JP2015122137A - 熱補助型磁気記録(hamr)媒体のための熱拡散プラズモン下層としての熱的に安定したau合金 - Google Patents
熱補助型磁気記録(hamr)媒体のための熱拡散プラズモン下層としての熱的に安定したau合金 Download PDFInfo
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- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
- G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
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- G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
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Abstract
Description
本出願において開示されるAu−X合金を含むプラズモン下層は、HAMR媒体において使用される在来のヒートシンク下層に比し大幅に改善された熱伝導率をもっている。たとえば、Au−Ni合金およびAu−Rh合金の熱伝導率のプロットを示す図9を参照する。
本出願において開示されるAu−X合金を含むプラズモン下層は、HAMR媒体において使用される在来のヒートシンク下層と比較して大幅に改善された熱伝導率のみならず、大幅に改善された熱的安定性ももっている。この有利な熱的安定性は、種々の焼鈍温度におけるスパッタAu薄膜および約1.75at%のRh含有スパッタAu−Rh薄膜の粒子サイズの漸進的変化を比較することより観察することができる。たとえば、図10A〜10Dは、種々の温度、たとえば100℃〜400℃において15時間焼鈍後のスパッタAu薄膜のSEM画像を示す。図10Aから図10Dへの変更に関して、漸進的に高温にしてAu薄膜の焼鈍を行うと観察可能な粒成長をもたらすことを示している。
高い熱伝導率および熱安定性に加えて、本出願において開示されたAu−X合金を含むプラズモン下層は、HAMR記録において一般的に使用される波長、たとえば約700nmと約900nmの間の波長に適切かつ有利な光特性(たとえば、光定数n,k)をもっている。これらの有利な光特性は、一部の方法において、本出願において開示されたAu−X合金に関する(n,k)光定数の分析により測定/定量化することができる。
112 ディスク
113 スライダ
114 スピンドル
115 サスペンション
118 ディスクドライブモータ
119 アクチュエータアーム
121 ライト部
122 ディスク表面
123 ライン
125 記録チャネル
127 アクチュエータ
128 ライン
129 制御装置
212 下層
214 被覆コーティング
216 基体
218 書き込み磁極
219 帰還磁極
220 光源
222 近接場トランスデューサ
224 導波管
226 ヒートシンク層
302 上側帰還磁極
306 主磁極
308 ステッチ磁極
310 コイル
312 コイル
314 シールド
316 絶縁物
322 センサシールド
324 センサシールド
326 センサ
400 システム
402 下側帰還磁極層
404 バックギャップ層
406 上側帰還磁極層
412 クラッディング層
414 磁気ステップ層
416 磁極リップ
800 磁気媒体
801 磁気媒体
802 基体層
803 磁気媒体
804 接着層
805 複数層化されたプラズモン下層
806 プラズモン下層
807 プラズモン下層
808 磁気記録層
809 プラズモン下層
810 磁気記録層
812 磁気粒子
814 保護薄膜
816 潤滑剤
Claims (25)
- Au合金を含むプラズモン下層であって、前記Au合金は、Auに実質的に混合しない1つ以上の合金構成要素を含む、プラズモン下層と、
前記プラズモン下層の上の磁気記録層と
を含む磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が、Rh、Mo、W、Co、Pt、Ru、BおよびNiから構成されるグループから選択される、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が前記プラズモン下層内に不均一に分布している、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約0.5at%〜約8at%の量のRhを含む、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約0.5at%〜約25at%の量のNiを含む、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約0.5at%〜約8at%の量のWを含む、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約0.5at%〜約8at%の量のMoを含む、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記プラズモン下層が少なくとも約30W/m−Kの熱伝導率を有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約1.2at%以下の量のRhを含み、かつ、前記プラズモン下層が約100W/m−K以上の熱伝導率を有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素が約3.8at%以下の量のNiを含み、かつ、前記プラズモン下層が約100W/m−K以上の熱伝導率を有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記プラズモン下層が約10nm〜約100nmの間の厚さを有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素がAu粒子境界をほぼ取り囲む、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記1つ以上の合金構成要素がAuの融点より高い融点を有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
第2の金合金を含む第2のプラズモン下層をさらに含み、前記第2の金合金がAuに実質的に混合しない1つ以上の合金構成要素を含む、磁気媒体。 - 請求項14に記載の磁気媒体において、
前記第2の金合金中の前記1つ以上の合金構成要素が、Rh、Mo、W、Co、Pt、Ru、BおよびNiから構成されるグループから選択され、前記第2の金合金の前記1つ以上の合金構成要素は、前記金合金中の前記1つ以上の合金構成要素とは異なる、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記プラズモン下層が1nm未満の表面粗度を有する、磁気媒体。 - 請求項1に記載の磁気媒体において、
前記プラズモン下層が、約100℃〜約400℃より高い温度において粒成長および形態的変化に耐える物理特性を有する、磁気媒体。 - 複数層化されたプラズモン下層と、
前記複数層化されたプラズモン下層の上の磁気記録媒体と
を含む磁気媒体。 - 請求項18に記載の磁気媒体において、
前記複数層化されたプラズモン下層の各層が、Auに実質的に混合しない1つ以上の合金構成要素をもつAu合金を含む、磁気媒体。 - 請求項19に記載の磁気媒体において、
各Au合金層中の前記1つ以上の合金構成要素が、Rh、Mo、W、Co、Pt、Ru、BおよびNiから構成されるグループから独立に選択される、磁気媒体。 - 請求項18に記載の磁気媒体において、
前記複数層化されたプラズモン下層が少なくとも2つの交代層を含み、
前記交代層の一方が純金であり、かつ、
前記交代層の他方が、Auに実質的に混合しない1つ以上の合金構成要素をもつAu合金を含む、磁気媒体。 - 請求項21に記載の磁気媒体において、
各Au合金層中の前記1つ以上の合金構成要素が、Rh、Mo、W、Co、Pt、Ru、BおよびNiから構成されるグループから独立に選択される、磁気媒体。 - 請求項18に記載の磁気媒体において、
前記複数層化されたプラズモン下層の合計厚さが約10nm〜約100nmの間である、磁気媒体。 - 少なくとも1つ磁気ヘッドと、
請求項1に記載の磁気媒体と、
前記磁気媒体に前記少なくとも1つの磁気ヘッドの上を通過させる駆動メカニズムと、
前記少なくとも1つの磁気ヘッドの動作を制御するために前記少なくとも1つの磁気ヘッドに電気的に結合されるコントローラと
を含む磁気データ記憶システム。 - 請求項24に記載の磁気データ記憶システムにおいて、
前記少なくとも1つの磁気ヘッドが、
近接場トランスデューサと、
前記近接場トランスデューサを照射するように構成される光導波管と、
書き込み磁極と
をさらに含む、磁気データ記憶システム。
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