JP2015197510A - Organic device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an organic device having a novel configuration without a need of using a counterbore-processed base plate, as a base plate for encapsulation.SOLUTION: An organic device includes: an organic device element including two opposed electrodes and an organic layer arranged between the two opposed electrodes; and two base plates opposingly arranged so as to hold the organic device element therebetween. Spacers are arranged between the two base plates.

Description

  The present invention relates to an organic device such as an organic electroluminescence device, an organic transistor, and an organic thin film solar cell.

  Organic devices using organic substances are expected to be used in a wide range of applications such as organic electroluminescence devices (hereinafter sometimes referred to as “organic EL devices”), organic transistors, and organic thin-film solar cells.

  An organic EL device has a configuration in which a transparent electrode, an organic light emitting layer, and a counter electrode are sequentially stacked on a substrate made of glass or plastic, and a sealing substrate is further stacked thereon.

  Here, as the sealing substrate, for example, as disclosed in the following Patent Documents 1 to 5, “the thickness of the organic device element formed by laminating the transparent electrode, the organic light emitting layer, and the counter electrode” In many cases, a glass substrate that has been subjected to a “spotting” process is used.

JP 2006-1000018 A JP 2010-086702 A JP 2012-204328 A JP 2013-122903 A JP 2013-168381 A

  However, when “spotting” the glass substrate, etching must be performed, which makes the manufacturing process complicated and expensive. In addition, since the strength of the glass substrate that has been “spotted” decreases, the handling of the glass substrate needs to be handled with care, the yield decreases accordingly, and further, it is difficult to increase the size. Can occur.

  The present invention is an invention made under such circumstances, and it is an object of the present invention to provide an organic device having a new structure, which does not require the use of a “spotted” processed substrate as a sealing substrate. Let it be the main issue.

  An organic device of the present invention for solving the above-described problem is disposed so as to sandwich an organic device element including two organic electrodes facing each other and an organic layer disposed between the two electrodes. And two opposing substrates, wherein the two substrates are supported by a spacer disposed therebetween.

  In the above invention, a desiccant may be further disposed between the two substrates.

  In the above invention, at least one of the two electrodes constituting the organic device element may be formed of a metal material having a melting point lower than that of the substrate.

  According to the organic device of the present invention, spacers for supporting these two substrates are arranged between two opposing substrates arranged so as to sandwich the organic device element. A space for arranging the organic device elements can be secured without processing. Therefore, various organic devices can be manufactured inexpensively and with a high yield, and the demand for an increase in size can be met.

It is a schematic sectional drawing of the organic device concerning embodiment of this invention. It is a schematic front view of the organic device shown in FIG. It is a schematic front view of the organic device concerning another embodiment of this invention. It is a schematic sectional drawing of the organic device concerning another embodiment of this invention. It is a schematic sectional drawing of the organic device concerning another embodiment of this invention.

  Below, the organic device concerning the embodiment of the present invention is explained in detail using a drawing.

Organic Device FIG. 1 is a schematic cross-sectional view of an organic device according to an embodiment of the present invention.

  As shown in FIG. 1, an organic device 100 according to this embodiment includes an organic device element 10 including two electrodes 11, 12 facing each other and an organic layer 13 disposed between the two electrodes 11, 12. And two opposing substrates 20 and 21 disposed so as to sandwich the organic device element 10, and the two substrates 21 and 22 are supported by spacers 30 and 30 disposed therebetween. .

  In the organic device 100 according to the present embodiment, spacers 30 and 30 for supporting the two substrates 20 and 21 are arranged between two opposing substrates 20 and 21 arranged so as to sandwich the organic device element 10. Therefore, for example, a space for arranging the organic device element 10 can be secured without performing a “spot” process on the upper substrate 21. Therefore, the organic device 100 can be manufactured at a low cost and with a high yield, and the demand for an increase in size can be met. Moreover, since the height and arrangement location of the spacer 30 can be designed relatively freely, it is possible to appropriately provide a space for installing a desiccant or the like, and furthermore, each layer constituting the organic device element 10 That is, the thicknesses of the electrodes 11 and 12 and the organic layer 13 can be designed relatively freely.

  Hereinafter, each structure of the organic device 100 concerning this embodiment is demonstrated.

Organic Device Element The organic device element 10 includes two opposing electrodes 11 and 12 and an organic layer 13 disposed between the two electrodes 11 and 12.

