JP2015126190A - Semiconductor light-emitting element, image forming apparatus, image display device, and manufacturing method of semiconductor light-emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To solve the problem in which: in bonding a semiconductor thin film light-emitting element on a metal layer with high heat dissipation by using a direct intermolecular force, there is proposed a structure using an AuGeNi alloy layer as a bonding surface, and when chemically stable Pt is used as a barrier metal to prevent the eutectic crystallization with Ti that is used as an adhesion improvement layer, wet etching is made difficult and it has been difficult to avoid damage during dicing.SOLUTION: A semiconductor light-emitting element includes bonding substrates (102, 103, and 104), a bonding metal 107 formed on a formation substrate 102, and a semiconductor thin film light-emitting element 108 having a plurality of light-emitting parts and bonded on the bonding metal 107, where the bonding metal 107 forms an outermost layer with an AuGeNi layer 106, forms an adhesion improvement layer with the formation substrate 102 with an Ni layer 105, and arranges the light-emitting parts in a one-dimensional or two-dimensional manner.

Description

  The present invention relates to a semiconductor light-emitting element and a method for manufacturing the same, and an image forming apparatus and an image display using the semiconductor light-emitting element. Relates to the device.

  A structure in which an AuGeNi alloy layer is used as a bonding surface when a semiconductor thin film light-emitting element is directly bonded onto a metal layer with high heat dissipation using an intermolecular force has been proposed (for example, see Patent Document 1). It has been experimentally confirmed that the formation of the AuGeNi alloy layer on the outermost surface has the effect of suppressing the generation of hillocks and voids due to recrystallization when a thermal history is applied. Even when all the steps are completed by being maintained, a strong bonding force is maintained.

Japanese Patent Laying-Open No. 2013-74171 (5th page, FIG. 6)

  However, when AuGeNi is used as the bonding metal on the outermost surface, when using chemically stable Pt as the barrier metal in order to prevent eutectic generation when Ti is used as the adhesion improving layer, semiconductor thin film light emission Since it is difficult to wet-etch the bonding metal in accordance with the element, during dicing, the film is peeled off at the interface between the bonding metal and the underlying flattening film, and the semiconductor light-emitting element that is made into a chip by dicing is stabilized. I couldn't make it.

The semiconductor light emitting device according to the present invention is
A bonding substrate; a bonding metal formed on the bonding substrate; and a semiconductor thin-film light emitting element having a plurality of light emitting portions and bonded onto the bonding metal,
The bonding metal is characterized in that an outermost layer is formed of AuGeNi, an adhesion improving layer with the bonding substrate is formed of Ni, and the light emitting portions are arranged one-dimensionally or two-dimensionally.

A method for manufacturing a semiconductor light emitting device according to the present invention includes:
Forming a planarizing film on the bonding substrate; and forming a bonding metal comprising an Ni layer as an adhesion improving layer and an AuGeNi layer as an outermost layer of the bonding surface on the planarizing layer; A step of bonding a semiconductor thin film light emitting element having a plurality of light emitting portions to the bonding surface, a step of patterning by wet etching so as to remove a portion of the bonding metal existing in the dicing region, and dicing in the dicing region And a process.

  According to the present invention, since the bonding metal can be removed from the dicing line by etching before dicing, the semiconductor light emitting element can be prevented from being damaged by dicing.

1 is a cross-sectional structure diagram showing a cross-sectional structure of a semiconductor light emitting element according to a first embodiment of the present invention. (A) is a top view which shows the planar structure of the semiconductor light-emitting device of Embodiment 1, (b) is the elements on larger scale of the dotted-line surrounding part of (a). FIG. 6 is a fabrication process diagram for describing a fabrication process of the semiconductor light emitting element of the first embodiment. FIG. 6 is a fabrication process diagram for describing a fabrication process of the semiconductor light emitting element of the first embodiment. FIG. 6 is a fabrication process diagram for describing a fabrication process of the semiconductor light emitting element of the first embodiment. It is a manufacturing process figure used for description of the manufacturing process of a semiconductor thin film light emitting element, (a) is the external appearance perspective view, (b) is the fragmentary sectional view of the part cut off with the line frame. It is a manufacturing process figure used for description of the manufacturing process of a semiconductor thin film light emitting element, (a) is the external appearance perspective view, (b) is the fragmentary sectional view of the part cut off with the line frame. It is a manufacturing process figure used for description of the manufacturing process of a semiconductor thin film light emitting element, (a) is the external appearance perspective view, (b) is the fragmentary sectional view of the part cut off with the line frame. (A) is a perspective view which shows the form which arranged four sets of semiconductor light emitting elements of the modification of Embodiment 1 on the printed circuit board, (b) is the part which expanded the part enclosed with a dotted line to (a) It is an enlarged plan view. It is sectional drawing which shows the cross-section of the semiconductor light-emitting device which looked at the BB line in FIG.9 (b) from the same arrow direction. (A) shows the measurement results of the surface roughness of the AuGeNi layer immediately after film formation by sputtering, and (b) shows the AuGeNi layer after conducting a holding experiment at 350 ° C. for 1 hour assuming further thermal history. The measurement result of surface roughness is shown. It is sectional drawing which shows the cross-section of the semiconductor light-emitting device of Embodiment 2 by this invention. FIG. 10 is a manufacturing process diagram for describing a manufacturing process of the semiconductor light-emitting element of the second embodiment. FIG. 10 is a manufacturing process diagram for describing a manufacturing process of the semiconductor light-emitting element of the second embodiment. It is a block diagram which shows roughly the principal part structure of the LED printer of Embodiment 3 employ | adopted as the exposure apparatus as an example of use of the semiconductor light-emitting device by this invention. It is an external appearance perspective view of HMD of Embodiment 4 employ | adopted for the HMD image formation unit as an example of use of the semiconductor light-emitting device by this invention. It is a schematic block diagram which shows the principal part structure of HMD. The example of the use of the semiconductor light emitting device according to the present invention shows the portable terminal of the fifth embodiment adopted in a display, wherein (a) is an external perspective view when opened, and (b) is an external view when closed. It is a perspective view. (A) shows the measurement results of the surface roughness of the AuGeNi layer immediately after being deposited by sputtering in the case of the comparative example using Ti as the adhesion improving layer, and (b) further assumes a thermal history. The measurement result of the surface roughness of the AuGeNi layer after conducting a holding experiment at 350 ° C. for 1 hour is shown. (A) shows the measurement results of the surface roughness of the AuGeNi layer immediately after being deposited by sputtering when a barrier metal (Pt) is used between Ti and AuGeNi in the case of the comparative example, and (b) Shows the measurement result of the surface roughness of the AuGeNi layer after conducting a holding experiment at 350 ° C. for 1 hour assuming further thermal history. It is a cross-section figure which shows the cross-section of the one-dimensional LED array element as a comparative example. (A) is a top view which shows the planar structure of the one-dimensional LED array element as a comparative example, (b) is the elements on larger scale of the dotted-line surrounding part of (a). (A) is the external appearance perspective view of the LED print head which comprises the one-dimensional LED array light-emitting device for LED printers using the one-dimensional LED array element as a comparative example, (b) is a dotted line to (a). It is the elements on larger scale which expanded the enclosing part. It is explanatory drawing which shows the dicing process of the one-dimensional LED array element as a comparative example, (a) is an external appearance perspective view of the one-dimensional LED array element before dicing, (b) is a dicing performed normally. (C) shows a state in which dicing is not normally performed and peeling occurs in the bonding metal.

