JP2016001670A - Semiconductor device - Google Patents

Semiconductor device Download PDF

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Publication number
JP2016001670A
JP2016001670A JP2014121077A JP2014121077A JP2016001670A JP 2016001670 A JP2016001670 A JP 2016001670A JP 2014121077 A JP2014121077 A JP 2014121077A JP 2014121077 A JP2014121077 A JP 2014121077A JP 2016001670 A JP2016001670 A JP 2016001670A
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layer
diode
current
time
carriers
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JP2014121077A
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直樹 森川
Naoki Morikawa
直樹 森川
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サンケン電気株式会社
Sanken Electric Co Ltd
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Priority to JP2014121077A priority Critical patent/JP2016001670A/en
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Abstract

PROBLEM TO BE SOLVED: To soften the current waveform of a high-speed diode at the time of reverse recovery operation.SOLUTION: In a diode having a PiN-type diode structure which flows the current in a longitudinal direction, a carrier residual layer (crystal defect layer) which generates carriers when reverse bias is applied, is locally arranged in a region of a drift layer outside of a depletion region which is formed when reverse bias is applied. Carriers (electrons) are supplied by the layer at the time of switching operation and thereby the current flows; therefore carriers do not rapidly disappear and the current waveform at the time of reverse recovery operation can be made soft. Because no carrier residual layer (crystal defect layer) is provided on a rear surface of the diode, the current waveform can be made soft without increasing Vf.

Description

本発明は、逆回復動作時の電流波形において、ソフトスイッチング特性を有するダイオードに関する。 The present invention provides a reverse recovery operation time of the current waveform, to a diode having a soft switching characteristic.

近年、高周波整流に用いるスイッチングダイオードの高速化が求められている。 Recently, high-speed switching diode used in the high-frequency commutation is required. ダイオードを高速化するには半導体素子内のキャリアのライフタイムを短く調整して逆回復時間を短くすることが必要であり、キャリアの消滅が急速に行われるようにライフタイムキラーとして働く、金(Pt)、白金(Pt)などが導入されることがある。 A diode to speed is necessary to shorten the reverse recovery time is shortened adjust the carrier lifetime in semiconductor devices, act as lifetime killers as disappearance of carriers is rapidly performed, gold ( Pt), it may be platinum (Pt) are introduced.

特開平2−170471号公報 富士電機 号公報 JP-2-170471 discloses Fuji No.

しかしながら、従来技術でダイオードを高速化した場合、逆回復動作時に逆方向電流が0電流値に近づく際の波形の立ち上がりの勾配(図1の1)が大きくなり(ハード波形)、これによって波形が0電流値に収束する際にリンギングと呼ばれるノイズが発生する問題があった。 However, when the speed of the diode in the prior art, the rising gradient of the waveform at the time of reverse current during the reverse recovery operation approaches zero current value (1 1) is increased (hard waveform), whereby the waveform when converges to 0 current noise referred to as ringing a problem occurring.

本発明は、上記問題点を解決し、逆方向電流の波形の立ち上がりの勾配を小さくする(図2の1参照:ソフト波形)ことを目的とする。 The present invention, the above problems were solved, the rising gradient of the waveform of the reverse current is small (1 see Figure 2: Soft waveform) It is an object.


上述の課題を解決するために、本発明は、以下に掲げる構成とした。 In order to solve the above problems, the present invention has a structure set forth below.
本発明の半導体装置は、縦方向に電流を流すPiN構造のダイオードであり、逆バイアスをかけた際に半導体内部に形成される空乏層領域の外側(不活性領域)の、チャネルストッパ下部のドリフト層の領域に、局所的にキャリアを発生するキャリア残存層(結晶欠陥層)を持つ。 The semiconductor device of the present invention is a diode PiN structure to flow a current in a vertical direction, the outer depletion region (inactive region) formed inside the semiconductor when the reverse biased, the channel stopper under the drift in the region of the layer, locally with carrier residual layer of the carrier for generating a (crystalline defect layer).

キャリア残存層層(結晶欠陥層)の密度は、8E11atom/cm3から5E15atom/cm3の間であることを特徴とする。 Density of the carrier residual layer layer (crystalline defect layer) is characterized by is between 8E11atom / cm3 of 5E15atom / cm3.

