JP2015506584A - 光起電力セル及び製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 222
- 239000000463 material Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- 239000004020 conductor Substances 0.000 claims description 9
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 230000005611 electricity Effects 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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Abstract
Description
Claims (10)
- − 主要表面を有する第一導電率タイプの半導体基材(1)と、
− 前記基材(1)の主要表面と接触している、第一導電率タイプのアモルファス半導体材料の第一の層(2)と、
− 前記第一のアモルファス層(2)の上に形成された第一の電気的接点(3)と、
− 前記基材(1)の主要表面と接触している、第二導電率タイプのアモルファス半導体材料の第二の層(4)と、
− 前記第二のアモルファス層(4)の上に形成された第二の電気的接点(5)と、
− 電気的絶縁層(6)と
を備える光起電力セルであって、
前記電気的絶縁層(6)が、前記第一のアモルファス層(2)の上に完全に形成され、前記第一及び第二の接点(3、5)が前記電気的絶縁層(6)の上に伸びている、光起電力セル。 - 前記第二のアモルファス層(4)が、前記電気的接点(5)により完全に覆われており、前記絶縁層(6)を覆っている、請求項1に記載の光起電力セル。
- 前記第二のアモルファス層(4)が、前記基材(1)に電気的に接続され、前記第二の電気的接点(5)により完全に覆われている、請求項1または2に記載の光起電力セル。
- 前記基材(1)の主要表面が、前記第一のアモルファス層(2)および前記第二のアモルファス層(4)により完全に覆われている、請求項1〜3のいずれか一項に記載の光起電力セル。
- 前記電気的絶縁層(6)が、第一の吸収層及び第二の保護層を備える、請求項1〜4のいずれか一項に記載の光起電力セル。
- 前記電気的絶縁層(6)の前記吸収層が、前記電気的絶縁層(6)の中間で二つの非接触部分に分けられ、前記保護層の一部を自由に残す、請求項5に記載の光起電力セル。
- 前記主要表面に対して垂直方向に、前記基材(1)、前記第一のアモルファス層(2)、前記電気的絶縁層(6)、前記第二のアモルファス層(4)、及び前記電気的接点(3、5)の一方を順に備える、少なくとも一個の積層体を備える、請求項1〜6のいずれか一項に記載の光起電力セル。
- 光起電力セルの製造方法であって、
− 第一導電率タイプの半導体材料の層を備える基材(1)を用意する工程であって、前記基材(1)を、第一導電率タイプの第一のアモルファス層(2)および電気的絶縁層(6)を備える第一のパターンによって部分的に覆い、前記電気的絶縁層(6)を、前記第一のアモルファス層(2)によって前記基材(1)から分離し、前記基材(1)及び前記第一のパターンを、第二導電率タイプの第二のアモルファス層(4)によって覆う、工程と、
− 前記第二のアモルファス層(4)及び前記第一のパターンを部分的にエッチングし、前記第一のアモルファス層の一部を解放し、前記基材(1)の一部を、前記第二のアモルファス層(4)によって覆われたままにする工程と、
− 前記第一のアモルファス層(2)の第一の接点(3)及び前記第二のアモルファス層(4)の第二の接点(5)を導電性材料を使用して形成し、二つの接点(3、5)で、前記電気的絶縁層(6)を部分的に覆い、電気的に分離する工程と
を含む、方法。 - 前記第一及び第二の接点(3、5)が、
− 前記第一及び第二のアモルファス層(2、4)上へ導電性材料を堆積させること、
− 前記導電性材料及び前記電気的絶縁層(6)上の前記第二のアモルファス層(4)をエッチングし、前記電気的絶縁層(6)の一部を解放し、前記二つの接点(3、5)を電気的に分離すること
により形成される、請求項8に記載の方法。 - 前記電気的絶縁層(6)が保護層及び吸収層を備え、エッチングがレーザー照射により行われ、前記吸収層の一部だけを除去し、前記吸収層を、二つの非接触部分に分け、前記保護層の一部を自由に残す、請求項9に記載の方法。
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Application Number | Priority Date | Filing Date | Title |
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FR1200037A FR2985608B1 (fr) | 2012-01-05 | 2012-01-05 | Cellule photovoltaique et procede de realisation |
FR1200037 | 2012-01-05 | ||
PCT/FR2013/000006 WO2013102725A2 (fr) | 2012-01-05 | 2013-01-03 | Cellule photovoltaïque et procédé de réalisation |
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JP2015506584A true JP2015506584A (ja) | 2015-03-02 |
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JP2014550744A Pending JP2015506584A (ja) | 2012-01-05 | 2013-01-03 | 光起電力セル及び製造方法 |
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US (1) | US20140373919A1 (ja) |
EP (1) | EP2801116A2 (ja) |
JP (1) | JP2015506584A (ja) |
KR (1) | KR20140112537A (ja) |
FR (1) | FR2985608B1 (ja) |
WO (1) | WO2013102725A2 (ja) |
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DE102015112046A1 (de) | 2015-07-23 | 2017-01-26 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Verfahren zur Herstellung einseitig angeordneter strukturierter Kontakte in einer Schichtanordnung für ein photovoltaisches Bauelement |
EP3163632A1 (en) | 2015-11-02 | 2017-05-03 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Photovoltaic device and method for manufacturing the same |
US10770505B2 (en) * | 2017-04-05 | 2020-09-08 | Intel Corporation | Per-pixel performance improvement for combined visible and ultraviolet image sensor arrays |
CN113748522A (zh) | 2019-03-29 | 2021-12-03 | 太阳电力公司 | 具有包括区分开的p型和n型区与偏置触点的混合结构的太阳能电池 |
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DE10045249A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements |
EP1519422B1 (en) | 2003-09-24 | 2018-05-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaic cell and its fabrication method |
WO2010113750A1 (ja) * | 2009-03-30 | 2010-10-07 | 三洋電機株式会社 | 太陽電池 |
KR20130056364A (ko) * | 2010-04-23 | 2013-05-29 | 솔렉셀, 인크. | 고효율 태양 전지 극 저 표면 재결합 속도를 달성하기 위한 패시베이션 방법 및 장치 |
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- 2013-01-03 JP JP2014550744A patent/JP2015506584A/ja active Pending
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WO2011105554A1 (ja) * | 2010-02-26 | 2011-09-01 | 三洋電機株式会社 | 太陽電池及び太陽電池の製造方法 |
WO2012014960A1 (ja) * | 2010-07-28 | 2012-02-02 | 三洋電機株式会社 | 太陽電池の製造方法 |
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KR20140112537A (ko) | 2014-09-23 |
WO2013102725A3 (fr) | 2014-05-01 |
FR2985608A1 (fr) | 2013-07-12 |
WO2013102725A2 (fr) | 2013-07-11 |
EP2801116A2 (fr) | 2014-11-12 |
FR2985608B1 (fr) | 2016-11-18 |
US20140373919A1 (en) | 2014-12-25 |
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