JP2015023148A - Method for processing wafer - Google Patents

Method for processing wafer Download PDF

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Publication number
JP2015023148A
JP2015023148A JP2013150082A JP2013150082A JP2015023148A JP 2015023148 A JP2015023148 A JP 2015023148A JP 2013150082 A JP2013150082 A JP 2013150082A JP 2013150082 A JP2013150082 A JP 2013150082A JP 2015023148 A JP2015023148 A JP 2015023148A
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wafer
holding
height position
outer peripheral
cutting
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JP2013150082A
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JP6195484B2 (en
Inventor
淳 小松
Atsushi Komatsu
淳 小松
広希 大沼
Hiroki Onuma
広希 大沼
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株式会社ディスコ
Disco Abrasive Syst Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a wafer processing method capable of controlling the cutting depth of a cutting blade into a wafer with higher accuracy at the time of edge trimming. A method of processing a wafer in which an outer peripheral edge of a wafer is cut into a ring shape with a cutting blade, wherein at least a holding surface for holding the outer peripheral edge of the wafer and a rotation axis orthogonal to the holding surface at the center of the holding surface are provided. A holding table having a height position detecting step of detecting the height position of the holding surface at a plurality of points in a region where the outer peripheral edge of the wafer is placed, and the holding table after performing the height position detecting step. A holding step for holding the wafer at the cutting step, and a cutting blade rotating on the outer peripheral edge of the wafer held on the holding table is cut to a predetermined depth and the holding table is rotated so that the outer peripheral edge of the wafer is cut with the cutting blade. A cutting step for cutting in an annular shape, wherein the cutting step is based on the height position of the holding surface detected in the height position detecting step. The wafer is cut into an annular shape while changing the height position of the card. [Selection] Figure 3

Description

  The present invention relates to a wafer processing method in which an outer peripheral edge of a wafer is cut into a ring shape with a cutting blade.

  In the manufacturing process of a semiconductor device, a grid-like division planned line called street is formed on the surface of a wafer made of silicon or a compound semiconductor. Then, a device such as an IC or LSI is formed in each area partitioned by the division lines.

  These wafers are ground and / or polished to a predetermined thickness and then thinned to a predetermined thickness, and then cut along the streets with a cutting device and divided into individual chips to manufacture semiconductor devices. . The semiconductor device manufactured in this way is widely used in various electric devices such as mobile phones and personal computers.

  A chamfered portion having an arc surface extending from the front surface to the back surface is formed on the outer periphery of the wafer. Therefore, if the wafer is thinned by grinding the backside of the wafer, the knife edge formed by the circular arc surface and the ground surface remains in the chamfered part, which is dangerous, and the outer periphery is chipped, resulting in deterioration of the device quality. I will let you.

  Japanese Patent Application Laid-Open No. 2000-173961 discloses a so-called edge trimming method, ie, a peripheral processing method in which a chamfered portion of a wafer is removed with a cutting blade before grinding the back surface of the wafer.

  The chamfered portion is removed, for example, by performing circular processing with a cutting blade having a thickness of 0.5 mm to 1 mm. The wafer from which the chamfered portion has been removed is ground along the back surface by a grinding apparatus, and then cut along the street with a cutting blade having a thickness of about 30 μm, for example, and divided into individual chips.

JP 2000-173961 A

  However, if there is variation in the cutting depth at the time of edge trimming in which the chamfered portion of the wafer is removed by the cutting blade, there is a possibility that the knife edge locally remains on the wafer after grinding.

  In addition, in a laminated wafer in which the main wafer is arranged on the support wafer, if you want to perform edge trimming that completely cuts the main wafer, if the cutting depth varies, the parts that do not cut the main wafer completely or the support There is a possibility that a region where the cutting blade cuts into the wafer is generated.

  The present invention has been made in view of the above points, and an object of the present invention is to provide a wafer processing method capable of controlling the cutting depth of a cutting blade into a wafer with higher accuracy during edge trimming. Is to provide.