キャリア残存層の幅(図4Wb)は、チャネルストッパの幅(図4Wa)より小さいことを特徴とする。 Width of the carrier remaining layer (FIG 4Wb) is characterized by less than the width of the channel stopper (FIG 4WA). これによってチャネルストッパの特性を変化させることなく、逆回復動作時の電流波形をソフト化することができる。 Thus, without changing the characteristics of the channel stopper can be softened a current waveform during the reverse recovery operation.

本発明によれば、高速ダイオードの逆回復動作時の電流波形をソフト化でき、リンギングを抑制できる。 According to the present invention, can soften the current waveform during the reverse recovery operation of the high speed diode, the ringing can be suppressed.

従来品のダイオードの逆回復動作時の電流波形である。 A reverse recovery operation time of the current waveform of the conventional diode. 本発明の実施例1に係るダイオードの逆回復動作時の電流波形である。 A reverse recovery operation time of the current waveform of the diode according to the first embodiment of the present invention. 従来品のダイオードチップの断面図である。 It is a cross-sectional view of a conventional diode chip. 本発明の実施例1に係るダイオードチップの断面図である。 It is a cross-sectional view of the diode chip according to a first embodiment of the present invention.

以下、本発明の実施の形態となる構造について説明する。 The following describes the structure as a preferred embodiment of the present invention.

実施例1に係るダイオードの構造について説明する。 The structure of the diode according to the first embodiment will be described. 図4に示されているように本発明のダイオードは、空乏層領域の外側の外周領域(不活性領域)のドリフト層内部、チャネルストッパ下部に、キャリア残存層(結晶欠陥層)を有している。 Diode of the present invention as shown in Figure 4, the drift layer inside the outer peripheral region outside the depletion region (inactive region), the lower channel stopper, having carrier remaining layer (crystalline defect layer) there.

1、逆回復動作時の逆方向電流の立ち上がりの勾配 2、アノード電極 3、P+拡散層 4、N−拡散層(ドリフト層) 1, the rising gradient 2 reverse current during the reverse recovery operation, the anode electrode 3, P + diffusion layer 4, N-diffusion layer (drift layer)
5、N+拡散層(裏面コンタクト層) 5, N + diffusion layer (back contact layer)
6、カソード電極 7、EQR 6, a cathode electrode 7, EQR
8、絶縁膜 9、チャネルストッパ 10、空乏層 11、キャリア残存層(結晶欠陥層) 8, insulating film 9, the channel stopper 10, the depletion layer 11, the carrier remaining layer (crystalline defect layer)

Claims (2)

  1. 縦方向に電流を流すPiN型のダイオード構造を有し、逆バイアスをかけた際に形成される空乏層外側の外周領域(不活性領域)に、キャリアを発生するキャリア残存層(結晶欠陥層)を持つ構造を特徴とする半導体装置。 Has a PiN type of diode structure to flow a current in a vertical direction, the depletion layer outside the peripheral region which is formed when reverse biased (inactive region), carrier residual layer that generates carriers (crystalline defect layer) wherein a structure with.
  2. 前記キャリア残存層(結晶欠陥層)は、チャネルストッパ下のドリフト層内に形成されることを特徴とする、請求項1に記載の半導体装置。 The carrier remaining layer (crystalline defect layer) is characterized by being formed in the drift layer under the channel stopper, the semiconductor device according to claim 1.
JP2014121077A 2014-06-12 2014-06-12 Semiconductor device Pending JP2016001670A (en)

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JP2014121077A JP2016001670A (en) 2014-06-12 2014-06-12 Semiconductor device
CN201510317613.2A CN105280721A (en) 2014-06-12 2015-06-11 Semiconductor device

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09246570A (en) * 1996-03-13 1997-09-19 Hitachi Ltd Semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10316222B3 (en) * 2003-04-09 2005-01-20 eupec Europäische Gesellschaft für Leistungshalbleiter mbH A method for producing a robust semiconductor device and thus produced semiconductor device
CN102870201B (en) * 2010-11-10 2016-01-13 丰田自动车株式会社 A method of manufacturing a semiconductor device
CN104620391B (en) * 2012-10-23 2017-09-19 富士电机株式会社 Semiconductor device and manufacturing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09246570A (en) * 1996-03-13 1997-09-19 Hitachi Ltd Semiconductor device

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