JP2016012709A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2016012709A
JP2016012709A JP2014135042A JP2014135042A JP2016012709A JP 2016012709 A JP2016012709 A JP 2016012709A JP 2014135042 A JP2014135042 A JP 2014135042A JP 2014135042 A JP2014135042 A JP 2014135042A JP 2016012709 A JP2016012709 A JP 2016012709A
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heat dissipation
sealing body
resin sealing
semiconductor device
dissipation substrate
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孝史 ▲配▼島
孝史 ▲配▼島
Takashi Haijima
健二 古原
Kenji Furuhara
健二 古原
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Sanken Electric Co Ltd
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Sanken Electric Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device which reduces warpage of a resin sealing body and a heat dissipation substrate, and improves adhesion and radiation performance of a whole package.SOLUTION: A semiconductor device of the present embodiment comprises: a semiconductor chip; a die pad for mounting the semiconductor chip; a heat dissipation substrate bonded to the other principal surface of the die pad; and a resin sealing body for resin sealing with an undersurface of the heat dissipation substrate being exposed, in which screw holes for fastening the resin sealing body by screws are provided and washers arranged between screw heads and the resin sealing body overlap ends of the heat dissipation substrate in a longer direction in a projection plane to sandwich the heat dissipation substrate.

Description

本発明は、半導体チップが樹脂封止体中に封止され、半導体チップの放熱をおこなう放熱基板が樹脂封止体の下面に露出した構成を具備する半導体装置に関する。
The present invention relates to a semiconductor device having a configuration in which a semiconductor chip is sealed in a resin sealing body, and a heat dissipation substrate that radiates heat from the semiconductor chip is exposed on a lower surface of the resin sealing body.

近年、取り扱いに優れ、高放熱性且つ高信頼性の樹脂封止型電力用半導体装置が求められている。リードフレームに連接するダイパッドの上面に半導体チップを載置し、絶縁性樹脂シートを介してダイパッドの下面と放熱基板の上面を接着し、放熱基板の下面が露出するように、半導体チップ、ダイパッド、絶縁性樹脂シートおよび放熱基板を樹脂封止するモールド樹脂とを備えている。
In recent years, there has been a demand for resin-encapsulated power semiconductor devices with excellent handling, high heat dissipation, and high reliability. The semiconductor chip is placed on the upper surface of the die pad connected to the lead frame, and the lower surface of the die pad and the upper surface of the heat dissipation substrate are bonded via an insulating resin sheet so that the lower surface of the heat dissipation substrate is exposed. And an insulating resin sheet and a mold resin for sealing the heat dissipation substrate.

また、半導体装置では、半導体装置を放熱フィンに固定するためのビス取り付け穴が設けられている。この穴にビスを締めつけることにより、外部の放熱フィン、あるいは回路基板に半導体装置の放熱基板を密着させて取り付けられる。これによって半導体チップにて発生した熱を、放熱基板から半導体装置の外部へと放熱することができる。(特許文献1参照)
Further, in the semiconductor device, a screw mounting hole for fixing the semiconductor device to the heat radiating fin is provided. By tightening a screw in this hole, the heat radiation board of the semiconductor device is attached in close contact with an external heat radiation fin or a circuit board. Thus, the heat generated in the semiconductor chip can be radiated from the heat dissipation substrate to the outside of the semiconductor device. (See Patent Document 1)

特開2005−109100号公報JP-A-2005-109100

一般的に、放熱基板は、樹脂封止されるとわずかに湾曲している。また、半導体チップの動作発熱でも、放熱基板と樹脂封止体との熱膨張差により、湾曲してしまう。
Generally, the heat dissipation substrate is slightly curved when sealed with resin. Further, even the heat generated by the operation of the semiconductor chip is bent due to a difference in thermal expansion between the heat dissipation substrate and the resin sealing body.

従来技術によれば、樹脂封止体であるパッケージの長手方向の長さが、短手方向よりも相対的に長い、即ちアスペクト比が高い形状である場合、ビス穴近傍では、ビス止めによる押さえ効果があるが、パッケージ中央部の押さえ効果が低下する課題がある。
According to the prior art, when the length of the package, which is a resin-encapsulated body, is relatively longer than that of the short side, that is, the shape has a high aspect ratio, in the vicinity of the screw hole, it is pressed by a screw stopper. Although effective, there is a problem that the pressing effect at the center of the package is reduced.

従って、本発明は、上述した課題を解決するためになされたものであり、樹脂封止体と放熱基板の反りを低減し、パッケージ全体の密着性と放熱性を向上した半導体装置を提供することを目的とする。
Accordingly, the present invention has been made to solve the above-described problems, and provides a semiconductor device in which the warpage between the resin sealing body and the heat dissipation substrate is reduced and the adhesion and heat dissipation of the entire package are improved. With the goal.


