JP2016006551A - Liquid crystal display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent photo degradation of a transistor having an oxide semiconductor layer, and to increase a margin in alignment of a counter substrate.SOLUTION: Such a configuration is used that a color filter is not disposed on a counter substrate side and that a color filter is disposed in place of an interlayer insulating film on a transistor. In the configuration, an oxide semiconductor layer of a transistor included in each pixel overlaps a red color filter, and a pixel electrode included in each pixel overlaps a red, green, or blue color filter.

Description

The present invention relates to a semiconductor device and a liquid crystal display device. In particular, the present invention relates to a semiconductor device and a liquid crystal display device that control liquid crystal molecules by generating an electric field having a component parallel to a substrate.

One of the technical development policies for liquid crystal display devices is to widen the viewing angle. As a technique for realizing a wide viewing angle, a method is used in which an electric field parallel to the substrate (that is, a horizontal direction) is generated and liquid crystal molecules are moved in a plane parallel to the substrate to control gradation.

As such a system, IPS (In-Plane switching) and FFS (
Fringe-field switching).

In an IPS liquid crystal display device, two comb-shaped electrodes (also referred to as comb-shaped electrodes or comb-shaped electrodes) are provided on one substrate of a pair of substrates. The liquid crystal molecules are moved in a plane parallel to the substrate by a horizontal electric field generated by a potential difference between these electrodes (one of the comb electrodes is a pixel electrode and the other is a common electrode).

In the FFS, a second electrode having an opening below the liquid crystal (for example, a pixel electrode whose voltage is controlled for each pixel) is disposed, and further, a first electrode (for example, a voltage common to all pixels) is disposed below the opening. There is one that arranges a common electrode to be supplied). An electric field is applied between the pixel electrode and the common electrode to control the liquid crystal. Since a horizontal electric field is applied to the liquid crystal, the liquid crystal molecules can be controlled using the electric field. That is, the liquid crystal molecules (so-called homogeneous alignment) aligned in parallel with the substrate can be controlled in the direction parallel to the substrate, so that the viewing angle is widened.

In conventional semiconductor devices and liquid crystal display devices that control liquid crystal molecules, a pixel electrode or a common electrode is used as a light-transmitting conductive film, for example, indium tin oxide (Indium Tin Ox).
ide (ITO)) (see, for example, Patent Document 1).

Japanese Patent No. 3742836

As described above, the pixel electrode or the common electrode is formed of a light-transmitting conductive film, for example, ITO. In order to manufacture a semiconductor device that controls transmissive liquid crystal molecules and a transmissive liquid crystal display device, the pixel electrode and the common electrode must be formed using a light-transmitting conductive film. conventionally,
A pixel electrode and a common electrode have been formed by forming a light-transmitting conductive film and then forming it by etching or the like. For this reason, the number of manufacturing processes and the number of masks increased, and the manufacturing cost was high.

Accordingly, an object of the present invention is to provide a semiconductor device, a liquid crystal display device, and an electronic device that have a wide viewing angle, a small number of manufacturing steps and a small number of masks, and low manufacturing costs.

In the present invention, one of the pixel electrode and the common electrode is used as an electrode without forming a light-transmitting conductive film (hereinafter referred to as “translucent conductive film”). Thereby, it is not necessary to form the translucent conductive film by etching or the like, the number of manufacturing steps and the number of photomasks can be reduced, and the manufacturing cost can be suppressed.

Note that a liquid crystal element has a molecular arrangement of liquid crystal molecules that controls the amount of light with respect to a substrate by a horizontal electric field generated by a potential difference between a pixel electrode and a common electrode connected across a plurality of pixels in a pixel portion. What is necessary is just to be able to rotate in a substantially horizontal direction.

The present invention relates to a first electrode formed on the entire surface of one surface of a substrate, a first insulating film formed on the first electrode, and a thin film transistor formed on the first insulating film. A second insulating film formed on the thin film transistor, a second electrode formed on the second insulating film and having a plurality of openings, the first electrode, and the second electrode And a liquid crystal between the first electrode and the second electrode, and the liquid crystal is controlled by an electric field between the first electrode and the second electrode.

  In the present invention, the thin film transistor is a top-gate thin film transistor.

  In the present invention, the thin film transistor is a bottom-gate thin film transistor.

  In the present invention, the first electrode and the second electrode are light-transmitting conductive films.

In the present invention, one of the first electrode and the second electrode is a light-transmitting conductive film, and one of the first electrode and the second electrode is a reflective conductive film. .

The present invention also relates to an electronic device including a liquid crystal display device manufactured using the present invention.

Note that a variety of switches can be used as a switch described in this document (specification, claims, drawings, or the like). Examples include electrical switches and mechanical switches. That is, it is only necessary to be able to control the current flow, and is not limited to a specific one. For example, as a switch, a transistor (for example, bipolar transistor, MOS transistor, etc.), a diode (for example, PN diode, PIN diode, Schottky diode, MIM (Metal Insulator Metal) diode, MI
S (Metal Insulator Semiconductor) diodes, diode-connected transistors, etc.), thyristors, or the like can be used. Alternatively, a logic circuit combining these can be used as a switch.

In the case where a transistor is used as a switch, the transistor operates as a mere switch, and thus the polarity (conductivity type) of the transistor is not particularly limited. However, when it is desired to suppress off-state current, it is desirable to use a transistor having a polarity with smaller off-state current. As a transistor with low off-state current, a transistor having an LDD region, a transistor having a multi-gate structure, and the like can be given. Alternatively, an N-channel transistor is preferably used in the case where the transistor operates as a switch when the potential of the source terminal of the transistor is close to a low potential power source (Vss, GND, 0 V, or the like). On the other hand, it is desirable to use a P-channel transistor when operating in a state where the potential of the source terminal is close to a high potential side power supply (Vdd or the like). This is because when the N-channel transistor operates with the source terminal close to the low-potential side power supply, and the P-channel transistor operates with the source terminal close to the high-potential side power supply, the absolute value of the gate-source voltage is This is because it can be made large, so that it is easy to operate as a switch. Moreover, since the source follower operation is rarely performed, the output voltage is rarely reduced.

Note that CMO using both N-channel and P-channel transistors
An S-type switch may be used as the switch. When a CMOS switch is used, a current flows when one of the P-channel transistor and the N-channel transistor is turned on, so that the switch can easily function as a switch. For example, the voltage can be appropriately output regardless of whether the voltage of the input signal to the switch is high or low. Furthermore, since the voltage amplitude value of the signal for turning on / off the switch can be reduced, the power consumption can be reduced.

Note that when a transistor is used as the switch, the switch includes an input terminal (one of a source terminal or a drain terminal), an output terminal (the other of the source terminal or the drain terminal),
And a terminal for controlling conduction (gate terminal). On the other hand, when a diode is used as the switch, the switch may not have a terminal for controlling conduction. Therefore, the use of a diode as a switch rather than a transistor can reduce the wiring for controlling the terminal.

In addition, in this document (specifications, claims, drawings, etc.), when it is explicitly stated that A and B are connected, A and B are electrically connected And A and B
And A and B are directly connected to each other. Here, A and B are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.). Therefore, in the configuration disclosed in this document (specifications, claims, drawings, etc.), it is not limited to a predetermined connection relationship, for example, the connection relationship shown in the figure or text, but is shown in the figure or text. Including those other than connection relations.

For example, when A and B are electrically connected, an element (for example, a switch, a transistor, a capacitor, an inductor, a resistance element, a diode, or the like) that enables electrical connection between A and B is provided. 1 or more may be arranged between A and B. Alternatively, when A and B are functionally connected, a circuit (for example, a logic circuit (an inverter, a NAND circuit, a NOR circuit, etc.), a signal conversion circuit that enables functional connection between A and B (DA conversion circuit, AD conversion circuit, gamma correction circuit, etc.), potential level conversion circuit (power supply circuit (boost circuit, step-down circuit, etc.), level shifter circuit that changes signal potential level), voltage source, current source, switching circuit , Amplifier circuits (circuits that can increase signal amplitude or current amount, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generation circuits, memory circuits,
One or more control circuits and the like may be arranged between A and B. Alternatively, when A and B are directly connected, A and B may be directly connected without sandwiching other elements or other circuits between A and B.

Note that in the case where it is explicitly described that A and B are directly connected, when A and B are directly connected (that is, another element or other circuit between A and B). ) And A and B are electrically connected (that is, A and B are connected with another element or another circuit sandwiched between them). ).

Note that in the case where it is explicitly described that A and B are electrically connected, another element is connected between A and B (that is, between A and B). Or when A and B are functionally connected (that is, they are functionally connected with another circuit between A and B). And A and B are directly connected (
That is, it is assumed that A and B are connected without interposing another element or another circuit). That is, when it is explicitly described that it is electrically connected, it is the same as when it is explicitly only described that it is connected.

Note that a display element, a display device that is a device including a display element, a light-emitting element, and a light-emitting device that is a device including a light-emitting element can have various modes or have various elements. For example, as a display element, a display device, a light-emitting element, or a light-emitting device, an EL element (an organic EL element,
Inorganic EL element or EL element containing organic and inorganic substances), electron-emitting element, liquid crystal element, electronic ink, electrophoretic element, grating light valve (GLV), plasma display (
PDP), digital micromirror device (DMD), piezoelectric ceramic display,
A display medium in which contrast, luminance, reflectance, transmittance, and the like are changed by an electromagnetic action, such as a carbon nanotube, can be used. An EL display is used as a display device using an EL element, and a field emission display (FED) or a SED flat display (SED: Surface-) is used as a display device using an electron-emitting device.
Liquid crystal displays (transmission type liquid crystal display, transflective type liquid crystal display, reflective type liquid crystal display, direct view type liquid crystal display, projection type liquid crystal display), electronic ink, etc. There is electronic paper as a display device using an electrophoretic element.

Note that various types of transistors can be used as the transistor described in this document (the specification, the claims, the drawings, or the like). Thus, there is no limitation on the type of transistor used. For example, a thin film transistor (TFT) including a non-single-crystal semiconductor film typified by amorphous silicon, polycrystalline silicon, microcrystalline (also referred to as semi-amorphous) silicon, or the like can be used. When using TFT, there are various advantages. For example, since manufacturing can be performed at a lower temperature than that of single crystal silicon, manufacturing cost can be reduced or a manufacturing apparatus can be increased in size. Since the manufacturing apparatus can be enlarged, it can be manufactured on a large substrate. Therefore, since a large number of display devices can be manufactured at the same time, it can be manufactured at low cost. Furthermore, since the manufacturing temperature is low, a substrate with low heat resistance can be used. Therefore, a transistor can be manufactured on a transparent substrate. Then, light transmission through the display element can be controlled using a transistor over a transparent substrate. Alternatively, since the thickness of the transistor is small, part of the film included in the transistor can transmit light.
Therefore, the aperture ratio can be improved.

By using a catalyst (such as nickel) when producing polycrystalline silicon,
It becomes possible to further improve the crystallinity and manufacture a transistor with good electrical characteristics. As a result, a gate driver circuit (scanning line driving circuit), a source driver circuit (signal line driving circuit), and a signal processing circuit (signal generation circuit, gamma correction circuit, DA conversion circuit, etc.) can be integrally formed on the substrate. .

By using a catalyst (such as nickel) when producing microcrystalline silicon,
It becomes possible to further improve the crystallinity and manufacture a transistor with good electrical characteristics. At this time, crystallinity can be improved only by applying heat treatment without using a laser.
As a result, a part of the gate driver circuit (scanning line driver circuit) and the source driver circuit (analog switch or the like) can be integrally formed on the substrate. Further, when a laser is not used for crystallization, unevenness in crystallinity of silicon can be suppressed. Therefore, a beautiful image can be displayed.

However, it is possible to produce polycrystalline silicon or microcrystalline silicon without using a catalyst (such as nickel).

Alternatively, a transistor can be formed using a semiconductor substrate, an SOI substrate, or the like.
In that case, a MOS transistor, a junction transistor, a bipolar transistor, or the like can be used as the transistor described in this specification. Accordingly, a transistor with small variations in characteristics, size, shape, and the like, high current supply capability, and small size can be manufactured. When these transistors are used, low power consumption of the circuit or high integration of the circuit can be achieved.

Or ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO, SnO
A transistor having a compound semiconductor or an oxide semiconductor such as a thin film transistor in which these compound semiconductor or oxide semiconductor is thinned can be used.
Accordingly, the manufacturing temperature can be lowered, and for example, the transistor can be manufactured at room temperature. As a result, the transistor can be formed directly on a substrate having low heat resistance, such as a plastic substrate or a film substrate. Note that these compound semiconductors or oxide semiconductors can be used not only for a channel portion of a transistor but also for other purposes. For example, these compound semiconductors or oxide semiconductors can be used as resistance elements, pixel electrodes, and transparent electrodes. Furthermore, since these can be formed or formed simultaneously with the transistor, cost can be reduced.

Alternatively, a transistor formed using an inkjet method or a printing method can be used. By these, it can manufacture at room temperature, manufacture at a low vacuum degree, or can manufacture on a large sized board | substrate. Further, since the transistor can be manufactured without using a mask (reticle), the layout of the transistor can be easily changed. Furthermore, since it is not necessary to use a resist, the material cost is reduced and the number of processes can be reduced. Further, since a film is formed only on a necessary portion, the material is not wasted and cost can be reduced as compared with a manufacturing method in which etching is performed after film formation on the entire surface.

Alternatively, a transistor including an organic semiconductor or a carbon nanotube can be used. Thus, a transistor can be formed over a substrate that can be bent. Therefore, it can be strong against impact.

  In addition, various transistors can be used.

Note that various types of substrates on which transistors are formed can be used,
It is not limited to a specific thing. As a substrate on which a transistor is formed, for example,
Single crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, hemp), synthetic fiber (nylon,
Polyurethane, polyester) or recycled fiber (including acetate, cupra, rayon, recycled polyester), leather substrate, rubber substrate, stainless steel substrate, stainless steel foil substrate, and the like can be used. Alternatively, a transistor may be formed over a certain substrate, and then the transistor may be transferred to another substrate, and the transistor may be disposed over another substrate. The substrate to which the transistor is transferred is a single crystal substrate, SOI substrate, glass substrate, quartz substrate, plastic substrate, paper substrate, cellophane substrate, stone substrate, wood substrate, cloth substrate (natural fiber (silk, cotton, hemp) , Synthetic fibers (including nylon, polyurethane, polyester) or recycled fibers (including acetate, cupra, rayon, recycled polyester), leather substrates, rubber substrates, stainless steel substrates, substrates with stainless steel foil, etc. be able to. Or the skin of human animals (skin surface, dermis)
Alternatively, subcutaneous tissue may be used as the substrate. By using these substrates, it is possible to form a transistor with good characteristics, a transistor with low power consumption, manufacture a device that is not easily broken, impart heat resistance, or reduce weight.

Note that the structure of the transistor can take a variety of forms. It is not limited to a specific configuration. For example, a multi-gate structure having two or more gate electrodes may be used. When the multi-gate structure is employed, the channel regions are connected in series, so that a plurality of transistors are connected in series. With the multi-gate structure, the off-state current can be reduced and the reliability can be improved by improving the withstand voltage of the transistor. Or, when operating in the saturation region, the drain-source current does not change much even when the drain-source voltage changes, and the slope of the voltage / current characteristic is flat due to the multi-gate structure. it can. By using the characteristic that the slope of the voltage / current characteristic is flat, an ideal current source circuit and an active load having a very high resistance value can be realized. As a result, a differential circuit or a current mirror circuit with good characteristics can be realized. Alternatively, a structure in which gate electrodes are arranged above and below the channel may be employed. With the structure in which the gate electrodes are arranged above and below the channel, the channel region increases, so that the current value can be increased or the S value can be reduced because a depletion layer can be easily formed. When gate electrodes are provided above and below a channel, a structure in which a plurality of transistors are connected in parallel is obtained.

Alternatively, a structure in which a gate electrode is disposed over a channel region may be employed, or a structure in which a gate electrode is disposed under a channel region may be employed. Alternatively, a normal stagger structure or an inverted stagger structure may be used, the channel region may be divided into a plurality of regions, the channel regions may be connected in parallel, or the channel regions may be connected in series. Good. In addition, a source electrode or a drain electrode may overlap with the channel region (or a part thereof). With the structure in which the source electrode or the drain electrode overlaps with the channel region (or part thereof), it is possible to prevent electric charges from being accumulated in part of the channel region and unstable operation. Further, an LDD region may be provided. By providing the LDD region, the off-state current can be reduced or the reliability can be improved by improving the withstand voltage of the transistor. Or
By providing the LDD region, when operating in the saturation region, even if the drain-source voltage changes, the drain-source current does not change so much, and the slope of the voltage / current characteristic becomes flat. it can.

Note that various types of transistors can be used for the transistor in this document (the specification, the claims, the drawings, and the like) and can be formed over various substrates. Therefore, all of the circuits necessary for realizing a predetermined function may be formed on the same substrate.
For example, all circuits necessary for realizing a predetermined function may be formed over a glass substrate, a plastic substrate, a single crystal substrate, or an SOI substrate, or may be formed over various substrates. . Since all the circuits necessary for realizing a predetermined function are formed on the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. be able to. Alternatively, a part of the circuit necessary for realizing the predetermined function is formed on a certain substrate, and another part of the circuit necessary for realizing the predetermined function is formed on another substrate. It may be. That is, not all of the circuits necessary for realizing a predetermined function may be formed on the same substrate. For example, a part of a circuit necessary for realizing a predetermined function is formed using a transistor over a glass substrate, and another part of a circuit required for realizing a predetermined function is a single crystal substrate. An IC chip formed on a single crystal substrate and formed of a transistor is formed by COG (Chip On Gl
Ass) may be connected to the glass substrate, and the IC chip may be disposed on the glass substrate. Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Automated Bonding) or a printed board. As described above, since a part of the circuit is formed on the same substrate, the cost can be reduced by reducing the number of components, or the reliability can be improved by reducing the number of connection points with circuit components. In addition, since the power consumption of a circuit having a high driving voltage or a high driving frequency is large, such a circuit is not formed on the same substrate. Instead, for example, on a single crystal substrate. If the circuit of that portion is formed and an IC chip constituted by the circuit is used, an increase in power consumption can be prevented.

Note that in this document (specification, claims, drawings, etc.), one pixel represents the minimum unit of an image. Therefore, in the case of a full-color display device composed of R (red), G (green), and B (blue) color elements, one pixel is a dot of the R color element, a dot of the G color element, and a B color element. It shall be composed of dots. Note that the color elements are not limited to three colors, and three or more colors may be used, or colors other than RGB may be used. For example, add white and RGBW
(W is white). Further, one or more colors such as yellow, cyan, magenta, emerald green, vermilion, and the like may be added to RGB. Alternatively, for example, a color similar to at least one of RGB may be added to RGB. For example, R, G, B1, and B2 may be used. B1 and B2 are both blue, but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, it is possible to perform display closer to the real thing. Alternatively, power consumption can be reduced by using such color elements. A single pixel may have a plurality of dots of the same color element. At that time, the plurality of color elements may have different sizes of regions contributing to display. In addition, by controlling each of a plurality of dots of the same color element,
A gradation may be expressed. This is called an area gradation method. Alternatively, by using a plurality of dots of the same color element, the signal supplied to each dot is slightly different,
The viewing angle may be widened. That is, a plurality of pixel electrodes having the same color element may have different potentials. As a result, the voltage applied to the liquid crystal molecules is different for each pixel electrode. Therefore, the viewing angle can be widened.

Note that in this document (specification, claims, drawings, etc.), one pixel means one element whose brightness can be controlled. Therefore, as an example, one pixel represents one color element, and brightness is expressed by one color element. Therefore, at that time, R
In the case of a color display device composed of (red), G (green), and B (blue) color elements, the minimum unit of an image is composed of three pixels: an R pixel, a G pixel, and a B pixel. And Note that the color elements are not limited to three colors, and three or more colors may be used, or colors other than RGB may be used. For example, RGBW (W is white) may be added by adding white. Further, one or more colors such as yellow, cyan, magenta, emerald green, vermilion, and the like may be added to RGB. Further, for example, a color similar to at least one of RGB may be added to RGB. For example, R, G, B1, and B2 may be used. B1 and B2 are both blue, but have slightly different frequencies. Similarly, R1, R2, G, and B may be used. By using such color elements, it is possible to perform display closer to the real thing. Alternatively, power consumption can be reduced by using such color elements. As another example, when brightness is controlled using a plurality of areas for one color element, one area may be used as one pixel. Therefore, as an example, when area gradation is performed or when sub-pixels (sub-pixels) are provided, there are a plurality of brightness control areas for one color element, and the gradation is expressed as a whole. However, one pixel for controlling the brightness may be one pixel. Therefore, in that case, one color element is composed of a plurality of pixels. Alternatively, even if there are a plurality of areas for controlling the brightness in one color element, they may be combined into one pixel. Therefore, in that case, one color element is composed of one pixel. When brightness is controlled using a plurality of areas for one color element, the size of the area contributing to display may be different depending on the pixel. In addition, in a plurality of brightness control areas for one color element, a signal supplied to each may be slightly different to widen the viewing angle. That is, for one color element, the potentials of the pixel electrodes in each of a plurality of regions may be different from each other. As a result, the voltage applied to the liquid crystal molecules is different for each pixel electrode. Therefore, the viewing angle can be widened.

In addition, when it is explicitly described as one pixel (for three colors), it is assumed that three pixels of R, G, and B are considered as one pixel. When it is explicitly described as one pixel (for one color), it is assumed that when there are a plurality of areas for one color element, they are considered as one pixel.

Note that in this document (the specification, the claims, the drawings, or the like), the pixels may be arranged (arranged) in a matrix. Here, the pixel being arranged (arranged) in the matrix includes a case where the pixels are arranged in a straight line or a jagged line in the vertical direction or the horizontal direction. Therefore, for example, when full color display is performed with three color elements (for example, RGB), the case where stripes are arranged and the case where dots of three color elements are arranged in delta are included. Furthermore, the case where a Bayer is arranged is included. Note that the color elements are not limited to three colors, and may be more than that, for example, RGBW (W is white) or RGB in which one or more colors of yellow, cyan, magenta, etc. are added. Further, the size of the display area may be different for each dot of the color element. This
Low power consumption or long life of the display element can be achieved.

Note that in this document (the specification, the claims, the drawings, or the like), an active matrix method in which an active element is included in a pixel or a passive matrix method in which an active element is not included in a pixel can be used.

In the active matrix system, not only transistors but also various active elements (active elements and nonlinear elements) can be used as active elements (active elements and nonlinear elements). For example, MIM (Metal Insulator Metal) or TFD
It is also possible to use (Thin Film Diode) or the like. These elements are
Since there are few manufacturing steps, manufacturing cost can be reduced or yield can be improved. Furthermore, since the size of the element is small, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that as a method other than the active matrix method, a passive matrix type that does not use active elements (active elements, nonlinear elements) can be used. Since no active element (active element or nonlinear element) is used, the number of manufacturing steps is small, and manufacturing cost can be reduced or yield can be improved. In addition, since an active element (an active element or a non-linear element) is not used, the aperture ratio can be improved, and low power consumption and high luminance can be achieved.

Note that a transistor is an element having at least three terminals including a gate, a drain, and a source. The transistor has a channel region between the drain region and the source region, and the drain region, the channel region, and the source region. A current can be passed through. Here, since the source and the drain vary depending on the structure and operating conditions of the transistor, it is difficult to limit which is the source or the drain. Therefore, in this document (the specification, the claims, the drawings, and the like), a region functioning as a source and a drain may not be referred to as a source or a drain. In that case, as an example, each of the first
Sometimes referred to as a terminal or a second terminal. Alternatively, they may be referred to as a first electrode and a second electrode, respectively. Alternatively, they may be referred to as a source region and a drain region.

Note that the transistor may be an element having at least three terminals including a base, an emitter, and a collector. Similarly in this case, the emitter and the collector may be referred to as a first terminal and a second terminal.

Note that a gate refers to the whole or part of a gate electrode and a gate wiring (also referred to as a gate line, a gate signal line, a scan line, a scan signal line, or the like). A gate electrode refers to a portion of a conductive film that overlaps with a semiconductor forming a channel region with a gate insulating film interposed therebetween. Note that a part of the gate electrode is an LDD (Lightly Dow).
ped drain) region or source / drain region may overlap with the gate insulating film. A gate wiring is a wiring for connecting the gate electrodes of each transistor, a wiring for connecting the gate electrodes of each pixel, or a wiring for connecting the gate electrode to another wiring. Say.

However, the portion that functions as the gate electrode and also functions as the gate wiring (region,
There are also conductive films, wirings, and the like. Such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring. That is, there is a region where the gate electrode and the gate wiring cannot be clearly distinguished. For example, when a part of the gate wiring extended and the channel region overlap, the portion (region, conductive film, wiring, etc.) functions as the gate wiring, but also as the gate electrode It is functioning. Therefore, such a portion (region, conductive film, wiring, or the like) may be called a gate electrode or a gate wiring.

Note that a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate electrode and connected to form the same island (island) as the gate electrode may be called a gate electrode. Similarly, a portion (a region, a conductive film, a wiring, or the like) formed using the same material as the gate wiring and connected by forming the same island (island) as the gate wiring may be referred to as a gate wiring. In a strict sense, such a portion (region, conductive film, wiring, or the like) may not overlap with the channel region or may not have a function of being connected to another gate electrode. However, due to manufacturing margins, etc., parts (regions, conductive films, wirings, etc.) that are formed of the same material as the gate electrode or gate wiring and that form the same island (island) as the gate electrode or gate wiring are connected. is there. Therefore, such a portion (region, conductive film, wiring, or the like) may also be referred to as a gate electrode or a gate wiring.

Note that, for example, in a multi-gate transistor, one gate electrode and another gate electrode are often connected to each other with a conductive film formed using the same material as the gate electrode. Such a portion (region, conductive film, wiring, or the like) is a portion (region, conductive film, wiring, or the like) for connecting the gate electrode to the gate electrode, and may be called a gate wiring. These transistors can be regarded as a single transistor, and may be referred to as a gate electrode. That is, a portion (region, conductive film, wiring, or the like) that is formed using the same material as the gate electrode or gate wiring and is connected to form the same island (island) as the gate electrode or gate wiring is connected to the gate electrode or gate wiring. You can call it. Further, for example, a conductive film in a portion where the gate electrode and the gate wiring are connected and formed of a material different from the gate electrode or the gate wiring may be referred to as a gate electrode. You may call it.

Note that a gate terminal means a part of a part of a gate electrode (a region, a conductive film, a wiring, or the like) or a part electrically connected to the gate electrode (a region, a conductive film, a wiring, or the like). .

