JP2016046491A - Sealing method of optical semiconductor device and optical semiconductor device manufactured by sealing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of sealing an optical semiconductor device, where an optical semiconductor element of wire bonding type is used, with high yield.SOLUTION: A sealing method of an optical semiconductor device, where an optical semiconductor element connected electrically by wire bonding, is mounted on a substrate includes (i) a mounting step for mounting a silicon resin film on the optical semiconductor element, (ii) an adhesion step for compressing a silicon resin film via an elastomer compression member, while softening by heating, and causing the film to adhere to the optical semiconductor element, (iii) and a hardening step for hardening the silicon resin film, by heating to a temperature capable of hardening or more. An elastomer having type A durometer hardness of 20-50, measured by a method described in JIS K 6253-3:2012 is used in the compression member made of elastomer.SELECTED DRAWING: None

Description

  The present invention relates to a method for sealing an optical semiconductor device. In particular, the present invention relates to a method for sealing an optical semiconductor device in which an optical semiconductor element is connected to a substrate by wire bonding.

  Electronic devices and electrical appliances incorporating LED devices are used in various fields of modern society, and the demand is expanding. In particular, white LED devices are used not only for mobile phones and small lighting but also for general lighting and large displays. In manufacturing a white LED device, a blue LED generally uses a phosphor called YAG (yttrium aluminum garnet) that excites 450 nm light, and a red, green, and blue LED called 3in1 emits light simultaneously. There is a method. The method using the blue LED and the phosphor has a smaller number of LEDs and wires than the 3-in-1 method, and can be manufactured at a low cost. Therefore, this method is used for various LED devices.

  In the method using a phosphor, when the LED is sealed with a liquid silicone sealing material containing a phosphor such as YAG and thermally cured, the liquid sealing material is reduced in viscosity due to an increase in temperature so that the sealing is achieved. There has been a problem that the phosphor in the stopper material settles and the color variation of the obtained LED device becomes large. Therefore, conventionally, a film provided with a phosphor layer and a transparent layer is used (see Patent Document 1), or a phosphor ceramic and a transparent film are molded (see Patent Document 2), thereby reducing the dispersibility of the phosphor layer. And succeeded in suppressing the color variation of the LED device.

  However, there are two types of mounting chips, flip chip and wire bonding type. In the case of wire bonding type chips, when bonding the phosphor film, if the film is pressed against the chip, the bonding wire is crushed, and the phosphor It was difficult to bond the films directly. As a countermeasure against this, the sealing sheet has a two-layer structure, and the storage elastic modulus of the layer corresponding to the portion in which the LED or bonding wire is embedded is made lower, so that the LED can be sealed without disconnecting the bonding wire. There was a proposal that it can be stopped (see Patent Document 3).

  However, in this method, if the low elastic modulus layer is filled with a phosphor, the elastic modulus increases and cannot be used. Therefore, the design of the LED device is limited, and the sealing sheet is too soft, so that plastic deformation occurs during handling. As a result, a dent or an interface between the two-layer sheets may be broken. There was also a sealing sheet that changed the components in the two-layer sheet to keep the elastic modulus of the low elastic modulus layer low even when filled with a phosphor, thereby preventing the bonding wire from being crushed or broken. However, it was not possible to suppress a decrease in yield during LED device production.

JP 2011-159874 A JP 2011-102004 A JP 2010-123802 A

  Accordingly, in view of the above circumstances, the present invention has an object to provide a method for sealing an optical semiconductor device using a wire bonding type optical semiconductor element with a high yield, and an optical semiconductor device manufactured by the sealing method. To do.

The present invention has been made to solve the above problems,
[1]
An optical semiconductor device sealing method in which an optical semiconductor element electrically connected by wire bonding is placed on a substrate,
(I) a placing step of placing a silicone resin film on the optical semiconductor element;
(Ii) an adhesion process in which the silicone resin film is heated and softened while being pressurized through an elastomeric pressure member and is in close contact with the optical semiconductor element;
(Iii) a curing step of curing the silicone resin film by heating the silicone resin film to a temperature at which it can be cured, or
Of an optical semiconductor device characterized in that the elastomer pressure member has a hardness of 20 to 50 as a type A durometer hardness measured by the method described in JIS K 6253-3: 2012. Sealing method.
[2]
The sealing step of the optical semiconductor device according to [1], wherein in the adhesion step, the silicone resin film is softened and pressurized under a pressing condition of 0.05 to 1.00 MPa. Method.
[3]
The method for sealing an optical semiconductor device according to [1] or [2], wherein the adhesion step (ii) is performed using a vacuum laminator having an elastomeric diaphragm.
[4]
The silicone resin film has the following components (A) to (D):
(A) The following formula (1) having an alkenyl group bonded to at least two silicon atoms in one molecule;
(In the formula, R ¹ is a group selected from a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, and an alkenyl group having 2 to 10 carbon atoms, However, it has at least two or more alkenyl groups in one molecule, and 0 ≦ a <0.5, 0 <b <0.7, 0 <c ≦ 0.85, 0 <d <0.3, However, a + b + c + d = 1.0)
A network-organopolysiloxane represented by
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to at least two or more silicon atoms in one molecule;
(C) an addition reaction catalyst, and (D) a film-like molded article of an addition-curable organopolysiloxane composition containing at least one selected from phosphors and inorganic pigments, In the organopolysiloxane, 30 to 99 mol% of the siloxane unit (D unit) represented by R ¹ ₂ SiO _2/2 is 5 to 50 continuous siloxane units [1] to [3 ] The sealing method of the optical semiconductor device in any one of.
[5]
The method for sealing an optical semiconductor device according to [4], wherein the addition-curable organopolysiloxane composition is solid or semi-solid at 23 ° C.
[6]
The light according to any one of [1] to [5], wherein the silicone resin film is obtained by bonding a silicone resin protective film having a thickness of 1 to 1,000 μm to at least one side of the film. A method for sealing a semiconductor device.
[7]
The silicone resin protective film comprises the following components (A) to (C):
(A) The following formula (1) having an alkenyl group bonded to at least two silicon atoms in one molecule;
(In the formula, R ¹ is a group selected from a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, and an alkenyl group having 2 to 10 carbon atoms, However, it has at least two or more alkenyl groups in one molecule, and 0 ≦ a <0.5, 0 <b <0.7, 0 <c ≦ 0.85, 0 <d <0.3, However, a + b + c + d = 1.0)
A network-organopolysiloxane represented by
(B) an organohydrogenpolysiloxane having a hydrogen atom bonded to at least two or more silicon atoms in one molecule, and (C) an addition-curable organopolysiloxane composition containing an addition reaction catalyst and containing no phosphor. In the organopolysiloxane of component (A) of the composition, 5 to 50 of 30 to 99 mol% of the siloxane unit (D unit) represented by R ¹ ₂ SiO _2/2 [6] The method for sealing an optical semiconductor device according to [6], wherein the siloxane unit is a continuous siloxane unit.
[8]
The sealing of an optical semiconductor device according to [6] or [7], wherein the silicone resin film is obtained by bonding the silicone resin protective film to a side opposite to a surface in contact with the optical semiconductor element. Stop method.
[9]
The thickness of the silicone resin film is adjusted and used so as to be thicker in a range of 10 to 500 μm with respect to the height from the substrate surface of the optical semiconductor device to the highest point of the bonding wire. The method for sealing an optical semiconductor device according to any one of [1] to [8].
[10]
An optical semiconductor device manufactured by the method for sealing an optical semiconductor device according to any one of [1] to [9].

