3つの非露光部112を形成する。ある例において、フォトレジスト層108がネガ型フォトレジスト層であるため、露光部110は、重合体として硬化する。別のある例において、フォトレジスト層108がポジ型フォトレジスト層であるため、露光部110は、柔らかくなり又は分解する。   Then, as shown in FIG. 1B, an exposure process is performed on the photoresist layer 108 through a mask (not shown) having a metal wiring pattern to be formed, and at least one exposure is performed on the photoresist layer 108. A portion 110 and at least one non-exposed portion 112 are formed. In the exemplary example shown in FIG. 1B, in the exposure process, two exposed portions 110 and three non-exposed portions 112 are formed in the photoresist layer 108. In one example, since the photoresist layer 108 is a negative photoresist layer, the exposed portion 110 is cured as a polymer. In another example, the exposed portion 110 becomes soft or decomposes because the photoresist layer 108 is a positive photoresist layer.
フォトレジスト層108の露光工程を完成した後、フォトレジスト層108の一部を除去して、金属層104の表面106の一部を露出させるように、現像剤によってフォトレジスト層108に対して現像工程を行う。フォトレジスト層108がネガ型フォトレジスト層である例において、図1Cに示すように、露光部110が露光されて硬化するため、現像工程で非露光部112が除去され、非露光部112の下方の金属層104の表面106が露出される。フォトレジスト層108がポジ型フォトレジスト層である例において、露光部110が露光された後で柔らかくなり又は分解するので、現像工程により露光部110を除去して、露光部110の下方の金属層104の表面106を露出させる。以下、フォトレジスト層108がネガ型フォトレジスト層である態様を例として説明する。   After completing the exposure process of the photoresist layer 108, the photoresist layer 108 is developed with a developer so that a part of the photoresist layer 108 is removed and a part of the surface 106 of the metal layer 104 is exposed. Perform the process. In an example in which the photoresist layer 108 is a negative photoresist layer, as shown in FIG. 1C, the exposed portion 110 is exposed and cured, so the non-exposed portion 112 is removed in the development process, and the lower portion of the non-exposed portion 112 is removed. The surface 106 of the metal layer 104 is exposed. In an example in which the photoresist layer 108 is a positive photoresist layer, the exposed portion 110 becomes soft or decomposes after being exposed. Therefore, the exposed portion 110 is removed by a development process, and a metal layer below the exposed portion 110 is removed. The surface 106 of 104 is exposed. Hereinafter, an example in which the photoresist layer 108 is a negative photoresist layer will be described.
現像工程の後、現像剤が完全に取り除かれず、金属層104の表面106とフォトレジスト層108の露光部110に残る場合がある。これらの現像剤の残り部114には、一般的に、高濃度のフォトレジスト成分が含まれる。次に、図1Dに示すように、プラズマ116によって金属層104の表面106の露出部、現像剤の残り部114とフォトレジスト層108の露光部110に対してプラズマ処理を行う。プラズマ処理としては、例えば、大気プラズマを使用してもよい。ある例において、プラズマ処理を行う場合、窒素ガス、又は窒素ガスと清潔で乾燥した空気からなる処理ガスを利用する。別のある例において、プラズマ処理に用いられる処理ガスは、アルゴンガス、アルゴンガスと清潔で乾燥した空気、又はアルゴンガスと清潔で乾燥した空気及び窒素ガスを含んでもよい。   After the development process, the developer may not be completely removed and may remain on the surface 106 of the metal layer 104 and the exposed portion 110 of the photoresist layer 108. The remaining portion 114 of these developers generally contains a high concentration photoresist component. Next, as shown in FIG. 1D, plasma treatment is performed on the exposed portion of the surface 106 of the metal layer 104, the remaining portion 114 of the developer, and the exposed portion 110 of the photoresist layer 108 by plasma 116. As the plasma treatment, for example, atmospheric plasma may be used. In an example, when performing plasma processing, nitrogen gas or a processing gas composed of nitrogen gas and clean and dry air is used. In another example, the process gas used for plasma processing may include argon gas, argon gas and clean and dry air, or argon gas and clean and dry air and nitrogen gas.
