JP2014529193A - Apparatus and method for coating a support wafer - Google Patents

Apparatus and method for coating a support wafer Download PDF

Info

Publication number
JP2014529193A
JP2014529193A JP2014531110A JP2014531110A JP2014529193A JP 2014529193 A JP2014529193 A JP 2014529193A JP 2014531110 A JP2014531110 A JP 2014531110A JP 2014531110 A JP2014531110 A JP 2014531110A JP 2014529193 A JP2014529193 A JP 2014529193A
Authority
JP
Japan
Prior art keywords
coating
coating material
support wafer
inner circular
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2014531110A
Other languages
Japanese (ja)
Other versions
JP5933724B2 (en
Inventor
ブルクグラーフ ユルゲン
ブルクグラーフ ユルゲン
Original Assignee
エーファウ・グループ・エー・タルナー・ゲーエムベーハー
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by エーファウ・グループ・エー・タルナー・ゲーエムベーハー filed Critical エーファウ・グループ・エー・タルナー・ゲーエムベーハー
Publication of JP2014529193A publication Critical patent/JP2014529193A/en
Application granted granted Critical
Publication of JP5933724B2 publication Critical patent/JP5933724B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/6715Apparatus for applying a liquid, a resin, an ink or the like

Abstract

支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する装置であって、以下の特徴、即ち、前記内側円形面(7i)に、該内側円形面(7i)を被覆するために設けられる被覆材料(9)を塗布する塗布手段(5)と、回転軸線(R)を中心として前記支持ウェハ(3)を支持し、回転させ、前記被覆面(3b)上に前記被覆材料を分散させる回転手段(2,6)とを有している、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する装置において、前記内側円形面(7i)を取り囲む外側円環面(7a)に、前記被覆材料(9)の分散中における前記外側円環面(7a)の被覆を少なくとも抑制する被覆抑制剤を供給する第2の塗布手段(4)が設けられていることを特徴とする、支持ウェハ(3)を被覆する装置、並びにこれに対応する方法。An apparatus for coating an inner circular surface (7i) of a coated surface (3b) of a support wafer (3) with a coating material (9), the inner circular surface (7i) having the inner circular surface An application means (5) for applying a coating material (9) provided to coat the surface (7i), and the support wafer (3) is supported and rotated about the rotation axis (R), and the coated surface The inner circular surface (7i) of the coating surface (3b) of the support wafer (3) having rotating means (2, 6) for dispersing the coating material on (3b) is coated with the coating material (9). In a coating apparatus, a coating inhibitor that suppresses at least coating of the outer annular surface (7a) during dispersion of the coating material (9) on the outer annular surface (7a) surrounding the inner circular surface (7i). Characterized in that second application means (4) is provided for supplying That a device for coating the support wafer (3), as well as a corresponding method.

Description

本発明は、請求項1及び9に記載の形式の支持ウェハ(キャリアウェハ)の被覆面の内側円形面を被覆材料で被覆する装置及び方法に関する。   The invention relates to an apparatus and a method for coating an inner circular surface of a coated surface of a support wafer (carrier wafer) of the type of claims 1 and 9 with a coating material.

半導体技術においては、ますます薄くかつ大面積になる構造ウェハを最良に取り扱うことができるように、テンポラリーボンディング(仮ウェハ接合)のための方法がますます重要になっている。構造ウェハの取り扱いは先行技術では特に、構造ウェハの一部のみを、特に周縁部を支持ウェハにテンポラリーボンディングすることにより改善されている。これにより、構造ウェハの構造化された面に接着剤が与えられることをできるだけ阻止している。このことは先行技術では、支持ウェハの被覆面の縁部区域だけを接着するように形成することによって行っている。特にこの場合、ウェハの内側円形面に、接着力を減じる被覆材料を被覆している。接着力のない被覆材料は、これに限定するものではないが好適には、例えば3M社のEasy Clean Coat1000のような抗付着層材料(ASL)である。   In semiconductor technology, methods for temporary bonding (temporary wafer bonding) are becoming increasingly important so that structural wafers that are increasingly thinner and larger in area can be best handled. The handling of structural wafers is improved in the prior art, in particular by temporarily bonding only a part of the structural wafer, in particular the peripheral edge, to the support wafer. This prevents the adhesive from being applied to the structured surface of the structural wafer as much as possible. This is done in the prior art by forming only the edge area of the coated surface of the support wafer. Particularly in this case, the inner circular surface of the wafer is coated with a coating material that reduces the adhesive force. The non-adhesive coating material is preferably, but not limited to, an anti-adhesion layer material (ASL) such as Easy Clean Coat 1000 from 3M.

先行技術は製造のために今のところ、以下のようなステップを有している。まず、支持ウェハの縁部区域Bをラッカ、例えばフォトレジストで被覆する。フォトレジストを炉内又は加熱プレート上で硬化させる。次いでASLを全面的に塗布する。ASL材料は、フォトレジストによって被覆された支持ウェハの表面には達しない。フォトレジストで被覆されていない支持ウェハの中央領域に分子層が形成されるまでの所定の作用時間後に、残りのASL材料を振り飛ばす。次いでフォトレジストを例えばアセトンによって除去する。この時点で、ASL被覆を有さない縁部区域と、ASL被覆されたコア区域との2つの区域から成る支持ウェハが生じる。その後、接着剤を支持ウェハ全体に塗布する。接着剤は、ASL材料によって被覆されていない縁部区域に極めて良好に付着する。ASL材料が被覆されたコア区域における接着剤の付着強度は極めて弱い。コア区域では接着剤は、後で支持ウェハにボンディングされる構造ウェハの構造を支える働きを主に持つ。先行技術により、2つの区域を製造するためには複数のステップが必要であることがはっきりと判る。第1にフォトレジストの塗布、第2にフォトレジストの硬化、第3にASL材料の塗布、第4にフォトレジストの除去、第5に接着剤の塗布である。   The prior art currently has the following steps for manufacturing: First, the edge area B of the support wafer is coated with a lacquer, for example a photoresist. The photoresist is cured in an oven or on a heating plate. Next, ASL is applied over the entire surface. The ASL material does not reach the surface of the support wafer that is coated with the photoresist. The remaining ASL material is shaken off after a predetermined working time until a molecular layer is formed in the central region of the support wafer that is not coated with photoresist. The photoresist is then removed, for example with acetone. At this point, a support wafer is created that consists of two areas: an edge area without ASL coating and an ASL coated core area. Thereafter, an adhesive is applied to the entire support wafer. The adhesive adheres very well to the edge area not covered by the ASL material. The adhesive strength of the adhesive in the core area coated with ASL material is very weak. In the core area, the adhesive mainly serves to support the structure of the structural wafer that is subsequently bonded to the support wafer. The prior art clearly shows that multiple steps are required to produce the two zones. The first is the application of photoresist, the second is the curing of the photoresist, the third is the application of ASL material, the fourth is the removal of the photoresist, and the fifth is the application of adhesive.