  According to the method for sealing an optical semiconductor device of the present invention, it is possible to easily seal with a silicone resin without causing abnormality such as deformation or disconnection of a bonding wire at the time of sealing. The yield is improved, and an optical semiconductor device with a stable quality can be manufactured in large quantities. In addition, the silicone resin film used for sealing is solid or semi-solid at 23 ° C. (room temperature), and is in an uncured A stage state, so that it has good handling properties and storage stability and is easy to handle. is there. Furthermore, the optical semiconductor device manufactured by the sealing method of the present invention has very good dispersibility of the phosphor and / or inorganic pigment blended in the sealing material, and has troubles related to color tone such as color shift and color unevenness. In addition, a high-quality and stable optical semiconductor device can be provided.

It is a top view of a COB substrate (chip mounting substrate). It is sectional drawing of the aspect 1 of a COB board | substrate. It is sectional drawing of the aspect 2 of a COB board | substrate. It is sectional drawing of the aspect 1 of a package. It is sectional drawing of the aspect 2 of a package. It is explanatory drawing which shows the calculation method for adjusting the thickness of a silicone resin film.

Hereinafter, the present invention will be described in detail, but the present invention is not limited thereto.
The present invention is a method of sealing an optical semiconductor device in which an optical semiconductor element electrically connected by wire bonding is placed on a substrate, and includes the following three steps: .

(1) Resin film placement step (i)
This step is a step of placing a silicone resin film as a sealing material on the substrate on which the optical semiconductor element and the bonding wire are placed.
[Components of resin film]
The silicone resin film comprises the following components (A) to (D):
(A) The following formula (1) having an alkenyl group bonded to at least two silicon atoms in one molecule;
(In the formula, R ¹ is a group selected from a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, and an alkenyl group having 2 to 10 carbon atoms, However, it has at least two or more alkenyl groups in one molecule, and 0 ≦ a <0.5, 0 <b <0.7, 0 <c ≦ 0.85, 0 <d <0.3, However, a + b + c + d = 1.0)
An alkenyl group containing 30 to 99 mol% of the siloxane units (D units) represented by R ¹ ₂ SiO _2/2 is 5 to 50 continuous siloxane units Network chain organopolysiloxane,
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to at least two or more silicon atoms in one molecule;
A film-like molded article of an addition-curable organopolysiloxane composition containing at least one selected from (C) an addition reaction catalyst and (D) a phosphor and an inorganic pigment is preferable. Hereinafter, the components (A) to (D) will be described in detail.

[(A) Alkenyl group-containing network chain organopolysiloxane]
Component (A) is an organopolysiloxane having an alkenyl group bonded to at least two silicon atoms in one molecule. The organopolysiloxane represented by the above formula (1) is the main component of the silicone resin film of the present invention.

In the above formula (1), ^{R 1} is, independently, a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, from 2 to 10 carbon atoms It is a group selected from alkenyl groups. However, the component (A) has at least two alkenyl groups in one molecule. Specific examples of monovalent aromatic hydrocarbon groups having 6 to 12 carbon atoms include aryl groups such as phenyl group, tolyl group, xylyl group and naphthyl group; aralkyl groups such as benzyl group, phenylethyl group and phenylpropyl group. Can be mentioned. Of these, a phenyl group, a benzyl group and the like are preferable, and a phenyl group is particularly preferable. Specific examples of the monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pentyl group, neopentyl group, and hexyl group. , A cyclic aliphatic hydrocarbon group such as an octyl group, a nonyl group, and a decyl group, a cyclic aliphatic hydrocarbon group such as a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group, among which a methyl group, an ethyl group, and a cyclopentyl group , A cyclohexyl group and the like are preferable, and a methyl group and a cyclohexyl group are particularly preferable. In addition, those in which some or all of the hydrogen atoms of these hydrocarbon groups are substituted with halogen atoms such as fluorine, bromine, chlorine, or cyano groups may be used. For example, chloromethyl group, chloropropyl group, bromoethyl Group, a halogen-substituted alkyl group such as a trifluoropropyl group, and a cyanoethyl group. Specific examples of the alkenyl group having 2 to 10 carbon atoms include vinyl group, allyl group, 3-butenyl group, and 4-pentenyl group. Among these, a vinyl group, an allyl group, and the like are preferable, and a vinyl group is particularly preferable.

In the above formula (1), at least one of R ¹ is preferably a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, particularly with respect to the number of moles of all R ¹ groups in formula (1). The proportion of the monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms is preferably 20 to 50 mol, and more preferably 30 to 50 mol is the monovalent aromatic hydrocarbon group. When the monovalent aromatic hydrocarbon group is within this range, the resulting silicone resin composition is preferably in a solid or semi-solid state even at 23 ° C.

  In the above formula (1), a is usually a number 0 ≦ a <0.5, preferably 0 ≦ a <0.30, more preferably 0 ≦ a <0.15, and b is 0 <b. <0.7, preferably 0.10 <b <0.70, more preferably 0.15 <b <0.65, and c is 0 <c ≦ 0.85, preferably 0.10 <. c ≦ 0.85, more preferably 0.20 <c ≦ 0.85, further 0.30 <c ≦ 0.85, d is 0 <d <0.3, preferably 0 .001 <d <0.2, more preferably 0.001 <d <0.15. However, a + b + c + d = 1.0.

In addition, in the organopolysiloxane of component (A), 30 mol% or more and 99 mol% or less, preferably 50 mol% or more and 99 mol% or less of the siloxane unit (D unit) represented by R ¹ ₂ SiO _2/2 is continuous. If the number of continuous siloxane units is 5 to 50, preferably 5 to 40, and more preferably 8 to 40, the film is melted at an appropriate temperature when the films are bonded to each other.

Furthermore, the alkenyl group-containing network-chain organopolysiloxane represented by the above formula (1) may contain a hydroxyl group and / or an alkoxy group in the molecule. Specifically, a hydroxyl group and / or an alkoxy group having 1 to 6 carbon atoms may be included within a range of 5 mol% or less in all R ¹ groups of the organopolysiloxane. Specific examples of the alkoxy group having 1 to 6 carbon atoms include methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n-butoxy group, isobutoxy group, t-butoxy group, pentyloxy group, and neopentyloxy group. Hexyloxy group and the like, and in particular, methoxy group, ethoxy group, and isopropoxy group.

The organopolysiloxane preferably has a weight average molecular weight of 2,000 to 100,000, and more preferably 5,000 to 80,000. In addition, the weight average molecular weight referred in this invention refers to the weight average molecular weight which used polystyrene as a standard substance by the gel permeation chromatography (GPC) measured on the following conditions.
[Measurement condition]
Developing solvent: Tetrahydrofuran (THF)
Flow rate: 0.6mL / min
Detector: Differential refractive index detector (RI)
Column: TSK Guardcolom SuperH-L
TSKgel SuperH4000 (6.0 mm ID × 15 cm × 1)
TSKgel Super H3000 (6.0 mm ID × 15 cm × 1)
TSKgel SuperH2000 (6.0 mm ID × 15 cm × 2)
(Both manufactured by Tosoh Corporation)
Column temperature: 40 ° C
Sample injection volume: 20 μL (0.5% by weight THF solution)

  In addition to the siloxane units in the above formula (1), the network-chain organopolysiloxane further contains other bifunctional siloxane units and trifunctional siloxane units (that is, organosilsesquioxane units). May be.

The organopolysiloxane having the resin structure of the above formula (1) is composed of the above SiO _4/2 unit (Q unit), R ¹ SiO _3/2 unit (T unit), R ¹ ₂ SiO _2/2 unit (D unit) and It can be easily synthesized by combining the compounds serving as the unit sources of R ¹ ₃ SiO _1/2 units (M units) so as to have the above molar ratio, for example, by performing a cohydrolysis reaction in the presence of an acid. it can.

  As the Q unit source, for example, tetramethoxysilane, tetraethoxysilane, or the like can be used.

  As the T unit source, for example, phenyltrichlorosilane, phenyltrimethoxysilane, phenyltriethoxysilane, cyclohexyltrimethoxysilane and the like can be used.