-Electrode About the two electrodes 11 and 12 which comprise the organic device element 10, it can design suitably according to the kind of the organic device 100. FIG.
For example, when the organic device 100 is an organic EL device or an organic thin film solar cell, the two electrodes 11 and 12 become an anode and a cathode, respectively. When the organic device 100 is an organic transistor, the two electrodes 11 and 12 are any one of a gate electrode, a source electrode, and a drain electrode.

The electrodes 11 and 12 may or may not have optical transparency, and can be appropriately selected according to the type and application of the organic device.
Further, the materials of the electrodes 11 and 12 are not particularly limited, and can be appropriately selected from conventionally known materials according to the type and use of the organic device 100. For example, when the organic device 100 is an organic EL device or an organic thin film solar cell, one electrode 11 is made of a transparent electrode material such as ITO (indium tin oxide) or IZO (indium zinc oxide), and the other electrode 12 is used. It is good also as metal electrode materials, such as gold | metal | money, platinum, silver, copper, aluminum, and various alloy materials. On the other hand, even when the organic device 100 is an organic transistor, the same material as described above can be used, and further, it may be appropriately selected from electrode materials used in conventionally known organic transistors. .

  As a material of the electrodes 11 and 12 of the organic device 100 according to the present embodiment, it is preferable to use a metal material having a melting point lower than that of the substrates 20 and 21. This is because by using such a material, the electrodes 11 and 12 can be formed without using a vapor deposition method. Therefore, it is particularly preferable to use the material for the electrode 12 formed on the upper side of the organic device element 10.

Ga-based alloy The metal material having a lower melting point than the substrates 20 and 21 is, for example, a Ga-based alloy that is in a paste state at a temperature equal to or higher than the melting point. And a metal having at least an electron injection function.

  In general, “metal paste” means a paste obtained by using a resin as a binder and dispersing metal powder in this resin to form a paste. Means a resin that contains no metal and is in a paste state. Thus, since the electrode comprised from this paste-form metal does not contain resin etc., it has the outstanding electron injection function. The “electron injection function” in the present specification means a function that can inject holes from the anode or the hole injection layer when an electric field is applied, and can inject electrons from the cathode or the electron injection layer. To do.

  The Ga-based liquid metal means a liquid that is in a liquid state at room temperature (as a guideline, 5 to 45 ° C.) and exhibits sufficient fluidity at a relatively low temperature up to a metal temperature of about 50 ° C. even at room temperature or when heated. The melting point is preferably 50 ° C. or lower. As the Ga-based liquid metal, Ga or an alloy of Ga and one or more metals selected from In, Sn, and Zn can be preferably used.

  Ga-based alloys are preferably used because of their low fluidity and toxicity at room temperature. In the present embodiment, an alloy is an apparently uniform metal composed of two or more kinds of metals, and it is not always necessary that a metal bond be formed between different kinds of metals. In the present embodiment, the Ga-based alloy contains Ga as a main component, preferably 40% by mass, more preferably 50% by mass of the metal constituting the Ga-based alloy.

  Ga alone is a liquid in a wide temperature range from room temperature to high temperature, with a melting point of 30 ° C. and a boiling point of 2400 ° C. As a metal capable of maintaining a liquid state at a lower temperature, a Ga-based liquid metal containing Ga and at least one other metal of In, Sn, and Zn as an essential component can be used. Table 1 shows an example of the composition ratio and melting point of Ga and Ga-based liquid metal that can be used in this embodiment.

  The composition of each component constituting the Ga-based alloy of the present embodiment means the charged mass of each metal component weighed in advance, or the composition measured by the X-ray diffraction method, XPS method, or other appropriate method. To do.

  The alkali metal or alkaline earth metal constituting the Ga-based alloy of this embodiment is one or more metals selected from Ca, Li, Na, K, Mg, Rb, Cs, Ba, Be, and Sr. Is preferred.

  Alkaline metals and alkaline earth metals have low melting points such as Li (180 ° C.), Na (98 ° C.), K (64 ° C.), Rb (39 ° C.), Cs (29 ° C.) and high melting points. Ca (839 ° C.), Mg (650 ° C.), Ba (725 ° C.), Be (1284 ° C.), Sr (770 ° C.). Since alkali metals or alkaline earth metals are highly dangerous due to their strong oxidative combustion properties in the atmosphere, they are usually preferably handled in a glove box substituted with an inert gas.