  According to the present invention, there is provided a wafer processing method in which an outer peripheral edge of a wafer is cut into an annular shape with a cutting blade, the holding surface holding at least the outer peripheral edge of the wafer, and a rotation axis orthogonal to the holding surface at the center of the holding surface A holding table having a height position detecting step for detecting the height position of the holding surface at a plurality of points in a region where the outer peripheral edge of the wafer is placed, and after the height position detecting step, the holding position In the holding step for holding the wafer on the table, and in the cutting step, the wafer is annularly changed while changing the height position of the cutting blade based on the height position of the holding surface detected in the height position detecting step. A wafer processing method characterized by cutting is provided.

  Preferably, in the height position detecting step, the height position detecting means faces the holding surface at a first point of a region where the outer peripheral edge of the wafer of the holding table is placed. After detecting the height position, the holding table is rotated around the rotation axis, and the height position detecting means is provided on the holding surface at a second point of the area where the outer peripheral edge of the wafer of the holding table is placed. The height position of the holding surface is detected while facing each other.

  In the wafer processing method of the present invention, the height position detecting step of detecting the height position of the holding surface of the holding table is performed before cutting the wafer with the cutting blade. In the cutting step, since the height position of the cutting blade is changed based on the height position of the holding surface detected in the height position detection step, the depth of cutting of the cutting blade into the wafer is increased during edge trimming. It can be controlled accurately.

1 is a perspective view of a cutting apparatus suitable for carrying out the wafer processing method of the present invention. It is a longitudinal cross-sectional view of a holding table. It is a partial side surface longitudinal cross-sectional view which shows a height position detection step. It is a top view of the holding table explaining a height position detection step. It is a figure which shows an example of the height position of the holding surface detected at the height position detection step. It is a partial cross section side view which shows a cutting step.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Referring to FIG. 1, an external perspective view of a cutting device 2 suitable for carrying out the wafer processing method of the present invention is shown.

  On the front side of the cutting device 2, an operation panel 4 is provided for an operator to input instructions to the device such as machining conditions. In the upper part of the apparatus, a display unit 6 such as a CRT for displaying a guidance screen for an operator and an image captured by the imaging unit is provided.

  A plurality of wafers (for example, 25 sheets) are stored in the storage cassette 8. The accommodating cassette 8 is placed on a cassette elevator 9 that can move up and down. A loading / unloading unit 10 for unloading the wafer before cutting from the storage cassette 8 and loading the wafer after cutting into the storage cassette 8 is disposed behind the storage cassette 8.

  The carry-in / out unit 10 has a clamp 11, and the clamp 11 grips the wafer and carries the wafer into and out of the storage cassette 8. The carry-in / out unit 10 is linearly moved in the Y-axis direction.

  Between the storage cassette 8 and the carry-in / out unit 10, a temporary placement region 12, which is a region on which a wafer to be carried in / out, is temporarily placed, is provided. In the temporary placement region 12, the wafer is centered. A pair of positioning members 14 are disposed.

  A transport unit 16 having a swivel arm that sucks and transports the wafer is disposed in the vicinity of the temporary placement area 12, and the wafer carried to the temporary placement area 12 is sucked by the transport unit 16 and held by the holding table. (Chuck table) 18 is conveyed onto and held by suction by the holding table 18.

  The holding table 18 is configured to be rotatable and reciprocally movable in the X-axis direction, and the alignment unit 30 detects an area of the wafer to be cut above the movement path of the holding table 18 in the X-axis direction. It is installed.

  The alignment unit 30 includes an image pickup unit 32 having an image pickup device for picking up an image of the wafer surface and a microscope, and can detect a region to be cut by image processing such as pattern matching based on an image acquired by image pickup. . The image acquired by the imaging unit 32 is displayed on the display unit 6. A back pressure sensor 33 as a height position detecting unit is disposed adjacent to the imaging unit 32.

  On the left side of the alignment unit 30, a cutting unit 34 for cutting the wafer held on the holding table 18 is disposed. The cutting unit 34 is configured integrally with the alignment unit 30 and moves in the Y-axis direction and the Z-axis direction in conjunction with each other.

  The cutting unit 34 is configured by attaching a cutting blade 38 to the tip of a rotatable spindle 36 and is movable in the Y-axis direction and the Z-axis direction. The cutting blade 38 is located on the extension line of the imaging unit 32 in the X-axis direction.

