JP2017025347A - Vapor deposition method and vapor deposition apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To uniformize the state in a substrate conveyance direction of a film thickness distribution of host-assist-dopant.SOLUTION: First to third vapor deposition source openings 61a, 61b, 61c are provided with restriction nozzles 61a1-61c6 for restricting directivity in an in-plane direction of first to third vapor deposition particles 91a, 91b, 91c discharged from the first to third vapor deposition source openings and directed toward a substrate 10.SELECTED DRAWING: Figure 6

Description

The present invention relates to a vapor deposition method and a vapor deposition apparatus for forming a film having a predetermined pattern on a substrate. The present invention also provides an organic EL (Electro Luminesc) having a light emitting layer formed by vapor deposition.
ence) A technique suitable for use in manufacturing a display device.

  As an organic EL display device (display) including an organic EL element, for example, there is an active matrix method. In this organic EL display device, a thin-film organic EL element is provided on a substrate provided with a TFT (thin film transistor). ing. In the organic EL element, an organic EL layer including a light emitting layer is laminated between a pair of electrodes. A TFT is connected to one of the pair of electrodes. An image is displayed by applying a voltage between the pair of electrodes to cause the light emitting layer to emit light.

  In a full-color organic EL display device, generally, organic EL elements including light emitting layers of red (R), green (G), and blue (B) are arranged and formed on a substrate as sub-pixels. A color image is displayed by selectively emitting light from these organic EL elements with a desired luminance using TFTs.

In the manufacture of an organic EL display device, a light emitting layer made of an organic light emitting material that emits light of each color is formed in a predetermined pattern for each organic EL element by using a vacuum deposition method.
In the vacuum deposition method, a mask (also referred to as a shadow mask) in which openings having a predetermined pattern are formed is used. The deposition surface of the substrate to which the mask is closely fixed is opposed to the deposition source. And the vapor deposition particle (film-forming material) from a vapor deposition source is vapor-deposited on a vapor deposition surface through the opening of a mask, and the film of a predetermined pattern is formed. Vapor deposition is performed for each color of the light emitting layer (this is called “separate vapor deposition”).

  As a mask, different layers are vapor-deposited using a metal mask (FMM: fine metal mask) having openings with high accuracy. At this time, as shown in Patent Document 1, a deposition mask having a size smaller than that of the deposition substrate (deposition target) is used, and the deposition substrate, the mask unit, and the deposition source are relatively moved. There is known vapor deposition (scan vapor deposition) using a scanning method in which vapor deposition is performed while scanning.

  Further, not all of the vapor deposition particles are directed in the same substrate normal direction, and film formation is performed in a state in which there is an angle from the substrate normal direction to the substrate in-plane direction. Japanese Patent Application Laid-Open No. H10-228707 describes a technique for making the arrangement pitch of the vapor deposition source openings uniform in order to improve the non-uniformity of the density of the vapor deposition particles with respect to the direction orthogonal to the substrate transport direction.

International Publication No. 2014/010284 JP 2004-095275 A International Publication No. 2012/098927

  However, since Patent Document 2 is a technique related to a vapor deposition technique for forming a relatively large region using an open mask, the density distribution of particles reaching the substrate in a direction orthogonal to the substrate transport direction is to some extent. Although it can be controlled, the incident angle of the vapor deposition particles is not controlled. In this case, the spread of the vapor deposition pattern cannot be suppressed, and high-definition coating cannot be realized.

Moreover, as shown in Patent Document 3, in manufacturing a light-emitting device that performs co-evaporation film formation by scan deposition, when the deposition source openings are arranged at different positions with respect to the substrate transport direction, three different deposition sources are used. Since the host assist dopant supplied by each has a different film thickness distribution in the substrate transport direction, the concentration ratios of the three materials differ depending on the film formation position in the substrate transport direction.
Further, in Patent Document 3, it is said that the second vapor deposition source and the third vapor deposition source can be arranged so as to be inclined with each other, and the film thickness distribution in the substrate transport direction can be made uniform. Since the film thickness on the direction extension line is the thickest, it is extremely difficult to make the film thickness distribution in the substrate transport direction uniform.

  In particular, when a mask having at least two rows of openings in the substrate transport direction is used, the positions of the deposition source openings in the front row deposition region and the rear row deposition region where film formation is performed differ from each other in the substrate transport direction. Therefore, there is a difference in vapor deposition material density (concentration) between the film formed in the front row and the film formed in the back row. When the film formed in the front row and the film formed in the back row are formed as a continuous deposition region in the adjacent lateral direction, as a result, due to this non-uniformity of density (concentration), In the film formed by the front row portion and the rear row portion, the boundary is visually recognized due to a difference in chromaticity and luminance. As a result, in the light emitting device formed by co-evaporation by scanning vapor deposition, there is a problem that the boundary is visually recognized due to a small difference in luminance and chromaticity in the vapor deposition region that should be uniform. There has never been a deposition method that can prevent the problem accurately.

  The present invention has been made in view of the above circumstances, and in the manufacture of light-emitting devices for co-evaporation film formation by scanning vapor deposition, the spread angle of the vapor deposition particles is limited, and the film thickness distribution of the host assist dopant is determined in the substrate transport direction. In the same state, it is possible to achieve film formation in which the ratio of host-assist dopant is constant regardless of the position in the substrate transport direction. An object of the present invention is to provide an evaporation method and an evaporation apparatus capable of forming a simple pattern with good productivity.

The vapor deposition apparatus of the present invention includes a vapor deposition unit having a plurality of vapor deposition sources each having at least one vapor deposition source opening for co-vapor deposition with respect to the mask opening,
A moving mechanism for relatively moving one of the substrate and the vapor deposition unit along the first direction of the in-plane direction of the substrate with respect to the other;
With
The plurality of vapor deposition source openings are arranged as different positions from the upstream side in the first direction,
The plurality of vapor deposition source openings are provided with a restriction nozzle that restricts the directivity in the in-plane direction of the plurality of vapor deposition particles emitted from the plurality of vapor deposition source openings and directed to the substrate,
With respect to the vapor deposition region on the substrate to which the plurality of vapor deposition particles adhere when it is assumed that there is no vapor deposition mask, the vapor deposition region has at least a region where the plurality of vapor deposition particles overlap,
The vapor deposition particles in the first direction are reduced so that the restriction nozzle reduces a difference in density distribution in the vapor deposition particles in the vapor deposition region caused by the position of the restriction nozzle in the first direction. The above-mentioned problem has been solved by setting so as to limit directivity.
In the present invention, the plurality of vapor deposition sources include first, second, and third vapor deposition sources, and the first, second, and third vapor deposition sources include first, second, and third vapor deposition source openings. ,
The third, first, and second vapor deposition source openings are sequentially arranged as different positions from the upstream side to the downstream side in the first direction,
The first, second and third vapor deposition source openings respectively have the surfaces of the first, second and third vapor deposition particles emitted from the first, second and third vapor deposition source openings and directed to the substrate. First, second and third restriction nozzles are provided for restricting directivity in the inward direction;
When it is assumed that there is no vapor deposition mask, the regions on the substrate to which the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles adhere are defined as a first region, a second region, and a third region, respectively. ,
The first, second, and third vapor deposition source openings are controlled to tilt the emission directions of the second and third vapor deposition particles so that the first region, the second region, and the third region have overlapping portions. And
The second restricting nozzle tilts the discharge direction of the second vapor deposition particles toward the first restricting nozzle so that the second region overlaps the first region. The second vapor deposition particle density which increases on the first limiting nozzle side is reduced, and the difference in the second vapor deposition particle density in the second region in the first direction is reduced to reduce the distribution width. Limit the directivity to
The third restricting nozzle tilts the discharge direction of the third vapor deposition particles toward the first restricting nozzle so as to overlap the third region with the first region, so that the third region in the first direction The third vapor deposition particle density that increases on the first limiting nozzle side is reduced, and the difference in the third vapor deposition particle density in the third region in the first direction is reduced to reduce the width of the distribution. Limit the directivity to
The first restriction nozzle provided at the first vapor deposition source opening is directed to reduce a difference in the first vapor deposition particle distribution that decreases in the first region on the upstream side and the downstream side in the first direction. Limit sex,
In the first, second and third limiting nozzles, the first, second and third vapor deposition particle density distribution states in the first direction are made identical to each other. The above-mentioned problem was solved by setting the directivity of the three vapor deposition particles to be limited.
The limiting nozzle of the present invention is set to limit directivity in the first direction of the first to third vapor deposition particles so that the positions of the first to third regions in the first direction coincide with each other. It is preferable that
The present invention provides the first restriction nozzle provided in the first evaporation source opening, the second restriction nozzle provided in the second evaporation source opening, and the first restriction nozzle provided in the third evaporation source opening. All of the three restriction nozzles may be divided into a plurality of parts in the first direction.
The plurality of divided first to third restriction nozzles of the present invention may be non-uniformly arranged in the first direction.
In the limiting nozzle of the present invention, the limiting nozzle changes the size of the nozzle opening divided into a plurality by the second limiting nozzle at the position in the first direction, and in the second region, in the first direction. The directivity of the second vapor deposition particles is set so as to be restricted so as to correct the density distribution inclined toward the adjacent first vapor deposition source opening side, and the size of the nozzle opening divided into a plurality by the third restriction nozzle is set. The directivity of the third vapor deposition particles can be limited so as to correct the density distribution inclined at the first vapor deposition source opening side adjacent in the first direction in the third region by changing the position in the first direction. The size of the nozzle opening that is set and divided into a plurality by the first restriction nozzle is changed at the position in the first direction, and the first region is adjacent to the center in the first direction. The directivity of the first vapor deposition particles so as to correct the density distribution sloping second and third vapor deposition source opening side may be set to be restricted.
The vapor deposition method of the present invention is a vapor deposition method including a vapor deposition step of forming a film having a predetermined pattern by attaching vapor deposition particles on a substrate,
The said vapor deposition process can be performed using the vapor deposition apparatus in any one of said.
This invention performs the said vapor deposition process using the vapor deposition apparatus in any one of the above,
The coating may include a portion where the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles are mixed.
In the vapor deposition method of the present invention, the vapor deposition step is performed using any of the vapor deposition apparatuses described above,
In the coating, a mixing ratio of the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles may be constant in the first direction.
The film may be a light emitting layer of an organic EL element.

The vapor deposition apparatus of the present invention includes a vapor deposition unit having a plurality of vapor deposition sources each having at least one vapor deposition source opening for co-vapor deposition with respect to the mask opening,
A moving mechanism for relatively moving one of the substrate and the vapor deposition unit along the first direction of the in-plane direction of the substrate with respect to the other;
With
The plurality of vapor deposition source openings are arranged as different positions from the upstream side in the first direction,
The plurality of vapor deposition source openings are provided with a restriction nozzle that restricts the directivity in the in-plane direction of the plurality of vapor deposition particles emitted from the plurality of vapor deposition source openings and directed to the substrate,
With respect to the vapor deposition region on the substrate to which the plurality of vapor deposition particles adhere when it is assumed that there is no vapor deposition mask, the vapor deposition region has at least a region where the plurality of vapor deposition particles overlap,
The vapor deposition particles in the first direction are reduced so that the restriction nozzle reduces a difference in density distribution in the vapor deposition particles in the vapor deposition region caused by the position of the restriction nozzle in the first direction. By setting so as to limit directivity, when a plurality of types of vapor deposition particles reach the substrate and form a film by co-evaporation, the spread angle of each vapor deposition particle is limited, Avoiding the change in the vapor deposition particle distribution, making the film thickness distribution of the host assist dopant as each vapor deposition particle the same in the substrate transport direction, and the host assist dopant ratio in the substrate transport direction. It is possible to achieve film formation that is constant regardless of the position, and it is possible to eliminate the chromaticity / luminance difference at the boundary of the vapor deposition region in the light emitting device.

In the vapor deposition apparatus of the present invention, the plurality of vapor deposition sources include first, second and third vapor deposition sources, and the first, second and third vapor deposition sources are the first, second and third vapor deposition sources. With an opening,
The third, first, and second vapor deposition source openings are sequentially arranged as different positions from the upstream side to the downstream side in the first direction,
The first, second and third vapor deposition source openings respectively have the surfaces of the first, second and third vapor deposition particles emitted from the first, second and third vapor deposition source openings and directed to the substrate. First, second and third restriction nozzles are provided for restricting directivity in the inward direction;
When it is assumed that there is no vapor deposition mask, the regions on the substrate to which the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles adhere are defined as a first region, a second region, and a third region, respectively. ,
The first, second, and third vapor deposition source openings are controlled to tilt the emission directions of the second and third vapor deposition particles so that the first region, the second region, and the third region have overlapping portions. And
The second restricting nozzle tilts the discharge direction of the second vapor deposition particles toward the first restricting nozzle so that the second region overlaps the first region. The second vapor deposition particle density which increases on the first limiting nozzle side is reduced, and the difference in the second vapor deposition particle density in the second region in the first direction is reduced to reduce the distribution width. Limit the directivity to
The third restricting nozzle tilts the discharge direction of the third vapor deposition particles toward the first restricting nozzle so as to overlap the third region with the first region, so that the third region in the first direction The third vapor deposition particle density that increases on the first limiting nozzle side is reduced, and the difference in the third vapor deposition particle density in the third region in the first direction is reduced to reduce the width of the distribution. Limit the directivity to
The first restriction nozzle provided at the first vapor deposition source opening is directed to reduce a difference in the first vapor deposition particle distribution that decreases in the first region on the upstream side and the downstream side in the first direction. Limit sex,
In the first, second and third limiting nozzles, the first, second and third vapor deposition particle density distribution states in the first direction are made identical to each other. By setting the directivity of the three vapor deposition particles as being limitable, when the first to third vapor deposition particles reach the substrate and form a film by co-evaporation, the spread angle of each vapor deposition particle is limited, By avoiding the change in the distribution of each vapor deposition particle in the first direction, the film thickness distribution of the host assist dopant as the respective vapor deposition particles is made the same in the substrate transport direction, and these host assist dopants It is possible to realize film formation in which the ratio is constant regardless of the position in the substrate transport direction, and the difference in chromaticity / luminance at the vapor deposition region boundary in the light emitting device can be eliminated.