  Since the low melting point group can be heated and melted in the glove box relatively safely, it can be weighed and mixed with the Ga-based liquid metal. On the other hand, even in the glove box, it is very dangerous for the high melting point group to be heated and melted and directly mixed with the Ga-based liquid metal because of the large amount of heat. For this reason, it is preferable to prepare an alloy with another metal in advance in a vacuum melting furnace that can prevent combustion, and to handle it after it is in a stable state.

  Alkali metals or alkaline earth metals are all preferable because they have a low work function and can exhibit a high electron injection function, and Ca (work function 2.87 eV), Li (work function 2.4 eV), Na (work function) 2.36 eV), K (work function 2.28 eV), Mg (work function 3.66 eV), Rb (work function 2.16 eV), Cs (work function 2.14 eV), Ba (work function 2.52 eV), Be (work function 2.45 eV) and Sr (work function 2.59 eV) can be preferably used. In this embodiment, the value of “work function” of each element is “J. Appl. Phys. 48 "(1977), page 4729, and the actual measurement data of the ionization potential measuring device.

Among these, Ca is particularly preferable because it can be easily mixed in a large amount with a Ga-based liquid metal. Ca has a much larger molar volume than other metals, and it is considered that Ca can be dissolved in a large amount in Ga-based liquid metal. In addition, a negative electrode having high power conversion efficiency and a long element life can be easily obtained. An example of the molar volume of each metal is shown below.
Ca 26.2 × 10 ³ (m ³ / mol),
Li 13.0 × 10 ⁻⁶ (m ³ / mol)
Na 23.8 × 10 ⁻³ (m ³ / mol)
K 45.9 × 10 ⁻³ (m ³ / mol)
Mg 14.0 × 10 ⁻³ (m ³ / mol)
Rb 55.8 × 10 ⁻⁶ (m ³ / mol)
Cs 70.9 × 10 ⁻³ (m ³ / mol)
Ba 38.2 × 10 ⁻³ (m ³ / mol)
Be 4.9 × 10 ⁻³ (m ³ / mol)
Sr 33.9 × 10 ⁻³ (m ³ / mol)

  By containing 5 to 30% by mass of Ca, an appropriate paste property can be obtained as described below, and an electron injection function can be exhibited. Further, a higher electron injection function can be imparted by mixing a small amount of other alkali metal or alkaline earth metal.

  As other metals forming an alloy with an alkali metal or alkaline earth metal, In or Sn is preferable. An alloy of an alkali metal or alkaline earth metal and In or Sn melts into a Ga-based liquid metal in the atmosphere at room temperature, so that it can be easily weighed and mixed. In addition, since In or Sn is easily melted in Ga, even if the above alloy is dissolved in Ga-based liquid metal, In or Sn is not separated as a solid phase, and a Ga-type alloy in a uniform paste state is manufactured. it can.

  Needless to say, even a high melting point group alkali metal or alkaline earth metal can be directly alloyed with a Ga-based liquid metal in a vacuum melting furnace. It is easier to change conditions such as concentration adjustment by preparing an alloy with In or Sn and mixing this alloy with Ga-based liquid metal.

  Since the Ga-based alloy obtained by such a method is in a liquid state at a lower temperature than Ga simple substance (melting point is lowered), it is easy to handle.

  In order to make the Ga-based liquid metal into a highly viscous paste, it is particularly preferable to contain 5 to 30% by mass of Ca. By setting the Ca concentration within this range, it is possible to achieve a viscosity of 5 to 100 Pa · s suitable for various printing methods, and to exhibit a sufficient electron injection function necessary for an organic device as an electrode. Viscosity varies somewhat with the Ca concentration, depending on the type of Ga-based liquid alloy.

  The Ga-based alloy in the present embodiment preferably further includes a metal having a melting point of 300 ° C. or lower, is solid at room temperature, and is in a paste state at a temperature equal to or higher than the melting point. Thus, by further containing a metal having a melting point of 300 ° C. or lower in the Ga-based alloy, a Ga-based alloy that is solid at normal temperature and is in a paste state at a temperature equal to or higher than the melting point can be obtained. By using such a Ga-based alloy for electrode formation, it is not necessary to form the adhesive layer as described above.

  The Ga-based alloy according to the preferred embodiment is solid at room temperature. When heated, it begins to soften at a certain temperature, and when heated further, it transitions to a liquid state through a viscous paste state. In the present specification, the “melting point” means not a temperature at which a metal transitions to a liquid state but a temperature at which softening starts (softening temperature).