Embodiment 1 FIG.
FIG. 1 is a cross-sectional structure diagram showing a cross-sectional structure of a semiconductor light-emitting element 101 according to the first embodiment of the present invention, and FIG. 2 (a) is a plan view showing a planar structure of the semiconductor light-emitting element 101. b) is a partially enlarged view of a portion surrounded by a dotted line in FIG. The cross-sectional structure of FIG. 1 corresponds to a cross section of the section A-A in FIG. 3 to 5 are manufacturing process diagrams for explaining the manufacturing process of the semiconductor light emitting device 101, and FIGS. 6 to 8 are manufacturing process diagrams for explaining the manufacturing process of the semiconductor thin film light emitting device 108. 6-8, each figure (a) is an external appearance perspective view, and each figure (b) is a fragmentary sectional view of the part cut off by the line frame 500. FIG.

  Hereinafter, a manufacturing process of the semiconductor light emitting device 101 having the configuration shown in FIGS. 1 and 2 will be described with reference to FIGS.

The formation substrate 102 made of a Si substrate and provided with an LED drive circuit can form a Si drive circuit by a known semiconductor process. Then, as shown in FIG. 3A, a passivation film 103 made of, for example, SiN, SiO ₂ or the like is formed on the surface of the formation substrate 102 with a film thickness of, for example, 5000 to 10,000 mm. For convenience, the manufacturing process will be described with one chip cut out. However, in actuality, the manufacturing process described later is performed in a wafer shape in which a plurality of similar semiconductor light emitting elements are arranged in the vertical and horizontal directions. Is to implement.

  As shown in FIG. 3B, the surface of the passivation film 103 formed on the formation substrate 102 has a structure of the formation substrate 102 with respect to a region where the semiconductor thin film light emitting element 108 is bonded in a later step. A planarization film 104 for suppressing the surface roughness and the surface roughness of the passivation film 103 is formed. The planarizing film 104 can be formed from an organic insulating film such as a polyimide resin or a novolac-based resin that can be formed by coating, for example. The planarization film 104 can be formed only in the region. The surface roughness (Rpv) of the planarizing film 104 is desirably 2 nm or less. Here, the formation substrate 102, the passivation film 103, and the planarization film 104 correspond to a bonding substrate.

  As shown in FIG. 3C, an Ni layer 105 as an adhesion improving layer is formed on the planarizing film 104, and an AuGeNi layer 106 is further formed as an outermost layer on the bonding surface (see FIG. 1). The bonding metal 107 is formed by combining the Ni layer 105 and the AuGeNi layer 106.

  The bonding metal 107 can make an electrical contact (ohmic contact) with the lower contact layer 109 (see FIG. 1) of the semiconductor thin film light emitting element 108 directly bonded thereon in a later process. Therefore, a part of the bonding metal 107 is stretched and connected to the lower electrode connection pad 120 provided on the formation substrate 102, thereby electrically connecting the lower contact layer 109 and the formation substrate 102 in the semiconductor thin film light emitting element 108. Connect to.

  The composition ratio of each element of the AuGeNi layer 106 (see FIG. 1), Au: Ge: Ni, is preferably 86 to 94 wt%: 3 to 7 wt%: 3 to 7 wt%, and here, for example, 90 wt%: 5 wt% : A composition ratio of 5 wt% is assumed. The Ni layer 105 and the AuGeNi layer 106 can be formed by a known vapor deposition method or sputtering method. The Ni layer 105 has a film thickness of, for example, 100 mm to 1000 mm, and the AuGeNi layer has a film thickness of, for example, 500 mm to 5000 mm. Can be membrane.

  Here, the structure and production process of the semiconductor thin film light emitting element 108 (see FIG. 4) separately manufactured and bonded onto the bonding metal 107 will be described with reference to the production process diagrams of FIGS.

  First, as shown in FIG. 6, an epitaxial wafer 117 on which the layer structure of the semiconductor thin film light emitting element 108 is formed is prepared. On this epitaxial wafer 117, a layer to be a semiconductor thin film light emitting element 108 to be bonded onto the formation substrate 102 in a later process is epitaxially grown on the growth substrate 118.

  6B, at least the lower contact layer 109, the lower clad layer 110, the light emitting layer 111, the upper clad layer 112, and the upper contact are formed from the lower side. The sacrificial layer 119 that can be formed from the layer 113 and enables the lower contact layer 109 to the upper contact layer ll3 to be peeled from the growth substrate 118 in a later step is formed on the growth substrate ll8 and the lower side. It grows between the contact layers 109.

As the growth substrate 118, for example, a GaAs substrate can be used. As an example of each layer, the lower contact layer 109 is n-GaAs, and the lower clad layer 110 is n-Al _a Ga _1-a As ( 0 <a <1), the light emitting layer 111 has a well layer of (Al _b1 Ga _1-b1 ) _b2 In _1-b2 P (0 ≦ b1, b2 ≦ 1, b1 + b2 = 1) and a barrier layer of (Al _c1 , Ga ₁ -c ₁ ) _{c 2} In _{1 -c 2} P (0 ≦ c 1, c 2 ≦ 1, c 1 + c 2 = 1) MQW structure formed by stacking a plurality of quantum wells, or p-Al _d Ga _l-d As or Double heterostructure made of n-Al _d Ga _1-d As (0 <d <1), p-Al _e Ga _1-e As (0 <e <1) in the upper cladding layer 112, and finally the upper contact layer 113 has p-GaAs or It can be used p-GaP semiconductor material. The sacrificial layer 119 can be made of an AlAs semiconductor material.

  Each of the semiconductor layers described above can be grown on the growth substrate 118 by a known metal organic chemical vapor deposition (MOCVD) method or molecular beam epitaxy (MBE).

  Next, using the above-described epitaxial wafer 117, the semiconductor thin film light emitting element 108 is manufactured as follows.

