JP2015141932A - Wiring board, and multilayer wiring board with the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wiring board which improves connectivity, and to provide a multilayer wiring board employing the same.SOLUTION: A wiring board 5 includes: a plurality of laminated insulation layers 1; and a thin film multilayer part 4 including through conductors 3 provided in the insulation layers 1 and wiring layers 2 provided between the plurality of insulation layers 1 and electrically connected to the through conductors 3. In at least one layer gap among layer gaps of the plurality of insulation layers 1 in the thin film multilayer part 4, the wiring layer 2 and the through conductor 3 are electrically connected via a junction member 7 disposed therebetween, and the insulation layers 1 are adhered via a resin adhesion layer 8 disposed therebetween. The junction member 7 includes a main body part 7a and a protruding part 7b. The protruding part 7b protrudes from the main body part 7a in a layer direction of the insulation layer 1 closer to the junction with the wiring layer 2. The resin adhesion layer 8 is disposed between the protruding part 7b and the insulation layer 1.

Description

  The present invention relates to a thin film multilayer including a plurality of laminated insulating layers, a through conductor provided in the insulating layer, and a wiring layer provided between the plurality of insulating layers and electrically connected to the through conductor. The present invention relates to a wiring board having a portion and a multilayer wiring board having the same.

  Conventionally, as a multilayer wiring board for connecting a semiconductor element to a terminal on the upper surface and electrically connecting a connection pad on the lower surface electrically connected to the terminal to an external electric circuit, a plurality of thin film wiring layers and a plurality of wiring layers are provided. There is known a multilayer wiring substrate in which a wiring substrate having thin film multilayer portions in which resin insulating layers are alternately laminated is disposed on the upper surface of a substrate such as a ceramic substrate. Such a multilayer wiring board is used, for example, as a so-called probe card board for performing an electrical check of a semiconductor element.

  In such a multilayer wiring board, for example, a metalized wiring layer made of a metal material such as tungsten and a wiring conductor such as a through conductor are arranged on the upper and lower surfaces and inside of an insulating base made of an aluminum oxide sintered body or the like. It is a structured. The thin film wiring layer formed exposed on the upper surface of the thin film multilayer portion functions as a terminal connected to the semiconductor element, and the wiring conductor formed on the lower surface of the ceramic substrate functions as a connection pad for external connection.

  For example, after the multilayer structure in which the insulating layers and the wiring layers are alternately laminated is manufactured separately, the connection bumps of the multilayer structure and the via holes of the multilayer structure are superposed and bonded to each other. As a result, a wiring substrate having a thin film multilayer portion is formed. An example of such a multilayer wiring board is disclosed in Patent Document 1.

Japanese Patent Laid-Open No. 06-69652

  However, in the multilayer wiring board described above, the connection bumps of the multilayer structure manufactured separately and the via holes of the multilayer structure are overlapped and bonded to each other, and an unbonded portion is interposed between the connection bumps and the via holes. Occurs, and the adhesive strength tends to decrease. As a result, the multilayer wiring board has a problem in that peeling is likely to occur between layers of separately manufactured laminated structures.

  The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a separately manufactured structure by disposing a joining member including a protruding portion between a wiring layer and a through conductor. An object of the present invention is to provide a multilayer wiring board capable of improving the connectivity between layers.

A wiring board according to one aspect of the present invention electrically connects a plurality of laminated insulating layers, a through conductor provided in the insulating layer, and a plurality of through conductors provided between the plurality of insulating layers. A wiring substrate having a thin film multilayer portion including a connected wiring layer, wherein at least one of the plurality of insulating layers of the thin film multilayer portion, the wiring layer and the through conductor are: The insulating layers are electrically connected to each other via a bonding member disposed between them, and the insulating layers are bonded to each other via a resin adhesive layer disposed between the main body portion and the protruding portion. The protruding portion protrudes from the main body portion in the layer direction of the insulating layer on the joint portion side with the wiring layer, and the resin adhesive layer is disposed between the protruding portion and the insulating layer. It is characterized by being provided.

  According to the wiring board of the present invention, it is possible to improve the connectivity between layers of separately manufactured structures by disposing the bonding member including the protruding portion between the wiring layer and the through conductor.

(A) is sectional drawing which shows the wiring board and multilayer wiring board in embodiment of this invention, (b) is sectional drawing which expands and shows the A section of the wiring board shown by (a). . (A) is sectional drawing which shows the other example of the wiring board in embodiment of this invention, and a multilayer wiring board, (b) expands and shows the B section of the wiring board shown to (a). It is sectional drawing. It is sectional drawing which shows the other example of the wiring board in embodiment of this invention, and a multilayer wiring board. (A)-(d) is explanatory drawing for demonstrating the manufacturing method of the wiring board and multilayer wiring board in embodiment of this invention.

