JP2016518697A - GaNベースのオプトエレクトロニックデバイスおよび電子デバイス用の酸素制御したPVDAlNバッファ - Google Patents
GaNベースのオプトエレクトロニックデバイスおよび電子デバイス用の酸素制御したPVDAlNバッファ Download PDFInfo
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- 239000000872 buffer Substances 0.000 title claims abstract description 72
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 54
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 114
- 239000007789 gas Substances 0.000 claims abstract description 89
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
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- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
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- 229910010093 LiAlO Inorganic materials 0.000 claims description 2
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- 229910002601 GaN Inorganic materials 0.000 description 147
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 147
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 12
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- 229910052801 chlorine Inorganic materials 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 11
- 239000002131 composite material Substances 0.000 description 11
- 238000003860 storage Methods 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 9
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- 229910052733 gallium Inorganic materials 0.000 description 9
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- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 5
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- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- -1 nitrogen-containing compound Chemical class 0.000 description 3
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- WYEMLYFITZORAB-UHFFFAOYSA-N boscalid Chemical compound C1=CC(Cl)=CC=C1C1=CC=CC=C1NC(=O)C1=CC=CN=C1Cl WYEMLYFITZORAB-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
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- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32467—Material
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
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- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L31/1856—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising nitride compounds, e.g. GaN
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Abstract
Description
本願は、その内容全体をここに参照により本明細書に組み込む、2013年3月14日出願の、米国仮出願第61/785,128号の利益を主張する。
Claims (25)
- GaNベースのオプトエレクトロニックデバイスまたは電子デバイス用の窒化アルミニウム(AlN)緩衝層を形成する方法であって、
基板の上にAlN層を反応性スパッタリングすることであって、物理的気相堆積(PVD)チャンバ内に収納されたアルミニウム含有ターゲットを、窒素含有ガスまたは窒素含有ガスをベースとするプラズマと反応させることを備える、反応性スパッタリングすること、および
前記AlN層に酸素を混入させること
を備える方法。 - 前記酸素を混入させることが、O2、H2O、CO、CO2、NO、NO2、O3、およびその組合せからなる群から選択された酸素含有ガスの前記PVDチャンバへの流入によって行われる、請求項1に記載の方法。
- 前記酸素を混入させることが、前記アルミニウム含有ターゲットを前記窒素含有ガスまたは窒素含有ガスをベースとする前記プラズマと反応させる前の、酸素含有ガスの流入によって行われる、請求項1に記載の方法。