  First, a photoresist is formed in a region to be left as the light emitting mesa 114 (FIG. 7B), and in that state, the region from the upper contact layer 113 to the lower contact layer 109 is made of phosphoric acid, hydrogen peroxide solution, and water. Etch with etchant. Then, after the light emitting mesa 114 is formed, the photoresist is removed, and the photoresist is formed into a strip shape having a size to be handled as the semiconductor thin film light emitting element 108 as shown in FIG. By removing up to the sacrificial layer 119, the epitaxial wafer 117 is etched to a depth at which the end face of the sacrificial layer 119 is exposed as an etching end face.

  Then, after removing the photoresist, in order to protect the light emitting mesa 114, it is separately protected with a resist, and in this state, the sacrificial layer 119 is etched with, for example, hydrofluoric acid or hydrochloric acid, as shown in FIG. Next, the semiconductor thin film light emitting device 108 is peeled off from the growth substrate 118 to form a thin film. Accordingly, the lower contact layer 109 functions as a lower common electrode common to the light emitting mesas 114.

  The semiconductor thin film light emitting device 108 formed as described above is moved onto the bonding metal 107 as shown in FIG. 4A, and the back surface (lower surface) of the lower contact layer 109 is the surface (upper surface) of the bonding metal 107. (See FIG. 4 (b)). This bonding can be performed using intermolecular force, and by applying a thermal history, a good ohmic contact can be obtained between the lower contact layer 109 and AuGeNi 106 (see FIG. 1) which is the surface layer of the bonding metal 107. Can do.

  In this joining process, there is a case where a mounting deviation of about plus or minus 3 μm may occur even if the joining is performed with high precision due to the joining precision caused by the joining precision of the joining apparatus and the linear expansion coefficient of the workpiece.

  Here, as shown in FIG. 4C, the bonding metal 107 is wet-etched to the vicinity of the bonding position of the bonded semiconductor thin-film light-emitting element 108, and the mounting displacement as described above occurs, so that the dicing line is formed. Even when the position is close to the bonded semiconductor thin film light emitting element 108, dicing is possible without the dicing blade 122 and the bonding metal 107 contacting each other. Here, the wet etching of the bonding metal 107 can be performed so that the pattern of the bonding metal 107 is formed only inside the element.

  In this wet etching, the region of the bonding metal 107 to be left as a pattern is protected with a photoresist, and the outermost AuGeNi layer 106 (FIG. 1) is etched with an etchant composed of potassium iodide, iodine, and water. The Ni layer 105 (FIG. 1) is etched using hydrochloric acid. When the Ni layer 105 is a thin film having a thickness of, for example, 200 mm or less, the Ni layer 105 can be simultaneously etched by etching the AuGeNi layer 106 with an etchant made of potassium iodide, iodine, and water.

Next, as shown in FIGS. 1, 2, and 5 (a), an interlayer insulating film 116 made of, for example, SiN or SiO _{2 is} formed by using known plasma CVD except for a predetermined region such as a connection terminal portion. Form a film. Then, the upper electrode connection pad 121 provided on the formation substrate 102 and the uppermost upper contact layer 113 in the light emitting mesa 114 of the semiconductor thin film light emitting element 108 are connected using the upper connection wiring 115. The upper connection wiring 115 can be formed by a known vapor deposition method or sputtering method.

  Finally, as shown in FIGS. 5B and 5C, the long side is diced roughly to some extent by a dicing blade 122, and then the short side is diced with high accuracy, thereby obtaining a one-dimensional (linear shape). The individual semiconductor light emitting elements 101 which are the LED array elements of FIG.

  Here, the bonding metal 107 having a configuration in which the Ni layer 105 is used as the adhesion improving layer and the AuGeNi layer 106 is formed as the bonding surface layer will be further described.

  Since the wet etching can be performed by using the bonding metal 107 in the above combination, patterning can be performed in accordance with the semiconductor thin film light emitting element 108 to be mounted by wet etching before dicing. For this reason, even when the semiconductor thin film light emitting device 108 is mounted on the bonding metal 107 and mounting diversion occurs and the dicing line is in the vicinity of the semiconductor thin film light emitting device 108, the dicing blade 122 does not contact the bonding metal 107. Further, peeling at the interface between the planarizing film 104 and the bonding metal 107 generated during dicing can be prevented.

  Therefore, the blade dicing process can be stably performed also in the semiconductor light emitting element (one-dimensional LED array element) 101 in which the light emitting mesa 114 (see FIG. 5) is formed in the vicinity of the dicing line. As a result, for example, even when a plurality of semiconductor light emitting elements 101 (corresponding to 501) are one-dimensionally mounted on a printed wiring board 517 shown in FIG. The clearance can be reduced and can be mounted with high accuracy.

  Further, by using the bonding metal 107 in the above combination, a 1-hour holding experiment at 350 ° C. assuming a heat history applied until the element formation is completed after the semiconductor thin film light emitting element 108 is bonded onto the bonding metal 107. However, as shown in the experimental results of FIG. 11, it has been experimentally confirmed that hillocks and voids are not generated. Therefore, by using the bonding metal 107 in the above combination, a semiconductor light emitting element capable of wet etching and maintaining a good bonding state can be manufactured.

  11A shows the measurement result of the surface roughness of the AuGeNi layer 106 immediately after being formed by sputtering, and FIG. 11B shows the heat applied until the element formation is completed. The measurement result of the surface roughness of the AuGeNi layer 106 after conducting a 1 hour holding experiment at 350 ° C. assuming a history is shown. The surface roughness (Rpv) here means a typical height difference between a peak (peak) and a valley (valley) in a minute region (for example, a 5 μm square region) on the bonding metal surface. . Further, the surface roughness is specifically measured using an atomic force microscope (AFM: Atomic Force Microscope).

  Here, as a comparative example, a case where Ti is used as the adhesion improving layer will be described.

  When an Au-based metal material is formed on the substrate by vapor deposition or sputtering, Ti can be used as the adhesion improving layer. However, when Ti is provided as an adhesion improving layer and AuGeNi which is the outermost surface of the bonding metal is formed thereon, for example, a thermal history of 350 ° C. or more is applied, so that Ti and AuGeNi are eutectic and hillock and It has been confirmed from the experimental data shown in FIG. 19 that voids are generated and the typical surface roughness (Rpv) increases to about 15 nm.

  FIG. 4A shows the measurement result of the surface roughness of the AuGeNi layer immediately after film formation by the sputtering method, and FIG. 4B further shows the thermal history applied until the element formation is completed. The measurement result of the surface roughness of the AuGeNi layer after conducting a holding experiment at 1 ° C. for 1 hour is shown.

