JP2016021472A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 73
- 210000000746 body region Anatomy 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 17
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 claims description 5
- 238000011084 recovery Methods 0.000 abstract description 7
- 230000003071 parasitic effect Effects 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 230000012447 hatching Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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Abstract
【解決手段】 第1境界トレンチ22cと第2境界トレンチ22eの間に位置するダイオード領域16と第1及び第2IGBT領域14、18を有し、第1及び第2IGBT領域の夫々に、エミッタ領域と、ボディ領域54が形成されており、各ボディ領域54がボディコンタクト部54cを有しており、ダイオード領域16にアノード領域50が形成されており、アノード領域50がアノードコンタクト部50cを有し、第1境界トレンチ22cと第2境界トレンチ22eの間の間隔が200μm以上であり、ダイオード領域16内のアノードコンタクト部50cの面積比率が、第1IGBT領域14内のボディコンタクト部54cの面積比率、及び、第2IGBT領域18内のボディコンタクト部54cの面積比率の何れよりも低い半導体装置。
【選択図】図2
Description
(特徴1) ダイオード領域内の表面に、第1境界トレンチに沿って伸びる複数の第3トレンチが形成されていてもよい。ダイオード領域内の複数の第3トレンチと、第1境界トレンチと、第2境界トレンチのいずれか2つに挟まれたダイオードセル領域の夫々に、前記アノードコンタクト部を含む前記アノード領域が形成されていてもよい。
(特徴2) 第1IGBT領域内及び第2IGBT領域内の夫々に、第1境界トレンチに沿って伸びる複数の第4トレンチが形成されていてもよい。第4トレンチの夫々の内部に、ゲート絶縁膜とゲート電極が形成されていてもよい。複数の第4トレンチと、第1境界トレンチと、第2境界トレンチのいずれか2つに挟まれたIGBTセル領域の夫々に、エミッタ領域と、ボディコンタクト部を含むボディ領域が形成されていてもよい。
(特徴3) 各ダイオードセル領域内において、ダイオードセル領域内の表面に占めるアノードコンタクト部の面積の比率が、IGBTセル領域内の表面に占めるボディコンタクト部の面積の比率の何れよりも低くてもよい。
(特徴4) 各アノードコンタクト部が、第3トレンチに沿って伸びていてもよい。
(特徴5) 各ダイオードセル領域が、互いから分離された複数のアノードコンタクト部を有していてもよい。複数のアノードコンタクト部が、各ダイオードセル領域において、第3トレンチに沿って配列されていてもよい。
(特徴6) 第1境界トレンチに隣接するダイオードセル領域内の各アノードコンタクト部が、第1境界トレンチに隣接するIGBTセル領域内のエミッタ領域から見て第1境界トレンチの幅方向の位置に配置されている。
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
12a:表面
12b:裏面
14:第1IGBT領域
16:ダイオード領域
18:第2IGBT領域
20:外周領域
22:トレンチ
24:絶縁膜
26:ゲート電極
28:制御電極
30:層間絶縁膜
32:表面電極
34:裏面電極
40:セル領域
42:セル領域
50:アノード領域
50a:高濃度領域
50b:低濃度領域
50c:コンタクト部
52:エミッタ領域
54:ボディ領域
54a:高濃度領域
54b:低濃度領域
54c:コンタクト部
56:ドリフト領域
58:コレクタ領域
60:カソード領域
62:コレクタ領域
Claims (7)
- 半導体装置であって、
半導体基板と、前記半導体基板の表面に形成された表面電極と、前記半導体基板の裏面に形成された裏面電極を備えており、
前記表面に、第1境界トレンチと、前記第1境界トレンチに沿って伸びる第1トレンチと、前記第1境界トレンチを挟んで前記第1トレンチの反対側に配置されているとともに前記第1境界トレンチに沿って伸びる第2境界トレンチと、前記第2境界トレンチを挟んで前記第1境界トレンチの反対側に配置されているとともに前記第1境界トレンチに沿って伸びる第2トレンチが形成されており、
前記半導体基板が、前記第1トレンチと前記第1境界トレンチの間に位置する第1IGBT領域と、前記第1境界トレンチと前記第2境界トレンチの間に位置するダイオード領域と、前記第2トレンチと前記第2境界トレンチの間に位置する第2IGBT領域を備えており、