  To add a metal having a melting point of 300 ° C. or lower, an alloy of an alkali metal or an alkaline earth metal and In or Sn is dissolved in a liquid Ga-based liquid metal at room temperature to form a paste-like Ga-based alloy. Then, the metal is heated to a temperature at which a metal having a melting point of 300 ° C. or lower is melted, and the metal having a melting point of 300 ° C. or lower is mixed in the paste alloy.

  Examples of the metal having a melting point of 300 ° C. or lower include In, Sn, Bi, and alloys containing these as main components. Among these, InSn can be preferably used. An “alloy” is an apparently uniform metal composed of two or more kinds of metals, and does not necessarily require a metal bond to be formed between different metals.

  Table 2 shows an example of a metal having a melting point of 300 ° C. or lower that can be used for the Ga-based alloy in the present embodiment.

The Ga-based alloy is in a completely liquid state at a high temperature that further exceeds its melting point. Therefore, the “paste state” is considered to be a state in a viscous region between the liquid state and the solid state. In the present embodiment, the temperature range in the paste state is preferably 5 ° C. or higher. By having such a temperature range, the organic device element can be stably manufactured.

  Moreover, it is preferable that the Ga type alloy in this embodiment has melting | fusing point 50 degreeC or more. When the melting point is lower than 50 ° C., the electrode of the manufactured organic device element may be melted and peeled due to environmental change or the like. In order to be solid at normal temperature and to be in a paste state at a temperature equal to or higher than the melting point, and to have the temperature characteristics as described above, it is preferable that 5-30% by mass of Ca is contained in the Ga-based alloy. Note that the viscosity of the paste varies depending not only on the Ca content but also on the type of metal having a melting point of 300 ° C. or lower.

  The Ga-based alloy in the present embodiment melts a Ga-based liquid metal as shown in Table 1 above, a metal having a melting point of 300 ° C. or lower as shown in Table 2 above, and an alkali metal or alkaline earth metal such as Ca. Although obtained by mixing, when Ca is used, in order to prevent combustion and explosion of Ca, it is preferable to melt and mix in a vacuum melting furnace or an inert gas melting furnace.

  Specifically, it is safe to prepare an alloy of In, Sn, and Ca, which is a metal that is easily melted into Ga metal, in a vacuum melting furnace in advance, and to melt these CaIn or CaSn alloy into Ga-based liquid metal. From the viewpoint of surface and handleability, it is preferable.

  When a CaIn or CaSn alloy is immersed in a Ga-based liquid metal, a Ga-based alloy in a paste state at room temperature can be obtained by dissolution. Since this Ga-based alloy has a good electron injection function, for example, when it is applied on the organic EL layer, it exhibits good light emission characteristics. That is, in an organic EL element and other organic device elements, in order to be able to control a larger current, an electrode having a good charge injection efficiency (a positive hole injection efficiency for a positive electrode and an electron injection efficiency for a negative electrode). It is preferable that a metal having a low work function is used for the negative electrode from the viewpoint of easy emission of electrons. In a conventional negative electrode, Al having a work function of 4.2 eV is suitably used as a typical metal. In the Ga-based alloy according to the present embodiment, the work function of Ga is close to 4.3 eV and Al. Therefore, in addition to the advantages as a paste metal, when a Ga-based alloy is used as the negative electrode, the negative electrode is transferred to the EL layer. There is also an advantage that electron injection is good.

  In addition, the work functions of the metals such as In, Sn, Bi, and Ga constituting the Ga-based alloy in this embodiment are 4.1 eV, 4.4 eV, 4.3 eV, 4.3 eV, and Al, respectively. Therefore, the Ga-based alloy in the present embodiment is advantageous not only from the manufacturing aspect of electrode formation as described above but also from the aspect of the electron injection function.

  In the Ga-based alloy in the present embodiment, other metals may be included as necessary. For example, in order to improve the electron injection efficiency of the negative electrode, as a substance having a low work function, other than Ca At least one selected from alkali metals and alkaline earth metals can be mixed in the negative electrode. Among these, one or more metals selected from Li, Na, K, Mg, Rb, Cs, Ba, Be, and Sr are preferable. Moreover, 1 mass% or less is preferable and 0.05-2 mass% is more preferable. If the addition amount is within this range, the paste properties of the Ga-based alloy are not affected. The method for adding these metals is as described above.