- 前記酸素を混入させることが、前記アルミニウム含有ターゲットを前記窒素含有ガスまたは窒素含有ガスをベースとする前記プラズマと反応させている間の、酸素含有ガスの流入によって行われる、請求項1に記載の方法。
- 前記酸素を混入させることが、前記アルミニウム含有ターゲットを前記窒素含有ガスまたは窒素含有ガスをベースとする前記プラズマと反応させた後の、酸素含有ガスの流入によって行われる、請求項1に記載の方法。
- 前記AlN層に酸素を混入させることが、前記AlN層に、およそ1×1018〜1×1023cm−3の範囲内の酸素濃度を混入させることを備える、請求項1に記載の方法。
- 基板と、
前記基板の上に配設された窒化アルミニウム(AlN)緩衝層であって、およそ1×1018〜1×1023cm−3の範囲内の酸素濃度を備えるAlN層と
を備える、GaNベースのオプトエレクトロニックデバイスまたは電子デバイス用の材料積層体。 - 前記酸素の一部が、AlN/基板界面に含まれる、請求項7に記載の材料積層体。
- 前記酸素の一部が、前記AlN緩衝層の最も外側の表面に含まれる、請求項7に記載の材料積層体。
- 前記AlN緩衝層上に配設された高品質のGaN層であって、XRD(002)FWHM<100秒角およびXRD(102)FWHM<150秒角を有する、高品質のGaN層
をさらに備える、請求項7に記載の材料積層体。 - 前記基板が、サファイア、Si、SiC、Siオンダイヤモンド、ZnO、LiAlO2、MgO、GaAs、銅、およびWからなる群から選択される、請求項7に記載の材料積層体。
- 基板と、
前記基板の上に配設された窒化アルミニウム(AlN)緩衝層であって、およそ1×1018〜1×1023cm−3の範囲内の酸素濃度を備えるAlN層と
を備える、発光ダイオード(LED)デバイス。 - 前記酸素の一部が、AlN/基板界面に含まれる、請求項12に記載のLEDデバイス。
- 前記酸素の一部が、前記AlN緩衝層の最も外側の表面に含まれる、請求項12に記載のLEDデバイス。
- 前記AlN緩衝層上に配設された高品質のGaN層であって、XRD(002)FWHM<100秒角およびXRD(102)FWHM<150秒角を有する、高品質のGaN層
をさらに備える、請求項12に記載のLEDデバイス。 - 基板と、
前記基板の上に配設された窒化アルミニウム(AlN)緩衝層であって、およそ1×1018〜1×1023cm−3の範囲内の酸素濃度を備えるAlN層と
を備える、GaNベースの電子デバイス。 - 電界効果トランジスタ(FET)およびパワーデバイスからなる群から選択されたものである、請求項16に記載のGaNベースの電子デバイス。
- 前記酸素の一部が、AlN/基板界面に含まれる、請求項16に記載のGaNベースの電子デバイス。
- 前記酸素の一部が、前記AlN緩衝層の最も外側の表面に含まれる、請求項16に記載のGaNベースの電子デバイス。
- 前記AlN緩衝層上に配設された高品質のGaN層であって、XRD(002)FWHM<100秒角およびXRD(102)FWHM<150秒角を有する、高品質のGaN層
をさらに備える、請求項16に記載のGaNベースの電子デバイス。 - GaNベースのオプトエレクトロニックデバイスまたは電子デバイス用の窒化アルミニウム(AlN)緩衝層を形成するためのチャンバであって、
高温下における1×10−7torr以下の高い基礎真空および低い上昇速度を可能にする、ポンピングシステムおよびチャンバ冷却設計と、
一貫したターゲット浸食、およびキャリアにわたる、ウエハ内での、またウエハ相互間の、AlN膜の均一な堆積を可能にするように構成された、全面浸食マグネトロンカソードと、
均一なAlN組成物が得られるように、前記チャンバ内でのO含有ガスを含むプロセスガスの均一な分配を可能にするように構成された、プロセスキットおよびガス流設計と
を備える、チャンバ。 - ウエハの速く均一な昇温を可能にするように構成された、バイアス可能な高温静電チャック
をさらに備える、請求項21に記載のチャンバ。 - 酸素をドープしたAlターゲット
をさらに備える、請求項21に記載のチャンバ。 - 前記チャンバ真空上昇速度が、2,500ntorr/分以下である、請求項21に記載のチャンバ。
- 前記高温が、およそ摂氏350度以上である、請求項21に記載のチャンバ。
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US11081623B2 (en) | 2021-08-03 |
US10546973B2 (en) | 2020-01-28 |
KR20210156356A (ko) | 2021-12-24 |
KR20210010655A (ko) | 2021-01-27 |
US11575071B2 (en) | 2023-02-07 |
CN105121693A (zh) | 2015-12-02 |
KR102080926B1 (ko) | 2020-02-24 |
JP6325647B2 (ja) | 2018-05-16 |
KR102342796B1 (ko) | 2021-12-22 |
US20200127164A1 (en) | 2020-04-23 |
KR102455498B1 (ko) | 2022-10-14 |
KR102207804B1 (ko) | 2021-01-26 |
TW201436283A (zh) | 2014-09-16 |
US20160035937A1 (en) | 2016-02-04 |
US20140264363A1 (en) | 2014-09-18 |
US20210328104A1 (en) | 2021-10-21 |
US9929310B2 (en) | 2018-03-27 |
US20180261720A1 (en) | 2018-09-13 |
US10236412B2 (en) | 2019-03-19 |
US20190172973A1 (en) | 2019-06-06 |
KR20150131217A (ko) | 2015-11-24 |
WO2014143141A1 (en) | 2014-09-18 |
TWI624963B (zh) | 2018-05-21 |
US10193014B2 (en) | 2019-01-29 |
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