  Hereinafter, a wiring board and a multilayer wiring board according to embodiments of the present invention will be described with reference to the drawings. Note that the drawings used in the following description are schematic, and the dimensional ratios and the like on the drawings do not necessarily match the actual ones. For convenience of explanation, the wiring board and the multilayer wiring board define the orthogonal coordinate system XYZ, and the term “upper surface (front surface)” or “lower surface” is used appropriately with the positive side in the Z direction as the upper side.

  In the description of the embodiments and the like, components that are the same as or similar to those already described may be assigned the same reference numerals and descriptions thereof may be omitted.

<Embodiment 1>
A wiring board 5 and a multilayer wiring board 11 according to a first embodiment (referred to as Embodiment 1) of the present invention will be described below with reference to FIG.

  The wiring board 5 according to the first embodiment has a configuration as shown in FIG. The multilayer wiring board 11 includes a ceramic substrate 6 and a wiring substrate 5 laminated on the ceramic substrate 6.

  The wiring board 5 includes a plurality of laminated insulating layers 1, a through conductor 3 provided in the insulating layer 1, and a wiring electrically connected to the through conductor 3 provided between the plurality of insulating layers 1. A thin film multilayer portion 4 including the layer 2 is included. In the wiring board 5, the wiring layer 2 and the through conductor 3 are electrically connected to each other through a bonding member 7 disposed between at least one of the plurality of insulating layers 1 of the thin film multilayer portion 4. The insulating layers 1 are bonded to each other via a resin adhesive layer 8 disposed therebetween. The bonding member 7 includes a main body portion 7a and a protruding portion 7b. The protruding portion 7b protrudes in the layer direction of the insulating layer 1 from the main body portion 7a on the bonding portion side with the wiring layer 2, and the protruding portion 7b. A resin adhesive layer 8 is disposed between the insulating layer 1 and the insulating layer 1. The protrusion 7 b of the bonding member 7 is separated from the surface (upper surface) of the insulating layer 1.

  The multilayer wiring substrate 11 includes a wiring substrate 5 having a thin film multilayer portion 4 and a ceramic substrate 6, and the wiring substrate 5 is laminated on the ceramic substrate 6.

The wiring board 5 has a structure in which the thin-film multilayer portion 4 has the insulating layers 1 and the wiring layers 2 alternately stacked. A wiring layer 2 is provided on the surface of each insulating layer 1, and the wiring layer 2 is provided between the plurality of insulating layers 1 through a through conductor 3 penetrating in the vertical direction in the insulating layer 1. They are electrically connected to each other. In FIG. 1, the thin film multilayer part 4 is comprised by the 1st-4th insulating layers 1a-1d. The plurality of insulating layers 1 are bonded to each other via an insulating interlayer adhesive layer 4a.

  Further, the ceramic substrate 6 has a function of ensuring the overall rigidity of the multilayer wiring substrate 11. By providing the ceramic substrate 6 with the wiring substrate 5 having the thin film multilayer portion 4, the wiring substrate 5 having the thin film multilayer portion 4 including the fine wiring layer 2 corresponding to the electrode of the semiconductor element or the like on the highly rigid ceramic substrate 6. Therefore, the multilayer wiring board 11 that can be used for a probe card or the like can be formed.

  Further, in the thin film multilayer portion 4, the through conductor 3 and the wiring layer 2 penetrating the insulating layer 1 in the thickness direction are used to connect an electrode of a semiconductor element or the like mounted on the wiring substrate 5 to an external electric circuit such as a printed circuit board (see FIG. This is a portion that becomes a conductive path to be electrically connected to (not shown). For example, when a semiconductor element is mounted on the center of the upper surface of the thin film multilayer portion 4 and the electrode is electrically connected to the through conductor 3 exposed on the uppermost surface of the thin film multilayer portion 4 via solder or a probe. The electrodes of the semiconductor element are electrically connected to the lowermost wiring layer 2 of the thin film multilayer portion 4 through the wiring layer 2 and the through conductor 3. Then, if the lowermost wiring layer 2 of the thin film multilayer portion 4 is electrically connected to an external electric circuit through a wiring conductor 9 formed in advance on the ceramic substrate 6, for example, an electrode of the semiconductor element And an external electric circuit are electrically connected.

  As shown in FIG. 1, the ceramic substrate 6 is formed in the same shape and dimensions as the thin film multilayer portion 4 in plan view. That is, the multilayer wiring board 11 is, for example, a square plate or a disk as a whole, and the upper surface is mounted with an electronic component such as a semiconductor element for mounting or electrical checking (the semiconductor element is electrically connected to the multilayer wiring board 11). It is used as a part for mounting to make a semiconductor device by connecting mechanically and mechanically, or for temporary placement for conducting an electrical check on a semiconductor element. Examples of the semiconductor element include a semiconductor integrated circuit element such as an IC or LSI, or a micromachine (a so-called MEMS element) in which a minute electromechanical mechanism is formed on the surface of a semiconductor substrate.