-Bi-based alloy On the other hand, as a metal material having a melting point lower than that of the substrates 20 and 21, for example, a Bi alloy in which Al is dispersed in a Bi alloy composed of Bi and at least one of In and Sn. Can be mentioned.
In the alloy, since Al is dispersed in the Bi alloy, the work function can be lowered as compared with the case where only the Bi alloy is used. Therefore, in the organic device according to this embodiment having such a Bi alloy electrode, the electron injection barrier can be reduced at the interface between the Bi alloy electrode and the layer in contact with the Bi alloy electrode, and the electron injection characteristics are improved. It is possible. In addition, since the Bi alloy is composed of Bi and at least one of In and Sn, it can be an organic device that does not contain Pb or Cd and is environmentally friendly. Further, the Bi alloy is composed of Bi and at least one of In and Sn. Usually, since the melting point of the Bi alloy is within a predetermined range, the electrode can be formed by a wet process, and the organic device can be enlarged. The manufacturing cost can be reduced, and damage to the organic layer during electrode formation can be prevented. Moreover, the reliability with respect to an environmental change can be improved.

The Bi alloy used in this embodiment is not particularly limited as long as it is made of at least one of Bi, In, and Sn, and may be made of Bi, In, and Sn. , Bi and In may be used, and Bi and Sn may be used.
In the present specification, “Bi alloy” refers to an alloy containing Bi, and includes not only a Bi-containing alloy having the highest Bi content but also a Bi-containing alloy having the highest In content and Sn content.

The melting point of the Bi alloy may be any temperature at which a Bi alloy electrode can be formed by a wet process without damaging the organic layer, and is preferably in the range of 60 ° C. to 180 ° C., more preferably 70 ° C. It is in the range of ˜160 ° C., more preferably in the range of 72 ° C. to 138 ° C. This is because if the melting point of the Bi alloy is too high, the organic layer may be seriously damaged when forming the Bi alloy electrode. In order to use the organic device stably even in a high temperature environment, it is preferable that the melting point of the Bi alloy is practically within the above range. If the melting point of the Bi alloy is too low, This is because the Bi alloy electrode may be melted. In particular, when the organic device according to the present embodiment is an organic EL element, the organic EL element generates heat during driving. Therefore, when the melting point of the Bi alloy is lower than the above range, the Bi alloy electrode is melted by heat. There is a risk that. Further, when the organic device of the present invention is an organic thin film solar cell, if the melting point of the Bi alloy is lower than the above range, the Bi alloy electrode may be melted by irradiation with sunlight.
Even if Al is added to the Bi alloy, the melting point of the Bi alloy does not change.

  The composition and melting point of the Bi alloy are exemplified in Table 3.

  In the present specification, the composition of Bi, In, and Sn constituting the Bi alloy is the charged mass of each component weighed in advance, or X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) Or the composition measured by the other suitable method is meant.

  The content of Al in the Bi alloy electrode is not particularly limited as long as the electron injection characteristics can be improved, and can be within a range of 0.0001 mass% or more and less than 100 mass%, preferably 0. It is within the range of 0.0001% by mass to 50% by mass, and more preferably within the range of 0.0006% by mass to 10% by mass. This is because if the Al content is too small, the effect of improving the electron injection characteristics may not be sufficiently obtained, and even if the Al content is increased, the effect of improving the electron injection characteristics does not change.

In the present embodiment, it is preferable that the concentration of Al in the Bi alloy electrode increases from the side opposite to the organic layer side toward the organic layer side. With such a configuration, the work function of the Bi alloy electrode can be lowered from the side opposite to the organic layer side toward the organic layer side, and electrons are formed at the interface between the Bi alloy electrode and the layer in contact with the Bi alloy electrode. This is because the injection barrier can be further reduced.
In the Bi alloy, Al is an impurity solute element. The solubility of solute elements is lower in the solid phase than in the liquid. Therefore, solute elements are segregated and concentrated in the liquid as the solidification progresses. That is, the movement of Al during the solidification process occurs because Al as an impurity is segregated during alloy solidification. By using this principle and solidifying from the opposite side of the organic layer, the concentration of Al can be increased from the opposite side of the organic layer toward the organic layer side.
The fact that the concentration of Al in the Bi alloy electrode increases from the side opposite to the organic layer side toward the organic layer side means that the sample is analyzed by X-ray photoelectron spectroscopy (XPS). It can be confirmed by measuring in the depth direction by angle resolution that is inclined with respect to or by measuring the depth direction using ion beam sputtering.