  Examples of the D unit source include dimethyldichlorosilane, methylvinyldichlorosilane, methylcyclohexyldimethoxysilane, methylvinyldimethoxysilane, dicyclohexyldimethoxysilane, octamethylcyclotetrasiloxane, 1,3,5,7-tetramethyl1,3, 5,7-tetravinylcyclotetrasiloxane and 1,3,5,7-tetramethyl 1,3,5,7-tetraallylcyclotetrasiloxane can be used.

Furthermore, the following siloxane compound can be illustrated as a raw material of D unit.

(Here, p ′, q ′ and r ′ are numbers (average value) of 0 to 50, and are numbers (average value) satisfying (p ′ or q ′) + r ′ = 5 to 50.

As the M unit source, for example, the following compounds can be used.

[(B) Organohydrogenpolysiloxane]
The component (B) is an organohydrogenpolysiloxane having hydrogen atoms bonded to at least two silicon atoms in one molecule. Organohydrogenpolysiloxane acts as a cross-linking agent, and a cured product is obtained by an addition reaction between a hydrogen atom bonded to a silicon atom in the component (hereinafter referred to as SiH group) and an alkenyl group in component (A). Form. Such organohydrogenpolysiloxane may be any organohydrogenpolysiloxane having hydrogen bonded to at least two silicon atoms in one molecule, preferably at least two SiH groups in one molecule. Those having 3 or more are preferably used.

Preferably, the component (B) is represented by the following formula (2).
In the above formula (2), R ² may be an optionally substituted monovalent hydrocarbon group having 1 to 10 carbon atoms, preferably 1 to 7 carbon atoms. Examples of such R ² include methyl group, ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, t-butyl group, pentyl group, neopentyl group, hexyl group, octyl group, nonyl group, decyl group and the like. Alkyl group; halogen-substituted alkyl groups such as chloromethyl group, chloropropyl group, bromoethyl group and trifluoropropyl group; and cyano-substituted alkyl groups such as cyanoethyl group. Of these, a methyl group is preferred.

In the above formula (2), R ³ is an aryl group, preferably having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a tolyl group, a xylyl group, and a naphthyl group. Of these, a phenyl group is preferred. Further, e is a number from 0.6 to 1.5, f is a number from 0 to 0.85, and g is a number from 0.4 to 1.0, provided that e + f + g = 1.0 to 2.5. The position of the hydrosilyl group in the molecule is not particularly limited, and may be at the end of the molecular chain or in the middle.

Such organohydrogenpolysiloxanes include tris (dimethylhydrogensiloxy) methylsilane, tris (dimethylhydrogensiloxy) phenylsilane, 1,1,3,3-tetramethyldisiloxane, 1,3,5,7. -Tetramethylcyclotetrasiloxane, both ends trimethylsiloxy group-blocked methylhydrogen polysiloxane, both ends trimethylsiloxy group-blocked dimethylsiloxane / methylhydrogensiloxane copolymer, both ends dimethylhydrogensiloxy group-blocked dimethylsiloxane / methylhydrogen Siloxane copolymer, trimethylsiloxy group-capped methylhydrogensiloxane / diphenylsiloxane copolymer, both end-trimethylsiloxy group-capped methylhydrogensiloxane Down-diphenylsiloxane-dimethylsiloxane _{copolymer, (CH} 3) 2 _{HSiO 1/2} copolymer comprising units and _{SiO 4/2 units, (CH} 3) 2 _{HSiO 1/2} units and _{SiO 4/2} units And a copolymer comprising (C ₆ H ₅ ) SiO _3/2 units.

  The amount of component (B) used is the number of hydrogen atoms bonded to silicon atoms in the organohydrogenpolysiloxane of component (B) per mole of alkenyl groups in the alkenyl group-containing network organopolysiloxane of component (A). The amount (ie, SiH group) is usually 0.5 to 8 mol, preferably 0.7 to 5 mol.

[(C) Addition reaction catalyst]
(C) component is mix | blended in order to accelerate | stimulate the addition reaction of (A) component and (B) component. As the addition reaction catalyst, platinum-based, palladium-based, and rhodium-based catalysts can be used. From the viewpoint of cost and the like, a platinum group metal-based catalyst is preferable. Examples of the platinum group metal catalyst include H ₂ PtCl ₆ · mH ₂ O, K ₂ PtCl ₆ , KHPtCl ₆ · mH ₂ O, K ₂ PtCl ₄ , K ₂ PtCl ₄ · mH ₂ O, PtO ₂ · mH ₂ O (m is a positive integer). In addition, a complex of the platinum group metal catalyst with a hydrocarbon such as an olefin, an alcohol, or a vinyl group-containing organopolysiloxane can be used. The catalyst may be used alone or in combination of two or more.

  What is necessary is just to mix | blend a catalyst with what is called a catalyst amount. When a platinum group metal catalyst is used, it is preferably 0.0001 to 0.2 parts by mass in terms of platinum group metal (mass) with respect to 100 parts by mass of the total amount of the components (A) and (B). Preferably, it is used in an amount of 0.0001 to 0.05 parts by mass.

[(D) Phosphor / Inorganic pigment]
Examples of the phosphor powder according to the present invention include one that absorbs light from a semiconductor light emitting diode having a nitride-based semiconductor as a light emitting layer and converts the light into light having a different wavelength. For example, nitride phosphors / oxynitride phosphors mainly activated by lanthanoid elements such as Eu and Ce, lanthanoid phosphors such as Eu, and alkalis mainly activated by transition metal elements such as Mn Earth metal halogen apatite phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth metal silicate phosphor, alkaline earth metal sulfide phosphor, alkaline earth Metal thiogallate phosphors, alkaline earth metal silicon nitride phosphors, germanate phosphors, lanthanoids such as rare earth aluminate phosphors, rare earth silicate phosphors or Eu mainly activated with lanthanoid elements such as Ce At least one selected from organic and organic complex phosphors, Ca-Al-Si-ON-based oxynitride glass phosphors, etc., mainly activated by an elemental element It is preferable that the species or more. As specific examples, the following phosphors can be used, but are not limited thereto.

A nitride-based phosphor mainly activated by a lanthanoid element such as Eu or Ce is M ₂ Si ₅ N ₈ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn) .)and so on. In addition to M ₂ Si ₅ N ₈ : Eu, MSi ₇ N ₁₀ : Eu, M _1.8 Si ₅ O _0.2 N ₈ : Eu, M _0.9 Si ₇ O _0.1 N ₁₀ : Eu (M Is at least one selected from Sr, Ca, Ba, Mg, and Zn.

An oxynitride phosphor mainly activated by a lanthanoid element such as Eu or Ce is MSi ₂ O ₂ N ₂ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, and Zn). There is.)

For alkaline earth metal halogen apatite phosphors mainly activated by lanthanoid elements such as Eu and transition metal elements such as Mn, M ₅ (PO ₄ ) ₃ X: R (M is Sr, Ca, Ba). X is at least one selected from F, Cl, Br, and I. R is at least one selected from Eu, Mn, Eu and Mn. There is.)

In the alkaline earth metal borate phosphor, M ₂ B ₅ O ₉ X: R (M is at least one selected from Sr, Ca, Ba, Mg, Zn. X is F, Cl, And at least one selected from Br and I. R is Eu, Mn, or any one of Eu and Mn.).

Alkaline earth metal aluminate phosphors include SrAl ₂ O ₄ : R, Sr ₄ Al ₁₄ O ₂₅ : R, CaAl ₂ O ₄ : R, BaMg ₂ Al ₁₆ O ₂₇ : R, BaMg ₂ Al ₁₆ O ₁₂ : R, BaMgAl ₁₀ O ₁₇ : R (R is one or more of Eu, Mn, Eu and Mn).

