JP2017017104A - 熱処理装置及び温度制御方法 - Google Patents
熱処理装置及び温度制御方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 45
- 238000007669 thermal treatment Methods 0.000 title abstract 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 53
- 238000012545 processing Methods 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000005259 measurement Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims description 30
- 238000009529 body temperature measurement Methods 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 89
- 239000007789 gas Substances 0.000 description 50
- 230000005855 radiation Effects 0.000 description 31
- 239000000047 product Substances 0.000 description 28
- 238000000926 separation method Methods 0.000 description 16
- 239000012495 reaction gas Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 10
- 238000012546 transfer Methods 0.000 description 10
- 238000009826 distribution Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/07—Arrangements for adjusting the solid angle of collected radiation, e.g. adjusting or orienting field of view, tracking position or encoding angular position
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- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/10—Scanning systems
- G02B26/12—Scanning systems using multifaceted mirrors
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- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1927—Control of temperature characterised by the use of electric means using a plurality of sensors
- G05D23/193—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces
- G05D23/1931—Control of temperature characterised by the use of electric means using a plurality of sensors sensing the temperaure in different places in thermal relationship with one or more spaces to control the temperature of one space
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Abstract
Description
処理容器内に設けられた回転テーブルの表面に基板を載置し、回転テーブルを回転させながら加熱手段により基板を加熱して所定の成膜処理を行う熱処理装置であって、
前記加熱手段の温度を測定する接触型の第1の温度測定手段と、
前記回転テーブルが回転している状態で、前記回転テーブルに載置された基板の温度を測定する非接触型の第2の温度測定手段と、
前記第1の温度測定手段により測定される第1の測定値と前記第2の温度測定手段により測定される第2の測定値とに基づいて、前記加熱手段を制御する温度制御手段と
を備える。
本実施形態の熱処理装置の一例について説明する。図1は、本実施形態に係る熱処理装置の概略縦断面図である。図2は、本実施形態に係る熱処理装置の概略斜視図である。図3は、本実施形態に係る熱処理装置の概略平面図である。
次に、前述した本実施形態の熱処理装置1を用いて行われる温度制御方法の一例について説明する。
11 処理容器
12 回転テーブル
20 ヒータ
3 ヒータ用熱電対
4 放射温度測定手段
5 温度制御手段
6 ヒータ駆動手段
7 記憶手段
W ウエハ
Claims (7)
- 処理容器内に設けられた回転テーブルの表面に基板を載置し、回転テーブルを回転させながら加熱手段により基板を加熱して所定の成膜処理を行う熱処理装置であって、
前記加熱手段の温度を測定する接触型の第1の温度測定手段と、
前記回転テーブルが回転している状態で、前記回転テーブルに載置された基板の温度を測定する非接触型の第2の温度測定手段と、
前記第1の温度測定手段により測定される第1の測定値と前記第2の温度測定手段により測定される第2の測定値とに基づいて、前記加熱手段を制御する温度制御手段と
を備える、
熱処理装置。 - 前記温度制御手段は、前記第1の測定値と前記第2の測定値との間の相関関係を記憶手段に記憶し、前記記憶手段に記憶された相関関係に基づいて、前記加熱手段を制御する、
請求項1に記載の熱処理装置。 - 前記温度制御手段は、前記第2の温度測定手段により測定される温度を前記所定の成膜処理を行うときの温度条件になるように前記加熱手段を制御した後、前記第1の測定値と前記第2の測定値との間の相関関係を前記記憶手段に記憶する、
請求項2に記載の熱処理装置。 - 前記温度制御手段は、前記第2の温度測定手段により測定される温度を前記所定の成膜処理を行うときの複数の温度条件に対応させて変更し、前記複数の温度条件の各々における前記第1の測定値と前記第2の測定値との間の相関関係を前記記憶手段に記憶する、
請求項2に記載の熱処理装置。 - 前記第2の温度測定手段は、前記基板の表面から放射される赤外線を検出することで前記基板の温度を測定する、
請求項1乃至4のいずれか一項に記載の熱処理装置。 - 前記第2の温度測定手段は、前記回転テーブルの径方向に沿った方向の複数の領域における温度を測定する、
請求項1乃至5のいずれか一項に記載の熱処理装置。 - 処理容器内に設けられた回転テーブルの表面に基板を載置し、回転テーブルを回転させながら加熱手段により基板を加熱して所定の成膜処理を行う熱処理装置に用いられる温度制御方法であって、
前記回転テーブルに基板を載置する載置ステップと、
前記加熱手段の温度を接触型の第1の温度測定手段により測定する第1の温度測定ステップと、
前記回転テーブルが回転している状態で、前記回転テーブルに載置された基板の温度を非接触型の第2の温度測定手段により測定する第2の温度測定ステップと、
前記第1の温度測定ステップで測定された第1の測定値と前記第2の温度測定ステップで測定された第2の測定値とに基づいて、前記加熱手段を制御する温度制御ステップと
を含む、
温度制御方法。
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