  Further, as the bonding metal configuration in the experimental data shown here, the film thicknesses of Ti and AuGeNi are 200 mm and 1000 mm, respectively. Furthermore, the surface roughness (Rpv) here means a typical height difference between a peak (peak) and a valley (valley) in a minute region (for example, a 5 μm square region) on the surface of the bonding metal. . Further, the surface roughness is specifically measured using an atomic force microscope (AFM: Atomic Force Microscope).

  On the other hand, there is a method of using Pt as a barrier metal between Ti and AuGeNi as a method for preventing the occurrence of unevenness due to eutectic formation. Thus, it has been confirmed from the experimental data shown in FIG. 20 that eutecticization when a thermal history is applied can be largely prevented. The result of FIG. 20 shows that generation of hillocks and voids can be prevented even in the same figure (b) showing the state after the thermal history, and the typical surface roughness (Rpv) can be suppressed to about 1 nm or less. ing. Note that the experimental data in FIG. 20 is based on experiments conducted with Ti, Pt, and AuGeNi layer thicknesses of 200 mm, 500 mm, and 1000 mm.

  As described above, by using three layers of Ti / Pt / AuGeNi as a bonding metal structure, a good flat surface can be maintained even when a thermal history is applied, and therefore stable using intermolecular force. It can be assumed that the semiconductor thin film light emitting element can be bonded to the substrate.

  Here, a one-dimensional LED array element 501 (semiconductor light emitting element) for an LED print head using the bonding metal 505 having the above structure (Ti / Pt / AuGeNi) is shown as another comparative example in FIGS. FIG. 21 is a cross-sectional structure diagram showing a cross-sectional structure of a one-dimensional LED array element 501 as a comparative example. FIG. 22A is a plan view showing a planar structure of the one-dimensional LED array element 501. b) is a partially enlarged view of a portion surrounded by a dotted line in FIG. Note that the cross-sectional structure of FIG. 21 corresponds to a cross section of the section between lines FF in FIG.

The surface roughness of the formation substrate 502 and the surface of the passivation film 503 are formed on the passivation film 503 made of, for example, SiN or SiO _2. A planarization film 504 for relaxing the roughness is formed. Note that the planarizing film 504 can be formed of an organic insulating film such as a polyimide resin or a novolac resin that can be formed by coating, for example. Further, by making these materials photosensitive, patterning can be performed in an arbitrary region.

  Next, a bonding metal 505 made of Ti / Pt / AuGeNi is formed on the planarizing film 504 by sputtering or vapor deposition. Then, a semiconductor thin film light emitting element 506 made of a single crystal semiconductor and having a film thickness of, for example, 5 μm or less is bonded onto the bonding metal 505 using, for example, intermolecular force. In the semiconductor thin film light emitting element 506, light emitting mesas 512 are formed in a one-dimensional array, and can be formed so as to be connected by the lower contact layer 507. The light emitting mesa 512 can be configured by at least the lower cladding layer 508, the light emitting layer 509, the upper cladding layer 510, and the upper contact layer 511.

  The upper contact layer 511 and the upper electrode connection pad 516 provided on the formation substrate 502 are connected by an upper electrode connection wiring 513 that can be formed by a known vapor deposition method or sputtering method. The lower contact layer 507 can be bonded to the bonding metal 505 by an intermolecular force, and a good ohmic surface can be formed by applying a thermal history after bonding. The bonding metal 505 and the lower electrode connection pad 515 provided on the formation substrate 502 can be connected by extending a part of the bonding metal 505.

  In the above process, when the semiconductor thin film light emitting element 506 is bonded to the formation substrate 502, a bonding deviation of at least about plus or minus 3 μm occurs in consideration of the bonding tolerance of the bonding apparatus or the bonding tolerance generated by the work structure.

  On the other hand, FIG. 23A is an external perspective view of an LED print head that constitutes a one-dimensional LED array light-emitting device for an LED printer using the above-described one-dimensional LED array element 501, and FIG. FIG. 4A is a partially enlarged plan view in which a portion surrounded by a dotted line in FIG.

  As an LED print head for an LED printer, it is necessary to mount a one-dimensional LED array element 501 on a printed wiring board 517 with high accuracy, as shown in FIG. In general, the LED print head is manufactured with a light-emitting portion pitch of 600 dpi (corresponding to 42.3 μm pitch) or 1200 dpi (corresponding to 21.165 μm pitch), and between the one-dimensional LED array elements 501 to be mounted one-dimensionally. The mounting clearance is very narrow. For example, if it is 600 dpi, it needs to be about 20 μm or less, and if it is 1200 dpi, it needs to be about 10 μm or less. Under these restrictions, the formation substrate 502 and the semiconductor thin film light emitting element 506 are further described as described above. It is necessary to take into account the bonding tolerance of plus or minus 3 μm.

  In order to stabilize the clearance between chips, it is necessary to form the one-dimensional LED array element 501 in accordance with the light emitting mesa 512 in dicing for forming the outer shape of the one-dimensional LED array element 501. However, in this dicing, the bonding metal 505 made of Ti / Pt / AuGeNi formed on the flattening film 504 is generally the flattening film 504 that is an organic insulating film made of polyimide resin or novolac resin. Adhesion is weak.

  FIG. 24 is an explanatory diagram showing a dicing process of the one-dimensional LED array element 501. FIG. 24A is an external perspective view of the one-dimensional LED array element 501 before dicing, and FIG. Shows a state in which dicing is normally performed, and FIG. 5C shows a state in which the dicing is not performed normally and peeling occurs in the bonding metal 505.

  In the blade dicing shown in FIG. 24, due to physical damage from the dicing blade 518 or damage by washing with jet water used to cool the dicing blade 518, for example, as shown in FIG. As a result, there is a high possibility that the light emitting mesa 512 is damaged.

  As a method for preventing the film peeling, as described in the first embodiment, the semiconductor thin film light emitting element 506 is bonded to the formation substrate 502 (FIG. 21) before dicing before dicing. In order to remove the bonding metal 505 from the dicing region in accordance with the bonding position, an inward patterning method is effective.

  Here, an example of a technique for wet etching the bonding metal 505 made of Ti / Pt / AuGeNi will be described. First, AuGeNi used as the outermost layer can be easily etched using an etchant made of potassium iodide, iodine, and water, and Ti used as an adhesion improving layer can be easily etched with hydrochloric acid or the like. However, Pt used as a barrier metal is very chemically stable and difficult to etch by wet etching.

  Accordingly, in the one-dimensional LED array element 501 according to the comparative example given here, the dicing blade 518 and the bonding metal 505 come into contact with each other during the blade dicing, and the interface between the planarizing film 504 and the bonding metal 505 is caused by the vibration. As a result, there was a high possibility that the light emitting mesa 512 was damaged.