  The restriction nozzle of the present invention is set to restrict directivity of the first to third vapor deposition particles in the first direction so that positions in the first direction in the first to third regions coincide with each other. Thus, in the co-evaporation in which the first to third regions overlap at a position in the substrate plane, the directivity of each vapor deposition particle is limited, and the variation in the vapor deposition particle distribution in the first direction is reduced at a necessary portion. Therefore, it is possible to realize film formation in which the distribution is the same in the substrate transport direction.

  The present invention provides the first restriction nozzle provided in the first evaporation source opening, the second restriction nozzle provided in the second evaporation source opening, and the first restriction nozzle provided in the third evaporation source opening. The three restriction nozzles are all divided and arranged in the first direction, so that the distribution in the first direction is optimized for each vapor deposition particle emitted from each restriction nozzle. It is possible to realize film formation in the same state in the substrate transport direction.

  The plurality of divided first to third restriction nozzles of the present invention are non-uniformly arranged in the first direction, so that the distribution in the first direction for each vapor deposition particle is optimized, and the vapor deposition particle distribution Can be formed in the same state in the substrate transport direction.

  Specifically, in the setting in the second restriction nozzle provided in the second vapor deposition source opening, the second region is larger on the first vapor deposition source opening side than the center in the first direction. The nozzle shape is set so as to reduce the high density state of the second vapor deposition particles and flatten the density distribution of the second vapor deposition particles in the first direction in the second region.

  Similarly, in the setting in the third restriction nozzle provided in the third vapor deposition source opening, the third region is larger in the third region on the first vapor deposition source opening side than the center in the first direction. The nozzle shape is set so as to reduce the high density state of the vapor deposition particles and flatten the density distribution of the third vapor deposition particles in the first direction in the third region.

  In the setting in the first restriction nozzle provided in the first vapor deposition source opening, the density distribution of the second vapor deposition particles and the third vapor deposition particles set by the second restriction nozzle and the third restriction nozzle. Accordingly, in the first direction in the first region, a high-density state near the center where the number of vapor deposition particles is the largest with respect to the adjacent second vapor deposition source opening side and the third vapor deposition source opening side. The directivity of the first vapor deposition particles can be limited so that the density distribution of the first vapor deposition particles is flattened in the first direction in the first region.

  In the limiting nozzle of the present invention, the limiting nozzle changes the size of the nozzle opening divided into a plurality by the second limiting nozzle at the position in the first direction, and in the second region, in the first direction. The directivity of the second vapor deposition particles is set so as to be restricted so as to correct the density distribution inclined toward the adjacent first vapor deposition source opening side, and the size of the nozzle opening divided into a plurality by the third restriction nozzle is set. The directivity of the third vapor deposition particles can be limited so as to correct the density distribution inclined at the first vapor deposition source opening side adjacent in the first direction in the third region by changing the position in the first direction. The size of the nozzle opening that is set and divided into a plurality by the first restriction nozzle is changed at the position in the first direction, and the first region is adjacent to the center in the first direction. By optimizing the directivity of the first vapor deposition particles so as to correct the density distribution inclined toward the second and third vapor deposition source openings, the distribution in the first direction for each vapor deposition particle is optimized, It is possible to realize film formation in which the vapor deposition particle distribution is almost the same in the substrate transport direction.

  The vapor deposition method of the present invention is a vapor deposition method having a vapor deposition step of depositing vapor deposition particles on a substrate to form a film having a predetermined pattern, wherein the vapor deposition step is performed using any one of the vapor deposition apparatuses described above. Thus, when performing co-evaporation, which is multi-source vapor deposition, by scanning vapor deposition, when the first to third vapor deposition particles reach the substrate and form a film by co-evaporation, the spread angle of each vapor deposition particle is limited, By avoiding the change in the distribution of each vapor deposition particle in the first direction, the film thickness distribution of the host assist dopant as the respective vapor deposition particles is made the same in the substrate transport direction, and these host assist dopants It is possible to achieve film formation regardless of the film formation position so that the ratio is constant regardless of the mask opening position in the substrate transfer direction, It is possible to eliminate the time-luminance difference.

This invention performs the said vapor deposition process using the vapor deposition apparatus in any one of the above,
The coating includes a portion in which the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles are mixed, or the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles. Can be constant in the first direction, whereby ternary co-evaporation can be realized as a uniform concentration distribution in the first direction.

  According to the present invention, when vapor deposition particles reach the substrate and form a film by co-evaporation, the spread angle of each vapor deposition particle is limited, and each vapor deposition particle distribution in the first direction changes. By avoiding the film thickness distribution by the respective vapor deposition particles in the same state in the first direction, it is possible to realize film formation in which these ratios are constant regardless of the position in the substrate transport direction, and the boundary of the vapor deposition region in the light emitting device It is possible to achieve an effect that the chromaticity / brightness difference can be eliminated.

FIG. 1 is a cross-sectional view showing a schematic configuration of an organic EL display device. FIG. 2 is a plan view showing a configuration of a pixel constituting the organic EL display device shown in FIG. 3 is a cross-sectional view of the TFT substrate constituting the organic EL display device taken along line III-III in FIG. FIG. 4 is a flowchart showing the manufacturing process of the organic EL display device in the order of steps. FIG. 5 is a view along a plane passing through the vapor deposition source opening perpendicular to the traveling direction of the substrate of the vapor deposition apparatus according to the first embodiment of the present invention, and shows the substrate 10 in which the coating 90 is formed on the substrate 10. It is a front sectional view along a plane parallel to the moving direction 10a. 6 is a cross-sectional view showing a cross-sectional view of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. FIG. 7 is a plan view showing the vapor deposition mask opening of the vapor deposition apparatus shown in the plan view showing the vapor deposition mask opening of the vapor deposition apparatus shown in FIG. FIG. 8 is a graph showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 6, (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of the present embodiment, and (b) the present implementation. It is a graph which shows the normalized film thickness distribution in the board | substrate conveyance direction by the vapor deposition source opening of a form, (c) The normalized film thickness distribution in the board | substrate conveyance direction by the conventional vapor deposition source opening. FIG. 9 is a view along a plane passing through the vapor deposition source opening perpendicular to the traveling direction of the substrate of the vapor deposition apparatus according to the second embodiment of the present invention, and shows the state where the coating film 90 is formed on the substrate 10. It is a front sectional view along a plane parallel to the moving direction 10a. 10 is a cross-sectional view showing a cross-sectional view of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 11 is a plan view showing a vapor deposition mask opening of the vapor deposition apparatus shown in FIG. FIG. 12 is a graph showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 10, (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of the present embodiment, and (b) the present implementation. It is a graph which shows the normalized film thickness distribution in the board | substrate conveyance direction by the vapor deposition source opening of a form, (c) The normalized film thickness distribution in the board | substrate conveyance direction by the conventional vapor deposition source opening. FIG. 13: is front sectional drawing along the surface which passes along the vapor deposition source opening perpendicular | vertical to the running direction of the board | substrate of the vapor deposition apparatus concerning 3rd Embodiment of this invention. FIG. 14 is a plan view showing an evaporation source opening and a limiting nozzle of the evaporation apparatus shown in FIG. 15 is a plan view showing a vapor deposition mask opening of the vapor deposition apparatus shown in FIG. FIG. 16 is a graph showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 14, (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of the present embodiment, and (b) the present implementation. It is a graph which shows the normalized film thickness distribution in the board | substrate conveyance direction by the vapor deposition source opening of a form, (c) The normalized film thickness distribution in the board | substrate conveyance direction by the conventional vapor deposition source opening. FIG. 17 is a front sectional view showing another configuration example of the limiting nozzle of the vapor deposition apparatus in the present invention.

Hereinafter, a vapor deposition method and a vapor deposition apparatus according to a first embodiment of the present invention will be described with reference to the drawings.
However, it goes without saying that the present invention is not limited to the following embodiments. For convenience of explanation, the drawings referred to in the following description show only the main members necessary for explaining the present invention in a simplified manner among the constituent members of the embodiment of the present invention. Therefore, the present invention can include arbitrary components not shown in the following drawings. In addition, the dimensions of the members in the following drawings do not faithfully represent the actual dimensions of the constituent members and the dimensional ratios of the members.

(Configuration of organic EL display device)
An example of an organic EL display device that can be manufactured by applying the present invention will be described. The organic EL display device of this example is a bottom emission type in which light is extracted from the TFT substrate side, and controls light emission of pixels (sub-pixels) composed of red (R), green (G), and blue (B) colors. This is an organic EL display device that performs full-color image display.

  First, the overall configuration of the organic EL display device will be described below.

  FIG. 1 is a cross-sectional view showing a schematic configuration of an organic EL display device. FIG. 2 is a plan view showing a configuration of a pixel constituting the organic EL display device shown in FIG. 3 is a cross-sectional view of the TFT substrate constituting the organic EL display device taken along line III-III in FIG.

  As shown in FIG. 1, the organic EL display device 1 includes an organic EL element 20, an adhesive layer 30, and a sealing substrate 40 connected to a TFT 12 on a TFT substrate 10 on which a TFT 12 (see FIG. 3) is provided. It has the structure provided in order. The center of the organic EL display device 1 is a display area 19 for displaying an image, and an organic EL element 20 is disposed in the display area 19.

  The organic EL element 20 is sealed between the pair of substrates 10 and 40 by bonding the TFT substrate 10 on which the organic EL element 20 is laminated to the sealing substrate 40 using the adhesive layer 30. As described above, since the organic EL element 20 is sealed between the TFT substrate 10 and the sealing substrate 40, entry of oxygen and moisture into the organic EL element 20 from the outside is prevented.

  As shown in FIG. 3, the TFT substrate 10 includes a transparent insulating substrate 11 such as a glass substrate as a support substrate. However, in the top emission type organic EL display device, the insulating substrate 11 does not need to be transparent.

  On the insulating substrate 11, as shown in FIG. 2, a plurality of wirings 14 including a plurality of gate lines laid in the horizontal direction and a plurality of signal lines laid in the vertical direction and intersecting the gate lines are provided. It has been. A gate line driving circuit (not shown) for driving the gate line is connected to the gate line, and a signal line driving circuit (not shown) for driving the signal line is connected to the signal line. On the insulating substrate 11, sub-pixels 2R, 2G, and 2B made of organic EL elements 20 of red (R), green (G), and blue (B) colors are provided in each region surrounded by the wirings 14, respectively. They are arranged in a matrix.

  The sub pixel 2R emits red light, the sub pixel 2G emits green light, and the sub pixel 2B emits blue light. Sub-pixels of the same color are arranged in the column direction (vertical direction in FIG. 2), and repeating units composed of sub-pixels 2R, 2G, and 2B are repeatedly arranged in the row direction (left-right direction in FIG. 2). The sub-pixels 2R, 2G, and 2B constituting the repeating unit in the row direction constitute the pixel 2 (that is, one pixel).

  Each sub-pixel 2R, 2G, 2B includes a light-emitting layer 23R, 23G, 23B responsible for light emission of each color. The light emitting layers 23R, 23G, and 23B extend in a stripe shape in the column direction (vertical direction in FIG. 2).

  The configuration of the TFT substrate 10 will be described.

  As shown in FIG. 3, the TFT substrate 10 is formed on a transparent insulating substrate 11 such as a glass substrate, a TFT 12 (switching element), a wiring 14, an interlayer film 13 (interlayer insulating film, planarizing film), an edge cover 15, and the like. Is provided.

  The TFT 12 functions as a switching element that controls the light emission of the sub-pixels 2R, 2G, and 2B, and is provided for each of the sub-pixels 2R, 2G, and 2B. The TFT 12 is connected to the wiring 14.

  The interlayer film 13 also functions as a planarizing film, and is laminated on the entire surface of the display region 19 on the insulating substrate 11 so as to cover the TFT 12 and the wiring 14.

  A first electrode 21 is formed on the interlayer film 13. The first electrode 21 is electrically connected to the TFT 12 through a contact hole 13 a formed in the interlayer film 13.

  The edge cover 15 is formed on the interlayer film 13 so as to cover the pattern end of the first electrode 21. The edge cover 15 has a short circuit between the first electrode 21 and the second electrode 26 constituting the organic EL element 20 because the organic EL layer 27 is thinned or electric field concentration occurs at the pattern end of the first electrode 21. This is an insulating layer for preventing this.

