JP2016119454A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016119454A5 JP2016119454A5 JP2015217792A JP2015217792A JP2016119454A5 JP 2016119454 A5 JP2016119454 A5 JP 2016119454A5 JP 2015217792 A JP2015217792 A JP 2015217792A JP 2015217792 A JP2015217792 A JP 2015217792A JP 2016119454 A5 JP2016119454 A5 JP 2016119454A5
- Authority
- JP
- Japan
- Prior art keywords
- emitting device
- light
- phosphor layer
- semiconductor element
- optical semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 11
- 230000003287 optical Effects 0.000 claims 10
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000000758 substrate Substances 0.000 claims 3
Claims (10)
第一側面及び第一厚さを含む光半導体素子と、
前記光半導体素子の上に設置されており、且つ前記第一側面を覆う第二側面及び前記光半導体素子の上に位置する第二厚さを含む蛍光体層と、
前記蛍光体層の上に設置されており、且つ前記第一側面と前記第二側面とを覆う第三側面及び第三厚さを含む透明層と、を含み、
前記第二厚さと前記第一厚さとの比は、１以上５以下である、発光装置。 A light emitting device,
An optical semiconductor element comprising a first side and a first thickness ;
A phosphor layer disposed on the optical semiconductor element and including a second side surface covering the first side surface and a second thickness positioned on the optical semiconductor element ;
A transparent layer disposed on the phosphor layer and including a third side surface and a third thickness covering the first side surface and the second side surface ;
The ratio of said 2nd thickness and said 1st thickness is a light-emitting device which is 1-5.
前記蛍光体層は、屈折率ＲＩｐが１．４５以上１．６０以下である第一透明組成物を含む、発光装置。 The phosphor layer includes a first transparent composition having a refractive index RIp of 1.45 or more and 1.60 or less.
前記光半導体素子、前記蛍光体層、及び前記透明層を載置する基板を更に含む、発光装置。 The light emitting device further comprising a substrate on which the optical semiconductor element, the phosphor layer, and the transparent layer are placed.
前記第二厚さと前記第三厚さとの総和は、０．２５ｎｍ以上２ｍｍ以下である、発光装置。 The sum total of said 2nd thickness and said 3rd thickness is a light-emitting device which is 0.25 nm or more and 2 mm or less.
第一側面を含む光半導体素子と、 An optical semiconductor element including a first side;
前記光半導体素子を覆い、且つ第二側面を含む蛍光体層と、 A phosphor layer covering the optical semiconductor element and including a second side surface;
前記蛍光体層及び前記光半導体素子を覆い、且つ第三側面を含む透明層と、を含み、 A transparent layer that covers the phosphor layer and the optical semiconductor element and includes a third side surface;
前記第一側面と前記第二側面との間の距離と、前記第二側面と前記第三側面との間の距離との総和は、５０μｍ以上２０００μｍ以下である、発光装置。 The total of the distance between said 1st side surface and said 2nd side surface, and the distance between said 2nd side surface and said 3rd side surface is a light-emitting device which is 50 micrometers or more and 2000 micrometers or less.
前記第二側面は、前記第一側面を超えている、発光装置。 The light emitting device, wherein the second side surface exceeds the first side surface.
前記蛍光体層は、屈折率ＲＩｐが１．４５以上１．６０以下である第一透明組成物を含む、発光装置。 The phosphor layer includes a first transparent composition having a refractive index RIp of 1.45 or more and 1.60 or less.
前記蛍光体層は、厚さを含み、 The phosphor layer includes a thickness;
前記厚さと、前記第一側面と前記第二側面との間の距離との比は、１以上２．５以下である、発光装置。 The ratio between the thickness and the distance between the first side surface and the second side surface is 1 to 2.5.
基板と、 A substrate,
前記基板の上に設置されている光半導体素子と、 An optical semiconductor element installed on the substrate;
前記光半導体素子を覆い、且つ第一屈折率を有する第一透明組成物を含む蛍光体層と、 A phosphor layer covering the optical semiconductor element and including a first transparent composition having a first refractive index;
前記蛍光体層及び前記光半導体素子を覆い、且つ第二屈折率を有する第二透明組成物を含む透明層と、を含み、 A transparent layer covering the phosphor layer and the optical semiconductor element and including a second transparent composition having a second refractive index,
前記第一屈折率は、前記第二屈折率よりも大きく、且つ前記第一屈折率と前記第二屈折率との差は、０．０５よりも大きい、発光装置。 The light emitting device, wherein the first refractive index is greater than the second refractive index, and a difference between the first refractive index and the second refractive index is greater than 0.05.
