JP2016185574A - Mems element and manufacturing method of the same - Google Patents

Mems element and manufacturing method of the same Download PDF

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JP2016185574A
JP2016185574A JP2015066248A JP2015066248A JP2016185574A JP 2016185574 A JP2016185574 A JP 2016185574A JP 2015066248 A JP2015066248 A JP 2015066248A JP 2015066248 A JP2015066248 A JP 2015066248A JP 2016185574 A JP2016185574 A JP 2016185574A
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movable electrode
portion
electrode portion
forming
sacrificial layer
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JP6405276B2 (en
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新一 荒木
Shinichi Araki
新一 荒木
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新日本無線株式会社
New Japan Radio Co Ltd
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Abstract

A MEMS device capable of obtaining a large output signal and having a structurally strong structure and a method for manufacturing the same are provided.
A movable electrode plate on which a movable electrode is formed includes a first movable electrode portion 12 whose outer peripheral portion is fixed to a substrate, and a second movable electrode portion 17 whose outer peripheral portion is a free end. The first movable electrode portion and the second movable electrode portion are configured so as to be integrated with each other by connecting portions disposed at the center portions thereof.
[Selection] Figure 8

Description

  The present invention relates to a MEMS element and a manufacturing method thereof, and more particularly to a capacitive MEMS element used as a microphone, various sensors, and the like and a manufacturing method thereof.

  A micro electro mechanical systems (MEMS) element using a semiconductor process forms a movable electrode, a sacrificial layer, and a fixed electrode on a semiconductor substrate, and then removes a part of the sacrificial layer so that the fixed electrode and the fixed electrode are interposed via a spacer. An air gap (hollow) structure is formed between the movable electrode.

  For example, in a capacitive MEMS element, a fixed electrode having a plurality of through-holes and a movable electrode that vibrates in response to sound pressure or the like are arranged opposite to each other, and displacement of the movable electrode due to vibration changes in capacitance between the electrodes. Is detected. This type of MEMS element is described in Patent Document 1, for example.

  The operation of the conventional MEMS element is schematically shown in FIG. When the fixed electrode plate 1 including the conductive fixed electrode and the movable electrode plate 2 including the conductive movable electrode are arranged via the spacer 3 and the movable electrode plate 2 vibrates by receiving sound pressure or the like, the fixed electrode plate 1 And the capacitance value of the capacitor formed between the fixed electrode of the fixed electrode plate 1 and the fixed electrode of the movable electrode plate 2 changes. By taking out this capacitance value from an electrode (not shown), it is possible to obtain an output signal corresponding to the sound pressure received by the movable electrode plate 2.

JP 2011-55087 A

  By the way, in this type of MEMS element, as shown in FIG. 9, the movable electrode plate 2 that has received sound pressure or the like is sandwiched and fixed between the spacer 3 and the insulating film 4 formed on the substrate 5. The amount of displacement at the center is large and the amount of displacement at the outer periphery is small.

  When the movable electrode plate 2 is curved and deformed in this manner, the movable electrode formed on the movable electrode plate 2 is similarly deformed and does not become a parallel plate electrode with respect to the fixed electrode. For this reason, when the movable electrode and the fixed electrode are closer, there is a problem that the output signal cannot be taken out largely because the proximity amount on the outer peripheral side is insufficient. An object of the present invention is to provide a MEMS element which can solve such problems, obtain a large output signal, and is structurally strong, and a manufacturing method thereof.

  In order to achieve the above object, the present invention according to claim 1 of the present application includes a substrate including a back chamber, a fixed electrode plate including a fixed electrode and a movable electrode on the substrate with a spacer interposed therebetween. In the MEMS element in which the electrode plate is disposed so as to face the movable electrode plate, the movable electrode plate includes a first movable electrode portion fixed to the substrate and an outer peripheral portion as a free end via a connecting portion to the first movable electrode portion. A second movable electrode portion including the movable electrode fixed and opposed to the fixed electrode, wherein the connecting portion is disposed at a central portion of each of the first movable electrode portion and the second movable electrode portion. And a conductive member serving as a conductive path of the second movable electrode portion passes therethrough, the first movable electrode portion vibrates and the second movable electrode portion vibrates, and the fixed electrode and the Based on the change in capacitance value with the movable electrode And outputs the Ku signal.