  The edge cover 15 is provided with openings 15R, 15G, and 15B for each of the sub-pixels 2R, 2G, and 2B. The openings 15R, 15G, and 15B of the edge cover 15 serve as light emitting areas of the sub-pixels 2R, 2G, and 2B. In other words, each of the sub-pixels 2R, 2G, 2B is partitioned by the edge cover 15 having an insulating property. The edge cover 15 also functions as an element isolation film.

  The organic EL element 20 will be described.

  The organic EL element 20 is a light emitting element that can emit light with high luminance by low-voltage direct current drive, and includes a first electrode 21, an organic EL layer 27, and a second electrode 26 in this order.

  The first electrode 21 is a layer having a function of injecting (supplying) holes into the organic EL layer 27. As described above, the first electrode 21 is connected to the TFT 12 via the contact hole 13a.

  As shown in FIG. 3, the organic EL layer 27 includes a hole injection layer / hole transport layer 22, light emitting layers 23 </ b> R, 23 </ b> G, between the first electrode 21 and the second electrode 26 from the first electrode 21 side. 23B, the electron transport layer 24, and the electron injection layer 25 are provided in this order.

  In this embodiment, the first electrode 21 is an anode and the second electrode 26 is a cathode. However, the first electrode 21 may be a cathode and the second electrode 26 may be an anode. In this case, the organic EL layer 27 is configured. The order of each layer is reversed.

  The hole injection layer / hole transport layer 22 has both a function as a hole injection layer and a function as a hole transport layer. The hole injection layer is a layer having a function of increasing hole injection efficiency into the organic EL layer 27. The hole transport layer is a layer having a function of improving the efficiency of transporting holes to the light emitting layers 23R, 23G, and 23B. The hole injection layer / hole transport layer 22 is uniformly formed on the entire surface of the display region 19 in the TFT substrate 10 so as to cover the first electrode 21 and the edge cover 15.

  In this embodiment, the hole injection layer / hole transport layer 22 in which the hole injection layer and the hole transport layer are integrated is provided. However, the present invention is not limited to this, and The hole transport layer may be formed as a layer independent of each other.

  On the hole injection layer / hole transport layer 22, the light emitting layers 23R, 23G, and 23B correspond to the columns of the sub-pixels 2R, 2G, and 2B so as to cover the openings 15R, 15G, and 15B of the edge cover 15, respectively. Is formed. The light emitting layers 23R, 23G, and 23B are layers having a function of emitting light by recombining holes injected from the first electrode 21 side and electrons injected from the second electrode 26 side. . Each of the light emitting layers 23R, 23G, and 23B includes a material having high light emission efficiency such as a low molecular fluorescent dye or a metal complex.

  The electron transport layer 24 is a layer having a function of increasing the electron transport efficiency from the second electrode 26 to the light emitting layers 23R, 23G, and 23B.

  The electron injection layer 25 is a layer having a function of increasing the efficiency of electron injection from the second electrode 26 to the organic EL layer 27.

  The electron transport layer 24 is formed on the light emitting layers 23R, 23G, 23B and the hole injection / hole transport layer 22 so as to cover the light emitting layers 23R, 23G, 23B and the hole injection / hole transport layer 22. It is uniformly formed over the entire surface of the display area 19 in the substrate 10. The electron injection layer 25 is uniformly formed on the entire surface of the display region 19 in the TFT substrate 10 on the electron transport layer 24 so as to cover the electron transport layer 24.

  In the present embodiment, the electron transport layer 24 and the electron injection layer 25 are provided as independent layers. However, the present invention is not limited to this, and a single layer in which both are integrated (that is, an electron) It may be provided as a transport layer / electron injection layer).

  The second electrode 26 is a layer having a function of injecting electrons into the organic EL layer 27. The second electrode 26 is formed uniformly over the entire surface of the display region 19 in the TFT substrate 10 on the electron injection layer 25 so as to cover the electron injection layer 25.

  Note that organic layers other than the light emitting layers 23R, 23G, and 23B are not essential as the organic EL layer 27, and may be selected according to the required characteristics of the organic EL element 20. Moreover, the organic EL layer 27 may further include a carrier blocking layer as necessary. For example, by adding a hole blocking layer as a carrier blocking layer between the light emitting layers 23R, 23G, and 23B and the electron transport layer 24, holes are prevented from passing through the electron transport layer 24, and the light emission efficiency is improved. can do.

(Method for manufacturing organic EL display device)
Next, a method for manufacturing the organic EL display device 1 will be described below.

  FIG. 4 is a flowchart showing manufacturing steps of the organic EL display device 1 in the order of steps.

  As shown in FIG. 4, the manufacturing method of the organic EL display device 1 according to the present embodiment includes, for example, a TFT substrate / first electrode manufacturing step S1, a hole injection layer / hole transport layer forming step S2, and light emission. A layer forming step S3, an electron transporting layer forming step S4, an electron injecting layer forming step S5, a second electrode forming step S6, and a sealing step S7 are provided in this order.

  Below, each process of FIG. 4 is demonstrated. However, the dimensions, materials, shapes, and the like of the components shown below are merely examples, and the present invention is not limited to these. In the present embodiment, the first electrode 21 is an anode and the second electrode 26 is a cathode. Conversely, when the first electrode 21 is a cathode and the second electrode 26 is an anode, the organic EL The order of layer stacking is reversed from the description below. Similarly, the materials constituting the first electrode 21 and the second electrode 26 are also reversed from the following description.

  First, the TFT 12 and the wiring 14 are formed on the insulating substrate 11 by a known method. As the insulating substrate 11, for example, a transparent glass substrate or a plastic substrate can be used. As an example of the insulating substrate 11, a rectangular glass plate having a thickness of about 1 mm and a vertical and horizontal dimension of 500 × 400 mm can be used.

  Next, a photosensitive resin is applied on the insulating substrate 11 so as to cover the TFT 12 and the wiring 14, and patterning is performed by a photolithography technique, thereby forming the interlayer film 13. As a material of the interlayer film 13, for example, an insulating material such as an acrylic resin or a polyimide resin can be used. However, the polyimide resin is generally not transparent but colored. For this reason, when the bottom emission type organic EL display device 1 as shown in FIG. 3 is manufactured, it is preferable to use a transparent resin such as an acrylic resin as the interlayer film 13. The thickness of the interlayer film 13 is not particularly limited as long as the step on the upper surface of the TFT 12 can be eliminated. In one embodiment, the interlayer film 13 having a thickness of about 2 μm can be formed using an acrylic resin.

  Next, a contact hole 13 a for electrically connecting the first electrode 21 to the TFT 12 is formed in the interlayer film 13.

  Next, the first electrode 21 is formed on the interlayer film 13. That is, a conductive film (electrode film) is formed on the interlayer film 13. Next, after applying a photoresist on the conductive film and performing patterning using a photolithography technique, the conductive film is etched using ferric chloride as an etchant. Thereafter, the photoresist is stripped using a resist stripping solution, and substrate cleaning is further performed. Thereby, a matrix-like first electrode 21 is obtained on the interlayer film 13.

  As the conductive film material used for the first electrode 21, transparent conductive materials such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), gallium-doped zinc oxide (GZO), Metal materials such as gold (Au), nickel (Ni), and platinum (Pt) can be used.

  As a method for stacking the conductive films, a sputtering method, a vacuum deposition method, a CVD (chemical vapor deposition) method, a plasma CVD method, a printing method, or the like can be used. The first electrode 21 having a thickness of about 100 nm can be formed by sputtering using ITO as an example.

  Next, the edge cover 15 having a predetermined pattern is formed. The edge cover 15 can use, for example, the same insulating material as that of the interlayer film 13 and can be patterned by the same method as that of the interlayer film 13. In one embodiment, the edge cover 15 having a thickness of about 1 μm can be formed using acrylic resin.

  As described above, the TFT substrate 10 and the first electrode 21 are manufactured (step S1).

  Next, the TFT substrate 10 that has undergone step S <b> 1 is baked under reduced pressure for dehydration, and further subjected to oxygen plasma treatment for cleaning the surface of the first electrode 21.

  Next, a hole injection layer and a hole transport layer (in this embodiment, a hole injection layer / hole transport layer 22) are formed on the entire surface of the display region 19 of the TFT substrate 10 on the TFT substrate 10 by vapor deposition. (S2).

  Specifically, an open mask having the entire display area 19 opened is closely fixed to the TFT substrate 10 and the TFT substrate 10 and the open mask are rotated together. The material of the transport layer is deposited on the entire surface of the display area 19 of the TFT substrate 10.

  The hole injection layer and the hole transport layer may be integrated as described above, or may be layers independent of each other. The thickness of the layer is, for example, 10 to 100 nm per layer.

  Examples of the material for the hole injection layer and the hole transport layer include benzine, styrylamine, triphenylamine, porphyrin, triazole, imidazole, oxadiazole, polyarylalkane, phenylenediamine, arylamine, oxazole, anthracene, and fluorenone. , Hydrazone, stilbene, triphenylene, azatriphenylene, and derivatives thereof, polysilane compounds, vinylcarbazole compounds, thiophene compounds, aniline compounds, etc., heterocyclic or chain conjugated monomers, oligomers, or polymers Etc.

  In one embodiment, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (α-NPD) is used to form a hole injection layer / hole transport layer 22 having a thickness of 30 nm. Can be formed.

  Next, light emitting layers 23R, 23G, and 23B are formed in a stripe shape on the hole injection / hole transport layer 22 so as to cover the openings 15R, 15G, and 15B of the edge cover 15 (S3). The light emitting layers 23R, 23G, and 23B are vapor-deposited so that a predetermined region is separately applied for each color of red, green, and blue (separate vapor deposition).

  As the material of the light emitting layers 23R, 23G, and 23B, a material having high light emission efficiency such as a low molecular fluorescent dye or a metal complex is used. For example, anthracene, naphthalene, indene, phenanthrene, pyrene, naphthacene, triphenylene, anthracene, perylene, picene, fluoranthene, acephenanthrylene, pentaphen, pentacene, coronene, butadiene, coumarin, acridine, stilbene, and their derivatives, tris ( 8-quinolinolato) aluminum complex, bis (benzoquinolinolato) beryllium complex, tri (dibenzoylmethyl) phenanthroline europium complex, ditoluylvinylbiphenyl and the like.

  The light emitting layers 23R, 23G, and 23B may be composed only of the above-described organic light emitting materials, and include a hole transport layer material, an electron transport layer material, an additive (donor, acceptor, etc.), a light emitting dopant, and the like. You may go out. Moreover, the structure which disperse | distributed these materials in the polymeric material (binding resin) and the inorganic material may be sufficient. From the viewpoint of improving luminous efficiency and extending the lifetime, it is preferable that a luminescent dopant is dispersed in the host.

  There is no restriction | limiting in particular as a luminescent dopant, A well-known dopant material can be used. For example, 4,4′-bis (2,2′-diphenylvinyl) -biphenyl (DPVBi), 4,4′-bis [2- {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) ) Aromatic dimethylidene derivatives, styryl derivatives, perylene, iridium complexes, coumarin derivatives such as coumarin 6, lumogen F red, dicyanomethylenepyran, phenoxazone, porphyrin derivatives and the like. By appropriately selecting the type of dopant, a red light emitting layer 23R that emits red light, a green light emitting layer 23G that emits green light, and a blue light emitting layer 23B that emits blue light are obtained.

  Examples of the host material that is a dispersion medium of the light-emitting dopant include the same material as the material forming the light-emitting layers 23R, 23G, and 23B, a carbazole derivative, and the like.

  In the case of forming a light emitting layer in which a dopant is dispersed in a host, the content of the dopant with respect to the host is not particularly limited and can be appropriately changed according to each material, but is generally about several to 30%. Is preferred.

  The thickness of the light emitting layers 23R, 23G, and 23B can be set to, for example, 10 to 100 nm.

  The vapor deposition method and vapor deposition apparatus of the present invention can be used particularly suitably for the separate vapor deposition of the light emitting layers 23R, 23G, and 23B. Details of the method of forming the light emitting layers 23R, 23G, and 23B using the present invention will be described later.

  Next, an electron transport layer 24 is formed on the entire surface of the display region 19 of the TFT substrate 10 by vapor deposition so as to cover the hole injection layer / hole transport layer 22 and the light emitting layers 23R, 23G, and 23B (S4). The electron transport layer 24 can be formed by the same method as in the hole injection layer / hole transport layer forming step S2.

  Next, an electron injection layer 25 is formed on the entire surface of the display region 19 of the TFT substrate 10 by vapor deposition so as to cover the electron transport layer 24 (S5). The electron injection layer 25 can be formed by the same method as in the hole injection layer / hole transport layer forming step S2.

  Examples of the material for the electron transport layer 24 and the electron injection layer 25 include quinoline, perylene, phenanthroline, bisstyryl, pyrazine, triazole, oxazole, oxadiazole, fluorenone, and derivatives and metal complexes thereof, LiF (lithium fluoride). Etc. can be used.

  As described above, the electron transport layer 24 and the electron injection layer 25 may be formed as an integrated single layer or may be formed as independent layers. The thickness of each layer is, for example, 1 to 100 nm. The total thickness of the electron transport layer 24 and the electron injection layer 25 is, for example, 20 to 200 nm.

  In one embodiment, Alq (tris (8-hydroxyquinoline) aluminum) is used to form a 30 nm thick electron transport layer 24, and LiF (lithium fluoride) is used to form a 1 nm thick electron injection layer 25. Can be formed.