前記蛍光体層は、前記第一側面を超えている第二側面を含む、発光装置。 The phosphor layer includes a second side surface that exceeds the first side surface.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW104142411A TWI692126B (en) | 2014-12-17 | 2015-12-16 | Optical semiconductor element covered with phosphor layer and manufacturing method thereof |
| TW109109349A TW202027302A (en) | 2014-12-17 | 2015-12-16 | Optical semiconductor element covered with phosphor layer and manufacturing method thereof |
| TW104220246U TWM537717U (en) | 2014-12-17 | 2015-12-16 | Optical semiconductor element covered with phosphor layer |
| PCT/JP2015/085268 WO2016098825A1 (en) | 2014-12-17 | 2015-12-16 | Method for producing covered optical semiconductor element |
| CN201521063247.4U CN205609569U (en) | 2014-12-17 | 2015-12-17 | Cover smooth semiconductor component who has fluorophor layer |
| CN201510955211.5A CN105720173A (en) | 2014-12-17 | 2015-12-17 | Light semiconductor component covered with fluorescent layer and manufacturing method thereof |
| CN201620978690.2U CN206003825U (en) | 2014-12-17 | 2015-12-17 | It is covered with the optical semiconductor of luminescent coating |
| TW104142536A TWI691102B (en) | 2014-12-17 | 2015-12-17 | Manufacturing method of coated optical semiconductor element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014255110 | 2014-12-17 | ||
| JP2014255110 | 2014-12-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016119454A JP2016119454A (en) | 2016-06-30 |
| JP2016119454A5 true JP2016119454A5 (en) | 2018-12-20 |
Family
ID=56244436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015217792A Pending JP2016119454A (en) | 2014-12-17 | 2015-11-05 | Fluorescent material layer coated optical semiconductor element and manufacturing method of the same |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2016119454A (en) |
| CN (2) | CN206003825U (en) |
| TW (3) | TW202027302A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6776859B2 (en) * | 2016-12-09 | 2020-10-28 | 日本電気硝子株式会社 | Manufacturing method of wavelength conversion member, wavelength conversion member and light emitting device |
| CN110869824A (en) | 2017-07-28 | 2020-03-06 | 道康宁东丽株式会社 | Optical member resin sheet, optical member including optical member resin sheet, layered body, or light-emitting device, and method for manufacturing optical member resin sheet |
| CN112563382A (en) * | 2019-09-25 | 2021-03-26 | 昆山科技大学 | White light LED structure and its manufacturing method |
| JP7239840B2 (en) | 2020-08-31 | 2023-03-15 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
| TWI789740B (en) * | 2021-04-13 | 2023-01-11 | 光感動股份有限公司 | Light-emitting diode packaging structure and manufacturing method of light-emitting diode packaging structure |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5104490B2 (en) * | 2007-04-16 | 2012-12-19 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
| CN102047452B (en) * | 2008-05-30 | 2013-03-20 | 夏普株式会社 | Light emitting device, planar light source, liquid crystal display device and method for manufacturing light emitting device |
| JP2010183035A (en) * | 2009-02-09 | 2010-08-19 | Toyoda Gosei Co Ltd | Light-emitting device |
| JP2013115088A (en) * | 2011-11-25 | 2013-06-10 | Citizen Holdings Co Ltd | Semiconductor light-emitting device |
| KR102183516B1 (en) * | 2012-07-05 | 2020-11-27 | 루미리즈 홀딩 비.브이. | Phosphor separated from led by transparent spacer |
-
2015
- 2015-11-05 JP JP2015217792A patent/JP2016119454A/en active Pending
- 2015-12-16 TW TW109109349A patent/TW202027302A/en unknown
- 2015-12-16 TW TW104220246U patent/TWM537717U/en unknown
- 2015-12-16 TW TW104142411A patent/TWI692126B/en active
- 2015-12-17 CN CN201620978690.2U patent/CN206003825U/en active Active
- 2015-12-17 CN CN201521063247.4U patent/CN205609569U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2015109252A5 (en) | ||
| JP2016119454A5 (en) | ||
| JP2014197522A5 (en) | Light emitting device | |
| JP2017134402A5 (en) | ||
| JP2014508329A5 (en) | ||
| JP2014209480A5 (en) | ||
| JP2012507831A5 (en) | ||
| JP2015180930A5 (en) | ||
| JP2012142270A5 (en) | Light emitting device | |
| JP2012186153A5 (en) | ||
| JP2014179457A5 (en) | ||
| JP2014067876A5 (en) | ||
| JP2014029853A5 (en) | ||
| JP2015109258A5 (en) | Light emitting device | |
| JP2016174148A5 (en) | ||
| EP2863446A3 (en) | Flexible organic light emitting diode display and manufacturing method thereof | |
| MX2022004907A (en) | Led display device. | |
| JP2016192295A5 (en) | ||
| JP2014209198A5 (en) | ||
| WO2012001478A3 (en) | Wafer-type light emitting device with precisely coated wavelength-conversion layer | |
| JP2014502775A5 (en) | ||
| JP2012199230A5 (en) | Light emitting device, lighting device, and substrate | |
| JP2018531517A5 (en) | ||
| JP2015008237A5 (en) | ||
| JP2013172147A5 (en) |