支持ウェハへの被覆材料及び接着剤の塗布はこの場合、できるだけ安価かつ迅速に、しかしながら同時に高品質に、即ち特にできるだけ均一な層厚さとなるように行われるのが望ましい。   In this case, the application of the coating material and the adhesive to the support wafer is preferably carried out as cheaply and as quickly as possible, but at the same time with high quality, in particular with a layer thickness as uniform as possible.

そこで本発明の課題は、塗布を迅速かつ安価であると同時にしかも高品質で行うことができるように、支持ウェハを被覆する装置及び方法を改良することである。   Therefore, an object of the present invention is to improve an apparatus and a method for coating a supporting wafer so that coating can be performed quickly and inexpensively and at the same time with high quality.

この課題は、請求項1及び9の特徴部に記載の構成により解決される。本発明の有利な別の構成は従属請求項に記載されている。明細書、請求の範囲及び/又は図面に記載された少なくとも2つの特徴から成る全ての組み合わせも本発明の範疇にあるものである。規定された値範囲では、記載した範囲内にある値も、制限値として開示されたとみなすべきであって、任意の組み合わせで請求の範囲とすることができる。   This problem is solved by the configuration described in the characterizing portions of claims 1 and 9. Advantageous further configurations of the invention are described in the dependent claims. All combinations of at least two features described in the specification, claims and / or drawings are within the scope of the present invention. In the defined value range, values within the stated range should also be considered disclosed as limiting values and can be claimed in any combination.

本発明の根底を成す思想は、支持ウェハへの被覆材料の被覆を、支持ウェハの被覆面の種々異なる区域において、(特に、内側円形面と、該内側円形面の周りの、好適には該内側円形面を取り囲む外側円環面とから成る)区域における、被覆が行われるべきではない被覆面(外側円環面)の被覆材料による被覆の抑制、好適には阻止と、少なくともほぼ同時に行うことにある。被覆材料は特に、構造ウェハ又は塗布される接着剤の支持ウェハへの付着を、支持ウェハの被覆面上の被覆材料が塗布された領域ではできるだけ阻止する抗付着材料であって良い。支持ウェハの被覆面は主として、構造ウェハの構造面の支持が行われる支持ウェハの面側であり、特に全面的に、好適にはほぼ同じ面及び面輪郭を有している。構造ウェハは、2つの構造面を有したウェハであっても良い。被覆材料の塗布は好適には支持ウェハに対して同心的に行われるので、被覆材料は好適には、支持ウェハの回転中に塗布され、支持ウェハの回転により支持ウェハ上に均一かつ均質に分散される。構造ウェハの被覆すべきではない領域に、即ち特に接着領域に、被覆材料を溶かす溶剤をほぼ同時に塗布することにより、この領域における被覆面の被覆材料による被覆は少なくともほぼ、特に完全に阻止される。縁部区域(特に外側円環面)の被覆は、被覆材料を縁部で溶剤を介して外方に動かすことによっても阻止することもできる。別の構成では、被覆材料を外方に動かすことができるものは必ずしも溶剤である必要はなく任意の液体であって良い。この上記手段は、これが塗布された領域(外側円環面)において被覆を抑制する、又は特に完全に阻止する。従ってここではそれは被覆抑制剤と言われる。   The idea underlying the present invention is that the coating of the coating material on the support wafer is carried out in different areas of the coating surface of the support wafer (especially the inner circular surface and around the inner circular surface, preferably the Suppressing, preferably blocking, at least approximately simultaneously with the covering material of the covering surface (outer annular surface) that should not be coated in the area (consisting of the outer circular surface surrounding the inner circular surface) It is in. The coating material may in particular be an anti-adhesion material that prevents the adhesion of the structural wafer or applied adhesive to the support wafer as much as possible in the area where the coating material is applied on the coated surface of the support wafer. The covering surface of the supporting wafer is mainly the surface side of the supporting wafer on which the structural surface of the structural wafer is supported, and in particular, has the same surface and surface contour, preferably over the entire surface. The structural wafer may be a wafer having two structural surfaces. Since the coating material is preferably applied concentrically to the support wafer, the coating material is preferably applied during the rotation of the support wafer and evenly and uniformly distributed on the support wafer by the rotation of the support wafer. Is done. By applying almost simultaneously the solvent which dissolves the coating material on the uncovered area of the structural wafer, in particular on the bonding area, the coating of the coated surface in this area is at least almost completely blocked, in particular completely. . Covering the edge area (especially the outer toric surface) can also be prevented by moving the coating material outwardly through the solvent at the edge. In another configuration, what can move the coating material outward does not necessarily have to be a solvent, but can be any liquid. This means suppresses or in particular completely prevents the coating in the area (outer annular surface) where it is applied. Therefore, it is referred to herein as a coating inhibitor.