ある例において、このプラズマ処理では大気プラズマを採用する。処理ガスを入れた後、外部電圧が処理ガスの破壊電圧より高く、ガス分子(例えば、窒素ガスと清潔で乾燥した空気)が励起され、例えば、N2 *、N*、N+、O*及び/又はO+のような高活性粒子が発生される。これらの高活性粒子が現像剤の残り部114における有機物を気体の炭素酸素分子CO、気体のCHxy等に転換することで、現像剤の残り部114を除去し、洗浄の効果を達成することができる。プラズマ処理によって金属層の表面を粗化し、後で金属層の表面に形成された材料層の金属層に対する付着力を向上させることができる。 In one example, the plasma treatment employs atmospheric plasma. After the processing gas is introduced, the external voltage is higher than the breakdown voltage of the processing gas, and gas molecules (for example, nitrogen gas and clean and dry air) are excited, for example, N 2 * , N * , N + , O *. And / or highly active particles such as O + are generated. These highly active particles convert the organic matter in the remaining portion 114 of the developer into gaseous carbon oxygen molecules CO, gaseous CH x O y, etc., thereby removing the remaining portion 114 of the developer and achieving a cleaning effect. can do. The surface of the metal layer can be roughened by plasma treatment, and the adhesion of the material layer formed on the surface of the metal layer to the metal layer can be improved.
また、これらの高活性粒子は、本来の有機炭素鎖の代わりに、現像剤の残り部114と金属層104の表面106の露出部に多くの親水性官能基を形成して、現像剤の残り部114と金属層104の表面106の露出部に対して表面改質を行うこともできる。ある例示的な例において、親水性官能基は、水酸基(OH)、炭素酸素単結合(C-O)、炭素酸素二重結合(C=O)、カルボキシル基(COOH)、アミノ基、アミン基、及び/又はペルオキシド基(-O-O-)を含む。ある例示的な例において、プラズマ処理によって現像剤の残り部114と金属層104の表面106の露出部に多くの親水性官能基を形成できるため、現像剤の残り部114と金属層104の表面106の露出部の濡れ性を向上させることができる。例としては、プラズマ処理された後で、現像剤の残り部114と金属層104の表面106の露出部に例えば、30°以下の接触角を有してもよい。   Further, these highly active particles form many hydrophilic functional groups in the remaining portion 114 of the developer and the exposed portion of the surface 106 of the metal layer 104 instead of the original organic carbon chain, and the remaining portion of the developer. Surface modification can also be performed on the exposed portion of the surface 106 of the portion 114 and the metal layer 104. In an illustrative example, the hydrophilic functional group includes a hydroxyl group (OH), a carbon oxygen single bond (C—O), a carbon oxygen double bond (C═O), a carboxyl group (COOH), an amino group, and an amine group. And / or a peroxide group (—O—O—). In one illustrative example, the plasma treatment can form many hydrophilic functional groups on the remaining portion 114 of the developer and the exposed portion of the surface 106 of the metal layer 104, so that the remaining portion of the developer 114 and the surface of the metal layer 104 can be formed. The wettability of the exposed portion 106 can be improved. For example, after the plasma treatment, the remaining portion 114 of the developer and the exposed portion of the surface 106 of the metal layer 104 may have a contact angle of, for example, 30 ° or less.
プラズマ処理を完成した後、フォトレジスト層108の露光部110はエッチングマスクであり、エッチング剤によって金属層104の露出部を除去して、下部の基板100の表面102を露出させるように、金属層104の露出部に対してエッチング工程を行う。このエッチング工程の途中、エッチング剤は、現像剤の残り部114上及び金属層104の表面106上の細かい有機物における親水性官能基と結合し、エッチング剤が除去されるにつれて、現像剤の残り部114と細かい有機物を金属層104の表面106から除いて、金属層104の表面106における現像剤の残り部114と細かい有機物を効果的に除去することができる。従って、図1Eに示すように、エッチング剤は、金属層104の露出部を順調に除去して、下部の基板100の表面102を露出させ、フォトレジスト層108の露光部110のパターンを金属層104に正確に移動させ、更に、基板100の表面102に所望の金属配線118を形成することができる。ある実施例において、エッチング工程を行う場合、二流体エッチング機械を利用することを含み、二流体エッチング技術によってこのエッチング工程を行うことができる。別のある実施例において、エッチング工程を行う場合、例えば、ウェットエッチング機械のような普通のエッチング機械を利用し、普通のエッチング技術によってこのエッチング工程を行うことができる。   After the plasma treatment is completed, the exposed portion 110 of the photoresist layer 108 is an etching mask, and the exposed portion of the metal layer 104 is removed by an etchant so that the surface 102 of the lower substrate 100 is exposed. An etching process is performed on the exposed portion 104. During this etching process, the etchant binds to the hydrophilic functional groups in the fine organic matter on the remainder 114 of the developer and on the surface 106 of the metal layer 104, and as the etchant is removed, the remainder of the developer. 114 and fine organic matter can be removed from the surface 106 of the metal layer 104, and the remaining developer 114 and fine organic matter on the surface 106 of the metal layer 104 can be effectively removed. Accordingly, as shown in FIG. 1E, the etchant smoothly removes the exposed portion of the metal layer 104, exposes the surface 102 of the lower substrate 100, and exposes the pattern of the exposed portion 110 of the photoresist layer 108 to the metal layer. The desired metal wiring 118 can be formed on the surface 102 of the substrate 100. In certain embodiments, performing the etching process may include utilizing a two-fluid etching machine, and the etching process may be performed by a two-fluid etching technique. In another embodiment, when performing the etching process, this etching process can be performed by a conventional etching technique using, for example, a normal etching machine such as a wet etching machine.