Examples of the alkaline earth metal sulfide phosphor include La ₂ O ₂ S: Eu, Y ₂ O ₂ S: Eu, and Gd ₂ O ₂ S: Eu. Examples of rare earth aluminate phosphors mainly activated with lanthanoid elements such as Ce include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y _{3 (Al 0.8 Ga 0.2) 5 O} 12: Ce, and the like (Y, Gd) 3 (Al , Ga) YAG -based phosphor represented by the composition formula of _{5 O 12.} Further, there are Tb ₃ Al ₅ O ₁₂ : Ce, Lu ₃ Al ₅ O ₁₂ : Ce, etc. in which a part or all of Y is substituted with Tb, Lu or the like.

Other phosphors include ZnS: Eu, Zn ₂ GeO ₄ : Mn, MGa ₂ S ₄ : Eu (M is at least one selected from Sr, Ca, Ba, Mg, Zn). .
The phosphor described above contains at least one selected from Tb, Cu, Ag, Au, Cr, Nd, Dy, Co, Ni, and Ti instead of Eu or in addition to Eu as desired. You can also.

The Ca—Al—Si—O—N-based oxynitride glass phosphor is expressed in terms of mol%, CaCO ₃ is converted to CaO, 20 to 50 mol%, Al ₂ O ₃ is 0 to 30 mol%, SiO 25 to 60 mol%, AlN 5 to 50 mol%, rare earth oxide or transition metal oxide 0.1 to 20 mol%, and oxynitride glass having a total of 5 components of 100 mol% as a base material This is a phosphor. In addition, in the phosphor using oxynitride glass as a base material, the nitrogen content is preferably 15 wt% or less, and other rare earth element ions serving as a sensitizer in addition to rare earth oxide ions are used as rare earth oxides. It is preferable to contain as a co-activator in content in the range of 0.1-10 mol% in fluorescent glass.

Silicate phosphors include (BaSrMg) ₃ Si ₂ O ₇ : Pb, (BaMgSrZnCa) ₃ Si ₂ O ₇ : Pb, Zn ₂ SiO ₄ : Mn, (BaMg) Si ₂ O ₅ : Eu, Y ₂ SiO ₅ : Ce, Tb, (BaSrCa) ₂ SiO ₄ : Eu, BaSi ₂ O ₅ : Pb, and the like.

  Moreover, it is fluorescent substance other than the said fluorescent substance powder, Comprising: The fluorescent substance which has the same performance and effect can also be used.

The shape of the phosphor powder is not particularly limited, and specific examples include a spherical shape and a non-spherical shape. The average particle size is preferably 0.01 to 200 μm, more preferably 0.01 to 100 μm. As a fluorescent substance amount, it is 20-600 mass parts with respect to a total of 100 mass parts of (A)-(C) component, Preferably it is 50-600 mass parts, More preferably, it is 50-500 mass parts. When the amount of the phosphor is less than 20 parts by mass, the target color temperature after wavelength conversion does not appear and does not play a role as a phosphor film. On the other hand, when the amount of the phosphor is more than 600 parts by mass, the film itself becomes fragile when the wavelength conversion film is formed, so that it does not function as a wavelength conversion film. The average particle size can be determined as a mass average value D ₅₀ in the particle size distribution measurement by laser diffraction method _(or median diameter).

Inorganic pigments include alumina; rare earth oxides typified by yttrium oxide; white pigments such as titanium oxide, zinc oxide, zinc sulfate, lead white, magnesium oxide, barium sulfate, lithopone and barite powder; red lead, iron oxide red Red pigments such as yellow lead, yellow pigments such as zinc yellow, blue pigments such as ultramarine blue and potassium ferrocyanide, black pigments such as carbon black, etc. Therefore, a white pigment is preferable, and titanium oxide is more preferably used. The unit cell of titanium oxide may be any of the rutile type, anatase type, and brookite type unit cell, but the rutile type is more preferable from the viewpoint of thermal stability. Moreover, although an average particle diameter and a shape are not limited, generally an average particle diameter is 0.05-5.0 micrometers. The titanium oxide can be surface-treated in advance with a hydrous oxide such as Al or Si in order to enhance the compatibility and dispersibility with a resin or an inorganic filler. The average particle size can be determined as a mass average value D ₅₀ in the particle size distribution measurement by laser diffraction method _(or median diameter).

  In the case of a white pigment, the blending amount is 3 to 200 parts by weight, preferably 5 to 150 parts by weight with respect to 100 parts by weight as a total of the components (A) to (C). If it is 3 parts by mass or more, sufficient whiteness can be obtained, so that the reflectance is increased and the light extraction efficiency is also increased. Moreover, if it is 200 mass parts or less, since the ratio of the other component added for the purpose of a mechanical strength improvement can not only mix | blend a necessary and sufficient amount, but a moldability is not impaired, it is preferable.

  At least one of the phosphor and the inorganic pigment is blended in the addition-curable organopolysiloxane composition. Further, the phosphor and the inorganic pigment may be used alone or in combination of two or more.

  When both the phosphor and the inorganic pigment are blended, the respective ratios may be arbitrary depending on the purpose of use, but the total blending amount of the phosphor and the inorganic pigment is the sum of the components (A) to (C). If it is in the range of 10 to 600 parts by mass with respect to 100 parts by mass, the moldability is not impaired, which is preferable.

[(E) Other ingredients]
In addition to the components (A) to (D), the addition curable organopolysiloxane composition of the present application reacts in a range of 0 to 10 parts by mass with respect to 100 parts by mass of the total of components (A) to (D). An inhibitor, an adhesion assistant, and the like may be included.

[Additionally curable organopolysiloxane composition]
The addition-curable organopolysiloxane composition of the present invention is desirably solid or semisolid at 23 ° C. By being in a solid or semi-solid state, the dispersibility of the phosphor and the inorganic pigment is also improved. Furthermore, since phosphors and inorganic pigments do not settle with time, there is almost no color variation due to different degrees of sedimentation in package production, and therefore they are used very favorably.

  Here, the “semi-solid state” means a state of a substance that has plasticity and can retain the shape when molded into a specific shape for at least 1 hour, preferably 8 hours or more. Thus, for example, a flowable material having a very high viscosity at room temperature is essentially flowable, but changes to the applied shape in a short time of at least 1 hour (ie, breakage) due to the very high viscosity. ) Cannot be seen with the naked eye, the substance is in a semi-solid state.

[Manufacture of silicone resin film]
The silicone resin film used in the present invention is produced by processing the above addition-curable organopolysiloxane composition into a film. Examples of means for producing the silicone resin film include a film coater and a hot press machine. In order to produce a silicone resin film using these means, for example, a metal is sandwiched between the above-mentioned addition-curable organopolysiloxane composition, and a support film for pressure is placed on one side and a release film is placed on the other side. The temperature is usually 60 to 150 ° C., preferably 80 to 120 ° C. using a hot press machine, and the pressure is 0.1 to 20 MPa, preferably 0.3 to 15 MPa, and 1 to 60 minutes, preferably 1 Perform compression molding for ~ 20 minutes.

  Examples of the support film for pressurization include a PET film, a fluorine resin film, a polyethylene (PE) film, and a polypropylene (PP) film. Examples of the release film include a PET film, a PE film, a PP film, a fluorine resin film, and the like, which are each coated with a fluorine resin or a silicone resin. As the pressurizing support film and the release film, films of the same kind or different ones may be used.

  When a film coater is used, it may be formed into a sheet or the like in a solvent-free state, but the composition may be dissolved in an organic solvent to form a varnish. The composition in the varnish state is heated with a film coater at a temperature of 60 to 150 ° C. for 1 to 20 minutes to be processed into a sheet.

  Examples of the organic solvent include, but are not limited to, hydrocarbon solvents such as benzene, toluene, and xylene; ether solvents such as tetrahydrofuran, 1,4-dioxane, and diethyl ether; ketone solvents such as methyl ethyl ketone; chloroform, Halogen solvents such as methylene chloride and 1,2-dichloroethane; alcohol solvents such as methanol, ethanol, isopropyl alcohol and isobutyl alcohol; octamethylcyclotetrasiloxane, hexamethyldisiloxane and the like, and cellosolve acetate, cyclohexanone, Solvents such as butyrocellosolve, methyl carbitol, carbitol, butyl carbitol, diethyl carbitol, cyclohexanol, diglyme and triglyme. These organic solvents may be used alone or in combination of two or more.