  Here, the wiring board 5 will be described below.

  In the thin film multilayer portion 4, the insulating layer 1 functions as a base material for forming the wiring layer 2. Further, the insulating layer 1 functions as an insulating material for ensuring electrical insulation between the wiring layers 2. The insulating layer 1 is made of a resin material, for example, a rectangular shape such as a rectangular shape or a square shape, or a circular shape, and is formed in a layer shape with a thickness of, for example, 120 (μm) to 185 (μm). .

  In addition, as shown in FIG. 1, the plurality of insulating layers 1 have the same outer dimensions and shapes in plan view, and are laminated so that the outer surface of the wiring substrate 5 does not have irregularities. As described above, the thin film multilayer portion 4 has a laminated structure in which a plurality of insulating layers 1 are laminated, and the plurality of laminated insulating layers 1 are insulating base portions (in the thin film multilayer portion 4 ( For example, an electronic component (not shown) such as a semiconductor element is mounted on the upper surface, and the lower surface is attached to a highly rigid substrate such as the ceramic substrate 6.

  The insulating layer 1 is made of, for example, an insulating resin material such as an epoxy resin, a polyimide resin, a polyamideimide resin, a polyetherimide resin, or a liquid crystal polymer.

A wiring layer 2 is formed on the surface of the insulating layer 1, and the wiring layer 2 is made of, for example, a metal material such as copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cobalt, or titanium, or these It is made of an alloy material of a metal material. Further, the wiring layer 2 has a thickness of, for example, 3 (μm) to 25 (μm).

  The wiring layer 2 is formed by depositing the above metal material on the surface such as the upper surface of the insulating layer 1 using a sputtering method, a vapor deposition method, a plating method, or the like, and performing a trimming process such as masking or etching as necessary. Thus, it can be formed on the surface of the insulating layer 1 in a predetermined pattern.

The through conductor 3 penetrates a part of the insulating layer 1 in the thickness direction by using a drilling method such as laser processing with a CO ₂ laser or YAG laser, RIE (reactive ion etching) or etching with a solvent. It is possible to form by forming a hole (no symbol) and filling the through hole with a conductive material to be the through conductor 3 by using a method such as sputtering, vapor deposition, plating, or filling of a conductive paste. it can.

  The through conductor 3 is made of, for example, a metal material such as copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cobalt, titanium, or tungsten, or an alloy material of these metal materials.

  The through conductor 3 is provided in the insulating layer 1 and is electrically connected to the wiring layer 2 provided between the plurality of insulating layers 1. Further, the through conductor 3 has, for example, a circular shape having a diameter of 20 (μm) to 60 (μm), for example, in a plan view, and is provided inside the insulating layer 1 in a cylindrical shape. Further, the through conductor 3 is not limited to a circular shape in plan view, and may be an elliptical shape or a rectangular shape.

  By forming the wiring layer 2 and the through conductor 3 on the insulating layer 1 and laminating the insulating layer 1 on the thin film multilayer portion 4 as many layers as necessary, the thin film multilayer portion 4 composed of the plurality of insulating layers 1 is formed. . Further, as shown in FIG. 1, the upper and lower insulating layers 1 are bonded to each other via an insulating interlayer adhesive layer 4a. The insulating interlayer adhesive layer 4a is made of, for example, a material such as epoxy resin, polyphenylene ether resin, polyimide resin, polyquinoline resin, polyamideimide resin, or fluorine resin.

  As shown in FIG. 1, the wiring board 4 has a thin film multilayer portion 4 having a recess in the uppermost insulating layer 1, and is formed on the surface of the through conductor 3 in the recessed portion of the uppermost insulating layer 1. Is provided with a plating layer 12 for corrosion prevention or probe connectivity. Specifically, the plating layer 12 is preferably formed by sequentially forming a nickel plating layer having a thickness of about 1 (μm) to 10 (μm) and a gold plating layer having a thickness of about 0.1 (μm) to 3 (μm). .

  The uppermost insulating layer 1 may be configured such that the wiring layer 2 is provided on the surface (upper surface) of the uppermost insulating layer 1. In that case, a nickel plating layer and a gold plating layer may be sequentially formed on the upper surface of the wiring layer 2 of the insulating layer 1.

  In FIG. 1, the thin film multilayer portion 4 is composed of four insulating layers 1 (four insulating layers 1 including the first to fourth insulating layers 1a to 1d), and the resin adhesive layer 8 is interposed therebetween. The first insulating layer 1a is disposed on the lower side, and the second to fourth insulating layers 1b to 1d are disposed on the upper side.

