JP2015165542A - 半導体装置を製造する方法及び半導体装置 - Google Patents
半導体装置を製造する方法及び半導体装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 238000000034 method Methods 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 54
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 3
- 239000012535 impurity Substances 0.000 claims description 36
- 238000005516 engineering process Methods 0.000 abstract description 4
- 206010016803 Fluid overload Diseases 0.000 abstract 1
- 210000000746 body region Anatomy 0.000 description 15
- 238000010586 diagram Methods 0.000 description 11
- 238000005224 laser annealing Methods 0.000 description 11
- 238000002513 implantation Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
(特徴1)半導体装置が、IGBTのコレクタ領域であって、表面に露出するp型のコレクタ領域と、ダイオードのカソード領域であって、前記表面に露出するとともにコレクタ領域に隣接するn型のカソード領域と、コレクタ領域及びカソード領域に対して深い側から隣接するとともにカソード領域よりもn型不純物濃度が低いn型のバッファ領域と、バッファ領域に対して深い側から隣接するとともにバッファ領域よりもn型不純物濃度が低いn型のドリフト領域を有する。なお、「深い側」とは、表面(すなわち、コレクタ領域及びカソード領域が露出している表面)から遠い側を意味する。
(特徴2)酸化膜を形成するステップと表面を加熱するステップが実施される範囲が、カソード領域とコレクタ領域の境界近傍のコレクタ領域の表面を含む。なお、特徴2は、前記2つのステップの実施時にカソード領域及びコレクタ領域が形成されていることを限定するものではなく、上記2つのステップが実施される範囲が、最終的に製造される半導体装置のカソード領域とコレクタ領域に対して上記の関係を満たしていればよい。したがって、前記2つのステップの実施時にカソード領域及びコレクタ領域が形成されていなくてもよい。
(特徴3)半導体装置において、コレクタ領域がカソード領域を取り囲むように配置されている。酸化膜を形成するステップと表面を加熱するステップが実施される範囲が、カソード領域を取り囲むようにコレクタ領域の表面に配置されている。なお、特徴3は、前記2つのステップの実施時にカソード領域及びコレクタ領域が形成されていることを限定するものではなく、上記2つのステップが実施される範囲が、最終的に製造される半導体装置のカソード領域とコレクタ領域に対して上記の関係を満たしていればよい。したがって、前記2つのステップの実施時にカソード領域及びコレクタ領域が形成されていなくてもよい。
(特徴4)酸化膜を形成するステップと表面を加熱するステップが実施される範囲に、カソード領域の少なくとも一部の表面が含まれていない。カソード領域の前記少なくとも一部の表面の酸化膜を除去するステップと、酸化膜除去後のカソード領域の前記少なくとも一部の表面を加熱するステップをさらに有する。電極を形成するステップでは、加熱後のカソード領域の前記少なくとも一部の表面にも電極を形成する。なお、特徴4は、酸化膜を形成するステップと表面を加熱するステップの実施時にカソード領域が形成されていることを限定するものではなく、これら2つのステップが実施される範囲が、最終的に製造される半導体装置のカソード領域に対して上記の関係を満たしていればよい。したがって、前記2つのステップの実施時にカソード領域が形成されていなくてもよい。
(特徴5)溝が、カソード領域の近傍にのみ形成されている。
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
12:半導体基板
12a:上面
12b:下面
14:上部電極
16:下部電極
20:エミッタ領域
22:ボディ領域
28:ドリフト領域
30:バッファ領域
32:コレクタ領域
34:アノード領域
36:カソード領域
40:ゲート絶縁膜
42:ゲート電極
50:絶縁膜
52:制御電極
60:溝
62:酸化膜
90:IGBT領域
92:ダイオード領域
Claims (7)
- 半導体装置を製造する方法であって、
半導体基板の表面をアンモニア過水に曝すことで、前記表面に酸化膜を形成するステップと、
光を照射することによって前記酸化膜に覆われた前記表面を加熱することで、前記表面に溝を形成するステップと、
前記酸化膜を除去して前記表面を露出させるステップと、
露出させた前記表面に電極を形成するステップ、
を有する方法。 - 前記半導体装置が、
IGBTのコレクタ領域であって、前記表面に露出するp型のコレクタ領域と、
ダイオードのカソード領域であって、前記表面に露出するとともに前記コレクタ領域に隣接するn型のカソード領域と、
前記コレクタ領域及び前記カソード領域に対して深い側から隣接するとともに前記カソード領域よりもn型不純物濃度が低いn型のバッファ領域と、
前記バッファ領域に対して深い側から隣接するとともに前記バッファ領域よりもn型不純物濃度が低いn型のドリフト領域、
を有する請求項1の方法。 - 前記酸化膜を形成する前記ステップと前記表面を加熱する前記ステップが実施される範囲が、前記カソード領域と前記コレクタ領域の境界近傍の前記コレクタ領域の表面を含む請求項2の方法。
- 前記半導体装置において、前記コレクタ領域が前記カソード領域を取り囲むように配置されており、
前記酸化膜を形成する前記ステップと前記表面を加熱する前記ステップが実施される範囲が、前記カソード領域を取り囲むように前記コレクタ領域の表面に配置されている請求項2または3の方法。 - 前記酸化膜を形成する前記ステップと前記表面を加熱する前記ステップが実施される範囲に、前記カソード領域の少なくとも一部の表面が含まれておらず、
前記カソード領域の前記少なくとも一部の表面の酸化膜を除去するステップと、
酸化膜除去後の前記カソード領域の前記少なくとも一部の表面を加熱するステップ、
をさらに有し、
前記電極を形成するステップでは、加熱後の前記カソード領域の前記少なくとも一部の表面にも電極を形成する、
請求項2〜4の何れか一項の方法。 - IGBTとダイオードが形成された半導体基板を有する半導体装置であって、
半導体基板が、
前記ダイオードのカソード領域であって、前記半導体基板の表面に露出するn型のカソード領域と、
前記IGBTのコレクタ領域であって、前記表面に露出し、前記カソード領域に隣接し、前記カソード領域を取り囲むように配置されているp型のコレクタ領域と、
前記コレクタ領域及び前記カソード領域に対して深い側から隣接するとともに前記カソード領域よりもn型不純物濃度が低いn型のバッファ領域と、
前記バッファ領域に対して深い側から隣接するとともに前記バッファ領域よりもn型不純物濃度が低いn型のドリフト領域、
を有し、
前記コレクタ領域の表面に、前記カソード領域の周囲を取り囲む溝が形成されており、
前記コレクタ領域の前記表面と前記カソード領域の表面に、電極が形成されている、
半導体装置。 - 前記溝が、前記カソード領域の近傍にのみ形成されている請求項6の半導体装置。
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CN104037208B (zh) * | 2014-06-24 | 2017-09-26 | 江苏中科君芯科技有限公司 | 一种双模式绝缘栅晶体管 |
CN108122962B (zh) * | 2017-12-04 | 2020-07-31 | 西南交通大学 | 一种绝缘栅双极型晶体管 |
CN108649068B (zh) * | 2018-06-29 | 2021-07-09 | 中国科学院微电子研究所 | Rc-igbt器件及其制备方法 |
JP7070303B2 (ja) * | 2018-10-04 | 2022-05-18 | 三菱電機株式会社 | 半導体装置 |
JP7354897B2 (ja) * | 2020-03-26 | 2023-10-03 | 三菱電機株式会社 | 半導体装置 |
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WO2008081724A1 (ja) * | 2006-12-28 | 2008-07-10 | Tokyo Electron Limited | 絶縁膜の形成方法および半導体装置の製造方法 |
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