  Next, the second electrode 26 is formed on the entire surface of the display area 19 of the TFT substrate 10 so as to cover the electron injection layer 25 (S6). The second electrode 26 can be formed by the same method as in the hole injection layer / hole transport layer forming step S2 described above. As a material (electrode material) of the second electrode 26, a metal having a small work function is preferably used. Examples of such electrode materials include magnesium alloys (MgAg, etc.), aluminum alloys (AlLi, AlCa, AlMg, etc.), metallic calcium, and the like. The thickness of the second electrode 26 is, for example, 50 to 100 nm. In one embodiment, the second electrode 26 having a thickness of 50 nm can be formed using aluminum.

  A protective film may be further provided on the second electrode 26 so as to cover the second electrode 26 and prevent oxygen and moisture from entering the organic EL element 20 from the outside. As a material for the protective film, an insulating or conductive material can be used, and examples thereof include silicon nitride and silicon oxide. The thickness of the protective film is, for example, 100 to 1000 nm.

  As described above, the organic EL element 20 including the first electrode 21, the organic EL layer 27, and the second electrode 26 can be formed on the TFT substrate 10.

  Next, as shown in FIG. 1, the TFT substrate 10 on which the organic EL element 20 is formed and the sealing substrate 40 are bonded together with an adhesive layer 30 to encapsulate the organic EL element 20. As the sealing substrate 40, for example, an insulating substrate such as a glass substrate or a plastic substrate having a thickness of 0.4 to 1.1 mm can be used. Thus, the organic EL display device 1 is obtained.

  In such an organic EL display device 1, when the TFT 12 is turned on by signal input from the wiring 14, holes are injected from the first electrode 21 into the organic EL layer 27. On the other hand, electrons are injected from the second electrode 26 into the organic EL layer 27. Holes and electrons recombine in the light emitting layers 23R, 23G, and 23B, and emit light of a predetermined color when energy is deactivated. A predetermined image can be displayed in the display area 19 by controlling the light emission luminance of each of the sub-pixels 2R, 2G, and 2B.

  Below, process S3 which forms the light emitting layers 23R, 23G, and 23B by separate vapor deposition will be described.

<Embodiment 1>
FIG. 5 is a view along a plane passing through the vapor deposition source opening perpendicular to the traveling direction of the substrate of the vapor deposition apparatus according to the present embodiment, and shows the movement direction 10a of the substrate 10 showing a state in which the film 90 is formed on the substrate 10. 6 is a cross-sectional view showing a vapor deposition source opening cross-sectional view of the vapor deposition apparatus shown in FIG. 5, and FIG. 7 is a vapor deposition mask opening of the vapor deposition apparatus shown in FIG. FIG. 8 is a graph showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 6, and (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of this embodiment, (b FIG. 4 is a graph showing a normalized film thickness distribution in the substrate conveyance direction by the vapor deposition source opening of the present embodiment, and (c) a normalized film thickness distribution in the substrate conveyance direction by the conventional vapor deposition source opening.

The vapor deposition apparatus according to this embodiment uses a vapor deposition mask having a size smaller than that of the deposition target substrate (substrate), and performs vapor deposition while scanning the substrate, the mask unit, and the vapor deposition source 60 while moving relative to each other. Used for vapor deposition (scan vapor deposition) using a scanning method.
In this embodiment, the scanning direction and the direction parallel to the scanning direction (first direction) are defined as the Y direction (Y axis direction), and the direction perpendicular to the scanning direction (second direction) is defined as the X direction (X axis). Direction).

  The vapor deposition apparatus according to the present embodiment includes a vacuum chamber (film formation chamber), a substrate holder as a substrate holding member that holds the film formation substrate 10, a substrate movement mechanism (movement mechanism) that moves the film formation substrate 10, A vapor deposition unit including a vapor deposition source 60, alignment observation means such as an image sensor, a control circuit, and the like are provided.

  The vapor deposition source 60 and the vapor deposition mask 70 constitute a vapor deposition unit. The substrate 10 moves relative to the vapor deposition mask 70 on the opposite side of the vapor deposition source 60 along the arrow 10a at a constant speed. For convenience of the following description, the horizontal axis parallel to the moving direction (first direction) 10a of the substrate 10 is the Y axis, and the in-plane direction axis perpendicular to the Y axis is the X axis, the X axis and the Y axis are perpendicular An XYZ orthogonal coordinate system is set with the substrate normal direction axis as the Z axis. For convenience of explanation, the arrow side in the Z-axis direction is referred to as “upper side”.

  The vapor deposition source 60 includes a first vapor deposition source 60a and a second vapor deposition source 60b. The first vapor deposition source 60a and the second vapor deposition source 60b respectively include a plurality of first vapor deposition source openings 61a and a plurality of second vapor deposition source openings 61b on the upper surfaces (that is, the surfaces facing the vapor deposition mask 70). The plurality of first vapor deposition source openings 61a and the plurality of second vapor deposition source openings 61b are arranged at different positions in the Y-axis direction, and are arranged at a constant pitch along straight lines parallel to the X-axis direction. The plurality of first vapor deposition source openings 61a and the plurality of second vapor deposition source openings 61b are arranged at the same position in the X-axis direction, and as shown in FIG. C, the Y-direction column 61A, the column 61B, the column 61C, A column 61D, a column 61E, and a column 61F are formed. Each of the vapor deposition source openings 61a and 61b has a nozzle shape opened upward along the Z axis.

  The first vapor deposition source opening 61a and the second vapor deposition source opening 61b are directed toward the vapor deposition mask 70 with the vapor of the first material (that is, the first vapor deposition particles 91a) and the vapor of the second material (that is, the material of the light emitting layer). , The second vapor deposition particles 91b) are discharged. For example, the host vapor (first vapor deposition particles 91a) constituting the light emitting layer is emitted from the first vapor deposition source opening 61a of the first vapor deposition source 60a, and light is emitted from the second vapor deposition source opening 61b of the second vapor deposition source 60b. The vapor of the dopant constituting the layer (second vapor deposition particles 91b) can be released.

  The vapor deposition mask 70 is a plate-like object whose main surface (surface having the maximum area) is parallel to the XY plane, and a plurality of mask openings 71a are intermittently provided at different positions in the X-axis direction along the X-axis direction. In addition to being formed, a plurality of mask openings 71b are formed intermittently at different positions in the X-axis direction, alternately with the plurality of mask openings 71a. The mask openings 71a and 71b are through holes that penetrate the vapor deposition mask 70 in the Z-axis direction.

  A plurality of mask openings 71a are provided so as to be at the same position in the X direction, and a plurality of mask openings 71b are provided so as to be at the same position in the X direction. The plurality of mask openings 71a and the mask openings 71b are arranged at different Y-direction positions, and the plurality of mask openings 71a form a rear row, and the plurality of mask openings 71b form a front row. As shown in FIG. 7, the mask openings 71a are the positions of the columns 71A, 71C, and 71E in the Y direction, and the mask openings 71b are the positions of the columns 71B, 71D, and 71F.

  In the plurality of first vapor deposition source openings 61a, the plurality of second vapor deposition source openings 61b, and the plurality of mask openings 71a and 71b, the row 61A and the mask openings of the vapor deposition source openings 61a and 61b in the Y direction during the vapor deposition process. It is set so that the row 71A of 71a overlaps in plan view. Similarly, the row 61B of the vapor deposition source openings 61a and 61b and the row 71B of the mask opening 71b in the Y direction are set to overlap in plan view, and the row 61C of the vapor deposition source openings 61a and 61b and the row of the mask opening 71a in the Y direction. 71C is set so as to overlap in plan view, and the column 61D of vapor deposition source openings 61a, 61b in the Y direction and the column 71D of mask opening 71b are set so as to overlap in plan view, and the vapor deposition source openings 61a, 61b in the Y direction are overlapped. The column 61E and the column 71E of the mask opening 71a are set to overlap in plan view, and the column 61F of the vapor deposition source openings 61a and 61b and the column 71F of the mask opening 71b in the Y direction are set to overlap in plan view.

  In this embodiment, each of the mask openings 71a and 71b has a slit shape parallel to the Y axis corresponding to the pixel pitch as shown in the row 71A of FIG. Is not limited to this, and may be, for example, a slot shape. In FIG. 7, the slit shape corresponding to the picture element pitch of the mask openings 71a and 71b in rows other than the row 71A is not shown. The shape and dimensions of all the mask openings may be the same or different. The pitch of the mask openings in the X-axis direction may be constant or different. The Y direction region of the mask opening 71a is indicated by AA ', and the Y direction region of the mask opening 71b is indicated by BB'.

  Furthermore, in the present invention, as shown in FIG. 5, a limiting plate unit 80 for limiting the direction in which the first and second vapor deposition particles 91a and 91b are emitted may be provided on the upper side of the vapor deposition source 60. it can. In this case, a vapor deposition unit is comprised by the vapor deposition source 60, the vapor deposition mask 70, and the limiting plate unit 80 arrange | positioned among these.

  Here, in the limiting plate unit 80, the emitted vapor deposition particles 91a and 91b fly to the plurality of first vapor deposition source openings 61a and the plurality of second vapor deposition source openings 61b in the respective rows 61A to 61F. Through-holes (restriction openings) 81a and 81b serving as restriction openings for restricting the directivity to be performed in the vicinity of the Z-axis direction are provided at corresponding positions. The vapor deposition particles 91a and 91b whose directivity is restricted by the through holes 81a and 81b can restrict directivity so as to reach the first region 92a and the second region 92b on the substrate 10, respectively. Here, by disposing a limiting plate, only an arbitrary region is allowed to pass, and this is one that does not allow vapor deposition particles to adhere to other than the arbitrary region, and specifically, for example, is emitted from the vapor deposition source opening 61A. The deposited particles are not attached to 71B or 71C other than the mask opening 71A.

  The plurality of vapor deposition source openings 61a and 61b and the vapor deposition mask 70 are separated from each other in the Z-axis direction. It is preferable that the relative positions of the vapor deposition sources 61a and 61b and the vapor deposition mask 70 be substantially constant at least during the period of performing separate vapor deposition.

  The substrate 10 is held by the holding device 55. As the holding device 55, for example, an electrostatic chuck that holds the surface of the substrate 10 opposite to the deposition surface 10e with electrostatic force can be used. Thereby, the board | substrate 10 can be hold | maintained in the state which does not have the bending | flexion by the dead weight of the board | substrate 10 substantially. However, the holding device 55 for holding the substrate 10 is not limited to the electrostatic chuck, and may be other devices.

  The substrate 10 held by the holding device 55 is parallel to the Y axis at a constant speed by the moving mechanism 56 while the opposite side of the vapor deposition source 60 from the vapor deposition mask 70 is separated from the vapor deposition mask 70 by a certain distance. Scanning (moving) along the moving direction 10a. The movement of the substrate 10 may be a reciprocating movement, or may be a unidirectional movement toward only one of them. The configuration of the moving mechanism 56 is not particularly limited. For example, a known transport driving mechanism such as a feed screw mechanism that rotates a feed screw with a motor or a linear motor can be used. The scanning speed may not be constant, and may be changed according to the deposition rate, for example.

  The vapor deposition unit, the substrate 10, the holding device 55 that holds the substrate 10, and the moving mechanism 56 that moves the substrate 10 are accommodated in a vacuum chamber. The vacuum chamber is a sealed container, and its internal space is decompressed and maintained in a predetermined low pressure state.

  In the column 61A, the first vapor deposition particles 91a emitted from the first vapor deposition source openings 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source openings 61b are both subsequent to the column 71A in the vapor deposition mask 70. It passes through the mask opening 71a.

  In the row 61B, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b are both in the front row of the row 71B in the vapor deposition mask 70. It passes through the mask opening 71b.

  In the column 61C, the first vapor deposition particles 91a emitted from the first vapor deposition source openings 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source openings 61b are both subsequent to the column 71C in the vapor deposition mask 70. It passes through the mask opening 71a.

  In the column 61D, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b are both in the front row of the column 71D in the vapor deposition mask 70. It passes through the mask opening 71b.

  In the column 61E, the first vapor deposition particles 91a emitted from the first vapor deposition source openings 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source openings 61b are both subsequent to the column 71E in the vapor deposition mask 70. It passes through the mask opening 71a.

  In the row 61F, the first vapor deposition particles 91a emitted from the first vapor deposition source openings 61a and the second vapor deposition particles 91b emitted from the second vapor deposition source openings 61b are both in the front row of the row 71F in the vapor deposition mask 70. It passes through the mask opening 71b.

  The first and second vapor deposition particles 91a and 91b that have passed through the mask opening 71a or the mask opening 71b are vapor deposition surfaces of the substrate 10 traveling in the Y-axis direction (that is, the surfaces of the substrate 10 facing the vapor deposition mask 70). A film 90 in which the first and second vapor deposition particles 91a and 91b are mixed is formed by adhering to 10e. The coating 90 has a stripe shape corresponding to the pixel pitch extending in the Y-axis direction corresponding to the mask opening 71a or the mask opening 71b.

  As described above, when the material of the first vapor-deposited particles 91a is a host and the material of the second vapor-deposited particles 91b is a dopant, the coating film 90 in which the dopant is dispersedly contained in the host can be formed.

