JP2015005760A - Imprint device, and article manufacturing method - Google Patents

Imprint device, and article manufacturing method Download PDF

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Publication number
JP2015005760A
JP2015005760A JP2014156831A JP2014156831A JP2015005760A JP 2015005760 A JP2015005760 A JP 2015005760A JP 2014156831 A JP2014156831 A JP 2014156831A JP 2014156831 A JP2014156831 A JP 2014156831A JP 2015005760 A JP2015005760 A JP 2015005760A
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Japan
Prior art keywords
gas
mold
imprint
substrate
imprint apparatus
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JP2014156831A
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Japanese (ja)
Inventor
正幸 田邉
Masayuki Tanabe
正幸 田邉
田村 泰之
Yasuyuki Tamura
泰之 田村
羽生 由紀夫
Yukio Hanyu
由紀夫 羽生
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キヤノン株式会社
Canon Inc
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Abstract

An imprint apparatus is provided that is advantageous for achieving both accurate pattern formation and throughput.
An imprint apparatus (1) forms a pattern on a substrate (10) by forming and curing an imprint (12) material on the substrate (10) with a mold (8). The imprint apparatus 1 includes supply means 6 that supplies gas between the imprint material 12 on the substrate 10 and the mold 8. The supply means 6 supplies a mixed gas in which a permeable gas that permeates at least one of the mold 8, the imprint material 12, and the substrate 10 and a condensable gas that is liquefied by pressure generated by molding are mixed.
[Selection] Figure 1

Description

  The present invention relates to an imprint apparatus and an article manufacturing method.

  The demand for miniaturization of semiconductor devices has advanced, and in addition to conventional photolithography technology, microfabrication technology that forms uncured resin on a substrate with a mold and forms a resin pattern on the substrate attracts attention. Yes. This technique is also called an imprint technique, and can form a fine structure on the order of several nanometers on a substrate. For example, as one of imprint techniques, there is a photocuring method. In an imprint apparatus employing this photocuring method, first, an ultraviolet curable resin (imprint resin, photocurable resin) is applied to a shot area (imprint area) on a substrate (wafer). Next, this resin (uncured resin) is molded by a mold. Then, the resin pattern is formed on the substrate by irradiating ultraviolet rays to cure the resin and then releasing the mold.

  In this imprint apparatus, since the atmosphere in the apparatus is generally the air, when the mold and the resin are pressed against each other, the air stays between them, and there is a defect in the transferred pattern such as bubbles remaining in the resin as a residual gas. And accurate pattern formation may not be possible. Therefore, for example, Patent Document 1 discloses an imprint apparatus that uses a permeable gas in an imprint atmosphere and dissolves or diffuses the permeable gas remaining in a resin or a mold to quickly reduce the residual gas. Yes. On the other hand, Patent Document 2 discloses an imprint apparatus using a condensable gas that condenses due to an increase in pressure when a mold and a resin are pressed against an imprint atmosphere. This condensable gas is liquefied when it remains, and its volume is reduced to one hundredth compared to when it is gas, so that the influence of the residual gas on pattern formation can be suppressed.

US Pat. No. 7,090,716 Japanese Patent No. 3700001

  However, each of the imprint apparatuses shown in Patent Documents 1 and 2 has a disadvantage in achieving both accurate pattern formation and throughput. That is, the imprint apparatus disclosed in Patent Document 1 is disadvantageous than the imprint apparatus disclosed in Patent Document 2 in terms of time for reducing the residual gas. On the other hand, in the imprint apparatus of Patent Document 2, although the condensable gas is liquefied and the volume thereof is smaller than that at the time of gas, the presence of the liquid due to the liquefaction can affect the pattern formation.

  An object of the present invention is, for example, to provide an imprint apparatus that is advantageous for achieving both accurate pattern formation and throughput.

