JP2015023257A - 基板処理方法、及び、基板処理装置 - Google Patents
基板処理方法、及び、基板処理装置 Download PDFInfo
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 112
- 239000007788 liquid Substances 0.000 claims abstract description 102
- 239000002826 coolant Substances 0.000 claims abstract description 94
- 239000000110 cooling liquid Substances 0.000 claims abstract description 57
- 238000009792 diffusion process Methods 0.000 claims abstract description 22
- 239000000243 solution Substances 0.000 claims description 153
- 238000001816 cooling Methods 0.000 claims description 42
- 238000000034 method Methods 0.000 claims description 17
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- 238000003892 spreading Methods 0.000 claims description 7
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- 230000007423 decrease Effects 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 239000000112 cooling gas Substances 0.000 description 8
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007599 discharging Methods 0.000 description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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Abstract
【解決手段】 ウェハWの表面にレジスト液を供給してレジスト液の膜を形成する基板処理方法は、冷却剤供給工程と、薬液供給工程と、薬液拡散工程とを有する。冷却剤供給工程は、レジスト液がウェハWの外周部に到達する前に行われるものであり、ウェハWを回転させながらウェハWの外周部の下面又は/及び上面から冷却液を供給して外周部の温度を下げる。薬液供給工程は、ウェハWの表面上にレジスト液を供給する。薬液拡散工程は、レジスト液をウェハW上で外周部まで拡散させてレジスト液の膜を形成する。
【選択図】 図5
Description
Claims (14)
- 基板の表面に薬液を供給して前記薬液の膜を形成する基板処理方法であって、
前記基板を回転させながら前記基板の外周部の下面又は/及び上面から冷却剤を供給して前記外周部の温度を下げる冷却剤供給工程と
前記基板の表面上に前記薬液を供給する薬液供給工程と、
前記薬液を前記基板上で前記外周部まで拡散させて前記薬液の膜を形成する薬液拡散工程と、
を有し、
前記冷却剤供給工程は、前記薬液が前記基板の外周部に到達する前に行われる、基板処理方法。 - 前記冷却剤供給工程が行われた後、前記薬液供給工程が行われる前に、前記基板に供給される前記薬液の拡散を促進させるプリウェット液を前記基板の表面上に供給して広げるプリウェット液拡散工程が更に行われる、請求項1に記載の基板処理方法。
- 前記冷却剤供給工程では、前記基板の表面上に前記薬液が供給される前に前記基板の外周部を冷却する、請求項1又は2に記載の基板処理方法。
- 前記冷却剤供給工程は、前記薬液拡散工程で薬液が前記基板の前記外周部に到達した後、更に基板の下面から冷却液を供給する工程を有する、請求項1から3のいずれか一項に記載の基板処理方法。
- 前記冷却剤供給工程の前記冷却剤は、ガス及び液体のいずれか一方又は両方である、請求項1から4のいずれか一項に記載の基板処理方法。
- 前記液体による前記冷却剤供給工程の後、前記液体の蒸発を促進させるガスを前記基板の外周部に供給する工程を有する、請求項5に記載の基板処理方法。
- 前記冷却剤供給工程の前記冷却剤は、互いに蒸気圧の異なる複数の液体によって構成される、請求項5に記載の基板処理方法。
- 基板の表面上で薬液を広げて前記薬液の膜を形成する基板処理装置であって、
前記基板の表面上に薬液を供給する薬液供給部と、
前記薬液供給部から供給された前記薬液が前記基板の外周部に到達する前に、前記基板の外周部の下面又は/及び上面から冷却剤を供給して前記基板の外周部を冷却する冷却部と、
を備える基板処理装置。 - 前記基板を回転させて前記基板の表面上の薬液を拡散させる回転部を更に備え、
前記回転部は、前記冷却部によって前記基板を冷却する際に前記基板を回転させる、
請求項8に記載の基板処理装置。 - 前記薬液供給部は、前記薬液を供給する前に、前記薬液の拡散を促進させるプリウェット液を前記基板の表面上に供給する、請求項8又は9に記載の基板処理装置。
- 前記冷却部は、前記基板の表面上に前記薬液が供給される前に前記基板の外周部を冷却する、請求項8から10のいずれか一項に記載の基板処理装置。
- 前記冷却部は、前記薬液が前記基板の外周部に到達した後、更に、前記基板の外周部に前記冷却剤を供給する、請求項8から11のいずれか一項に記載の基板処理装置。
- 前記冷却剤は、ガス及び液体のいずれか一方又は両方である、請求項8から12のいずれか一項に記載の基板処理装置。
- 前記冷却部は、前記冷却剤を前記基板に供給するノズル位置を可変させる駆動機構を更に備える、請求項8から13のいずれか一項に記載の基板処理装置。