  By performing at least one of the materials of the first vapor deposition particles 91a and the second vapor deposition particles 91b for each color of red, green, and blue and performing vapor deposition three times (separate vapor deposition), Striped films 90 (that is, light emitting layers 23R, 23G, and 23B) corresponding to red, green, and blue colors can be formed on the vapor deposition surface 10e.

  In the present embodiment, the first vapor deposition source opening 61a and the second vapor deposition source opening 61b are provided with first and second restriction nozzles, respectively, and the thickness distribution of the host dopant is the same in the transport direction 10a. Distribution is possible.

  In the present embodiment, the region on the substrate 10 to which the first vapor deposition particles 91a restricted in directivity by the restriction plate unit 80 adhere is defined as the first region 92a, and the second vapor deposition in which directivity is restricted by the restriction plate unit 80. When the region on the substrate 10 to which the particles 91b adhere is the second region 92b, the position of the first region 92a in the Y-axis direction and the position of the second region 92b in the Y-axis direction substantially coincide.

  In other words, the relative positions (distance, angle, etc.) of the first and second vapor deposition source openings 61a and 61b, the limiting plate unit 80, and the substrate 10 so that the first region 92a and the second region 92b substantially coincide. Is set. Each of the mask openings 71a and 71b is formed in a region on the vapor deposition mask 70 corresponding to a region where the first and second vapor deposition particles 91a and 91b overlap each other. Preferably, all of the mask openings 71a and 71b are formed in a region on the vapor deposition mask 70 corresponding to a region where the first and second vapor deposition source openings 61a and 61b overlap. In FIG. 7, at the position of the vapor deposition mask 70, the first region 92 a and the second region 92 b which are regions on the substrate 10 corresponding to the respective mask openings 71 a and 71 b and the first vapor deposition source opening 61 a and the second vapor deposition source opening 61 b. Shows the relationship.

  As shown in FIG. 8C, the first and second vapor-deposited particles 91a and 91b in the case where there is no restriction nozzle, as shown in FIG. 8 (c), have a certain spread (directivity) in the X-axis direction and the Y-axis direction, respectively. 2Emitted from the vapor deposition source openings 61a and 61b. In this case, both the first vapor deposition source opening 61a and the second vapor deposition source opening 61b are opened in the direction parallel to the Z axis.

  The number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a is the largest at the center in the opening direction (Z-axis direction in this example) of the first vapor deposition source opening 61a when there is no restriction nozzle. The angle gradually decreases as the angle formed with respect to the direction (outgoing angle) increases. That is, the first vapor deposition particles 91a have a peak at a position immediately above the first vapor deposition source opening 61a, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  The number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b is the largest at the center in the opening direction (Z-axis direction in this example) of the second vapor deposition source opening 61b when there is no restriction nozzle. The angle gradually decreases as the angle formed with respect to the direction (outgoing angle) increases. That is, the second vapor deposition particles 91b have a peak at a position immediately above the second vapor deposition source opening 61b, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  Thus, the distribution of the second vapor deposition particles 91b is inverted in the Y direction (conveyance direction), and the difference in magnitude is larger than the distribution of the first vapor deposition particles 91a.

  Corresponding to correct the deviation of the distribution in the first and second vapor deposition particles 91a and 91b, in the present embodiment, as shown in FIG. 6, the first vapor deposition source opening 61a has a Y direction in the first vapor deposition source opening 61a. The first limiting nozzles 61a1, 61a2, 61a3, 61a4, 61a5 divided into five locations in 10a are provided, and the second limiting nozzle 61b1, divided into five locations in the Y direction 10a, is provided in the second deposition source opening 61b. 61b2, 61b3, 61b4, 61b5 are provided.

  In the second vapor deposition source opening 61b, as shown in FIG. 8C, the number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b when there is no restriction nozzle is AB in the Y direction 10a. The distribution is balanced by correcting the state where the front side in the conveyance direction becomes higher than the center between 'and the profile between AB' in the Y direction 10a becomes as equal as possible as shown in FIG. 8 (a). In this way, the number distribution of the second vapor deposition particles 91b to be discharged is set. That is, the second vapor deposition source opening 61b has a second vapor deposition particle 91b number distribution normalized by the number distribution of the first vapor deposition particles 91a between AB ′ in the Y direction 10a as shown in FIG. It is set to be uniform between AB ′.

  Specifically, as shown in FIG. 6, the opening section inclination angle θb5 in the second restricting nozzle 61b5 located on the front side in the transport direction is set to be the smallest, and the opening section inclination angle increases toward the rear side in the transport direction. It is set as follows. That is, θb5 <θb4 <θb3 <θb2 <θb3 is set.

  In the first vapor deposition source opening 61a, as shown in FIG. 8C, the number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a when there is no restriction nozzle is AB in the Y direction 10a. As shown in FIG. 8A, the number distribution of the first vapor deposition particles 91a emitted so as to reduce the difference in distribution between AB's in the Y direction 10a is corrected by correcting the state in which the center between them becomes high. The shape is set. Specifically, as shown in FIG. 6, the opening cross-sectional inclination angle θa3 in the first first limiting nozzle 61a3 is set to be the smallest, and the opening cross-sectional inclination angles θa2 in the first limiting nozzles 61a2 and 61a4 located on both sides thereof are set. θa4 is set to be larger than θa3, and the opening cross-sectional inclination angles θa1 and θa5 in the first limiting nozzles 61a1 and 61a5 located on the outer sides on both sides thereof are set to be larger than θa2 and θa4.

  In the present embodiment, the first region 92a to which the first vapor-deposited particles 91a adhere and the second region 92b to which the second vapor-deposited particles 91b adhere substantially coincide with each other, and in addition, FIGS. 8 (a) and 8 (b). As shown, the coating film 90 in which the mixing ratio of the first vapor deposition particles 91a and the second vapor deposition particles 91b is constant in the transport direction 10a can be formed.

  Accordingly, the film thickness distribution and the number ratio of the first vapor deposition particles 91a and the second vapor deposition particles 91b are made constant regardless of the position of the mask openings 71a and 71b in the transport direction 10a, and the mixing ratio thereof is constant. The coating film 90 can be easily formed. As a result, the host-dopant ratio is constant regardless of the position in the transport direction. Therefore, if the light emitting layers 23R, 23G, and 23B are formed according to the present embodiment, a light emitting characteristic and a current characteristic can be improved and a stable organic EL element can be formed. Therefore, a large-sized excellent in reliability and display quality can be obtained. An organic EL display device can be obtained.

  In the present embodiment, the directivity in the Y-axis direction of the first and second vapor deposition particles 91a and 91b toward the substrate 10 is limited by setting the shape of the restriction nozzles 61a1 to 61b6. In the state where the first region 92a on the substrate 10 to which the first vapor deposition particles 91a adhere and the second region 92b on the substrate 10 to which the second vapor deposition particles 91b adhere substantially coincide with each other. It is important to achieve a uniform number of particles in the region. Accordingly, even when the mask openings 71a and 71b are arranged as the front row and the rear row in the transport direction 10a, the host / dopant ratio can be made constant regardless of the position of the mask openings 71a and 71b in the transport direction 10a. . However, the present invention is not limited to this.

  In the present embodiment, it has been described that only the opening cross-section inclination angles of the limiting nozzles 61a1 to 61b6 are set. The structure is not limited to this, as long as it can control the properties and achieve a uniform number of particles in the first and second regions 92a and 92b.

<Embodiment 2>
FIG. 9 is a view along a plane passing through the vapor deposition source opening perpendicular to the traveling direction of the substrate of the vapor deposition apparatus according to the present embodiment, and shows the movement direction 10a of the substrate 10 showing a state in which the film 90 is formed on the substrate 10. FIG. 10 is a cross-sectional view showing a vapor deposition source opening cross-sectional view of the vapor deposition apparatus shown in FIG. 9, and FIG. 11 is a vapor deposition mask opening of the vapor deposition apparatus shown in FIG. FIGS. 12A and 12B are graphs showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 10, and (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of this embodiment, (b FIG. 4 is a graph showing a normalized film thickness distribution in the substrate conveyance direction by the vapor deposition source opening of the present embodiment, and (c) a normalized film thickness distribution in the substrate conveyance direction by the conventional vapor deposition source opening.

The vapor deposition apparatus according to this embodiment uses a vapor deposition mask having a size smaller than that of the deposition target substrate (substrate), and performs vapor deposition while scanning the substrate, the mask unit, and the vapor deposition source 60 while moving relative to each other. Used for vapor deposition (scan vapor deposition) using a scanning method.
In this embodiment, the scanning direction and the direction parallel to the scanning direction (first direction) are defined as the Y direction (Y axis direction), and the direction perpendicular to the scanning direction (second direction) is defined as the X direction (X axis). Direction).

  The vapor deposition apparatus according to the present embodiment includes a vacuum chamber (film formation chamber), a substrate holder as a substrate holding member that holds the film formation substrate 10, a substrate movement mechanism (movement mechanism) that moves the film formation substrate 10, A vapor deposition unit including a vapor deposition source 60, alignment observation means such as an image sensor, a control circuit, and the like are provided.

  The vapor deposition source 60 and the vapor deposition mask 70 constitute a vapor deposition unit. The substrate 10 moves relative to the vapor deposition mask 70 on the opposite side of the vapor deposition source 60 along the arrow 10a at a constant speed. For convenience of the following description, the horizontal axis parallel to the moving direction (first direction) 10a of the substrate 10 is the Y axis, and the in-plane direction axis perpendicular to the Y axis is the X axis, the X axis and the Y axis are perpendicular An XYZ orthogonal coordinate system is set with the substrate normal direction axis as the Z axis. For convenience of explanation, the arrow side in the Z-axis direction is referred to as “upper side”.

  The vapor deposition source 60 includes a first vapor deposition source 60a, a second vapor deposition source 60b, and a third vapor deposition source 60c. The first vapor deposition source 60a, the second vapor deposition source 60b, and the third vapor deposition source 60c have a plurality of first vapor deposition source openings 61a and a plurality of second vapor deposition source openings on their upper surfaces (i.e., surfaces facing the vapor deposition mask 70). 61b and a plurality of third vapor deposition source openings 61c are provided. The plurality of first deposition source openings 61a, the plurality of second deposition source openings 61b, and the plurality of third deposition source openings 61c are arranged at different positions in the Y-axis direction, and each follow a straight line parallel to the X-axis direction. Arranged at a constant pitch. The plurality of first deposition source openings 61a, the plurality of second deposition source openings 61b, and the plurality of third deposition source openings 61c are arranged at the same position in the X-axis direction, and as shown in FIG. A column 61A, a column 61B, a column 61C, a column 61D, a column 61E, and a column 61F are formed. Each vapor deposition source opening 61a, 61b, 61c has a nozzle shape opened upward along the Z-axis.

  The first vapor deposition source opening 61a, the second vapor deposition source opening 61b, and the third vapor deposition source opening 61c are directed toward the vapor deposition mask 70 by vapor of the first material that is the material of the light emitting layer (that is, the first vapor deposition particles 91a), The vapor of the second material (that is, the second vapor deposition particles 91b) and the vapor of the third material (that is, the third vapor deposition particles 91c) are released. For example, the host vapor (first vapor deposition particles 91a) constituting the light emitting layer is emitted from the first vapor deposition source opening 61a of the first vapor deposition source 60a, and light is emitted from the second vapor deposition source opening 61b of the second vapor deposition source 60b. Assist vapor (second vapor deposition particles 91b) constituting the layer and dopant vapor (third vapor deposition particles 91c) constituting the light emitting layer can be emitted from the third vapor deposition source opening 61c of the third vapor deposition source 60c. .

  The vapor deposition mask 70 is a plate-like object whose main surface (surface having the maximum area) is parallel to the XY plane, and a plurality of mask openings 71a are intermittently provided at different positions in the X-axis direction along the X-axis direction. In addition to being formed, a plurality of mask openings 71b are formed intermittently at different positions in the X-axis direction, alternately with the plurality of mask openings 71a. The mask openings 71a and 71b are through holes that penetrate the vapor deposition mask 70 in the Z-axis direction.

  A plurality of mask openings 71a are provided so as to be at the same position in the X direction, and a plurality of mask openings 71b are provided so as to be at the same position in the X direction. The plurality of mask openings 71a and the mask openings 71b are arranged at different Y-direction positions, and the plurality of mask openings 71a form a rear row, and the plurality of mask openings 71b form a front row. As shown in FIG. 11, the mask openings 71a are the positions of the columns 71A, 71C, and 71E in the Y direction, and the mask openings 71b are the positions of the columns 71B, 71D, and 71F.

  In the plurality of first deposition source openings 61a, the plurality of second deposition source openings 61b, the plurality of third deposition source openings 61c, and the plurality of mask openings 71a and 71b, the deposition source openings in the Y direction during the deposition process. The rows 61A of 61a, 61b, 61c and the rows 71A of the mask openings 71a are set so as to overlap in plan view. Similarly, the row 61B of the vapor deposition source openings 61a, 61b, 61c and the row 71B of the mask opening 71b in the Y direction are set to overlap in plan view, and the row 61C of the vapor deposition source openings 61a, 61b, 61c in the Y direction and the mask. The rows 71C of the openings 71a are set so as to overlap in plan view, the rows 61D of the evaporation source openings 61a, 61b, 61c in the Y direction and the rows 71D of the mask openings 71b are set so as to overlap in plan view, and the evaporation in the Y direction is set. The row 61E of the source openings 61a, 61b, 61c and the row 71E of the mask opening 71a are set to overlap in plan view, and the row 61F of the evaporation source openings 61a, 61b, 61c and the row 71F of the mask opening 71b in the Y direction are set. It is set to overlap in plan view.