前記第1トレンチ及び前記第2トレンチのそれぞれの内部に、ゲート絶縁膜と、前記ゲート絶縁膜によって前記半導体基板から絶縁されたゲート電極が配置されており、
前記各ゲート電極と前記表面電極の間に、層間絶縁膜が配置されており、
前記第1境界トレンチ及び前記第2境界トレンチのそれぞれの内部に絶縁層が配置されており、
前記第1IGBT領域及び前記第2IGBT領域の夫々に、前記表面電極と前記ゲート絶縁膜に接しているn型のエミッタ領域と、前記表面電極に接するとともに前記エミッタ領域の裏面側で前記ゲート絶縁膜に接しているp型のボディ領域が形成されており、
前記各ボディ領域が、前記表面におけるp型不純物濃度が1×1018atoms/cm3以上であるとともに前記表面電極に接しているボディコンタクト部を有しており、
前記ダイオード領域に、前記表面電極に接しているp型のアノード領域が形成されており、
前記アノード領域が、前記表面におけるp型不純物濃度が1×1018atoms/cm3以上であるとともに前記表面電極に接しているアノードコンタクト部を有しており、
前記各ボディ領域及び前記アノード領域の裏面側の領域に、前記第1IGBT領域、前記第2IGBT領域及び前記ダイオード領域に跨って伸びるn型領域が形成されており、
前記n型領域が、前記ダイオード領域内の少なくとも一部で前記裏面電極に接しており、
前記第1IGBT領域内の前記n型領域の裏面側の領域の少なくとも一部、及び、前記第2IGBT領域内の前記n型領域の裏面側の領域の少なくとも一部に、前記裏面電極に接するp型のコレクタ領域が形成されており、
前記第1境界トレンチと前記第2境界トレンチの間の間隔が200μm以上であり、
前記ダイオード領域内の前記表面に占める前記アノードコンタクト部の面積の比率が、前記第1IGBT領域内の前記表面に占める前記ボディコンタクト部の面積の比率、及び、前記第2IGBT領域内の前記表面に占める前記ボディコンタクト部の面積の比率の何れよりも低い、
半導体装置。 - 前記ダイオード領域内の前記表面に、前記第1境界トレンチに沿って伸びる複数の第3トレンチが形成されており、
前記ダイオード領域内の前記複数の第3トレンチと、前記第1境界トレンチと、前記第2境界トレンチのいずれか2つに挟まれたダイオードセル領域の夫々に、前記アノードコンタクト部を含む前記アノード領域が形成されている、
請求項1の半導体装置。 - 前記第1IGBT領域内及び前記第2IGBT領域内の夫々に、前記第1境界トレンチに沿って伸びる複数の第4トレンチが形成されており、
前記第4トレンチの夫々の内部に、前記ゲート絶縁膜と前記ゲート電極が形成されており、
前記複数の第4トレンチと、前記第1境界トレンチと、前記第2境界トレンチのいずれか2つに挟まれたIGBTセル領域の夫々に、前記エミッタ領域と、前記ボディコンタクト部を含む前記ボディ領域が形成されている、
請求項2の半導体装置。 - 前記各ダイオードセル領域内において、前記ダイオードセル領域内の前記表面に占める前記アノードコンタクト部の面積の比率が、前記IGBTセル領域内の前記表面に占める前記ボディコンタクト部の面積の比率の何れよりも低い請求項3の半導体装置。
- 前記各アノードコンタクト部が、前記第3トレンチに沿って伸びている請求項2〜4のいずれか一項の半導体装置。
- 前記各ダイオードセル領域が、互いから分離された複数の前記アノードコンタクト部を有しており、
前記複数のアノードコンタクト部が、前記各ダイオードセル領域において、前記第3トレンチに沿って配列されている請求項2〜4のいずれか一項の半導体装置。 - 前記第1境界トレンチに隣接する前記ダイオードセル領域内の前記各アノードコンタクト部が、前記第1境界トレンチに隣接する前記IGBTセル領域内の前記エミッタ領域から見て前記第1境界トレンチの幅方向の位置に配置されている請求項6の半導体装置。
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EP15821742.2A EP3171410B1 (en) | 2014-07-14 | 2015-05-18 | Semiconductor device |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017168829A (ja) * | 2016-03-11 | 2017-09-21 | 富士電機株式会社 | 半導体装置 |
JP2018073911A (ja) * | 2016-10-26 | 2018-05-10 | 株式会社デンソー | 半導体装置 |
JP2018078153A (ja) * | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
JP2021019155A (ja) * | 2019-07-23 | 2021-02-15 | 株式会社デンソー | 半導体装置 |