  The invention according to claim 2 of the present application is characterized in that, in the MEMS element according to claim 1, the connecting portion is provided with a reinforcing member.

  In the invention according to claim 3 of the present application, a movable electrode plate including a movable electrode is formed on a substrate, a sacrificial layer is formed on the movable electrode plate, and a fixed electrode plate including a fixed electrode is formed on the sacrificial layer. Thereafter, in the method of manufacturing a MEMS element including a step of forming an air gap between the movable electrode plate and the fixed electrode plate by removing the sacrificial layer, a first part of the movable electrode plate is configured. A step of forming one movable electrode portion, a step of forming a first sacrificial layer on the first movable electrode portion, and after removing a part of the first sacrificial layer in the connection portion formation scheduled region Forming a second movable electrode portion including the movable electrode and constituting a part of the movable electrode plate, which communicates with the first movable electrode portion at a connecting portion on the first sacrificial layer; Forming a second sacrificial layer on the second movable electrode portion; and the second sacrificial layer And forming the fixed electrode plate on the first sacrificial layer and the second sacrificial layer so that the air gap is formed so that at least the outer peripheral portion of the second movable electrode portion becomes a free end. And a step of removing a part thereof.

  The invention according to claim 4 of the present application is characterized in that, in the method of manufacturing a MEMS element according to claim 3, the method includes a step of forming a reinforcing member on the second movable electrode portion of the connecting portion.

  In the MEMS element of the present invention, a large output signal can be obtained because the second movable electrode portion is displaced while maintaining a flat plate shape on the opposed fixed electrode regardless of the displacement of the movable electrode. In particular, by arranging the connecting portion between the first movable electrode portion and the second movable electrode portion at the center of the movable electrode portion having the largest displacement, the vibration of the first movable electrode portion is directly applied to the second movable electrode. Therefore, a MEMS element with excellent characteristics can be provided.

  In addition, the MEMS element of the present invention can add a reinforcing member to increase the mechanical strength at the connecting portion between the first movable electrode portion and the second movable electrode portion, and provides a highly reliable MEMS device. There is also an advantage of being able to do it.

  In the MEMS element manufacturing method of the present invention, a first sacrificial layer forming process and a second movable electrode part patterning process are added to the conventional MEMS element manufacturing process as the second movable electrode part manufacturing process. However, the removal of the first sacrificial layer can be performed simultaneously with the removal of the second sacrificial layer for forming the spacer, and the manufacturing cost is not significantly increased.

  Moreover, the manufacturing method of the MEMS element of this invention adds the process of forming a reinforcement member, and the mechanical strength of the connection part of a 1st movable electrode part and a 2nd movable electrode part increases, and its reliability is high. There is an advantage that a MEMS element can be provided.

It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is explanatory drawing of the manufacturing process of the capacitor | condenser microphone of the Example of this invention. It is a figure explaining operation | movement of the capacitor | condenser microphone of the Example of this invention. It is a figure explaining operation | movement of a general MEMS element.

  The MEMS element of the present invention includes a first movable electrode portion in which a movable electrode plate on which a movable electrode is formed has an outer peripheral portion fixed to a substrate, a second movable electrode portion in which the outer peripheral portion is a free end, The first movable electrode portion and the second movable electrode portion are configured so as to be integrated with each other at a central portion.