Moreover, in FIG. 1, the resin adhesive layer 8 is at least one of the plurality of insulating layers 1 of the thin film multilayer portion 4, that is, the interlayer between the first insulating layer 1a and the second insulating layer 1b. Is provided. Then, the wiring layer 2 of the second insulating layer 1b located above and the through conductor 3 of the first insulating layer 1a located below are joined between each other with the resin adhesive layer 8 interposed therebetween. It is electrically connected via the member 7. Moreover, the 1st insulating layer 1a and the 2nd insulating layer 1b are mutually adhere | attached through the resin contact bonding layer 8 arrange | positioned between. The resin adhesive layer 8 is made of a material such as an epoxy resin, a polyphenylene ether resin, a polyimide resin, a polyquinoline resin, a polyamideimide resin, or a fluorine resin, and has a thickness of, for example, 5 (μm) to 20 (μm). is there.

  As shown in FIG. 1, the joining member 7 includes a main body portion 7a and a protruding portion 7b. The bonding member 7 has a main body portion 7a provided on the upper surface of the through conductor 3 of the first insulating layer 1a, and the lower surface of the main body portion 7a is located in the same plane as the upper surface of the first insulating layer 1a. The lower surface of the main body portion 7a and the upper surface of the through conductor 3 are joined to each other. In addition, in the bonding member 7, the upper surface of the protruding portion 7b is bonded to the wiring layer 2 of the second insulating layer 1b. The protruding portion 7b protrudes from the main body portion 7a in the layer direction of the first insulating layer 1a or the second insulating layer 1b on the joint portion side with the wiring layer 2, and the surface (upper surface) of the first insulating layer 1a. It is away from. That is, the protrusion 7b is provided at an upper position away from the surface (upper surface) of the first insulating layer 1a. The “layer direction” refers to a direction parallel to the XY plane in FIGS. 1 to 4.

  As shown in FIG.1 (b), the distance L of the surface (upper surface) of the 1st insulating layer 1a and the protrusion part 7b is 5 (micrometer)-15 (micrometer), for example. Moreover, the protrusion part 7b protrudes from the main-body part 7a with the length of 10 (micrometer)-20 (micrometer), for example. The joining member 7 is made of, for example, a metal material such as tin, copper, or silver, or an alloy material of these metal materials. The joining member 7 can be made of a solder material such as a gold-tin alloy, a tin-silver alloy, or a tin-copper alloy.

  Further, the protruding portion 7b has a convex shape, that is, a convex shape in a longitudinal sectional view, and has an umbrella shape that expands downward. Thus, the protruding portion 7b has a curved shape, that is, a curved shape in a longitudinal sectional view, and is between the upper surface of the protruding portion 7b and the second insulating layer 1b or the wiring layer 2 of the second insulating layer 1b. Since the resin adhesive layer 8 is disposed on the surface and the bonding area between the bonding member 7 and the resin adhesive layer 8 is increased, the connectivity between the insulating layers 1 positioned above and below can be improved. In addition, the protrusion part 7b should just protrude in the layer direction of the 1st insulating layer 1a or the 2nd insulating layer 1b from the main-body part 7a, the upper surface joining to the wiring layer 2 of the 2nd insulating layer 1b. For example, the shape may be a quadrangular shape or the like in a longitudinal sectional view.

  As shown in FIG. 1, the protruding portion 7b is separated from the first insulating layer 1a, and the resin adhesive layer 8 is disposed between the protruding portion 7b and the surface (upper surface) of the first insulating layer 1a. It is installed. As described above, the resin adhesive layer 8 is provided so as to surround the outer periphery of the main body portion 7 a of the bonding member 7. A resin adhesive layer 8 is also disposed between the upper surface of the protruding portion 7b and the lower surface of the second insulating layer 1b or the wiring layer 2.

  As described above, in the wiring substrate 5 of the first embodiment, the wiring layer 2 and the through conductor 3 are disposed between at least one of the plurality of insulating layers 1 of the thin film multilayer portion 4. The insulating layers 1 (the first insulating layer 1a and the second insulating layer 1b) are electrically connected via the bonding member 7, and are bonded to each other via the resin adhesive layer 8 disposed therebetween. The bonding member 7 includes a main body portion 7a and a protruding portion 7b. The protruding portion 7b is bonded to the wiring layer 2 and protrudes in the layer direction of the insulating layer 1 from the main body portion 7a. A resin adhesive layer 8 is disposed between the protruding portion 7 b and the insulating layer 1 and spaced from the surface.