被覆面の被覆すべき領域における被覆材料の硬化後、及び、特に支持ウェハの回転又は気化による被覆抑制剤の除去後、部分的にのみ被覆された被覆面を有する支持ウェハが得られ、これは本発明の継続的かつ1段階のプロセスで製造可能なものである。次いで、被覆されていない領域で、特に、溶剤を塗布する第2の塗布手段によって、被覆面の被覆されていない領域に接着剤を塗布し、分散させることができる。接着剤は、先行技術により公知であるように、全面的に、基板全体にわたって塗布することができ、この場合接着剤は、付着強度が低い領域及び付着強度が高い領域に同様に被覆される。従って本発明によれば、構造ウェハを支持するための、複数の区域を有する被覆面を備えた支持ウェハを、本発明による2段階の製造法で製造することができる。被覆抑制剤及び被覆材料は好適には同時に塗布される。作動シーケンスでは、溶剤は好適には遅くとも被覆材料が到達するまでに、さらに好適には被覆材料と同時に、極めて好適には被覆材料より前に塗布される。停止シーケンスでは、被覆材料による被覆は溶剤による被覆の前に終了される。   After curing of the coating material in the area to be coated of the coated surface, and in particular after removal of the coating inhibitor by rotation or vaporization of the supporting wafer, a support wafer having a partially coated coated surface is obtained, which It can be manufactured in a continuous and one-step process of the present invention. Then, the adhesive can be applied and dispersed in the uncoated region, in particular, in the uncoated region of the coated surface by the second coating means for applying a solvent. The adhesive can be applied over the entire substrate, as is known from the prior art, in which case the adhesive is similarly applied to areas with low and high adhesion strength. Therefore, according to the present invention, a support wafer having a coated surface having a plurality of areas for supporting a structural wafer can be manufactured by the two-stage manufacturing method according to the present invention. The coating inhibitor and the coating material are preferably applied simultaneously. In the operating sequence, the solvent is preferably applied at the latest by the arrival of the coating material, more preferably simultaneously with the coating material, very preferably before the coating material. In the stop sequence, the coating with the coating material is terminated before the coating with the solvent.

好適には、溶剤と被覆材料とが混合することは殆どない。境界層では被覆材料は溶剤によって最も迅速に気化される。被覆材料と被覆抑制剤、特に溶剤との混合は、本発明によれば僅かであるので、被覆すべきではない区域に被覆材料が被覆されることはない。中央領域(特に内側円形面)の被覆が効果的に行われた後、任意の測定法により、好適には接触角測定装置により、この条件が後からチェックされる。好適には、被覆されるべきではない領域の接触角は、本発明のプロセスによれば、最大15°、好適には最大10°、さらに好適には最大5°、最も好適には0°変化した。   Preferably, the solvent and the coating material are rarely mixed. In the boundary layer, the coating material is most rapidly vaporized by the solvent. Since the mixing of the coating material with the coating inhibitor, in particular the solvent, is small according to the invention, the coating material is not coated in areas that should not be coated. After the central area (especially the inner circular surface) has been effectively coated, this condition is checked later by any measuring method, preferably by a contact angle measuring device. Preferably, the contact angle of the region that should not be coated varies by up to 15 °, preferably up to 10 °, more preferably up to 5 °, most preferably 0 ° according to the process of the invention. did.

これまで行われていた別個のプロセスステップによりウェハの縁部における材料を除去することは、本発明によれば、被覆と特に同時に行われる縁部洗浄の1つのプロセスに変換され、これにより被覆材料による被覆を抑制、又は好適には完全に阻止することができる。特に全面的な接着剤の塗布は必ずしも本発明による方法及び装置の構成要素ではないが、本発明による方法及び装置の構成要素に入れることができる。   The removal of material at the edge of the wafer by a separate process step that has been performed so far is converted according to the invention into one process of edge cleaning, which is performed at the same time as the coating, whereby the coating material Can be suppressed, or preferably completely prevented. In particular, the entire adhesive application is not necessarily a component of the method and apparatus according to the invention, but can be included in the method and apparatus components of the invention.

好適な構成によれば、第1の塗布手段は、前記被覆材料の塗布が回転の回転軸線の領域で、特に前記支持ウェハに対して同心的に行われるように、配置されている又は配置可能である。これにより、被覆材料の分散は特に一定の回転速度で被覆面に沿って極めて均質に行われるので、被覆面全体において被覆材料の均質な分散が得られる。支持ウェハの回転は、支持ウェハを回転可能な支持部、特にチャックで支持し、位置固定することにより行われる。この場合、支持ウェハの支持及び位置固定は、支持装置の回転軸線に対してできるだけ正確に同心的となるように位置合わせされて行われる。   According to a preferred configuration, the first application means is arranged or arranged so that the application of the coating material takes place concentrically in the region of the axis of rotation of rotation, in particular with respect to the support wafer. It is. Thereby, the dispersion of the coating material is carried out very homogeneously along the coating surface, in particular at a constant rotational speed, so that a homogeneous distribution of the coating material is obtained over the entire coating surface. The support wafer is rotated by supporting the support wafer with a rotatable support portion, particularly a chuck, and fixing the position. In this case, support and position fixing of the support wafer are performed while being aligned so as to be concentric as accurately as possible with respect to the rotation axis of the support device.

第2の塗布手段が、被覆抑制剤の塗布が外側円環面の少なくとも周区分で、外側円環面の半径方向内側に位置する縁部の領域で行われるように配置されている又は配置可能であることにより、この場合も、支持ウェハの回転による被覆抑制剤の分散の原理が利用可能であるので、本発明によれば少なくともほぼ同時に、被覆抑制剤と被覆材料とを塗布することができる。これらは被覆面における塗布個所だけが互いに異なっており、この場合、支持ウェハへの溶剤の塗布は、被覆材料の塗布よりも回転軸線Rから離されて行われる。   The second application means is arranged or can be arranged such that the coating inhibitor is applied at least in the circumferential section of the outer annular surface and in the region of the edge located radially inward of the outer annular surface. Thus, in this case as well, the principle of dispersion of the coating inhibitor by the rotation of the support wafer can be used, and according to the present invention, the coating inhibitor and the coating material can be applied at least almost simultaneously. . These are different from each other only at the application point on the coated surface. In this case, the solvent is applied to the support wafer away from the rotation axis R rather than the coating material.