Note that in the case of calling a gate wiring, a gate line, a gate signal line, a scanning line, a scanning signal line, or the like, the gate of the transistor may not be connected to the wiring. In this case, the gate wiring, the gate line, the gate signal line, the scanning line, and the scanning signal line are simultaneously formed with the wiring formed in the same layer as the gate of the transistor, the wiring formed of the same material as the gate of the transistor, or the gate of the transistor. It may mean a deposited wiring. Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

Note that a source refers to a source region, a source electrode, and a source wiring (a source line, a source signal line,
Data line, data signal line, etc.) or a part of them. The source region refers to a semiconductor region containing a large amount of P-type impurities (such as boron and gallium) and N-type impurities (such as phosphorus and arsenic). Therefore, a region containing a little P-type impurity or N-type impurity, that is, a so-called LDD (Lightly Doped Drain) region is not included in the source region. The source electrode is formed of a material different from that of the source region,
This refers to a portion of the conductive layer that is electrically connected to the source region. However, the source electrode may be referred to as a source electrode including the source region. The source wiring is a wiring for connecting the source electrodes of the transistors, a wiring for connecting the source electrodes of each pixel, or a wiring for connecting the source electrode to another wiring. Say.

However, the part that functions as a source electrode and also functions as a source wiring (
Regions, conductive films, wirings, etc.). Such a part (region, conductive film, wiring, etc.)
It may be called a source electrode or a source wiring. That is, there is a region where the source electrode and the source wiring cannot be clearly distinguished. For example, in the case where a part of a source wiring that is extended and the source region overlap with each other, the portion (region, conductive film, wiring, etc.) functions as a source wiring, but as a source electrode Will also work. Thus, such a portion (region, conductive film, wiring, or the like) may be called a source electrode or a source wiring.

Note that a portion (region, conductive film, wiring, or the like) that is formed using the same material as the source electrode and forms the same island (island) as the source electrode, or a portion (region) that connects the source electrode and the source electrode , Conductive film, wiring, etc.) may also be referred to as source electrodes. Further, a portion overlapping with the source region may be called a source electrode. Similarly, a region formed of the same material as the source wiring and connected by forming the same island as the source wiring may be called a source wiring. Such a portion (region, conductive film, wiring, or the like) may not have a function of connecting to another source electrode in a strict sense. However, there is a portion (a region, a conductive film, a wiring, or the like) that is formed using the same material as the source electrode or the source wiring and connected to the source electrode or the source wiring because of a manufacturing margin or the like. Therefore, such a portion (region, conductive film, wiring, or the like) may also be referred to as a source electrode or a source wiring.

Note that, for example, a conductive film in a portion where the source electrode and the source wiring are connected and formed using a material different from that of the source electrode or the source wiring may be referred to as a source electrode or a source wiring. You may call it.

Note that a source terminal refers to a part of a source region, a source electrode, or a portion (region, conductive film, wiring, or the like) electrically connected to the source electrode.

Note that in the case of calling a source wiring, a source line, a source signal line, a data line, a data signal line, or the like, the source (drain) of the transistor may not be connected to the wiring. in this case,
The source wiring, the source line, the source signal line, the data line, and the data signal line are a wiring formed in the same layer as the source (drain) of the transistor, a wiring formed of the same material as the source (drain) of the transistor, or the transistor It may mean a wiring formed simultaneously with the source (drain). Examples include a storage capacitor wiring, a power supply line, a reference potential supply wiring, and the like.

  The drain is the same as the source.

Note that a semiconductor device refers to a device having a circuit including a semiconductor element (a transistor, a diode, a thyristor, or the like). Furthermore, a device that can function by utilizing semiconductor characteristics may be called a semiconductor device.

Note that a display element is an optical modulation element, a liquid crystal element, a light emitting element, an EL element (an organic EL element,
An inorganic EL element or an EL element including an organic substance and an inorganic substance), an electron emission element, an electrophoretic element, a discharge element, a light reflection element, a light diffraction element, a digital micromirror device (DMD), and the like. However, it is not limited to this.

Note that a display device refers to a device having a display element. Note that the display device may be a display panel body in which a plurality of pixels including display elements or a peripheral drive circuit for driving the pixels is formed over the same substrate. The display device is a peripheral drive circuit disposed on the substrate by wire bonding or bumps, so-called chip-on-glass (COG).
IC chips connected by TAB or IC chips connected by TAB or the like may be included. Note that the display device may include a flexible printed circuit (FPC) to which an IC chip, a resistor element, a capacitor element, an inductor, a transistor, and the like are attached. In addition,
The display device may be connected via a flexible printed circuit (FPC) or the like, and may include a printed wiring board (PWB) to which an IC chip, a resistor element, a capacitor element, an inductor, a transistor, and the like are attached. Note that the display device may include an optical sheet such as a polarizing plate or a retardation plate. The display device includes a lighting device, a housing, a voice input / output device,
An optical sensor or the like may be included. Here, an illumination device such as a backlight unit is
A light guide plate, prism sheet, diffusion sheet, reflection sheet, light source (LED, cold cathode tube, etc.), cooling device (water cooling type, air cooling type) and the like may be included.

Note that the lighting device refers to a device including a backlight unit, a light guide plate, a prism sheet, a diffusion sheet, a reflective sheet, a light source (such as an LED, a cold cathode tube, a hot cathode tube), a cooling device, and the like.

  Note that a light-emitting device refers to a device having a light-emitting element or the like.

In addition, a reflection apparatus means the apparatus which has a light reflection element, a light diffraction element, a light reflection electrode, etc.

Note that a liquid crystal display device refers to a display device having a liquid crystal element. Liquid crystal display devices include
There are direct view type, projection type, transmission type, reflection type, and transflective type.

Note that a driving device refers to a device having a semiconductor element, an electric circuit, and an electronic circuit. For example, a transistor that controls input of a signal from a source signal line into a pixel (sometimes referred to as a selection transistor or a switching transistor), a transistor that supplies voltage or current to a pixel electrode, or a voltage or current to a light-emitting element A transistor that supplies the voltage is an example of a driving device. Further, a circuit for supplying a signal to the gate signal line (sometimes referred to as a gate driver or a gate line driver circuit) and a circuit for supplying a signal to the source signal line (sometimes referred to as a source driver or source line driver circuit). ) Is an example of a driving device.

Note that a display device, a semiconductor device, a lighting device, a cooling device, a light-emitting device, a reflecting device, a driving device, and the like may overlap with each other. For example, the display device may include a semiconductor device and a light-emitting device. Alternatively, the semiconductor device may include a display device and a driving device.

In addition, in this document (specifications, claims or drawings, etc.), if it is explicitly stated that B is formed on A or B is formed on A, It is not limited that B is formed in direct contact with A. If you are not in direct contact, that is,
A case where another object is interposed between A and B is also included. Here, A and B are objects (
For example, a device, an element, a circuit, a wiring, an electrode, a terminal, a conductive film, a layer, or the like).

Therefore, for example, when it is explicitly described that the layer B is formed on the layer A (or on the layer A), the layer B is formed in direct contact with the layer A. In some cases, another layer (for example, layer C or layer D) is formed in direct contact with layer A, and layer B is in direct contact with the other layer.
The case where is formed is included. In addition, another layer (for example, layer C, layer D, etc.)
A single layer may be sufficient and a multilayer may be sufficient.

Furthermore, the same applies to the case where B is explicitly described as being formed above A, and is not limited to the direct contact of B on A. This includes the case where another object is interposed in. Therefore, for example, the layer B is formed above the layer A.
In this case, the layer B is formed in direct contact with the layer A, and another layer (for example, the layer C or the layer D) is formed in direct contact with the layer A. And the case where the layer B is formed in direct contact with. Note that another layer (for example, the layer C or the layer D) may be a single layer or a multilayer.

In addition, when it is explicitly described that B is formed in direct contact with A, it includes a case in which B is formed in direct contact with A. It shall not be included when an object is present.

The same applies to the case where B is below A or B is below A.

According to the present invention, it is possible to provide a liquid crystal display device having a wide viewing angle and having a lower manufacturing cost than the conventional one.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. As a result, a highly reliable semiconductor device can be obtained.

In the present invention, when a semiconductor device having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable semiconductor device can be obtained.

FIG. 10 is a cross-sectional view illustrating a structural example of a pixel portion using a top-gate thin film transistor. FIG. 10 is a cross-sectional view illustrating a configuration example of a pixel portion using a bottom gate thin film transistor. FIG. 10 is a cross-sectional view illustrating a structural example of a pixel portion using a top-gate thin film transistor. FIG. 4 is a plan view of a pixel portion shown in FIGS. 1 to 3. Sectional drawing of the liquid crystal display device of this invention. Sectional drawing of the liquid crystal display device of this invention. 1 is a top view of a liquid crystal display device of the present invention. 1 is a top view of a liquid crystal display device of the present invention. 1 is a top view of a liquid crystal display device of the present invention. Sectional drawing of the liquid crystal display device of this invention. 1 is a top view of a liquid crystal display device of the present invention. Sectional drawing of the liquid crystal display device of this invention. 1 is a top view of a liquid crystal display device of the present invention. 2A and 2B are a top view and a cross-sectional view of a liquid crystal display device of the present invention. Sectional drawing which shows the manufacturing process of the liquid crystal display device of this invention. Sectional drawing which shows the manufacturing process of the liquid crystal display device of this invention. Sectional drawing which shows the manufacturing process of the liquid crystal display device of this invention. Sectional drawing which shows the manufacturing process of the liquid crystal display device of this invention. 1 is a circuit diagram of a liquid crystal display device of the present invention. 1 is a circuit diagram of a liquid crystal display device of the present invention. FIG. 14 illustrates an example of an electronic device manufactured using the liquid crystal display device of the present invention. Sectional drawing of the liquid crystal display device of this invention. 1 is a top view of a liquid crystal display device of the present invention. Sectional drawing of the liquid crystal display device of this invention. Sectional drawing of the liquid crystal display device of this invention. Sectional drawing of the liquid crystal display device of this invention. 1 is a top view of a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention. FIG. 6 illustrates a liquid crystal display device of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in the drawings described below, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

[Embodiment 1]
This embodiment will be described with reference to FIGS. 1, 3, 4, and 5. FIG.

FIG. 1 shows a top gate thin film transistor (Thi) as a switching element of a pixel portion.
In this example, n Film Transistor (TFT) is used. A conductive film 115 serving as a first electrode in FFS (Fringe-field switching) driving is formed on the entire surface of one surface of the substrate 101.

As the conductive film 115, a light-transmitting conductive film (hereinafter referred to as “translucent conductive film”) is used. As such a light-transmitting conductive film, indium tin oxide (Indium Tin Oxi) is used.
de (ITO) film, Indium Zinc Oxide (I
ZO)) film, an indium tin oxide (ITSO) film to which silicon oxide is added, a zinc oxide (ZnO) film, a tin cadmium oxide (CTO) film, a tin oxide (SnO) film, or the like may be used.

A base film 102 is formed over the conductive film 115, and a thin film transistor (Thin) is formed over the base film 102.
A film transistor (TFT) 121 is formed. TFT121
Includes a region 131a which is one of a source region and a drain region, a region 131b which is the other of the source region and the drain region, an active layer 103 including a channel formation region 132, a gate insulating film 104, and a gate electrode 105. In FIG. 1, the gate insulating film 104 is formed only on the channel formation region 132, but may be formed on portions other than the channel formation region 132.

An interlayer insulating film 106 is formed on the TFT 121 and the base film 102. On the interlayer insulating film 106, an electrode 107 electrically connected to one of the source region and the drain region and the other of the source region and the drain region are electrically connected through a contact hole in the interlayer insulating film 106. An electrode 108 is formed.

An interlayer insulating film 111 is formed on the interlayer insulating film 106 and the electrodes 107 to 109, and the electrode 108 is electrically connected to the electrode 108 through a contact hole formed in the interlayer insulating film 111 on the interlayer insulating film 111. Pixel electrodes 113 and 114a to 114c connected to are formed. Note that the pixel electrode 113 may be electrically connected to the electrode 107 instead of the electrode 108. Further, only one of the interlayer insulating films 106 and 111 may be formed.

As shown in FIG. 1, an electric field 125 is generated between the pixel electrode 114 (114 a to 114 c) and the pixel electrode 113. As will be described later, the liquid crystal molecules are driven by the electric field 125.

As shown in FIG. 3, the conductive film 115 is electrically connected to the connection electrode 109 through contact holes in the interlayer insulating film 106 and the base film 102, and the connection electrode 109 is electrically connected to the wiring 119. It is connected to the. Note that the wiring 119 is manufactured using the same material and the same process as the gate electrode 105, and the connection electrode 109 is manufactured using the same material and the same process as the electrode 107 and the electrode 108. In this manner, the number of photomasks can be reduced because the formation can be performed without adding a manufacturing process. 3 and FIG. 1 are denoted by the same reference numerals.

Note that the wiring 119 may be arranged in parallel to the gate wiring 105. When the wiring 119 is arranged in parallel to the gate wiring 105, the decrease in the aperture ratio is reduced.

In addition, when the wiring 119 is connected to the conductive film 115 for each pixel, the resistance of the conductive film 115 can be reduced. Further, in this case, waveform rounding can be reduced.

Further, the connection electrode 109 may be extended and arranged over the pixels without connecting the connection electrode 109 to the wiring 119. In that case, the connection electrode 109 is preferably arranged in parallel with the source line 107.

FIG. 4 shows a top view of FIGS. 1 and 3. 4 is a cross-sectional view taken along line AA ′ and BB ′ in FIG. 4, and FIG. 1 is a cross-sectional view taken along line AA ′ in FIG. 4. Pixel electrodes 113 and 114a, 114b, 1
A groove (also referred to as “opening”, “slit”, “gap”, “gap”, “space”) 117 is formed in 14c and the like.

As shown in FIG. 4, a plurality of source wirings 107 are arranged in parallel with each other (extending in the vertical direction in the drawing) and separated from each other. The plurality of gate wirings 105 extend in a direction substantially orthogonal to the source wiring 107 (the left-right direction in the drawing) and are arranged so as to be separated from each other.
The wiring 119 is disposed at a position adjacent to each of the plurality of gate wirings 105, and is parallel to the gate wiring 105, that is, a direction orthogonal to the source wiring 107 (left and right direction in the drawing).
Is stretched. By arranging in this way, the aperture ratio can be improved. A substantially rectangular space is surrounded by the source wiring 107, the wiring 119, and the gate wiring 105, and the pixel electrode 113 of the liquid crystal display device is disposed in this space. Pixel electrode 11
The thin film transistor 121 for driving 3 is arranged at the upper left corner in the figure. A plurality of pixel electrodes and thin film transistors are arranged in a matrix.

Note that in this embodiment, the wiring 119 and the conductive film 115 are connected to each pixel through a contact hole; however, the present invention is not limited to this.

Note that the gate wiring 105, the wiring 119, and the source wiring 107 are formed using aluminum (Al
), Tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag) ), Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co
), Zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As), gallium (Ga), indium (In), tin (Sn), oxygen (O Or one or more elements selected from the group consisting of, or a compound or alloy material (for example, indium tin oxide (Indium) containing one or more elements selected from the group as a component)
Tin Oxide (ITO)), Indium Zinc Oxide (Indium Zinc)
Oxide (IZO)), indium tin oxide containing silicon oxide (ITSO), zinc oxide (
ZnO), tin oxide (SnO), tin cadmium oxide (CTO), aluminum neodymium (Al-
Nd), magnesium silver (Mg—Ag), molybdenum niobium (Mo—Nb), and the like. Alternatively, the wiring, the electrode, the conductive layer, the conductive film, the terminal, and the like are preferably formed using a substance in which these compounds are combined. Or one or more elements selected from the group and a silicon compound (silicide) (for example, aluminum silicon, molybdenum silicon, nickel silicide, etc.), one or more elements selected from the group and nitrogen It is desirable to form with a compound (eg, titanium nitride, tantalum nitride, molybdenum nitride, or the like).

Note that silicon (Si) may contain an n-type impurity (such as phosphorus) or a p-type impurity (such as boron). When silicon contains impurities, the conductivity can be improved or the same behavior as a normal conductor can be achieved. Therefore, it becomes easy to use as wiring, electrodes, and the like.

Note that silicon having various crystallinity such as single crystal, polycrystal (polysilicon), and microcrystal (microcrystal silicon) can be used. Alternatively, silicon having no crystallinity such as amorphous (amorphous silicon) can be used. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers,
Resistance of conductive films, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon, a wiring or the like can be formed by a simple process.

Note that since aluminum or silver has high conductivity, signal delay can be reduced. Further, since etching is easy, patterning is easy and fine processing can be performed.

Note that since copper has high conductivity, signal delay can be reduced. When copper is used, it is desirable to have a laminated structure in order to improve adhesion.

Molybdenum or titanium is preferable because it has advantages such as no defects, easy etching, and high heat resistance even when in contact with an oxide semiconductor (ITO, IZO, or the like) or silicon.

  Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, when an alloy of neodymium and aluminum is used, the heat resistance is improved, and aluminum does not easily cause hillocks.

Silicon is preferable because it can be formed at the same time as a semiconductor layer included in a transistor and has high heat resistance.

In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (
SnO) and tin cadmium oxide (CTO) have a light-transmitting property, and thus can be used for a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

Note that IZO is desirable because it is easy to etch and process. It is difficult for IZO to leave a residue when it is etched. Therefore, if IZO is used as the pixel electrode, there is a problem with the liquid crystal element or light emitting element (short circuit, disorder of alignment, etc.)
Can be reduced.

Note that a wiring, an electrode, a conductive layer, a conductive film, a terminal, or the like may have a single-layer structure or a multilayer structure. With a single-layer structure, a manufacturing process of wiring, electrodes, conductive layers, conductive films, terminals, and the like can be simplified, the number of process days can be reduced, and cost can be reduced. Alternatively, by using a multilayer structure, it is possible to reduce the demerits while making use of the merits of each material, and to form wirings, electrodes, and the like with good performance. For example, by including a low resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. In addition, by using a laminated structure in which a low heat resistant material is sandwiched between high heat resistant materials, the heat resistance of a wiring, an electrode, or the like can be increased while taking advantage of the low heat resistant material. For example, a layered structure in which a layer containing aluminum is sandwiched between layers containing molybdenum, titanium, neodymium, or the like is preferable.

In addition, when wires, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one wiring, an electrode, or the like enters a material such as the other wiring, an electrode, etc., which changes the properties and cannot fulfill its original purpose. As another example, when a high resistance portion is formed or manufactured, a problem may occur and the manufacturing may not be performed normally. In such a case, it is preferable to sandwich or cover a material that reacts more easily by a laminated structure with a material that does not react easily. For example, when ITO and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum. When silicon and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum.

In addition, wiring means what the conductor is arrange | positioned. It may extend linearly or may be arranged short without extending. Therefore, the electrode is included in the wiring.

Note that the gate wiring 105 is preferably made of a material having higher heat resistance than the source wiring 107. This is because the gate wiring 105 is often arranged at a higher temperature during the manufacturing process.

Note that the source wiring 107 is preferably formed using a material having lower resistance than the gate wiring 105. This is because only the binary signal of the H signal and the L signal is given to the gate wiring 105, but an analog signal is given to the source wiring 107, which contributes to display. Therefore, a material with low resistance is preferably used for the source wiring 107 so that an accurate signal can be supplied.

Note that the wiring 119 is not necessarily provided; however, by providing the wiring 119, the potential of the common electrode in each pixel can be stabilized. In FIG. 4, the wiring 119 is arranged in parallel to the gate line; however, the present invention is not limited to this. It may be arranged in parallel with the source wiring 107. At that time, it is desirable that the source wiring 107 be formed of the same material.

However, it is preferable that the wiring 119 be arranged in parallel with the gate line because the aperture ratio can be increased and the layout can be efficiently performed.

The substrate 101 is a glass substrate, a quartz substrate, a substrate formed of an insulator such as alumina, a plastic substrate having heat resistance that can withstand a processing temperature in a later process, a single crystal substrate (single crystal silicon substrate), an SOI substrate, or a metal It is a board. Further, it may be polycrystalline silicon.

Note that in the case where the substrate 101 is operated as a transmissive display device, the substrate 101 preferably has light transmittance.

The conductive film 115 is formed using a light-transmitting conductive film (for example, an indium tin oxide alloy (I
ndium Tin Oxide (ITO) film, indium zinc oxide (Indium
Zinc Oxide (also called IZO)), zinc oxide (ZnO), tin oxide (SnO)
, Or a polycrystalline silicon film or an amorphous silicon film into which impurities are introduced.

An insulating film is formed as the base film 102 over the conductive film 115. The insulating film 102 is
It is a film that prevents impurities from diffusing from the substrate 101 and functions as a base film. The insulating film 102 includes, for example, silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon oxide containing nitrogen (SiO _x N _y : x> y), silicon nitride containing oxygen (SiN _x O _y : x>) y) or the like, formed from an insulating material having oxygen or nitrogen. Further, a laminated film in which a plurality of these films are laminated may be used. Note that an insulating film having the same function as the insulating film 102 may be provided between the substrate 101 and the conductive film 115.

For example, the base film 102 may be a stacked film of a silicon nitride film and a silicon oxide film. A single layer film of a silicon oxide film may be used. When a silicon oxide film is used as the base film 102, the gate insulating film 1
When the thickness is larger than 04, it is useful because capacitive coupling with the gate wiring 105 can be reduced. Therefore, the base film 102 is thicker than the gate insulating film 104, and preferably has a thickness three or more times that of the gate insulating film 104.

A semiconductor film 103 is formed over the insulating film 102. In the semiconductor film 103, a region 131a serving as one of a source region and a drain region of the thin film transistor 121 and a region 131b serving as the other of the source region and the drain region are formed. Areas 131a, 1
31b is, for example, an n-type impurity region, but may be a p-type impurity region. Examples of the impurity imparting n-type include phosphorus (P) and arsenic (As), and examples of the impurity imparting p-type include boron (B) and gallium (Ga). Regions 131a and 1
A channel formation region 132 is formed between the region 31b and the region 31b.

Further, a low concentration impurity region may be formed between the region 131a and the channel formation region 132 and between the region 131b and the channel formation region 132.

As shown in FIG. 4, the conductive film 115 is formed on almost the entire surface of the pixel. Source wiring 10
7, thin film transistors 121 are arranged in rectangular regions surrounded by the wiring 119 and the gate wiring 105, respectively. That is, the gate line 1 is used as the first wiring.
03, a source line 107 is formed as a second wiring, and a wiring 119 is formed as a third wiring. By disposing the thin film transistor 121, an effective area for display in the pixel is obtained.
It can be formed more efficiently. That is, the aperture ratio is improved. The semiconductor film 103 is, for example, a polycrystalline silicon film, but other semiconductor films (for example, an amorphous silicon film, a single crystal silicon film, an organic semiconductor film, or a carbon nanotube), a microcrystalline silicon film (microcrystalline silicon film) Or a semi-amorphous silicon film).

Here, a semi-amorphous semiconductor film typified by a semi-amorphous silicon film is a film containing a semiconductor having an intermediate structure between an amorphous semiconductor and a semiconductor (including single crystal and polycrystal) films having a crystal structure. . This semi-amorphous semiconductor film is a semiconductor film having a third state that is stable in terms of free energy, and is a crystalline film having short-range order and lattice distortion, and has a grain size of 0.5 to 20 nm. And can be dispersed in the non-single-crystal semiconductor film. The semi-amorphous semiconductor film has its Raman spectrum shifted to a lower wave number than 520 cm ⁻¹ , and is derived from a Si crystal lattice in X-ray diffraction (1
11) and (220) diffraction peaks are observed. Also, unbonded hands (dangling bonds)
Is contained at least 1 atomic% or more of hydrogen or halogen. In this specification, for convenience, such a semiconductor film is referred to as a semi-amorphous semiconductor (SAS) film. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a good semi-amorphous semiconductor film can be obtained.

The SAS film can be obtained by glow discharge decomposition of a gas containing silicon. A typical gas containing silicon (Si) is SiH ₄ , and Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4, and the} like can be used. Further, by diluting and using a gas containing silicon (silicon) with hydrogen or a gas obtained by adding one or more kinds of rare gas elements selected from helium, argon, krypton, or neon to hydrogen, Formation can be facilitated. Dilution rate is 2 to 100
It is preferable to dilute a gas containing silicon (silicon) in a range of 0 times. Further, in a gas containing silicon (silicon), carbide gas such as CH ₄ and C ₂ H ₆ , GeH ₄ , GeF ₄
A germanium gas such as, such as by mixing the _{F 2,} an energy band width 1.5-2.
You may adjust to 4 eV or 0.9-1.1 eV.

Further, a semiconductor layer may be disposed under the gate line 105. Accordingly, capacitive coupling between the conductive film 115 and the gate line 105 can be reduced. Therefore, the gate line 105
Can be quickly charged and discharged, and waveform rounding can be suppressed.

A gate insulating film 104 of the thin film transistor 121 is formed on the entire surface including the semiconductor film 103.

However, the gate insulating film 104 may be disposed only in the vicinity of the channel region and may not be disposed in other portions. In addition, the thickness, laminated structure, and thickness may vary depending on the location. For example, the thickness may be thick only near the channel or the number of layers may be large, and the thickness may be small or the number of layers may be small in other locations. By doing this,
The addition of impurities to the source region and the drain region can be easily controlled. Further, by changing the thickness of the gate insulating film 104 and the number of layers in the vicinity of the channel, the LDD region can be formed so that the amount of impurities added to the semiconductor film varies depending on the location. By forming the LDD region, leakage current can be reduced, and generation of hot carriers can be suppressed and reliability can be improved.

In the region where the pixel electrode 113 is formed, the gate insulating film 104 may not be formed. The distance between the pixel electrode 113 and the conductive film 113 can be reduced, and electric field control is facilitated.

The gate insulating film 104 includes, for example, silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon oxide containing nitrogen (SiO _x N _y : x> y), silicon nitride containing oxygen (SiN _x O _y : x > Y
) Or the like. Further, a laminated film in which a plurality of these films are laminated may be used. A gate electrode 105 located above the semiconductor film 103 is formed on the gate insulating film 104.

As shown in FIGS. 4 and 3, the gate electrode (gate wiring) 105 is the same wiring layer as the wiring 119.

A first interlayer insulating film 106 is formed on the gate insulating film 104 and the gate electrode 105. An inorganic material or an organic material can be used for the first interlayer insulating film 106. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, siloxane, polysilazane, or the like can be used. Inorganic materials include silicon oxide (S
iO _x ), silicon nitride (SiN _x ), silicon oxide containing nitrogen (SiO _x N _y : x> y), silicon nitride containing oxygen (SiN _x O _y : x> y), etc., insulation having oxygen or nitrogen Formed from material. Further, a laminated film in which a plurality of these films are laminated may be used. Alternatively, a stacked film may be formed by combining an organic material and an inorganic material.

In the insulating film 102, the gate insulating film 104, and the first interlayer insulating film 106, a contact hole located on the region 131a, a contact hole located on the region 131b, the conductive film 11
A contact hole located on 5 and a contact hole located on the wiring 119 are formed. A source wiring 107, an electrode 108, and a connection electrode 109 are formed on the first interlayer insulating film 106.

Note that entry of moisture and impurities can be stopped by using an inorganic material for the insulating film. In particular, when a layer containing nitrogen is used, the function of blocking moisture and impurities is high.

Note that the surface can be flattened by using an organic material for the insulating film. Therefore, a good effect can be brought about on the layer above it. For example, since a layer formed over an organic material can be flattened, disorder of alignment of liquid crystals can be prevented.

The source wiring 107 is located above the region 131a and is electrically connected to the region 131a through a contact hole. Therefore, the electrode 108 is electrically connected to the region 131b through the contact hole.