Accordingly, the wiring board 5 protrudes from the main body portion 7a in the layer direction of the first insulating layer 1a or the second insulating layer 1b and is separated from the surface (upper surface) of the first insulating layer 1a in the thin film multilayer portion 4. Since the resin adhesive layer 8 is disposed between the protruding portion 7b and the insulating layer 1, the connectivity between the first insulating layer 1a and the second insulating layer 1b positioned above and below is provided. Can be improved. That is, in the bonding member 7, the protruding portion 7 b protrudes along the XY plane of the resin bonding layer 8, so that the protruding portion 7 b functions as a wedge, and the first insulating layer 1 a and the second insulating layer 7. Since the peeling force acting in the Z direction can be suppressed between the layer 1b and the layer 1b, the connectivity between the first insulating layer 1a and the second insulating layer 1b can be improved.

  As described above, in the wiring substrate 5 according to the first embodiment, the upper and lower insulating layers 1 are connected to each other through the resin adhesive layer 8 in at least one of the plurality of insulating layers 1 of the thin film multilayer portion 4. The wiring layer 2 of the upper second insulating layer 1b and the through conductor 3 of the lower first insulating layer 1a are disposed between the wiring layer 2 and the through conductor 3 while being bonded to each other. When the connection members 7 are electrically connected to each other, it is effective in improving the productivity as the wiring board 5, and the bonding member 7 has a protruding portion 7 b, and the protruding portion 7 b Since the resin adhesive layer 8 is disposed between the first insulating layer 1a and the first insulating layer 1a, the connectivity between the first insulating layer 1a and the second insulating layer 1b can be improved.

  That is, in FIG. 1, the wiring substrate 5 includes a first insulating layer 1 a (referred to as a first block) and a stacked body (referred to as a second block) including the second to fourth insulating layers 1 b to 1 d. Produce separately. The first block includes the joining member 8, and the second block includes the resin adhesive layer 8. Since the thin film multilayer portion 4 can be produced by adhering the first block and the second block via the resin adhesive layer 8, the wiring board 5 can easily increase the productivity.

  In other words, the thin film multilayer portion 4 is not manufactured by, for example, sequentially laminating the resin insulating layer 1 or the like on the upper surface of the ceramic substrate 6, but the insulating layer 1 or the like is formed by a plurality of blocks (in the first embodiment). , Two blocks including a first block and a second block) can be manufactured in parallel, so that productivity can be improved. Further, since the electrical connection between the first block and the second block uses the bonding member 7 having the protruding portion 7b, the connectivity between the layers of the insulating layer 1 can be improved between the blocks. .

  The present invention is not limited to the wiring substrate 5 or the multilayer wiring substrate 11 of the above-described first embodiment, and various modifications and improvements can be made without departing from the scope of the present invention. Hereinafter, other embodiments will be described. Of the wiring boards and multilayer wiring boards according to the other embodiments, the same parts as those of the wiring board 5 and the multilayer wiring board 11 according to the first embodiment are denoted by the same reference numerals and description thereof is omitted as appropriate. To do.

<Embodiment 2>
A wiring board 5A and a multilayer wiring board 11A according to a second embodiment (referred to as a second embodiment) of the present invention will be described below with reference to FIG.

  In the wiring substrate 5A of the second embodiment, the through conductor 3 is formed so that the upper surface is located inside the first insulating layer 1a as shown in FIG. 2, and the joining member 7A is composed of the main body portion 7a. Is located inside the insulating layer 1. That is, the joining member 7A is provided so that a part of the main body part 7a, that is, the lower end part of the main body part 7a is embedded in the first insulating layer 1a.

  As shown in FIG. 2B, in the joining member 7A, the distance L1 between the upper surface of the first insulating layer 1a and the lower surface of the main body portion 7a is, for example, in the range of 1 (μm) to 8 (μm). It is provided so that it may be located in.

  In this way, since the bonding member 7A has a part of the main body 7a located inside the insulating layer 1, the wiring member 5 can be connected to the through conductor 3 even if stress is applied to the bonding member 7A. The connection reliability between the joining member 7A and the through conductor 3 can be improved.

  Further, in the wiring substrate 5 of the first embodiment, the thin film multilayer portion 4 is a laminate (first layer) composed of the first insulating layer 1a (referred to as the first block) and the second to fourth insulating layers 1b to 1d. Between the first insulating layer 1a and the second insulating layer 1b, the wiring layer 2 and the through conductor 3 are interposed via a bonding member 7 disposed therebetween. Are electrically connected, the bonding member 7 and the wiring layer 2 are bonded, and the insulating layers 1 are bonded to each other via the resin bonding layer 8 disposed therebetween, but the configuration is not limited thereto. .