[Silicone resin film]
The thickness of the silicone resin film produced by the above production method is preferably 10 to 500 μm, more preferably 20 to 500 μm, relative to the height from the substrate surface of the optical semiconductor device to the highest point of the bonding wire. Thick by 300 μm.

  If the thickness of the film is equal to or greater than the lower limit value, the pressure from the pressure member is not applied to the wire even when the film is softened in the next step of closely attaching the film to the optical semiconductor element. Deformation can be prevented. Moreover, if the thickness of the film is equal to or less than the upper limit value, the film having the phosphor and / or the inorganic pigment is heated uniformly in the thickness direction, so that the phosphor dispersibility is not imbalanced.

[Silicone resin film with silicone resin protective film]
The silicone resin film of the present invention may be used as a silicone resin film by laminating a silicone resin protective film having a thickness of 1 to 1000 μm, preferably 10 to 100 μm, on at least one side of the film.

  The silicone resin protective film may be bonded to one side or both sides of a silicone resin film containing a phosphor and / or an inorganic pigment, and may be laminated with each other, but the silicone resin film containing a phosphor and / or an inorganic pigment On the other hand, the silicone resin protective film is preferably bonded to the side opposite to the surface in contact with the optical semiconductor element.

  The silicone resin protective film can be produced by the same production method as the silicone resin sheet using the components (A) to (C) in the addition curable organopolysiloxane composition as they are, and in particular, the addition curing described above. Comprising a composition having the same components as those used in the silicone resin film, including the components (A) to (C) and the component (D) (phosphor and / or inorganic pigment) in the functional organopolysiloxane composition. Is most desirable. When these are not compositions of the same component, the difference in softening point between the respective resin compositions is preferably within 10 ° C, more preferably within 5 ° C. However, even if the softening point is greatly deviated, there may be no problem depending on the structure of the LED device.

  Here, the “softening point” is a temperature at which the resin is softened, and there are various methods. In the present invention, an apparatus such as SS6100 manufactured by SII is used, and a penetrating method (needle) is used in thermomechanical analysis (TMA). Means a softening point measured by a method of measuring the process of embedding in a resin and measuring the softening temperature from the deformation of the sample. The softening point of these silicone resin compositions is usually in the range of 30 to 150 ° C, preferably 30 to 120 ° C, more preferably 35 to 100 ° C.

  In addition to the components (A) to (C), an inorganic pigment may be added to the silicone resin composition used for the silicone resin protective film. As an inorganic pigment, the inorganic pigment illustrated by (D) component of the addition curable organopolysiloxane composition used with the said silicone resin film can be used, and a white pigment is especially preferable.

  The blending amount of the inorganic pigment added to the silicone resin protective film is preferably such that the light reflectance is higher than that of the transparent resin. Specifically, the amount of the inorganic pigment is 10 with respect to a total of 100 parts by mass of the components (A) to (C). It is -600 mass parts, Preferably it is 20-550 mass parts. When a silicone resin protective film added with a white pigment is bonded to a silicone resin film containing a phosphor, light is scattered to give a soft appearance and improve the visibility of the LED device.

  In the above silicone resin film, when a silicone resin film containing a phosphor and / or an inorganic pigment and a silicone protective film are used in combination, each of these two types of silicone resin films is subjected to thermal laminator or You may manufacture by bonding by a hot press.

[Mounting of silicone resin film]
Chips and bonding chips formed on a substrate by cutting a silicone resin film produced by processing an addition-curable organopolysiloxane composition using components (A) to (D) into a predetermined length and width. Place on the wire. When the silicone resin protective sheet is provided on one side of the silicone resin film, it is preferable to place the silicone resin film with the opposite side of the protective sheet surface as the chip side.

(2) Resin film adhesion process (ii)
In this step, the silicone resin film placed on the optical semiconductor element is heated and softened while being pressurized through an elastomeric pressure member to be in close contact with the optical semiconductor element.

[Conditioning process conditions]
Here, the heating temperature of the silicone resin film is desirably not less than the softening point and not more than the curing temperature of the silicone resin composition constituting the film, and is preferably 1 to 80 ° C. higher than the softening point. More preferably, the temperature is higher by 5 to 50 ° C.

  When the film is softened and pressed, the pressure is set at 0.05 to 1.00 MPa, preferably 0.05 to 0.50 MPa, and more preferably 0.10 to 0.40 MPa. Is preferred. When pressure is applied at a pressure of 0.05 MPa or more, generation of voids can be suppressed, and when pressure is applied at a pressure of 1.0 MPa or less, the occurrence of wire crushing can be prevented.

[Elastomer pressure member]
When pressurizing the softened silicone resin film, the main feature of the present invention is to pressurize it through an elastomeric pressure member having a specific hardness. Thereby, even in an optical semiconductor device in which optical semiconductor elements are connected by wire bonding, the wire can be sealed with a silicone resin without collapsing.

  The shape of the pressure member made of elastomer can be suitably selected depending on the type and shape of the pressure device such as a sheet shape, a block shape, and a diaphragm shape, and among them, a sheet shape or a diaphragm shape is preferable. The size of the pressure member may be the same as or larger than that of the substrate incorporating the optical semiconductor device to be sealed.

  As the material for the elastomeric pressure member, a material having heat resistance equal to or higher than the heating temperature when the silicone resin film is adhered is desirable. Any material having heat resistance equal to or higher than the temperature can be repeatedly manufactured because physical properties such as the hardness of the pressure member do not change. Specific examples include silicone elastomers and urethane resins.

  Moreover, the hardness of the said pressure member made from an elastomer is 20-50 as a type A durometer hardness measured by the method of JISK6253-3-3: 2012, and it is preferable that it is 20-40. Within this range, even if the softened silicone resin film is in close contact with the optical semiconductor element, the bonding wire placed on the substrate can be in close contact without being deformed or disconnected. it can.

[Pressure device]
As an apparatus for pressurizing the softened silicone resin film, an apparatus used for ordinary pressure molding or vacuum molding can be used, but it is particularly preferable to use a vacuum laminator provided with a rubber diaphragm. Here, the rubber diaphragm is a balloon-like rubber installed on the top of the laminator. By sending compressed air or air into the rubber, it is possible to press the substrate and the film cleanly in a vacuum. It is a member. This rubber diaphragm may be used as the elastomer pressure member, or another elastomer pressure member may be inserted between the silicone resin film and the rubber diaphragm.

  In addition, in order to prevent the softened silicone resin film from adhering to the elastomeric pressure member or the elastomeric pressure member from being easily peeled after the film is adhered to the optical semiconductor element, A release film may be sandwiched between the silicone resin film and the elastomer pressure member. Examples of the release film include a fluororesin-coated PET film, a silicone resin-coated PET film, and a fluororesin film.

(3) Silicone resin film curing step (iii)
This step is a step of curing the silicone resin film by heating the silicone resin film in close contact with the optical semiconductor element to a temperature at which it can be cured. The heating temperature is usually 60 to 250 ° C, preferably 80 to 200 ° C, more preferably 100 to 180 ° C. If it is 60 degreeC or more, this film can be hardened in a comparatively short time, and if it is 250 degrees C or less, it can prevent that the silicone resin which comprises a film decomposes | disassembles.

(4) Other Steps The method for sealing an optical semiconductor device shown in the present invention is characterized by having the above three steps, but in addition to this, a manufacturing step can be added as necessary. For example, it may include a step of processing a molded article such as a step of dividing a substrate on which a plurality of manufactured optical semiconductor devices are mounted. Further, there may be no reflecting material or dam material on the outer periphery of the package.