上述の課題を解決するために、本発明は以下に掲げる構成とした。
本発明の半導体装置は、半導体チップと、半導体チップを載置するダイパッドと、ダイパッドのもう一方の主面に接合する放熱基板と、放熱基板の下面を露出させて樹脂封止する樹脂封止体と、樹脂封止体をビス止め固定させるビス穴が設けられ、ビス頭部と樹脂封止体との間に配置されたワッシャーと、放熱基板の長手方向端部とが、投影面の重なりで挟持されることを特徴とする。
また、ビス穴の周囲に、ワッシャーが入る凹部が設けられていることを特徴とする。

In order to solve the above-described problems, the present invention is configured as follows.
A semiconductor device according to the present invention includes a semiconductor chip, a die pad on which the semiconductor chip is placed, a heat dissipation substrate that is bonded to the other main surface of the die pad, and a resin sealing body that is resin-sealed by exposing the lower surface of the heat dissipation substrate. And a screw hole for fixing the resin sealing body with screws, and a washer disposed between the screw head and the resin sealing body and the longitudinal end of the heat dissipation substrate are overlapped by the projection surface. It is pinched.
In addition, a recess for receiving a washer is provided around the screw hole.

本発明は、以上のように構成されているので、樹脂封止体と放熱基板の反りを低減し、パッケージ全体の密着性と放熱性を向上した半導体装置を提供することができる。
Since this invention is comprised as mentioned above, the curvature of a resin sealing body and a thermal radiation board | substrate can be reduced, and the semiconductor device which improved the adhesiveness and heat dissipation of the whole package can be provided.

本発明の実施例1に係る半導体装置の平面概念図(a)と断面概念図(b)である。1A is a conceptual plan view of a semiconductor device according to a first embodiment of the present invention, and FIG. 本発明の実施例1に係る半導体装置のビス止め部の断面概念図である。It is a section conceptual diagram of a screw stop part of a semiconductor device concerning Example 1 of the present invention.

以下、本発明を実施するための形態について、図を参照して詳細に説明する。なお以下の図面の記載において、同一または類似の部分には、同一または類似の符号で表している。但し、図面は模式的なものであり、寸法関係の比率等は現実のものとは異なる。したがって、具体的な寸法等は以下の説明を照らし合わせて判断するべきものである。また、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることは勿論である。
また、以下に示す実施の形態は、この発明の技術的思想を具体化するための例示であって、この発明の実施の形態は、構成部品の材質、形状、構造、配置等を下記のものに特定するものではない。この発明の実施の形態は、要旨を逸脱しない範囲内で種々変更して実施できる。
DESCRIPTION OF EMBODIMENTS Hereinafter, embodiments for carrying out the present invention will be described in detail with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, the drawings are schematic, and the dimensional relationship ratios and the like are different from the actual ones. Therefore, specific dimensions and the like should be determined in light of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.
The following embodiments are exemplifications for embodying the technical idea of the present invention, and the embodiments of the present invention are described below in terms of the material, shape, structure, arrangement, etc. of the components. It is not something specific. The embodiments of the present invention can be implemented with various modifications without departing from the scope of the invention.

以下、図面を参照して本発明の実施例1に係る半導体装置100を説明する。図1は、本発明の実施例1に係る半導体装置の平面概念図(a)と断面概念図(b)である。
A semiconductor device 100 according to Embodiment 1 of the present invention will be described below with reference to the drawings. FIG. 1A is a conceptual plan view of a semiconductor device according to a first embodiment of the present invention, and FIG.

図1に示すように、半導体装置100は、半導体チップ1、ダイパッド2、放熱基板3、樹脂封止体4から成っている。
As shown in FIG. 1, the semiconductor device 100 includes a semiconductor chip 1, a die pad 2, a heat dissipation substrate 3, and a resin sealing body 4.

半導体チップ1は、ダイパッド2の一方の主面に載置され固定される。例えば、発熱の大きいパワー素子である。ここでは、簡略的に1個のみ図示し、接合材を略している。
The semiconductor chip 1 is placed and fixed on one main surface of the die pad 2. For example, a power element that generates a large amount of heat. Here, only one piece is illustrated in a simplified manner and the bonding material is omitted.

ダイパッド2は、一般的な半導体リードフレームの一部である。ここでは、簡略的にダイパッド2のみ図示し、端子等配線を略している。
The die pad 2 is a part of a general semiconductor lead frame. Here, only the die pad 2 is illustrated in a simplified manner, and wiring such as terminals is omitted.