The present invention is an imprint apparatus for forming a pattern on the substrate by performing a pressing with a mold on an imprint material on the substrate,
Supply means for supplying a permeable gas that permeates at least one of the mold, the imprint material, and the substrate, and a condensable gas that is liquefied by a pressure increase by the pressing mold;
Supplying the permeable gas and the condensable gas between the imprint material and the mold to perform the stamping;
An imprint apparatus characterized by the above.

  According to the present invention, for example, it is possible to provide an imprint apparatus that is advantageous for achieving both accurate pattern formation and throughput.

It is a figure which shows the structure of the imprint apparatus which concerns on embodiment of this invention. It is a graph which shows the refractive index of each gas with respect to the wavelength of a measurement beam.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

  First, the configuration of an imprint apparatus according to an embodiment of the present invention will be described. FIG. 1 is a diagram illustrating a configuration of an imprint apparatus according to the present embodiment. This imprint apparatus is used for manufacturing a device such as a semiconductor device, and forms an imprint material (typically uncured resin) on a wafer (on a substrate), which is an object to be processed, with a mold (mold). An apparatus for forming a pattern (typically a resin pattern) on a substrate. Here, the imprint apparatus adopts a photocuring method. In the following figure, the Z axis is taken in parallel to the optical axis of the illumination system that irradiates the resin on the substrate with ultraviolet rays, and the X axis and the Y axis perpendicular to each other are taken in a plane perpendicular to the Z axis. ing. The imprint apparatus 1 includes an illumination system 2, a mold holding unit 3, a wafer stage 4, a coating unit 5, a gas supply unit 6, and a control unit 7.

  The illumination system 2 is illumination means for irradiating the mold 8 with ultraviolet rays during the imprint process. Although not shown, the illumination system 2 includes a light source and an optical element for adjusting the ultraviolet light emitted from the light source to light suitable for imprinting. The mold 8 is a mold in which a predetermined pattern (for example, an uneven pattern corresponding to a circuit pattern) is formed in a three-dimensional manner on the surface facing the wafer 10. The material of the mold 8 is a material that can transmit ultraviolet rays, such as quartz.

  The mold holding unit 3 is a holding unit that attracts and holds the mold 8 by a vacuum suction force or an electrostatic force. The mold holding unit 3 includes a mold chuck 9 and a mold driving mechanism (not shown) that drives the mold holding unit 3 in the Z-axis direction in order to press the mold 8 against the ultraviolet curable resin applied on the wafer 10. The pressing and releasing operations in the imprint apparatus 1 may be realized by moving the mold 8 in the Z direction as described above. For example, the wafer stage 4 (wafer 10) is moved in the Z direction. Or both of them may be moved.

  The wafer stage 4 is a holding unit including a wafer chuck 11 that holds the wafer 10 by, for example, vacuum suction and is movable in the XY plane. Here, the wafer 10 is an object to be processed made of, for example, single crystal silicon, and an ultraviolet curable resin (hereinafter simply referred to as “resin”) formed by the mold 8 is applied to the surface to be processed. The Further, the wafer stage 4 includes a plurality of reference mirrors (reflecting portions) 13 so that the positions of the six degrees of freedom (X, Y, Z, ωx, ωy, ωz) can be controlled around the wafer stage 4. The imprint apparatus 1 includes a plurality of laser interferometers (measuring means) 14 that measure the position of the wafer stage 4 by irradiating these reference mirrors 13 with beams. The laser interferometer 14 measures the position of the wafer stage 4 in real time, and the control unit 7 described later executes positioning control of the wafer 10 (wafer stage 4) based on this measurement value.

  The application unit 5 is application means for applying a resin 12 (uncured resin) on the wafer 10. Here, the resin 12 is a photo-curing resin (imprint material) having a property of being cured by receiving ultraviolet rays, and is appropriately selected depending on a semiconductor device manufacturing process or the like.