  EXAMPLES Hereinafter, although a synthesis example, a preparation example, an Example, and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.

[Synthesis Example 1]
Phenyltrichlorosilane: 1142.1 g (87.1 mol%), ClMe ₂ SiO (Me ₂ SiO) ₃₃ SiMe ₂ Cl: 529 g (3.2 mol%) and dimethylvinylchlorosilane: 72.4 g (9.7 mol%) in toluene After being dissolved in the solution, it was dropped into water and co-hydrolyzed. Further, after neutralization and dehydration by washing with water and alkali washing, the solvent was stripped to obtain a phenyl group-containing vinyl silicone resin A1. The polystyrene equivalent weight average molecular weight measured by GPC using THF as a solvent was 63,000, and the vinyl equivalent was 0.034 mol / 100 g.

[Synthesis Example 2]
Phenyltrichlorosilane: 1142.1 g (87.1 mol%), ClMe ₂ SiO (Me ₂ SiO) ₃₃ SiMe ₂ Cl: 529 g (3.2 mol%) and methyldichlorosilane: 69 g (9.7 mol%) dissolved in toluene Thereafter, it was dropped into water, co-hydrolyzed, neutralized by water washing and alkali washing, dehydrated, and then the solvent was stripped to obtain a phenyl group-containing hydrogen silicone resin B1. The weight average molecular weight in terms of polystyrene as measured by GPC using THF as a solvent was 58,000, and the SiH group equivalent was 0.034 mol / 100 g.

[Synthesis Example 3]
Phenyltrichlorosilane: 1142.1 g (84.4 mol%), ClMe ₂ SiO (Me ₂ SiO) ₁₃ SiMe ₂ Cl: 466.6 g (6.3 mol%) and dimethylvinylchlorosilane: 72.4 g (9.4 mol%) Was dissolved in toluene, dropped into water, co-hydrolyzed, neutralized by water washing and alkali washing, dehydrated, and then the solvent was stripped to obtain a phenyl group-containing vinyl silicone resin A2. The polystyrene equivalent weight average molecular weight measured by GPC using THF as a solvent was 22,000, and the vinyl equivalent was 0.067 mol / 100 g.

[Synthesis Example 4]
Phenyltrichlorosilane: 1142.1 g (84.4 mol%), ClMe ₂ SiO (Me ₂ SiO) ₁₃ SiMe ₂ Cl: 466.6 g (6.3 mol%) and methyldichlorosilane: 69.0 g (9.4 mol%) Was dissolved in toluene, dropped into water, co-hydrolyzed, neutralized by water washing and alkali washing, dehydrated, and then the solvent was stripped to obtain a phenyl group-containing hydrogen silicone resin B2. The weight average molecular weight in terms of polystyrene as measured by GPC using THF as a solvent was 11,000, and the SiH group equivalent was 0.067 mol / 100 g.

[Synthesis Example 5]
Phenyltrichlorosilane: 1142.1 g (87.4 mol%), HO— (PhMeSiO) ₃₅ —H: 869.7 g (2.9 mol%) and dimethylvinylchlorosilane: 72.3 g (9.7 mol%) dissolved in toluene Thereafter, the solution was dropped into water, co-hydrolyzed, neutralized by water washing and alkali washing, dehydrated, and then the solvent was stripped to obtain a phenyl group-containing vinyl silicone resin A3. The weight average molecular weight in terms of polystyrene as measured by GPC using THF as a solvent was 23,000, and the vinyl equivalent was 0.015 mol / 100 g.

[Synthesis Example 6]
Phenyltrichlorosilane: 1142.1 g (87.1 mol%), HO— (PhMeSiO) ₃₅ —H: 869.7 g (2.9 mol%) and methyldichlorosilane: 69 g (9.7 mol%) were dissolved in toluene. The solution was dropped into water, co-hydrolyzed, neutralized by water washing and alkali washing, dehydrated, and then the solvent was stripped to obtain a phenyl group-containing hydrogen silicone resin B3. The weight average molecular weight in terms of polystyrene as measured by GPC using THF as a solvent was 8,000, and the SiH group equivalent was 0.015 mol / 100 g.

[Comparative Synthesis Example 7]
To the flask, xylene: 1000 g and water: 5014 g were added, and a mixture of phenyltrichlorosilane: 2285 g (10.8 mol), vinyldimethylchlorosilane: 326 g (2.70 mol) and xylene, 1478 g was added dropwise thereto. After completion of dropping, the mixture was stirred for 3 hours, separated from waste acid and washed with water. After azeotropic dehydration, 6 g (0.15 mol) of KOH was added, and the mixture was heated to reflux at 150 ° C. overnight. After neutralization with 27 g (0.25 mol) of trimethylchlorosilane and 24.5 g (0.25 mol) of potassium acetate and filtration, the solvent was distilled off under reduced pressure to obtain an average formula (PhSiO _1.5 ) _0.8 (Me ₂ ViSiO _{0. 5} ) A phenyl group-containing silicone resin 4 represented by _0.2 was synthesized. The weight average molecular weight in terms of polystyrene as measured by GPC using THF as a solvent was 1800, and the vinyl equivalent was 0.131 mol / 100 g.

Table 1 below summarizes these synthesis examples.

[Preparation Example 1]
100 g of vinyl resin A1 prepared in Synthesis Example 1, 100 g of hydrogen silicone resin B1 prepared in Synthesis Example 2, 0.2 g of vinyl silicone modified solution of chloroplatinic acid (platinum concentration 1% by mass), acetylene alcohol as a reaction inhibitor A silicone resin composition C1 was prepared by mixing 0.6 g of ethynylcyclohexanol of the system, 6.0 g of the adhesion promoter 1 of the following structural formula (3) as an adhesion promoter, and 50 g of YAG phosphor. From the silicone resin composition C1, an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) is used to form a film molding F1 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm and 0.1 mm. Manufactured. The softening point of this film was 47 ° C. However, an attempt was made to produce a 0.01 mm film, but it was not possible because the phosphor had a larger particle size than the film thickness.
R ″ is the above group, m is an integer of 1 to 5 (average: 3), and m ′ is an integer of 0 to 3 (average: 1).

[Preparation Example 2]
100 g of vinyl resin A1 prepared in Synthesis Example 1, 100 g of hydrogen silicone resin B1 prepared in Synthesis Example 2, 0.2 g of vinyl silicone modified solution of chloroplatinic acid (platinum concentration 1% by mass), acetylene alcohol as a reaction inhibitor A silicone resin composition C2 was prepared by mixing 0.6 g of ethynylcyclohexanol of the system, 6.0 g of the above-mentioned adhesion promoter 1 as an adhesion promoter, and 450 g of YAG phosphor. From this silicone resin composition C2, an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) is used to form a film molded product F2 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm. Manufactured. The softening point of this film was 58 ° C.

[Preparation Example 3]
100 g of vinyl resin A1 prepared in Synthesis Example 1, 100 g of hydrogen silicone resin B1 prepared in Synthesis Example 2, 0.2 g of vinyl silicone modified solution of chloroplatinic acid (platinum concentration 1% by mass), acetylene alcohol as a reaction inhibitor A silicone resin composition obtained by mixing 0.6 g of ethynylcyclohexanol of the above, 6.0 g of the above-mentioned adhesion-imparting agent 1 as an adhesion-imparting agent, and 50 g of TYPEKE PF-691 (manufactured by Ishihara Sangyo Co., Ltd.) as a white pigment. C3 was prepared. From the silicone resin composition C3, a film molded product F3 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm using an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) Manufactured. The softening point of this film was 46 ° C.