  With this configuration, for example, when receiving a sound pressure, when the second movable electrode portion vibrates together with the first movable electrode portion, the outer periphery of the second movable electrode portion is a free end. The shape faces the fixed electrode in a state where the shape does not change (a state of a parallel plate). As a result, the output signal based on the capacitance value of the capacitor formed between the movable electrode and the fixed electrode has a linear characteristic up to a large displacement compared to the conventional case. Hereinafter, the present invention will be described in detail with reference to examples.

  An embodiment of the present invention will be described by taking a condenser microphone as an example of a MEMS element. In the capacitor microphone of the present invention, first, a thermal oxide film 11 having a thickness of about 1 μm is formed on a silicon substrate 10 having a crystal orientation (100) plane of 420 μm in thickness, and the thermal oxide film 11 is formed on the thermal oxide film 11 by a CVD method. A conductive polysilicon film having a thickness of about 0.2 to 2.0 μm is stacked. Next, the conductive polysilicon film is patterned by a normal photolithography method to form the first movable electrode portion 12. In some cases, the movable electrode 12 is formed with a slit 13 or a sticking prevention protrusion 14 for improving sensitivity, preventing damage, or the like (FIG. 1). The slit 13 can be formed by a normal photolithographic method. The anti-sticking protrusion 14 is formed, for example, by forming a cylindrical pillar made of a nitride film in a region where the anti-sticking protrusion 14 is to be formed. By etching the pillar and stopping the etching before it is completely removed, a conical protrusion can be formed as shown in the figure.

  A sacrificial layer 15 (corresponding to the first sacrificial layer) made of a USG film having a thickness of about 1.0 to 2.0 μm is stacked on the entire surface. Thereafter, a part of the sacrificial layer 15 at the central portion, which will be a connection part formation scheduled area, which will be described later, is removed, an opening 16 is formed, and a part of the first movable electrode part 12 is exposed in the opening 16. . For example, about four cylindrical openings 16 are formed and covered with a conductive polysilicon film having a thickness of about 0.2 to 2.0 μm to fill the openings 16 with a conductive polysilicon film. Next, the conductive polysilicon film is patterned by a normal photolithography method to form the second movable electrode portion 17 (FIG. 2).

  Here, it is possible to form the anti-sticking protrusion 14 formed earlier on the second movable electrode portion 17 side. In this case, after forming the sacrificial layer 15, a part of the surface of the sacrificial layer 15 in the anti-sticking projection formation region is removed in a concave shape, and a conductive polysilicon film is formed thereon, followed by patterning. As a result, a sticking prevention protrusion can be formed on the surface facing the first movable electrode portion 12.

  It is not always necessary to form the anti-sticking protrusions 14 on the opposing surfaces of the first movable electrode portion 12 and the second movable electrode portion 17, but the first movable electrode portion 12 and the second movable electrode portion 12 These movable electrode portions 17 are opposed to each other at a very narrow interval, and therefore sticking is likely to occur. Therefore, it is effective to form the anti-sticking protrusions 14 in order to improve the manufacturing yield.

  As shown in FIG. 2, the second movable electrode portion 17 and the first movable electrode portion 12 are electrically connected to each other with the opening portion 16 serving as a contact hole, and the second movable electrode portion 17 is connected to the fixed electrode. Functions as a movable electrode. Therefore, the first movable electrode portion 12 formed previously only needs to function as an extraction electrode of the second movable electrode portion 17, and the first movable electrode portion 12 does not necessarily have to be a conductive film.

  When the first movable electrode portion 12 is deformed by receiving the sound pressure, the connecting portion including the opening portion 16 is very easily damaged by applying a large stress. Therefore, as shown in FIG. 3, the inside of the concave portion that remains without being flattened in the central portion when covering the connecting portion (FIG. 3a) or when the opening 16 formed earlier is filled with a conductive film (FIG. 3). It is also possible to form the reinforcing member 18 in 3b). The reinforcing member 18 may be appropriately selected in order to increase the mechanical strength. For example, when selecting a material having higher hardness than the conductive polysilicon film, silicon nitride can be selected. FIG. 3 (a) shows a reinforcement formed by forming a silicon nitride film on the entire surface and then leaving the silicon nitride film at the connecting portion by a normal photolithographic method so that the silicon nitride film is buried in the recess and further covers the surface. The member 18 is shown. The following description demonstrates the case where the reinforcement member 18 of this structure is formed. As the reinforcing member, quartz or alumina can be selected in addition to silicon nitride.