US11955477B2 (en) | 2022-03-22 | 2024-04-09 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2883727B1 (en) * | 2013-12-16 | 2017-02-08 | Inalfa Roof Systems Group B.V. | Drive mechanism and open roof construction provided therewith |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010171385A (ja) * | 2008-12-24 | 2010-08-05 | Denso Corp | 半導体装置 |
WO2013030943A1 (ja) * | 2011-08-30 | 2013-03-07 | トヨタ自動車株式会社 | 半導体装置 |
WO2013111568A1 (ja) * | 2012-01-23 | 2013-08-01 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
WO2014097454A1 (ja) * | 2012-12-20 | 2014-06-26 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140678A (en) * | 1995-06-02 | 2000-10-31 | Siliconix Incorporated | Trench-gated power MOSFET with protective diode |
US7084456B2 (en) * | 1999-05-25 | 2006-08-01 | Advanced Analogic Technologies, Inc. | Trench MOSFET with recessed clamping diode using graded doping |
JP5103830B2 (ja) | 2006-08-28 | 2012-12-19 | 三菱電機株式会社 | 絶縁ゲート型半導体装置 |
JP4483918B2 (ja) * | 2007-09-18 | 2010-06-16 | 株式会社デンソー | 半導体装置 |
JP2011210800A (ja) * | 2010-03-29 | 2011-10-20 | Toyota Motor Corp | 半導体装置 |
JP2013201360A (ja) | 2012-03-26 | 2013-10-03 | Toshiba Corp | 半導体装置 |
-
2014
- 2014-07-14 JP JP2014144283A patent/JP6221974B2/ja active Active
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010171385A (ja) * | 2008-12-24 | 2010-08-05 | Denso Corp | 半導体装置 |
WO2013030943A1 (ja) * | 2011-08-30 | 2013-03-07 | トヨタ自動車株式会社 | 半導体装置 |
WO2013111568A1 (ja) * | 2012-01-23 | 2013-08-01 | 株式会社デンソー | 半導体装置およびその製造方法 |
JP2014075582A (ja) * | 2012-09-12 | 2014-04-24 | Fuji Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
WO2014097454A1 (ja) * | 2012-12-20 | 2014-06-26 | トヨタ自動車株式会社 | 半導体装置 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017168829A (ja) * | 2016-03-11 | 2017-09-21 | 富士電機株式会社 | 半導体装置 |
JP2018073911A (ja) * | 2016-10-26 | 2018-05-10 | 株式会社デンソー | 半導体装置 |
JP2018078153A (ja) * | 2016-11-07 | 2018-05-17 | トヨタ自動車株式会社 | 半導体装置 |
JP2021019155A (ja) * | 2019-07-23 | 2021-02-15 | 株式会社デンソー | 半導体装置 |
JP7283287B2 (ja) | 2019-07-23 | 2023-05-30 | 株式会社デンソー | 半導体装置 |
US11955477B2 (en) | 2022-03-22 | 2024-04-09 | Kabushiki Kaisha Toshiba | Semiconductor device and semiconductor circuit |
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