  In this embodiment, each of the mask openings 71a and 71b has a slit shape parallel to the Y axis corresponding to the pixel pitch as shown in the row 71A of FIG. Is not limited to this, and may be, for example, a slot shape. In FIG. 11, the slit shape corresponding to the picture element pitch of the mask openings 71a and 71b in rows other than the row 71A is not shown. The shape and dimensions of all the mask openings may be the same or different. The pitch of the mask openings in the X-axis direction may be constant or different. The Y direction region of the mask opening 71a is indicated by AA ', and the Y direction region of the mask opening 71b is indicated by BB'.

  Furthermore, in the present invention, as shown in FIG. 9, a restriction plate unit 80 that restricts the direction in which the first to third vapor deposition particles 91 a to 91 c are emitted may be provided on the upper side of the vapor deposition source 60. it can. In this case, a vapor deposition unit is comprised by the vapor deposition source 60, the vapor deposition mask 70, and the limiting plate unit 80 arrange | positioned among these.

  Here, the limiting plate unit 80 releases the plurality of first deposition source openings 61a, the plurality of second deposition source openings 61b, and the plurality of third deposition source openings 61c up to the respective rows 61A to 61F. Through holes (restriction openings) 81a, 81b, and 81c, which serve as restriction openings for restricting the directionality in which the vapor deposition particles 91a to 91c fly to the vicinity of the Z-axis direction, are provided at corresponding positions. The vapor deposition particles 91a to 91c whose directivity is restricted by the through holes 81a, 81b, and 81c are restricted in directivity so as to reach the first region 92a, the second region 92b, and the third region 92c on the substrate 10, respectively. it can. Here, by disposing a limiting plate, only an arbitrary region is allowed to pass, and this is one that does not allow vapor deposition particles to adhere to other than the arbitrary region, and specifically, for example, is emitted from the vapor deposition source opening 61A. The deposited particles are not attached to 71B or 71C other than the mask opening 71A.

  The plurality of vapor deposition source openings 61a, 61b, 61c and the vapor deposition mask 70 are separated in the Z-axis direction. It is preferable that the relative positions of the vapor deposition sources 61a, 61b, 61c and the vapor deposition mask 70 are substantially constant at least during the period of performing separate vapor deposition.

  The substrate 10 is held by the holding device 55. As the holding device 55, for example, an electrostatic chuck that holds the surface of the substrate 10 opposite to the deposition surface 10e with electrostatic force can be used. Thereby, the board | substrate 10 can be hold | maintained in the state which does not have the bending | flexion by the dead weight of the board | substrate 10 substantially. However, the holding device 55 for holding the substrate 10 is not limited to the electrostatic chuck, and may be other devices.

  The substrate 10 held by the holding device 55 is parallel to the Y axis at a constant speed by the moving mechanism 56 while the opposite side of the vapor deposition source 60 from the vapor deposition mask 70 is separated from the vapor deposition mask 70 by a certain distance. Scanning (moving) along the moving direction 10a. The movement of the substrate 10 may be a reciprocating movement, or may be a unidirectional movement toward only one of them. The configuration of the moving mechanism 56 is not particularly limited. For example, a known transport driving mechanism such as a feed screw mechanism that rotates a feed screw with a motor or a linear motor can be used. The scanning speed may not be constant, and may be changed according to the deposition rate, for example.

  The vapor deposition unit, the substrate 10, the holding device 55 that holds the substrate 10, and the moving mechanism 56 that moves the substrate 10 are accommodated in a vacuum chamber. The vacuum chamber is a sealed container, and its internal space is decompressed and maintained in a predetermined low pressure state.

  In the row 61A, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. The vapor deposition particles 91c all pass through the mask openings 71a in the vapor deposition mask 70, which is the rear row of the row 71A.

  In the row 61B, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. In the vapor deposition mask 70, all the vapor deposition particles 91c pass through the mask opening 71b which is the front row of the row 71B.

  In the column 61C, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. In the vapor deposition mask 70, all the vapor deposition particles 91c pass through the mask openings 71a that are the rear row of the row 71C.

  In the row 61D, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. In the vapor deposition mask 70, all the vapor deposition particles 91c pass through the mask opening 71b which is the front row of the row 71D.

  In the row 61E, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. The vapor deposition particles 91c all pass through the mask openings 71a in the vapor deposition mask 70, which is the rear row of the row 71E.

  In the row 61F, the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a, the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b, and the third vapor emitted from the third vapor deposition source opening 61c. All of the vapor deposition particles 91c pass through the mask opening 71b which is the front row of the row 71F in the vapor deposition mask 70.

  The first to third vapor deposition particles 91a, 91b, 91c that have passed through the mask opening 71a or the mask opening 71b are vapor deposition surfaces of the substrate 10 traveling in the Y-axis direction (that is, on the side facing the vapor deposition mask 70 of the substrate 10). Surface) 10e is formed, and a coating 90 in which the first to third vapor deposition particles 91a, 91b, 91c are mixed is formed. The coating 90 has a stripe shape corresponding to the pixel pitch extending in the Y-axis direction corresponding to the mask opening 71a or the mask opening 71b.

  As described above, when the material of the first vapor deposition particle 91a is the host, the material of the second vapor deposition particle 91b is the assist, and the material of the third vapor deposition particle 91c is the dopant, the assist and the dopant are dispersedly contained in the host. A coated film 90 can be formed.

  For each color of red, green, and blue, at least one of the materials of the first vapor deposition particles 91a, the second vapor deposition particles 91b, and the third vapor deposition particles 91c is changed, and vapor deposition is performed three times (separate vapor deposition). As a result, the striped film 90 (that is, the light emitting layers 23R, 23G, and 23B) corresponding to the respective colors of red, green, and blue can be formed on the deposition surface 10e of the substrate 10.

  In the present embodiment, the first vapor deposition source opening 61a, the second vapor deposition source opening 61b, and the third vapor deposition source opening 61c are provided with first to third limiting nozzles, respectively, and the film thickness distribution of the host assist dopant. However, distribution in the same shape is possible in the transport direction 10a.

  In the present embodiment, the region on the substrate 10 to which the first vapor deposition particles 91a restricted in directivity by the restriction plate unit 80 adhere is defined as the first region 92a, and the second vapor deposition in which directivity is restricted by the restriction plate unit 80. The region on the substrate 10 to which the particles 91b adhere is defined as a second region 92b, and the region on the substrate 10 to which the third vapor deposition particles 91c whose directionality is restricted by the restricting plate unit 80 is defined as a third region 92c. The Y-axis direction position of the first area 92a, the Y-axis direction position of the second area 92b, and the Y-axis direction position of the third area 92c substantially coincide with each other.

  In other words, the relative positions of the first to third vapor deposition source openings 61a, 61b, 61c, the limiting plate unit 80, and the substrate 10 are set so that the first region 92a, the second region 92b, and the third region 92c substantially coincide with each other. The position (distance, angle, etc.) is set. Each of the mask openings 71a and 71b is formed in a region on the vapor deposition mask 70 corresponding to a region where the first to third vapor deposition particles 91a to 91c overlap each other. Preferably, all of the mask openings 71a and 71b are formed in a region on the vapor deposition mask 70 corresponding to a region where the first to third vapor deposition source openings 61a, 61b and 61c overlap. In FIG. 11, at the position of the vapor deposition mask 70, each of the mask openings 71a and 71b, the first vapor deposition source opening 61a, the second vapor deposition source opening 61b, and the region on the substrate 10 corresponding to the third vapor deposition source opening 61c. The relationship between the region 92a, the second region 92b, and the third region 92c is shown.

  As shown in FIG. 12C, the first to third vapor deposition particles 91a, 91b, 91c in the case where there is no limiting nozzle, as shown in FIG. 12C, each have a certain spread (directivity) in the X-axis direction and the Y-axis direction. From the third vapor deposition source openings 61a, 61b, 61c. In this case, the first vapor deposition source opening 61a opens in a direction parallel to the Z axis.

  The number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a is the largest at the center in the opening direction (Z-axis direction in this example) of the first vapor deposition source opening 61a when there is no restriction nozzle. The angle gradually decreases as the angle formed with respect to the direction (outgoing angle) increases. That is, the first vapor deposition particles 91a have a peak at a position immediately above the first vapor deposition source opening 61a, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  The number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b is the largest at the center in the opening direction (Z-axis direction in this example) of the second vapor deposition source opening 61b when there is no restriction nozzle. The angle gradually decreases as the angle formed with respect to the direction (outgoing angle) increases. That is, the second vapor deposition particles 91b have a peak at a position immediately above the second vapor deposition source opening 61b, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  Similarly, the number of the third vapor deposition particles 91c emitted from the third vapor deposition source opening 61c is the most at the center in the opening direction of the third vapor deposition source opening 61c (in this example, the Z-axis direction) when there is no restriction nozzle. In many cases, the angle gradually decreases as the angle (outgoing angle) formed with respect to the opening direction increases. In other words, the third vapor deposition particles 91c have a peak at a position immediately above the third vapor deposition source opening 61c, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  As described above, the distribution of the second vapor deposition particles 91b and the distribution of the third vapor deposition particles 91c are reversed in the Y direction (conveyance direction), and the difference in magnitude is larger than the distribution of the first vapor deposition particles 91a. It has become.

  Corresponding to correct the deviation of the distribution in the first to third vapor deposition particles 91a, 91b, 91c, in the present embodiment, as shown in FIG. First restriction nozzles 61a1, 61a2, 61a3, 61a4, 61a5 divided into five locations in the Y direction 10a are provided, and a second restriction nozzle divided into five locations in the Y direction 10a is provided in the second vapor deposition source opening 61b. 61b1, 61b2, 61b3, 61b4, 61b5 are provided, and the third vapor deposition source opening 61c is provided with third restriction nozzles 61c1, 61c2, 61c3, 61c4, 61c5 divided into five locations in the Y direction 10a. .

  In the second vapor deposition source opening 61b, as shown in FIG. 12C, the number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b when there is no limiting nozzle is AB in the Y direction 10a. The distribution is balanced by correcting the state in which the front side in the conveyance direction is higher than the center between 'and the profile between AB' in the Y direction 10a becomes as equal as possible as shown in FIG. 12 (a). In this way, the number distribution of the second vapor deposition particles 91b to be discharged is set. That is, the second vapor deposition source opening 61b has a second vapor deposition particle 91b number distribution normalized by the first vapor deposition particle 91a number distribution between AB ′ in the Y direction 10a as shown in FIG. It is set to be uniform between AB ′.

  Specifically, as shown in FIG. 10, the opening section inclination angle θb5 in the second restricting nozzle 61b5 located on the front side in the transport direction is set to be the smallest, and the opening section inclination angle increases toward the rear side in the transport direction. Is set as follows. That is, θb5 <θb4 <θb3 <θb2 <θb3 is set.

  In the third vapor deposition source opening 61c, as shown in FIG. 12C, the number of the third vapor deposition particles 91c emitted from the third vapor deposition source opening 61c is AB in the Y direction 10a when there is no restriction nozzle. The distribution is balanced by correcting the state in which the rear side in the transport direction is higher than the center between 'and the profile between AB' in the Y direction 10a becomes as equal as possible as shown in FIG. 12 (a). In this way, the number distribution of the third vapor deposition particles 91c to be emitted is set. That is, the third vapor deposition source opening 61c has a third vapor deposition particle 91c number distribution normalized by the first vapor deposition particle 91a number distribution between AB ′ in the Y direction 10a, as shown in FIG. It is set to be uniform between AB ′.

  Specifically, as shown in FIG. 10, the opening cross section inclination angle θc1 in the third limiting nozzle 61c1 located on the rearmost side in the transport direction is set to be the smallest, and the opening cross section inclination angle increases toward the front side in the transport direction. Set to That is, θc1 <θc2 <θc3 <θc4 <θc5 is set.

  In the first vapor deposition source opening 61a, as shown in FIG. 12C, the number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a when there is no restriction nozzle is AB in the Y direction 10a. The distribution of the number of first vapor deposition particles 91a to be released so as to reduce the difference in distribution between AB 'in the Y direction 10a as shown in FIG. The shape is set. Specifically, as shown in FIG. 10, the opening cross-sectional inclination angle θa3 in the first first limiting nozzle 61a3 is set to be the smallest, and the opening cross-sectional inclination angles θa2 in the first limiting nozzles 61a2 and 61a4 located on both sides thereof are set. θa4 is set to be larger than θa3, and the opening cross-sectional inclination angles θa1 and θa5 in the first limiting nozzles 61a1 and 61a5 located on the outer sides on both sides thereof are set to be larger than θa2 and θa4.

  In the present embodiment, the first region 92a to which the first vapor deposition particles 91a adhere, the second region 92b to which the second vapor deposition particles 91b adhere, and the third region 92c to which the third vapor deposition particles 91c adhere substantially coincide. Moreover, as shown in FIGS. 12A and 12B, a coating 90 in which the mixing ratio of the first vapor-deposited particles 91a, the second vapor-deposited particles 91b, and the third vapor-deposited particles 91c is constant in the transport direction 10a. Can be formed.