However, the pixel electrode 113 and the impurity region 131b may be directly connected without using a conductive film for connection. In this case, a contact hole for connecting the pixel electrode 113 and the region 131b needs to be deeply formed. However, since the conductive film for connection is not necessary, the region can be used as an opening region for image display. Therefore, the aperture ratio can be improved and the power consumption can be reduced.

The connection electrode 109 is located above the wiring 119 and is electrically connected to each of the wiring 119 and the conductive film 115. As described above, the conductive film 115 is electrically connected to the wiring 119 through the connection electrode 109. A plurality of connection electrodes 109 may be provided. In this way, the potential of the conductive film 115 is stabilized. Further, by connecting the conductive film 115 and the wiring 119 through the connection electrode 109, the number of contact holes can be reduced, so that the process steps can be simplified.

Note that although the connection electrode 109 is formed using the same material as the source wiring 107 at the same time, the invention is not limited to this. The same material may be used simultaneously with the pixel electrode 113.

A second interlayer insulating film 111 is formed on the source wiring 107, the electrode 108, the connection electrode 109, and the first interlayer insulating film 106. Note that the second interlayer insulating film 111 may not be formed (see FIG. 28). An inorganic material or an organic material can be used for the second interlayer insulating film 111. As the organic material, polyimide, acrylic, polyamide, polyimide amide, resist, siloxane, polysilazane, or the like can be used. As an inorganic material, silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon oxide containing nitrogen (SiO 2)
_{xN y} : x> y), silicon nitride containing oxygen (SiN _x O _y : x> y), or the like, formed from an insulating material having oxygen or nitrogen. Further, a laminated film in which a plurality of these films are laminated may be used. Alternatively, a stacked film may be formed by combining an organic material and an inorganic material.

FIG. 28 shows a cross-sectional view when the second interlayer insulating film 111 is not formed. In FIG. 28, the same components as those in FIG. 3 are denoted by the same reference numerals. Since the electrode 108 is not formed, the pixel electrode 1
13 is directly connected to the island-shaped semiconductor film 103. The source wiring 107, the pixel electrode 113, the pixel electrode 114, and the connection electrode 109 are formed using the same material and the same process. FIG.
In the configuration shown in FIG. 8, the distance between the pixel electrode 113 and the conductive film 105 can be reduced, and the electric field can be easily controlled.

On the second interlayer insulating film 111, pixel electrodes 113 and 114 which are FSS-driven second electrodes.
a, 114b, 114c, etc. are formed. In FIG. 1 and FIG. 3 which are cross-sectional views, the pixel electrode 113 and the pixel electrode 114 (114a, 114b, 114c, etc.) are separated for convenience. As can be seen from FIG. A groove (also referred to as “opening”, “slit”, “gap”, “gap”, “space”) 117 (117a, 117b, 117c, etc.) is formed in the conductive film formed by the same material and in the same process. It is what has been. Therefore, in the following description, the pixel electrodes 113 and 114 (114a, 114b, 114c, etc.)
May be collectively described as the pixel electrode 113.

The pixel electrode 113 functions as a pixel electrode to which an individual voltage is supplied for each pixel, and the ITO
(Indium oxide tin oxide alloy), ZnO (zinc oxide), indium oxide 2 to 20 wt
% IZO (Indium Zinc Oxide) formed using a target combined with ZnO
It is made of tin oxide (SnO) or the like. A part of the pixel electrode 113 is the electrode 108.
Is electrically connected to the electrode 108. Thus, the pixel electrode 11
3 is electrically connected to the region 131 b of the thin film transistor 121 through the electrode 108.

Note that when there is no connection electrode 109, the pixel electrode 113 is directly connected to the region 131 b of the thin film transistor 121.

As shown in FIGS. 3 and 4, the pixel electrode 113 has a substantially rectangular shape, and a plurality of grooves 117a, 1
17b, 117c, etc. Examples of the grooves 117a, 117b, 117c, etc. include many slits that are parallel to each other.

In the example shown in FIG. 4, the direction of the grooves 117a, 117b, 117c,.
The direction of the grooves located in the upper half of the pixel and the grooves located in the lower half of the pixel are different from each other. By forming the grooves 117a, 117b, 117c,..., The conductive film 1
An electric field having a component parallel to the substrate between 15 and the pixel electrode 113 is generated from each of the pixel electrodes 114 toward the conductive film 115. Therefore, by controlling the potentials of the pixel electrodes 113 and 114, the alignment direction of the liquid crystal described later can be controlled.

Further, as shown in FIG. 4, the grooves 117 (117a, 117b, 117c,...) Are arranged in different directions. This makes it possible to provide a plurality of regions in which the liquid crystal molecules move in different directions. That is, it can be a multi-domain structure. By adopting a multi-domain structure, it is possible to prevent the image from being displayed incorrectly when viewed from a specific direction, and as a result, the viewing angle can be improved.

The shape of the groove is not limited to the shape of this embodiment. The groove shape includes, for example, a space where no conductor is formed, such as a space between comb teeth in a comb-shaped electrode.

Note that in the case where the thickness of the pixel electrode 113 is compared with the thickness of the conductive film 115, the conductive film 115 is preferably thicker. Furthermore, it is more preferable that the conductive film 115 is 1.5 times or more thicker than the pixel electrode 113 and has a larger film thickness. By doing so, the resistance can be reduced.

A first alignment film 112 and a liquid crystal 116 are formed on the second interlayer insulating film 111 and the pixel electrode 113.
Are stacked. As the liquid crystal 116, a ferroelectric liquid crystal (FLC), a bistable liquid crystal, a nematic liquid crystal, a smectic liquid crystal, a polymer dispersed liquid crystal, a liquid crystal with homogeneous alignment, a liquid crystal with homeotropic alignment, or the like is used. Can do. Other than the liquid crystal, for example, an electric video device or the like may be used. On the liquid crystal 116, the counter substrate 120 is disposed via the second alignment film 123 and the color filter 122. In addition,
Polarizers 126 and 124 are provided on the substrate 101 and the counter substrate 120, respectively.

  In addition to the polarizing plate, a retardation plate, a λ / 4 plate, or the like is often disposed.

Note that in the above structure, a capacitor is formed by the conductive film 115, the portion of the pixel electrode 113 where the groove is not formed, and the insulating films positioned therebetween. The formation of this capacity increases the storage capacity.

Next, an example of a method for manufacturing the semiconductor device and the liquid crystal display device of the present invention will be described. First,
A light-transmitting conductive film 115 over the substrate 101 (eg, indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or silicon (
Si)) is formed on the entire surface of the substrate.

As shown in FIG. 25, the insulating film 106 may be removed at the opening. Further alternatively, the gate insulating film 104 and the base film 102 may be removed. That is, a semiconductor device from which the insulating film 106 has been removed at the opening, a semiconductor device from which the insulating film 106 and the gate insulating film 104 have been removed from the opening, and a semiconductor from which the insulating film 106, the gate insulating film 104, and the base film 102 have been removed from the opening It is possible to make a device. As a result, the distance d between the pixel electrode 114 and the conductive film 115 can be reduced, and as a result, the electric field can be easily controlled.

Next, the insulating film 102 is formed over the substrate 101 and the conductive film 115, respectively. The insulating film 102 is desirably formed thicker than a gate insulating film 104 described later. Next, a semiconductor film (eg, a polycrystalline silicon film) is formed over the insulating film 102, and this semiconductor film is selectively removed by etching using a resist. Thus, an island-shaped semiconductor film 103 is formed on the insulating film 102.

As the semiconductor film, not only a polycrystalline silicon film but also an amorphous silicon film or other non-single-crystal silicon film may be used. Further, the semiconductor is not limited to silicon, and a compound semiconductor such as ZnO, a-InGaZnO, SiGe, or GaAs may be used.

Alternatively, the substrate 101 may be a semiconductor substrate or SOI (Silicon On Insula).
tor) the island-shaped semiconductor film 103 may be formed using a substrate.

Next, the gate insulating film 104 is formed over the semiconductor film 103 and the insulating film 102. The gate insulating film 104 is, for example, a silicon oxide film containing silicon or a silicon oxide film, and is formed by plasma CVD.
Formed by law. Note that the gate insulating film 104 may be formed using a silicon nitride film or a multilayer film including silicon nitride and silicon oxide. Next, a conductive film is formed over the gate insulating film 104, and the conductive film is selectively removed by etching. This
A gate electrode 105 is formed on the gate insulating film 104 located on the semiconductor film 103. Further, the gate wiring 105 and the wiring 119 are formed by this step.

Note that by providing the wiring 119 as described above, the potential of the conductive film 115 can be stabilized in each pixel. Further, the wiring 119 is not necessarily formed. Further, the wiring 119 may be provided in another layer (eg, the same layer as the source wiring 107, the same layer as the conductive film 115, or the same layer as the pixel electrode 113), and is formed by being divided into a plurality of layers. May be. Further, although the wiring 119 extends in a direction orthogonal to the source wiring 107 in this drawing, a configuration in which the wiring 119 extends in the same direction as the source wiring 107 may be employed.

Note that the conductive film forming the gate electrode 105 and the wiring 119 includes aluminum (Al), tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium (Cr), Nickel (Ni), Platinum (Pt), Gold (Au), Silver (Ag
), Copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn), niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (A)
s), gallium (Ga), indium (In), tin (Sn), one or more elements selected from the group consisting of oxygen (O), or one or more elements selected from the above group Compounds containing these elements, alloy materials (for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium tin oxide containing silicon oxide (ITSO), zinc oxide (
ZnO), tin oxide (SnO), tin cadmium oxide (CTO), aluminum neodymium (Al-
Nd), magnesium silver (Mg—Ag), molybdenum niobium (Mo—Nb), and the like. Alternatively, the conductive film included in the gate electrode 105 and the wiring 119 is preferably formed using a material in which these compounds are combined. Or one or more elements selected from the above group and a silicon compound (silicide) (for example,
(Aluminum silicon, molybdenum silicon, nickel silicide, etc.), and one or more elements selected from the above group and a nitrogen compound (eg, titanium nitride, tantalum nitride, molybdenum nitride, etc.) are preferable. .

Note that silicon (Si) may contain an n-type impurity (such as phosphorus) or a p-type impurity (such as boron). When silicon contains impurities, the conductivity can be improved or the same behavior as a normal conductor can be achieved. Therefore, it becomes easy to use as wiring, electrodes, and the like.

Note that silicon having various crystallinity such as single crystal, polycrystal (polysilicon), and microcrystal (microcrystal silicon) can be used. Alternatively, silicon having no crystallinity such as amorphous (amorphous silicon) can be used. By using single crystal silicon or polycrystalline silicon, wiring, electrodes, conductive layers,
Resistance of conductive films, terminals, etc. can be reduced. By using amorphous silicon or microcrystalline silicon, a wiring or the like can be formed by a simple process.

Note that since aluminum or silver has high conductivity, signal delay can be reduced. Further, since etching is easy, patterning is easy and fine processing can be performed.

Note that since copper has high conductivity, signal delay can be reduced. When copper is used, it is desirable to have a laminated structure in order to improve adhesion.

Molybdenum or titanium is preferable because it has advantages such as no defects, easy etching, and high heat resistance even when in contact with an oxide semiconductor (ITO, IZO, or the like) or silicon.

  Tungsten is desirable because it has advantages such as high heat resistance.

Neodymium is desirable because it has advantages such as high heat resistance. In particular, when an alloy of neodymium and aluminum is used, the heat resistance is improved, and aluminum does not easily cause hillocks.

Silicon is preferable because it can be formed at the same time as a semiconductor layer included in a transistor and has high heat resistance.

In addition, ITO, IZO, ITSO, zinc oxide (ZnO), silicon (Si), tin oxide (
SnO) and tin cadmium oxide (CTO) have a light-transmitting property, and thus can be used for a portion that transmits light. For example, it can be used as a pixel electrode or a common electrode.

Note that IZO is desirable because it is easy to etch and process. It is difficult for IZO to leave a residue when it is etched. Therefore, if IZO is used as the pixel electrode, there is a problem with the liquid crystal element or light emitting element (short circuit, disorder of alignment, etc.)
Can be reduced.

Note that the conductive film included in the gate electrode 105 and the wiring 119 may have a single-layer structure or a multilayer structure. With a single-layer structure, the manufacturing process of the conductive film forming the gate electrode 105 and the wiring 119 can be simplified, the number of process days can be reduced, and the cost can be reduced. Alternatively, by using a multilayer structure, it is possible to reduce the demerits while making use of the merits of each material, and to form wirings, electrodes, and the like with good performance. For example, by including a low resistance material (such as aluminum) in the multilayer structure, the resistance of the wiring can be reduced. In addition, by using a laminated structure in which a low heat resistant material is sandwiched between high heat resistant materials, the heat resistance of a wiring, an electrode, or the like can be increased while taking advantage of the low heat resistant material. For example, the layer containing aluminum is molybdenum, titanium,
It is desirable to have a laminated structure sandwiched between layers containing neodymium or the like.

In addition, when wires, electrodes, etc. are in direct contact with each other, they may adversely affect each other. For example, one wiring, an electrode, or the like enters a material such as the other wiring, an electrode, etc., which changes the properties and cannot fulfill its original purpose. As another example, when a high resistance portion is formed or manufactured, a problem may occur and the manufacturing may not be performed normally. In such a case, it is preferable to sandwich or cover a material that reacts more easily by a laminated structure with a material that does not react easily. For example, when ITO and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum. When silicon and aluminum are connected, it is desirable to sandwich titanium, molybdenum, or a neodymium alloy between ITO and aluminum.

In addition, wiring means what the conductor is arrange | positioned. It may extend linearly or may be arranged short without extending. Therefore, the electrode is included in the wiring.

Next, impurities are implanted into the semiconductor film 103 using the gate electrode 105 as a mask. Accordingly, the semiconductor film 103 has a region 131a which is one of the source region and the drain region.
131b, which is the other of the source region and the drain region, and a channel formation region 132 are formed. Note that the n-type and p-type impurity elements may be implanted separately, or both the n-type impurity element and the p-type impurity element may be implanted into a specific region. However, in the latter case,
The implantation amount of either the n-type impurity element or the p-type impurity element is increased.
Note that a resist may be used as a mask in this step.

Note that at this time, the LDD region may be formed by changing the thickness or the stacked structure of the gate insulating film 104. In the portion where the LDD region is to be formed, the gate insulating film 104 may be thickened or the number of layers may be increased. As a result, the amount of impurity implantation is reduced, so that the LDD region can be easily formed.

Note that the impurity may be implanted into the semiconductor film 103 before the gate electrode 105 is formed, for example, before or after the gate insulating film 104 is formed. In that case, the resist is used as a mask. Thus, a capacitor can be formed between the electrode in the same layer as the gate and the semiconductor film into which the impurity is implanted. Since the gate insulating film is disposed between the electrode of the same layer as the gate and the semiconductor film into which the impurity is implanted,
The film thickness is thin and a large capacity can be formed.

Next, a first interlayer insulating film 106 is formed, and further contact holes are formed. Next, a conductive film (eg, a metal film) is formed over the first interlayer insulating film 106, and the conductive film is selectively removed by etching using a mask. Thus, the source wiring 107 and the electrode 108
And the connection electrode 109 are formed.

Next, a second interlayer insulating film 111 is formed, and further contact holes are formed. Next, a light-transmitting conductive film (indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), or silicon) is formed over the second interlayer insulating film 111.
Si)) is formed, and the conductive film is selectively removed by etching using a resist. Thereby, the pixel electrode 113 is formed.

If the contact hole filled with a part of the electrode 108 and the contact hole filled with a part of the pixel electrode 113 have the same position, the contact hole can be accommodated in one place, so that the layout can be efficiently performed. I can do it. Therefore, the aperture ratio of the pixel can be improved.

On the other hand, the contact hole filled with a part of the electrode 108 and the contact hole filled with a part of the pixel electrode 113 may have different positions. By doing in this way, even if the part located on a contact hole among the electrode 108 and the pixel electrode 113 is depressed, this depression does not overlap. For this reason, a deeply depressed portion is not formed in the pixel electrode 113, and the occurrence of the above-described resist throwing-in defect can be suppressed. Thereafter, the resist is removed.

Next, the first alignment film 112 is formed, and the liquid crystal 116 is sealed between the color filter 122 and the counter substrate 120 on which the second alignment film 123 is formed. Thereafter, polarizing plates 126 and 124, a retardation plate (not shown), λ /
An optical film (not shown) such as four plates, an optical film such as a diffusion plate or a prism sheet, and the like are provided. Furthermore, a backlight and a front light are provided. As the backlight, a direct type or a side light type can be used. As the light source, a cold cathode tube or an LED (light emitting diode) can be used. As the LED, a white LED or an LED for each color (for example,
White, red, blue, green, cyan, magenta, yellow, etc.) may be used in combination. L
When ED is used, since the wavelength of light is sharp, color purity can be increased. In the case of the side light type, a light guide plate is arranged to realize a uniform surface light source. In this way, a liquid crystal display device is formed.

Note that the liquid crystal display device may refer to a substrate, a counter substrate, and only a portion of liquid crystal sandwiched therebetween. In addition, the liquid crystal display device may include an optical film such as a polarizing plate or a retardation plate, and in addition, a diffusion plate, a prism sheet, a light source (a cold cathode tube or an LED).
Etc.) or a light guide plate.

In this embodiment, a so-called top-gate thin film transistor in which a gate electrode is disposed above a channel region has been described, but the present invention is not particularly limited thereto. A so-called bottom-gate thin film transistor in which a gate electrode is disposed below a channel region may be used, or a transistor having a structure in which gate electrodes are disposed above and below a channel region may be formed.

In this embodiment mode, a so-called single gate TF in which one gate electrode is formed.
Although T has been described, a so-called multi-gate type TF in which two or more gate electrodes are formed
T may be formed.

The liquid crystal display device may be a transmissive type or a reflective type liquid crystal display device. In a reflective liquid crystal display device, for example, a light-transmitting film (for example, indium tin oxide (ITO) film, indium zinc oxide (IZO), zinc oxide (ZnO), or impurities) is introduced into the conductive film 115. It can be realized by forming the pixel electrode 113 with a reflective conductive film such as a metal film. Alternatively, the pixel electrode 113 may be formed of a light transmissive film, and a part of the conductive film 115 may be formed of a reflective conductive film, such as a metal film, and the rest may be formed of a light transmissive film. A transflective liquid crystal display device can be realized.

In the reflective liquid crystal display device, the conductive film 115 can be a reflective conductive film, for example, a metal film, whereby the conductive film 115 can have a function of a reflective plate. Pixel electrode 11
3 and the conductive film 115 can both be reflective conductive films, or one of them can be a reflective conductive film. Further, an insulating film (eg, a silicon oxide film) can be provided between the substrate 101 and the conductive film 115, and a metal film as a reflective film can be formed in the insulating film. Further, a reflection sheet (for example, an aluminum film) as a reflection film can be provided on the outer surface of the substrate 101. Note that the contents described here can be similarly applied to the embodiments described later.

According to this embodiment, a liquid crystal display device having a wide viewing angle and lower manufacturing cost than the conventional one can be provided.

In this embodiment mode, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. As a result, a highly reliable semiconductor device can be obtained.

In this embodiment mode, a semiconductor device including a top-gate thin film transistor is manufactured; therefore, a highly reliable semiconductor device in which the potential of the back gate is stable can be obtained.

[Embodiment 2]
In this embodiment, an example in which a bottom gate TFT is manufactured as a switching element in a pixel portion will be described with reference to FIGS.

On the substrate 201, the conductive film 202, the base film 203, the gate electrode 204, and the gate insulating film 21
3, an island-shaped semiconductor film 206 serving as an active layer, a region 208a which is one of a source region and a drain region, a region 208b which is the other of the source region and the drain region, an electrode 207a which is one of a source electrode and a drain electrode, and a source electrode Alternatively, an electrode 207a which is the other of the drain electrodes, and pixel electrodes 209 and 214 (214a, 214b, 214c, etc.) are formed. Gate electrode 204, gate insulating film 213, island-shaped semiconductor film 206, region 208a
The region 208b constitutes the TFT 212.

A lateral electric field 225 is generated between the electrode 214 and the conductive film 202. As a result, the liquid crystal molecules are driven.

On the base film 203, the electrode 2 formed by the same material and the same process as the gate electrode 204 is formed.
05 is arranged. An electrode 211 formed over the insulating film 210 and formed using the same material and the same process as the electrode 209 is provided. The electrode 211 includes a base film 203 and a gate insulating film 2
13, the conductive film 202 and the electrode 205 through the contact hole formed in the insulating film 210.
Is electrically connected.

  The substrate 201 may be formed using the same material as the substrate 101.

  As the conductive film 202, a conductive film similar to the conductive film 115 described in Embodiment 1 may be used.

  The base film 203 may be formed using a material similar to that of the base film 102.

The gate electrode 204 and the electrode 205 may be formed using a material and a process that are similar to those of the gate electrode 105. The gate insulating film 213 is the gate insulating film 104 or the insulating film 10.
6 on the entire surface of the substrate 201.

Note that in this embodiment mode, a so-called single gate TF in which one gate electrode is formed.
T will be described. A so-called multi-gate type TF in which two or more gate electrodes are formed.
T may be formed.

The island-shaped semiconductor film 206 which is an active layer may be formed using a material similar to that of the island-shaped semiconductor film 103. An amorphous semiconductor film and a microcrystal semiconductor film (semi-amorphous semiconductor film) are preferable. In that case, after forming an intrinsic semiconductor film (island-like semiconductor film 206),
A semiconductor film containing an impurity imparting one conductivity is formed. As the impurity imparting one conductivity type, for example, phosphorus (P), arsenic (As), or the like may be used if it is an impurity imparting n-type, and boron (B) is used as an impurity imparting p-type. That's fine. Since the bottom-gate TFT of this embodiment mode adopts a channel etch type, after forming the island-shaped semiconductor film, the source electrode, and the drain electrode, it is necessary to etch part of the channel formation region.

Next, a conductive film is formed over the gate insulating film 213 and the island-shaped semiconductor film 206, and then part of the semiconductor film containing an impurity imparting one conductivity is etched, so that the regions 208a and 208 are etched.
b is formed. The region 207a and the region 207b are formed by etching.

An insulating film 210 is formed over the island-shaped semiconductor film 206, the region 208a, the region 208b, the electrode 207a, and the electrode 207b. The insulating film 210 has the same material and the same process as the insulating film 106 or the insulating film 111. May be used. However, when an organic material is not used for the insulating film 210, the distance d between the pixel electrode 214 and the conductive film 202 can be reduced, and electric field control is facilitated.

On the insulating film 210, pixel electrodes 209 and 214 (214a, 214b, 214c,...)
The electrode 211 is formed. Similar to the pixel electrodes 113 and 114, the pixel electrodes 209 and 214 are obtained by forming grooves in the conductive film.

The electrode 211 is electrically connected to the electrode 205 through a contact hole formed in the gate insulating film 213 and the insulating film 210. In addition, the base film 203 and the gate insulating film 21
3 and the contact hole formed in the insulating film 210 are electrically connected to the conductive film 202.

An alignment film 215 is formed on the electrode 208, the pixel electrodes 209 and 214, and the electrode 211. The alignment film 215 may be formed using a material similar to that of the alignment film 112.

On the counter substrate 221, a color filter 222 and an alignment film 223 are formed. The counter substrate 221, the color filter 222, and the alignment film 223 may be formed using the same materials as the counter substrate 120, the color filter 122, and the alignment film 123, respectively.

The alignment film 223 on the counter substrate 221 and the alignment film 215 on the substrate 201 face each other,
Liquid crystal 216 is injected into the gap.

Thereafter, the polarizing plate 224, 2 is applied to the counter substrate 221 or the substrate 201 on the side not in contact with the liquid crystal 216.
17. An optical film (not shown) such as a retardation plate (not shown) or a λ / 4 plate, an optical film such as a diffusion plate or a prism sheet, and the like are provided. Furthermore, a backlight and a front light are provided. As the backlight, a direct type or a side light type can be used. As the light source, a cold cathode tube or an LED (light emitting diode) can be used. As LED, white L
ED and LED for each color (for example, white, red, blue, green, cyan, magenta, yellow, etc.)
May be used in combination. When an LED is used, since the wavelength of light is sharp, color purity can be increased. In the case of the side light type, a light guide plate is arranged to realize a uniform surface light source.
In this way, a liquid crystal display device is formed.

FIG. 26 shows an example in which the active layer of the TFT 212 is formed of a crystalline semiconductor film. In FIG. 26, the same components as those in FIG. In FIG. 26, the TFT 212 includes a crystalline island-shaped semiconductor film 253 as an active layer. The crystalline island-shaped semiconductor film 253 includes a channel formation region 256, a region 258a that is one of a source region and a drain region, and a source region. Alternatively, the region 258b which is the other of the drain regions is included.

In place of the electrode 211 in FIG. 26, an electrode 251 formed using the same material and in the same process as the electrode 207a which is one of the source electrode and the drain electrode and the electrode 207b which is the other of the source electrode and the drain electrode is used.

Note that in this embodiment mode, only the TFT 121 in Embodiment Mode 1 is replaced with a bottom-gate TFT 212, so that the manufacturing materials and manufacturing steps in other structures can be referred to those described in Embodiment Mode 1. Good.

According to this embodiment, a liquid crystal display device having a wide viewing angle and lower manufacturing cost than the conventional one can be provided.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. This makes it possible to obtain a highly reliable liquid crystal display device.

[Embodiment 3]
In the present embodiment, the electrode 108 of the first embodiment is not formed, and the pixel electrode 113 is directly connected to the region 1.
An example formed so as to be connected to 31b is shown in FIG. The reference numerals in FIG. 6 refer to those in the first embodiment. The materials described in Embodiment Mode 1 may be referred to for manufacturing materials and manufacturing processes in other structures. This embodiment has an advantage that the aperture ratio is high because the electrode 108 is not formed.

  If necessary, the bottom gate TFT described in Embodiment Mode 2 may be used.

According to this embodiment, a liquid crystal display device having a wide viewing angle and lower manufacturing cost than the conventional one can be provided.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. This makes it possible to obtain a highly reliable liquid crystal display device.

In the present invention, when a liquid crystal display device including a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable liquid crystal display device can be obtained.

[Embodiment 4]
This embodiment will be described with reference to FIGS. 10, 11, 12, and 13. FIG. 10 and 11
The reference numerals in FIGS. 12 and 13 refer to those in the first embodiment. The materials described in Embodiment Mode 1 may be referred to for manufacturing materials and manufacturing processes in other structures.

  If necessary, the bottom gate TFT described in Embodiment Mode 2 may be used.

If necessary, the structure described in Embodiment 3 in which the pixel electrode is directly connected to the active layer may be used.

In FIG. 10, instead of the connection electrode 109 in FIG. 6, an electrode 141 formed using the same material and the same process as the pixel electrode 113 is used. The wiring 119 and the conductive film 115 are electrically connected through the electrode 141.

A top view of FIG. 10 is shown in FIG. Also in FIG. 11, the same components as those in FIGS. 4 and 10 are denoted by the same reference numerals. FIG. 10 is a cross-sectional view taken along the lines CC ′ and DD ′ in FIG.

In FIG. 12, instead of the connection electrode 109 in FIG. 6, the electrode 141 formed in the same material and the same process as the pixel electrode 113 and the same material and the same process as the electrode 107 and the electrode 108 are used. The formed electrode 142 is used. The wiring 119 and the conductive film 115 are formed of the electrode 14
1 and the electrodes 142 are electrically connected.