  Reference numeral 40 denotes a transport unit that adsorbs the transported wafer and transports it to the spinner cleaning unit 42, where the wafer is spin cleaned and spin dried.

  Referring to FIG. 2, there is shown a longitudinal sectional view of a holding table 18 suitable for holding the outer peripheral portion of the wafer. The holding table 18 includes a base (frame body) 20 formed of a metal such as SUS, and an annular holding portion 22 having an annular holding surface 22 a that holds a wafer attached on the base 20. The holding table 18 further has a central recess 24 surrounded by the annular holding portion 22.

  Preferably, the annular holding part 22 is formed from a conductive resin. By forming the annular holding portion 22 from a conductive resin, it is possible to prevent contamination from adhering to the annular holding portion 22 due to static electricity.

  The holding table 18 of the present embodiment is not formed entirely of resin, but the base 20 is formed of metal such as SUS, and only the annular holding portion 22 is formed of resin, thereby maintaining the rigidity of the holding table 18. be able to.

  A suction path 21 that is selectively connected to the base 20 via an electromagnetic switching valve (not shown) and a fluid passage that is selectively connected to the liquid supply source 28 via an electromagnetic switching valve (not shown). 23 is formed.

  An annular suction passage 25 connected to the suction passage 21 of the base 20 and an annular fluid passage 27 connected to the fluid passage 23 are formed in the annular holding portion 22. On the annular holding surface 22 a of the annular holding part 22, an annular suction port 25 a that communicates with the annular suction path 25 and an annular liquid ejection port 27 a that communicates with the annular fluid flow path 27 are opened.

  Instead of the annular suction port 25a, a plurality of circumferentially spaced suction ports are formed, and instead of the annular liquid jet port 27a, a plurality of circumferentially spaced liquid jet ports are provided. Also good.

  By using the above-described holding table 18 having the annular holding portion 22 and the central concave portion 24 for sucking and holding the wafer, the risk of scratches and contamination on the wafer can be reduced. However, the holding table used in the wafer processing method of the present invention is not limited to the above-described embodiment, and a normal holding table having a large area holding surface may be used.

  Next, the height position detection step will be described with reference to FIGS. 3 and 4. A conventionally known back pressure sensor can be used as the back pressure sensor 33, and the back pressure sensor 33 is attached to a housing that houses the alignment unit 30 adjacent to the imaging unit 32. Instead of the back pressure sensor 33, a laser displacement meter may be used as the height position detecting means.

  In the height position detecting step, the height position of the holding surface 22a is detected at a plurality of points 35 while the back pressure sensor 33 faces the holding surface 22a and the holding table 18 is rotated in the arrow B direction around the rotation shaft 18a. 2, 3, and 6, the rotation shaft 18 a of the holding table 18 and the suction path coincide with each other.

  For example, as shown in FIG. 4, the height position is detected at 12 points indicated by reference numeral 35. While the holding table 18 is rotated in the direction of arrow B in FIG. 3, the height position is first detected at point P1, then the height position is detected at point P2, and the height position of the holding surface 22a is further detected at point P3. To do. You may make it detect continuously the height position of the perimeter of the holding surface 22a.

  It is preferable to detect the height position of the holding surface 22a at a location close to the position where the cutting blade 38 cuts into the wafer 11. An example of the change in the height position of the holding surface 22a detected in this way is shown in FIG.

  After performing the height position detection step, as shown in FIG. 6, a holding step for sucking and holding the wafer 11 by the holding surface 22 a of the holding table 18 is performed. In this holding step, after the wafer 11 is placed on the holding surface 11a of the holding table 18, the suction path 21 is connected to the suction source 26, and negative pressure is applied to the annular suction port 25a to hold the wafer 11 by suction. .

  After the wafer 11 is held by the holding table 18 in this way, the cutting blade 38 that rotates at high speed in the direction of arrow A is cut into the outer peripheral edge of the wafer 11 to a predetermined depth and the holding table 18 is rotated in the direction of arrow B. A cutting step is performed in which the outer peripheral edge of the wafer 11 is cut into a ring shape by the cutting blade 38.