  Next, a modification of the first embodiment will be described.

  FIG. 9A is a perspective view showing a form in which four sets of semiconductor light emitting devices 123, which are two-dimensional (planar) LED array light emitting devices, are arranged on a printed circuit board 124. FIG. FIG. 10A is a partially enlarged plan view enlarging a portion surrounded by a dotted line in FIG. 10A, and FIG. 10 shows a cross-sectional structure of the semiconductor light emitting device 123 as seen from the direction of the arrow between the BB lines in FIG. It is sectional drawing shown. Therefore, the printed circuit board 124 is not included in FIG.

  10 shows a form after blade dicing, which will be described later, in the following description of the process of forming the semiconductor light emitting element 123, the state before dicing is shown for convenience. There are cases where it is assumed.

  As shown in FIG. 9, the two-dimensional semiconductor light emitting device 123 mounted on the printed wiring board 124 is formed on a formation substrate 125 as shown in FIG. A metal substrate in consideration of the property or a glass substrate that can easily form the outermost surface so as to make the surface roughness very small can be used, but here, it is described assuming a Si substrate.

On the outermost surface of the formation substrate 125 made of an Si substrate, an insulating film 126 is formed because it is necessary to electrically isolate a plurality of bonding metals 129 that also serve as cathode common wiring, which will be formed in a later process. Keep it. The insulating film 126 can be made of, for example, SiN or SiO ₂ that can be formed by known plasma CVD. Furthermore, when the formation substrate 125 is a Si substrate, the insulating film 126 can be formed on the outermost surface of the Si substrate by forming a thermal oxide film. Note that here, the formation substrate 125 and the insulating film 126 correspond to a bonding substrate.

  On this insulating film 126, an Ni layer 127 as an adhesion improving layer is used, and an AuGeNi layer 128 is further formed as the outermost layer of the bonding surface. The bonding metal 129 is configured by combining the Ni layer 127 and the AuGeNi layer 128. Then, on the bonding metal 129, for example, a semiconductor thin film light emitting element l35 comprising at least the lower contact layer 130, the lower clad layer 131, the light emitting layer 132, the upper clad layer 133, and the upper contact layer 134 from below is disposed below the bonding metal 129. Bonding is performed using intermolecular force so that the lower surface of the side contact layer 130 is in contact with the bonding metal 129.

  Here, the semiconductor thin film light emitting element 135 has a shape divided for each light emitting pixel 138, but the semiconductor thin film light emission of the semiconductor light emitting element 101 which is the one-dimensional LED array light emitting element of the present embodiment described above. As in the element 108 (see FIG. 1), the lower contact layer 130 (109 in FIG. 1) can also be connected. Further, the light emitting pixel 138 formed of the semiconductor thin film light emitting element 135 here can be manufactured with high definition, for example, 20 μm, 40 μm, and the like.

Next, as shown in FIG. 9B and FIG. 10, an interlayer insulating film 137 made of, for example, SiN or SiO _{2 is} formed by using known plasma CVD except for a predetermined region such as a connection terminal portion. Then, the upper common connection wiring 136 for connecting the upper contact layers 134 of the adjacent light emitting pixels 138 of the semiconductor thin film light emitting elements 108 arranged in a plurality is formed by, for example, a known vapor deposition method or a sputtering method.

  Before the two-dimensional semiconductor light-emitting element 123 is diced by blade dicing, the bonding metal 129 is moved to the vicinity of the bonding position of the bonded semiconductor thin-film light-emitting element 135 so that the bonding metal 129 does not reach the dicing line. Wet etching is performed. The bonding metal 129 is wet etched, and then dicing is performed to make the semiconductor light emitting element (two-dimensional LED array light emitting element) 123 into small pieces. Here, the wet etching of the bonding metal 129 can be performed so that the pattern of the bonding metal 129 is formed only inside the element.

  Then, as shown in FIG. 9, the cut-out semiconductor light emitting device (two-dimensional LED light emitting device) 123 is mounted on the printed circuit board 124 with high contact with its dicing end face, thereby making the joints inconspicuous and high definition. A large-area display device can be manufactured.

  As described above, after the semiconductor light emitting device 123 is mounted on the printed circuit board 124, the semiconductor light emitting device (two-dimensional LED array light emitting device) 123 mounted on the printed circuit board 124 is caused to emit light by, for example, matrix driving or the like. However, a detailed description of these driving methods is omitted.

  Here, the bonding metal 107 having a configuration in which the Ni layer 127 is used as the adhesion improving layer and the AuGeNi layer 1128 is formed as the bonding surface layer will be further described.

  By using the bonding metal 129 in the above combination, wet etching can be performed. Therefore, patterning can be performed according to the semiconductor thin film light emitting element 135 to be mounted by wet etching before dicing. For this reason, even when the semiconductor thin film light emitting element 135 is mounted on the bonding metal 129, even if the mounting deviation occurs and the dicing line is in the vicinity of the semiconductor thin film light emitting element 135, the dicing blade does not contact the bonding metal 129. It is possible to prevent peeling at the interface between the insulating film 126 and the bonding metal 129 generated during dicing.

  Therefore, the blade dicing process can be performed stably also in the semiconductor light emitting device (two-dimensional LED array light emitting device) 123 in which the light emitting pixel 138 is formed in the vicinity of the dicing line. As a result, the semiconductor light-emitting element (two-dimensional LED array light-emitting element) 123 can be mounted on the display device printed wiring board 124 with a small clearance from an adjacent element with high accuracy.

  Further, by using the bonding metal 129 of the above combination, in a 1 hour holding experiment at 350 ° C. assuming a heat history applied until the element formation is completed after the semiconductor thin film light emitting element 108 is bonded onto the bonding metal 129. In addition, as in the case of the bonding metal 107 (see FIG. 1), it has been experimentally confirmed that hillocks and voids do not occur. Therefore, by using the bonding metal 129 in the above combination, a light-emitting element that can be wet-etched and can maintain a good bonding state can be manufactured.

  As described above, according to the semiconductor light emitting device of the present embodiment, the bonding metal can be patterned by wet etching before dicing according to the bonding position of the semiconductor thin film light emitting device. Therefore, even when the semiconductor thin film light emitting element is displaced, it is possible to prevent the bonding metal 129 from being applied to the dicing line, and it is stable even if a light emitting mesa or light emitting pixel exists in the vicinity of the dicing line. Dicing becomes possible.

  In addition, in the bonding metal according to the present embodiment, generation of hillocks and voids can be prevented even when a thermal history is applied, so that the surface roughness of a good bonding surface can be maintained even after the completion of all processes, and stable. A one-dimensional or two-dimensional semiconductor light emitting element (LED array light emitting element) can be manufactured.