A top view of FIG. 12 is shown in FIG. In FIG. 13, the same components as those in FIGS. 4 and 12 are denoted by the same reference numerals. FIG. 12 is a sectional view taken along lines CC ′ and EE ′ in FIG.

According to this embodiment, a liquid crystal display device having a wide viewing angle and lower manufacturing cost than the conventional one can be provided.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. This makes it possible to obtain a highly reliable liquid crystal display device.

In the present invention, when a liquid crystal display device including a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable liquid crystal display device can be obtained.

[Embodiment 5]
In this embodiment, examples in which pixel electrodes are formed in various shapes are shown in FIGS.
D) and shown in FIGS. 9A to 9D. Reference numerals in FIGS. 7, 8 </ b> A to 8 </ b> D, and 9 </ b> A to 9 </ b> D refer to those in the first embodiment. The materials described in Embodiment Mode 1 may be referred to for manufacturing materials and manufacturing processes in other structures.

  If necessary, the bottom gate TFT described in Embodiment Mode 2 may be used.

If necessary, the structure described in Embodiment 3 in which the pixel electrode is directly connected to the active layer may be used.

Further, the connection structure of the conductive film 115 and the wiring 119 described in Embodiment 4 may be used.

FIG. 7 shows the pixel electrode 113 formed in a comb shape. AA ′ and B− in FIG.
The cross-sectional view of B ′ is the same as FIG. In FIGS. 8A to 8B, only the pixel electrode 113 and the conductive film 115 are shown in consideration of easy viewing of the drawings.

In FIG. 8A, the pixel electrode 113 has a plurality of slit-like openings. The slit-shaped opening is oblique to the source wiring. In addition, the slit-shaped opening formed in the upper half of the pixel electrode 113 and the slit-shaped opening formed in the lower half of the pixel electrode 113 have different angles with respect to the center line of the pixel electrode 113. . Pixel electrode 113
The slit-like opening formed in the upper half of the pixel electrode and the slit-like opening formed in the lower half of the pixel electrode 113 may be axisymmetric with respect to the center line.

In FIG. 8B, the pixel electrode 113 has a shape in which a plurality of electrodes having different radii are concentrically arranged and connected to each other along the circumference. The space between the electrodes serves as an opening.

In FIG. 8C, a pixel electrode 113 is formed by arranging two comb-shaped electrodes in opposite directions and with the comb-tooth portions staggered. And the space located between the comb teeth portions serves as an opening.

In FIG. 8D, the pixel electrode 113 has a comb-like shape, and a space between the comb-teeth portions serves as an opening.

In FIG. 9A, the pixel electrode 113 has a stripe shape in an oblique direction, and a space located between the stripe portions serves as an opening.

  In FIG. 9B, a plurality of rectangular openings are formed in the pixel electrode 113.

In FIG. 9C, in the pixel electrode 113, an elongated rectangular opening having two wavy sides facing each other is formed.

In FIG. 9D, an elongated rectangular opening is formed in the pixel electrode 113.

According to the present invention, it is possible to provide a liquid crystal display device having a wide viewing angle and having a lower manufacturing cost than the conventional one.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. This makes it possible to obtain a highly reliable liquid crystal display device.

In the present invention, when a liquid crystal display device including a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable liquid crystal display device can be obtained.

[Embodiment 6]
In this embodiment, an example in which a color filter is provided in a place different from that in Embodiment 1 will be described.
This will be described with reference to FIGS. 22, 23A to 23B, and FIG.

FIG. 22 is a cross-sectional view for explaining the structure of the pixel portion of the FFS mode liquid crystal display device according to this embodiment. The pixel portion of the liquid crystal display device according to this embodiment does not include a color filter on the counter substrate 120 side, and instead of the interlayer insulating film 106, a color filter 241 (a red color filter 241R, a blue color filter 241B, and Green color filter 241
The configuration is the same as that of the liquid crystal display device described in Embodiment 1 except that G) is disposed.

Therefore, the contents described in other embodiments than the first embodiment can be applied to this embodiment. Hereinafter, the same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted.

Note that an insulating film of an inorganic material may be provided between the color filter 241 and the gate electrode 105. As the inorganic material, an insulating material containing oxygen or nitrogen such as silicon oxide, silicon nitride, silicon oxide containing nitrogen, or silicon nitride containing oxygen is used. In order to block the entry of impurities, it is desirable to use a material containing a large amount of nitrogen. Further, a planarization film may be formed over the color filter 241.

The color of the color filter 241 may be a color other than red, blue, and green, or more than three colors, for example, four or six colors. For example, yellow, cyan, magenta, and white may be added. Further, not only a color filter but also a black matrix may be arranged. Further, the black matrix may be formed of a resin material or a metal film. Further, the black matrix may be formed using carbon black.

Thus, by disposing the color filter 241 on the substrate 101, the counter substrate 1
Since it is not necessary to accurately align the position 20, manufacturing can be easily performed, cost is reduced, and manufacturing yield is improved.

The manufacturing method of the liquid crystal display device according to this embodiment is the same as that in Embodiment 1 except that a step of forming a color filter 241 (241R, 241G, 241B) is included instead of the step of forming the interlayer insulating film 106. This is the same as the manufacturing method of the liquid crystal display device according to the above.

The color filters 241R, 241G, and 241B are steps for forming a color filter layer,
It is formed by repeating a step of forming a resist on the color filter layer and a step of selectively dry-etching the color filter layer using the resist as a mask three times.

Alternatively, it is formed using a photosensitive material or a pigment without using a resist. Note that a space is generated between the color filter layers, and the interlayer insulating film 111 is embedded in this space. Alternatively, an inorganic material or an organic material is further laminated. Alternatively, a black matrix or the like is laminated. The color filters 241R, 241G, and 241B and the black matrix can also be formed by using a droplet discharge method (for example, an ink jet method).

For this reason, the number of manufacturing steps of the liquid crystal display device can be reduced. In addition, since the color filter is provided on the substrate 101 side, it is possible to suppress a decrease in the aperture ratio even if a positional deviation occurs between the counter substrate 120 and the color filter provided on the counter substrate 120. . That is, the margin for the positional deviation of the counter substrate 120 is increased.

FIG. 23A is a plan view of the liquid crystal display device shown in FIG. As shown in FIG. 23A, in the liquid crystal display device in this embodiment, a source line driver circuit 152 and a gate line driver circuit 154 which are peripheral driver circuits are provided around a pixel portion 150.

A red color filter 241R may be provided over each of the source line driver circuit 152 and the gate line driver circuit 154. By providing the color filter 241R, light deterioration of the active layer of the thin film transistor included in the source line driver circuit 152 and the gate line driver circuit 154 is prevented and planarization is achieved.

FIG. 23B is an enlarged view of a part (3 × 3 matrix) of the pixel portion 150 in FIG. The pixel portion 150 includes a red color filter 241R and a blue color filter 241B.
And green color filters 241G are alternately arranged in a stripe pattern. In addition, a red color filter 241R is disposed over the thin film transistor included in each pixel.

Further, since the source wiring (not shown) and the gate wiring (not shown) are arranged so as to overlap with the space between the color filters, the occurrence of light leakage is suppressed.

As described above, since the color filter 241R plays the role of a black matrix, it is possible to omit the black matrix forming step which has been conventionally required.

As described above, according to the present embodiment, the same effects as those of the other embodiments can be obtained. In addition, since the color filters 241R, 241G, and 241B are provided instead of the interlayer insulating film 106, the number of manufacturing steps of the liquid crystal display device can be reduced. In addition, as compared with the case where a color filter is provided on the counter substrate 120, a decrease in the aperture ratio can be suppressed even if a positional shift occurs between the counter substrate 120 and the counter substrate 120. That is, the margin for the positional deviation of the counter substrate 120 is increased.

  Further, not only a color filter but also a black matrix may be arranged.

Note that in the FFS mode liquid crystal display device described in another embodiment, instead of the interlayer insulating film 106 or the second interlayer insulating film 111 (see FIG. 24), as in this embodiment,
Color filters 241 (241R, 241G, 241B) may be provided. Even in this case, the same effect as the present embodiment can be obtained.

[Embodiment 7]
In the present embodiment, a display panel configuration and a peripheral configuration of the display device will be described. In particular, a display panel (also referred to as a liquid crystal panel) configuration and a peripheral configuration of a liquid crystal display device will be described.

First, a simple structure of the liquid crystal panel will be described with reference to FIG. FIG. 29A is a top view of the liquid crystal panel.

In the liquid crystal panel illustrated in FIG. 29A, a pixel portion 20101, a scanning line side input terminal 20103, and a signal line side input terminal 20104 are formed over a substrate 20100. A scanning line extends from the scanning line side input terminal 20103 in the row direction and is formed on the substrate 20100, and a signal line extends from the signal line input terminal 20104 in the column direction and is formed on the substrate 20100. Also,
In the pixel portion 20101, the pixels 20102 are arranged on the matrix where the scanning lines and the signal lines intersect. In addition, in the pixel 20102, a switching element and a pixel electrode layer are arranged.

As shown in the liquid crystal panel in FIG. 29A, the scan line side input terminal 20103 is connected to the substrate 201.
00 is formed on both sides in the row direction. The signal line input terminal 20103 is formed on one side in the column direction of the substrate 20100. The scanning lines extending from one scanning line side input terminal 20103 and the scanning lines extending from the other scanning line side input terminal 20103 are alternately formed.

In each pixel 20102 of the pixel portion 20101, the first terminal of the switching element is connected to the signal line, and the second terminal is connected to the pixel electrode layer.
102 can be independently controlled by a signal input from the outside. Note that on / off of the switching element is controlled by a signal supplied to the scanning line.

Note that the pixels 20102 can be arranged with high density by arranging the scan line side input terminals 20103 in both of the row directions of the substrate 20100. Also, the signal line side input terminal 201
By arranging 03 in one of the column directions of the substrate 20100, the frame of the liquid crystal panel can be narrowed or the region of the pixel 20101 can be enlarged.

Note that as described above, the substrate 20100 includes a single crystal substrate, an SOI substrate, a glass substrate, a quartz substrate, a plastic substrate, a paper substrate, a cellophane substrate, a stone substrate, a stainless steel substrate, and a stainless steel foil. A substrate or the like can be used.

Note that as described above, a transistor, a diode (for example, a PN diode, a PIN diode, a Schottky diode, a diode-connected transistor, or the like), a thyristor, or a logic circuit combining them can be used as the switching element. .

Note that in the case where a TFT is used as the switching element, the gate of the TFT is connected to the scanning line, the first terminal is connected to the signal line, and the second terminal is connected to the pixel electrode layer. Can be controlled independently by an externally input signal.

Note that the scan line side input terminal 20103 may be arranged in one of the row directions of the substrate 20100. By arranging the scan line side input terminal 20103 in one of the row directions of the substrate 20100, the frame of the liquid crystal panel can be narrowed and the region of the pixel 20101 can be enlarged.

Note that the scanning line extending from one scanning line side input terminal 20103 and the scanning line extending from the other scanning line side input terminal 20103 may be shared.

Note that the signal line side input terminals 20103 may be arranged in both of the column directions of the substrate 20100. By arranging the signal line side input terminals 20103 in both the column directions of the substrate 20100, the pixels 20102 can be arranged with high density.

Note that a capacitor may be further formed in the pixel 20102. In the case where a capacitor is provided in the pixel 20102, a capacitor line may be formed over the substrate 20100. In the case where a capacitor line is formed over the substrate 20100, the first electrode of the capacitor is connected to the capacitor line and the second terminal is connected to the pixel electrode layer. In the case where a capacitor line is not formed over the substrate 20100, the first electrode of the capacitor is connected to a different scan line from the pixel 20102 in which the capacitor is disposed,
The second terminal is connected to the pixel electrode layer.

Here, the liquid crystal panel illustrated in FIG. 29A illustrates a configuration in which signals supplied to the scan lines and the signal lines are controlled by an external driver circuit. As illustrated in FIG. COG
The driver IC 20201 may be mounted on the substrate 20100 by a (Chip on Glass) method. As another configuration, as shown in FIG. 30B, TAB (Tap
e Auto Bonding) Driver IC 20201 is FPC
(Flexible Printed Circuit) 20200 may be implemented. In FIG. 30, the driver IC 20201 is connected to the FPC 20200.

Note that the driver IC 20201 may be formed over a single crystal semiconductor substrate or a circuit formed with TFTs over a glass substrate.

Note that in the liquid crystal panel illustrated in FIG. 29A, the scan line driver circuit 20105 may be formed over the substrate 20100 as illustrated in FIG. In addition, as shown in FIG.
The scan line driver circuit 20105 and the signal line driver circuit 20106 may be formed over the substrate 20100.

Note that the scan line driver circuit 20105 and the scan line driver circuit 2010 are each formed using a large number of N-channel transistors and a large number of P-channel transistors. However, it may be composed of only a large number of N-channel transistors or only a large number of P-channel transistors.

Next, details of the pixel 20102 will be described with reference to circuit diagrams of FIGS.

A pixel 20102 in FIG. 31A includes a transistor 20301, a liquid crystal element 20302, and a capacitor 20303. A gate of the transistor 20301 is connected to the wiring 20305 and a first terminal is connected to the wiring 20304. A first electrode of the liquid crystal element 20302 is connected to the counter electrode 20307, and a second electrode is connected to the second terminal of the transistor 20301. A first electrode of the capacitor 20303 is connected to the wiring 20306, and a second electrode is connected to the second terminal of the transistor 20301.

Note that the wiring 20304 is a signal line, the wiring 20305 is a scanning line, and the wiring 2030.
6 is a capacity line. The transistor 20301 is a switching transistor and may be a P-channel transistor or an N-channel transistor. Liquid crystal element 2
0307 is a TN (Twisted Nematic) mode as an operation mode, IPS
(In-Plane-Switching) mode, FFS (Fringe Field)
Switching mode, MVA (Multi-domain Vertical)
Alignment mode, PVA (Patterned Vertical Al)
ignition), ASM (Axial Symmetric aligned M)
micro-cell) mode, OCB (Optical Compensated Bi)
refrenceence) mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liquid)
id Crystal) or the like can be used.

A video signal and a scanning signal are input to the wiring 20304 and the wiring 20305, respectively. The video signal is an analog voltage signal, and the scanning signal is an H level or L level digital voltage signal. However, the video signal may be a current signal or a digital signal. In addition, the H level and the L level of the scanning signal may be any potential that can control on / off of the transistor 20301.

A constant power supply voltage is supplied to the capacitor line 20306. However, a pulsed signal may be supplied.

The operation of the pixel 20102 in FIG. First, when the wiring 20305 is at an H level, the transistor 20301 is turned on, and the second electrode of the liquid crystal element 20302 and the capacitor 203 are connected through the transistor 20301 in which the video signal is turned on from the wiring 20304.
03 is supplied to the second electrode. The capacitor 20303 holds a potential difference between the potential of the wiring 203076 and the potential of the video signal.

Next, when the wiring 20305 is set at the L level, the transistor 20301 is turned off and the wiring 2
0304 is electrically disconnected from the second electrode of the liquid crystal element 20302 and the second electrode of the capacitor 20303. However, since the capacitor 20303 holds a potential difference between the potential of the wiring 203076 and the potential of the video signal, the potential of the second electrode of the capacitor 20302 can be maintained at the same potential as the video signal.

In this manner, the pixel 20102 in FIG. 31A can maintain the potential of the second electrode of the liquid crystal element 20302 at the same potential as the video signal, and can maintain the transmittance of the liquid crystal element 20302 according to the video signal.

Note that although not illustrated, the capacitor 20303 is not necessarily required as long as the liquid crystal element 20302 has a capacitance component that can hold a video signal.

Note that the first electrode of the liquid crystal element 20302 may be connected to the wiring 20306 as illustrated in FIG. For example, when the liquid crystal mode of the liquid crystal element 20302 is the FFS mode, the liquid crystal element 20302 uses the structure in FIG.

Note that as shown in FIG. 32, the first electrode of the capacitor 20303 may be connected to the previous wiring 20305a. Note that when the wiring 20305a is an n-th scanning line (n is a positive integer), the wiring 20305b is an n + 1-th scanning line. Similarly, transistor 20301
a, when the pixel 20102a and the capacitor 20303a are elements in the n-th row, the transistor 20301b, the pixel 20102b, and the capacitor 20303b are elements in the n + 1-th row. In this manner, the number of wirings can be reduced by connecting the first electrode of the capacitor 20303b to the wiring 20305a in the previous row. Therefore, the pixels 2010a and 2010 in FIG.
2b can increase the aperture ratio.

Next, the liquid crystal display device illustrated in FIG. 33 is provided with a backlight unit 22601, a liquid crystal panel 22607, a layer 22608 including a first polarizer, and a layer 22609 including a second polarizer.

Note that the liquid crystal panel 22607 can be the same as that described in this embodiment. In addition, although the liquid crystal panel of this embodiment has been described with respect to an active structure in which a switching element is provided in each pixel, the liquid crystal panel in FIG. 33 may have a passive structure.

The structure of the backlight unit 22601 will be described. Backlight unit 22
601 is configured to include a diffusion plate 22602, a light guide plate 22603, a reflection plate 22604, a lamp reflector 22605, and a light source 22606. As the light source 22606, a cold cathode tube, a hot cathode tube, a light emitting diode, an inorganic EL, an organic EL, or the like is used.
06 has a function of emitting light as necessary. The lamp reflector 22605 includes a light source 226.
It has a function of efficiently guiding the fluorescence from 06 to the light guide plate 22603. The light guide plate 22603 is
It has a function of totally reflecting fluorescence and guiding light to the entire surface. The diffusion plate 22602 has a function of reducing brightness unevenness. The reflective plate 22604 has a function of reflecting and reusing light leaked downward from the light guide plate 22603 (the direction opposite to the liquid crystal panel 22607).

In addition, the liquid crystal display device of this embodiment can improve the brightness of the screen of a liquid crystal panel by arrange | positioning a prism sheet between the diffuser plate 22602 and the layer 22609 containing a 2nd polarizer.

A control circuit for adjusting the luminance of the light source 22606 is connected to the backlight unit 22601. The luminance of the light source 22606 can be adjusted by supplying a signal from the control circuit.

A layer 22609 including a second polarizer is provided between the liquid crystal panel 22607 and the backlight unit 22601, and the liquid crystal panel 2 in the direction opposite to the backlight unit 22601 is provided.
A layer 22608 including a first polarizer is also provided in 2607.

Note that the layer 22608 including the first polarizer and the layer 22609 including the second polarizer are arranged so as to be in a crossed Nicol state when the liquid crystal element of the liquid crystal panel 22607 is driven in the TN mode. In addition, the layer 22608 including the first polarizer and the layer 22609 including the second polarizer are arranged so as to be in a crossed Nicol state when the liquid crystal element of the liquid crystal panel 22607 is driven in the VA mode. In addition, the layer 22608 including the first polarizer and the layer 22 including the second polarizer.
When the liquid crystal element of the liquid crystal panel 22607 is driven in the IPS mode and the FFS mode, it may be arranged so as to be crossed Nicols or arranged so as to be parallel Nicols.

A retardation plate may be provided between both or one of the layer 22608 including the first polarizer and the layer 22609 including the second polarizer and the liquid crystal panel 22607.

As shown in FIG. 36, the slit (grating) 22610 is disposed between the layer 22609 including the second polarizer and the backlight unit 22601, so that the liquid crystal display device of this embodiment can perform three-dimensional display. It can be performed.

A slit 22610 having an opening disposed on the backlight unit side transmits light incident from the light source in a stripe shape and allows the light to enter the display device. This slit 2261
With 0, parallax can be created in both eyes of the viewer on the viewer side, and the viewer sees only the pixels for the right eye in the right eye and only the pixels for the left eye in the left eye. Therefore, the viewer can see the three-dimensional display. That is, the light given a specific viewing angle by the slit 22610 passes through pixels corresponding to the right-eye image and the left-eye image,
The right-eye image and the left-eye image are separated into different viewing angles, and three-dimensional display is performed.

When an electronic device such as a television device or a mobile phone is manufactured using the liquid crystal display device in FIG. 36, a high-function and high-quality electronic device that can perform three-dimensional display can be provided.

Next, a detailed configuration of the backlight will be described with reference to FIG. The backlight is provided in a liquid crystal display device as a backlight unit having a light source, and the light source is surrounded by a reflector so that the backlight unit efficiently scatters light.

As shown in FIG. 35A, the backlight unit 22852 can use a cold cathode tube 22801 as a light source. In addition, a lamp reflector 22832 can be provided in order to efficiently reflect light from the cold cathode tube 22801. The cold cathode tube 22801 is:
Often used for large display devices. This is due to the intensity of the luminance from the cold cathode tube. Therefore, a backlight unit having a cold cathode tube can be used for a display of a personal computer.

As shown in FIG. 35B, the backlight unit 22852 can use a light-emitting diode (LED) 22802 as a light source. For example, white light emitting diodes (W) 22802 are arranged at predetermined intervals. In addition, a lamp reflector 22832 can be provided in order to efficiently reflect light from the light emitting diode (W) 22802.

As shown in FIG. 35C, the backlight unit 22852 can use light emitting diodes (LEDs) 22803, 22804, and 22805 for each color RGB as a light source. By using the light emitting diodes (LEDs) 22803, 22804, and 22805 for each color RGB, color reproducibility can be enhanced as compared with only the light emitting diode (W) 22802 that emits white. In addition, a lamp reflector 22832 can be provided to efficiently reflect light from the light emitting diode.

Further, as shown in FIG. 35D, each color RGB light emitting diode (LE) is used as a light source.
D) When 22803, 22804, and 22805 are used, it is not necessary to make them the same number and arrangement. For example, a plurality of colors with low emission intensity (for example, green) may be arranged.

Furthermore, the light emitting diode 22802 which emits white, and the light emitting diodes of each color RGB (LE
D) 22803, 22804, and 22805 may be used in combination.

Note that in the case of having RGB light emitting diodes, when the field sequential mode is applied, color display can be performed by sequentially turning on the RGB light emitting diodes according to time.

When a light-emitting diode is used, it has high luminance and is suitable for a large display device. Further, since the color purity of each of the RGB colors is good, the color reproducibility is superior to that of the cold cathode tube, and the arrangement area can be reduced. Therefore, when the display is adapted to a small display device, the frame can be narrowed.

Further, the light source is not necessarily arranged as the backlight unit shown in FIG.
For example, when a backlight having a light emitting diode is mounted on a large display device, the light emitting diode can be disposed on the back surface of the substrate. At this time, the light emitting diodes can maintain predetermined intervals, and the light emitting diodes of the respective colors can be arranged in order. The color reproducibility can be improved by the arrangement of the light emitting diodes.

Subsequently, an example of a layer including a polarizer (also referred to as a polarizing plate or a polarizing film) is shown in FIG.
Will be described with reference to FIG.

37 includes a protective film 23001 and a substrate film 230.
02, a PVA polarizing film 23003, a substrate film 23004, an adhesive layer 23005, and a release film 23006.

The PVA polarizing film 23003 has a function of generating light only in a certain vibration direction (linearly polarized light). Specifically, the PVA polarizing film 23003 includes molecules (polarizers) in which the electron density differs greatly in the vertical and horizontal directions. The PVA polarizing film 23003 can produce linearly polarized light by aligning the directions of molecules in which the electron density is greatly different in the vertical and horizontal directions.

As an example, the PVA polarizing film 23003 is made of polyvinyl alcohol (Poly alcohol).
A film in which iodine molecules are arranged in a certain direction can be obtained by doping a polymer film of Vinyl Alcohol) with an iodine compound and pulling the PVA film in a certain direction. And the light parallel to the long axis of an iodine molecule is absorbed by the iodine molecule. In addition, a dichroic dye may be used in place of iodine for high durability use and high heat resistance use. In addition,
The dye is preferably used in liquid crystal display devices that require durability and heat resistance, such as in-vehicle LCDs and projector LCDs.

The PVA polarizing film 23003 is a film (substrate film 2300 that serves as a base material on both sides).
2 and the substrate film 3604), the reliability can be increased. Also, PVA
The polarizing film 23003 may be sandwiched between highly transparent and highly durable triacetylrose (TAC) films. In addition, a board | substrate film and a TAC film function as a protective layer of the polarizer which PVA polarizing film 23003 has.

One substrate film (substrate film 23004) has an adhesive layer 23005 attached to a glass substrate of a liquid crystal panel. Note that the pressure-sensitive adhesive layer 23005 is formed by applying a pressure-sensitive adhesive to a substrate film (substrate film 23004) on one side. The pressure-sensitive adhesive layer 23005 is provided with a release film 23005 (separate film).

The other substrate film (substrate film 23002) is provided with a protective film.

A hard coat scattering layer (anti-glare layer) may be provided on the surface of the polarizing film 23000. Since the hard coat scattering layer has fine irregularities formed on the surface by AG treatment and has an antiglare function for scattering external light, reflection of external light on the liquid crystal panel and surface reflection can be prevented.

Further, a plurality of optical thin film layers having different refractive indexes may be formed on the surface of the polarizing film 23000 (also referred to as anti-reflection treatment or AR treatment). The multilayered optical thin film layer having a plurality of refractive indexes can reduce the reflectance of the surface due to the light interference effect.

  Next, the operation of each circuit included in the liquid crystal display device will be described with reference to FIG.

FIG. 34 shows a system block diagram of the pixel portion 22705 and the driver circuit portion 22708 of the display device.

The pixel portion 22705 includes a plurality of pixels. The signal line 22712 serving as each pixel and the scanning line 2
A switching element is provided in a region intersecting with 2710. Application of a voltage for controlling the tilt of liquid crystal molecules can be controlled by the switching element. A structure in which switching elements are provided in each intersection region in this way is called an active type. The pixel portion of the display device in this embodiment is not limited to such an active type and may have a passive structure. Since the passive type has no switching element in each pixel, the process is simple.

The driver circuit portion 22708 includes a control circuit 22702, a signal line driver circuit 22703, and a scanning line driver circuit 22704. A control circuit 22702 to which the video signal 22701 is input has a function of performing gradation control in accordance with display contents of the pixel portion 22705. Therefore, the control circuit 22702 outputs the generated signal to the signal line driver circuit 22703 and the scan line driver circuit 2270.
4 When a switching element is selected via the scanning line 22710 based on the scanning line driver circuit 22704, a voltage is applied to the pixel electrode in the selected intersection region.
The value of this voltage is determined based on a signal input from the signal line driver circuit 22703 via the signal line.

Further, the control circuit 22702 generates a signal for controlling the power supplied to the lighting unit 22706, and the signal is input to the power source 22707 of the lighting unit 22706. The backlight unit described in the above embodiment can be used as the illumination unit. The illumination means includes a front light in addition to the backlight. The front light is a plate-like light unit that is mounted on the front side of the pixel portion and is composed of a light emitter and a light guide that illuminate the whole. Such illumination means can illuminate the pixel portion evenly with low power consumption.

As shown in FIG. 34B, the scan line driver circuit 22704 includes a shift register 22741,
A circuit functioning as a level shifter 22742 and a buffer 22743 is included. Signals such as a gate start pulse (GSP) and a gate clock signal (GCK) are input to the shift register 22741. Note that the scan line driver circuit of the display device in this embodiment mode is shown in FIG.
It is not limited to the configuration shown in FIG.