この場合、第1の塗布手段及び/又は第2の塗布手段の塗布量及び/又は塗布圧及び/又は塗布速度及び/又は塗布角度及び/又は塗布時点及び/又は塗布位置を制御する本発明による制御手段が設けられているならば好適である。上記パラメータが調節可能であるように形成されているならば、本発明による装置及び本発明による方法を、被覆材料及び対応する被覆抑制剤の種々様々な組み合わせに合わせて調整することができる。被覆抑制剤が大量に供給される場合、一方では被覆材料は効果的に剥離若しくは溶解され、若しくは、被覆材料は被覆抑制剤によりより強力に、外側の縁部区域を覆う若しくは被覆するのを防止されるが、他方ではより多くの被覆抑制剤が消費される。塗布圧又は塗布速度の上昇若しくは適切な塗布角度の選択により、被覆抑制剤及び被覆材料の放出は、特に塗布量を増大させることなく最良にすることができる。   In this case, according to the present invention for controlling the application amount and / or application pressure and / or application speed and / or application angle and / or application time and / or application position of the first application means and / or the second application means. It is preferable if a control means is provided. If the above parameters are configured to be adjustable, the device according to the invention and the method according to the invention can be adjusted for different combinations of coating materials and corresponding coating inhibitors. When coating inhibitors are supplied in large quantities, on the one hand, the coating material is effectively peeled off or dissolved, or the coating material is more strongly prevented by the coating inhibitor from covering or covering the outer edge area. On the other hand, more coating inhibitor is consumed. By increasing the application pressure or application speed or selecting an appropriate application angle, the release of the coating inhibitor and the coating material can be optimized without particularly increasing the application amount.

被覆材料を硬化させる硬化手段が設けられているならば、被覆材料の硬化を特に被覆面への被覆材料の分散と同時に行うことができるので、本発明による1段階の又は2段階のプロセスをさらに良好にすることができる。ASL材料に関連して、硬化中に単分子層若しくは多分子層が形成されることが理解される。本発明による構成では、このような層は、表面における分離効果により形成される。さらに「硬化」とは、以下のテキストでは、接着性のない層の形成であると理解されたい。   If a curing means for curing the coating material is provided, the coating material can be cured in particular simultaneously with the dispersion of the coating material on the coating surface, so that the one-stage or two-stage process according to the invention is further improved. Can be good. It is understood that in connection with ASL materials, monolayers or multi-layers are formed during curing. In the arrangement according to the invention, such a layer is formed by a separation effect on the surface. Furthermore, “curing” is to be understood in the following text as the formation of a non-adhesive layer.

本発明の別の好適な構成によれば、第2の塗布手段は、出口端部が前記外側円環面に向けられて配置可能な少なくとも1つの管路を有している。従って、被覆材料の分散の際に被覆材料が特別に溶解されるべき、又は一般的に分離されるべき被覆面の領域、ひいてはそこでは硬化されない(上記「硬化」参照)領域に、被覆抑制剤を方向付けて噴射し、所望のように塗布することができる。   According to another preferred configuration of the invention, the second application means has at least one conduit that can be arranged with the outlet end facing the outer annular surface. Accordingly, the coating inhibitor is applied to the areas of the coated surface where the coating material is to be specially dissolved or generally separated during dispersion of the coating material, and thus is not cured there (see “curing” above). Can be sprayed and applied as desired.

この場合、第2の塗布手段は、特に各出口端部に、特に制御可能なノズルを有しているならば特に好適である。内側ノズルは典型的には0.125インチの開口直径を有しており、外側ノズルは典型的には0.25インチの開口直径を有している。より小さな又は大きな開口直径を有するノズルも考えられる。開口直径は、0.001インチよりも大きく、好適には0.01インチよりも大きく、さらに好適には0.1インチよりも大きく、特に1インチよりも小さい。このような手段により、本発明による装置は、種々様々な被覆材料・溶剤組み合わせに合わせて調整可能であるだけでなく、種々異なるサイズの支持ウェハ又は抗付着区域に対する接着区域の大きさの所望の比についても調整可能である。   In this case, the second application means is particularly suitable if it has a controllable nozzle, particularly at each outlet end. The inner nozzle typically has an opening diameter of 0.125 inches, and the outer nozzle typically has an opening diameter of 0.25 inches. Nozzles with smaller or larger opening diameters are also conceivable. The opening diameter is greater than 0.001 inch, preferably greater than 0.01 inch, more preferably greater than 0.1 inch, especially less than 1 inch. By such means, the device according to the invention is not only adjustable for a wide variety of coating materials / solvent combinations, but also for the desired size of the adhesion area for different sizes of support wafers or anti-adhesion areas. The ratio can also be adjusted.

装置に関して開示された特徴が、方法的特徴を含む場合は、これは方法的にも開示されているとみなされるべきであり、逆のことも同様である。   If a feature disclosed for a device includes a method feature, this should be considered method disclosed as well, and vice versa.

図面には本発明によるさらなる利点、特徴、実施の形態が開示されている。   The drawings disclose further advantages, features and embodiments of the present invention.

被覆材料塗布前の本発明による装置の実施例を示した斜視図である。It is the perspective view which showed the Example of the apparatus by this invention before coating | coated material application. 本発明による2段階プロセス実行後の図1の実施の形態を示した図である。FIG. 2 shows the embodiment of FIG. 1 after execution of a two-stage process according to the present invention.

図面において同じ又は同じ機能を有する構成部分には同じ符号を付与する。   In the drawings, the same reference numerals are given to components having the same or the same function.

支持ウェハ3の被覆面3bの内側円形面7iを被覆材料9で被覆する本発明による装置の図示した構成は、図面においては概略的にしか示されておらず、本発明の説明のために主要な構成部分に限定している。従って、図面には例えば、図示した構成部分を保持するフレームや以下に記載する本発明による構成部分を制御する本発明による制御装置は示されていない。   The illustrated arrangement of the device according to the invention for coating the inner circular surface 7i of the coated surface 3b of the support wafer 3 with a coating material 9 is only schematically shown in the drawings and is mainly used for the explanation of the invention. It is limited to various components. Accordingly, the drawings do not show, for example, a frame for holding the illustrated components or a control device according to the present invention for controlling the components according to the present invention described below.