The work function of the Bi alloy electrode is not particularly limited as long as it is lower than the work function of the Bi alloy alone. Further, the lower limit of the work function of the Bi alloy electrode may be about the same as that of Al. Specifically, the work function of the Bi alloy electrode is preferably in the range of 3.9 eV to 4.6 eV, more preferably in the range of 3.9 eV to 4.3 eV, and still more preferably 3.9 eV to 4 eV. Within the range of 1 eV.
In addition, the value of the work function measured using the photoelectron spectrometer AC-3 by Riken Keiki Co., Ltd. was applied to the work function. The measurement was performed based on the energy value at which photoelectrons were emitted from the photoelectron spectrometer AC-3 by forming a layer formed of the material to be measured on the substrate as a single layer. As measurement conditions, it was performed in increments of 0.05 eV with a light amount of 50 nW.

  As a method of adding Al to the Bi alloy, a method of mixing Al with a Bi alloy in a molten state can be used. Specifically, Al can be added to the Bi alloy by immersing Al in an arbitrary shape such as a wire, a rod, a sheet, or a lump in the molten Bi alloy. Even if Al is mixed with the Bi alloy in the molten state, the Al does not melt as long as the melting point of the Bi alloy is reached, so it does not become an alloy but is dispersed in the Bi alloy.

  The method for forming the Bi alloy electrode is not particularly limited as long as it can form an electrode in which Al is dispersed in the Bi alloy, but an electrode material composed of a molten Bi alloy and Al is applied. Is preferably used. If it is a wet process such as a coating method, damage to the organic layer during Bi alloy electrode formation can be prevented. In addition, all layers of the organic device can be formed by a wet process such as a coating method without using a dry process such as a vapor deposition method, which can increase the size of the organic device and reduce the manufacturing cost. it can. Further, the method of applying an electrode material composed of a molten Bi alloy and Al has an advantage that the thickness of the Bi alloy electrode can be easily controlled.

The method of applying an electrode material composed of a molten Bi alloy and Al is not particularly limited as long as it is a method using a coating apparatus having a heating mechanism in a discharge portion such as a nozzle. For example, a method using a dispenser, a spray coating method, a blade coating method, a casting method, a bar coating method, a die coating method, and an ink jet method can be used. In the coating apparatus, it is preferable that the heating mechanism of the discharge unit such as a nozzle is processed with an alloy having excellent stability such as SUS. Furthermore, it is also possible to apply the substrate by immersing the substrate in a molten metal bath.
After applying an electrode material made of a molten Bi alloy and Al, it is cooled to form a Bi alloy electrode.
As an atmosphere at the time of Bi alloy electrode formation, inert gas, such as nitrogen and argon, is mentioned, for example.
Further, in a state where the two substrates 20 and 21 are supported by the spacers 30 described later, an electrode material made of the molten Bi alloy and Al is injected using a capillary phenomenon, and then cooled to form Bi. An alloy electrode may be formed.

The method for forming the electrodes 11 and 12 is not particularly limited, and for example, a dry process such as a sputtering method or a vacuum deposition method may be used, or a wet process such as a coating method may be used.
In addition, in the organic device 100 of this embodiment, since the two substrates 20 and 21 installed so as to sandwich the organic device element 10 are supported by the spacer 30, the organic device element 10 is formed. Space can be designed freely. Therefore, when forming the upper electrode 12 in particular, the formation method can be freely selected.

The thickness of the electrodes 11 and 12 is not particularly limited, and can be appropriately designed according to the type and application of the organic device 100 and the performance required for the electrodes 11 and 12. When the electrode is required to have optical transparency, the thickness of the electrode may be about 10 nm to 1000 nm, and preferably about 20 nm to 500 nm.
On the other hand, as described above, due to the effect of the presence of the spacer 30, the thickness of the electrode can be designed to be thicker than before, and the upper limit is particularly limited as long as it can be formed by coating. However, considering the material utilization efficiency, for example, the thickness of the upper electrode 12 may be about 50 nm to 3000 μm.

-Organic layer The organic layer 13 which comprises the organic device element 10 is arrange | positioned between the two electrodes 11 and 12 which oppose the above-mentioned, and various functions according to the kind of the organic device 100 by electron injection. It is a layer that demonstrates.
The organic layer 13 may be a single layer or a stacked structure in which a plurality of layers are stacked.

For example, when the organic device 100 according to the present embodiment is an organic EL device, examples of the organic layer 13 include a stacked structure in which a hole injection transport layer, an organic light emitting layer, and an electron injection transport layer are sequentially stacked. .
Moreover, when the organic device 100 according to the present embodiment is an organic thin film solar cell, examples of the organic layer 13 include a stacked structure in which a hole extraction layer, a photoelectric conversion layer, and an electron extraction layer are sequentially stacked.
Furthermore, when the organic device 100 according to the present embodiment is an organic transistor, examples of the organic layer 13 include an organic semiconductor layer.