As shown in FIG. 34C, the signal line driver circuit 22703 includes a shift register 2273.
1, a first latch 22732, a second latch 22733, a level shifter 22734, and a circuit that functions as a buffer 22735. A circuit functioning as the buffer 22735 is a circuit having a function of amplifying a weak signal and includes an operational amplifier and the like. A signal such as a start pulse (SSP) is input to the level shifter 22734, and data (DATA) such as a video signal is input to the first latch 22732. The second latch 22733 has a latch (
LAT) signals can be temporarily stored and input to the pixel portion 22705 all at once. This is called line sequential driving. Therefore, the second latch can be omitted if the pixel performs dot sequential driving instead of line sequential driving. As described above, the signal line driver circuit of the display device in this embodiment is not limited to the structure illustrated in FIG.

Such a signal line driver circuit 22703, a scan line driver circuit 22704, and a pixel portion 22705.
Can be formed by semiconductor elements provided on the same substrate. Semiconductor elements are
A thin film transistor provided over a glass substrate can be used. In this case, a crystalline semiconductor film is preferably applied to the semiconductor element. Since the crystalline semiconductor film has high electrical characteristics, particularly mobility, a circuit included in the driver circuit portion can be formed. The signal line driver circuit 22703 and the scan line driver circuit 22704 are integrated circuits (ICs).
t) It can also be mounted on a substrate using a chip. In this case, an amorphous semiconductor film can be applied to the semiconductor element in the pixel portion.

Here, the liquid crystal display module of this embodiment will be described with reference to FIGS. 38 (A) and 38 (B).

FIG. 38A shows an example of a liquid crystal display module, which includes a TFT substrate 23100 and a counter substrate 2.
3101 is fixed by a sealant 23102, and a pixel portion 2310 including a TFT or the like between them is attached.
3 and a liquid crystal layer 23104 are provided to form a display area. The colored layer 23105 is necessary for color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. On the outer side of the TFT substrate 23100 and the counter substrate 23101, a layer 23106 including a first polarizer, a layer 23107 including a second polarizer, and a diffusion plate 2311
3 is disposed. The light source is composed of a cold cathode tube 23110 and a reflection plate 23111. The circuit board 23112 is connected to the TFT substrate 23100 by a flexible wiring board 23109, and an external circuit such as a control circuit or a power supply circuit is incorporated.

A layer 231 including a second polarizer is provided between the TFT substrate 23100 and the backlight as the light source.
07 is stacked, and the counter substrate 23101 is also provided with a layer 23106 including the first polarizer. On the other hand, the absorption axis of the layer 23107 including the second polarizer and the absorption axis of the layer 23106 including the first polarizer provided on the viewing side are arranged to be crossed Nicols.

The layer 23107 including the stacked second polarizer and the layer 231 including the stacked first polarizer
06 is bonded to the TFT substrate 23100 and the counter substrate 23101. Moreover, you may laminate | stack in the state which had the phase difference plate between the layer containing the laminated | stacked polarizer, and a board | substrate. Further, if necessary, the layer 23106 including the first polarizer on the viewing side may be subjected to an antireflection treatment.

The liquid crystal display module has TN (Twisted Nematic) mode, IPS (
In-Plane-Switching mode, FFS (Fringe Field)
Switching mode, MVA (Multi-domain Vertical)
Alignment mode, PVA (Patterned Vertical Ali)
gmnent), ASM (Axial Symmetric Aligned Mi)
cro-cell) mode, OCB (Optical Compensated Bir)
efficiency mode, FLC (Ferroelectric Liquid)
Crystal) mode, AFLC (Antiferroelectric Liquid)
d Crystal), PDLC (Polymer Dispersed Liquid)
Crystal) mode or the like can be used.

FIG. 38B is an example in which the OCB mode is applied to the liquid crystal display module of FIG. 38A, and is an FS-LCD (Field sequential-LCD). FS-
The LCD emits red light, green light and blue light in one frame period.
It is possible to perform color display by combining images using time division. Further, since each light emission is performed by a light emitting diode or a cold cathode tube, a color filter is unnecessary. Therefore, it is not necessary to arrange the color filters of the three primary colors and limit the display area of each color, and it is possible to display all three colors in any area. On the other hand, since three colors of light are emitted in one frame period, a high-speed response of the liquid crystal is required. By applying the FLC mode and the OCB mode using the FS method to the display device of this embodiment mode, a high-performance and high-quality display device or a liquid crystal television device can be completed.

The liquid crystal layer in the OCB mode has a so-called π cell structure. The π cell structure is a structure in which the pretilt angles of liquid crystal molecules are aligned in a plane-symmetric relationship with respect to the center plane between the active matrix substrate and the counter substrate. The alignment state of the π cell structure is splay alignment when no voltage is applied between the substrates, and shifts to bend alignment when a voltage is applied. This bend orientation is white. When a voltage is further applied, the bend-aligned liquid crystal molecules are aligned perpendicularly to both substrates, and light is not transmitted. In the OCB mode, high-speed response that is about 10 times faster than the conventional TN mode can be realized.

In addition, as a mode corresponding to the FS system, a ferroelectric liquid crystal (FLC: FLC) capable of high-speed operation.
HV (half-liquid) using erroelectric Liquid Crystal
V) -FLC, SS (Surface Stabilized) -FLC, etc. can also be used.

Further, by narrowing the cell gap of the liquid crystal display module, the optical response speed of the liquid crystal display module can be increased. The speed can also be increased by reducing the viscosity of the liquid crystal material. The increase in speed is more effective when the pixel pitch of the pixel area of the TN mode liquid crystal display module is 30 μm or less. In addition, the speed may be increased by using an overdrive that increases (or lowers) the voltage applied to the liquid crystal layer for a moment from the original voltage.

The liquid crystal display module in FIG. 38B is a transmissive liquid crystal display module, and a red light source 23190a, a green light source 23190b, and a blue light source 23190c are provided as light sources. The light source is provided with a control unit 23199 for controlling on / off of the red light source 23190a, the green light source 23190b, and the blue light source 23190c. Control unit 231
99 controls the light emission of each color, the light is incident on the liquid crystal, the images are synthesized using time division, and color display is performed.

Note that in this embodiment mode, description has been made using various drawings. However, the contents (or part of the contents) described in each figure may be different from the contents (or part of the contents) described in another figure. , Application, combination, or replacement can be performed freely. Furthermore, in the figures described so far,
For each part, more parts can be constructed by combining different parts.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of a case, an example of a case where it is described in detail, an example of a case where it is applied, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

[Embodiment 8]
In this embodiment, a method for driving a display device will be described. In particular, a method for driving a liquid crystal display device will be described.

First, overdrive driving will be described with reference to FIG. FIG. 39A shows the change over time of the output luminance with respect to the input voltage of the display element. The time change of the output luminance of the display element with respect to the input voltage 30121 represented by the broken line is the same as the output luminance 30123 similarly represented by the broken line. That is, the voltage for obtaining the target output luminance Lo is Vi, but when Vi is input as it is as the input voltage, it takes time corresponding to the response speed of the element to reach the target output luminance Lo. End up.

Overdrive drive is a technique for increasing the response speed. Specifically, first, Vo, which is a voltage higher than Vi, is applied to the element for a certain period of time to increase the response speed of the output luminance, approach the target output luminance Lo, and then return the input voltage to Vi. Is the method. At this time, the input voltage is represented as an input voltage 30122, and the output luminance is represented as an output luminance 30124. In the graph of the output luminance 30124, the time to reach the target luminance Lo is shorter than that of the graph of the output luminance 30123.

In FIG. 39A, the case where the output luminance changes positively with respect to the input voltage has been described. However, the present embodiment includes the case where the output luminance changes negatively with respect to the input voltage. It is out.

A circuit for realizing such driving is shown in FIGS. 39B and 39C.
Will be described with reference to FIG. First, a case where the input video signal 30131 is an analog value (may be a discrete value) and the output video signal 30132 is an analog value signal will be described with reference to FIG. The overdrive circuit shown in FIG. 39B includes an encoding circuit 30101, a frame memory 30102, a correction circuit 30103, and a DA conversion circuit 3.
0104.

The input video signal 30131 is first input to the encoding circuit 30101 and encoded.
That is, the analog signal is converted into a digital signal having an appropriate number of bits. Thereafter, the converted digital signal is input to the frame memory 30102 and the correction circuit 30103, respectively. The video signal of the previous frame held in the frame memory 30102 is also input to the correction circuit 30103 at the same time. Then, the correction circuit 30103 outputs a corrected video signal according to a numerical table prepared in advance from the video signal of the frame and the video signal of the previous frame. At this time, an output switching signal 30133 may be input to the correction circuit 30103 so that the corrected video signal and the video signal of the frame can be switched and output. Next, the corrected video signal or the video signal of the frame is input to the DA conversion circuit 30104. Then, an output video signal 30132 which is an analog signal having a value according to the corrected video signal or the video signal of the frame is output. In this way, overdrive driving can be realized.

Next, a case where the input video signal 30131 is a signal that takes a digital value and the output video signal 30132 is also a signal that takes a digital value will be described with reference to FIG. The overdrive circuit shown in FIG. 39C includes a frame memory 30112 and a correction circuit 30.
113.

The input video signal 30131 is a digital signal and is first input to the frame memory 30112 and the correction circuit 30113, respectively. The video signal of the previous frame held in the frame memory 30112 is also input to the correction circuit 30113 at the same time. Then, the correction circuit 30113 outputs a corrected video signal according to a numerical table prepared in advance from the video signal of the frame and the video signal of the previous frame. At this time, an output switching signal 30133 may be input to the correction circuit 30113 so that the corrected video signal and the video signal of the frame can be switched and output. In this way, overdrive driving can be realized.

Note that the overdrive circuit in this embodiment includes a case where the input video signal 30131 is an analog signal and the output video signal 30132 is a digital signal. At this time, the DA converter circuit 30104 may be omitted from the circuit shown in FIG. Also,
The overdrive circuit in this embodiment includes a case where the input video signal 30131 is a digital signal and the output video signal 30132 is an analog signal. In this case, FIG.
The encoding circuit 30101 may be omitted from the circuit shown in FIG.

Next, driving for manipulating the potential of the common line will be described with reference to FIG. FIG. 40A shows a plurality of pixels when one common line is arranged for one scanning line in a display device using a display element having a capacitive property such as a liquid crystal element. It is a figure showing a circuit. A pixel circuit illustrated in FIG. 40A includes a transistor 30201, an auxiliary capacitor 30202,
A display element 30203, a video signal line 30204, a scanning line 30205, a common line 30206,
It has.

The gate electrode of the transistor 30201 is electrically connected to the scan line 30205, one of the source and drain electrodes of the transistor 30201 is electrically connected to the video signal line 30204, and the other of the source and drain electrodes of the transistor 30201 is One electrode of the auxiliary capacitor 30202 and one electrode of the display element 30203 are electrically connected.
The other electrode of the auxiliary capacitor 30202 is electrically connected to the common line 30206.

First, since the transistor 30201 is turned on in the pixel selected by the scanning line 30205, a voltage corresponding to the video signal is applied to the display element 30203 and the auxiliary capacitor 30202 through the video signal line 30204, respectively. At this time, when the video signal is to display the lowest gradation for all the pixels connected to the common line 30206, or the highest gradation for all the pixels connected to the common line 30206. Is displayed, it is not necessary to write a video signal to each pixel via the video signal line 30204. Instead of writing a video signal through the video signal line 30204, the voltage applied to the display element 30203 can be changed by moving the potential of the common line 30206.

Next, FIG. 40B shows a display device using a display element having a capacitive property such as a liquid crystal element when two common lines are arranged for one scanning line. It is a figure showing a plurality of pixel circuits. A pixel circuit illustrated in FIG. 40B includes a transistor 30211, an auxiliary capacitor 30212, a display element 30213, a video signal line 30214, a scanning line 30215, and a first circuit.
Common line 30216 and second common line 30217 are provided.

The gate electrode of the transistor 30211 is electrically connected to the scan line 30215, one of the source and drain electrodes of the transistor 30211 is electrically connected to the video signal line 30214, and the other of the source and drain electrodes of the transistor 30211 is One electrode of the auxiliary capacitor 30212 and one electrode of the display element 30213 are electrically connected.
In addition, the other electrode of the auxiliary capacitor 30212 is electrically connected to the first common line 30216.
In the pixel adjacent to the pixel, the other electrode of the auxiliary capacitor 30212 is electrically connected to the second common line 30217.

In the pixel circuit illustrated in FIG. 40B, since the number of pixels electrically connected to one common line is small, the first common line 30216 is used instead of writing a video signal through the video signal line 30214. Alternatively, the display element 3021 is moved by moving the potential of the second common line 30217.
The frequency at which the voltage applied to 3 can be changed is significantly increased. Further, source inversion driving or dot inversion driving is possible. By source inversion driving or dot inversion driving, flicker can be suppressed while improving the reliability of the element.

Next, the scanning backlight will be described with reference to FIG. (A) in FIG.
It is a figure which shows the scanning backlight which arranged the cold cathode tube in parallel. A scanning backlight shown in FIG. 41A includes a diffusion plate 30301 and N cold-cathode tubes 30302-1 to 30302 -N.
And comprising. N cold cathode tubes 30302-1 to 30302 -N are connected to the diffusion plate 30301.
The N cold-cathode tubes 30302-1 to 30302 -N can be scanned while changing their luminance.

A change in the luminance of each cold cathode tube during scanning will be described with reference to FIG. First,
The luminance of the cold cathode tube 30302-1 is changed for a certain time. After that, the cold cathode tube 3
The luminance of the cold cathode fluorescent lamp 30302-2 arranged next to 0302-1 is changed by the same time. In this way, the luminance is changed in order from the cold cathode fluorescent lamps 30302-1 to 30302-N. In FIG. 41C, the luminance to be changed for a certain time is smaller than the original luminance, but may be larger than the original luminance. Also, cold cathode fluorescent lamps 30302-1 to 303
Although scanning to 02-N is performed, scanning from the cold cathode fluorescent lamps 30302-N to 30302-1 may be performed in the reverse direction.

By driving as shown in FIG. 41, the average luminance of the backlight can be reduced.
Therefore, the power consumption of the backlight, which accounts for most of the power consumption of the liquid crystal display device, can be reduced.

An LED may be used as the light source of the scanning backlight. The scanning backlight in that case is as shown in FIG. A scanning backlight shown in FIG. 41B includes a diffusion plate 30311, light sources 30312-1 to 30312-N in which LEDs are juxtaposed,
Is provided. When an LED is used as the light source of the scanning backlight, there is an advantage that the backlight can be made thin and light. Further, there is an advantage that the color reproduction range can be expanded. Further, L arranged in parallel with each of the light sources 30312-1 to 30312-N in which LEDs are juxtaposed.
Since the ED can also be scanned in the same manner, it can be a point scanning backlight. If the point scanning type is adopted, the image quality of the moving image can be further improved.

Note that even when an LED is used as the light source of the backlight, it can be driven with varying luminance as shown in FIG.

Next, high frequency driving will be described with reference to FIG. FIG. 42A is a diagram when one image and one intermediate image are displayed in one frame period 30400. 304
01 is an image of the frame, 30402 is an intermediate image of the frame, 30403 is an image of the next frame, and 30404 is an intermediate image of the next frame.

Note that the intermediate image 30402 of the frame may be an image created based on the video signals of the frame and the next frame. The intermediate image 30402 of the frame is
An image created from the image 30401 of the frame may be used. Further, the intermediate image 30402 of the frame may be a black image. By doing so, the image quality of the moving image of the hold type display device can be improved. In the case where one image and one intermediate image are displayed in one frame period 30400, there is an advantage that consistency with the frame rate of the video signal can be easily obtained and the image processing circuit is not complicated.

FIG. 42B shows a period in which two one-frame periods 30400 are continuous (two-frame periods).
FIG. 6 is a diagram when one image and two intermediate images are displayed. 30411 is an image of the frame, 30412 is an intermediate image of the frame, 30413 is an intermediate image of the next frame,
30414 is an image of the next frame.

Note that the intermediate image 30412 of the frame and the intermediate image 30413 of the next frame are
It may be an image created based on the video signal of the frame, the next frame, and the frame after another. Further, the intermediate image 30412 of the frame and the intermediate image 30413 of the next frame may be black images. When one image and two intermediate images are displayed in two frame periods, there is an advantage that the image quality of the moving image can be effectively improved without significantly increasing the operating frequency of the peripheral drive circuit.

Note that in this embodiment mode, description has been made using various drawings. However, the contents (or part of the contents) described in each figure may be different from the contents (or part of the contents) described in another figure. , Application, combination, or replacement can be performed freely. Furthermore, in the figures described so far,
For each part, more parts can be constructed by combining different parts.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of a case, an example of a case where it is described in detail, an example of a case where it is applied, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

[Embodiment 9]
In this embodiment, a semiconductor device to which the present invention can be applied is a thin film transistor (TFT).
A method for manufacturing a semiconductor device in the case where the element is included as an element will be described with reference to drawings.

FIG. 43 is a diagram showing an example of the structure and manufacturing process of a TFT that can be included in a semiconductor device to which the present invention can be applied. FIG. 43A illustrates an example of a structure of a TFT that can be included in a semiconductor device to which the present invention can be applied. 43B to 43G are diagrams illustrating an example of a manufacturing process of a TFT that can be included in a semiconductor device to which the present invention can be applied.

Note that the structure and manufacturing process of a TFT which can be included in a semiconductor device to which the present invention can be applied are not limited to those shown in FIG. 43, and various structures and manufacturing processes can be used.

First, referring to FIG. 43A, a semiconductor device to which the present invention can be applied can have T.
An example of the structure of the FT will be described. FIG. 43A is a cross-sectional view of a TFT having a plurality of different structures. Here, in FIG. 43A, a plurality of TFTs having different structures are shown side by side, but this is an expression for explaining a structure of a TFT that can be included in a semiconductor device to which the invention can be applied. T which a semiconductor device to which the invention can be applied can have
The FTs need not actually be juxtaposed as shown in FIG. 43A, but can be created as needed.

Next, characteristics of each layer constituting a TFT that can be included in a semiconductor device to which the present invention can be applied will be described.

As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, polyethylene terephthalate (PET), polyethylene naphthalate (
It is also possible to use a substrate made of a flexible synthetic resin such as a plastic represented by PEN) or polyethersulfone (PES) or acrylic. By using a flexible substrate, a semiconductor device that can be bent can be manufactured.
Moreover, since there is no big restriction | limiting in the area of a board | substrate and the shape of a board | substrate, if it is a board | substrate which has flexibility,
If the substrate 110111 is, for example, one side having a length of 1 meter or more and a rectangular shape, productivity can be significantly improved. Such an advantage is a great advantage compared to the case of using a circular silicon substrate.

The insulating film 110112 functions as a base film. An alkali metal or alkaline earth metal such as Na is provided from the substrate 110111 in order to prevent adverse effects on the characteristics of the semiconductor element. As the insulating film 110112, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y) It is possible to provide a single layer structure or a laminated structure thereof. For example, in the case where the insulating film 110112 is provided with a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. Insulating film 11
In the case where 0112 is provided in a three-layer structure, a silicon oxynitride film is provided as a first insulating film, a silicon nitride oxide film is provided as a second insulating film, and a silicon oxynitride film is provided as a third insulating film Good.

Note that a conductive film may be provided under the insulating film 110112. The conductive film may function as a common electrode.

The semiconductor films 110113, 110114, and 110115 can be formed using an amorphous semiconductor or a semi-amorphous semiconductor (SAS). Alternatively, a polycrystalline semiconductor film may be used. SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. A crystal region of 0.5 to 20 nm can be observed in at least a part of the film, and when silicon is a main component, the Raman spectrum is shifted to a lower wave number side than 520 cm ^−1. Yes. In X-ray diffraction, diffraction peaks of (111) and (220) that are derived from the silicon crystal lattice are observed. At least 1 atomic% or more of hydrogen or halogen is contained as a neutralizing agent for dangling bonds. The SAS is formed by glow discharge decomposition (plasma CVD) of a silicide gas. Silicide gases include SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , S
It is possible to use iHCl ₃ , SiCl ₄ , SiF ₄ or the like. Alternatively, GeF ₄
May be mixed. This silicide gas may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. The dilution rate is in the range of 2 to 1000 times. The pressure ranges from approximately 0.1 Pa to 133 Pa, and the power supply frequency ranges from 1 MHz to 120 MHz.
, Preferably 13 MHz to 60 MHz. The substrate heating temperature may be 300 ° C. or less. As an impurity element in the film, impurities of atmospheric components such as oxygen, nitrogen, and carbon are desirably 1 × 10 ²⁰ cm ⁻¹ or less, and in particular, the oxygen concentration is 5 × 10 ¹⁹ / cm ³ or less, preferably 1 × 10
¹⁹ / cm ³ or less. Here, an amorphous semiconductor film is formed from a material (eg, Si _x Ge _1-x ) containing silicon (Si) as a main component using a known means (sputtering method, LPCVD method, plasma CVD method, or the like). The amorphous semiconductor film is crystallized by a known crystallization method such as a laser crystallization method, a thermal crystallization method using an RTA or furnace annealing furnace, or a thermal crystallization method using a metal element that promotes crystallization.

The insulating film 110116 is an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y). A single-layer structure or a stacked structure thereof can be used.

The gate electrode 110117 can have a single-layer conductive film or a stacked structure of two-layer or three-layer conductive films. As a material of the gate electrode 110117, a known conductive film can be used. For example, a simple film of an element such as tantalum (Ta), titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon (Si), or a nitride film of the element (typically Tantalum nitride film, tungsten nitride film, titanium nitride film), or
Alloy film combining the above elements (typically Mo-W alloy, Mo-Ta alloy), or
Silicide film of the element (typically tungsten silicide film, titanium silicide film)
Etc. can be used. Note that the single film, nitride film, alloy film, silicide film, and the like described above may be used as a single layer or may be stacked.

The insulating film 110118 is formed by known means (sputtering method, plasma CVD method, or the like) using silicon oxide (SiOx), silicon nitride (SiNx), or silicon oxynitride (SiOxNy) (x> y).
, Silicon nitride oxide (SiNxOy) (x> y) or other insulating film or DLC containing oxygen or nitrogen
A single-layer structure of a film containing carbon such as (diamond-like carbon) or a stacked structure thereof can be used.

The insulating film 110119 is formed of siloxane resin, silicon oxide (SiOx), silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy)
(X> y) or other insulating film containing oxygen or nitrogen or DLC (diamond-like carbon)
Or a single layer or a laminated structure made of an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, or acrylic. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond.
Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Note that in the semiconductor device applicable to the present invention, the insulating film 110119 can be provided directly so as to cover the gate electrode 110117 without providing the insulating film 110118.

The conductive film 110123 is made of Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au,
A single film of an element such as Mn, a nitride film of the element, an alloy film combining the elements, a silicide film of the element, or the like can be used. For example, as an alloy containing a plurality of the elements, an Al alloy containing C and Ti, an Al alloy containing Ni, an Al alloy containing C and Ni, an Al alloy containing C and Mn, and the like can be used. Further, in the case of providing a stacked structure, a structure in which Al is sandwiched between Mo or Ti can be employed. By carrying out like this, the tolerance with respect to the heat | fever and chemical reaction of Al can be improved.

Next, referring to a cross-sectional view of a TFT having a plurality of different structures shown in FIG.
The characteristics of each structure will be described.

Reference numeral 110101 denotes a single drain TFT, which can be manufactured by a simple method, and thus has an advantage that a manufacturing cost is low and a yield is high. Here, the semiconductor film 110113,
110115 has different impurity concentrations, the semiconductor film 110113 is used as a channel region, and the semiconductor film 110115 is used as a source and drain region. Thus, the resistivity of the semiconductor film can be controlled by controlling the amount of impurities. In addition, the semiconductor film and the conductive film 110
The electrical connection state with 123 can be brought close to ohmic connection. Note that as a method of separately forming semiconductor films having different amounts of impurities, a method of doping impurities into the semiconductor film using the gate electrode 110117 as a mask can be used.

Reference numeral 110102 denotes a TFT having a taper angle of a certain level or more on the gate electrode 110117, which can be manufactured by a simple method, and thus has an advantage that the manufacturing cost is low and the yield is high. Here, the semiconductor films 110113, 110114, and 110115 have different impurity concentrations, the semiconductor film 110113 is a channel region, the semiconductor film 110114 is a lightly doped drain (LDD) region, and the semiconductor film 11011.
5 is used as a source and drain region. Thus, the resistivity of the semiconductor film can be controlled by controlling the amount of impurities. Further, the electrical connection state between the semiconductor film and the conductive film 110123 can be made close to ohmic connection. Since it has an LDD region, T
It is difficult for a high electric field to be applied to the inside of the FT, and deterioration of the element due to hot carriers can be suppressed. Note that as a method of separately forming semiconductor films having different amounts of impurities, the gate electrode 110 is used.
A method of doping impurities into the semiconductor film using 117 as a mask can be used. 1
In 10102, since the gate electrode 110117 has a certain taper angle or more, the concentration of the impurity doped into the semiconductor film through the gate electrode 110117 can be given a gradient, and the LDD region can be easily formed. Can be formed.

Reference numeral 110103 denotes a TFT in which the gate electrode 110117 is composed of at least two layers, and the lower gate electrode is longer than the upper gate electrode. In this specification,
The shape of the upper gate electrode and the lower gate electrode is called a hat shape type. Since the shape of the gate electrode 110117 is a hat shape, an LDD region can be formed without adding a photomask. Note that a structure in which the LDD region overlaps with the gate electrode 110117, such as 110103, is particularly a GOLD structure (Gate Over).
called rapped LDD). Note that the following method may be used as a method of making the shape of the gate electrode 110117 into a hat shape type.

First, when the gate electrode 110117 is patterned, the lower gate electrode and the upper gate electrode are etched by dry etching so that the side surfaces are inclined (tapered). Subsequently, the upper-layer gate electrode is processed to be nearly vertical by anisotropic etching. Thereby, a gate electrode having a hat-shaped cross section is formed. After that, by doping the impurity element twice, a semiconductor film 110113 used as a channel region, a semiconductor film 110114 used as an LDD region, and a semiconductor film 110115 used as a source and drain electrodes are formed.

Note that the LDD region overlapping the gate electrode 110117 is a Lov region, and the gate electrode 1
An LDD region that does not overlap with 10117 will be referred to as a Loff region. Where Lo
The ff region has a high effect of suppressing the off-current value, but has a low effect of relaxing the electric field near the drain and preventing deterioration of the on-current value due to hot carriers. On the other hand, the Lov region relaxes the electric field near the drain and is effective in preventing deterioration of the on-current value, but has a low effect of suppressing the off-current value.
Therefore, it is preferable to manufacture a TFT having a structure corresponding to required characteristics for each of various circuits. For example, when a semiconductor device applicable to the present invention is used as a display device, a pixel TFT
In order to suppress the off-current value, it is preferable to use a TFT having a Loff region. On the other hand, as the TFT in the peripheral circuit, it is preferable to use a TFT having a Lov region in order to relax the electric field in the vicinity of the drain and prevent deterioration of the on-current value.