支持ウェハ3は、支持ウェハ3が回転軸線Rに対してアライメントされた後で、支持体2(例えばチャック)上に、被覆面3bとは反対側の下面3uで支持され位置固定される。回転軸線Rは、本発明によれば支持ウェハ3の中心点(回転対称中心)に位置している。回転は、(制御装置によって制御されながら)図示していない駆動手段によって駆動される回転軸6により行われる。支持体2と回転軸6と制御装置とは一緒に本発明による回転手段を形成する。被覆面3bの上方には、管路5lの形の第1の塗布手段5が配置されている又は配置可能である。この場合、第1の塗布手段5は回転軸線Rに対して位置固定されて又は位置固定可能に配置されている。図示の構成では、管路5lの出口端部5eはノズル5dを有していて、支持ウェハ3の中心点(回転軸線と被覆面3bとの交点)の方向に向けられている。   After the support wafer 3 is aligned with respect to the rotation axis R, the support wafer 3 is supported and fixed on the support 2 (for example, a chuck) by the lower surface 3u opposite to the coating surface 3b. According to the present invention, the rotation axis R is located at the center point (rotation symmetry center) of the support wafer 3. The rotation is performed by a rotating shaft 6 driven by driving means (not shown) (while being controlled by the control device). The support 2, the rotary shaft 6 and the control device together form the rotating means according to the invention. Above the covering surface 3b, a first application means 5 in the form of a pipe 5l is or can be arranged. In this case, the position of the first application means 5 is fixed with respect to the rotation axis R or arranged so that the position can be fixed. In the illustrated configuration, the outlet end portion 5e of the pipe line 5l has a nozzle 5d and is directed in the direction of the center point of the support wafer 3 (intersection of the rotation axis and the covering surface 3b).

管路5lは、被覆材料9用の貯え容器(図示せず)に接続されていて、貯え容器からノズル5dへの被覆材料9の供給及び被覆面3bへの塗布は、制御装置によって制御されるポンプ(図示せず)を介して行われる。上記特徴が第1の塗布手段5を形成している。被覆材料9はポンプによって付与する必要はなく、高いところにある容器から、重力作用によってのみ付与することができる。さらに、高圧又は高速で液体を付与することが考えられる。当業者には、被覆材料を塗布することだけが重要であることが明らかである。   The pipe 5l is connected to a storage container (not shown) for the coating material 9, and the supply of the coating material 9 from the storage container to the nozzle 5d and the application to the coating surface 3b are controlled by a control device. This is done via a pump (not shown). The above features form the first application means 5. The coating material 9 does not need to be applied by a pump, but can be applied only by gravity action from a high container. Furthermore, it is conceivable to apply the liquid at high pressure or high speed. It is clear to the person skilled in the art that it is only important to apply the coating material.

第1の塗布手段5により、被覆材料9が内側円形面7iに、特に回転軸線Rと内側円形面7iの交点(支持ウェハ3の中心点)に塗布され、特に、回転軸線Rを中心とした回転手段の回転により加速されながら、内側円形面7i上に分散される。   The coating material 9 is applied to the inner circular surface 7 i by the first application means 5, particularly at the intersection of the rotation axis R and the inner circular surface 7 i (the center point of the support wafer 3), and particularly with the rotation axis R as the center. It is dispersed on the inner circular surface 7i while being accelerated by the rotation of the rotating means.

回転及び回転により被覆面3bに生じる遠心力により、被覆材料9が、支持ウェハ3の中心点から半径方向かつ同心的に外側に送られて、内側円形面7iを離れて外側円環面7aにまで入ることは容易に想像がつく。被覆材料9による被覆面3bの摩擦により、被覆材料9は、回転手段の回転方向でも加速されて、これにより被覆材料9は円弧状の軌道に沿って、支持ウェハ3の中心点から周縁部7eへと加速される。さらなる回転により、被覆材料9はさらにほぼ半径方向外側に向かって周縁部7eへと送られ、ここで被覆材料9は支持ウェハ3を離れ、捕集装置(図示せず)に捕集される。   The coating material 9 is sent radially and concentrically from the center point of the support wafer 3 by the centrifugal force generated on the coating surface 3b by the rotation and rotation, and leaves the inner circular surface 7i to the outer annular surface 7a. It's easy to imagine going up. Due to the friction of the coating surface 3 b by the coating material 9, the coating material 9 is also accelerated in the rotation direction of the rotating means, whereby the coating material 9 follows the arcuate path from the center point of the support wafer 3 to the peripheral portion 7 e. It is accelerated to. By further rotation, the coating material 9 is further sent radially outward to the peripheral edge 7e, where the coating material 9 leaves the support wafer 3 and is collected by a collection device (not shown).

被覆面3bに沿って被覆材料9が動いている間に、被覆材料9は硬化手段によって硬化され(上述した硬化)、これにより、さらなる措置なしに、被覆面3b全体において被覆材料9の均一な層が生じる。   While the coating material 9 is moving along the coating surface 3b, the coating material 9 is cured by the curing means (curing as described above), so that the coating material 9 is uniformly distributed over the entire coating surface 3b without further measures. A layer is produced.

被覆材料9を溶かすことができる、被覆抑制剤としての溶剤を、内側円形面7iを取り囲む外側円環面7aに供給するための第2の塗布手段4は図示の実施例では、支持ウェハ3の上側に配置されている若しくは配置可能である。好適には、塗布手段若しくは、第2の塗布手段4の被覆面3bへの供給場所は、アライメント手段によって調節可能であり、特に、被覆面3bに対して平行に塗布手段4を調節することにより調節可能である。   In the illustrated embodiment, the second coating means 4 for supplying a solvent as a coating inhibitor capable of dissolving the coating material 9 to the outer annular surface 7a surrounding the inner circular surface 7i is provided on the support wafer 3 in the illustrated embodiment. It is arranged on the upper side or can be arranged. Preferably, the place of supply to the coating surface 3b of the coating means or the second coating means 4 can be adjusted by the alignment means, in particular by adjusting the coating means 4 parallel to the coating surface 3b. It is adjustable.