  The details of each layer constituting the organic layer 13 described above, that is, the material, the thickness of the layer, and the manufacturing method thereof are not particularly limited, and each conventionally known layer is appropriately selected. be able to. Therefore, the organic layer 13 may be composed of a high molecular compound having a molecular weight of 1000 or more, or may be composed of a low molecular compound having a molecular weight of less than 1000. Further, the organic layer 13 may be produced by vapor deposition or coating.

  Moreover, in the case where the organic layer 13 in the present embodiment is a laminated structure in which a plurality of layers are laminated, a layer made of an inorganic substance or a metal complex may be included in the plurality of layers. That is, for example, when the organic device 100 according to this embodiment is an organic EL device, the organic layer 13 is a stacked structure in which a hole injection transport layer, an organic light emitting layer, and an electron injection transport layer are sequentially stacked. The hole injecting and transporting layer and the electron injecting and transporting layer may be a layer made of an inorganic material or a metal complex. Furthermore, a charge generation layer may be added as necessary.

-Substrate The organic device 100 according to the present embodiment has two substrates 20 and 21 facing each other. The substrates 20 and 21 play a role of supporting or sealing the organic device element 10 described above.

Such substrates 20 and 21 may be flexible substrates or rigid substrates.
The substrates 20 and 21 may or may not have optical transparency, and are appropriately selected according to the type and application of the organic device 100 according to the present embodiment.

The material of the substrates 20 and 21 is appropriately selected according to the type and application of the organic device 100. For example, glass such as quartz, alkali glass and non-alkali glass, these thin glasses, polyethylene, and polypropylene , Polyethylene terephthalate, polymethacrylate, polymethyl methacrylate, polymethyl acrylate, polyester, polycarbonate, polyethersulfone, polyetheretherketone, polyvinyl fluoride, polyolefin, fluorine resin, and SUS substrate. .
Further, the substrates 20 and 21 may be not only a single layer but also a laminated structure in which a plurality of the above-described materials are laminated. In particular, when a resin is used as the first substrate 20, a structure in which a barrier layer for preventing intrusion of water or oxygen is preferably laminated.
Although the thickness of the board | substrates 20 and 21 is not specifically limited, Usually, it is about 0.5 mm-2.0 mm.

-Spacer The organic device 100 according to the present embodiment is disposed between the two substrates 20 and 21 described above, and has a spacer 30 for supporting the two substrates 20 and 21. To do. This embodiment changes the conventional idea of covering an organic device element using a substrate that has been “spotted”, and supports two substrates that are installed so that the organic device element is sandwiched by spacers. It is novel in terms.

The shape of the spacer 30 is not particularly limited as long as it is a shape capable of supporting the above-described effects, that is, the two substrates 20 and 21, and can be appropriately designed. Specifically, for example, in addition to the columnar shape as shown in FIG. 1, a spherical shape, a wall shape, or a shape in which particles are stacked can be employed. Further, even in the case of a columnar shape, a trapezoidal shape or a columnar shape may be used in addition to the rectangular shape as shown in FIG.
Further, the height of the spacer 30 is not particularly limited, and the distance between the two substrates 20 and 21, in other words, the organic device element sandwiched between the two substrates 20 and 21. In consideration of the size of 10, it can be designed freely. Specifically, for example, the thickness may be about 1 μm to 3000 μm.

  The material of the spacer 30 is not particularly limited. For example, various resins that can be used in the substrates 20 and 21, that is, polyethylene, polypropylene, polyethylene terephthalate, polymethacrylate, polymethyl methacrylate, polymethyl acrylate, polyester, polycarbonate, polyethersulfone, polyetheretherketone, polyfluoride. Resins such as vinyl, polyolefin, and fluorine-based resins may be used, while inorganic materials such as silica, alkali-free glass, quartz glass, soda-lime glass, borosilicate glass, and titanium barium-based glass may be used.

  Moreover, even if it exists in the formation method of the spacer 30, it does not specifically limit, It can select suitably from a conventionally well-known formation method. For example, the spacers 30 may be manufactured separately and installed on the substrates 20 and 21 using an adhesive, and the spacers 30 may be formed simultaneously with the formation of the substrates 20 and 21. Furthermore, a thick substrate material may be prepared and the spacer 30 may be formed by etching or the like. When an adhesive is used, the adhesive may be a thermosetting adhesive or a photocurable adhesive.