110104 is in contact with the side surface of the gate electrode 110117, and the sidewall 11012.
1 is a TFT having 1; By including the sidewall 110121, a region overlapping with the sidewall 110121 can be an LDD region.

110105 performs LDD (Lof) by doping a semiconductor film using a mask.
f) A TFT in which a region is formed. By so doing, the LDD region can be formed reliably, and the off-current value of the TFT can be reduced.

110106 performs LDD (Lo) by doping a semiconductor film using a mask.
v) A TFT in which a region is formed. By doing so, the LDD region can be formed reliably, the electric field in the vicinity of the drain of the TFT can be relaxed, and the deterioration of the on-current value can be reduced.

Next, an example of a manufacturing process of a TFT that can be included in a semiconductor device to which the present invention can be applied will be described with reference to FIGS.
Note that the structure and manufacturing process of a TFT which can be included in a semiconductor device to which the present invention can be applied are not limited to those shown in FIG. 43, and various structures and manufacturing processes can be used.

In this embodiment mode, on the surface of the substrate 110111, on the surface of the insulating film 110112,
Oxidation or nitridation is performed using plasma treatment on the surface of the semiconductor film 110113, the surface of 110114, the surface of 110115, the surface of the insulating film 110116, the surface of the insulating film 110118, or the surface of the insulating film 110119. Thus, the semiconductor film or the insulating film can be oxidized or nitrided. In this manner, by oxidizing or nitriding the semiconductor film or the insulating film using plasma treatment, the surface of the semiconductor film or the insulating film is modified,
Since a denser insulating film can be formed as compared with an insulating film formed by a CVD method or a sputtering method, defects such as pinholes can be suppressed and characteristics of the semiconductor device can be improved.

First, the surface of the substrate 110111 is cleaned using hydrofluoric acid (HF), alkali, or pure water. As the substrate 110111, a glass substrate such as barium borosilicate glass or alumino borosilicate glass, a quartz substrate, a ceramic substrate, a metal substrate including stainless steel, or the like can be used. In addition, it is also possible to use a substrate made of a plastic such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), or polyethersulfone (PES), or a flexible synthetic resin such as acrylic. is there. Note that here, a case where a glass substrate is used as the substrate 110111 is described.

Here, an oxide film or a nitride film may be formed on the surface of the substrate 110111 by performing plasma treatment on the surface of the substrate 110111 to oxidize or nitride the surface of the substrate 110111 (FIG. 43B). . Hereinafter, an insulating film such as an oxide film or a nitride film formed by performing plasma processing on the surface is also referred to as a plasma processing insulating film. In FIG. 43B, the insulating film 131 is a plasma processing insulating film. In general, when a semiconductor element such as a thin film transistor is provided on a substrate such as glass or plastic, an impurity element such as alkali metal or alkaline earth metal such as Na contained in glass or plastic is mixed in the semiconductor element. Contamination may affect the characteristics of the semiconductor element. However, by nitriding the surface of a substrate made of glass or plastic, it is possible to prevent an impurity element such as an alkali metal or an alkaline earth metal such as Na contained in the substrate from entering the semiconductor element.

Note that when the surface is oxidized by plasma treatment, an oxygen atmosphere (for example, oxygen (O
₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) atmosphere, oxygen and hydrogen (H ₂ ) and a rare gas atmosphere, or dinitrogen monoxide and a rare gas atmosphere Plasma treatment is performed in the lower part. On the other hand, in the case of nitriding a semiconductor film by plasma treatment, in a nitrogen atmosphere (for example, an atmosphere containing nitrogen (N ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed in an atmosphere of nitrogen, hydrogen, and a rare gas, or NH ₃ and a rare gas. As the rare gas, for example, Ar can be used. Alternatively, a gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, Ar is contained in the plasma processing insulating film.

In the plasma treatment, the electron density is 1 × 10 ¹¹ cm ⁻ in the gas atmosphere.
^{3 to} 1 × 10 ¹³ cm ⁻³ and the plasma electron temperature is 0.5 ev to 1.5 e.
It is preferable to carry out at V or less. Since the electron density of the plasma is high and the electron temperature in the vicinity of the object to be processed is low, damage to the object to be processed by the plasma can be prevented. Further, since the electron density of plasma is as high as 1 × 10 ¹¹ cm ⁻³ or higher, an oxide or a nitride film formed by oxidizing or nitriding an irradiation object using plasma treatment is
Compared with a film formed by a CVD method, a sputtering method, or the like, a film having excellent uniformity in film thickness and the like and a dense film can be formed. Alternatively, because the plasma electron temperature is as low as 1 eV or less,
Oxidation or nitridation can be performed at a lower temperature than conventional plasma treatment or thermal oxidation. For example, even if the plasma treatment is performed at a temperature that is 100 degrees or more lower than the strain point temperature of the glass substrate, the oxidation or nitriding treatment can be sufficiently performed. Note that a high frequency such as a microwave (2.45 GHz) can be used as a frequency for forming plasma. In addition,
Unless otherwise specified, the plasma treatment is performed using the above conditions.

Note that FIG. 43B illustrates the case where a plasma treatment insulating film is formed by performing plasma treatment on the surface of the substrate 110111; however, in this embodiment mode, the substrate 1101 is formed.
11 also includes a case where a plasma treatment insulating film is not formed on the surface of 11.

Note that in FIGS. 43C to 43G, a plasma treatment insulating film formed by plasma treatment of the surface of an object to be processed is not illustrated, but in this embodiment mode, a substrate 1 is used.
10111, insulating film 110112, semiconductor films 110113, 110114, 110115
Including the case where a plasma treatment insulating film formed by performing plasma treatment exists on the surface of the insulating film 110116, the insulating film 110118, or the insulating film 110119.

Next, a known means (sputtering method, LPCVD method, plasma CVD method) is formed on the substrate 110111.
The insulating film 110112 is formed using a method (FIG. 43C). As the insulating film 110112, silicon oxide (SiOx) or silicon oxynitride (SiOxNy) (x> y) can be used.

Here, the plasma treatment insulating film may be formed on the surface of the insulating film 110112 by performing plasma treatment on the surface of the insulating film 110112 and oxidizing or nitriding the insulating film 110112. By oxidizing the surface of the insulating film 110112, the surface of the insulating film 110112 can be modified to obtain a dense film with few defects such as pinholes. Insulating film 11
By oxidizing the surface of 0112, a plasma processing insulating film with a low N atom content can be formed. Therefore, when a semiconductor film is provided on the plasma processing insulating film, the plasma processing insulating film and the semiconductor film interface characteristics are improves. The plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. Note that the plasma treatment can be similarly performed under the above-described conditions.

Next, island-shaped semiconductor films 110113 and 110114 are formed over the insulating film 110112 (FIG. 43D). The island-shaped semiconductor films 110113 and 110114 are formed of the insulating film 110112.
On top of the silicon (using sputtering method, LPCVD method, plasma CVD method, etc.)
An amorphous semiconductor film is formed using a material containing Si) as a main component (for example, Si _x Ge _1-x or the like), the amorphous semiconductor film is crystallized, and the semiconductor film is selectively etched. Can be provided. The crystallization of the amorphous semiconductor film may be performed by laser crystallization, thermal crystallization using an RTA or furnace annealing furnace, thermal crystallization using a metal element that promotes crystallization, or a combination of these methods. It can carry out by the well-known crystallization method. Note that here, the end portion of the island-shaped semiconductor film is provided in a shape close to a right angle (θ = 85 to 100 °).
Alternatively, the semiconductor film 110114 serving as a low-concentration drain region may be formed by doping impurities using a mask.

Here, plasma treatment is performed on the surfaces of the semiconductor films 110113 and 110114, and the surfaces of the semiconductor films 110113 and 110114 are oxidized or nitrided, whereby the semiconductor film 110
A plasma treatment insulating film may be formed on the surfaces of 113 and 110114. For example, when Si is used for the semiconductor films 110113 and 110114, silicon oxide (SiOx) or silicon nitride (SiNx) is formed as the plasma processing insulating film. Alternatively, the semiconductor films 110113 and 110114 may be oxidized by plasma treatment and then nitrided by performing plasma treatment again. In this case, silicon oxide (SiOx) is formed in contact with the semiconductor films 110113 and 110114, and silicon nitride oxide (SiNxOy) is formed on the surface of the silicon oxide.
(X> y) is formed. Note that in the case where the semiconductor film is oxidized by plasma treatment, in an oxygen atmosphere (for example, an atmosphere of oxygen (O ₂ ) and a rare gas (including at least one of He, Ne, Ar, Kr, and Xe), or Plasma treatment is performed with oxygen and hydrogen (H ₂ ) in a rare gas atmosphere or dinitrogen monoxide and a rare gas atmosphere. On the other hand, in the case where a semiconductor film is nitrided by plasma treatment, a nitrogen atmosphere (for example, nitrogen (N ₂ ) and a rare gas (He, Ne, Ar, K)
plasma treatment is performed in an atmosphere (including at least one of r and Xe), an atmosphere of nitrogen, hydrogen, and a rare gas, or an atmosphere of NH 3 and a rare gas. As the rare gas, for example, Ar can be used. A gas in which Ar and Kr are mixed may be used. Therefore, the plasma processing insulating film includes a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, Ar is contained in the plasma processing insulating film.

Next, an insulating film 110116 is formed (FIG. 43E). The insulating film 110116 is formed using a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) using silicon oxide (SiO 2
x), a single layer structure of an insulating film containing oxygen or nitrogen, such as silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or a laminate thereof It can be provided in a structure. Note that in the case where a plasma treatment insulating film is formed on the surfaces of the semiconductor films 110113 and 110114 by performing plasma treatment on the surfaces of the semiconductor films 110113 and 110114, the plasma treatment insulating film can be used as the insulating film 110116. .

Here, the plasma treatment insulating film may be formed on the surface of the insulating film 110116 by performing plasma treatment on the surface of the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116. Note that the plasma treatment insulating film is formed of a rare gas (He, N) used in the plasma treatment.
e, Ar, Kr, and Xe). Further, the plasma treatment can be similarly performed under the above-described conditions.

Alternatively, the insulating film 110116 may be oxidized by performing plasma treatment once in an oxygen atmosphere and then nitrided by performing plasma treatment again in a nitrogen atmosphere. In this manner, by performing plasma treatment on the insulating film 110116 and oxidizing or nitriding the surface of the insulating film 110116, the surface of the insulating film 110116 can be modified and a dense film can be formed. An insulating film obtained by performing plasma treatment is denser and has fewer defects such as pinholes than an insulating film formed by a CVD method or a sputtering method, so that characteristics of the thin film transistor can be improved.

Next, the gate electrode 110117 is formed (FIG. 43F). Gate electrode 110117
Can be formed using known means (sputtering, LPCVD, plasma CVD, etc.).

In 110101, the semiconductor film 110115 used as the source and drain regions can be formed by performing impurity doping after forming the gate electrode 110117.

In 110102, impurity doping is performed after the gate electrode 110117 is formed, so that a semiconductor film 110115 used as an LDD region and a semiconductor film 110115 used as a semiconductor film source and drain region can be formed.

In 110103, impurity doping is performed after the gate electrode 110117 is formed, so that a semiconductor film 110115 used as an LDD region and a semiconductor film 110115 used as a semiconductor film source and drain region can be formed.

110104, sidewalls 11012 are formed on the side surfaces of the gate electrode 110117.
1101 used as an LDD region by performing impurity doping after forming 1
4 and the semiconductor film 110115 used as a semiconductor film source and drain region can be formed.

Note that the sidewall 110121 is formed of silicon oxide (SiOx) or silicon nitride (SiN).
x) can be used. As a method of forming the side wall 110121 on the side surface of the gate electrode 110117, for example, after forming the gate electrode 110117, a silicon oxide (SiOx) or silicon nitride (SiNx) film is formed by a known method, and then anisotropic. A method of etching a silicon oxide (SiOx) or silicon nitride (SiNx) film by etching can be used. By doing so, a silicon oxide (SiOx) or silicon nitride (SiNx) film can be left only on the side surface of the gate electrode 110117.
Sidewalls 110121 can be formed on the side surfaces of 117.

In 110105, a mask 110122 is formed so as to cover the gate electrode 110117, and then impurity doping is performed, whereby the LDD (Loff) region is used.
10114 and a semiconductor film 110115 used as a semiconductor film source and drain region can be formed.

In 110106, by performing impurity doping after forming the gate electrode 110117, 110114 used as an LDD (Lov) region and a semiconductor film 110115 used as a semiconductor source and drain region can be formed.

Next, an insulating film 110118 is formed (FIG. 43G). The insulating film 110118 is formed by known means (sputtering method, plasma CVD method, or the like) using silicon oxide (SiOx) or silicon nitride (
SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy)
(X> y) or other insulating film containing oxygen or nitrogen or DLC (diamond-like carbon)
A single layer structure of a film containing carbon, such as a laminated structure of these films can be provided.

Here, a plasma treatment insulating film may be formed on the surface of the insulating film 110118 by performing plasma treatment on the surface of the insulating film 110118 and oxidizing or nitriding the surface of the insulating film 110118. Note that the plasma treatment insulating film is formed of a rare gas (He, N) used in the plasma treatment.
e, Ar, Kr, and Xe). Further, the plasma treatment can be similarly performed under the above-described conditions.

Next, an insulating film 110119 is formed. The insulating film 110119 is formed by a known means (sputtering method, plasma CVD method, or the like) using silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) ( In addition to an insulating film having oxygen or nitrogen such as x> y) or a film containing carbon such as DLC (diamond-like carbon), epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, etc. A single layer structure of an organic material or a siloxane resin, or a stacked structure thereof can be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group can also be used as a substituent. Or
As a substituent, an organic group containing at least hydrogen and a fluoro group may be used. The plasma processing insulating film contains a rare gas (including at least one of He, Ne, Ar, Kr, and Xe) used for the plasma processing. For example, when Ar is used, the plasma processing insulating film is used. Ar is contained in the film.

In the case where an organic material such as polyimide, polyamide, polyvinylphenol, benzocyclobutene, or acrylic, or a siloxane resin is used as the insulating film 110119, the insulating film 11011 is used.
The surface of the insulating film can be modified by oxidizing or nitriding the surface of 9 by plasma treatment. By modifying the surface, the strength of the insulating film 110119 is improved, and it is possible to reduce physical damage such as generation of cracks at the time of opening formation and the like and film reduction at the time of etching. In addition, when the surface of the insulating film 110119 is modified, adhesion with the conductive film is improved when the conductive film 110123 is formed over the insulating film 110119. For example, in the case where siloxane resin is used as the insulating film 110119 and nitridation is performed using plasma treatment, the surface of the siloxane resin is nitrided, so that a plasma treatment insulating film containing nitrogen or a rare gas is formed, and the physical strength is increased. improves.

Next, contact holes are formed in the insulating film 110119, the insulating film 110118, and the insulating film 110116 in order to form the conductive film 110123 electrically connected to the semiconductor film 110115. Note that the shape of the contact hole may be tapered. Thus, the coverage of the conductive film 110123 can be improved.

Note that in this embodiment mode, description has been made using various drawings. However, the contents (or part of the contents) described in each figure may be different from the contents (or part of the contents) described in another figure. , Application, combination, or replacement can be performed freely. Furthermore, in the figures described so far,
For each part, more parts can be constructed by combining different parts.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of a case, an example of a case where it is described in detail, an example of a case where it is applied, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

[Embodiment 10]
In this embodiment, an example of a display device, particularly a case where optical handling is performed will be described.

A rear projection display device 130100 shown in FIGS. 44A and 44B includes a projector unit 130111, a mirror 130112, and a screen panel 130101.
In addition, a speaker 130102 and operation switches 130104 may be provided. The projector unit 130111 includes a housing 130 of the rear projection display device 130100.
The projection light which is arrange | positioned under 110 and projects an image | video based on a video signal is mirror 13011.
Project toward 2 The rear projection display device 130100 includes a screen panel 130101.
It is the structure which displays the image | video projected from the back.

On the other hand, FIG. 45 shows a front projection display device 130200. Front projection display device 1
30200 includes a projector unit 130111 and a projection optical system 130201. The front projection optical system 130200 is configured to project an image on a screen or the like disposed on the front surface.

The rear projection display device 130100 shown in FIG. 44 and the front projection display device 13 shown in FIG.
A configuration of the projector unit 130111 applied to 0200 will be described below.

FIG. 46 shows a configuration example of the projector unit 130111. The projector unit 130111 includes a light source unit 130301 and a modulation unit 130304.
It has. The light source unit 130301 includes a light source optical system 1 including lenses.
30303 and a light source lamp 130302. The light source lamp 130302 is housed in the housing so that stray light does not diffuse. As the light source lamp 130302, for example, a high-pressure mercury lamp or a xenon lamp capable of emitting a large amount of light is used. The light source optical system 130303 is configured by appropriately providing an optical lens, a film having a polarization function, a film for adjusting a phase difference, an IR film, and the like. The light source unit 130301 is disposed so that the emitted light is incident on the modulation unit 130304. Modulation unit 1
Reference numeral 30304 denotes a plurality of display panels 130308, a color filter, a dichroic mirror 130305, a total reflection mirror 130306, a prism 130309, and a projection optical system 130.
310 is provided. Light emitted from the light source unit 130301 is separated into a plurality of optical paths by the dichroic mirror 130305.

Each optical path is provided with a color filter that transmits light of a predetermined wavelength or wavelength band, and a display panel 130308. A transmissive display panel 130308 modulates transmitted light based on a video signal. The light of each color transmitted through the display panel 130308 is reflected by the prism 13.
0309 is entered, and an image is displayed on the screen through the projection optical system 130310. A Fresnel lens may be disposed between the mirror and the screen. The projection light projected by the projector unit 130111 and reflected by the mirror is converted into substantially parallel light by the Fresnel lens and projected onto the screen.

A projector unit 130111 shown in FIG. 47 includes a reflective display panel 130407.
, 130408, 130409 are shown.

A projector unit 130111 shown in FIG. 47 includes a light source unit 130301 and a modulation unit 130400. The light source unit 130301 may have the same configuration as that in FIG. The light from the light source unit 130301 is emitted from the dichroic mirror 1304.
The light beams are divided into a plurality of optical paths by 01, 130402, and a total reflection mirror 130403, and enter the polarization beam splitters 130404, 130405, and 130406. The polarizing beam splitters 130404, 130405, and 130406 are provided corresponding to the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. The reflective display panels 130407, 130408, and 130409 modulate reflected light based on the video signal. The light beams of the respective colors reflected by the reflective display panels 130407, 130408, and 130409 are combined by being incident on the prism 130309 and projected through the projection optical system 13041.

Light emitted from the light source unit 130301 is transmitted through the dichroic mirror 130401 only in the red wavelength region and reflects in the green and blue wavelength regions. Further, the dichroic mirror 130402 reflects only light in the green wavelength region. The light in the red wavelength region that has passed through the dichroic mirror 130401 is reflected by the total reflection mirror 130403 and is incident on the polarization beam splitter 130404. The light in the blue wavelength region is incident on the polarization beam splitter 130405, and the green wavelength The light in the region is polarized beam splitter 1304
Incident at 06. Polarizing beam splitters 130404, 130405, 130406
It has a function of separating incident light into P-polarized light and S-polarized light, and has a function of transmitting only P-polarized light. The reflective display panels 130407, 130408, and 130409 polarize incident light based on the video signal.

Only S-polarized light corresponding to each color is incident on the reflective display panels 130407, 130408, and 130409 corresponding to the respective colors. Note that the reflective display panels 130407 and 130408 are provided.
, 130409 may be a liquid crystal panel. At this time, the liquid crystal panel operates in an electric field controlled birefringence mode (ECB). The liquid crystal molecules are vertically aligned with a certain angle with respect to the substrate. Accordingly, the display molecules of the reflective display panels 130407, 130408, and 130409 are oriented so that they are reflected without changing the polarization state of incident light when the pixel is in the off state. Further, when the pixel is in the ON state, the orientation state of the display molecules changes, and the polarization state of incident light changes.

The projector unit 130111 shown in FIG. 47 can be applied to the rear projection display device 130100 shown in FIG. 44 and the front projection display device 130200 shown in FIG.

The projector unit shown in FIG. 48 has a single-plate configuration. A projector unit 130111 shown in FIG. 48A includes a light source unit 130301 and a display panel 130.
507, a projection optical system 130511, and a phase difference plate 130504 are provided. Projection optical system 13
0511 is composed of one or a plurality of lenses. The display panel 130507 may be provided with a color filter.

FIG. 48B shows a projector unit 13 that operates in a field sequential manner.
The configuration of 0111 is shown. The field sequential method is a method in which light of each color such as red, green, and blue is temporally shifted and sequentially incident on a display panel to perform color display without a color filter. In particular, when combined with a display panel having a high response speed with respect to input signal changes, a high-definition image can be displayed. In FIG. 48B, the light source unit 13
A rotary color filter plate 130505 provided with a plurality of color filters such as red, green, and blue is provided between 0301 and the display panel 130508.

A projector unit 130111 shown in FIG. 48C is a color display method.
The structure of the color separation method using a macro lens is shown. In this method, a microlens array 130506 is provided on the light incident side of the display panel 130509, and color display is realized by illuminating light of each color from each direction. The projector unit 130111 that employs this method has a feature that light from the light source unit 130301 can be effectively used because light loss due to the color filter is small. 48 (
The projector unit 130111 shown in (C) includes a dichroic mirror 130501, a dichroic mirror 130502, and a red light dichroic mirror 130503 so as to illuminate the display panel 130509 with light of each color from each direction.

Note that in this embodiment mode, description has been made using various drawings. However, the contents (or part of the contents) described in each figure may be different from the contents (or part of the contents) described in another figure. , Application, combination, or replacement can be performed freely. Furthermore, in the figures described so far,
For each part, more parts can be constructed by combining different parts.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of a case, an example of a case where it is described in detail, an example of a case where it is applied, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

[Embodiment 11]
In this embodiment, an example of an electronic apparatus according to the present invention will be described.

FIG. 49 shows a display panel module in which a display panel 900101 and a circuit board 900111 are combined. A display panel 900101 includes a pixel portion 900102, a scan line driver circuit 900103, and a signal line driver circuit 900104. On the circuit board 900111, for example, a control circuit 900112 and a signal dividing circuit 900113 are formed. The display panel 900101 and the circuit board 900111 are connected by a connection wiring 900114. An FPC or the like can be used for the connection wiring.

In the display panel 900101, a pixel portion 900102 and a part of peripheral driver circuits (a driver circuit having a low operating frequency among a plurality of driver circuits) are integrally formed using a TFT over a substrate, and a part of the peripheral driver circuits (a plurality of peripheral driver circuits) Drive circuit having a high operating frequency) is formed on the IC chip,
The IC chip is displayed on a display panel 900101 using COG (Chip On Glass) or the like.
May be implemented. Thus, the area of the circuit board 900111 can be reduced, and a small display device can be obtained. Alternatively, the IC chip is TAB (Tape Auto).
Bonding) or a printed circuit board may be used for mounting on the display panel 900101. Thus, the area of the display panel 900101 can be reduced, so that a display device with a small frame size can be obtained.

For example, in order to reduce power consumption, a pixel portion is formed using a TFT on a glass substrate,
All peripheral drive circuits may be formed on an IC chip, and the IC chip may be mounted on the display panel by COG or TAB.

A television receiver can be completed with the display panel module shown in FIG. FIG. 50 is a block diagram illustrating a main configuration of a television receiver. Tuner 90020
1 receives a video signal and an audio signal. The video signal includes a video signal amplifying circuit 900202, a video signal processing circuit 900203 for converting a signal output from the video signal amplifying circuit 900202 into a color signal corresponding to each color of red, green, and blue, and a driving circuit for the video signal. Is processed by a control circuit 900212 for conversion to the input specification of Control circuit 90021
2 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 900213 may be provided on the signal line side, and an input digital signal may be divided into m pieces (m is a positive integer) and supplied.

Of the signals received by the tuner 900201, the audio signal is the audio signal amplifier circuit 90020.
5 and the output is supplied to the speaker 900207 via the audio signal processing circuit 900206. The control circuit 900208 receives the receiving station (reception frequency) and volume control information from the input unit 9000020, and sends a signal to the tuner 900201 and the audio signal processing circuit 900206.

FIG. 51A illustrates a television receiver in which a display panel module different from that in FIG. 50 is incorporated. In FIG. 51A, a display screen 900302 housed in a housing 900301 is formed using a display panel module. Note that the speaker 900303,
An operation switch 900304 or the like may be provided as appropriate.

FIG. 51B shows a television receiver that can carry only a display wirelessly. A housing 900312 includes a battery and a signal receiver, and the display portion 900313 and the speaker portion 900317 are driven by the battery. The battery can be repeatedly charged with a charger 900310. The charger 900310 can transmit and receive a video signal, and can transmit the video signal to a signal receiver of the display. The housing 900312 is controlled by operation keys 900316. Alternatively, FIG.
The apparatus illustrated in FIG. 1B operates the operation key 900316 to operate the housing 90031.
2 may be a video / audio two-way communication device capable of sending a signal to the charger 900310 from 2. Alternatively, the housing 90031 is operated by operating the operation key 900316.
2 may be a general-purpose remote control device capable of controlling communication of other electronic devices by sending a signal to charger 900310 from 2 and allowing other electronic devices to receive signals that can be transmitted by charger 900310. . The present invention can be applied to the display portion 900313.

FIG. 52A illustrates a module in which a display panel 900401 and a printed wiring board 900402 are combined. A display panel 900401 includes a pixel portion 900403 provided with a plurality of pixels, a first scan line driver circuit 900404, and a second scan line driver circuit 9004.
And a signal line driver circuit 900406 for supplying a video signal to the selected pixel.

A printed wiring board 900402 includes a controller 900407, a central processing unit (CP
U) 9000040, memory 900409, power supply circuit 900410, audio processing circuit 9004
11 and a transmission / reception circuit 900412 and the like. Printed wiring board 900402
The display panel 900401 is connected by a flexible wiring board (FPC) 900413. The printed wiring board 900413 is provided with a storage capacitor, a buffer circuit, etc.
A configuration may be adopted in which noise is generated in the power supply voltage or signal and the rise time of the signal is prevented from increasing. In addition, a controller 9000040, an audio processing circuit 9000041, and a memory 9000040
, CPU 940408, power supply circuit 900410, etc. are connected to COG (Chip On Gla
It can also be mounted on the display panel 900401 using the ss) method. The scale of the printed wiring board 900402 can be reduced by the COG method.

Interface (I / F) unit 90041 provided on the printed circuit board 900402
Various control signals are input and output via 4. Further, an antenna port 900415 for transmitting and receiving signals to and from the antenna is provided on the printed wiring board 900402.

FIG. 52 (B) shows a block diagram of the module shown in FIG. 52 (A). This module includes a VRAM 900416, a DRAM 9000041, a flash memory 900418, and the like as the memory 900409. The VRAM 900416 stores image data to be displayed on the panel, the DRAM 900417 stores image data or audio data, and the flash memory stores various programs.

The power supply circuit 900410 includes a display panel 900401, a controller 900407, CP
U900408, audio processing circuit 9000041, memory 900409, transmission / reception circuit 9004
Power to operate 12 is supplied. Depending on the specifications of the panel, the power supply circuit 900410
May be provided with a current source.