第2の塗布手段4による塗布は、第1の塗布手段5による塗布よりも、支持ウェハ3の中心点からさらに離れて行われる。   The application by the second application unit 4 is performed further away from the center point of the support wafer 3 than the application by the first application unit 5.

第2の塗布手段4の構成は、第1の塗布手段5と同様であって良く、特に管路4lと、出口端部4eと、ノズル4dと、溶剤のための貯え容器(図示せず)と、(制御装置によって制御される)ポンプとを有している。   The configuration of the second application means 4 may be the same as that of the first application means 5, and in particular, the conduit 41, the outlet end 4e, the nozzle 4d, and a storage container for the solvent (not shown). And a pump (controlled by the controller).

第2の塗布手段4による溶剤の塗布は、周区分7uの領域で行われ、これにより図示の実施例では、全周における1つの個所だけで溶剤の塗布が行われる。回転手段による支持ウェハ3の回転により初めて、支持ウェハ3が1回転した後に外側円環面7aに完全に溶剤が供給される。   The application of the solvent by the second application means 4 is performed in the area of the circumferential section 7u, and in the illustrated embodiment, the solvent is applied only at one location on the entire circumference. For the first time by the rotation of the support wafer 3 by the rotating means, the solvent is completely supplied to the outer annular surface 7a after the support wafer 3 makes one rotation.

第2の塗布手段4は、溶剤が、外側円環面7aの内側に位置する縁部7rに、即ち支持ウェハ3の中心点に向かって塗布されるように配置されている。ここから、被覆剤9と同様に、半径方向外側に向かって回転方向で加速され、これにより、外側円環面7a全体に継続的に溶剤が供給され、この溶剤により被覆材料9は溶かされ、かつ/又は外側円環面7a上の被覆材料9が硬化するのが防止され、かつ/又は、被覆材料9が被覆抑制剤を越えて振り飛ばされるようにすることにより、被覆材料9が被覆面3bから分離される。   The second application unit 4 is arranged so that the solvent is applied to the edge 7 r located inside the outer annular surface 7 a, that is, toward the center point of the support wafer 3. From here, similarly to the coating agent 9, it is accelerated in the rotational direction toward the radially outer side, whereby the solvent is continuously supplied to the entire outer annular surface 7a, and the coating material 9 is dissolved by this solvent, And / or by preventing the coating material 9 on the outer annular surface 7a from curing and / or allowing the coating material 9 to be swung over the coating inhibitor. Separated from 3b.

従って、第1の塗布手段5により被覆材料9を所定量塗布した後、内側円形面7i上には被覆材料9の硬化した部分が均一な抗付着層として残るが、外側円環面7aにおいては被覆材料9の硬化は、溶剤によって阻止又は少なくとも抑制される。   Therefore, after a predetermined amount of the coating material 9 is applied by the first application means 5, the hardened portion of the coating material 9 remains as a uniform anti-adhesion layer on the inner circular surface 7i, but the outer annular surface 7a Curing of the coating material 9 is prevented or at least suppressed by the solvent.

従って、被覆材料9と被覆抑制剤の同時的な塗布により一段階のプロセスで、内側円形面7iにのみ被覆材料9(抗付着層)が被覆された支持ウェハ3が生じる。   Accordingly, the support wafer 3 in which the coating material 9 (anti-adhesion layer) is coated only on the inner circular surface 7i is produced in a one-step process by the simultaneous application of the coating material 9 and the coating inhibitor.

特に本発明の装置では、第2ステップで、接着層を外側円環面7aに、特に被覆面3b全体に(即ち、内側円形面7iにおける被覆材料9上にも)塗布することができる。このために、第1の塗布手段5及び/又は第2の塗布手段4又は別個の第3の塗布手段(図示せず)を使用することができる。   Particularly in the device according to the invention, in the second step, the adhesive layer can be applied to the outer annular surface 7a, in particular to the entire coated surface 3b (ie also on the coating material 9 on the inner circular surface 7i). For this purpose, the first application means 5 and / or the second application means 4 or a separate third application means (not shown) can be used.

さらに、被覆後に支持ウェハ3をクリーニングするために、本発明によれば第4の塗布手段4を設けることができる。   Furthermore, in order to clean the support wafer 3 after coating, a fourth application means 4 can be provided according to the present invention.

内側円形面7iの半径Xは被覆抑制剤の塗布個所と、被覆面3b上の回転軸線Rとの間の間隔によって規定される。これにより自動的に外側円環面7aのリング幅Bも規定される。リング幅Bは、10mmよりも、好適には5mmよりも、さらに好適には2mmよりも、最も好適には1mmよりも小さい。ノズル4dの形状により、溶剤の塗布は方向付けられた噴流として、特にフラットジェットとして行うことができ、これにより内側に位置する縁部7rはできるだけ明確に画成され、支持ウェハ3に対して同心的に延在している。   The radius X of the inner circular surface 7i is defined by the distance between the coating inhibitor application site and the rotation axis R on the coating surface 3b. Thereby, the ring width B of the outer annular surface 7a is also automatically defined. The ring width B is less than 10 mm, preferably less than 5 mm, more preferably less than 2 mm, and most preferably less than 1 mm. Due to the shape of the nozzle 4d, the application of the solvent can be carried out as a directed jet, in particular as a flat jet, whereby the inner edge 7r is defined as clearly as possible and is concentric with the support wafer 3. Extended.

本発明の好適な構成では、周囲に分配された複数の管路4lを、複数の周区分7uに溶剤を塗布するために設けることができる。好適な構成では、塗布角度(図示の実施例では、回転軸線Rに対して平行)は、ノズル4dが、外側に向かって傾斜するように傾けられて配置されている。このような措置により、被覆抑制剤が内側円形面7i上へ入ることが阻止される。   In a preferred configuration of the invention, a plurality of pipe lines 4l distributed around can be provided for applying the solvent to the plurality of circumferential sections 7u. In a preferred configuration, the application angle (in the illustrated embodiment, parallel to the rotation axis R) is arranged so that the nozzle 4d is inclined toward the outside. Such a measure prevents the coating inhibitor from entering the inner circular surface 7i.