The gas supply unit 6 is a supply unit (supply unit) that supplies a mixed gas toward the mold position when performing a mold operation for pressing the mold 8 and the resin 12 on the wafer 10 together. The gas supply unit 6 first includes a permeable gas supply unit 20 that supplies a permeable gas having a property of dissolving or diffusing with respect to at least one of the mold 8, the resin 12, and the wafer 10. The gas supply unit 6 includes a condensable gas supply unit 21 that supplies a condensable gas having a property of condensing and liquefying when pressure is applied (pressure increase). Here, as the permeable gas, a gas such as helium or hydrogen can be employed. However, when flammable hydrogen is used as the permeable gas, it is necessary to separately install an explosion-proof system in the imprint apparatus 1 and to be careful of fire. On the other hand, as the condensable gas, HFC (hydrofluorocarbon) represented by HFC-245fa (1, 1, 1, 3, 3 pentafluoropropane, CHF 2 CH 2 CF 3 ) can be employed. However, the gas used for the condensable gas is not limited to this, and may be HFE (hydrofluoroether) typified by HFE-245mc (CF 3 CF 2 OCH 3 ), for example. Further, the gas supply unit 6 performs gas mixing by a gas mixing unit 22 that mixes gases supplied from the permeable gas supply unit 20 and the condensable gas supply unit 21, and a first valve 23 and a second valve 24. And a gas supply control unit 25 that controls the supply amount of each gas supplied to the unit 22. The gas supply control unit 25 mixes each gas into a desired component ratio in the gas mixing unit 22 and controls the third valve 26 to adjust the supply amount of the generated mixed gas while adjusting the supply amount. 27 is an adjustment unit that is supplied from 27 to a pressing position sandwiched between the mold 8 and the wafer 10. The gas supply control unit 25 may be installed alone in the imprint apparatus 1 and connected to the control unit 7 described later via a line, or may be configured integrally with the control unit 7. Also good.

  The control unit 7 can control the operation and adjustment of each component of the imprint apparatus 1. The control unit 7 is configured by a computer or the like, for example, is connected to each component of the imprint apparatus 1 via a line, and can control each component according to a program or the like. In the present embodiment, the control unit 7 controls at least processing operations of the laser interferometer 14 and the gas supply control unit 25 in addition to the operations of the mold holding unit 3 and the wafer stage 4. The control unit 7 may be configured integrally with other parts of the imprint apparatus 1 or may be installed at a place different from other parts of the imprint apparatus 1.

  Next, imprint processing by the imprint apparatus 1 will be described. First, the control unit 7 places and fixes the wafer 10 on the wafer stage 4 by a substrate transfer device (not shown), and then moves the wafer stage 4 to the coating position of the coating unit 5. Thereafter, the application unit 5 applies a resin (uncured resin) 12 to a predetermined shot (imprint region) of the wafer 10 as an application process. Next, the control unit 7 moves the wafer stage 4 so that the shot on the wafer 10 is located immediately below the mold 8. Next, the controller 7 aligns the mold 8 with the shot on the wafer 10 and corrects the magnification of the mold 8 by a magnification correction mechanism (not shown), and then drives the mold drive mechanism to drive the wafer 10. The mold 8 is pressed against the upper resin 12 (molding process). The resin 12 is filled in the recess formed in the mold 8 by this mold. In this state, the illumination system 2 irradiates ultraviolet rays from the back surface (upper surface) of the mold 8 as a curing process, and cures the resin by the ultraviolet rays that have passed through the mold 8. And after resin 12 hardens | cures, the control part 7 redrives a mold drive mechanism, and separates the mold 8 from the wafer 10 (mold release process). As a result, a layer of the resin 12 having a three-dimensional shape following the uneven pattern is formed on the surface of the shot on the wafer 10.