Embodiment 2. FIG.
FIG. 12 is a cross-sectional structure diagram showing a cross-sectional structure of the semiconductor light emitting device 201 according to the second embodiment of the present invention, and FIGS. 13 to 14 are manufacturing process diagrams for explaining the manufacturing process of the semiconductor light emitting device 201. .

  The semiconductor light emitting device 201 is mainly different from the semiconductor light emitting device 101 of the first embodiment shown in FIG. 1 in the shape of the end portion where dicing is performed and the dicing method. Therefore, in this semiconductor light emitting device 201, the same reference numerals are given to the parts common to the semiconductor light emitting device 101 of the first embodiment described above, or the description is omitted by omitting the drawings, and the different points are mainly described. To do.

  As shown in FIG. 12, the semiconductor light emitting device 201 is formed of a passivation layer 203 on a formation substrate 202 made of a Si substrate and provided with an LED drive circuit, and on the surface thereof, the region where the semiconductor thin film light emitting device 108 is bonded. Thus, the planarization film 204 for suppressing the surface roughness due to the structure of the formation substrate 202 and the surface roughness of the passivation film 203 is formed. On the planarizing film 204, the Ni layer 105 is used as an adhesion improving layer, and the AuGeNi layer 106 is further formed as the outermost layer on the bonding surface. The bonding metal 107 is formed by combining the Ni layer 105 and the AuGeNi layer 106.

  Here, the main structures and materials of these layers are the same as those of the semiconductor light emitting element 101 of the first embodiment described above, but the dicing method of the formation substrate 202, the passivation layer 203, and the planarization film 204 is different. Accordingly, the shape of these end portions is different from that of the semiconductor light emitting element 101 described above.

  In the semiconductor light emitting device 201 here, the production process up to dicing is the same as that of the semiconductor light emitting device 101 of the first embodiment described above. Accordingly, the manufacturing stage shown in FIG. 13A corresponds to the manufacturing stage shown in FIG. 5A described in the first embodiment, and the bonding metal 107 is wet-etched by this stage and will be described later. As described above, the bonding metal is removed from the deep etching region by dry etching, the interlayer insulating film 116 is formed, and the upper connection wiring 115 is further formed.

  Hereinafter, the deep etching process by dry etching will be described.

As shown in FIG. 13B, regions such as the light emitting portion other than the region to be deep etched are protected in advance by the photoresist 211, and the interlayer insulating film 116 is flattened by dry etching with CF ₄ and O ₂ ashing. By performing dry etching on the edge of the semiconductor light emitting device 201 by combining various dry etching such as dry etching of the film 204 and further dry etching of the formation substrate 202 made of Si substrate by SF ₆ , FIG. As shown in c), the dicing line portion is deep etched. Then, after the deep etching, the photoresist 211 is removed as shown in FIG. Although not shown in the figure, at this stage, a plurality of semiconductor light emitting elements 201 are continuous through the connecting portion 205 remaining by deep etching.

  Thereafter, as shown in FIG. 14A, after bonding the surface protective tape 213, the connecting portion 205 left by the deep etching is removed by back grinding by the back grinder 212 from the back surface direction of the formation substrate 202, As shown in FIG. 14B, the individual semiconductor light emitting elements 201 are separated into smaller pieces.

  Note that the end surface in the short direction of the deep etching can be deep etched using the bonding metal 207 as a mask.

  Here, dicing will be further described by a combination of deep etching and back grinding.

  In the dry dicing process in which dicing is performed by a combination of deep etching and back grinding described in this embodiment, the bonding metal 107 is wet etched in advance and removed from the dicing line, so that all layers are etched by deep etching. Will be able to. That is, since the dicing process is not a physical dicing process using a dicing blade but a dry dicing process using chemical etching, the short end face of the semiconductor light emitting element (one-dimensional LED array light emitting element) 201 is the same as that of the first embodiment. The light emitting mesa 114 can be made closer to the semiconductor light emitting element 101 or more.

  As described above, according to the semiconductor light emitting device of the present embodiment, the bonding metal can be patterned by wet etching before dry dicing according to the bonding position of the semiconductor thin film light emitting device. That is, it is possible to remove the bonding metal from the deep etching line by performing a wet etching process in advance even for deep etching that would be difficult if there is a bonding metal or the like.

  For this reason, even when a semiconductor thin film light emitting element is misaligned, it is possible to prevent bonding metal from being applied to the deep etching line, and even if a light emitting mesa or light emitting pixel is present in the vicinity of the deep etching line All layers can be etched by etching, and dry dicing can be applied.

  In addition, in the bonding metal according to the present embodiment, generation of hillocks and voids can be prevented even when a thermal history is applied, so that the surface roughness of a good bonding surface can be maintained even after the completion of all processes, and stable. A one-dimensional or two-dimensional LED array light-emitting element can be manufactured.

Embodiment 3 FIG.
FIG. 15 shows an exposure apparatus as an example of use of the semiconductor light-emitting element (one-dimensional LED array light-emitting element) 101 described in the first embodiment or the semiconductor light-emitting element (one-dimensional LED array light-emitting element) 201 described in the second embodiment. 3 is a configuration diagram schematically showing a main configuration of the LED printer 301 of the present embodiment adopted in 310. FIG.

  An LED printer 301 as an image forming apparatus has a configuration as a color electrophotographic printer capable of printing four colors of yellow (Y), magenta (M), cyan (C), and black (K). As shown in the figure, there are four process units 302 to 305 for forming an image of each color using an electrophotographic method. The process units 302 to 305 are arranged in tandem along a conveyance path (indicated by a one-dot chain line in FIG. 15) 307 of the recording paper 306.

Since the internal configurations of these process units 302 to 305 are common, the internal configuration will be described by taking, for example, a cyan process unit 304 as an example.

  In the process unit 304, a photosensitive drum 308 is rotatably arranged in the direction of the arrow. Electric charges are supplied to the surface of the photosensitive drum 308 around the photosensitive drum 308 sequentially from the upstream side in the rotation direction. A charging device 309 for charging and an exposure device 310 for forming an electrostatic latent image by selectively irradiating light onto the surface of the charged photosensitive drum 308 are provided. The exposure apparatus 310 uses the semiconductor light emitting element 101 described in the first embodiment or the semiconductor light emitting element 201 described in the second embodiment as a one-dimensional LED array light source of the LED printer 301.