2 支持体
3 支持ウェハ
3b 被覆面
3u 下面
4 第2の塗布手段
4l 管路
4d ノズル
4e 出口端部
5 第1の塗布手段
5l 管路
5d ノズル
5e 出口端部
6 回転軸
7a 外側円環面
7i 内側円形面
7e 周縁部
7r 内側に位置する縁部
7u 周区分
8 接着剤
9 被覆材料
R 回転軸線
X 半径
B リング幅
DESCRIPTION OF SYMBOLS 2 Support body 3 Support wafer 3b Cover surface 3u Lower surface 4 2nd application means 4l Pipe line 4d Nozzle 4e Outlet end part 5 1st application means 5l Pipe line 5d Nozzle 5e Outlet end part 6 Rotating shaft 7a Outer ring surface 7i Inner circular surface 7e Peripheral part 7r Edge located on the inner side 7u Peripheral section 8 Adhesive 9 Coating material R Rotating axis X Radius B Ring width

Claims (11)

支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する装置であって、
前記内側円形面(7i)に、該内側円形面(7i)を被覆すべき被覆材料(9)を塗布する塗布手段(5)と、
回転軸線(R)を中心として前記支持ウェハ(3)を支持し、回転させ、前記被覆面(3b)上に前記被覆材料を分散させる回転手段(2,6)とを有する装置において、
前記内側円形面(7i)を取り囲む外側円環面(7a)に、前記被覆材料(9)の分散中における前記外側円環面(7a)の被覆を少なくとも抑制する被覆抑制剤を供給する第2の塗布手段(4)が設けられていることを特徴とする、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する装置。
An apparatus for coating the inner circular surface (7i) of the coated surface (3b) of the support wafer (3) with a coating material (9),
Coating means (5) for applying a coating material (9) to be coated on the inner circular surface (7i) to the inner circular surface (7i);
In an apparatus having rotating means (2, 6) for supporting and rotating the support wafer (3) about a rotation axis (R) and rotating the support wafer (3) on the coating surface (3b).
A second coating inhibitor that suppresses at least the coating of the outer annular surface (7a) during the dispersion of the coating material (9) is supplied to the outer annular surface (7a) surrounding the inner circular surface (7i). A device for coating the inner circular surface (7i) of the coating surface (3b) of the support wafer (3) with the coating material (9), characterized in that the coating means (4) is provided.
前記被覆抑制剤は、前記被覆材料(9)を溶解可能な溶剤である、請求項1記載の装置。   The device according to claim 1, wherein the coating inhibitor is a solvent capable of dissolving the coating material (9). 前記第1の塗布手段(5)は、前記被覆材料(9)の塗布が回転の回転軸線(R)の領域で、特に前記支持ウェハ(3)に対して同心的に行われるように、配置されている又は配置可能である、請求項1又は2記載の装置。   The first application means (5) is arranged so that the application of the coating material (9) is performed concentrically in the region of the rotational axis (R) of rotation, in particular with respect to the support wafer (3). The device according to claim 1, wherein the device is arranged or configurable. 前記第2の塗布手段は、前記被覆抑制剤の塗布が前記外側円環面(7a)の少なくとも周区分(7u)で、前記外側円環面(7a)の半径方向内側に位置する縁部(7r)の領域で行われるように配置されている又は配置可能である、請求項1から3までのいずれか1項記載の装置。   In the second application means, the coating agent is applied at least at the circumferential section (7u) of the outer annular surface (7a), and at the edge (in the radial direction of the outer annular surface (7a) ( The device according to any one of claims 1 to 3, wherein the device is arranged or can be arranged to take place in the region 7r). 前記第1の塗布手段(5)及び/又は第2の塗布手段(4)の塗布量及び/又は塗布圧及び/又は塗布速度及び/又は塗布角度及び/又は塗布時点を制御する制御手段が設けられている、請求項1から4までのいずれか1項記載の装置。   Control means for controlling the coating amount and / or coating pressure and / or coating speed and / or coating angle and / or coating time point of the first coating means (5) and / or the second coating means (4) is provided. The device according to any one of claims 1 to 4, wherein: 前記被覆材料(9)を硬化させる硬化手段が設けられている、請求項1から5までのいずれか1項記載の装置。   6. A device according to any one of the preceding claims, wherein a curing means for curing the coating material (9) is provided. 前記第2の塗布手段(4)は、出口端部(4e)を前記外側円環面(7a)に向けて配置可能な少なくとも1つの管路(4l)を有している、請求項1から6までのいずれか1項記載の装置。   The second application means (4) comprises at least one conduit (41) that can be arranged with the outlet end (4e) facing the outer annular surface (7a). The apparatus according to any one of 6 to 6. 前記第2の塗布手段(4)は、特に各出口端部(4e)に、特に制御可能なノズル(4d)を有している、請求項1から7までのいずれか1項記載の装置。   8. The device according to claim 1, wherein the second application means (4) has a particularly controllable nozzle (4d), in particular at each outlet end (4e). 支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する方法であって、
第1の塗布手段(5)によって前記内側円形面(7i)に前記被覆材料(9)を塗布し、回転手段(2,6)による回転軸線(R)を中心とした支持ウェハ(3)の回転により前記被覆材料(9)を分散させる、ステップ、特に経過を有している、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する方法において、
前記被覆材料(9)の分散中に、第2の塗布手段(4)によって、前記内側円形面(7i)を取り囲む外側円環面(7a)に、該外側円環面(7a)の被覆を少なくとも抑制する被覆抑制剤を供給することを特徴とする、支持ウェハ(3)の被覆面(3b)の内側円形面(7i)を被覆材料(9)で被覆する方法。
A method of coating an inner circular surface (7i) of a coated surface (3b) of a support wafer (3) with a coating material (9),
The coating material (9) is applied to the inner circular surface (7i) by the first application means (5), and the support wafer (3) centered on the rotation axis (R) by the rotation means (2, 6). Method of coating the inner circular surface (7i) of the coating surface (3b) of the support wafer (3) with the coating material (9), which has the step of dispersing the coating material (9) by rotation, in particular a course. In
During the dispersion of the coating material (9), the outer ring surface (7a) is coated on the outer ring surface (7a) surrounding the inner circular surface (7i) by the second application means (4). A method of coating the inner circular surface (7i) of the coating surface (3b) of the support wafer (3) with a coating material (9), characterized in that at least a coating inhibitor to suppress is supplied.
前記被覆材料(9)の塗布を、回転軸線(R)の領域で、特に前記支持ウェハ(3)に対して同心的に行う、請求項9記載の方法。   10. The method as claimed in claim 9, wherein the coating material (9) is applied concentrically in the region of the axis of rotation (R), in particular to the support wafer (3). 前記溶剤の塗布を、外側円環面(7a)の少なくとも周区分(7u)で、外側円環面(7a)の半径方向内側に位置する縁部(7r)の領域において、特に、前記被覆材料(9)の塗布と時間的にずらして行う、請求項9又は10記載の方法。   In particular, the coating material is applied in the region of the edge portion (7r) located radially inward of the outer annular surface (7a) in at least the circumferential section (7u) of the outer annular surface (7a). The method according to claim 9 or 10, wherein the method is carried out with a time shift from the application of (9).
JP2014531110A 2011-09-20 2011-09-20 Apparatus and method for coating a support wafer Active JP5933724B2 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2011/066345 WO2013041129A1 (en) 2011-09-20 2011-09-20 Device and method for coating a carrier wafer