  For example, as shown in FIG. 3, the wiring board 5B includes a laminated body (referred to as a first block) in which the thin film multilayer portion 4B is composed of first to second insulating layers 1a to 1b, and third to fifth The wiring layer 2 and the through conductor 3 are formed of a laminate (referred to as a second block) composed of the insulating layers 1c to 1e, and between the second insulating layer 1b and the third insulating layer 1c. Are electrically connected through the bonding member 7 disposed therebetween, the bonding member 7 and the wiring layer 2 are bonded, and the insulating layers 1 are bonded to each other through the resin adhesive layer 8 disposed therebetween. It may be.

  In addition, for example, the thin film multilayer portion 4 includes a stacked body (first block) including first to third insulating layers 1a to 1c and a stacked body (first block) including fourth to sixth insulating layers 1d to 1f. 2 block) and a laminate (third block) composed of the seventh to ninth insulating layers 1g to 1i, and between the third insulating layer 1c and the fourth insulating layer 1d. The wiring layer 2 and the through conductor 3 are electrically connected via a bonding member 7 disposed therebetween, the bonding member 7 and the wiring layer 2 are bonded, and the insulating layers 1 are disposed between each other. Further, the wiring layer 2 and the through conductor 3 are bonded to each other with the bonding member 7 disposed between the sixth insulating layer 1f and the seventh insulating layer 1g. Electrically connected to each other, the bonding member 7 and the wiring layer 2 are bonded to each other, and the insulating layers 1 are disposed between the resin adhesive layers. It may be bonded via.

  That is, the number of blocks of the wiring board 5 is set as appropriate so that the thin film multilayer portion 4 has the desired number of layers of the insulating layer 1, and the arrangement of the bonding member 7 and the resin adhesive layer 8 in the thin film multilayer portion 4 is as follows. It is appropriately set according to the number of blocks. In addition, the number of laminated insulating layers 1 in the block is appropriately set in consideration of the productivity of the wiring board 5 and the like.

  In addition, the multilayer wiring board 11A including the wiring board 5A having the thin film multilayer portion 4A can be manufactured as follows, for example. Here, as shown in FIG. 2, the first insulating layer 1a (referred to as a first block) and a laminated body (referred to as a second block) composed of second to fourth insulating layers 1b to 1d. The case of the wiring substrate 5A having the thin film multilayer portion 4A will be described with reference to FIG.

  First, as shown in FIG. 4A, a description will be given of a second block (stacked body made up of second to fourth insulating layers 1b to 1d) of the thin film multilayer portion 4A. The fourth insulating layer 1d, the third insulating layer 1c, and the second insulating layer 1b are stacked in this order.

  An adhesive film and an insulating film to be the fourth insulating layer 1d are laminated on the support, and are bonded using, for example, a press working method. Then, a concave portion corresponding to the pattern of the wiring layer 2 is formed on the insulating film at a position where the wiring layer 2 is formed using an etching method. And the wiring layer 2 is formed in the concave part of the surface of an insulating film, for example using thin film formation methods, such as a vapor deposition method, sputtering method, an ion plate method, and a plating method. If necessary, trimming processing such as masking or etching is performed to form the wiring layer 2 on the surface of the insulating film.

Next, on the insulating film to be the fourth insulating layer 1d, an adhesive film to be the insulating interlayer adhesive layer 4a and an insulating film to be the third insulating layer 1c are laminated, and for example, a press working method is performed. Use to join. Then, a CO ₂ laser is used so that a part of the insulating film to be the third insulating layer 1c penetrates in the thickness direction at a position corresponding to the wiring layer 2 formed in the insulating film (fourth insulating layer 1d). Alternatively, the through hole is formed by using a drilling process such as laser processing with a YAG laser, RIE (reactive ion etching), or etching with a solvent. Then, fill the inside of the through hole with a metal material (copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cobalt, titanium, or tungsten) using a method such as sputtering, vapor deposition, or plating. Therefore, the through conductor 3 is formed. Then, the wiring layer 2 is formed on the surface of the insulating film to be the third insulating layer 1c by using the same method as described above so as to correspond to the through conductor 3.

  Then, on the insulating film to be the third insulating layer 1c, an adhesive film to be the insulating interlayer adhesive layer 4a and an insulating film to be the second insulating layer 1b are laminated and bonded using, for example, a press working method. To do. Using the same method as described above, the through conductor 3 and the wiring layer 2 are formed on the insulating film to be the second insulating layer 1b. The laminated body composed of the second insulating layer 1b to the fourth insulating layer 1d thus formed is peeled off from the support, and the second block (the laminated body composed of the second to fourth insulating layers 1b to 1d) is peeled off. Body). Note that the second block can be the thin-film multilayer portion 4 in FIG. 1 by positioning the second insulating layer 1b of the stacked body on the lower side.