  Thereafter, a sacrificial layer 19 (corresponding to the second sacrificial layer) made of a USG film having a thickness of about 2.0 to 5.0 μm serving as a spacer is formed on the second movable electrode portion 17 in accordance with a normal manufacturing method. Further, a conductive polysilicon film having a thickness of about 0.1 to 1.0 μm is formed on the sacrificial layer 19 by lamination. The conductive polysilicon film is patterned by a normal photolithography method to form the fixed electrode 20 (FIG. 4).

  A silicon nitride film is further laminated on the fixed electrode 20 by a low pressure CVD method to form a back plate 21 (corresponding to the fixed electrode plate) integrated with the fixed electrode 20. A through hole 22 is formed in the back plate 21, and a part of the sacrificial layer 19 is exposed (FIG. 5).

  After that, the back chamber 23 is formed by etching the silicon substrate 1 from the back side using the RIE apparatus (FIG. 6). Finally, a part of the sacrificial layers 19 and 15 is etched from the through hole 22 to form a MEMS element in which the fixed electrode 20 and the second movable electrode portion 17 face each other through the spacer 24 (FIG. 7). Here, it is not always necessary to remove all the sacrificial layer 15 in the vicinity of the connecting portion, and there is no problem if it remains as a part of the connecting portion.

  The operation of the movable electrode thus formed will be described in detail with reference to FIG. The first movable electrode portion 12 that directly receives sound pressure vibrates according to the magnitude of the sound pressure. At that time, since the outer peripheral portion of the first movable electrode portion 12 is fixed by the thermal oxide film 11 and the spacer 24, the first movable electrode portion 12 has a curved shape as described above in the conventional example. On the other hand, the second movable electrode portion 17 integrated with the first movable electrode 12 via the connecting portion vibrates in accordance with the sound pressure received by the first movable electrode portion 12. At that time, since the outer peripheral portion of the second movable electrode portion 17 is a free end, the second movable electrode portion 17 is displaced toward the fixed electrode 20 side with almost no change in its shape. As a result, an output signal that changes the capacitance value of the capacitor formed between the second movable electrode portion 17 and the fixed electrode 20 can be obtained from an electrode (not shown). For example, even when the first movable electrode portion 12 is greatly displaced due to an input of a large volume, the second movable electrode portion 17 is not deformed such as being curved. As a result, a large output signal is obtained.

  As described above, according to the present invention, a MEMS element having excellent characteristics can be easily formed by including the second movable electrode portion functioning as a parallel plate electrode. Needless to say, the present invention is not limited to the above embodiments. For example, the electrode including the second movable electrode portion is not limited to polysilicon, but a single crystal, amorphous or polycrystalline semiconductor (silicon, germanium, gallium arsenide, indium phosphide, silicon germanium), or a compound semiconductor such as gallium arsenide. A metal alloy such as aluminum can be used to form a conductive material by implanting impurity ions. The material constituting the electrode can be appropriately selected as long as the sacrificial layers 15 and 19 can be selectively removed. Also, it can be used as various sensors other than the microphone.