金属層104のエッチング工程を完成した後、図1Fに示すように、フォトレジスト層108の露光部110の残部を除去して、金属配線118の製造を完成する。   After completing the etching process of the metal layer 104, as shown in FIG. 1F, the remaining portion of the exposed portion 110 of the photoresist layer 108 is removed to complete the manufacture of the metal wiring 118.
図1Bに合わせて、本発明の別の実施形態に係る金属配線の製造方法のプロセスを示す断面図である図2Aと図2Bを参照されたい。ある例において、図2Aに示すように、フォトレジスト層108は、ポジ型フォトレジスト層であり、フォトレジスト層108の露光工程と現像工程が完成された後で、フォトレジスト層108の露光部110を除去して、露光部110の下方の金属層104の表面106を露出させ、配線の雛型を形成する。この場合、上記実施例と同様に、プラズマによって金属層104の表面106の露出部、現像剤の残り部114とフォトレジスト層108の非露光部112に対してプラズマ処理を行う。このプラズマ処理は、現像剤の残り部114と金属層104の表面106の露出部に多くの親水性官能基を形成できるので、現像剤の残り部114と金属層104の表面106の露出部の濡れ性を向上させることができる以外、金属層104の表面106を粗化することもできる。そのため、プラズマ処理を完成した後、現像剤の残り部114を除去するために、先にウェット洗浄処理を行ってもよい。そして、例えば、電気メッキによって、金属層104の表面106の露出部に金属配線120を形成してよい。その後、フォトレジスト層108の非露光部112の残部を除去して、金属配線120の製造を完成すればよい。金属層104の表面106の露出部がプラズマ処理中で粗化されるため、金属配線120は、金属層104の表面106の露出部に対して優れる付着力を有する。   Please refer to FIG. 2A and FIG. 2B which are sectional views showing the process of the manufacturing method of the metal wiring according to another embodiment of the present invention in accordance with FIG. 1B. In one example, as shown in FIG. 2A, the photoresist layer 108 is a positive photoresist layer, and after the exposure process and the development process of the photoresist layer 108 are completed, an exposed portion 110 of the photoresist layer 108 is obtained. Is removed to expose the surface 106 of the metal layer 104 below the exposed portion 110 to form a wiring template. In this case, plasma processing is performed on the exposed portion of the surface 106 of the metal layer 104, the remaining portion 114 of the developer, and the non-exposed portion 112 of the photoresist layer 108 by plasma as in the above embodiment. Since this plasma treatment can form many hydrophilic functional groups on the remaining portion 114 of the developer and the exposed portion of the surface 106 of the metal layer 104, the remaining portion 114 of the developer and the exposed portion of the surface 106 of the metal layer 104 are formed. Besides improving the wettability, the surface 106 of the metal layer 104 can be roughened. Therefore, after the plasma processing is completed, wet cleaning processing may be performed first in order to remove the remaining portion 114 of the developer. Then, for example, the metal wiring 120 may be formed on the exposed portion of the surface 106 of the metal layer 104 by electroplating. Thereafter, the remainder of the non-exposed portion 112 of the photoresist layer 108 may be removed to complete the manufacture of the metal wiring 120. Since the exposed portion of the surface 106 of the metal layer 104 is roughened during the plasma treatment, the metal wiring 120 has excellent adhesion to the exposed portion of the surface 106 of the metal layer 104.