In particular, in the stamping process of the present embodiment, the control unit 7 causes the gas supply unit 6 to supply a mixed gas of permeable gas and condensable gas to the stamping position. FIG. 2 is a graph showing the relationship between the measurement beam wavelength of the laser interferometer 14 and the refractive index of each atmosphere of the atmosphere, a permeable gas, a condensable gas, and a mixed gas of the permeable gas and the condensable gas. It is. Here, the permeable gas is helium gas and the condensable gas is HFC-245fa gas. As described above, the permeable gas generally has a small molecular diameter, and the refractive index is smaller than that of the atmosphere, whereas the refractive index of the condensable gas is larger than that of the atmosphere. Therefore, at 1 atmosphere, when the refractive index of the atmosphere is n air , the refractive index of the permeable gas is n 1, and the refractive index of the condensable gas is n 2 , the relationship expressed by the following formula (1) is established. It holds.
n 1 <n air <n 2 (1)
Further, when the refractive index of the mixed gas of the permeable gas and the condensable gas at 1 atmosphere is n 3 , the refractive index difference between the permeable gas and the atmosphere is Δn 1 , and the refractive index between the condensable gas and the atmosphere is The difference is Δn 2 , and the refractive index difference between the mixed gas and the atmosphere is Δn 3 . Here, compared with the case where only permeable gas is used as the gas supplied to the pressing position, the difference between the refractive index of the surrounding atmosphere is smaller when the mixed gas is used, and the interference displacement measurement is reduced. The influence can be suppressed when the relationship shown in the following formula (2) is established.
| Δn 1 | >> | Δn 3 | (2)
On the other hand, compared to the case where only condensable gas is used as the gas to be supplied to the mold position, the difference in the refractive index of the surrounding atmosphere is smaller when the mixed gas is used, which affects the interference displacement measurement. Can be suppressed when the relationship shown in the following equation (3) holds.
| Δn 2 | >> | Δn 3 | (3)
In equations (2) and (3), each refractive index difference is an absolute value. That is, if a permeable gas and a condensable gas that satisfy the condition of the formula (1) are used, the conditions of the formula (2) and the formula (3) are inevitably satisfied. Compared to the case where a condensable gas is used alone, the influence on the interference displacement measurement can be suppressed.

  Further, when supplying a mixed gas of a permeable gas and a condensable gas to the stamping position in this way, two gas recovery nozzles 30 and 31 may be installed in the imprint apparatus 1. As shown in FIG. 1, the optical path of the laser interferometer 14 is lower than the upper surface of the wafer chuck 11. Here, since HFC-245fa in the mixed gas has a higher specific gravity than helium and the atmosphere, it is easily separated from the mixed gas and enters the interference displacement measurement region (optical path). Therefore, the helium component ratio may be set to be slightly higher than the ratio at which the refractive index is the same as that of the atmosphere. In that case, the refractive index of the supplied mixed gas is smaller than that of the atmosphere. Further, the imprint apparatus 1 includes the first gas recovery nozzle 30 at a position higher than the pressing position in the gravity direction, and includes the second gas recovery nozzle 31 at a position lower than the pressing position. The gas recovery nozzles 30 and 31 are connected to the first and second gas recovery units 32 and 33, respectively. With this configuration, the gas recovered by the first gas recovery unit 32 has a high abundance ratio of helium, while the gas recovered by the second gas recovery unit 33 has a high ratio of HFC-245fa. Therefore, helium and HFC-245fa separated in the imprint apparatus 1 can be efficiently recovered, which is advantageous for gas recycling. For example, when the optical path of the laser interferometer 14 is higher than the upper surface of the wafer chuck 11, the component ratio of HFC-245fa is set to be slightly higher than the ratio that gives the same refractive index as the atmosphere. Also good. In that case, the refractive index of the supplied mixed gas is larger than that of the atmosphere.

  Further, the control unit 7 may adjust the component ratio of the mixed gas based on the output of the laser interferometer 14 with the wafer stage 4 placed at a known position. For example, the control unit 7 causes the gas supply control unit 25 to change the component ratio of the mixed gas when the measured value at the time of supplying the mixed gas exceeds the allowable range based on the output. Instruct. On the other hand, when a detector that detects a gas component in the optical path atmosphere of the measurement beam is installed in the imprint apparatus 1 and the component value of the condensable gas exceeds the allowable range in the detected gas component, the control unit 7 The gas supply control unit 25 may be configured to change the component ratio of the mixed gas. In this case, the detector may be provided with an analyzer for analyzing the gas component. Here, the allowable range can be determined in consideration of the configuration and dimensions of the apparatus or the results of the imprint process so far. Thereby, for example, even when condensable gas or the like separated from the mixed gas at the time of supplying the mixed gas enters the optical path of the measurement beam and the output of the laser interferometer 14 is affected, it is possible to respond immediately.