  Thereby, the film thickness distribution and the particle number ratio of the first vapor deposition particles 91a, the second vapor deposition particles 91b, and the third vapor deposition particles 91c are made constant regardless of the position of the mask openings 71a, 71b in the transport direction 10a. The film 90 having a constant mixing ratio can be easily formed. Thereby, the host assist dopant ratio becomes constant regardless of the position in the transport direction. Therefore, if the light emitting layers 23R, 23G, and 23B are formed according to the present embodiment, a light emitting characteristic and a current characteristic can be improved and a stable organic EL element can be formed. Therefore, a large-sized excellent in reliability and display quality can be obtained. An organic EL display device can be obtained.

  In the present embodiment, the directivity in the Y-axis direction of the first to third vapor deposition particles 91a, 91b, and 91c toward the substrate 10 is limited by setting the shape of the restriction nozzles 61a1 to 61c6. When it is assumed that there is no mask 70, the first region 92a on the substrate 10 to which the first vapor deposition particles 91a adhere and the second region 92b on the substrate 10 to which the second vapor deposition particles 91b adhere and the third vapor deposition particles 91c It is important to realize the uniformity of the number of particles in these regions in a state where the third regions 92c on the substrate 10 to which the toner adheres substantially coincide. Accordingly, even when the mask openings 71a and 71b are arranged as the front row and the rear row in the transport direction 10a, the host assist dopant ratio is made constant regardless of the position of the mask openings 71a and 71b in the transport direction 10a. Can do. However, the present invention is not limited to this.

  In the present embodiment, it has been described that only the opening shapes of the restriction nozzles 61a1 to 61c6 are set. The configuration is not limited to this as long as the control can be performed and the number of particles in the first to third regions 92a, 92b, and 92c can be made uniform.

<Embodiment 3>
FIG. 13 is a view along a plane passing through the vapor deposition source opening perpendicular to the traveling direction of the substrate of the vapor deposition apparatus according to this embodiment, and shows the movement direction 10a of the substrate 10 showing the state in which the coating film 90 is formed on the substrate 10. FIG. 14 is a plan view showing a vapor deposition source opening of the vapor deposition apparatus shown in FIG. 13, and FIG. 15 is a plan view showing a vapor deposition mask opening of the vapor deposition apparatus shown in FIG. 16 is a graph showing the setting conditions of the vapor deposition source opening of the vapor deposition apparatus shown in FIG. 14, and (a) the film thickness distribution in the substrate transport direction by the vapor deposition source opening of the present embodiment, (b) It is a graph which shows the normalized film thickness distribution in the board | substrate conveyance direction by the vapor deposition source opening of embodiment, and the normalized film thickness distribution in the board | substrate conveyance direction by the conventional vapor deposition source opening.

  In the present embodiment, the difference from the second embodiment described above is that the means for correcting the film thickness distribution relates to the shape of the vapor deposition source opening, and other corresponding configurations are denoted by the same reference numerals. Description is omitted.

In the present embodiment, the second region 92b and the third region 92c are both the second and third deposition source openings 61b and 61c positioned in the front and rear direction in the transport direction with respect to the central first deposition source opening 61a. The radiation angle of the second and third vapor deposition particles 91b, 91c is set to be inclined toward the first vapor deposition source opening 61a as compared with the radiation angle of the first vapor deposition particle 91a so as to overlap the first region 92a. Yes.
As a result, the first to third vapor deposition particles 91a, 91b, 91c emitted from the vapor deposition source openings 61a, 61b, 61c proceed in the set radial directions, respectively. The arrangement of the limiting plate unit 80 is appropriately set corresponding to the radiation angles of the second and third vapor deposition particles 91b and 91c and the set positions of the regions 92a, 92b and 92c.

  Further, the second vapor deposition source opening 61b opens toward a direction inclined rearward in the transport direction 10a with respect to the direction parallel to the Z axis, and the second vapor deposition particles 91b are emitted by the restriction opening 81b of the restriction plate unit 80. The angle is limited to a direction inclined to the rear side in the transport direction 10a with respect to the Z-axis direction. The third vapor deposition source opening 61c opens toward a direction inclined forward of the conveyance direction 10a with respect to the direction parallel to the Z axis, and the emission angle of the third vapor deposition particles 91c is set by the restriction opening 81c of the restriction plate unit 80. It is limited to a direction inclined to the front side in the transport direction 10a with respect to the Z-axis direction.

  The number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a is the largest at the center in the opening direction (Z-axis direction in this example) of the first vapor deposition source opening 61a when there is no restriction nozzle. The angle gradually decreases as the angle formed with respect to the direction (outgoing angle) increases. That is, the first vapor deposition particles 91a have a peak at a position immediately above the first vapor deposition source opening 61a, and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction).

  The number of the second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b is inclined in the opening direction of the second vapor deposition source opening 61b (in this example, from the Z-axis direction to the rear side in the transport direction 10a when there is no restriction nozzle. At the center of the opening direction), and gradually decreases as the angle (outgoing angle) formed with respect to the opening direction increases. That is, the second vapor deposition particles 91b have a peak at the position of the mask opening (rear row) 71a on the rear side in the Y direction (conveyance direction) and have a distribution that decreases toward the front and rear in the Y direction (conveyance direction). It is less in the direction restricted by the restriction opening 81b of the unit 80 (the direction inclined to the front side in the transport direction 10a than the Z-axis direction).

  Similarly, the number of the third vapor deposition particles 91c emitted from the third vapor deposition source opening 61c is equal to the opening direction of the third vapor deposition source opening 61c (in this example, the front side in the transport direction 10a from the Z-axis direction when there is no restriction nozzle). In the center of the direction inclined to the opening), and gradually decreases as the angle (emergence angle) formed with respect to the opening direction increases. That is, the third vapor deposition particles 91c have a peak at the position of the mask opening (front row) 71b on the front side in the Y direction (conveyance direction) and have a distribution that decreases toward the front and back in the Y direction (conveyance direction). It is less in the direction restricted by the 80 restriction openings 81c (the direction inclined to the rear side in the transport direction 10a than the Z-axis direction).

  As described above, the distribution of the second vapor deposition particles 91b and the distribution of the third vapor deposition particles 91c are reversed in the Y direction (conveyance direction), and the difference in magnitude is larger than the distribution of the first vapor deposition particles 91a. It has become.

  Such first to third vapor deposition particles 91a, 91b. Corresponding to the correction of the distribution shift in 91c, in the present embodiment, as shown in FIG. 14, the first limiting nozzle divided into five locations in the Y direction 10a is provided in the first vapor deposition source opening 61a. 61a1, 61a2, 61a3, 61a4, 61a5 are provided, and the second vapor deposition source opening 61b is provided with second restriction nozzles 61b1, 61b2, 61b3, 61b4, 61b5 divided into five locations in the Y direction 10a, The three vapor deposition source openings 61c are provided with third restriction nozzles 61c1, 61c2, 61c3, 61c4, 61c5 divided into five locations in the Y direction 10a.

  In the second vapor deposition source opening 61b, as shown in FIG. 16C, the number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b when there is no restriction nozzle is AB in the Y direction 10a. The distribution is balanced by correcting the state where the rear side in the conveyance direction is higher than the center between 'and the profile between AB' in the Y direction 10a is as equal as possible as shown in FIG. 16 (a). In this way, the number distribution of the second vapor deposition particles 91b to be discharged is set. That is, the second vapor deposition source opening 61b has a second vapor deposition particle 91b number distribution normalized by the number distribution of the first vapor deposition particles 91a between AB ′ in the Y direction 10a as shown in FIG. It is set to be uniform between AB ′.

  Specifically, the opening dimension in the Y direction 10a of the second limiting nozzle 61b3 directly above the vapor deposition source is set to be the smallest, and the total opening dimension in the Y direction of the second limiting nozzles 61b1 and 61b2 located on the front side in the transport direction is set. The value is set to be smaller than the total value of the opening dimensions in the Y direction of the second limiting nozzles 61b4 and 61b5 located on the rear side in the transport direction.

  In the third vapor deposition source opening 61c, as shown in FIG. 16C, the number of the second vapor deposition particles 91c emitted from the third vapor deposition source opening 61c when there is no restriction nozzle is AB in the Y direction 10a. The distribution is balanced by correcting the state where the front side in the conveyance direction is higher than the center between 'and the profile between AB' in the Y direction 10a becomes as equal as possible as shown in FIG. 16 (a). In this way, the number distribution of the third vapor deposition particles 91c to be emitted is set. That is, the third vapor deposition source opening 61c has a third vapor deposition particle 91c number distribution normalized by the number distribution of the first vapor deposition particles 91a between AB ′ in the Y direction 10a as shown in FIG. It is set to be uniform between AB ′.

  Specifically, the opening dimension in the Y direction 10a of the third limiting nozzle 61c3 directly above the vapor deposition source is set to be the smallest, and the opening dimension in the Y direction of the third limiting nozzles 61c4 and 61b5 located on the rear side in the transport direction is set. The total value is set to be smaller than the total value of the Y direction opening dimensions of the second limiting nozzles 61c1 and 61c2 positioned on the front side in the transport direction.

  In the first vapor deposition source opening 61a, as shown in FIG. 16C, the number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a when there is no restriction nozzle is AB in the Y direction 10a. As shown in FIG. 16A, the number distribution of the first vapor deposition particles 91a emitted so as to reduce the difference in distribution between AB's in the Y direction 10a is corrected by correcting the state in which the center between them becomes high. The shape is set. Specifically, as shown in FIG. 14, the opening dimension in the Y direction 10a of the first first limiting nozzle 61a3 is set to be the smallest, and the opening dimension in the Y direction 10a of the first limiting nozzles 61a2 and 61a4 located on both sides thereof is set. Is set larger than the first limiting nozzle 61a3, and the opening dimension in the Y direction 10a of the first limiting nozzles 61a1 and 61a5 located on both sides of the first limiting nozzle 61a3 is set larger than that of the first limiting nozzles 61a2 and 61a4.

  In the present embodiment, the first region 92a to which the first vapor deposition particles 91a adhere, the second region 92b to which the second vapor deposition particles 91b adhere, and the first region 92c to which the third vapor deposition particles 91c adhere substantially coincide. In addition, as shown in FIGS. 16A and 16B, a coating 90 in which the mixing ratio of the first vapor-deposited particles 91a, the second vapor-deposited particles 91b, and the third vapor-deposited particles 91c is constant in the transport direction 10a. Can be formed.

  Thereby, the film thickness distribution and the particle number ratio of the first vapor deposition particles 91a, the second vapor deposition particles 91b, and the third vapor deposition particles 91c are made constant regardless of the position of the mask openings 71a, 71b in the transport direction 10a. The film 90 having a constant mixing ratio can be easily formed. Thereby, the host assist dopant ratio becomes constant regardless of the position in the transport direction. Therefore, if the light emitting layers 23R, 23G, and 23B are formed according to the present embodiment, a light emitting characteristic and a current characteristic can be improved and a stable organic EL element can be formed. Therefore, a large-sized excellent in reliability and display quality can be obtained. An organic EL display device can be obtained.

  In the present embodiment, the directivity in the Y-axis direction of the first to third vapor deposition particles 91a, 91b, and 91c toward the substrate 10 is limited by setting the shape of the restriction nozzles 61a1 to 61c6. When it is assumed that there is no mask 70, the first region 92a on the substrate 10 to which the first vapor deposition particles 91a adhere and the second region 92b on the substrate 10 to which the second vapor deposition particles 91b adhere and the third vapor deposition particles 91c It is important to realize the uniformity of the number of particles in these regions in a state where the third regions 92c on the substrate 10 to which the toner adheres substantially coincide. Accordingly, even when the mask openings 71a and 71b are arranged as the front row and the rear row in the transport direction 10a, the host assist dopant ratio is made constant regardless of the position of the mask openings 71a and 71b in the transport direction 10a. Can do. However, the present invention is not limited to this.

  In the present embodiment, it has been described that only the opening shapes of the restriction nozzles 61a1 to 61c6 are set. The configuration is not limited to this as long as the control can be performed and the number of particles in the first to third regions 92a, 92b, and 92c can be made uniform.

  Furthermore, in the present invention, as shown in FIG. 17, the limiting plate unit 80 may be provided between the vapor deposition source 60 and the mask 70. In this case, a vapor deposition unit is comprised by the vapor deposition source 60, the vapor deposition mask 70, and the limiting plate unit 80 arrange | positioned among these.

In this example, as in the example shown in FIG. 14, the Y-axis direction positions of the first region 92a, the second region 92b, and the third region 92c are substantially the same, but the first deposition source opening 61a is in the center. On the other hand, the second and third vapor deposition source openings 61b and 61c positioned in the front and rear directions in the transport direction are both inclined inward so that the second region 92b and the third region 92c overlap the first region 92a. In this way, the emission angles of the second and third vapor deposition particles 91b and 91c are set.
Thereby, each of the first to third vapor deposition particles 91a, 91b, 91c emitted from the vapor deposition source openings 61a, 61b, 61c is emitted while maintaining a predetermined distribution in the respective emission directions. The arrangement of the limiting plate unit 80 is appropriately set in accordance with the emission angles of the second and third vapor deposition particles 91b and 91c and the set positions of the regions 92a, 92b and 92c.