  In this cutting step, the outer peripheral edge of the wafer 11 is cut in an annular shape while changing the height position of the cutting blade 38 based on the height position of the holding surface 22a detected in the height position detecting step.

  In the wafer processing method of the above-described embodiment, the height position detecting step for detecting the height position of the holding surface 22a of the holding table 18 is performed before the wafer 11 is cut by the cutting blade 38.

  In the cutting step, since the height position of the cutting blade 38 is changed based on the height position of the holding surface 22a detected in the height position detecting step, the cutting depth of the cutting blade 38 into the wafer 11 during the edge trimming process. The thickness can be controlled with higher accuracy.

  In the height position detecting step of the above-described embodiment, the height position of the holding surface 22a is detected at a plurality of points while the back pressure sensor 33 faces the holding surface 22a and the holding table 18 is rotated about the rotation shaft 18. That is, since the height position detection step is performed in the same state as the cutting operation in the cutting step, the measurement error of the height position can be reduced.

11 Wafer 18 Holding table 20 Base 22 Annular holding part 22a Annular holding surface 33 Back pressure sensor 35 Height position detection point 38 Cutting blade

Claims (2)

  1. A wafer processing method in which an outer peripheral edge of a wafer is cut into a ring shape with a cutting blade,
    In a holding table having at least a holding surface for holding the outer peripheral edge of the wafer and a rotation axis orthogonal to the holding surface at the center of the holding surface, the height position of the holding surface in the region where the outer peripheral edge of the wafer is placed A height position detecting step for detecting at a plurality of points;
    A holding step of holding the wafer on the holding table after performing the height position detecting step;
    A cutting step in which a cutting blade rotating on the outer peripheral edge of the wafer held by the holding table is cut to a predetermined depth and the holding table is rotated to cut the outer peripheral edge of the wafer into an annular shape with the cutting blade; Prepared,
    In the cutting step, the wafer is cut into an annular shape while changing the height position of the cutting blade based on the height position of the holding surface detected in the height position detecting step. Method.
  2.   In the height position detecting step, the height position of the holding surface in a state where the height position detecting means faces the holding surface at the first point of the region where the outer peripheral edge of the wafer of the holding table is placed. Then, the holding table is rotated about the rotation axis so that the height position detecting means faces the holding surface at a second point of the area where the outer peripheral edge of the wafer of the holding table is placed. The wafer processing method according to claim 1, wherein the height position of the holding surface is detected in a state where the wafer is held.
JP2013150082A 2013-07-19 2013-07-19 Wafer processing method Active JP6195484B2 (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151586A (en) * 1992-11-12 1994-05-31 Sony Corp Method and device for dicing
JPH0917759A (en) * 1995-06-29 1997-01-17 Hitachi Cable Ltd Method and apparatus for chamfering semiconuctor wafer
JPH11345785A (en) * 1998-06-03 1999-12-14 Akita Denshi Kk Dicing method and device
JP2005191232A (en) * 2003-12-25 2005-07-14 Daido Steel Co Ltd Dicing device and dicing method
JP2012231058A (en) * 2011-04-27 2012-11-22 Disco Abrasive Syst Ltd Wafer processing method
JP2013012595A (en) * 2011-06-29 2013-01-17 Disco Abrasive Syst Ltd Processing method of wafer

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151586A (en) * 1992-11-12 1994-05-31 Sony Corp Method and device for dicing
JPH0917759A (en) * 1995-06-29 1997-01-17 Hitachi Cable Ltd Method and apparatus for chamfering semiconuctor wafer
JPH11345785A (en) * 1998-06-03 1999-12-14 Akita Denshi Kk Dicing method and device
JP2005191232A (en) * 2003-12-25 2005-07-14 Daido Steel Co Ltd Dicing device and dicing method
JP2012231058A (en) * 2011-04-27 2012-11-22 Disco Abrasive Syst Ltd Wafer processing method
JP2013012595A (en) * 2011-06-29 2013-01-17 Disco Abrasive Syst Ltd Processing method of wafer

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