  Further, a developing device 311 for generating development by attaching cyan toner to the surface of the photosensitive drum 308 on which the electrostatic latent image is formed, and when developing the toner on the photosensitive drum 308 is transferred to the recording paper 306 A cleaning device 312 for removing residual toner remaining on the toner is disposed. Note that the drums or rollers used in these devices rotate as a result of power being transmitted from a drive source (not shown) via gears, as will be described later.

  The LED printer 301 is equipped with a paper cassette 313 for storing recording paper 306 in a stacked state at a lower portion thereof, and a hopping roller 314 for separating and transporting the recording paper 306 one by one above. Yes. Further, in the conveyance direction of the recording paper 306, the recording paper 306 is sandwiched together with the pinch rollers 315 and 316 on the downstream side of the hopping roller 314, and the recording roller 306 is inclined. A registration roller 317 for correcting the line and conveying it to the process unit 302 is provided. The hopping roller 314, the conveyance roller 318, and the registration roller 317 are rotated by power transmitted from a driving source (not shown) via a gear or the like.

  A transfer roller 319 formed of conductive rubber or the like is disposed at a position facing each photoconductor drum 308 of the process units 302 to 305. These transfer rollers 319 have a potential difference between the surface potential of each photoconductive drum 308 and the surface potential of each transfer roller 319 at the time of transfer in which the toner image formed by the toner attached on the photoconductive drum 308 is transferred to the recording paper 306. A voltage for applying the voltage is applied.

  The fixing device 324 fixes the toner transferred onto the recording paper 306 by applying pressure and heating. The discharge roller 320 and the pinch roller 321 downstream of this, and the discharge roller 322 and the pinch roller 323 convey the recording paper 306 discharged from the fixing device 324 to the stacker unit 325. The fixing device 324, the discharge roller 320, and the like are rotated by transmission of power from a drive source (not shown) via gears.

  In the above configuration, the LED printer 301 separates the recording sheets 306 stacked on the sheet cassette 313 one by one by the hopping roller 314, and skews the recording sheets 306 by the conveyance roller 318, the registration roller 316, and the pinch rollers 315 and 316. It is conveyed to the process units 302 to 305 while correcting the above.

  As the conveyed recording paper 306 passes between the transfer rollers 319 facing the photosensitive drum 308 of each of the process units 302 to 305, the toner images of the respective colors are sequentially transferred and transferred by the fixing device 324. The toner image thus formed is fixed on the recording paper 306. Thereafter, the fixed recording sheet 306 is discharged to the stacker unit 325 by discharge rollers 320 and 322 and the like.

  Here, since the semiconductor light emitting device 101 described in the first embodiment or the semiconductor light emitting device 201 described in the second embodiment is employed in the exposure apparatus 310 as a one-dimensional LED array light source of the LED printer 301, for example, When mounting a plurality of semiconductor light emitting elements (one-dimensional LED array light emitting elements) 101 and 201 on a printed wiring board 517 as shown in FIG. 23, a clearance with an adjacent chip can be stably secured.

  As described above, according to the LED printer 301 of the present embodiment in which the semiconductor light emitting device 101 described in the first embodiment or the semiconductor light emitting device 201 described in the second embodiment is employed as a one-dimensional LED array light source, Each semiconductor light-emitting element can achieve the effects described in the respective embodiments, so that when one-dimensional mounting of a plurality of one-dimensional LED array light-emitting elements is possible, stable one-dimensional mounting is possible. The distance between the element end dot in the original LED array light emitting element and the end face in the short direction can be reduced. Therefore, it becomes possible to create a higher-definition one-dimensional LED array light-emitting device (LED print head).

Embodiment 4 FIG.
FIG. 16 shows a head mount as an example of use of the semiconductor light-emitting element (one-dimensional LED array light-emitting element) 101 described in the first embodiment or the semiconductor light-emitting element (one-dimensional LED array light-emitting element) 201 described in the second embodiment. FIG. 17 is an external perspective view of the HMD 401 of the present embodiment employed in a display (Head Mount Display: hereinafter referred to as HMD) image forming unit 402, and FIG. 17 is a schematic configuration diagram showing the main configuration of the HMD 401.

  As shown in FIG. 16, an HMD 401 as an image display device has an HMD image forming unit 402 installed therein, and a scanning image emitted from the HMD image forming unit 402 is installed in front of the HMD image forming unit 402. A display image 404 that is an upright and enlarged virtual image is formed in front of the reflective surface 403. Note that a non-transmissive HMD can be obtained by making the reflective surface 403 non-transmissive, and an optical transmissive HMD can be obtained by making the reflective surface 403 a half mirror.

  With reference to FIG. 17, the HMD 401 will be further described including the configuration of the HMD image forming unit 402.

  As shown in the figure, the HMD image forming unit 402 uses a one-dimensional LED array element 405 as an image forming light source, and creates a two-dimensional image by scanning the one-dimensional image with a scanning mirror 406 arranged above the element. A convex lens 407 is disposed at the tip of the light beam reflected by the scanning mirror 406. The positional relationship between the scanning mirror 406 and the convex lens 407 is such that the scanning mirror 406 is disposed within the front focal length of the convex lens 407, and a desired magnification is created by adjusting the distance.

  Here, the one-dimensional LED array element 405 may be the semiconductor light emitting element 101 described in the first embodiment or the semiconductor light emitting element 201 described in the second embodiment, or a plurality of these semiconductor light emitting elements. For example, as shown in FIG. 23, it may be mounted on a printed wiring board 517 so as to be linearly adjacent.

  As described above, by installing the scanning mirror 406 and the convex lens 407 in the HMD image forming unit 402 in the positional relationship described above, the light emitted from the convex lens 407 to the rear of the lens is an upright virtual image enlarged as viewed from the rear of the lens. It becomes a light beam forming. The light ray is further reflected toward the viewpoint 409 via the reflection surface 403, thereby forming a display image 404 of a virtual image enlarged in front of the reflection surface 403. Although the convex lens 407 is used here to form an enlarged erecting virtual image, a concave mirror intended to function as a turning mirror can also be used.

  Here, since the semiconductor light emitting device 101 described in the first embodiment or the semiconductor light emitting device 201 described in the second embodiment is employed as the one-dimensional LED array device 405, for example, as shown in FIG. When a plurality of semiconductor light emitting elements (one-dimensional LED array light emitting elements) 101 and 201 are integrally mounted on the substrate 517 so as to cope with a large screen, a gap generated between adjacent chips can be minimized. it can.

  As described above, according to the HMD 401 of the present embodiment in which the semiconductor light-emitting element 101 described in the first embodiment or the semiconductor light-emitting element 201 described in the second embodiment is employed as the one-dimensional LED array element 405, Since the effects described in the respective embodiments can be obtained in the semiconductor light emitting device, when the semiconductor light emitting device is mounted one-dimensionally, the one-dimensional mounting can be stably performed. The distance between the dot and the end face in the short direction can be reduced. Therefore, it becomes possible to create a higher definition HMD.