1: fixed electrode plate, 2: movable electrode plate, 3: spacer, 4: substrate, 5: insulating film,
10: substrate, 11: thermal oxide film, 12: first movable electrode portion, 13: slit, 14: protrusion for preventing sticking, 15: sacrificial layer, 16: opening, 17: second movable electrode portion, 18: reinforcement member, 19: sacrificial layer, 20: fixed electrode, 21: back plate, 22: through hole, 23: back chamber, 24: spacer

Claims (4)

  1. In a MEMS device in which a substrate provided with a back chamber, and a fixed electrode plate including a fixed electrode and a movable electrode plate including a movable electrode are opposed to each other on the substrate with a spacer interposed therebetween.
    The movable electrode plate has a first movable electrode portion fixed to the substrate and an outer peripheral portion serving as a free end, and is fixed to the first movable electrode portion via a connecting portion and faces the fixed electrode. A second movable electrode portion including an electrode,
    The connecting portion is disposed in the center of each of the first movable electrode portion and the second movable electrode portion, and a conductive member serving as a conductive path of the second movable electrode portion passes therethrough.
    The MEMS element characterized in that the first movable electrode portion vibrates and the second movable electrode portion vibrates and outputs a signal based on a change in capacitance value between the fixed electrode and the movable electrode. .
  2. The MEMS element according to claim 1, wherein the connecting portion includes a reinforcing member.
  3. Forming a movable electrode plate including a movable electrode on a substrate, forming a sacrificial layer on the movable electrode plate, forming a fixed electrode plate including a fixed electrode on the sacrificial layer, and then removing the sacrificial layer; In the method for manufacturing a MEMS element including a step of forming an air gap between the movable electrode plate and the fixed electrode plate,
    Forming a first movable electrode portion constituting a part of the movable electrode plate;
    Forming a first sacrificial layer on the first movable electrode portion;
    The movable electrode including the movable electrode, which is connected to the first movable electrode portion at the connection portion on the first sacrifice layer after removing a part of the first sacrifice layer in the connection portion formation scheduled region Forming a second movable electrode portion constituting a part of the plate;
    Forming a second sacrificial layer on the second movable electrode portion;
    Forming the fixed electrode plate on the second sacrificial layer;
    Removing the first sacrificial layer and a part of the second sacrificial layer so that at least the outer peripheral portion of the second movable electrode portion becomes a free end and the air gap is formed. A method for manufacturing a MEMS element, which is characterized.
  4.   4. The method for manufacturing a MEMS element according to claim 3, further comprising a step of forming a reinforcing member on the second movable electrode portion of the second connecting portion.
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0943083A (en) * 1995-08-02 1997-02-14 Omron Corp Capacitance-type pressure sensor, and hemadynamometer, pressure measuring device and gas meter using the same
US20100072561A1 (en) * 2008-09-22 2010-03-25 Solid State System Co., Ltd. Method for fabricating micro-electro-mechanical system (mems) device
EP2211156A2 (en) * 2009-01-26 2010-07-28 Robert Bosch GmbH Micro-mechanical capacitative pressure sensor and method for manufacturing same
JP2011055087A (en) * 2009-08-31 2011-03-17 New Japan Radio Co Ltd Mems microphone and method of manufacturing the same
JP2014533983A (en) * 2011-10-07 2014-12-18 スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park Intraocular pressure sensor and manufacturing method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0943083A (en) * 1995-08-02 1997-02-14 Omron Corp Capacitance-type pressure sensor, and hemadynamometer, pressure measuring device and gas meter using the same
US20100072561A1 (en) * 2008-09-22 2010-03-25 Solid State System Co., Ltd. Method for fabricating micro-electro-mechanical system (mems) device
EP2211156A2 (en) * 2009-01-26 2010-07-28 Robert Bosch GmbH Micro-mechanical capacitative pressure sensor and method for manufacturing same
JP2011055087A (en) * 2009-08-31 2011-03-17 New Japan Radio Co Ltd Mems microphone and method of manufacturing the same
JP2014533983A (en) * 2011-10-07 2014-12-18 スンシル ユニバーシティー リサーチ コンソルティウム テクノーパークSoongsil University Research Consortium Techno−Park Intraocular pressure sensor and manufacturing method thereof

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