  The timing for forming the spacers 30 is not particularly limited. For example, the organic device element 10 is formed on the lower substrate 20, then the spacer 30 is formed on the lower substrate 20, and finally the upper substrate 21 is placed, and the upper substrate 21, the spacer 30, And the order of the formation of the organic device element 10 and the formation of the spacer 30 may be interchanged. Furthermore, a spacer 30 may be provided on the upper substrate 21 and finally bonded to the lower substrate 20.

  Next, the position where the spacer is provided will be described.

  FIG. 2 is a schematic front view of the organic device shown in FIG.

The spacers 30 do not have to be formed so as to completely surround the organic device element 10, and may be provided only at the four corners as shown in FIG. The spacer 30 forms a space in which the organic device element 10 is installed by supporting the substrates 20 and 21 provided so as to sandwich the organic device element 10. The installation location is not particularly limited.
In this manner, by providing the spacers 30 with a predetermined space therebetween, various layers constituting the organic device element 10 can be formed using the space between the spacers 30 (see arrows in FIG. 2), A desiccant can be installed using a space existing between the substrates 20 and 21.
On the other hand, although not illustrated, for example, a spacer may be provided in a wall shape so as to surround the periphery of the organic device element 10. Thus, by providing a spacer in the shape of a wall, the airtightness of the organic device element 10 can be improved, and moisture or the like can be prevented from entering the organic device element 10.

  FIG. 3 is a schematic front view of an organic device according to another embodiment of the present invention. In addition, the same code | symbol is used about the same structure as FIG.

  As shown in FIG. 3, the organic device according to this embodiment may be so-called “multi-faceted”, that is, a plurality of organic device elements 10, 10. In this case, the spacer 30 can be appropriately installed between the organic device elements 10.

  FIG. 4 is a schematic cross-sectional view of an organic device according to another embodiment of the present invention. In addition, the same code | symbol is used about the same structure as FIG.

As shown in FIG. 4, in the organic device 100 according to this embodiment, the desiccant 40 is disposed in a space existing between the two substrates 20 and 21 supported by the spacer 30.
Thus, in the organic device 100 according to the present embodiment, as described above, an appropriate space can be created between the substrates 20 and 21 by appropriately designing the installation position of the spacer. It can be used effectively. By disposing the desiccant 40 in the space, the organic device element 10 can be prevented from being affected by moisture, and the life of the organic device element 10 can be extended.

The desiccant 40 is not particularly limited, and can be appropriately selected from various desiccants already used in the field of organic devices.
Also, the arrangement method of the desiccant 40 is not particularly limited, and may be arranged by adhering the desiccant 40 to the upper substrate 21 as shown in FIG. Although not shown, a desiccant may be installed on the lower substrate 20 or may be installed on both the substrates 20 and 21.

  FIG. 5 is a schematic cross-sectional view of an organic device according to another embodiment of the present invention. In addition, the same code | symbol is used about the same structure as FIG.

As shown in FIG. 5, in the organic device 100 according to the present embodiment, the counterbore 22 is provided on the upper substrate 21 constituting the organic device 100, and the desiccant 40 is disposed on the counterbore 22. Yes. Thus, the spot 22 may be provided in a part of the substrate 21 and the desiccant 40 may be disposed in the part. By providing the counterbore part 22 and disposing the desiccant 40 in the part, it becomes difficult for the organic device 10 and the desiccant to come into contact with each other, and the yield during manufacturing can be improved.
Even in this case, although not illustrated, a counterbore part may be provided on the lower substrate 20 and a desiccant may be provided on the counterbore part, or a counterbore part may be provided on both the substrates 20 and 21. You may install a desiccant in a part.

DESCRIPTION OF SYMBOLS 100 ... Organic device 10 ... Organic device element 11, 12 ... Electrode 13 ... Organic layer 20, 21 ... Substrate 30 ... Spacer 40 ... Drying material

Claims (3)

An organic device element comprising two opposing electrodes and an organic layer disposed between the two electrodes;
Two opposing substrates arranged so as to sandwich the organic device element,
The organic device, wherein the two substrates are supported by a spacer disposed therebetween.   The organic device according to claim 1, wherein a desiccant is further disposed between the two substrates.   The organic device according to claim 1, wherein at least one of the two electrodes constituting the organic device element is formed of a metal material having a melting point lower than that of the substrate.

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