Embodiment 5 FIG.
FIG. 18 shows an example of use of the semiconductor light emitting device 123 (see FIG. 9) which is a two-dimensional LED array light emitting device described in the modification of the first embodiment. FIG. 4A is an external perspective view when the mobile terminal 451 is opened, and FIG. 2B is an external perspective view when the mobile terminal 451 is closed.

  As an image display unit of the portable terminal 451, generally, a main monitor 452 for displaying information such as dial operation confirmation, address book content confirmation, mail creation and content confirmation, Internet content browsing, one-seg viewing, There is a back monitor 453 that displays only partial information such as time, radio wave reception status, incoming call information, and the like. Mobile terminals are often used outdoors, and when the brightness of the main monitor 452 and the back monitor 453 as image display devices is not sufficient, information cannot be confirmed unless external light is blocked because the visibility is poor. There is a case.

  Here, the semiconductor light emitting device 123 (see FIG. 9), which is the two-dimensional LED array light emitting device described in the modification of the first embodiment, is used as the LED display in the main monitor 452 and the back monitor 453, For example, as described with reference to FIG. 9, a plurality of two-dimensional LED array light emitting elements can be two-dimensionally mounted with high accuracy, and a gap generated between adjacent chips can be minimized.

  As described above, the semiconductor light-emitting element 123 (see FIG. 9) that is a two-dimensional LED array light-emitting element described in the modification of the first embodiment is used in the main monitor 452 and the back monitor 453. According to the portable terminal, since the effects described in the first and second embodiments can be obtained, two-dimensional LED array light-emitting elements can be stably two-dimensionally mounted when two-dimensionally mounted on a printed wiring board. In addition, the distance between the element end dot and the dicing end face in each light emitting element can be reduced as much as possible. Therefore, it is possible to create a high-definition LED display as an image display device.

  In the above claims and the description of the embodiments, the words “upper” and “lower” are used for the sake of convenience, and the absolute position in the state in which the semiconductor light emitting element is arranged. It does not limit the relationship.

DESCRIPTION OF SYMBOLS 101 Semiconductor light emitting element, 102 formation board, 103 passivation film, 104 planarization film, 105 Ni layer, 106 AuGeNi layer, 107 bonding metal, 108 semiconductor thin film light emitting element, 109 lower contact layer, 110 lower clad layer, 111 light emission Layer, 112 upper cladding layer, 113 upper contact layer, 114 light emitting mesa, 115 upper connection wiring, 116 interlayer insulating film, 117 epitaxial wafer, 118 growth substrate, 119 sacrificial layer, 120 lower electrode connection pad, 121 upper electrode connection Pad, 122 dicing blade, 123 semiconductor light emitting device, 124 printed circuit board, 125 forming substrate, 126 insulating film, 127 Ni layer, 128 AuGeNi layer, 129 bonding metal, 130 lower contact layer, 13 Lower clad layer, 132 light emitting layer, 133 upper clad layer, 134 upper contact layer, 135 semiconductor thin film light emitting element, 136 upper common connection wiring, 137 interlayer insulating film, 138 light emitting pixel, 201 semiconductor light emitting element, 202 formation substrate, 203 Passivation layer, 204 flattening film, 205 connecting part, 211 photoresist, 212 back grinder, 213 surface protective tape, 301 LED printer, 302 process unit, 303 process unit, 304 process unit, 305 process unit, 306 recording paper, 307 Conveyance path, 308 Photosensitive drum, 309 Charging device, 310 Exposure device, 311 Developing device, 312 Cleaning device, 313 Paper cassette, 314 Hopping roller, 315 pins Roller 316 pinch roller 317 registration roller 318 transport roller 319 transfer roller 320 discharge roller 321 pinch roller 322 discharge roller 323 pinch roller 324 fixing device 325 stacker unit 401 HMD 402 HMD image forming unit , 403 reflecting surface, 404 display image, 405 one-dimensional LED array element, 406 scanning mirror, 407 convex lens, 409 viewpoint, 451 mobile terminal, 452 main monitor, 453 back monitor.

Claims (14)

A bonded substrate;
A bonding metal formed on the bonding substrate;
A semiconductor thin-film light-emitting element having a plurality of light-emitting portions and bonded onto the bonding metal,
The bonding metal has an outermost layer formed of AuGeNi, and an adhesion improving layer with the bonding substrate is formed of Ni.
A semiconductor light emitting device, wherein the light emitting portions are arranged one-dimensionally or two-dimensionally.   The semiconductor light emitting element according to claim 1, wherein the bonding substrate includes a drive circuit that drives the light emitting unit to emit light.   The semiconductor light emitting element according to claim 1, wherein the light emitting portion has a common lower contact layer to obtain an ohmic contact with the bonding metal.   4. The semiconductor light emitting device according to claim 3, wherein the bonding substrate includes connection pads that are electrically connected to the bonding metal.   An image forming apparatus using a one-dimensional LED array light source on which the semiconductor light-emitting element according to claim 1 is mounted in one dimension as an exposure apparatus.   6. The image forming apparatus according to claim 5, wherein the image forming apparatus is an LED printer using the exposure apparatus.   An image display device, wherein the one-dimensional LED array light source on which the semiconductor light-emitting element according to any one of claims 1 to 4 is mounted one-dimensionally is scanned and displayed two-dimensionally.   8. The image display device according to claim 7, wherein the image display device is an HMD.   5. An image display device, wherein the semiconductor light emitting element according to claim 1 is mounted two-dimensionally and one display image is displayed by the plurality of mounted semiconductor light emitting elements.   The image display device according to claim 9, wherein the image display device is a monitor of a portable terminal. Forming a planarization film on the bonding substrate;
Forming a bonding metal composed of an Ni layer as an adhesion improving layer and an AuGeNi layer as an outermost layer of a bonding surface on the planarizing layer;
Bonding a semiconductor thin-film light-emitting element having a plurality of light-emitting portions to the bonding surface;
Patterning by wet etching so as to remove the portion of the bonding metal existing in the dicing region;
And a step of dicing in the dicing region.   12. The method of manufacturing a semiconductor light-emitting element according to claim 11, wherein the wet etching is performed to pattern an end portion of the bonding metal in a direction approaching an end of the semiconductor thin film light-emitting element.   13. The method of manufacturing a semiconductor light emitting element according to claim 11, wherein the dicing is performed with a dicing blade.   13. The method of manufacturing a semiconductor light emitting element according to claim 11, wherein the dicing is performed by deep etching by dry etching and back grinding of the lower surface of the bonding substrate.

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