上記の実施形態から、本発明の一つのメリットは、本発明の金属配線の製造方法において、フォトレジストであるドライフィルムが露光・現像された後、先に大気プラズマによって金属層の表面に残った現像剤に対してプラズマ処理を行うことで、残った現像剤を除去し、及び/又は残った現像剤に対して表面改質を行うことにあることが判明された。このように、残った現像剤及びそれに含まれるドライフィルム成分は、プラズマ又は後のエッチングプロセスに用いられるエッチング剤によって効果的に除去され、金属配線パターンの移動の正確性を向上させ、エッチングプロセスの歩留まりを向上させ、更に、金属配線の品質を向上させることができる。   From the above embodiments, one merit of the present invention is that, in the metal wiring manufacturing method of the present invention, after a dry film as a photoresist is exposed and developed, it is left on the surface of the metal layer by atmospheric plasma first. It has been found that plasma treatment is performed on the developer to remove the remaining developer and / or to perform surface modification on the remaining developer. In this way, the remaining developer and the dry film component contained therein are effectively removed by the plasma or the etching agent used in the subsequent etching process, improving the accuracy of the movement of the metal wiring pattern, and the etching process. The yield can be improved, and further the quality of the metal wiring can be improved.
上記の実施形態から、本発明の別のメリットは、本発明の金属配線の製造方法において、現像後で導入された大気プラズマが、現像剤及びその内のドライフィルム成分の除去に寄与するだけではなく、一部の細かい有機物の取り除きに寄与し、金属層の表面を粗化し、金属層の表面に親水性の官能基を形成することができるため、金属層の表面の濡れ性を向上させ、更に、後で金属層の表面に形成された材料層の金属層に対する付着性を向上させることができることにあることが判明された。   From the above embodiment, another merit of the present invention is that the atmospheric plasma introduced after development contributes to the removal of the developer and the dry film components therein in the metal wiring manufacturing method of the present invention. And contribute to the removal of some fine organic matter, roughen the surface of the metal layer and form hydrophilic functional groups on the surface of the metal layer, improve the wettability of the surface of the metal layer, Furthermore, it was found that the adhesion of the material layer formed on the surface of the metal layer to the metal layer later can be improved.
本発明の実施例を前記の通りに開示したが、これは、本発明を限定するものではなく、当業者なら誰でも、本発明の精神や範囲から逸脱しない限り、多様の変更や修正を加えることができ、したがって、本発明の保護範囲は、下記添付の特許請求の範囲で指定した内容を基準とするものである。   Although the embodiments of the present invention have been disclosed as described above, this is not intended to limit the present invention, and any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is based on what is specified in the following appended claims.
100 基板、102 表面、104 金属層、106 表面、108 フォトレジスト層、110 露光部、112 非露光部、114 残り部、116 プラズマ、118、120 金属配線。 100 substrate, 102 surface, 104 metal layer, 106 surface, 108 photoresist layer, 110 exposed portion, 112 non-exposed portion, 114 remaining portion, 116 plasma, 118, 120 metal wiring.

Claims (10)

  1. 表面に金属層が設けられ、フォトレジスト層が前記金属層に位置する基板を提供する工程と、
    前記フォトレジスト層に少なくとも1つの露光部及び少なくとも1つの非露光部を形成するように、前記フォトレジスト層に対して露光工程を行う工程と、
    前記少なくとも1つの露光部又は前記少なくとも1つの非露光部を除去して、前記金属層の一部を露出させるように、現像剤によって現像を行い、その後、前記現像剤の一部を前記金属層の露出部に残す工程と、
    前記現像剤の前記残り部と前記金属層の前記露出部に複数の親水性官能基を形成するように、プラズマ処理を行う工程と、
    前記金属層の前記露出部を除去するように、エッチング剤によって前記金属層の前記露出部に対してエッチングを行い、前記エッチング工程の途中、前記エッチング剤が前記現像剤の前記残り部における前記親水性官能基と結合して、前記現像剤の前記残り部を除去する工程と、
    を備える金属配線の製造方法。
    Providing a substrate having a metal layer on a surface and a photoresist layer located on the metal layer;
    Performing an exposure step on the photoresist layer so as to form at least one exposed portion and at least one non-exposed portion in the photoresist layer;
    The at least one exposed part or the at least one non-exposed part is removed, and development is performed with a developer so that a part of the metal layer is exposed, and then a part of the developer is part of the metal layer. Leaving the exposed part of
    Performing plasma treatment so as to form a plurality of hydrophilic functional groups on the remaining portion of the developer and the exposed portion of the metal layer;
    Etching is performed on the exposed portion of the metal layer with an etchant so as to remove the exposed portion of the metal layer, and during the etching process, the etchant becomes the hydrophilic portion of the remaining portion of the developer. Bonding with a functional functional group to remove the remaining portion of the developer;
    A method of manufacturing a metal wiring comprising:
  2. 前記エッチング工程を行う場合、二流体エッチング技術を利用することを含む請求項1に記載の金属配線の製造方法。   The method of manufacturing a metal wiring according to claim 1, wherein when performing the etching step, a two-fluid etching technique is used.