放熱基板3は、金属板から成り、ダイパッド2とは電気的に絶縁され、絶縁材で接合されている。半導体チップ1で発生する熱を、樹脂封止体4の外部に効率良く放熱するために伝熱性に優れていることが望ましい。例えば、アルミや銅の金属が使用される。さらに、放熱基板3は樹脂封止体4の下面に露出している。
The heat dissipation substrate 3 is made of a metal plate, is electrically insulated from the die pad 2, and is joined by an insulating material. In order to efficiently dissipate the heat generated in the semiconductor chip 1 to the outside of the resin sealing body 4, it is desirable to have excellent heat conductivity. For example, aluminum or copper metal is used. Further, the heat dissipation substrate 3 is exposed on the lower surface of the resin sealing body 4.

樹脂封止体4は、樹脂成形金型とプレス装置を使用して、トランスファーモールドとして、樹脂成形されたものである。例えば、樹脂封止体4には熱硬化性エポキシ樹脂が使用される。
The resin sealing body 4 is resin-molded as a transfer mold using a resin molding die and a press device. For example, a thermosetting epoxy resin is used for the resin sealing body 4.

また、樹脂封止体4は、平面が長方形をしており、長手方向の対向する端部にビス穴41が貫通している。ここにビスにより、図示していない放熱フィン等に半導体装置100の下面を固定することができる。下面は、放熱面であり、樹脂封止体4から放熱基板3が露出している面である。ビスは、例えばM4ネジが使用できる。
In addition, the resin sealing body 4 has a rectangular plane, and a screw hole 41 passes through opposite ends in the longitudinal direction. Here, the lower surface of the semiconductor device 100 can be fixed to a radiating fin or the like (not shown) with screws. The lower surface is a heat radiating surface, and is a surface where the heat radiating substrate 3 is exposed from the resin sealing body 4. For example, an M4 screw can be used as the screw.

ワッシャー5は、ビス頭部と樹脂封止体4の間に挿入する。例えば、ISO規格(新JIS)でみがき丸(大ワッシャー)であり、呼び径X内径×外径×厚みの寸法は、M4X4.3X9X0.8(mm)である。
The washer 5 is inserted between the screw head and the resin sealing body 4. For example, it is a polished round (large washer) according to the ISO standard (new JIS), and the dimension of nominal diameter X inner diameter x outer diameter x thickness is M4X4.3X9X0.8 (mm).

半導体装置100において、放熱基板3の長手方向端部とワッシャー5の位置関係は、投影面で重なっている。すなわち、ワッシャー5と図示していない放熱フィン等に挟持されている状態である。例えば、重なり部L1は0.6mmである。(図2参照)
In the semiconductor device 100, the positional relationship between the end of the heat dissipation substrate 3 in the longitudinal direction and the washer 5 is overlapped on the projection plane. That is, it is in a state of being sandwiched between the washer 5 and a radiation fin (not shown). For example, the overlapping portion L1 is 0.6 mm. (See Figure 2)

次に、上述の実施例1に係る半導体装置の効果を説明する。
Next, effects of the semiconductor device according to the first embodiment will be described.

放熱基板は、平坦性が要求されるが、樹脂封止されると僅かに湾曲してしまう。また、半導体チップの発熱により樹脂封止体の温度が上昇し、放熱基板と樹脂封止体の熱膨張係数が異なるため、半導体装置が変形を生じる。熱膨張係数は、放熱基板より樹脂封止体の方が大きい関係があり、本半導体装置100は、お椀状に反る現象が発生する。すなわち、中央部を基準にパッケージの長手方向の端部が持ちあがってしまうことであり、スマイル反りとも言われる。
The heat dissipation substrate is required to have flatness, but is slightly curved when sealed with resin. Further, the heat of the semiconductor chip raises the temperature of the resin sealing body, and the thermal expansion coefficient differs between the heat dissipation substrate and the resin sealing body, so that the semiconductor device is deformed. The thermal expansion coefficient has a larger relationship with the resin sealing body than the heat dissipation substrate, and the semiconductor device 100 is warped like a bowl. That is, the end of the package in the longitudinal direction is lifted with respect to the center, which is also called a smile warp.

本発明の実施例1に係る半導体装置は、ビス止めの際に、ワッシャー直下に放熱基板を位置させ、ビス締め付け力を利用することによって、放熱基板の反りを矯正することができる。これにより、放熱基板と樹脂封止体の平坦度が改善され、放熱フィンとパッケージのビス締め付け後の密着性も改善され、放熱性懸念を解消することができる。よって、樹脂封止体と放熱基板の反りを低減し、パッケージ全体の密着性と放熱性を向上した半導体装置とすることができる。
The semiconductor device according to the first embodiment of the present invention can correct the warpage of the heat dissipation board by positioning the heat dissipation board directly below the washer and using the screw tightening force when screwing. Thereby, the flatness of the heat dissipation substrate and the resin sealing body is improved, the adhesion between the heat dissipation fin and the package after tightening the screws is also improved, and the heat dissipation concern can be solved. Accordingly, the warpage between the resin sealing body and the heat dissipation substrate can be reduced, and the semiconductor device with improved adhesion and heat dissipation of the entire package can be obtained.