[Preparation Example 4]
100 g of vinyl resin A1 prepared in Synthesis Example 1, 100 g of hydrogen silicone resin B1 prepared in Synthesis Example 2, 0.2 g of vinyl silicone modified solution of chloroplatinic acid (platinum concentration 1% by mass), acetylene alcohol as a reaction inhibitor A silicone resin composition C4 was prepared by mixing 0.6 g of ethynylcyclohexanol, 6.0 g of adhesion imparting agent 1 as an adhesion imparting agent, and 450 g of Type PF-691 (Ishihara Sangyo Co., Ltd.) as a white pigment. Was prepared. From the silicone resin composition C4, a film molded product F4 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm using an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) Manufactured. The softening point of this film was 66 ° C.

[Preparation Example 5]
100 g of vinyl resin A1 prepared in Synthesis Example 1, 100 g of hydrogen silicone resin B1 prepared in Synthesis Example 2, 0.2 g of vinyl silicone modified solution of chloroplatinic acid (platinum concentration 1% by mass), acetylene alcohol as a reaction inhibitor A transparent silicone resin composition C5 was prepared by mixing 0.6 g of the ethynylcyclohexanol of the system and 6.0 g of the adhesion imparting agent 1 as the adhesion imparting agent. From the silicone resin composition C5, an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) is used to form a film molding F5 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm. Manufactured. The softening point of this film was 41 ° C.

[Preparation Example 6]
In Preparation Example 1, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A2 prepared in Synthesis Example 3 and 100 g of hydrogen silicone resin B2 prepared in Synthesis Example 4, respectively, were used. The same operation as in No. 1 was performed to prepare a silicone resin composition C6. From the silicone resin composition C6, a film molded product F6 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 46 ° C.

[Preparation Example 7]
In Preparation Example 2, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A2 prepared in Synthesis Example 3 and 100 g of hydrogen silicone resin B2 prepared in Synthesis Example 4 were used, respectively. The same operation as 2 was performed to prepare a silicone resin composition C7. From the silicone resin composition C7, a film molded product F7 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 54 ° C.

[Preparation Example 8]
In Preparation Example 3, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A2 prepared in Synthesis Example 3 and 100 g of hydrogen silicone resin B2 prepared in Synthesis Example 4 were used, respectively. The same operation as in No. 3 was performed to prepare a silicone resin composition C8. From the silicone resin composition C8, a film molded product F8 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 48 ° C.

[Preparation Example 9]
In Preparation Example 4, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A2 prepared in Synthesis Example 3 and 100 g of hydrogen silicone resin B2 prepared in Synthesis Example 4 were used, respectively. The same operation was performed to prepare a silicone resin composition C9. From the silicone resin composition C9, a film molded product F9 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 57 ° C.

[Preparation Example 10]
In Preparation Example 5, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A2 prepared in Synthesis Example 3 and 100 g of hydrogen silicone resin B2 prepared in Synthesis Example 4 were used, respectively. The same operation was performed to prepare a silicone resin composition C10. From the silicone resin composition C10, a film molded product F10 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 37 ° C.

[Preparation Example 11]
In Preparation Example 1, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A3 prepared in Synthesis Example 5 and 100 g of hydrogen silicone resin B3 prepared in Synthesis Example 6 were used, respectively. The same operation was performed to prepare a silicone resin composition C11. From the silicone resin composition C11, a film molded product F11 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 35 ° C.

[Preparation Example 12]
In Preparation Example 2, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A3 prepared in Synthesis Example 5 and 100 g of hydrogen silicone resin B3 prepared in Synthesis Example 6 were used, respectively. The same operation was performed to prepare a silicone resin composition C12. From the silicone resin composition C12, a film molded product F12 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 43 ° C.

[Preparation Example 13]
In Preparation Example 3, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A3 prepared in Synthesis Example 5 and 100 g of hydrogen silicone resin B3 prepared in Synthesis Example 6 were added, respectively. The same operation was performed to prepare a silicone resin composition C13. From the silicone resin composition C13, a film molded product F13 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 31 ° C.

[Preparation Example 14]
In Preparation Example 4, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A3 prepared in Synthesis Example 5 and 100 g of hydrogen silicone resin B3 prepared in Synthesis Example 6 were added, respectively. The same operation was performed to prepare a silicone resin composition C14. From the silicone resin composition C14, a film molded product F14 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 45 ° C.

[Preparation Example 15]
In Preparation Example 5, instead of vinyl resin A1 and hydrogen silicone resin B1, 100 g of vinyl resin A3 prepared in Synthesis Example 5 and 100 g of hydrogen silicone resin B3 prepared in Synthesis Example 6 were used, respectively. The same operation was performed to prepare a silicone resin composition C15. From the silicone resin composition C15, a film molded product F15 having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm, and 0.1 mm was produced. The softening point of this film was 28 ° C.

[Comparative Preparation Example 1]
100 g of vinyl resin A4 prepared in Comparative Synthesis Example 7 and branched organohydrogenpolysiloxane B4 represented by the following formula (4):
Hydrogen gas generation amount 170.24 ml / g (SiH group equivalent 0.76 mol / 100 g)
17.24 g, vinyl silicone-modified solution of chloroplatinic acid (platinum concentration 1 mass%) 0.2 g, acetylene alcohol-based ethynylcyclohexanol 0.6 g as a reaction inhibitor, and adhesion imparting agent 1 as an adhesion imparting agent 6. 0 g and 50 g of YAG phosphor were mixed to prepare a silicone resin composition C′1. From the silicone resin composition C′1, film forming having an automatic coating apparatus PI-1210 (manufactured by Tester Sangyo Co., Ltd.) having a length of 150 mm × width of 150 mm, a thickness of 0.025 mm, 0.05 mm and 0.1 mm Although the thing F'1 was manufactured, all were high-viscosity bodies with a tack | tuck, and could not be utilized as a film.

Table 2 below summarizes these examples.

[Examples 1 to 49, Comparative Examples 1 to 14]
[Thickening the film]
In order to thicken the film, the films were laminated with a pressure type vacuum laminator V130 (manufactured by Nichigo Morton Co., Ltd.) and laminated at a temperature of 80 ° C., 0.075 mm for the films of Examples 1 to 15, Lamination was performed so as to have a predetermined thickness of 0.25 mm, 0.275 mm, 0.30 mm, 0.35 mm, 0.40 mm, 0.60 mm, 0.70 mm, and 0.80 mm. Further, when the thickness was adjusted to 1.5 mm, voids were generated inside the film and could not be prepared well.

[Production of COB substrate]
As shown in FIG. 1, gold plating (4) is applied on a 15 mm × 15 mm × 0.1 mm aluminum core substrate (1), and four LED chips (0.2 mm × 0.2 mm × 0.15 mm) in the middle ( After 2) was die-bonded and cured, a gold wire (3) of a bonding wire having a height h of 300 μm as shown in FIG. Thereafter, LPS-2428TW (manufactured by Shin-Etsu Chemical Co., Ltd.) is used as a dam material around the dam, and a dam having a height t of 350 μm is formed by dispensing, heated at 150 ° C. for 4 hours, and cured to form a white dam material (5 )created.

  Similarly, a gold wire (3) of a bonding wire having a height h of 250 μm as shown in FIG. 3 is formed to produce a COB substrate 2, and then a white dam material (5) having a height t of 300 μm is produced. did.

  As shown in Tables 3 and 5, with respect to the COB substrates 1 and 2 prepared as described above, the film molded products F1 to F15 prepared in Preparation Examples 1 to 15 are separated into a wire contact side and a wire non-contact side. The silicone resin film which combined each film molding was mounted. Thereafter, a pressure type vacuum laminator V130 (manufactured by Nichigo Morton Co., Ltd.) was used as a bonding apparatus, the bonding conditions were set to 80 ° C., a vacuum time of 40 seconds and 0.1 MPa, and the pressure time was set to 20 seconds. The placed silicone resin film was heated and softened, and the silicon resin film was softened with an elastomeric pressure member, and was adhered to and adhered to the optical semiconductor element of the COB substrate. After bonding, the film was fully cured by heating at 150 ° C. for 4 hours to obtain Examples 1 to 22 and Comparative Examples 1 to 6.