Publications (2)

Publication Number Publication Date
JP2014529193A true JP2014529193A (en) 2014-10-30
JP5933724B2 JP5933724B2 (en) 2016-06-15

Family

ID=44674792

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014531110A Active JP5933724B2 (en) 2011-09-20 2011-09-20 Apparatus and method for coating a support wafer

Country Status (6)

Country Link
US (1) US10497601B2 (en)
EP (1) EP2745314B1 (en)
JP (1) JP5933724B2 (en)
SG (1) SG2014009955A (en)
TW (1) TWI544970B (en)
WO (1) WO2013041129A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113171936B (en) * 2021-04-16 2023-07-04 华虹半导体(无锡)有限公司 Glue spreading method in photoetching process

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033589A (en) * 1997-09-30 2000-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for depositing a coating layer on a wafer without edge bead formation
JP2008288488A (en) * 2007-05-21 2008-11-27 Sokudo:Kk Substrate treatment unit and substrate treatment method
JP2011510518A (en) * 2008-01-24 2011-03-31 ブルーワー サイエンス アイ エヌ シー. Method of mounting device wafer reversely on carrier substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6240458A (en) 1985-08-19 1987-02-21 Fujitsu Ltd Exposing method for thin film pattern
US5705223A (en) * 1994-07-26 1998-01-06 International Business Machine Corp. Method and apparatus for coating a semiconductor wafer
US5952050A (en) * 1996-02-27 1999-09-14 Micron Technology, Inc. Chemical dispensing system for semiconductor wafer processing
US6319317B1 (en) * 1999-04-19 2001-11-20 Tokyo Electron Limited Coating film forming method and coating apparatus
JP4757126B2 (en) * 2005-10-11 2011-08-24 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP2009088384A (en) 2007-10-02 2009-04-23 Sokudo:Kk Substrate treatment device
EP2199854B1 (en) * 2008-12-19 2015-12-16 Obducat AB Hybrid polymer mold for nano-imprinting and method for making the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6033589A (en) * 1997-09-30 2000-03-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method for depositing a coating layer on a wafer without edge bead formation
JP2008288488A (en) * 2007-05-21 2008-11-27 Sokudo:Kk Substrate treatment unit and substrate treatment method
JP2011510518A (en) * 2008-01-24 2011-03-31 ブルーワー サイエンス アイ エヌ シー. Method of mounting device wafer reversely on carrier substrate

Also Published As

Publication number Publication date
JP5933724B2 (en) 2016-06-15
TWI544970B (en) 2016-08-11
US10497601B2 (en) 2019-12-03
TW201318714A (en) 2013-05-16
US20140227440A1 (en) 2014-08-14
EP2745314B1 (en) 2017-03-15
SG2014009955A (en) 2014-08-28
WO2013041129A1 (en) 2013-03-28
EP2745314A1 (en) 2014-06-25

Similar Documents

Publication Publication Date Title
US7803720B2 (en) Coating process and equipment for reduced resist consumption
US10279368B2 (en) Coating method and coating apparatus
US20220288627A1 (en) Spin dispenser module substrate surface protection system
KR20200085720A (en) Application method
US20150151311A1 (en) Spin coating apparatus and spin coating method
JP2005046694A (en) Coated film forming method and coater
JP6448064B2 (en) Cover plate for defect control in spin coating
JP5560273B2 (en) Coating apparatus, coating method, and electronic device
US10262880B2 (en) Cover plate for wind mark control in spin coating process
KR101579509B1 (en) Substrate treating apparatus and method
JP5933724B2 (en) Apparatus and method for coating a support wafer
TW201926490A (en) Gluing device and method
JP6961397B2 (en) Substrate coating method and coating system
JP7092508B2 (en) Application method
JPH0899057A (en) Method and device for coating base plate with resist liquid
JP2020155757A (en) Substrate processing apparatus and substrate processing method
KR102203706B1 (en) Substrate treating apparatus and substrate treating method
TW201431614A (en) Coat formation method, coat formation device, and method for producing semiconductor chip
JP2003093955A (en) Method and device for coating thin film
JPH02149367A (en) Spin coating apparatus
JPH09319094A (en) Spin coating method and spin coating device
JPS62160171A (en) Method for coating resin
TW202247910A (en) Coating method and coating device
CN206022342U (en) A kind of rotary substrate process and treat system
CN117423608A (en) Method for controlling pollution of wafer back polymer material in process of coating wafer with polymer material

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20150423

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150519

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150813

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20160404

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20160502

R150 Certificate of patent or registration of utility model

Ref document number: 5933724

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250