The CPU 900408 has a control signal generation circuit 900420, a decoder 900421, a register 900422, an arithmetic circuit 9000042, a RAM 900394, an interface 900419 for the CPU 900408, and the like. Various signals input to the CPU 900408 via the interface 900419 are temporarily held in the register 9000042 and then input to the arithmetic circuit 9000042, the decoder 900421, and the like. Arithmetic circuit 900
In 423, an operation is performed based on the input signal, and a place to send various commands is designated. On the other hand, the signal input to the decoder 900421 is decoded, and the control signal generation circuit 900420 is decoded.
Is input. Based on the input signal, the control signal generation circuit 900420 generates a signal including various instructions, and a location designated by the arithmetic circuit 9000042, specifically, the memory 90
0409, transmission / reception circuit 900412, audio processing circuit 900411, controller 9004
Send to 07 etc.

The memory 9000040, the transmission / reception circuit 9000041, the sound processing circuit 9000041, and the controller 900407 operate according to received commands. The operation will be briefly described below.

A signal input from the input unit 9000042 is sent to the CPU 900408 mounted on the printed wiring board 900402 via the interface 9000041. The control signal generation circuit 900420 is input means 90042 such as a pointing device or a keyboard.
5, the image data stored in the VRAM 900416 is converted into a predetermined format and sent to the controller 900407.

The controller 900407 performs data processing on a signal including image data sent from the CPU 900408 in accordance with the panel specification, and supplies the processed signal to the display panel 900401.
In addition, the controller 900407 includes a power supply voltage input from the power supply circuit 900410 and a CP.
Based on various signals input from U900408, an Hsync signal, a Vsync signal, a clock signal CLK, an AC voltage (AC Cont), and a switching signal L / R are generated and supplied to the display panel 900401.

In the transmission / reception circuit 9000041, a signal transmitted / received as a radio wave in the antenna 9000042 is processed. Specifically, an isolator, a band-pass filter, a VCO (Vol.
tag Controlled Oscillator), LPF (Low Pass)
A high frequency circuit such as a filter), a coupler, or a balun may be included. Transmission / reception circuit 9
Of the signals transmitted and received in 00412, a signal including audio information is CPU900408.
Is sent to the audio processing circuit 900411 in accordance with the command from

A signal including audio information transmitted in accordance with a command of the CPU 900408 is demodulated into an audio signal in the audio processing circuit 900411 and is transmitted to the speaker 9000042. The audio signal sent from the microphone 9000042 is modulated in the audio processing circuit 9000041 and sent to the transmission / reception circuit 9000041 in accordance with a command from the CPU 900408.

A controller 900407, a CPU 900408, a power supply circuit 900410, an audio processing circuit 90000411, and a memory 9000040 can be mounted as a package of this embodiment.

Needless to say, this embodiment is not limited to a television receiver, and various uses as a display medium of a particularly large area such as a personal computer monitor, an information display board at a railway station or airport, an advertisement display board in a street, etc. Can be applied to.

  Next, a configuration example of the mobile phone according to the present invention will be described with reference to FIG.

The display panel 900501 is incorporated in a housing 900530 so as to be detachable. The shape and size of the housing 900530 can be changed as appropriate in accordance with the size of the display panel 900501. A housing 900530 to which the display panel 900501 is fixed is fitted into the printed circuit board 900531 and assembled as a module.

The display panel 900501 is connected to the printed circuit board 900531 through the FPC 900531. A printed circuit board 900531 includes a speaker 900532 and a microphone 9
A signal processing circuit 9000053 including a transmission / reception circuit 900534, a CPU, a controller, and the like is formed. Such a module is combined with the input means 900566 and the battery 900577 and stored in the housing 9000053. Display panel 90050
One pixel portion is arranged so as to be visible from an opening window formed in the housing 9000053.

In the display panel 900501, a pixel portion and some peripheral driver circuits (a driver circuit having a low operating frequency among a plurality of driver circuits) are integrally formed using a TFT over a substrate, and some peripheral driver circuits (a plurality of driver circuits) A driving circuit having a high operating frequency among the circuits) may be formed over an IC chip, and the IC chip may be mounted on the display panel 900501 using COG (Chip On Glass). Alternatively, the IC chip may be connected to the glass substrate using TAB (Tape Auto Bonding) or a printed board. With such a structure, the power consumption of the display device can be reduced, and the usage time by one charge of the mobile phone can be extended.
In addition, the cost of the mobile phone can be reduced.

54 includes an operation switch 9000060, a microphone 90, and the like.
A main body (A) 900601 provided with 0605 and the like, a display panel (A) 900608,
A main body (B) 9 provided with a display panel (B) 900609, a speaker 9000060, etc.
00602 is connected by a hinge 900610 so that it can be opened and closed. Display panel (A) 90
0608 and the display panel (B) 900609 together with the circuit board 900607 are the main body (B) 9
It is housed in a case 900603 of 00602. The pixel portions of the display panel (A) 900608 and the display panel (B) 900609 are arranged so as to be visible from an opening window formed in the housing 900603.

The display panel (A) 900608 and the display panel (B) 900609 are composed of the mobile phone 9
Specifications such as the number of pixels can be appropriately set in accordance with the function of 0600. For example, the display panel (A) 900608 can be combined as a main screen and the display panel (B) 900609 can be combined as a sub-screen.

The mobile phone according to the present embodiment can be transformed into various modes depending on the function and application. For example, a mobile phone with a camera may be provided by incorporating an image sensor at the hinge 900610. In addition, even when the operation switches 9000060, the display panel (A) 900068, and the display panel (B) 900609 are housed in one housing, the above-described effects can be obtained. Further, even when the configuration of the present embodiment is applied to an information display terminal having a plurality of display units, the same effect can be obtained.

The present invention can be applied to various electronic devices. Specifically, it can be applied to a display portion of an electronic device. Such electronic devices include video cameras, digital cameras, goggles-type displays, navigation systems, sound playback devices (car audio, audio components, etc.), computers, game devices, portable information terminals (mobile computers, mobile phones, portable games) Or an image reproducing apparatus (specifically, an apparatus having a display capable of reproducing a recording medium such as a digital versatile disc (DVD) and displaying the image). .

FIG. 55A shows a display which includes a housing 900711, a support base 900712, a display portion 900713, and the like.

FIG. 55B shows a camera, which includes a main body 900721, a display portion 900722, and an image receiving portion 900.
723, operation key 900724, external connection port 900725, shutter 900726
Etc.

FIG. 55C illustrates a computer, which includes a main body 900731, a housing 900732, and a display portion 9.
00733, a keyboard 900734, an external connection port 900735, a pointing device 900736, and the like.

FIG. 55D illustrates a mobile computer, which includes a main body 900741 and a display portion 900742.
, Switch 900743, operation key 900744, infrared port 9000074 and the like.

FIG. 55E shows a portable image reproducing device (for example, a DVD reproducing device) provided with a recording medium.
A main body 900751, a housing 900722, a display portion A90073, and a display portion B900.
754, a recording medium (DVD or the like) reading unit 900755, operation keys 900756, a speaker unit 900777, and the like. The display portion A90073 can mainly display image information, and the display portion B900743 can mainly display character information.

FIG. 55F shows a goggle type display which includes a main body 900761 and a display portion 90076.
2, including an earphone 900763 and a support portion 900764.

FIG. 55G shows a portable game machine, which includes a housing 900771, a display portion 900772, a speaker portion 900773, operation keys 900774, a storage medium insertion portion 900775, and the like. A portable game machine in which the display device of the present invention is used for the display portion 900772 can express bright colors.

FIG. 55H shows a digital camera with a television receiving function, which includes a main body 900781, a display portion 900782, operation keys 900783, speakers 900784, and a shutter 90078.
5, an image receiving unit 9000078, an antenna 9000078, and the like.

As shown in FIGS. 55A to 55E, an electronic device according to the present invention has a display portion for displaying some information. In addition, the electronic device according to the present invention has a liquid crystal display device having a wide viewing angle and a lower manufacturing cost than the conventional one.

  Next, application examples of the semiconductor device according to the present invention will be described.

FIG. 56 shows an example in which the semiconductor device according to the present invention is provided so as to be integrated with a building. FIG.
6 is a casing 900810, a display portion 900811, and a remote control device 900812 that is an operation portion.
, Speaker portion 9000081 and the like. The semiconductor device according to the present invention is integrated with a building as a wall-hanging type, and can be installed without requiring a large installation space.

FIG. 57 shows another example in which the semiconductor device according to the present invention is provided integrally with a building. The display panel 900901 is integrally attached to the unit bath 900902, so that the bather can view the display panel 900901. Display panel 90090
1 has a function that can be used as an advertisement or entertainment means by displaying information as a bather operates.

Note that the semiconductor device according to the present invention can be installed not only on the side wall of the unit bus 900902 shown in FIG. For example, it may be integrated with part of the mirror surface or the bathtub itself. At this time, the shape of the display panel 900901 may be adapted to the shape of a mirror surface or a bathtub.

FIG. 58 shows another example in which the semiconductor device according to the present invention is provided so as to be integrated with a building. The display panel 901002 is attached so as to be curved according to the curved surface of the columnar body 901001. Here, the columnar body 901001 is described as a utility pole.

A display panel 901002 shown in FIG. 58 is provided at a position higher than the human viewpoint.
By installing the display panel 901002 on a building that is repeatedly forested outdoors such as an electric pole, an advertisement can be made to an unspecified number of viewers. Here, the display panel 90100
2 can easily display the same image by an external control, and can easily switch the image instantly, so that highly efficient information display and advertising effect can be expected. Further, it can be said that providing a self-luminous display element in the display panel 901002 is useful as a display medium with high visibility even at night. In addition, the display panel 90 can be installed on the utility pole.
It is easy to secure 1002 power supply means. Further, in the event of an emergency such as the occurrence of a disaster, it can also be a means for quickly and accurately transmitting information to the victims.

Note that as the display panel 901002, for example, a display panel which displays an image by providing a switching element such as an organic transistor on a film-like substrate and driving the display element can be used.

In this embodiment, a wall, a columnar body, and a unit bus are taken as an example of a building, but this embodiment is not limited to this, and the semiconductor device according to the present invention can be installed in various buildings. .

  Next, an example in which the semiconductor device according to the present invention is provided so as to be integrated with a moving body is described.

FIG. 59 is a diagram showing an example in which the semiconductor device according to the present invention is integrated with an automobile. A display panel 901102 is attached integrally with a vehicle body 901101 of an automobile, and can display on-demand information on the operation of the vehicle body and information input from inside and outside the vehicle body. Moreover, you may have a navigation function.

Note that the semiconductor device according to the present invention can be installed not only in the vehicle body 901101 shown in FIG. 59 but also in various places. For example, it may be integrated with a glass window, a door, a handle, a shift lever, a seat, a room mirror, and the like. At this time, the display panel 901102
The shape may be adapted to the shape of the object to be installed.

FIG. 60 is a diagram showing an example in which the semiconductor device according to the present invention is provided integrally with a train car.

FIG. 60A is a view showing an example in which a display panel 901202 is provided on the glass of a door 901201 of a train car. Compared to conventional paper advertisements, there is an advantage that labor costs required for advertisement switching are not incurred. Further, the display panel 901202 can instantaneously switch an image displayed on the display unit by an external signal.
For example, the image on the display panel can be switched for each time period when the customer class of passengers on the train changes, and a more effective advertising effect can be expected.

FIG. 60B shows a glass window 901203 in addition to the glass of the door 901201 of the train car.
FIG. 5 is a diagram illustrating an example in which a display panel 901202 is provided on a ceiling 901204.
As described above, since the semiconductor device according to the present invention can be easily installed in a place where it has been difficult to install conventionally, an effective advertising effect can be obtained. In addition, since the semiconductor device according to the present invention can instantaneously switch the image displayed on the display unit by an external signal, the cost and time at the time of advertisement switching can be reduced, and a more flexible advertisement Operation and information transmission.

Note that the semiconductor device according to the present invention includes the door 901201 and the glass window 901 shown in FIG.
203 and the ceiling 901204 can be installed in various places. For example, it may be integrated with a strap, a seat, a rail, a floor or the like. At this time, the display panel 9
The shape of 01202 may be adapted to the shape of the object to be installed.

FIG. 61 is a diagram showing an example in which the semiconductor device according to the present invention is integrated with a passenger airplane.

FIG. 61A shows a display panel 90130 on a ceiling 901301 above the seat of a passenger airplane.
It is the figure shown about the shape at the time of use when 2 was provided. The display panel 901302 is
A ceiling 901301 and a hinge part 901303 are attached integrally, and the passenger can view the display panel 901302 by the expansion and contraction of the hinge part 901303. A display panel 901302 has a function of displaying information when operated by a passenger and being used as an advertisement or an entertainment means. In addition, as shown in FIG.
By storing in 301, the safety at the time of takeoff and landing can be considered. In addition, by turning on the display element of the display panel in an emergency, it can be used as an information transmission means and a guide light.

Note that the semiconductor device according to the present invention can be installed not only in the ceiling 901301 shown in FIG. For example, it may be integrated with a seat seat, a seat table, an armrest, a window and the like. In addition, a large display panel that can be viewed simultaneously by a large number of people may be installed on the wall of the aircraft. At this time, the shape of the display panel 901302 may be adapted to the shape of the object to be installed.

In this embodiment, examples of the moving body include a train car body, an automobile body, and an airplane body. However, the present invention is not limited to this, and motorcycles, automobiles (including automobiles, buses, etc.) are not limited thereto.
It can be installed on various things such as trains (including monorails, railways, etc.) and ships. Since the semiconductor device according to the present invention can instantaneously switch the display of the display panel in the moving body by an external signal, the moving body can be mounted by installing the semiconductor device according to the present invention in the moving body. It can be used for applications such as an advertisement display board for an unspecified number of customers and an information display board at the time of disaster.

Note that in this embodiment mode, description has been made using various drawings. However, the contents (or part of the contents) described in each figure may be different from the contents (or part of the contents) described in another figure. , Application, combination, or replacement can be performed freely. Furthermore, in the figures described so far,
For each part, more parts can be constructed by combining different parts.

Similarly, the contents (may be a part) described in each drawing of this embodiment are applied, combined, or replaced with the contents (may be a part) described in the figure of another embodiment. Can be done freely. Further, in the drawings of this embodiment mode, more drawings can be formed by combining each portion with a portion of another embodiment.

Note that the present embodiment is an example in which the contents (may be part) described in other embodiments are embodied, an example in which the content is slightly modified, an example in which a part is changed, and an improvement. An example of a case, an example of a case where it is described in detail, an example of a case where it is applied, an example of a related part, and the like are shown. Therefore, the contents described in other embodiments can be freely applied to, combined with, or replaced with this embodiment.

In this example, an example in which a liquid crystal display device is actually manufactured using the structure of Embodiment Mode 1 is described with reference to FIGS. 14A to 14B and FIGS. 15A to 15D. 16 (A) to 16
(C), FIG. 17 (A) to FIG. 17 (C), and FIG. However, the basic configuration is not limited to the configuration described in the first embodiment, but the configuration of the second embodiment, the configuration of the third embodiment, the configuration of the fourth embodiment, the configuration of the fifth embodiment, and the sixth embodiment. It is possible to complete the present embodiment by using each part of the configuration.

That is, the bottom gate TFT described in the second embodiment, the structure in which the pixel electrode described in the third embodiment is directly connected to the island-shaped semiconductor film, the electrode connection structure described in the fourth embodiment, and the fifth embodiment. Needless to say, the pixel electrode shape, the color filter described in Embodiment Mode 6, and the like can be combined with the present embodiment as necessary.

FIG. 14A is a top view of the liquid crystal display device of this embodiment, and FIG. 14B is a cross-sectional view.
This embodiment is an example of a method for manufacturing a liquid crystal display device having the structure described in Embodiment 1. Therefore, the common electrode (corresponding to the conductive film 115 in FIG. 1) and the pixel electrode (pixel electrode 11 in FIG. 1).
3 and 114) is improved. Openings in the pixel electrode (groove 11 in FIG.
7), the optimum value varies depending on the distance between the pixel electrode and the common electrode, so that the size, width and interval of the opening can be freely arranged. And
The gradient of the electric field applied between the electrodes can be controlled. For example, the electric field in the direction parallel to the substrate can be easily increased. That is, in a display device using liquid crystal, liquid crystal molecules (so-called homogeneous alignment) aligned in parallel with the substrate can be controlled in a direction parallel to the substrate. Become.

First, as illustrated in FIG. 15A, a light-transmitting conductive film 801 is formed over a substrate 800. The substrate 800 is a glass substrate, a quartz substrate, a substrate formed of an insulator such as alumina,
It is a plastic substrate, a silicon substrate, or a metal plate having heat resistance that can withstand the processing temperature of the subsequent process. The substrate 100 may be a substrate in which an insulating film such as silicon oxide or silicon nitride is formed on the surface of a metal such as stainless steel or a semiconductor substrate. When a plastic substrate is used as the substrate 800, a substrate having a relatively high glass transition point such as PC (polycarbonate), PES (polyethersulfone), PET (polyethylene terephthalate), or PEN (polyethylene naphthalate) should be used. preferable.

The conductive film 801 is formed of, for example, indium tin oxide (Indium Tin Oxid).
e (ITO)) film, indium tin oxide film containing Si element, indium oxide
It is a film using a material (also referred to as “IZO (Indium Zinc Oxide)” in this specification) formed using a target mixed with 20 wt% zinc oxide (ZnO).

Next, an insulating film 802 is formed as a base film over the conductive film 801 and the substrate 800. The insulating film 802 is formed by stacking a silicon oxide film on a silicon nitride film, for example.
For example, a silicon oxide film containing nitrogen or a silicon nitride film containing oxygen may be used.

Here, a silicon nitride film may be formed on the surface of the insulating film 802 by performing nitriding treatment with high-density plasma on the surface of the insulating film 802 including a silicon oxide film, a silicon oxide film containing nitrogen, or the like.

The high-density plasma is generated by using, for example, a microwave of 2.45 GHz, and has an electron density of 1 × 10 ¹¹ to 1 × 10 ¹³ / cm ³ , an electron temperature of 2 eV or less, and an ion energy of 5 eV or less. And Such high-density plasma has low kinetic energy of active species, and is less damaged by plasma than conventional plasma treatment, and can form a film with few defects. The distance from the antenna that generates the microwave to the insulating film 802 is 20 to 80 mm, preferably 20 to 60 mm.

The surface of the insulating film 802 is subjected to the above high-density plasma treatment in a nitrogen atmosphere, for example, an atmosphere containing nitrogen and a rare gas, an atmosphere containing nitrogen, hydrogen, and a rare gas, or an atmosphere containing ammonia and a rare gas. Can be nitrided.

Since the silicon nitride film can suppress diffusion of impurities from the substrate 800 and can be formed extremely thin by the high-density plasma treatment, the influence of stress on the semiconductor film formed thereon can be reduced.

Next, as illustrated in FIG. 15B, a crystalline semiconductor film (eg, a polycrystalline silicon film) is formed as the semiconductor film 803 over the insulating film 802. As a method for forming a crystalline semiconductor film, a method in which a crystalline semiconductor film is directly formed over the insulating film 802 and a method in which an amorphous semiconductor film is formed over the insulating film 802 and then crystallized can be given.

As a method for crystallizing an amorphous semiconductor film, a method of irradiating a laser beam, a method of heating and crystallizing an element that promotes crystallization of a semiconductor film (for example, a metal element such as nickel), or A method of irradiating a semiconductor film with a laser beam after heating and crystallizing using an element that promotes crystallization of the semiconductor film can be used. Needless to say, a method of thermally crystallizing an amorphous semiconductor film without using the element can also be used. However, the substrate is limited to a substrate that can withstand high temperatures such as a quartz substrate and a silicon wafer.

In the case of using laser irradiation, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. Laser beams that can be used here are gas lasers such as Ar laser, Kr laser, and excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ),
YAlO _3, GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄
, YAlO ₃ , GdVO ₄ and Nd, Yb, Cr, Ti, Ho, Er,
Oscillation from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser with one or more of Tm and Ta added as medium Can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. At this time, the energy density of the laser is 0.
. About 01-100 MW / cm < ² > (preferably 0.1-10 MW / cm < ² >) is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃
, GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO
₃ and GdVO ₄ , Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as dopants
Lasers, Ar ion lasers, or Ti: sapphire lasers with one or more of them added as a medium can be made to oscillate continuously, by performing Q-switch operation, mode synchronization, etc. It is also possible to cause pulse oscillation at an oscillation frequency of 10 MHz or more. When a laser beam is oscillated at an oscillation frequency of 10 MHz or more,
The semiconductor film is irradiated with the next pulse after the semiconductor film is melted by the laser and solidified. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

When ceramic (polycrystal) is used as the medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

Since the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of whether it is single crystal or polycrystal, there is a certain limit to the improvement in laser output by increasing the concentration. However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, it is possible to greatly improve the output.

Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. In addition, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, a linear beam having a short length of 1 mm or less and a long length of several mm to several m can be easily obtained. . Further, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the longitudinal direction.

By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing is required up to both ends of the linear beam, it is necessary to arrange a slit at both ends to shield the energy attenuating portion.

When a semiconductor film is annealed using a linear beam having a uniform intensity obtained in this manner and an electronic device is manufactured using this semiconductor film, the characteristics of the electronic device are good and uniform.

As a method of crystallizing by heating using an element that promotes crystallization of an amorphous semiconductor film, a metal element that promotes crystallization is added to the amorphous semiconductor film (also called an amorphous silicon film). By performing heat treatment, the amorphous semiconductor film is crystallized starting from the added region.

Alternatively, the amorphous semiconductor film can be crystallized by irradiation with strong light instead of heat treatment. In this case, any one of infrared light, visible light, and ultraviolet light or a combination thereof can be used. Typically, a halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressure Light emitted from a sodium lamp or a high-pressure mercury lamp is used. Lamp light source is 1-60 seconds, preferably 30-
Turn on for 60 seconds and repeat it 1 to 10 times, preferably 2 to 6 times. The emission intensity of the lamp light source is arbitrary, but the semiconductor film is instantaneously heated to about 600 to 1000 ° C. Note that if necessary, heat treatment for releasing hydrogen contained in the amorphous semiconductor film having an amorphous structure may be performed before irradiation with strong light. Further, crystallization may be performed by performing both heat treatment and irradiation with strong light.

In order to increase the crystallization rate of the crystalline semiconductor film (ratio of the crystalline component in the entire volume of the film) after the heat treatment and repair defects remaining in the crystal grains, the crystalline semiconductor film is irradiated with air or air. Irradiation may be performed in an oxygen atmosphere. As the laser light, those described above can be used.

Further, it is necessary to remove the added element from the crystalline semiconductor film, and the method will be described below.

First, by treating the surface of the crystalline semiconductor film with an ozone-containing aqueous solution (typically ozone water), a barrier layer made of an oxide film (called chemical oxide) is formed on the surface of the crystalline semiconductor film to a thickness of 1 nm to 10 nm. It will be formed. The barrier layer functions as an etching stopper when only the gettering layer is selectively removed in a later step.

Next, a gettering layer containing a rare gas element is formed as a gettering site on the barrier layer. Here, a semiconductor film containing a rare gas element is formed as a gettering layer by a CVD method or a sputtering method. When forming the gettering layer, the sputtering conditions are adjusted as appropriate so that a rare gas element is added to the gettering layer. As a noble gas element,
One or more selected from helium (He), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe) are used.

Note that when a source gas containing phosphorus, which is an impurity element, is used, or when a gettering layer is formed using a target containing phosphorus, gettering is performed using the Coulomb force of phosphorus in addition to gettering by a rare gas element. It can be performed.
In addition, since the metal element (for example, nickel) tends to move to a region having a high oxygen concentration during gettering, the oxygen concentration contained in the gettering layer is, for example, 5 × 10 ¹⁸ cm.
^-3 or more is desirable.

Next, the crystalline semiconductor film, the barrier layer, and the gettering layer are subjected to heat treatment (for example, heat treatment or intense light irradiation) to perform gettering of a metal element (for example, nickel),
The metal element in the crystalline semiconductor film is reduced in concentration or removed.

Next, a known etching method is performed using the barrier layer as an etching stopper, and only the gettering layer is selectively removed. Thereafter, the barrier layer made of an oxide film is removed by, for example, an etchant containing hydrofluoric acid.

Here, impurity ions may be doped in consideration of threshold characteristics of a manufactured TFT.

Next, a photoresist film (not shown) is applied onto the semiconductor film 803 by a coating method, and this photoresist film is exposed and developed. The coating method is a spin coating method, a spray method, a screen printing method, a paint method, or the like. Thereby, a resist is formed over the semiconductor film 803. Next, the semiconductor film 803 is etched using this resist as a mask. Thus, an island-shaped semiconductor film 872 on which a thin film transistor is formed over the insulating film 802.
, 873, 874 are formed.

Next, after the surfaces of the island-shaped semiconductor films 872 to 874 are washed with a hydrofluoric acid-containing etchant or the like, a gate insulating film 804 is formed with a thickness of 10 nm to 200 nm on the island-shaped semiconductor films 872 to 874. The gate insulating film 804 is formed using an insulating film containing silicon as a main component, for example, a silicon oxide film, a silicon nitride film, a silicon oxide film containing nitrogen, a silicon nitride film containing oxygen, or the like. Further, it may be a single layer or a laminated film. Note that a gate insulating film 804 is also formed over the insulating film 802.

After forming the gate insulating film 804, the gate electrodes 865, 866, 867, 868, and the electrode 8
69, and impurity regions 807a, 807b, 808a, 808b, 809a,
809b, 810a, 810b, 813a, 813b, 813c, 814a, 814b,
814c, 814d, channel formation regions 895, 896, 897 (897a, 897b)
Is formed (see FIG. 15C).

The gate electrode 865 of the TFT 827 includes a lower layer gate electrode 805 a and an upper layer gate electrode 80.
6a. The gate electrode 866 of the TFT 829 has a lower layer gate electrode 805b and an upper layer gate electrode 806b. The gate electrode 867 of the TFT 825 has a lower layer gate electrode 805c and an upper layer gate electrode 806c, and the gate electrode 868 has a lower layer gate electrode 805d and an upper layer gate electrode 806d.

  The electrode 869 includes a lower layer electrode 861 and an upper layer electrode 862.

Each of the impurity regions 807a and 807b is a source region or a drain region of the TFT 827, and the impurity regions 808a and 808b are low-concentration impurity regions of the TFT 827. A channel formation region 895 is located between the impurity regions 808a and 808b.

Each of the impurity regions 809a and 809b is a source region or a drain region of the TFT 829, and the impurity regions 810a and 810b are low-concentration impurity regions of the TFT 829. A channel formation region 896 is located between the impurity regions 810a and 810b.

Each of the impurity regions 813a and 813c is a source region or a drain region of the TFT 825, and the impurity region 813 is formed in the same process as each of the impurity regions 813a and 813c. The impurity regions 814a, 814b, 814c, and 814d are formed of TF
This is a low concentration impurity region of T825. A channel formation region 897a is provided between the impurity regions 814a and 814b, and a channel formation region 897b is provided between the impurity regions 814c and 814d.
Is located.