  As described above, according to the present embodiment, the measurement by the laser interferometer 14 can be accurately performed while reducing the gas remaining between the mold 8 and the resin 12 in a short time. Therefore, it is possible to provide an imprint apparatus that is advantageous for achieving both accurate pattern formation and throughput.

(Product manufacturing method)
A method for manufacturing a device (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article includes a step of forming a pattern on a substrate (wafer, glass plate, film-like substrate) using the above-described imprint apparatus. Furthermore, the manufacturing method may include a step of etching the substrate on which the pattern is formed. In the case of manufacturing other articles such as patterned media (recording media) and optical elements, the manufacturing method may include other processing for processing a substrate on which a pattern is formed instead of etching. The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

DESCRIPTION OF SYMBOLS 1 Imprint apparatus 6 Gas supply part 8 Mold 10 Wafer 12 Resin

Claims (11)

  1. An imprint apparatus for forming a pattern on the substrate by performing a mold pressing on an imprint material on the substrate,
    Supply means for supplying a permeable gas that permeates at least one of the mold, the imprint material, and the substrate, and a condensable gas that is liquefied by a pressure increase by the pressing mold;
    Supplying the permeable gas and the condensable gas between the imprint material and the mold to perform the stamping;
    An imprint apparatus characterized by that.
  2. An imprint apparatus for forming a pattern on the substrate by performing a mold pressing on an imprint material on the substrate,
    A permeable gas that permeates at least one of the mold, the imprint material, and the substrate, and a condensable gas that is liquefied by a pressure increase due to the pressing die and that is different from a component gas of the imprint material are supplied. Supply means for
    Supplying the permeable gas and the condensable gas between the imprint material and the mold to perform the stamping;
    An imprint apparatus characterized by that.
  3. An imprint apparatus for forming a pattern on the substrate by performing a mold pressing on an imprint material on the substrate,
    A permeable gas that permeates at least one of the mold, the imprint material, and the substrate; and a condensable gas that includes at least one of a hydrofluorocarbon and a hydrofluoroether that are liquefied by a pressure increase due to the pressing die. Supply means for supplying
    Supplying the permeable gas and the condensable gas between the imprint material and the mold to perform the stamping;
    An imprint apparatus characterized by that.
  4.   The supply means includes a supply nozzle, and supplies the permeable gas and the condensable gas from the supply nozzle between the imprint material on the substrate and the mold. The imprint apparatus according to any one of claims 1 to 3.
  5.   The supply unit includes a mixing unit that mixes the permeable gas and the condensable gas, and supplies the mixed gas of the permeable gas and the condensable gas through the mixing unit. The imprint apparatus according to claim 1, wherein the imprint apparatus is any one of claims 1 to 4.
  6.   The imprint apparatus according to claim 5, further comprising an adjusting unit that adjusts a component ratio of the mixed gas.
  7. A detector for detecting a component of the mixed gas;
    The adjusting means adjusts the component ratio of the mixed gas based on the output of the detector.
    The imprint apparatus according to claim 6.
  8.   The imprint apparatus according to any one of claims 1 to 7, further comprising a recovery nozzle that recovers the permeable gas and the condensable gas.
  9.   The imprint apparatus according to any one of claims 1 to 8, wherein the permeable gas includes at least one of helium and hydrogen.
  10. Forming a pattern on a substrate using the imprint apparatus according to any one of claims 1 to 9,
    Processing the substrate on which the pattern is formed in the step;
    A method for producing an article comprising:
  11. A method of manufacturing an article including an imprint process in which a pattern is formed on the substrate by performing a pressing with a mold on an imprint material on the substrate,
    In the imprint process, the imprint material and the mold include a permeable gas that permeates at least one of the mold, the imprint material, and the substrate, and a condensable gas that is liquefied by a pressure increase caused by the pressing mold. To supply between and perform the stamping die,
    A method for manufacturing an article.
JP2014156831A 2014-07-31 2014-07-31 Imprint device, and article manufacturing method Pending JP2015005760A (en)