  In this example, the first to third vapor deposition particles 91a, 91b. Similarly to the example shown in FIG. 16C, 91c is emitted from the first to third vapor deposition source openings 61a, 61b, 61c with a certain spread (directivity) in the X-axis direction and the Y-axis direction as they are. The In the first embodiment, the first vapor deposition source opening 61a opens in a direction parallel to the Z axis. Further, the second vapor deposition source opening 61b and the third vapor deposition source opening 61c are opened in the direction inclined from the Z axis to the front and rear sides in the Y direction as described above.

The number of the first vapor deposition particles 91a emitted from the first vapor deposition source opening 61a is equal to the opening direction of the first vapor deposition source opening 61a (in the same manner as in the example shown in FIG. 16C) when there is no restriction nozzle. In the example, it is the largest at the center in the Z-axis direction), and gradually decreases as the angle (outgoing angle) formed with respect to the opening direction increases.
The number of second vapor deposition particles 91b emitted from the second vapor deposition source opening 61b is the opening direction of the second vapor deposition source opening 61b (in this example, the rear side in the transport direction 10a rather than the Z-axis direction) when there is no restriction nozzle. It is the largest in the direction along the (inclined direction), and gradually decreases as the angle (outgoing angle) formed with respect to the opening direction increases.
Similarly, the number of the third vapor deposition particles 91c emitted from the third vapor deposition source opening 61c is equal to the opening direction of the third vapor deposition source opening 61c (in this example, the transport direction 10a rather than the Z-axis direction) when there is no restriction nozzle. It is the largest in the direction along the direction inclined to the front side, and gradually decreases as the angle (outgoing angle) formed with respect to the opening direction increases.

  Corresponding to the distribution to correct these, also in this example, similarly to the example shown in FIG. 14, the first vapor deposition source opening 61a to the third vapor deposition source opening 61c are limited in the Y direction 10a. A nozzle can be provided. Further, in this example, since the second vapor deposition source opening 61b and the third vapor deposition source opening 61c are inclined inward, further correction can be made when the divided shape is the same as the example shown in FIG. It becomes possible.

  Furthermore, the limiting plate unit 80 of this example is formed with a plurality of limiting openings, each of which is a through hole that passes through the limiting plate unit 80 in the Z-axis direction. The plurality of restriction openings are a plurality of first restriction openings 82a arranged along a straight line parallel to the X-axis direction and a plurality of second restriction openings 82b arranged along another straight line parallel to the X-axis direction. And a plurality of third limiting openings 82c arranged along another straight line parallel to the X-axis direction. In the Y-axis direction, the plurality of third restriction openings 82c are disposed on the side opposite to the plurality of second restriction openings 82b with respect to the first restriction opening 82a. The first restriction opening 82a, the third restriction opening 82c, and the second restriction opening 82b that are adjacent to each other in the Y-axis direction are disposed along another straight line that is parallel to the Y-axis direction. The first restriction openings 82a adjacent in the X-axis direction are separated by the first restriction plate, and the second restriction openings 82b adjacent in the X-axis direction are separated by the second restriction plate, and are adjacent in the X-axis direction. The third restriction opening 82c is separated by a third restriction plate. The plurality of third limiting plates are arranged at the same pitch along the X-axis direction and at the same position as the plurality of second limiting plates in the X-axis direction. The first restriction opening 82a and the second restriction opening 82b adjacent in the Y-axis direction are separated by the first partition plate 85b, and the first restriction opening 82a and the third restriction opening 82c adjacent in the Y-axis direction are the first. It is separated by two partition plates 85c.

  The plurality of first to third restriction plates are arranged at a constant pitch along the X-axis direction. The plurality of first restriction openings 82a, the plurality of second restriction openings 82b, and the plurality of third restriction openings 82c are arranged at the same position in the X-axis direction. The plurality of first restriction openings 82a, the plurality of second restriction openings 82b, and the plurality of third restriction openings 82c are arranged at different positions in the Y-axis direction.

The plurality of vapor deposition source openings 61a, 61b, 61c and the limiting plate unit 80 are separated from each other in the Z-axis direction, and the limiting plate unit 80 and the vapor deposition mask 70 are separated from each other in the Z-axis direction. It is preferable that the relative positions of the vapor deposition sources 60a, 60b, 61c, the limiting plate unit 80, and the vapor deposition mask 70 are substantially constant at least during the period of performing separate vapor deposition.
The limiting plate unit 80 restricts the directivity in the X-axis direction and the Y-axis direction of the first to third vapor deposition particles 91 a to 91 c that are emitted from the first to third vapor deposition source openings 61 a to 61 c and travel toward the substrate 10. Thereby, an unnecessary vapor deposition particle can be restrict | limited and a desired vapor deposition particle can be made to adhere only to arbitrary mask opening area | regions.

  In the present embodiment, when the vapor deposition unit is arranged in the vapor deposition apparatus so that the Y direction becomes the scanning direction and the substrate 10, the vapor deposition unit, and the vapor deposition source are relatively moved, the restriction nozzle opening is performed. Are arranged at unequal pitches in the transport direction, the host used as the first vapor deposition particles is divided into five in the transport direction, and the dopant and assist used as the second vapor deposition particles and the third vapor deposition particles are divided into five in the transport direction. The nozzle opening width and the distance between the openings are designed so that the film-formation distribution in the transport direction is aligned with other materials, and is set so as not to be constant. As the film-formation conditions, rate: host material 2 angstrom / s, dopant 1 material 0.3 angstrom / s, assist material 1 angstrom / s, film thickness: 300 angstrom, and deposition source openings are arranged at unequal pitches in the substrate transport direction 10a. Then, by setting the opening pitch so that the distribution of the host and the dopant becomes equal, the film thickness distribution of the host assist dopant becomes the same shape in the transport direction.

Here, the openings (or shielding objects) arranged at unequal pitches are not limited to nozzle openings but may be aperture-shaped. Further, the restriction plate is assumed to cut out the distribution, and the restriction nozzle is assumed to change the distribution itself, and the difference is considered to be a pressure state.
As a result, the host assist dopant ratio became constant regardless of the position in the transport direction. Thereby, the effect that the chromaticity / brightness difference of the vapor deposition area | region boundary in a light-emitting device is eliminated can be show | played.

  Further, in the present embodiment, the restriction nozzle openings are arranged in the same direction in the X direction, but the restriction nozzles correspond to the front row and the rear row corresponding to the zigzag vapor deposition mask 70 shape of FIG. The shape of the opening can be changed. That is, the mask openings 71a at the positions of the columns 61A, 61C, and 61E in the Y direction in FIG. 14 have shapes corresponding to the columns 71A, 71C, and 71E in FIG. The mask openings 71b at the positions of 61D and 61F can have shapes corresponding to the columns 71B, 71D, and 71F in FIG. Thereby, the mask opening 71a controls the distribution of the vapor deposition particles between AA ′ in the Y direction in FIG. 16, and the mask opening 71b is the vapor deposition particles between BB ′ in the Y direction in FIG. It is necessary to control the distribution difference between AA 'and BB', but it is necessary to control the distribution between AA 'and BB' individually. In addition, since the distribution of the three vapor deposition particles can be adjusted, the design can be afforded, the distribution can be improved, and the material utilization efficiency can be improved.

The field of application of the vapor deposition apparatus and vapor deposition method of the present invention is not particularly limited, but can be preferably used for forming a light emitting layer of an organic EL display device.

DESCRIPTION OF SYMBOLS 10 ... Board | substrate 10a ... 1st direction 20 ... Organic EL element 23R, 23G, 23B ... Light emitting layer 56 ... Moving mechanism 60 ... Deposition source 61a, 61b, 61c ... Deposition source opening 61a1-61c6 ... Restriction nozzle 70 ... Deposition mask 71a, 71b ... Mask openings 92a, 92b, 92c ... Vapor deposition region 90 ... Films 91a, 91b, 91c ... Vapor deposition particles

Claims (10)

A vapor deposition apparatus for forming a film having a pattern corresponding to the opening shape of the mask opening on a substrate through a vapor deposition mask in which a mask opening is formed,
The vapor deposition apparatus includes:
A vapor deposition unit having a plurality of vapor deposition sources with respective vapor deposition source apertures co-deposited with respect to at least the mask aperture;
A moving mechanism for relatively moving one of the substrate and the vapor deposition unit along the first direction of the in-plane direction of the substrate with respect to the other;
With
The plurality of vapor deposition source openings are arranged as different positions from the upstream side in the first direction,
The plurality of vapor deposition source openings are provided with a restriction nozzle that restricts the directivity in the in-plane direction of the plurality of vapor deposition particles emitted from the plurality of vapor deposition source openings and directed to the substrate,
With respect to the vapor deposition region on the substrate to which the plurality of vapor deposition particles adhere when it is assumed that there is no vapor deposition mask, the vapor deposition region has at least a region where the plurality of vapor deposition particles overlap,
The vapor deposition particles in the first direction are reduced so that the restriction nozzle reduces a difference in density distribution in the vapor deposition particles in the vapor deposition region caused by the position of the restriction nozzle in the first direction. A vapor deposition apparatus characterized by being set so as to limit directivity. The plurality of vapor deposition sources includes first, second, and third vapor deposition sources, and the first, second, and third vapor deposition sources include first, second, and third vapor deposition source openings,
The third, first, and second vapor deposition source openings are sequentially arranged as different positions from the upstream side to the downstream side in the first direction,
The first, second and third vapor deposition source openings respectively have the surfaces of the first, second and third vapor deposition particles emitted from the first, second and third vapor deposition source openings and directed to the substrate. First, second and third restriction nozzles are provided for restricting directivity in the inward direction;
When it is assumed that there is no vapor deposition mask, the regions on the substrate to which the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles adhere are defined as a first region, a second region, and a third region, respectively. ,
The first, second, and third vapor deposition source openings are controlled to tilt the emission directions of the second and third vapor deposition particles so that the first region, the second region, and the third region have overlapping portions. And
The second restricting nozzle tilts the discharge direction of the second vapor deposition particles toward the first restricting nozzle so that the second region overlaps the first region. The second vapor deposition particle density which increases on the first limiting nozzle side is reduced, and the difference in the second vapor deposition particle density in the second region in the first direction is reduced to reduce the distribution width. Limit the directivity to
The third restricting nozzle tilts the discharge direction of the third vapor deposition particles toward the first restricting nozzle so as to overlap the third region with the first region, so that the third region in the first direction The third vapor deposition particle density that increases on the first limiting nozzle side is reduced, and the difference in the third vapor deposition particle density in the third region in the first direction is reduced to reduce the width of the distribution. Limit the directivity to
The first restriction nozzle provided at the first vapor deposition source opening is directed to reduce a difference in the first vapor deposition particle distribution that decreases in the first region on the upstream side and the downstream side in the first direction. Limit sex,
In the first, second and third limiting nozzles, the first, second and third vapor deposition particle density distribution states in the first direction are made identical to each other. The vapor deposition apparatus according to claim 1, wherein the directivity of the three vapor deposition particles is set to be restrictable.   The limiting nozzle is set to limit directivity of the first to third vapor deposition particles in the first direction so that the positions of the first to third regions in the first direction coincide with each other. The vapor deposition apparatus according to claim 2.   The first restriction nozzle provided in the first vapor deposition source opening; the second restriction nozzle provided in the second vapor deposition source opening; and the third restriction nozzle provided in the third vapor deposition source opening; The vapor deposition apparatus according to claim 2, wherein each of the vapor deposition apparatuses is divided into a plurality of parts in the first direction.   The vapor deposition apparatus according to claim 4, wherein the plurality of divided first to third restriction nozzles are non-uniformly arranged in the first direction.   The limiting nozzle changes the size of the nozzle opening divided into a plurality by the second limiting nozzle at the position in the first direction, and the first deposition source opening adjacent in the first direction in the second region. The directivity of the second vapor deposition particles is set to be limited so as to correct the density distribution inclined to the side, and the size of the nozzle opening divided into a plurality by the third limiting nozzle is changed at the position in the first direction. In the third region, the directivity of the third vapor deposition particles is set to be limited so as to correct the density distribution inclined toward the first vapor deposition source opening side adjacent in the first direction, and the first restriction nozzle The size of the nozzle openings divided into a plurality of positions is changed at the position in the first direction, and in the first region, the second and third vapor deposition source openings adjacent to the center in the first direction. Vapor deposition device according to claim 2 or 3, wherein the directivity of the first vapor deposition particles be limited it can set to correct the density distribution inclined. A vapor deposition method comprising a vapor deposition step of forming vapor deposition particles on a substrate to form a film having a predetermined pattern,
The vapor deposition method which performs the said vapor deposition process using the vapor deposition apparatus in any one of Claim 1-6. The vapor deposition method according to claim 7,
The vapor deposition step is performed using the vapor deposition apparatus according to any one of claims 2 to 6,
The deposition method, wherein the coating includes a portion in which the first deposition particles, the second deposition particles, and the third deposition particles are mixed. The vapor deposition method according to claim 8,
The vapor deposition step is performed using the vapor deposition apparatus according to any one of claims 2 to 6,
The vapor deposition method, wherein the mixing ratio of the first vapor deposition particles, the second vapor deposition particles, and the third vapor deposition particles in the coating is constant in the first thickness direction.   The vapor deposition method according to claim 7, wherein the film is a light emitting layer of an organic EL element.

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