In this embodiment, the impurity regions 809a to 809b, 810a to 810b, 813a to
813c and 814a to 814d are n-type impurity regions, and an impurity element imparting n-type conductivity,
For example, phosphorus (P) and arsenic (As) are included. Impurity regions 809a to 809b, 813
a to 813c are also high-concentration impurity regions, and have higher impurity concentrations than the impurity regions 810a to 810b and 814a to 814d, which are low-concentration impurity regions, respectively.

In this embodiment, the impurity regions 807a to 807b and 808a to 808b are p-type impurity regions, and contain an impurity element imparting p-type, for example, boron (B). The impurity regions 807a to 807b are also high-concentration impurity regions, and each has a higher impurity concentration than the impurity regions 808a to 808b, which are low-concentration impurity regions.

That is, the TFTs 829 and 825 are n-channel TFTs, and the TFT 827 is a p-channel TFT.

  A method for manufacturing the gate electrodes 865 to 868 and the electrode 869 is described below.

After forming the gate insulating film 804, the gate insulating film 804 is washed. Next, the gate insulating film 8
A first conductive film and a second conductive film are formed in this order on 04. The first conductive film is, for example, a tungsten film, and the second conductive film is a tantalum nitride film.

Next, a photoresist film is applied on the second conductive film, and this photoresist film is exposed and developed. Thereby, a resist is formed on the second conductive film. Next, using the resist as a mask, the first conductive film and the second conductive film are etched under the first condition, and further, the second conductive film is etched under the second condition. Thus, the lower gate electrode 805a and the upper gate electrode 806a are formed on the island-shaped semiconductor film 872, the lower gate electrode 805b and the upper gate electrode 806b are formed on the island-shaped semiconductor film 873, and the lower gate electrode is formed on the island-shaped semiconductor film 874. 805c and upper layer gate electrode 806c, and lower layer gate electrode 805d and upper layer gate electrode 806d are formed.

The inclination angle of the side surface of each of the lower gate electrodes 805a to 805d is determined by the upper gate electrode 806.
It is gentler than the inclination angle of each side surface a to 806d.

  Further, the lower layer electrode 861 and the upper layer electrode 862 are formed at the same time.

  Thereafter, the photoresist film is removed.

Impurity regions 807a, 807b, 808a, 808b, 809a, 809b, 810a
, 810b, 813a, 813b, 813c, 814a, 814b, 814c, 814d
May be formed by introducing impurities in a self-aligned manner using the gate electrodes 865 to 868 as a mask, or by introducing an impurity element using a resist mask.

Thereafter, an insulating film (not shown) that covers substantially the entire surface is formed. This insulating film is a silicon oxide film, for example, and is formed by a plasma CVD method.

Next, the island-shaped semiconductor films 872 to 874 are subjected to heat treatment to activate the added impurity elements. This heat treatment is performed by a rapid thermal annealing method (RTA method) using a lamp light source, a method of irradiating a YAG laser or an excimer laser from the back surface, a heat treatment using a furnace, or a combination of these methods. is there.

By the above heat treatment, the impurity element is activated and at the same time, the island-shaped semiconductor films 873 to 87 are activated.
The element used as a catalyst when crystallizing 4 (for example, a metal element such as nickel) is gettered into the impurity regions 809a to 809b and 813a to 813c containing high concentration impurities (for example, phosphorus), and the island-shaped semiconductor film 873 and 874, mainly channel formation regions 896 and 89
The nickel concentration in the portions 7a to 897b is reduced. As a result, the crystallinity of the channel formation region is improved. Therefore, the off-current value of the TFT is reduced and high field effect mobility can be obtained. In this way, a TFT having good characteristics can be obtained.

Next, an insulating film 815 is formed over the entire surface including the upper part of the island-shaped semiconductor films 872 to 874. The insulating film 815 is a silicon nitride film, for example, and is formed by a plasma CVD method.

Next, a planarization film to be the interlayer insulating film 816 is formed over the insulating film 815. As the interlayer insulating film 816, a light-transmitting inorganic material (silicon oxide, silicon nitride, silicon nitride containing oxygen, etc.), a photosensitive or non-photosensitive organic material (polyimide, acrylic, polyamide, polyimide amide, resist, or Benzocyclobutene) or a laminate thereof. Other light-transmitting films used for the planarizing film include insulating films made of SiOx films containing alkyl groups obtained by a coating method, such as silica glass, alkylsiloxane polymers, alkylsilsesquioxane polymers, hydrogen An insulating film formed using a silsesquioxane hydride polymer, a hydrogenated alkyl silsesquioxane polymer, or the like can be used. As an example of the siloxane polymer, PSB-K1, P, which is a coating insulating film material manufactured by Toray
Examples thereof include SB-K31 and ZRS-5PH, which is a coating material made by catalytic conversion. The interlayer insulating film 816 may be a single layer film or a multilayer film.

Next, a photoresist film (not shown) is applied on the interlayer insulating film 816, and this photoresist film is exposed and developed. Thereby, a resist is formed on the interlayer insulating film 816. Next, the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804 are etched using this resist as a mask. Accordingly, the contact holes 817a, 817b, 817c, 817d, 8 are formed in the interlayer insulating film 816, the insulating film 815, and the gate insulating film 804.
17e, 817f, 817g, and 817h are formed (see FIG. 16A).

The contact hole 817a is located on the impurity region 807a, and the contact hole 817b is located on the impurity region 807b. The contact hole 817c is located on the impurity region 809a, and the contact hole 817d is formed on the impurity region 809b.
Located on the top. The contact hole 817e is located on the impurity region 813a, and the contact hole 817f is located on the impurity region 813c. The contact hole 817g is located on the conductive film 801, and the contact hole 817h is located on the electrode 869.

  Thereafter, the resist is removed.

Next, as illustrated in FIG. 16B, a first conductive film 875 is formed in each of the contact holes 817 a to 817 h and over the interlayer insulating film 816. The first conductive film 875 is a light-transmitting conductive film. For example, an indium tin oxide film, indium tin oxide containing silicon, or a target in which 2 to 20 wt% zinc oxide is further mixed with indium oxide is used. It is the electrically conductive film formed. Next, a second conductive film 876 is formed over the first conductive film 875. The second conductive film 876 is, for example, a metal film.

Next, a photoresist film 820 is applied over the second conductive film 876. Next, a reticle 840 is disposed above the photoresist film 820. The reticle 840 is formed with semi-permeable films 842a, 842b, 842c, 842d, 842e, 842f, and 842g on a glass substrate, and light-shielding 841a, 841b, 8 on the semi-permeable films 842a to 842g, respectively.
41c, 841d, 841e, 841f, and 841g are formed. Semipermeable membrane 842
a and the light shielding 841a are located above the contact hole 817a, the semipermeable membrane 842b and the light shielding 841b are located above the contact hole 817b and the contact hole 817c,
The semipermeable membrane 842c and the light shielding 841c are located above the contact hole 817c, and the semipermeable membrane 8
42d and the light shielding 841d are located above the contact hole 817d, and the semi-permeable film 842e and the light shielding 841e are located above the contact hole 817e, and the semi-permeable film 842f and the light shielding 8 are provided.
41f is located above the contact hole 817f, and the semipermeable membrane 842g and the light shielding 841g are located above the contact holes 817g and 817h.

Next, the photoresist film 820 is exposed using the reticle 840 as a mask. Thereby, the photoresist film 820 is exposed except for a portion located below the light shielding 841a to 841g and a lower layer of a portion located below the semi-permeable films 842a to 842g. Region 8
Reference numerals 21a, 821b, 821c, 821d, 821e, 821f, and 821g denote areas not exposed to light.

Next, as shown in FIG. 17A, the photoresist film 820 is developed. Thus, the exposed portion of the photoresist film 820 is removed, and the resists 822a and 82 are removed.
2b, 822c, 822d, 822e, 822f, and 822g are formed. Resist 82
2a is located above the contact hole 817a. The resist 822b is located above the contact hole 817b. The resist 822c is located above the contact hole 817c. The resist 822d is located above the contact hole 817d. The resist 822e is located above the contact hole 817e. Resist 82
2f is located above the contact hole 817f. The resist 822g is located above the contact holes 817g and 817h.

Next, as shown in FIG. 17B, first resists 822a to 822g are used as a mask.
The conductive film 875 and the second conductive film 876 are etched. As a result, the resist 822
From the region not covered with a to 822g, the first conductive film 875 and the second conductive film 876
Is removed.

  Thereafter, the resists 822a to 822g are removed.

In this manner, the lower layer electrode 824 is obtained by one resist and one etching process.
a electrode 881 having a and upper layer electrode 823a, electrode 882 having lower layer electrode 824b and upper layer electrode 823b, electrode 883 having lower layer electrode 824c and upper layer electrode 823c, electrode 884 having lower layer electrode 824d and upper layer electrode 823d, lower layer electrode 824e and Upper layer electrode 8
The electrode 885 having the electrode 2385, the electrode 886 having the lower electrode 824f and the upper electrode 823f.
An electrode 887 having a lower layer electrode 863 and an upper layer electrode 864 is formed.

The electrodes 881 to 887 may be formed by connecting wirings to be electrically connected, or may be formed as wirings. In that case, the wirings 881 to 887 are used.

The electrode 881 is an impurity region 807a, the electrode 882 is an impurity region 807b, the electrode 883 is an impurity region 809a, the electrode 884 is an impurity region 809b, and the electrode 885 is an impurity region 813a.
The electrode 886 is electrically connected to the impurity region 813c. The electrode 887 electrically connects the conductive film 801 and the electrode 869.

Next, an interlayer insulating film 845 is formed over the interlayer insulating film 816 and the electrodes 881 to 887 (
FIG. 17C). The interlayer insulating film 845 may be formed using a material similar to that of the interlayer insulating film 816.

Next, a contact hole reaching the electrode 886 is formed in the interlayer insulating film 845, and the pixel electrode 891 (891a, 891) which is electrically connected to the electrode 886 through the contact hole is formed.
1b, 891c, 891d,...) (See FIG. 18). The pixel electrode 891 may be formed using a light-transmitting material, and a material similar to that of the conductive film 875 may be used. Pixel electrode 89
1 is provided with a groove 892 (892a, 892b, 892c,...) And a pixel electrode 89.
1 and the shape of the groove 892 are shown in FIGS. 4, 7, 8A to 8D, and FIGS. 9A to 9D.
).

Thereafter, a first alignment film 826 is formed. In this way, an active matrix substrate is formed.

Note that the TFTs 827 and 829 are formed in the gate signal line driver circuit 854. In FIG. 14B, independent TFTs are shown, but the electrodes 882 and 883 may be electrically connected to form TFTs 827 and 829 as CMOS circuits.

The first terminal electrode 838a and the second terminal for connecting the active matrix substrate and the outside are also provided.
Terminal electrode 838b (shown in FIG. 14B) is formed.

Then, as shown in the plan view of FIG. 14A and the KL cross-sectional view of FIG. 14B, an organic resin film such as an acrylic resin film is formed on the active matrix substrate. It is selectively removed by etching using a mask film. Thereby, columnar spacers 833 are formed on the active matrix substrate. Next, the sealing material 8 is placed in the sealing region 853.
After forming 34, liquid crystal is dropped on the active matrix substrate. Before the liquid crystal is dropped, a protective film that prevents the sealant and the liquid crystal from reacting may be formed on the sealant.

After that, the color filter 832 and the second filter are disposed at positions facing the active matrix substrate.
The counter substrate 830 on which the alignment film 831 is formed is disposed, and these two substrates are attached to the sealing material 83.
Laminate with 4. At this time, the active matrix substrate and the counter substrate 830 are bonded to each other with a uniform interval by the spacer 833. Next, a sealant (not shown) is used to completely seal between both substrates. In this manner, the liquid crystal 846 is sealed between the active matrix substrate and the counter substrate.

Next, if necessary, the active matrix substrate or the counter substrate or both substrates are divided into desired shapes. Further, polarizing plates 835a and 835b are provided. The substrate 80
A retardation plate may be provided between 0 and the polarizing plate 835a and between the counter substrate 830 and the polarizing plate 835b. Further, the retardation plate may be arranged not on the surface between the substrate and the polarizing plate but on the surface of the polarizing plates 835a and 835b opposite to the surface in contact with the substrate.

Next, the flexible printed circuit board (Flexible Print Circuit)
: Hereinafter referred to as FPC) 837 through the anisotropic conductive film 836, the external terminal connection region 852
Connected to the second terminal electrode 838b.

The configuration of the liquid crystal module thus formed will be described. A pixel region 856 is arranged in the center of the active matrix substrate. A plurality of pixels are formed in the pixel region 856. In FIG. 14A, gate signal line driver circuits 854 for driving gate signal lines are arranged above and below the pixel region 856, respectively. In addition, the pixel region 856
A source signal line driver circuit 857 for driving the source signal lines is disposed in a region located between the FPC 837 and the FPC 837. The gate signal line driver circuit 854 may be arranged only on one side, and may be appropriately selected by a designer in consideration of the substrate size in the liquid crystal module. However, in consideration of circuit operation reliability, driving efficiency, and the like, it is desirable that the pixel regions 856 are arranged symmetrically. Input of signals to each drive circuit is performed from the FPC 837.

19A to 19B and FIG. 20 regarding the liquid crystal display module according to the first embodiment.
A description will be given with reference to FIGS. In each figure, the configuration of the pixel portion 930 is as follows.
Similar to the configuration of the pixel region 856 shown in Embodiment 1, a plurality of pixels are formed on the substrate 100.

FIG. 19A is a plan view of the liquid crystal display module, and FIG.
FIG. 10 is a diagram for describing a circuit configuration of 910 (also referred to as a source signal line driver circuit). FIG.
), A gate driver (also referred to as a gate signal line driver circuit) 920 and a source driver 910 are integrally formed on the same substrate 100 as the pixel portion 930. As shown in FIG. 19B, the source driver 910 includes a plurality of thin film transistors 912 that control which source signal line an input video signal is transmitted to, and a shift register 911 that controls the plurality of thin film transistors 912. have.

20A is a plan view of the liquid crystal display module, and FIG. 20B is a diagram for explaining a circuit configuration of a plurality of analog switch TFTs 940. As shown in FIG. 20A, a plurality of analog switch TFTs 940 formed on the substrate 100 and an IC 950 separate from the substrate 100 are configured. The IC 950 and the plurality of analog switch TFTs 940 are electrically connected by, for example, an FPC 960.

The IC 950 is formed using, for example, a single crystal silicon substrate, controls a plurality of analog switch TFTs 940, and inputs video signals to the plurality of analog switch TFTs 940. The plurality of analog switch TFTs 940 controls to which source signal line the video signal is transmitted based on a control signal from the IC.

According to the present invention, it is possible to provide a liquid crystal display device having a wide viewing angle and having a lower manufacturing cost than the conventional one.

In the present invention, since the conductive film is formed on the entire surface of the substrate, it is possible to prevent impurities from the substrate from being mixed into the active layer. This makes it possible to obtain a highly reliable liquid crystal display device.

In the present invention, when a liquid crystal display device including a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable liquid crystal display device can be obtained.

An example in which the present invention is applied to an electronic device will be described with reference to FIGS. This electronic device is one in which the display device or the display module shown in any of the above-described embodiments and examples is mounted.

As this electronic device, a video camera, a digital camera, a goggle type display (head mounted display), a navigation system, a sound reproduction device (car audio component, etc.), a computer, a game device, a portable information terminal (mobile computer, cellular phone, portable type) A game machine or an electronic book), and an image playback device (specifically, Di) provided with a recording medium.
a device equipped with a display capable of reproducing a recording medium such as a digital versatile disc (DVD) and displaying the image). Specific examples of these electronic devices are illustrated in FIGS.

FIG. 21A shows a monitor of a television receiver or a personal computer. Enclosure 20
01, support base 2002, display unit 2003, speaker unit 2004, video input terminal 2005
Etc. For the display portion 2003, the display device or the display module described in any of the above-described embodiments or examples is used. The monitor of the present invention has a wide viewing angle, and can be manufactured at a lower cost than conventional ones. In the display portion of the monitor of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. This makes it possible to obtain a highly reliable monitor. In the monitor of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable monitor can be obtained.

FIG. 21B illustrates a digital camera. An image receiving portion 2103 is provided on the front portion of the main body 2101, and a shutter 2106 is provided on the upper surface portion of the main body 2101. Further, a display portion 2102, operation keys 2104, and an external connection port 2105 are provided on the back surface portion of the main body 2101. As the display portion 2102, the display device or the display module described in any of the above embodiments or examples is used. The digital camera of the present invention has a wide viewing angle, and can be manufactured at a lower cost than conventional ones. In the display portion of the digital camera of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. This makes it possible to obtain a highly reliable digital camera. In the digital camera of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable digital camera can be obtained.

FIG. 21C illustrates a laptop personal computer. A main body 2201 is provided with a keyboard 2204, an external connection port 2205, and a pointing mouse 2206. In addition, a housing 2202 having a display portion 2203 is attached to the main body 2201. For the display portion 2203, the display device or the display module described in any of the above embodiments or examples is used. The computer of the present invention has a wide viewing angle, and can be manufactured at a lower cost than conventional ones. In the display portion of the computer of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. As a result, a highly reliable computer can be obtained. In the computer of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable computer can be obtained.

FIG. 21D illustrates a mobile computer, which includes a main body 2301, a display portion 2302, a switch 2303, operation keys 2304, an infrared port 2305, and the like. The display portion 2302 is provided with an active matrix display device. As the display portion 2302, the display device or the display module described in any of the above-described embodiments or examples is used. The computer of the present invention has a wide viewing angle, and can be manufactured at a lower cost than conventional ones. In the display portion of the computer of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. As a result, a highly reliable computer can be obtained. In the computer of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable computer can be obtained.

FIG. 21E illustrates an image reproduction device. A main body 2401 is provided with a display portion B 2404, a recording medium reading portion 2405, and operation keys 2406. The main body 2401 includes
A housing 2402 having a speaker portion 2407 and a display portion A 2403 is attached. For each of the display portion A 2403 and the display portion B 2404, the display device or the display module described in any of the above-described embodiments or examples is used. The image reproducing apparatus of the present invention has a wide viewing angle and can be manufactured at a lower cost than the conventional one. In the display portion of the image reproducing device of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. This makes it possible to obtain a highly reliable image reproducing apparatus. In the image reproducing device of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable image reproducing device can be obtained.

FIG. 21F illustrates an electronic book. An operation key 2503 is provided on the main body 2501. A plurality of display portions 2502 are attached to the main body 2501. Display unit 2502
The display device or the display module shown in any of the above-described embodiments or examples is used for the display. The electronic book of the present invention has a wide viewing angle and can be manufactured at a lower cost than conventional ones. In the display portion of the electronic book of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. As a result, a highly reliable electronic book can be obtained. In the electronic book of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that an electronic book with high reliability can be obtained.

FIG. 21G illustrates a video camera. A main body 2601 is provided with an external connection port 2604, a remote control reception unit 2605, an image reception unit 2606, a battery 2607, an audio input unit 2608, operation keys 2609, and an eyepiece unit 2610. In addition, a housing 2603 having a display portion 2602 is attached to the main body 2601. For the display portion 2602, the display device or the display module described in any of the above embodiments or examples is used. The video camera of the present invention has a wide viewing angle and can be manufactured at a lower cost than the conventional one. In the display portion of the video camera of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. This makes it possible to obtain a highly reliable video camera. In the video camera of the present invention, when a display portion having a top gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable video camera can be obtained.

FIG. 21H illustrates a mobile phone, which includes a main body 2701, a housing 2702, a display portion 2703, an audio input portion 2704, an audio output portion 2705, operation keys 2706, an external connection port 2707, an antenna 2708, and the like. For the display portion 2703, the display device or the display module described in any of the above embodiments or examples is used. The video camera of the present invention
It has a wide viewing angle and can be manufactured at a lower cost than conventional ones. In the display portion of the mobile phone of the present invention, the conductive film is formed over the entire surface of the substrate, so that impurities from the substrate can be prevented from being mixed into the active layer. This makes it possible to obtain a highly reliable mobile phone. In the cellular phone of the present invention, when a display portion having a top-gate thin film transistor is manufactured, the potential of the back gate is stabilized, so that a highly reliable cellular phone can be obtained.

100 Substrate 101 Substrate 102 Base film 103 Semiconductor film 104 Gate insulating film 105 Gate electrode 106 Interlayer insulating film 107 Electrode 108 Electrode 109 Electrode 111 Interlayer insulating film 112 Alignment film 113 Pixel electrode 114 Pixel electrode 114a Pixel electrode 114b Pixel electrode 114c Pixel electrode 115 Conductive film 116 Liquid crystal 117 Groove 117a Groove 117b Groove 117c Groove 119 Wiring 120 Counter substrate 121 TFT
122 Color filter 123 Alignment film 124 Polarizing plate 125 Electric field 126 Polarizing plate 131a Region 131b Region 132 Channel formation region 141 Electrode 142 Electrode 150 Pixel portion 152 Source line driver circuit 154 Gate line driver circuit 161 Wiring 162 Contact hole 201 Substrate 202 Conductive film 203 Base film 204 Gate electrode 205 Electrode 206 Island-like semiconductor film 207a Electrode 207b Electrode 208a Region 208b Region 209 Electrode 210 Insulating film 211 Electrode 212 TFT
213 Gate insulating film 214 Electrode 214a Electrode 214b Electrode 214c Electrode 215 Alignment film 216 Liquid crystal 217 Polarizing plate 221 Counter substrate 222 Color filter 223 Orientation film 224 Polarizing plate 225 Horizontal electric field 241 Color filter 241B Color filter 241G Color filter 241R Color filter 251 Electrode 253 Island-like semiconductor film 256 Channel formation region 258a Region 258b Region 800 Substrate 801 Conductive film 802 Insulating film 803 Semiconductor film 804 Gate insulating film 805a Lower gate electrode 805b Lower gate electrode 805c Lower gate electrode 805d Lower gate electrode 806a Upper gate electrode 806b Upper layer Gate electrode 806c Upper gate electrode 806d Upper gate electrode 807a Impurity region 807b Impurity region 808a Impurity region 808b Impure Region 809a impurity region 809b impurity region 810a impurity region 810b impurity region 813 impurity region 813a impurity region 813b impurity region 813c impurity region 814a impurity region 814b impurity region 814c impurity region 814d impurity region 815 insulating film 816 interlayer insulating film 817a contact hole 817b contact hole 817c Contact hole 817d Contact hole 817e Contact hole 817f Contact hole 817g Contact hole 817h Contact hole 820 Photoresist film 821a Region 821b Region 821c Region 821d Region 821e Region 821f Region 821g Region 821h Region 822a Resist 822e Resist 822d Resist 822d Resist 822d Resist 822d Resist 822d f resist 822g resist 823a upper electrode 823b upper electrode 823c upper electrode 823d upper electrode 823e upper electrode 823f upper electrode 824a lower electrode 824b lower electrode 824c lower electrode 824d lower electrode 824e lower electrode 824f lower electrode 825 TFT
826 Alignment film 827 TFT
829 TFT
830 Counter substrate 831 Alignment film 832 Color filter 833 Spacer 834 Sealing material 835a Polarizing plate 835b Polarizing plate 836 Anisotropic conductive film 837 FPC
838a Terminal electrode 838b Terminal electrode 840 Reticle 841a Light shielding 841b Light shielding 841c Light shielding 841d Light shielding 841e Light shielding 841f Light shielding 841g Light shielding 842a Semi-permeable film 842b Semi-permeable film 842c Semi-permeable film 842d Semi-permeable film 842e Semi-permeable film 842f Semi-permeable film 842g Semi-permeable film 842g 845 Interlayer insulating film 846 Liquid crystal 852 External terminal connection region 853 Sealing region 854 Gate signal line driving circuit 856 Pixel region 857 Source signal line driving circuit 861 Lower layer electrode 862 Upper layer electrode 863 Lower layer electrode 864 Upper layer electrode 865 Gate electrode 866 Gate electrode 867 Gate Electrode 868 Gate electrode 869 Electrode 872 Insular semiconductor film 873 Insular semiconductor film 874 Insular semiconductor film 875 Conductive film 876 Conductive film 881 Electrode 882 Electrode 883 Electrode 884 Electrode 885 Electrode 887 Electrode 887 Electrode 8 1 pixel electrode 891a pixel electrode 891b pixel electrode 891c pixel electrode 891d pixel electrode 892 groove 892a groove 892b groove 892c groove 895 channel formation region 896 channel formation region 897a channel formation region 897b channel formation region 910 source driver 911 shift register 912 thin film transistor 920 gate driver 930 Pixel unit 940 Analog switch TFT
950 IC
960 FPC
2001 Housing 2002 Support stand 2003 Display unit 2004 Speaker unit 2005 Video input terminal 2101 Main unit 2102 Display unit 2103 Image receiving unit 2104 Operation key 2105 External connection port 2106 Shutter 2201 Main unit 2202 Case 2203 Display unit 2204 Keyboard 2205 External connection port 2206 Pointing mouse 2301 Main body 2302 Display unit 2303 Switch 2304 Operation key 2305 Infrared port 2401 Main body 2402 Case 2403 Display unit A
2404 Display B
2405 unit 2406 operation key 2407 speaker unit 2501 main unit 2502 display unit 2503 operation key 2601 main unit 2602 display unit 2603 housing 2604 external connection port 2605 remote control receiving unit 2606 image receiving unit 2607 battery 2608 audio input unit 2609 operation key 2610 eyepiece unit 2701 main unit 2702 Housing 2703 Display unit 2704 Audio input unit 2705 Audio output unit 2706 Operation key 2707 External connection port 2708 Antenna

Claims (4)

A common electrode on the substrate;
Wiring electrically connected to the common electrode;
A region in contact with the upper surface of the wiring is a first conductive film,
A first insulating film on the common electrode, on the wiring, and on the first conductive film;
A pixel electrode having a region in contact with the upper surface of the first insulating film;
A second conductive film having a region in contact with the upper surface of the common electrode, a region in contact with the upper surface of the first conductive film, and a region in contact with the upper surface of the first insulating film;
An alignment film on the pixel electrode and the second conductive film;
Liquid crystal on the alignment film;
A transistor electrically connected to the pixel electrode;
A gate wiring electrically connected to the transistor;
A source wiring electrically connected to the transistor;
The common electrode has a region overlapping with the gate wiring, a region overlapping with the wiring, a region overlapping with the semiconductor layer of the transistor, a region overlapping with the source wiring, and a region overlapping with the pixel electrode,
The pixel electrode has a plurality of openings,
The first insulating film is provided on the transistor;
Each of the common electrode, the pixel electrode, and the second conductive film is a light-transmitting conductive film,
The wiring is electrically connected to the common electrode through the first conductive film and the second conductive film,
The liquid crystal display device, wherein the orientation of the liquid crystal is controlled by an electric field between the common electrode and the pixel electrode. In claim 1,
The liquid crystal display device, wherein the semiconductor layer contains In, Ga, and Zn. In claim 1,
The liquid crystal display device, wherein the semiconductor layer includes polycrystalline silicon. In any one of Claims 1 thru | or 3,
The source wiring has a bent portion when viewed from above,
The pixel electrode has a shape along the bent portion of the source wiring,
The liquid crystal display device according to claim 1, wherein the plurality of openings have a shape along the bent portion of the front source line.

Images