JP2015043414A - 高電圧iv族イナーブルスイッチを備えるモノリシック複合iii族窒化物トランジスタ - Google Patents
高電圧iv族イナーブルスイッチを備えるモノリシック複合iii族窒化物トランジスタ Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 78
- 239000002131 composite material Substances 0.000 title abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 85
- 239000010703 silicon Substances 0.000 claims description 85
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 84
- 230000007704 transition Effects 0.000 claims description 29
- 230000006911 nucleation Effects 0.000 claims description 19
- 238000010899 nucleation Methods 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 230000010354 integration Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 266
- 230000004888 barrier function Effects 0.000 description 27
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 15
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910021480 group 4 element Inorganic materials 0.000 description 3
- 239000007943 implant Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
本明細書で使用される、「III族窒化物」又は「III-N」は、窒素と、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)及びボロン(B)などの少なくとも1つのIII族元素とを含む化合物半導体を意味し、例えば窒化アルミニウムガリウム(AlxGa(1−x)N)、窒化インジウムガリウム(InyGa(1−y)N)、窒化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)N)、砒化リン化窒化ガリウム(GaAsaPbN(1−a−b))、砒化リン化窒化アルミニウムインジウムガリウム(AlxInyGa(1−x−y)AsaPbN(1−a−b))などの合金を含むが、これらに限定されない。また、III族窒化物は一般に、Ga極性、N極性、半極性又は非極性結晶方位などの任意の極性を有するが、これらに限定されない。また、III族窒化物材料は、ウルツ鉱型、閃亜鉛鉱型、あるいは混合ポリタイプ(結晶多形)のいずれかを含むことができ、単結晶又はモノクリスタル、多結晶、または非結晶の結晶構造を含むことができる。本明細書で使用される、窒化ガリウムまたはGaNは、III族窒化物化合物半導体を意味し、III族元素は若干量又は相当量のガリウムを含むが、ガリウムに加えて他のIII族元素も含むことができる。また、III−N又はGaNトランジスタはIII−N又はGaNトランジスタを低電圧IV族トランジスタとカスコード接続することによって形成される複合高電圧エンハンスモードトランジスタも意味する。
Claims (20)
- エンハンスモードVI族トランジスタ、及び、
少なくとも2つのデプリーションモードIII族窒化物トランジスタ、
を備えるモノリシック集積素子。 - 前記エンハンスモードVI族トランジスタは、シリコン絶縁ゲートバイポーラトランジスタ(シリコンIGBT)を有する、請求項1に記載のモノリシック集積素子。
- エミッタ及びゲートを内部に有する前記エンハンスモードIV族IGBTの本体層と、
前記エンハンスモードIV族IGBTのドリフト層と、
コレクタを内部に有する前記エンハンスモードIV族IGBTのコレクタ層と、をさらに備え、
前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、前記エンハンスモードIV族IGBTの前記本体層を覆うように配置されており、かつ、
前記エンハンスモードIV族IGBTの前記エミッタ及び前記ゲートは、前記モノリシック集積素子の上部側に配置されている、請求項2に記載のモノリシック集積素子。 - エミッタ及びゲートを内部に有する前記エンハンスモードIV族IGBTの本体層と、
前記エンハンスモードIV族IGBTのドリフト層と、
コレクタを内部に有する前記エンハンスモードIV族IGBTのコレクタ層と、をさらに備え、
前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、前記エンハンスモードIV族IGBTの前記コレクタ層を覆うように配置されており、かつ、
前記エンハンスモードIV族IGBTの前記コレクタは、前記モノリシック集積素子の上部側に配置されている、請求項2に記載のモノリシック集積素子。 - 前記エンハンスモードIV族トランジスタは、シリコン電界効果トランジスタ(シリコンFET)を備えている、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、III族窒化物FETを備えている、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、III族窒化物高電子移動度トランジスタ(III族窒化物HEMT)を備えている、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、III族窒化物遷移層を備えている、請求項1に記載のモノリシック集積素子。
- III族窒化物核形成層をさらに備え、前記III族窒化物遷移層は、前記III族窒化物核形成層を覆うように形成されている、請求項8に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、電力変換回路を形成している、請求項1に記載のモノリシック集積素子。
- 前記エンハンスモードIV族トランジスタは、FETを備えている、請求項10に記載のモノリシック集積素子。
- 前記エンハンスモードVI族トランジスタは、IGBTを備えている、請求項10に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタは、少なくとも1つのハーフブリッジ回路を形成している、請求項1に記載のモノリシック集積素子。
- 前記少なくとも1つのハーフブリッジ回路は、電力変換回路として構成されている、請求項13に記載のモノリシック集積素子。
- モノリシック集積は、シリコン基板上に形成されたIII族窒化物エピタキシャル層に基づいている、請求項1に記載のモノリシック集積素子。
- 前記エンハンスモードIV族トランジスタは、前記シリコン基板上及び/または前記シリコン基板内に配置されている、請求項15に記載のモノリシック集積素子。
- 前記エンハンスモードのVI族トランジスタは、イナーブルスイッチとして構成されている、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードIII族窒化物トランジスタの少なくとも1つは、少なくとも1つの相互接続ビアを使用して、前記エンハンスモードVI族トランジスタと電気的に接続されている、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードのIII族窒化物トランジスタの少なくとも1つは、絶縁ゲート電極をさらに備える、請求項1に記載のモノリシック集積素子。
- 前記少なくとも2つのデプリーションモードのIII族窒化物トランジスタの少なくとも1つは、少なくとも1つの基板のビアを使用して、前記エンハンスモードのVI族トランジスタと電気的に接続されている、請求項1に記載のモノリシック集積素子。
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US14/327,495 US9184243B2 (en) | 2013-07-12 | 2014-07-09 | Monolithic composite III-nitride transistor with high voltage group IV enable switch |
US14/327,495 | 2014-07-09 |
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