JP2016058566A - 電子半透鏡デバイス - Google Patents
電子半透鏡デバイス Download PDFInfo
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- JP2016058566A JP2016058566A JP2014184038A JP2014184038A JP2016058566A JP 2016058566 A JP2016058566 A JP 2016058566A JP 2014184038 A JP2014184038 A JP 2014184038A JP 2014184038 A JP2014184038 A JP 2014184038A JP 2016058566 A JP2016058566 A JP 2016058566A
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ここで、前記ポテンシャル高は、前記二次元電子ガスの最低エネルギーから0.5〜1eVの高さであってよい。
また、前記一次元方向に延びるポテンシャル障壁の厚さは1.2nm以下であってよい。
また、前記ポテンシャル障壁はステップエッジ、カーボンナノチューブ等の一次元ナノ構造体により形成されてよい。
また、前記ポテンシャル障壁は点状のポテンシャル障壁を一次元に配列して形成され、
前記一次元のポテンシャル障壁の高さが一様となるように前記点状のポテンシャル障壁を密に配列してよい。
また、前記点状のポテンシャル障壁はp型Si基板上に形成された
上の表面点欠陥であってよい。
の原子構造(上面図及び側面図)を示す図。(b)Vs=+1.0V、I=0.5nAでの
の高分解能STM定電流像(5×5nm2)。(b)中のひし形は(a)中のひし形に対応する。(c)Vs=1.4Vでの点欠陥周囲のSTM像(10×10nm2)。(d)同時に得られた
像。(c)中の破線はBi三量体上に引いたものである。これらの線は点欠陥位置で交わる。この位置は(d)中の定在波の中心点と一致する。
像(20×20nm2)。
Claims (6)
- 二次元電子ガス中に一次元方向に延びる低いポテンシャル高のポテンシャル障壁を設け、
前記一次元のポテンシャル障壁に、前記ポテンシャル障壁の高さのエネルギーと同じエネルギーで入射した電子が、互いの位相差がπ/2である反射電子と透過電子に分かれる、
電子半透鏡デバイス。 - 前記ポテンシャル高は、前記二次元電子ガスの最低エネルギーから0.5〜1eVの高さである、請求項1に記載の電子半透鏡デバイス。
- 前記一次元方向に延びるポテンシャル障壁の厚さは1.2nm以下である、請求項1または2に記載の電子半透鏡デバイス。
- 前記ポテンシャル障壁はステップエッジ、カーボンナノチューブ等の一次元ナノ構造体により形成される、請求項1から3の何れかに記載の電子半透鏡デバイス。
- 前記ポテンシャル障壁は点状のポテンシャル障壁を一次元に配列して形成され、
前記一次元のポテンシャル障壁の高さが一様となるように前記点状のポテンシャル障壁を密に配列した、
請求項1から3の何れかに記載の電子半透鏡デバイス。 - 前記点状のポテンシャル障壁はp型Si基板上に形成された
上の表面点欠陥である、請求項5に記載の電子半透鏡デバイス。
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114742A (ja) * | 1991-09-30 | 1993-05-07 | Fujitsu Ltd | 電子波干渉型半導体装置 |
JP2003109974A (ja) * | 2001-10-01 | 2003-04-11 | Fujitsu Ltd | カーボンナノチューブゲート電界効果トランジスタとその製造方法、及び微細パターン形成方法 |
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- 2014-09-10 JP JP2014184038A patent/JP6331903B2/ja active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05114742A (ja) * | 1991-09-30 | 1993-05-07 | Fujitsu Ltd | 電子波干渉型半導体装置 |
JP2003109974A (ja) * | 2001-10-01 | 2003-04-11 | Fujitsu Ltd | カーボンナノチューブゲート電界効果トランジスタとその製造方法、及び微細パターン形成方法 |
Non-Patent Citations (2)
Title |
---|
KATSUMI NAGAOKA, SHIN YAGINUMAZ, TOMONOBU NAKAYAMA: "STS Study of 2D Subband State Formed in the Space Charge Layer ofSi(111)-β√3×√3-Bi", E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, vol. Vol. 12, JPN6018004652, 10 May 2014 (2014-05-10), JP, pages 217 - 220 * |
KATSUMI NAGAOKAY, SHIN YAGINUMAZ, TOMONOBU NAKAYAMA: "STS Study of 2D Subband State Formed in the Space Charge Layer ofSi(111)-β√3×√3-Bi", E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, vol. Vol. 12, JPN6018004652, 10 May 2014 (2014-05-10), JP, pages 217 - 220 * |
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