JP2016528674A - 光電素子用基板およびこれを含む光電素子 - Google Patents
光電素子用基板およびこれを含む光電素子 Download PDFInfo
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- JP2016528674A JP2016528674A JP2016523663A JP2016523663A JP2016528674A JP 2016528674 A JP2016528674 A JP 2016528674A JP 2016523663 A JP2016523663 A JP 2016523663A JP 2016523663 A JP2016523663 A JP 2016523663A JP 2016528674 A JP2016528674 A JP 2016528674A
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- 239000000758 substrate Substances 0.000 title claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 91
- 239000002131 composite material Substances 0.000 claims description 22
- 239000002356 single layer Substances 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 229910021389 graphene Inorganic materials 0.000 claims description 7
- 238000002834 transmittance Methods 0.000 claims description 4
- 229910016001 MoSe Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 abstract description 13
- 239000010408 film Substances 0.000 description 15
- 238000000149 argon plasma sintering Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000005354 aluminosilicate glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000002365 multiple layer Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
- H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/549—Organic PV cells
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Abstract
Description
110、210 ベース基板
120 凹凸構造物
130 平坦化層
211 凹凸構造物
10、20 光電素子
11 有機・無機複合層
Claims (11)
- ベース基板と、
前記ベース基板上に形成され、表面が凹凸構造をなす凹凸構造物、および
前記凹凸構造物上に形成され、二次元物質(2-dimensional material)からなる平坦化層と、
を含むことを特徴とする光電素子用基板。 - 前記ベース基板と前記凹凸構造物とは、一体または別体で形成されることを特徴とする請求項1に記載の光電素子用基板。
- 前記二次元物質は、グラフェン(graphene)、MoS2、MoSe2、hBN、およびWSe2のいずれかからなることを特徴とする請求項1に記載の光電素子用基板。
- 前記平坦化層は、シート状に形成されていることを特徴とする請求項1に記載の光電素子用基板。
- 前記平坦化層は、単層またはn個の前記単層が積層されてなる多層からなるものであることを特徴とする請求項1に記載の光電素子用基板。
ただし、前記nは自然数である。 - 前記単層は、0.3〜0.9nmの厚さを有することを特徴とする請求項5に記載の光電素子用基板。
- 前記多層は、5nm以下の厚さを有することを特徴とする請求項6に記載の光電素子用基板。
- 前記平坦化層は、90%以上の透過率を有することを特徴とする請求項1に記載の光電素子用基板。
- 請求項1に記載の光電素子用基板、および
前記光電素子用基板の平坦化層に接する有機・無機複合層、
を含むことを特徴とする光電素子。 - 前記光電素子は有機発光素子であることを特徴とする請求項9に記載の光電素子。
- 前記光電素子は光電池であることを特徴とする請求項9に記載の光電素子。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR20130077787A KR101487729B1 (ko) | 2013-07-03 | 2013-07-03 | 광전소자용 기판 및 이를 포함하는 광전소자 |
KR10-2013-0077787 | 2013-07-03 | ||
PCT/KR2014/005908 WO2015002461A1 (ko) | 2013-07-03 | 2014-07-02 | 광전소자용 기판 및 이를 포함하는 광전소자 |
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JP2016528674A true JP2016528674A (ja) | 2016-09-15 |
JP6350655B2 JP6350655B2 (ja) | 2018-07-04 |
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JP2016523663A Expired - Fee Related JP6350655B2 (ja) | 2013-07-03 | 2014-07-02 | 光電素子用基板およびこれを含む光電素子 |
Country Status (6)
Country | Link |
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US (1) | US9960373B2 (ja) |
EP (1) | EP3018721B1 (ja) |
JP (1) | JP6350655B2 (ja) |
KR (1) | KR101487729B1 (ja) |
CN (1) | CN105453292B (ja) |
WO (1) | WO2015002461A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102045064B1 (ko) * | 2018-09-20 | 2019-11-14 | 울산과학기술원 | 양자 광원 및 그 제조 방법 |
Families Citing this family (11)
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KR101732943B1 (ko) | 2015-06-25 | 2017-05-24 | 한국과학기술연구원 | 이차원 전이금속 디칼코겐 화합물을 발광층으로 하는 발광소자와 그 제조방법 |
KR20190016189A (ko) | 2017-08-08 | 2019-02-18 | 한국과학기술연구원 | 이차원 전이금속 디칼코제나이드를 이용한 유기 태양전지 및 이의 제조방법 |
KR101975670B1 (ko) | 2017-09-12 | 2019-05-07 | 경북대학교 산학협력단 | 광흡수 유기광전소자 및 그 제조방법 |
CN108254817B (zh) * | 2018-01-23 | 2019-08-09 | 福州大学 | 一种金/二氧化硅壳核微结构与二硫化钼复合光学膜的制备方法 |
KR102558858B1 (ko) | 2018-05-28 | 2023-07-21 | 코닝 인코포레이티드 | 유기발광장치의 광추출기판 및 그 제조방법 |
US11136666B2 (en) | 2018-08-30 | 2021-10-05 | University Of Kentucky Research Foundation | Ordered nanotubes on a two-dimensional substrate consisting of different material properties |
KR102151403B1 (ko) | 2019-07-26 | 2020-09-03 | 한국과학기술연구원 | 이차원 전이금속 디칼코제나이드를 이용한 유기 태양전지의 제조방법 |
KR102247414B1 (ko) * | 2019-12-27 | 2021-05-03 | 경희대학교 산학협력단 | 광결정 구조를 이용한 광원 |
KR20220009216A (ko) | 2020-07-15 | 2022-01-24 | 삼성전자주식회사 | 발광 소자, 발광 소자의 제조 방법, 및 발광 소자를 포함하는 디스플레이 장치 |
CN111816781B (zh) * | 2020-08-21 | 2023-09-01 | 京东方科技集团股份有限公司 | 一种有机电致发光器件及其制备方法、显示装置 |
CN112786751A (zh) * | 2021-01-19 | 2021-05-11 | 中国科学院长春光学精密机械与物理研究所 | 一种n极性氮化物模板、n极性氮化物器件及其制备方法 |
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- 2014-07-02 EP EP14819503.5A patent/EP3018721B1/en active Active
- 2014-07-02 CN CN201480043805.2A patent/CN105453292B/zh active Active
- 2014-07-02 WO PCT/KR2014/005908 patent/WO2015002461A1/ko active Application Filing
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Publication number | Publication date |
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JP6350655B2 (ja) | 2018-07-04 |
KR101487729B1 (ko) | 2015-01-29 |
EP3018721A1 (en) | 2016-05-11 |
KR20150004606A (ko) | 2015-01-13 |
WO2015002461A1 (ko) | 2015-01-08 |
EP3018721A4 (en) | 2017-03-08 |
US9960373B2 (en) | 2018-05-01 |
CN105453292B (zh) | 2020-03-31 |
CN105453292A (zh) | 2016-03-30 |
US20160301022A1 (en) | 2016-10-13 |
EP3018721B1 (en) | 2021-09-01 |
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