  Tables 3 to 5 show the thickness and type of the film used when the film molding is bonded and the hardness of the diaphragm and the evaluation of the bonded film. The evaluation of the bonded film is to confirm the smoothness of the sealing surface after the main curing, cut the film after the curing in the thickness direction, whether there are voids and wire abnormalities, and the phosphor sedimentation. It was observed visually.

Table 3 shows Examples 1 to 6 and Comparative Examples 1 to 3 in the COB substrate 1. Tables 4 and 5 show Examples 7 to 16, Examples 17 to 22, and Comparative Examples 4 to 6 for the COB substrate 2, respectively.

[Pre-mold package production]
LED chip (0.2 mm × 0.2 mm × 0.15 mm) (2) with respect to a pre-molded package (package 1) in which a reflector (6) having a height t ′ of 350 μm as shown in FIG. Was bonded and cured, and then a gold wire (3) of a bonding wire having a height h ′ of 250 μm was formed by a wire bonder.

  Similarly, an LED chip (0.2 mm × 0.2 mm × 0.15 mm) is applied to a premolded package (package 2) in which a reflector (6) having a height t ′ of 800 μm as shown in FIG. ) After (2) was die-bonded and cured, a gold wire (3) of a bonding wire having a height h ′ of 250 μm was formed with a wire bonder.

[Examples 23 to 49 and Comparative Examples 7 to 14]
The pre-molded packages 1 and 2 created as described above were bonded together by the same manufacturing steps as in the examples of the COB substrate and combinations shown in Tables 6-8. Tables 6 to 8 show the thickness and type of the film used when the film molded product is bonded together, the hardness of the diaphragm, and the evaluation of the bonded film. The evaluation of the bonded film is to confirm the smoothness of the sealing surface after the main curing, cut the film after the curing in the thickness direction, whether there are voids and wire abnormalities, and the phosphor sedimentation. It was observed visually.

Table 6 shows Examples 23 to 28 and Comparative Examples 7 to 9 in the package 1. Tables 7 and 8 show Examples 29 to 49 and Comparative Examples 10 to 14 in the package 2.

[Examples 50 to 51, Comparative Examples 15 to 18]
In addition, when using a vacuum laminator, a rubber diaphragm with a hardness of A70 is used, and a cured silicone sheet of various hardnesses with a thickness of 8 mm is placed as a pressure member between the diaphragm and the silicone resin film. And pasted together.

Except for Comparative Example 18, the evaluation was performed under the same conditions except for the hardness of the cured silicone sheet used as the pressure member. Specifically, a glass epoxy substrate (D85) having a thickness of 8 mm was used in Comparative Example 17 and an iron plate was used in Comparative Example 18, and bonding was performed using a vacuum press at a heating temperature of 80 ° C. and a pressure of 2 MPa. Table 9 below shows.

[Evaluation]
As shown in Tables 3-9, by using a diaphragm having a hardness of A20-50, void generation, wire abnormality, smoothness disturbance, and phosphor settling are eliminated, and the silicone resin sheet is a wire bonding LED chip. It can be seen that they are pasted together.

  From the above, void generation and wire deformation can be achieved by pressing the film surface with a pressure member having a hardness of A20 to A50 or pressing the film through a support film and bonding the silicone resin sheet to the LED chip. In addition, an optical semiconductor device having excellent surface smoothness and phosphor dispersibility can be provided.

  Since the method for sealing an optical semiconductor device according to the present invention can lower the yield at the time of manufacturing the optical semiconductor device as compared with the conventional method, the optical semiconductor device can be manufactured efficiently and in large quantities.

1 Aluminum core substrate 2 LED chip 3 Gold wire (bonding wire)
4 Gold plating 5 White dam material 6 Reflector 7 Silver plating lead frame 8 Silicone resin film h, h ′ Wire height (μm)
t, t 'Silicone resin film thickness (μm)

Claims (10)

An optical semiconductor device sealing method in which an optical semiconductor element electrically connected by wire bonding is placed on a substrate,
(I) a placing step of placing a silicone resin film on the optical semiconductor element;
(Ii) an adhesion process in which the silicone resin film is heated and softened while being pressurized through an elastomeric pressure member and is in close contact with the optical semiconductor element;
(Iii) a curing step of curing the silicone resin film by heating the silicone resin film to a temperature at which it can be cured, or
Of an optical semiconductor device characterized in that the elastomer pressure member has a hardness of 20 to 50 as a type A durometer hardness measured by the method described in JIS K 6253-3: 2012. Sealing method.   2. The sealing of an optical semiconductor device according to claim 1, wherein in the adhesion step, the silicone resin film is softened and pressurized under a pressure condition of 0.05 to 1.00 MPa. Method.   3. The method for sealing an optical semiconductor device according to claim 1, wherein the adhesion step (ii) is performed using a vacuum laminator provided with an elastomeric diaphragm. The silicone resin film has the following components (A) to (D):
(A) The following formula (1) having an alkenyl group bonded to at least two silicon atoms in one molecule;

(In the formula, R ¹ is a group selected from a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, and an alkenyl group having 2 to 10 carbon atoms, However, it has at least two or more alkenyl groups in one molecule, and 0 ≦ a <0.5, 0 <b <0.7, 0 <c ≦ 0.85, 0 <d <0.3, However, a + b + c + d = 1.0)
A network-organopolysiloxane represented by
(B) an organohydrogenpolysiloxane having hydrogen atoms bonded to at least two or more silicon atoms in one molecule;
(C) an addition reaction catalyst, and (D) a film-like molded article of an addition-curable organopolysiloxane composition containing at least one selected from phosphors and inorganic pigments, In the organopolysiloxane, 30 to 99 mol% of the siloxane unit (D unit) represented by R ¹ ₂ SiO _2/2 is 5 to 50 continuous siloxane units. The method for sealing an optical semiconductor device according to claim 1.   The method for sealing an optical semiconductor device according to claim 4, wherein the addition-curable organopolysiloxane composition is solid or semisolid at 23 ° C.   The optical semiconductor according to any one of claims 1 to 5, wherein the silicone resin film is obtained by bonding a silicone resin protective film having a thickness of 1 to 1,000 µm to at least one side of the film. Device sealing method. The silicone resin protective film comprises the following components (A) to (C):
(A) The following formula (1) having an alkenyl group bonded to at least two silicon atoms in one molecule;

(In the formula, R ¹ is a group selected from a monovalent aromatic hydrocarbon group having 6 to 12 carbon atoms, a monovalent aliphatic hydrocarbon group having 1 to 12 carbon atoms, and an alkenyl group having 2 to 10 carbon atoms, However, it has at least two or more alkenyl groups in one molecule, and 0 ≦ a <0.5, 0 <b <0.7, 0 <c ≦ 0.85, 0 <d <0.3, However, a + b + c + d = 1.0)
A network-organopolysiloxane represented by
(B) an organohydrogenpolysiloxane having a hydrogen atom bonded to at least two or more silicon atoms in one molecule, and (C) an addition-curable organopolysiloxane composition containing an addition reaction catalyst and containing no phosphor. In the organopolysiloxane of component (A) of the composition, 5 to 50 of 30 to 99 mol% of the siloxane unit (D unit) represented by R ¹ ₂ SiO _2/2 The method for sealing an optical semiconductor device according to claim 6, wherein the siloxane unit is a continuous siloxane unit.   The method for sealing an optical semiconductor device according to claim 6 or 7, wherein the silicone resin film is obtained by bonding the silicone resin protective film to a side opposite to a surface in contact with the optical semiconductor element. .   The thickness of the silicone resin film is adjusted and used so as to be thicker in a range of 10 to 500 μm with respect to the height from the substrate surface of the optical semiconductor device to the highest point of the bonding wire. The method for sealing an optical semiconductor device according to any one of claims 1 to 8.   The optical semiconductor device manufactured by the sealing method of the optical semiconductor device of any one of Claims 1-9.