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JP2004103817A (en) * 2002-09-10 2004-04-02 National Institute Of Advanced Industrial & Technology Imprint method and device
JP2005136263A (en) * 2003-10-31 2005-05-26 Nikon Corp Aligner and gas supply method therefor
JP2006352121A (en) * 2005-06-13 2006-12-28 Asml Netherlands Bv Imprint lithography
JP2007509769A (en) * 2003-10-02 2007-04-19 ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム Single phase fluid imprint lithography
JP2007526820A (en) * 2003-12-19 2007-09-20 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒルThe University Of North Carolina At Chapel Hill Method for producing separated microstructure and separated nanostructure using soft lithography or imprint lithography
JP2009141190A (en) * 2007-12-07 2009-06-25 Nikon Corp Exposure apparatus, exposure method, and method of manufacturing device
JP2009266841A (en) * 2008-04-21 2009-11-12 Toshiba Corp Nano-imprint method
WO2009153925A1 (en) * 2008-06-17 2009-12-23 株式会社ニコン Nano-imprint method and apparatus
WO2010005032A1 (en) * 2008-07-09 2010-01-14 東洋合成工業株式会社 Pattern-forming method
JP2010076300A (en) * 2008-09-26 2010-04-08 Canon Inc Processing apparatus
WO2010047821A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of high-throughput nano-imprint lithography templates
WO2010063504A2 (en) * 2008-12-04 2010-06-10 Asml Netherlands B.V. Imprint lithography apparatus and method
JP2010149482A (en) * 2008-12-26 2010-07-08 Toshiba Corp Mold for inprint and pattern forming method
JP2010199496A (en) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp Fine-structure transfer apparatus and method

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004103817A (en) * 2002-09-10 2004-04-02 National Institute Of Advanced Industrial & Technology Imprint method and device
JP2007509769A (en) * 2003-10-02 2007-04-19 ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム Single phase fluid imprint lithography
JP2005136263A (en) * 2003-10-31 2005-05-26 Nikon Corp Aligner and gas supply method therefor
JP2007526820A (en) * 2003-12-19 2007-09-20 ザ ユニバーシティ オブ ノース カロライナ アット チャペル ヒルThe University Of North Carolina At Chapel Hill Method for producing separated microstructure and separated nanostructure using soft lithography or imprint lithography
JP2006352121A (en) * 2005-06-13 2006-12-28 Asml Netherlands Bv Imprint lithography
JP2009141190A (en) * 2007-12-07 2009-06-25 Nikon Corp Exposure apparatus, exposure method, and method of manufacturing device
JP2009266841A (en) * 2008-04-21 2009-11-12 Toshiba Corp Nano-imprint method
WO2009153925A1 (en) * 2008-06-17 2009-12-23 株式会社ニコン Nano-imprint method and apparatus
WO2010005032A1 (en) * 2008-07-09 2010-01-14 東洋合成工業株式会社 Pattern-forming method
JP2010076300A (en) * 2008-09-26 2010-04-08 Canon Inc Processing apparatus
WO2010047821A1 (en) * 2008-10-23 2010-04-29 Molecular Imprints, Inc. Fabrication of high-throughput nano-imprint lithography templates
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JP2010149482A (en) * 2008-12-26 2010-07-08 Toshiba Corp Mold for inprint and pattern forming method
JP2010199496A (en) * 2009-02-27 2010-09-09 Hitachi High-Technologies Corp Fine-structure transfer apparatus and method

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