Then, the resin adhesive layer 8 is laminated on the second insulating layer 1b (the side facing the first insulating layer 1a) of the second block, and an opening is formed at a position corresponding to the bonding member 7A of the first block. To do. The opening is formed, for example, using laser processing with a CO ₂ laser or YAG laser, RIE (reactive ion etching), or drilling such as etching with a solvent.

The through conductor 3 provided in the uppermost recess of the thin film multilayer portion 4A peels off the second block (laminated body composed of the second to fourth insulating layers 1b to 1d) from the support, 4 insulating layers 1d. The concave portion is formed in the fourth insulating layer 1d by using, for example, laser processing with a CO ₂ laser or YAG laser, RIE (reactive ion etching), or drilling processing such as solvent etching. To do. And the penetration conductor 3 is filled with metal materials, such as copper, silver, palladium, gold | metal | money, platinum, aluminum, chromium, nickel, cobalt, or titanium, or the alloy material of these metal materials to the middle of a through-hole, for example. Formed by. Further, for example, a nickel plating layer and a gold plating layer are formed on the surface of the through conductor 3.

  Next, as shown in FIG. 4B, the first block (first insulating layer 1a) of the thin film multilayer portion 4A will be described below.

  Similar to the second block, an adhesive film and an insulating film to be the first insulating layer 1a are laminated on the support, and are joined using, for example, a press working method to form the wiring layer 2 and the through conductor 3. Form.

  The wiring layer 2 forms a concave portion corresponding to the pattern of the wiring layer 2 on the insulating film. And the wiring layer 2 is formed in the concave part of the surface of an insulating film, for example using thin film formation methods, such as a vapor deposition method, sputtering method, an ion plate method, and a plating method. If necessary, trimming processing such as masking or etching is performed to form the wiring layer 2 on the surface of the insulating film.

Then, after peeling off the first insulating layer 1a from the support, for example, a novolac resin-based photosensitive resin layer is provided on the insulating film on the side opposite to the side on which the wiring layer 2 is formed. 3
In order to penetrate both the first insulating layer 1a and the photosensitive resin in the thickness direction at the same time, laser processing with CO ₂ laser or YAG laser, RIE (reactive ion etching), or solvent A through hole is formed using a drilling process such as etching. Moreover, a through-hole can also be formed using the same method, using a thermosetting resin material on an insulating film.

  A metal material such as copper, silver, palladium, gold, platinum, aluminum, chromium, nickel, cobalt, or titanium, or an alloy material of these metal materials, which becomes the through conductor 3, or an alloy material of these metal materials is formed in the through hole. 3 is provided halfway through the first insulating layer 1a so that the upper surface of 3 is located inside the first insulating layer 1a.

  Then, on the through conductor 3 provided partway through the through hole, the material of the bonding member 7 is filled into the through hole by giving the material of the bonding member 7 overflowing from the through hole of the photosensitive resin layer to the through hole. In addition, the projecting portion 7b can have an umbrella shape that expands downward. Specifically, a solder material is used as the material of the joining member 7, and the molten solder material is supplied so as to overflow from the through hole of the photosensitive resin layer. Thereafter, the melted solder material is solidified to form an umbrella-like shape that becomes the protruding portion 7b on the surface of the photosensitive resin layer around the through hole by the solder material overflowing from the through hole.

  Then, by peeling off and removing the photosensitive resin layer, the joining member 7A protrudes from the main body portion 7a in the layer direction of the first insulating layer 1a and is separated from the surface of the first insulating layer 1a. Become. And 7 A of joining members are formed so that a part of main-body part 7a may be located in the inside of the 1st insulating layer 1a. Thus, the joining member 7a is provided such that the lower end portion of the main body portion 7a enters the first insulating layer 1a.

  The thin film multilayer portion 4A is aligned by aligning the opening of the resin adhesive layer 8 of the second block and the joining member 7 of the first block, and joining them using, for example, a press working method. A wiring board 5A having The press working method is performed while heating the first block and the second block.

  Thus, the joining member 7A is joined to the wiring layer 2 of the second insulating layer 1b. Then, the wiring layer 2 of the second insulating layer 1b and the through conductor 3 of the first insulating layer 1a are electrically connected via the bonding member 7A, and the first insulating layer 1a and the second insulating layer 1b are connected. Are bonded via a resin adhesive layer 8.

  A bonding layer 10 is laminated on the surface of the first insulating layer 1a of the wiring substrate 5A facing the ceramic substrate 6. The bonding layer 10 is for bonding the wiring substrate 5A onto the ceramic substrate 6. The multilayer wiring board 11A in which the wiring board 5A is bonded to the ceramic substrate 6 via the bonding layer 10 is excellent in productivity or practicality (so-called multi-product compatibility).