上述のように、本発明を実施するための形態を記載したが、この開示から当業者には様々な代替実施の形態、実施例が可能であることが明らかになるはずである。
As described above, the mode for carrying out the present invention has been described. From this disclosure, it should be apparent to those skilled in the art that various alternative embodiments and examples are possible.

実施例2としては、樹脂封止体4とワッシャー5の接する部分の樹脂にザグリを入れた凹部を形成することができる。この樹脂封止体4の凹部は、ビス穴41の位置と同様に、パッケージの両端に設置する。これにより、反り影響が大きい樹脂体積を削減することができ、その領域における熱膨張係数のミスマッチによる反りを低減することができる。さらにパッケージ全体の密着性と放熱性を向上することができる。
As Example 2, the recessed part which put the counterbore in the resin of the part which the resin sealing body 4 and the washer 5 contact can be formed. The recesses of the resin sealing body 4 are installed at both ends of the package, similarly to the positions of the screw holes 41. As a result, the volume of the resin having a large warping effect can be reduced, and the warpage due to mismatch of the thermal expansion coefficients in the region can be reduced. Furthermore, the adhesiveness and heat dissipation of the entire package can be improved.

また、半導体装置100は、同一のパッケージ内にパワー素子、コントロール素子、保護素子等を納めたIPM(intelligent Power Module)としてもよい。IPMでは、モータ駆動制御において大電流が流れるため、発熱対策が重要であり、本発明によって放熱性の向上が可能である。
The semiconductor device 100 may be an IPM (intelligent power module) in which a power element, a control element, a protection element, and the like are housed in the same package. In IPM, since a large current flows in motor drive control, it is important to take measures against heat generation, and the present invention can improve heat dissipation.

また、半導体チップは、一般的にSi半導体が用いられるが、従来のSi半導体に比べて高温状態での動作が可能であり、またスイッチング速度が速く、低損失である化合物半導体、例えばSiC半導体やGaN半導体等の化合物半導体で構成することもできる。
The semiconductor chip is generally a Si semiconductor, but can operate at a higher temperature than conventional Si semiconductors, and has a high switching speed and low loss, such as a compound semiconductor such as a SiC semiconductor or the like. It can also be composed of a compound semiconductor such as a GaN semiconductor.

1、半導体チップ
2、ダイパッド
3、放熱基板
4、樹脂封止体
41、ビス穴
5、ワッシャー
100、半導体装置
DESCRIPTION OF SYMBOLS 1, Semiconductor chip 2, Die pad 3, Thermal radiation board 4, Resin sealing body 41, Screw hole 5, Washer 100, Semiconductor device

Claims (2)

半導体チップと、前記半導体チップを載置するダイパッドと、前記ダイパッドのもう一方の主面に接合する放熱基板と、前記放熱基板の下面を露出させて樹脂封止する樹脂封止体と、前記樹脂封止体をビス止め固定させるビス穴が設けられた構成を具備する半導体装置であって、ビス頭部と前記樹脂封止体との間に配置されたワッシャーと、前記放熱基板の長手方向端部とが、投影面の重なりで挟持されることを特徴とする半導体装置。
A semiconductor chip; a die pad on which the semiconductor chip is placed; a heat dissipating substrate bonded to the other main surface of the die pad; a resin sealing body that exposes a lower surface of the heat dissipating substrate and encapsulates the resin; and the resin A semiconductor device having a structure provided with a screw hole for fixing a sealing body with screws, a washer disposed between a screw head and the resin sealing body, and a longitudinal end of the heat dissipation substrate The semiconductor device is characterized in that the portion is sandwiched by overlapping projection surfaces.
前記ビス穴の周囲に、前記ワッシャーが入る凹部が設けられていることを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein a recess into which the washer is inserted is provided around the screw hole.
JP2014135042A 2014-06-30 2014-06-30 Semiconductor device Pending JP2016012709A (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125070A (en) * 1994-10-27 1996-05-17 Sanyo Electric Co Ltd Semiconductor device
JP2004165406A (en) * 2002-11-13 2004-06-10 Mitsubishi Electric Corp Power semiconductor device
JP2005109100A (en) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08125070A (en) * 1994-10-27 1996-05-17 Sanyo Electric Co Ltd Semiconductor device
JP2004165406A (en) * 2002-11-13 2004-06-10 Mitsubishi Electric Corp Power semiconductor device
JP2005109100A (en) * 2003-09-30 2005-04-21 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof

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