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JP2013152987A JP5837008B2 (ja) | 2013-07-23 | 2013-07-23 | 基板処理方法 |
KR1020140085962A KR101608142B1 (ko) | 2013-07-23 | 2014-07-09 | 기판 처리 방법 및 기판 처리 장치 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021044500A (ja) * | 2019-09-13 | 2021-03-18 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
US20220189762A1 (en) * | 2017-09-22 | 2022-06-16 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03230518A (ja) * | 1990-02-05 | 1991-10-14 | Nec Corp | 薬液塗布装置 |
JPH05243140A (ja) * | 1992-02-27 | 1993-09-21 | Fujitsu Ltd | 回転塗布装置及び回転塗布方法 |
JPH05259062A (ja) * | 1992-03-10 | 1993-10-08 | Kawasaki Steel Corp | 半導体基板のスピンコーティング方法 |
JPH08264412A (ja) * | 1995-03-20 | 1996-10-11 | Nittetsu Semiconductor Kk | 半導体装置製造工程における塗布液の塗布方法 |
JPH10149964A (ja) * | 1996-11-19 | 1998-06-02 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
JP2003007669A (ja) * | 2001-06-25 | 2003-01-10 | Tokyo Electron Ltd | 基板の処理装置 |
JP2006351595A (ja) * | 2005-06-13 | 2006-12-28 | Hitachi High-Technologies Corp | 基板処理装置、基板処理方法、及び基板の製造方法 |
JP2013004614A (ja) * | 2011-06-14 | 2013-01-07 | Toshiba Corp | 塗布膜形成方法及び塗布膜形成装置 |
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2013
- 2013-07-23 JP JP2013152987A patent/JP5837008B2/ja active Active
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- 2014-07-09 KR KR1020140085962A patent/KR101608142B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03230518A (ja) * | 1990-02-05 | 1991-10-14 | Nec Corp | 薬液塗布装置 |
JPH05243140A (ja) * | 1992-02-27 | 1993-09-21 | Fujitsu Ltd | 回転塗布装置及び回転塗布方法 |
JPH05259062A (ja) * | 1992-03-10 | 1993-10-08 | Kawasaki Steel Corp | 半導体基板のスピンコーティング方法 |
JPH08264412A (ja) * | 1995-03-20 | 1996-10-11 | Nittetsu Semiconductor Kk | 半導体装置製造工程における塗布液の塗布方法 |
JPH10149964A (ja) * | 1996-11-19 | 1998-06-02 | Dainippon Screen Mfg Co Ltd | 塗布液塗布方法 |
JP2003007669A (ja) * | 2001-06-25 | 2003-01-10 | Tokyo Electron Ltd | 基板の処理装置 |
JP2006351595A (ja) * | 2005-06-13 | 2006-12-28 | Hitachi High-Technologies Corp | 基板処理装置、基板処理方法、及び基板の製造方法 |
JP2013004614A (ja) * | 2011-06-14 | 2013-01-07 | Toshiba Corp | 塗布膜形成方法及び塗布膜形成装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20220189762A1 (en) * | 2017-09-22 | 2022-06-16 | SCREEN Holdings Co., Ltd. | Substrate processing method and substrate processing apparatus |
JP2021044500A (ja) * | 2019-09-13 | 2021-03-18 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
JP7344726B2 (ja) | 2019-09-13 | 2023-09-14 | 東京エレクトロン株式会社 | 塗布処理方法、塗布処理装置及び記憶媒体 |
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KR20150011762A (ko) | 2015-02-02 |
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