  That is, since the multilayer wiring substrate 11A is manufactured by bonding the separately manufactured wiring substrate 5A and the ceramic substrate 6 via the bonding layer 10, the wiring substrate 5A is directly laminated on the upper surface of the ceramic substrate 6. As compared with the above, the multilayer wiring board 11A can be easily manufactured. In addition, since various patterns of wiring boards can be prepared together, it is easy to cope with so-called multiple types of multilayer wiring boards. The bonding layer 10 can be made of a thermosetting resin such as a polyimide resin, a polyquinoline resin, a polyamideimide resin, an epoxy resin, or a fluorine resin. The bonding layer 10 has a thickness of, for example, 15 (μm) to 60 (μm).

Then, a through hole is formed in the bonding layer 10 using a method similar to the method used when forming the through hole in the wiring substrate 5A. And the joined body 10a is formed by providing a conductor in a through-hole from a metal material. The joined body 10a is made of a metal material such as tin, silver, or copper. The joined body 10a can be made of a solder material such as a gold-tin alloy, a tin-silver alloy, or a tin-copper alloy.

  Next, for example, a ceramic substrate 6 having a relatively high rigidity is prepared. This ceramic substrate 6 is for providing the wiring substrate 5 having the thin-film multilayer portion 4 having low rigidity on the upper surface side to form a multilayer wiring substrate 11A having high rigidity. The ceramic substrate 6 is formed by, for example, depositing a crystal component in a ceramic material made of an aluminum oxide sintered body, an aluminum nitride sintered body, a mullite sintered body, a glass ceramic sintered body, or the like, or a glass base material. It is made of a ceramic material made of crystallized glass or the like, or a ceramic material made of a microcrystal sintered body such as mica and aluminum titanate. Such a ceramic material is a ceramic material (so-called machinable ceramics) capable of precise machining that is almost equivalent to a metal material.

  If the ceramic substrate 6 is made of, for example, an aluminum oxide sintered body, it can be manufactured as follows. That is, a ceramic produced by forming a slurry prepared by adding and mixing an appropriate organic binder and organic solvent to raw powders such as aluminum oxide and silicon oxide into a sheet shape using a sheet forming technique such as a doctor blade method or a lip coater method. A green sheet is manufactured, and then the ceramic green sheet is formed into an appropriate shape and size using cutting or punching, and is fired at a temperature of about 1300 (° C.) to 1500 (° C.). Can be produced.

  Further, the wiring board 9 is applied to the ceramic substrate 6 as required using a metal material such as tungsten, molybdenum, manganese, copper, silver, palladium, gold, or platinum, or a metallizing method or a plating method. Leave it attached. If the wiring conductor 9 is made of tungsten, for example, a paste of tungsten is applied or filled on the surface of the ceramic green sheet to be the ceramic substrate 6, the inside of the through-hole formed in advance, etc. Can be deposited by co-firing. A plurality of ceramic green sheets are laminated according to the desired number of laminated ceramic substrates 6.

  And it aligns so that the wiring conductor 9 of the surface (upper surface) of the ceramic substrate 6 and the bonded body 10a of the bonding layer 10 provided on the wiring substrate 5A face each other, and it is heated and cured while being pressurized. Therefore, the wiring board 5A and the ceramic substrate 6 are joined to manufacture the multilayer wiring board 11A.

  The present invention is not particularly limited to Embodiment 1 and Embodiment 2 described above, and various changes and improvements can be made within the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 Insulation layer 2 Wiring layer 3 Through conductor 4 Thin film multilayer part 5, 5A, 5B Wiring board 6 Ceramic substrate 7, 7A Joining member 7a Main part 7b Protrusion part 8 Resin adhesive layer 9 Wiring conductor 10 Joining layer 10a Joining conductor 11, 11A 11B Multilayer wiring board

Claims (3)

A thin film multilayer portion including a plurality of laminated insulating layers, a through conductor provided in the insulating layer, and a wiring layer provided between the plurality of insulating layers and electrically connected to the through conductor A wiring board having
The wiring layer and the through conductor are electrically connected via a bonding member disposed between at least one of the plurality of insulating layers of the thin film multilayer portion, and the insulating layer The two are bonded to each other through a resin adhesive layer disposed therebetween, and the bonding member includes a main body portion and a protruding portion, and the protruding portion is on the bonding portion side with the wiring layer. A wiring board that protrudes from a main body portion in a layer direction of the insulating layer, and wherein the resin adhesive layer is disposed between the protruding portion and the insulating layer.   The wiring board according to claim 1, wherein a part of the main body portion of the joining member is located inside the insulating layer. A ceramic substrate;
A multilayer wiring board comprising: the wiring board according to claim 1 or 2 stacked on an upper surface of the ceramic substrate.

Images