  3. 前記フォトレジスト層は、ドライフィルム層である請求項1又は請求項2に記載の金属配線の製造方法。   The method for manufacturing a metal wiring according to claim 1, wherein the photoresist layer is a dry film layer.
  4. 前記フォトレジスト層は、ネガ型フォトレジスト層であり、前記現像工程では前記少なくとも1つの非露光部を除去する請求項1〜請求項3の何れか一項に記載の金属配線の製造方法。   4. The method of manufacturing a metal wiring according to claim 1, wherein the photoresist layer is a negative photoresist layer, and the at least one non-exposed portion is removed in the developing step. 5.
  5. 前記フォトレジスト層は、ポジ型フォトレジスト層であり、前記現像工程では前記少なくとも1つの露光部を除去する請求項1〜請求項3の何れか一項に記載の金属配線の製造方法。   4. The method of manufacturing a metal wiring according to claim 1, wherein the photoresist layer is a positive photoresist layer, and the at least one exposed portion is removed in the developing step. 5.
  6. 前記プラズマ処理を行う場合、窒素ガス、又は窒素ガスと清潔で乾燥した空気からなる処理ガスを利用することを含む請求項1〜請求項5の何れか一項に記載の金属配線の製造方法。   The method for manufacturing a metal wiring according to any one of claims 1 to 5, comprising using nitrogen gas or a processing gas comprising nitrogen gas and clean and dry air when performing the plasma treatment.
  7. 前記プラズマ処理を行う場合、アルゴンガス、アルゴンガスと清潔で乾燥した空気、又はアルゴンガスと清潔で乾燥した空気及び窒素ガスからなる処理ガスを利用することを含む請求項1〜請求項5の何れか一項に記載の金属配線の製造方法。   6. The method according to any one of claims 1 to 5, wherein when performing the plasma treatment, argon gas, argon gas and clean and dry air, or processing gas comprising argon gas and clean and dry air and nitrogen gas are used. A method for producing a metal wiring according to claim 1.
  8. 前記プラズマ処理を行う場合、大気プラズマを利用することを含む請求項1〜請求項7の何れか一項に記載の金属配線の製造方法。   The method for manufacturing a metal wiring according to any one of claims 1 to 7, comprising using atmospheric plasma when performing the plasma treatment.
  9. 前記親水性官能基は、水酸基(OH)、炭素酸素単結合(C-O)、炭素酸素二重結合(C=O)、カルボキシル基(COOH)、アミノ基、アミン基、及び/又はペルオキシド基(-O-O-)を含む請求項1〜請求項8の何れか一項に記載の金属配線の製造方法。   The hydrophilic functional group includes a hydroxyl group (OH), a carbon oxygen single bond (C—O), a carbon oxygen double bond (C═O), a carboxyl group (COOH), an amino group, an amine group, and / or a peroxide group. The manufacturing method of the metal wiring as described in any one of Claims 1-8 containing (-O-O-).
  10. 前記プラズマ処理は、前記現像剤の前記残り部と前記金属層の前記露出部とに30°以下の接触角を持たせることを含む請求項1〜請求項9の何れか一項に記載の金属配線の製造方法。   10. The metal according to claim 1, wherein the plasma treatment includes imparting a contact angle of 30 ° or less to the remaining portion of the developer and the exposed portion of the metal layer. 11. Wiring manufacturing method.
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